WO1997012392A1 - Procede de nettoyage et de sechage des semiconducteurs et equipement approprie - Google Patents

Procede de nettoyage et de sechage des semiconducteurs et equipement approprie Download PDF

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Publication number
WO1997012392A1
WO1997012392A1 PCT/JP1996/000164 JP9600164W WO9712392A1 WO 1997012392 A1 WO1997012392 A1 WO 1997012392A1 JP 9600164 W JP9600164 W JP 9600164W WO 9712392 A1 WO9712392 A1 WO 9712392A1
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WO
WIPO (PCT)
Prior art keywords
organic solvent
water
layer
inert gas
supply
Prior art date
Application number
PCT/JP1996/000164
Other languages
English (en)
Japanese (ja)
Inventor
Kanichi Kadotani
Makio Tsubota
Original Assignee
Komatsu Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Ltd. filed Critical Komatsu Ltd.
Publication of WO1997012392A1 publication Critical patent/WO1997012392A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
    • F26B21/14—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects using gases or vapours other than air or steam, e.g. inert gases
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00—Drying solid materials or objects by processes not involving the application of heat
    • F26B5/005—Drying solid materials or objects by processes not involving the application of heat by dipping them into or mixing them with a chemical liquid, e.g. organic; chemical, e.g. organic, dewatering aids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

Definitions

  • the present invention relates to a semiconductor cleaning and drying method and a semiconductor cleaning and drying apparatus, and more particularly to a technique for cleaning and drying a semiconductor device such as a semiconductor wafer and a semiconductor device.
  • resist patterns are formed by photolithography, and selective processing such as etching using the same is often used.
  • a resist pattern by photolithography is performed in three steps: resist coating, selective exposure using an exposure mask, and development.
  • Unexposed areas depend on the current image. It is necessary to perform cleaning and drying after removing the resist.
  • an automatic developing device for spraying a developer of a desired concentration for a desired time is used, and a clean semiconductor wafer is obtained through washing and drying.
  • an isopropyl alcohol (I ⁇ ⁇ ) solution is sprayed on the semiconductor layer 1 as shown in FIG. And then drying.
  • I ⁇ ⁇ isopropyl alcohol
  • a method of spraying 2 g of IPA vapor as shown in Fig. 6 has also been proposed. Since IPA is flammable, there is a problem that equipment for explosion-proof or safety measures is required.
  • an aqueous layer 3 is disposed in the lower layer and an organic dry liquid layer 4 is disposed in the upper layer, and the semiconductor layer immersed in the lower aqueous layer is placed in the rinse layer.
  • a method has also been proposed in which the material is pulled up through an organic dry liquid layer, and drying is performed during this pulling process.
  • decane, 2-nonanone (butylmethylketone), etc. are used as the organic dry liquid layer, all of which are insoluble in water and have a specific gravity of less than 1, so that they are separated into upper layers.
  • An organic dry liquid layer is formed on the substrate. However, both have high boiling points, are difficult to evaporate, and are insoluble in water.
  • IPA is an organic material that has a low boiling point and is easy to dry. However, it is difficult to handle as steam because it is flammable and explosive.
  • the present invention has been made in view of the above circumstances, and an object of the present invention is to provide a semiconductor cleaning / drying apparatus which is safe in handling and can achieve good cleaning and drying in a short time. Disclosure of the invention
  • a semiconductor substrate is placed in a treatment tank, and the washing water is supplied into the treatment tank to a level where a water surface sufficiently covers the semiconductor substrate to form a washing water layer.
  • An inert gas supply step of supplying an inert gas to an upper portion of the processing tank so that an atmosphere above the water surface of the processing tank becomes an inert atmosphere;
  • An organic solvent supply step of instantaneously supplying a water-soluble organic solvent at a desired speed along the water surface so as to form a three-layer coexistence state of the layer and the inert gas layer;
  • a pulling step of pulling up the semiconductor substrate from the cleaning water layer to the inert gas layer at a certain moment, and a drying step of drying in the inert gas layer.
  • the organic solvent is isopropyl alcohol (IPA).
  • the organic solvent supply step comprises: moving the organic solvent supply port in a desired direction along the washing water table 20 at a predetermined distance upward from the surface of the washing water; On the surface of the washing water.
  • the _________________________________________________________________________________ either a moving the organic solvent supply nozzle in the desired direction along the washing water surface in the state which was above the washing water surface at a predetermined interval,
  • the method is characterized in that the organic solvent is supplied from the solvent supply nozzle in a direction different from the above direction, and the organic solvent is supplied to the surface of the cleaning water.
  • the organic solvent supply step comprises: moving the organic solvent supply nozzle in a desired direction along the surface of the washing water at a predetermined interval above the surface of the washing water; ⁇
  • the process is characterized in that the organic solvent is supplied from the supply nozzle in the same direction as the above direction, and is supplied to the washing water table 20 (ft supply).
  • the organic solvent supplying step comprises moving the organic solvent supply port in a desired direction along the surface of the cleaning water while gradually increasing the distance upward from the surface of the cleaning water, and supplying the organic solvent.
  • the process is a step of supplying to the surface of washing water.
  • a processing tank for transferring a semiconductor substrate in the processing tank, a cleaning water supply unit configured to supply cleaning water into the processing tank to form a cleaning water layer
  • An inert gas supply unit for supplying an inert gas to an upper portion of the processing tank; and a cleaning water layer instantaneously along a surface of the cleaning water supplied to a height sufficient to cover the semiconductor substrate in the processing tank.
  • An organic solvent supply means for instantaneously supplying a water-soluble organic solvent at a desired speed along the water surface so as to form a three-layer coexistence state of an organic solvent layer and an inert gas layer.
  • the organic solvent supply means includes: an organic solvent supply nozzle having a supply port for supplying the organic solvent in a desired direction; and a moving mechanism for moving the organic solvent supply nozzle.
  • An organic solvent layer is formed on the surface of the washing water layer through a nozzle, and the organic solvent layer is supplied while moving to the surface of the washing water layer.
  • the organic solvent supply means is formed such that the organic solvent supply port of the organic solvent supply nozzle faces the surface of the washing water layer.
  • the organic solvent supply means includes an organic solvent storage unit integrated with an organic solvent supply nozzle.
  • the apparatus further comprises cleaning water discharge means attached to the bottom of the processing tank, and after forming the three-layer coexistence state, drives the cleaning water discharge means to cover the semiconductor substrate with an inert gas layer.
  • the water level of the washing tank is gently lowered together with the organic solvent layer until the washing is completed.
  • the third feature of the present invention is that a part of the side wall is located inside! :
  • a treatment tank configured to form a double structure consisting of a first wall and a second wall located outside; a treatment tank provided with a washing water supply pipe on the bottom surface; First and second openings respectively disposed on the wall and the second wall; and an organic solvent it ⁇ -disposed so as to penetrate the ⁇ 1 interface and engage with the second opening.
  • a discharge pipe connected between the first and second openings, and disposed above the first and second openings to supply an inert gas into the processing tank.
  • An inert gas supply unit for supplying the semiconductor substrate into the processing bath, and a supply of cleaning water in a state where the organic solvent supply pipe is attached to the second opening.
  • the organic solvent supply pipe is moved to the position of the first opening while overflowing from the discharge pipe and maintaining the water surface at the position of the first wall, and supplying the organic solvent to the second opening.
  • a pipe is connected, and the organic solvent is supplied from the pipe lined with the organic solvent along the surface of the washing water.
  • the washing water layer, the organic solvent layer, and the inert gas layer are instantaneously formed. That is, a three-layer coexistence state is formed.
  • a fourth feature of the present invention is that a part of the side wall is configured to have a double structure including a first wall located inside and a second wall located outside, and a cleaning water supply
  • a processing tank provided with a pipe, and a first opening and a second wall provided on the first and second walls of the processing tank, respectively.
  • First and second openings formed to be lower than the lower wall of the drain, a discharge pipe connected between the first and second openings, and disposed above the first and second openings
  • An inert gas supply unit for supplying an inert gas into the processing tank, a transporting means for transporting the semi-finished substrate into the processing tank, and supplying the organic solvent in a desired direction.
  • An organic solvent supply nozzle having a supply nozzle that can be adjusted to a desired height from the position of the lower surface of the first wall, and the organic solvent supply nozzle And a moving mechanism for moving the door, previously for washing purification plant layer.
  • An organic solvent supply means configured to form an organic solvent layer on the surface of the washing water layer while moving the organic solvent supply nozzle, and the first and second openings for closing the first or second opening.
  • T / J changing means that can be attached to the first or second opening.
  • the washing water is supplied in a state where the switching means is attached to the second opening, and While the water level is maintained at the lower surface position S of the second wall, the switching means is attached to the first opening, and the organic solvent ffi lined nozzle is removed from the water surface. While setting the desired height, the organic solvent is supplied from the preceding organic solvent supply nozzle along the surface of the cleaning water while moving the organic solvent supply nozzle, and a layer of the cleaning water is instantaneously formed, A three-layer coexistence state of the solvent layer and the inert gas layer
  • the organic solvent supply nozzle is configured so that the height from the water surface and the moving direction with respect to the water surface can be adjusted. Also preferably, the organic solvent supply nozzle is provided so as to penetrate the switching means.
  • the organic solvent supplying means includes a liquid storage in the treatment tank.
  • a three-layer coexistence state of a cleaning water layer, an organic solvent and an inert gas is instantaneously formed in the treatment tank, and the semiconductor substrate is drawn from the cleaning water layer toward the inert gas.
  • water and an organic solvent are instantaneously replaced on the surface of the semiconductor substrate, so that the surface is quickly dried in an inert gas layer. Since a water-soluble organic solvent is used, replacement with washing water is easy. However, on the other hand, there is a problem that it is mixed with washing water. Therefore, in the present invention, as shown in FIG.
  • a water-soluble organic solvent 0 is caused to flow at high speed along the surface of the washing water W, and an organic solvent layer is instantaneously formed on the washing water layer.
  • the purpose is achieved by vertically lifting the semiconductor substrate 1 and guiding it to the inert gas layer G in the upper layer. At this time, water is efficiently removed from the surface of the semiconductor substrate by the Marangoni effect, as shown in FIG.
  • the organic solvent dissolved in the washing water at the boundary I between the semiconductor substrate surface and the washing water surface is small because the amount of the washing water is small.
  • the solvent concentration is high and the surface tension is low.
  • the concentration of organic solvent dissolved in the cleaning water is low due to the large amount of cleaning water, and the surface is close to (high) water. It will have tension. For this reason, the dissolved concentration of the organic solvent, that is, the surface tension, is generated between the portion I and the portion II, and from the portion I located on the side of the semiconductor substrate having the small surface tension, the surface tension of the II is increased.
  • the flow due to the difference in surface tension that is, Marango double flow, occurs in the part, and water flows and is efficiently removed from the temporary surface.
  • the flash point of I ⁇ 1 is 10 to 2 CTC.
  • the gas phase is air, oxygen and IPA will be mixed. In this case, only a few percent of IPA will be present in the air, causing an explosion due to static electricity etc.
  • the gas phase is made into an inert gas as in the wood invention, there is no danger of explosion even at high temperatures, and high-speed drying becomes "nj capability.
  • nitrogen gas as an inert gas 80 ⁇ : L It is desirable to set to about 50 ° C.
  • the semiconductor substrate refers to both a semiconductor device and a semiconductor device during or after an element forming step.
  • the semiconductor device during or after the element forming process has grooves or irregularities on the surface, and water easily stays in the concave portion.
  • the semiconductor device is very efficiently replaced by the Marangoni effect. A dry state can be obtained.
  • the nozzle is moved in order to decrease the relative speed between the water surface and the solvent by moving the nozzle to the water surface while moving the nozzle. Since the method of moving the nozzle and the supply direction of the melt are opposite, the speed at which the respective speeds are canceled with each other and reaches the water surface can be reduced to zero. Therefore, it is possible to form a three-layer coexistence state without roughening the water surface and without diffusing the solvent.
  • the thickness of the solvent layer can be adjusted. For example, if the lowermost part of the supply nozzle is supplied so as to be in contact with the uppermost surface of the molten layer, it is possible to form a very thin molten layer. Further, by moving the nozzle upward, the thickness of the solvent layer can be kept large. It is desirable that the thickness of the solvent layer be about 0.11 cm.
  • the moving speed of the nozzle is preferably 1 mn / scc 5 cm / sec.
  • the solvent reaches the washing surface along this slope and is gently supplied without being diffused into the washing water.
  • methyl alcohol (CH 3 OH), ethyl alcohol (C 2 ⁇ ⁇ ) OH), acetate (CH 3 COCHg), Freon R—113 (CC 1 2 FCC 1 F. may be used.
  • FIG. 1 is a diagram showing a washing and drying apparatus according to an embodiment of the present invention.
  • Fig. 2 is an enlarged sectional view of the main part of the device.
  • FIG. 3 is a conceptual explanatory view of the cleaning device of the present invention.
  • Figure 4 is a diagram for explaining the Marangoni effect
  • Figure 5 shows the conventional washing and drying method.
  • Figure 6 shows the conventional washing and drying method.
  • Figure 7 shows the conventional washing and drying method.
  • Figure 8 shows the conventional washing and drying method.
  • FIG. 9 is a diagram showing a conventional washing and drying method.
  • Figure 10 shows the conventional washing and drying method.
  • FIG. 11 is an enlarged sectional view of a main part of a cleaning / drying apparatus according to a second embodiment of the present invention.
  • Fig. 12 is an illustration of the main parts
  • Fig. 13 is a sectional view taken along the line B-B in Fig. 12.
  • Figure 14 shows a modification of the organic solvent supply port of the device
  • Fig. 15 shows a modification of the organic solvent supply port of the device.
  • Fig. 16 shows a modified example of the organic solvent supply port of the device.
  • Fig. 17 shows the relationship between the moving direction of the machine melt supply nozzle and the direction of organic solvent supply in S
  • Fig. 18 shows the relationship between the moving direction of the melt supply nozzle and the organic solvent supply direction.
  • Figure 19 shows the relationship between the moving direction of the organic solvent supply nozzle and the organic solvent supply direction.
  • FIG. 20 is a diagram showing a modification of the moving direction of the organic solvent supply nozzle of the device.
  • FIG. 21 is a diagram showing an organic solvent supply nozzle moving means of the device.
  • Fig. 22 is a diagram showing the stage of moving the organic solvent supply nozzle of the apparatus.
  • Fig. 23 shows an example of supplying organic solvent to the organic solvent supply nozzle of the same device.
  • Fig. 24 shows an example of supplying organic solvent to the organic solvent supply nozzle of S.
  • Transport section 20 for transporting semiconductor wafers to and from the tank; pure water supply and discharge section 30 for supplying and discharging pure water as cleaning water to and from processing tank 1; and IPA to supply and discharge IPA as an organic solvent to and from processing tank 11
  • It consists of a supply / discharge unit 40 and a nitrogen gas supply / discharge unit 5 ° that supplies and discharges nitrogen gas as an inert gas into the treatment tank.
  • a nitrogen gas supply / discharge unit 5 that supplies and discharges nitrogen gas as an inert gas into the treatment tank.
  • the semiconductor pump is pulled up in a direction perpendicular to these layers, guided to the nitrogen gas layer and dried.
  • the cleaning / drying section 10 is composed of a processing shackle 11 in which a part of the side wall forms a double-structured section.
  • An inner cylinder 13 which is connected to the supply pipe 34 and is made of quartz glass and has a first opening 12, and a second cylinder formed outside thereof and located at a position corresponding to the first opening 12.
  • An outer cylinder 15 having an opening 14 and an ultrasonic oscillator 16 attached to the outside of the processing tank 11 and generating ultrasonic vibration in the processing tank 11 are provided.
  • the transport section 20 flies a cassette handler 21 that can be moved in the horizontal and vertical directions so that the cassette 22 can be mounted in the cassette handler 21.
  • 2 are arranged at predetermined intervals in the cassette 2, and when the cassette 2 2 is mounted in the cassette handler 21 from an exposure apparatus or the like, the cassette handler 21 is processed by the cassette handler 21. It moves horizontally upwards, is mounted on the processing unit 11, and the cassette 2 2 descends to the I-J of the control unit 11, and the force set 2 2 is synchronized with the ift supply of the IPA. It is designed so that pulling is carried out.
  • the pure water ift supply / discharge unit 30 is connected to the pure water heater 3 3 equipped with a pure water outlet 3 1, a heating ffl pi-gen lamp 3 2, and the pure water heater 3. It is provided with a pure water pipe 34 for supplying pure water from the bottom of the treated shrink 11, and a discharge port 35.
  • a pure water heater may not be required.
  • the IPA supply discharge section 40 includes an IPA supply pipe 41 configured to be able to engage with the first and second openings 12 and 14 of the treatment tank 11, A stainless steel bellows 42 whose length in the direction can be adjusted, and an engagement connection portion 43 formed so as to be in close contact with the first or second opening 12, 14.
  • the engagement connection portion 43 disengages from the first opening 12 and moves to the second opening 14, whereupon the second connection 14 and Are engaged.
  • the pure water and IPA in the processing tank 11 are located between the inner cylinder 13 and the outer cylinder 15 of the processing tank 11 Drained to drain 17.
  • the engagement connection portion 43 at the tip of the IPA supply pipe 41 is engaged with the second opening 14.
  • the cassette 22 on which the semiconductor wafer 1 has been set is mounted on the cassette handler 21 of the transfer section 20, and the cassette handler 21 is horizontally moved to above the processing tank 11 to perform processing.
  • ⁇ 1 1 1 Upper part of ⁇ 3 ⁇ 4?
  • the cassette handler 21 is operated and lowered until the cassette 22 reaches the bottom of the process i3 ⁇ 4U 11 1.
  • nitrogen gas is supplied from a gas supply pipe 54 to fill the upper part of the processing tank 11 with nitrogen gas, and a treatment is performed from a pure water supply pipe 34 connected to the bottom of the processing tank 1.
  • the pure water supplied by (ft) is supplied to the pure water inlet 31 and the pure water heater 33 is heated to a predetermined temperature by the halogen lamp 32 in the pure water heater 33, and the processing tank 11
  • pure water is supplied so that the cassette 22 is completely below the surface of the water in the treatment tank 1 ⁇ , and overflows from the opening 1 2 through the drain 17.
  • the ultrasonic oscillator 16 is driven and an ultrasonic battle is conducted with pure water.
  • the bellows 42 is moved to connect the engagement connection portion 43 so as to be in close contact with the first opening 12, and the IPA (liquid) is supplied from the IPA supply pipe 41.
  • the water is fed horizontally along the water surface at a constant flow rate for a certain period of time.
  • a three-layer structure state of a layer of pure water, a layer 1 of pure water and a layer G of nitrogen gas is instantaneously formed.
  • the cassette handler Upon receiving an IPA supply end signal from the IPA supply pipe 41, the cassette handler is driven, and the cassette 22 is raised to the nitrogen gas! IG at a desired speed.
  • the flow rate of the nitrogen gas is increased as necessary, and the semiconductor wafer is dried in a nitrogen gas layer for a predetermined time.
  • the concentration of IPA dissolved in the pure water is high due to the small amount of pure water at the boundary between the semiconductor surface and the pure water surface.
  • the tension is small, the surface of the pure water layer in a region slightly distant from the surface of the semiconductor pen has a surface tension close to that of water, causing a difference in surface tension. From the part located on the side, a flow due to a difference in surface tension, that is, a Marango double flow is generated, and water flows and is efficiently removed from the semiconductor menu surface.
  • the cassette is disposed in the process 1 and then the cassette is disposed in a state in which the cleaning water is supplied in a state where the cleaning water is supplied. Needless to say, this may be done.
  • the nitrogen gas introduction may be performed before the washing water is shared, the washing water may be introduced after the washing water, or the IPA supply S It may be later.
  • the cassette handler may be set so that one cassette is in the drying process and the other is in the washing process, continuous operation can be performed. It becomes possible.
  • the apparatus can be integrated with a developing apparatus after exposure or with an etching apparatus. That is, by attaching a developing solution supply unit or the like having the same function as the pure water supply unit to the processing tank 11, the developing solution is supplied, and the cassette in which the semiconductor wafer after exposure is set is kept for a predetermined time. After rinsing in the developer and discharging the developer, pure water may be supplied from a pure water supply unit, and washing and drying may be performed in the same manner as in the above embodiment.
  • the etching liquid supply section and the resist stripping liquid supply section are similarly set in the processing tank 11 described above, the semiconductor wafer after exposure is set, and only the supply and discharge of the liquid are performed. The cleaning, etching, cleaning, resist stripping, cleaning, and drying are performed consistently, and a dry and clean semiconductor chip having a desired pattern can be obtained.
  • nitrogen gas is used as the inert gas.
  • the present invention is not limited to nitrogen, and another inert gas such as argon gas may be used.
  • the conductor layer was lifted from the hot pure water layer toward the IPA layer and the inert gas II.
  • a water outlet was provided at the bottom of the treatment tank 11 and the solenoid valve 100 was opened.
  • the semiconductor ⁇ is kept static and the pure water is drained, the I ⁇ ⁇ ® on the 3 ⁇ 4 ⁇ surface will decrease, and finally the semiconductor wafer will become improper. Exposure to the active gas IS 'produces the same effect as lifting the half wafer.
  • FIG. 11 is a partially enlarged cross-sectional view of the semiconductor washing machine of the embodiment.
  • FIG. 12 is an enlarged explanatory view of an IPA ift supply means used in the apparatus.
  • the IPA supply means is provided with an IPA supply nozzle 141 that supplies the IPA layer while moving with respect to the washing water layer. Things.
  • This device is different from the first embodiment in that the engagement connection portion 43 engaging with the first and second openings and the IPA supply pipe 41 (see FIG. 2) are integrally formed.
  • the second embodiment is characterized in that it is separated into an engagement connection portion 43 and an IPA supply means. The configuration of the other portions is formed in the same manner as in the first embodiment.
  • the washing / drying unit 10 provided with the processing tank 11 ⁇ , so as to supply IPA in a desired direction, the lower surface of the first opening 12 provided in the inner cylinder 13 (the first wall).
  • the IPA supply nozzle 141 which has a supply port 144 that can be adjusted to a desired height from the position of the lower surface of the IPA supply nozzle, is provided by a moving means (not shown).
  • the organic solvent layer 0 is formed on the surface of the washing water layer W via the IPA supply nozzle while moving the 141 with respect to the surface of the washing water layer.
  • the bellows 42 and the IPA supply pipe 41 are attached to the first and second openings at the bellows 42 and the engagement connection part 43 in the first embodiment.
  • the engagement connection portion 43 provided as a means, and with this engagement connection portion 43 attached to the second opening 14, the washing water is supplied, and the overflow from the drain 17 is performed.
  • the cradle connecting portion 43 is attached to the opening 12 of the ⁇ 1, and the IPA ift supply nozzle is Set the desired height from the water surface, and move the IPA supply nozzle forward while moving along the washing water table ffij; EIPA iJi; IPA ift-supply of supply nozzle ⁇ ⁇ (circle) I? And instantaneously form a 3 ⁇ coexistence state with JS'W of washing water, IPA I1 I, and inert gas J1G.
  • the steps up to the formation of the washing water lg are performed by supplying pure water to the treatment tank 11 in the same procedure as described in the first embodiment, and cleaning is performed.
  • the bellows 42 is moved to connect the engagement connection portion 43 to the first opening 12 so as to be in close contact therewith.
  • the nitrogen gas was heated to 80 to 150 and supplied.
  • the flow rate of the nitrogen gas is increased as necessary, and the semiconductor wafer is dried while being held in the nitrogen gas layer for a predetermined time.
  • the concentration of IPA dissolved in pure water is high at the boundary between the semiconductor surface and the pure water surface due to the small amount of pure water.
  • the surface tension is small, the surface of the pure water layer in a region slightly away from the surface of the semiconductor pen has a surface tension close to that of water, causing a difference in surface tension, and a semiconductor having a small surface tension.
  • a flow due to a difference in surface tension that is, a Marango double flow is generated from the portion located on the surface of the semiconductor menu, and water flows efficiently from the semiconductor menu surface and is removed.
  • the bellows 42 is moved to connect the tie connection portion 43 to the second opening 4 so that the pure water supply pipe is connected.
  • the pure water ift supply is performed from 34 to overflow, and the pure water is discharged together with the IPA from the drain 17 again.
  • the IPA supply port is formed with a plurality of round holes.
  • the shape is not limited to this, and as shown in FIGS. Deformable.
  • FIG. 4 is a view using slit-shaped IPA supply port 1 43.
  • the IPA can be more easily guided to the water surface. is there.
  • the IPA supply port 144 may be turned downward. According to such a configuration, the IPA supply port can be brought close to the water surface. If the lowermost part of the supply port is brought into contact with the uppermost surface of the IPA layer, an extremely thin solvent layer can be formed. In this structure, the thickness of the IPA layer (solvent layer) is easily controlled.
  • the moving direction of the nozzle and the supply direction may be reversed.
  • This nozzle structure is effective when it is desired to increase the supply amount of IPA.
  • the jet flow will be like a jet flow and the water surface will be roughened.
  • the direction of movement of the nozzle is reversed, only the movement speed of the nozzle with respect to the water surface will be The speed of this jet flow is small, and the speed of IPA reaching the water surface can be reduced.
  • the moving direction of the IPA supply nozzle 1441 may be the same as the IPA supply direction. In this case, there is a guide effect since the IPA runs below the supply port, and the IPA is supplied to the surface of the water quietly.
  • the IPA supply nozzle may be gradually moved upward. Even when the IPA is supplied to the surface of the water, the IPA may not immediately spread to the entire surface of the water, but may penetrate under the nozzle.If the nozzle is moved in parallel with the surface of the water, the nozzle may return to the right angle. There is a force; ', and if you move it upwards, such a dead end disappears.
  • nozzle moving means will be described as a modification of the present invention.
  • the IPA supply nozzle 1441 may be moved in parallel to the water surface using the bellows 144.
  • the tip of the nozzle may be moved by a transfer member 147 traveling on the rail 146.
  • the supply of the IPA to the IPA supply nozzle 141 may be performed via a flexible tube 148 as shown in FIG.
  • the supply of IPA to the IPA Where the reservoir is at the top of the processing tank 1 1
  • the force which is located in the gas phase of the process may be provided outside the processing tank.
  • the IPA supply nozzle 14 1 is provided separately from the engagement connection portion 43, but the flexible tube 14 9 shown in FIG.
  • the IPA supply nozzle 141 may be extended through the connection portion 43 from the side of the engagement connection portion.
  • pure water may be discharged from the bottom of the processing tank 11 to move the pure water layer and the IPA layer.
  • the cleaning / drying apparatus of the present invention high cleanliness can be achieved with a small and extremely simple configuration, and the apparatus is dried as it is in this inert gas layer, and the throughput is extremely low. high.

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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

L'invention concerne un procédé de nettoyage et de séchage pour semiconducteur, associé à un équipement manipulable sans danger qui raccourçi le temps de nettoyage et de séchage en donnant d'excellents résultats. Le procédé comprend les étapes suivantes: plonger un substrat en semiconducteur (1) dans un bain de traitement et alimenter ce bain (11) en eau de lavage jusqu'à immerger entièremnent ledit substrat; injecter un gaz inerte dans la zone supérieure située au-dessus de la surface de l'eau de lavage afin de rendre l'atmosphère de cette zone inerte; injecter instantanément un solvant organique hydrosoluble dans le bain selon un débit déterminé, le long de la surface de l'eau de lavage, de manière à former immédiatement un état coexistant d'une phase W d'eau de lavage, d'une phase O de solvant organique et d'une phase G de gaz inerte; faire remonter le substrat en semiconducteur depuis la phase d'eau de lavage vers la phase de gaz inerte lorsque l'état coexistant des trois phases sus-mentionnées est constitué; et sécher ledit substrat en semiconducteur dans la phase de gaz inerte.
PCT/JP1996/000164 1995-09-27 1996-01-29 Procede de nettoyage et de sechage des semiconducteurs et equipement approprie WO1997012392A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7/249698 1995-09-27
JP24969895 1995-09-27

Publications (1)

Publication Number Publication Date
WO1997012392A1 true WO1997012392A1 (fr) 1997-04-03

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Application Number Title Priority Date Filing Date
PCT/JP1996/000164 WO1997012392A1 (fr) 1995-09-27 1996-01-29 Procede de nettoyage et de sechage des semiconducteurs et equipement approprie

Country Status (2)

Country Link
TW (1) TW301013B (fr)
WO (1) WO1997012392A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2328080A (en) * 1997-08-08 1999-02-10 Nec Corp Method for rinsing and drying a wafer
US5954888A (en) * 1998-02-09 1999-09-21 Speedfam Corporation Post-CMP wet-HF cleaning station
CN102446702A (zh) * 2010-10-15 2012-05-09 中芯国际集成电路制造(上海)有限公司 湿法处理方法及回蚀方法
JPWO2021205909A1 (fr) * 2020-04-07 2021-10-14

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03104225A (ja) * 1989-09-19 1991-05-01 Taiyo Sanso Co Ltd 固体表面の洗浄・乾燥方法
JPH03218014A (ja) * 1990-01-23 1991-09-25 Matsushita Electron Corp 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03104225A (ja) * 1989-09-19 1991-05-01 Taiyo Sanso Co Ltd 固体表面の洗浄・乾燥方法
JPH03218014A (ja) * 1990-01-23 1991-09-25 Matsushita Electron Corp 半導体装置の製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2328080A (en) * 1997-08-08 1999-02-10 Nec Corp Method for rinsing and drying a wafer
US5938857A (en) * 1997-08-08 1999-08-17 Nec Corporation Method for rinsing and drying a substrate
GB2328080B (en) * 1997-08-08 2002-09-04 Nec Corp Improved method for rinsing and drying a wafer
US5954888A (en) * 1998-02-09 1999-09-21 Speedfam Corporation Post-CMP wet-HF cleaning station
US6125861A (en) * 1998-02-09 2000-10-03 Speedfam-Ipec Corporation Post-CMP wet-HF cleaning station
CN102446702A (zh) * 2010-10-15 2012-05-09 中芯国际集成电路制造(上海)有限公司 湿法处理方法及回蚀方法
JPWO2021205909A1 (fr) * 2020-04-07 2021-10-14
WO2021205909A1 (fr) * 2020-04-07 2021-10-14 東京エレクトロン株式会社 Procédé de traitement de substrat et dispositif de traitement de substrat

Also Published As

Publication number Publication date
TW301013B (en) 1997-03-21

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