WO1996016444A1 - Integrated circuit device - Google Patents

Integrated circuit device Download PDF

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Publication number
WO1996016444A1
WO1996016444A1 PCT/JP1994/001963 JP9401963W WO9616444A1 WO 1996016444 A1 WO1996016444 A1 WO 1996016444A1 JP 9401963 W JP9401963 W JP 9401963W WO 9616444 A1 WO9616444 A1 WO 9616444A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal case
ceramic substrate
heat sink
integrated circuit
circuit device
Prior art date
Application number
PCT/JP1994/001963
Other languages
French (fr)
Japanese (ja)
Inventor
Hiroyasu Yamamoto
Toru Sato
Kazuyoshi Sasaki
Masahiro Ekawa
Tadanori Kusano
Original Assignee
Iwaki Electronics Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Iwaki Electronics Co., Ltd. filed Critical Iwaki Electronics Co., Ltd.
Priority to PCT/JP1994/001963 priority Critical patent/WO1996016444A1/en
Publication of WO1996016444A1 publication Critical patent/WO1996016444A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Definitions

  • the present invention relates to an integrated circuit device in which an element is mounted on a substrate and mounted on a heat sink. Background technology
  • the heat radiating plate 21 is a heat radiating plate having good thermal conductivity, such as copper or aluminum die cast.
  • the ceramic substrate 22 is fixed on the heat sink 21 via solder, and the circuit conductor 23 is a conductive thick film printed on the ceramic substrate 22. is there.
  • the element (semiconductor chip) 24 is a chip such as a transistor which is electrically connected to the circuit conductor 23 by soldering or wire.
  • Heat spreader 25 is a material with excellent thermal conductivity, This is for increasing the contact area with the ceramic substrate 22 and bonding the element (semiconductor chip) 24 thereon to improve the thermal conductivity.
  • the upper lid 26 is a concave lid, which covers the whole and is connected to the heat radiating plate 21 to prevent noise from entering from outside.
  • the ceramic substrate 22 and the heat sink 21 are soldered, they are exposed to a high temperature of 230 to 260 and heated. However, due to the difference in thermal expansion coefficient between the ceramic substrate 22 and the heat sink 21, the entire ceramic substrate 22 may be warped or cracked, resulting in an increase in thermal resistance. There was a problem that performance and reliability were reduced.
  • solder dissolves the thick-film conductor on the back surface of the ceramic substrate 22 and the conductors (Au, Ag, etc.) in the through-holes, losing the electrical connection.
  • the conductors Au, Ag, etc.
  • the present invention has been made in view of the above circumstances, and in order to solve these problems, It is an object of the present invention to realize a highly reliable, inexpensive integrated circuit device that is extremely simple in structure, free from warpage of the entire substrate, cracking of the substrate, and melting by solder.
  • the present invention provides an integrated circuit device in which an element is mounted on a substrate and attached to a heat sink.
  • a metal case 9 provided with a contact plate 13 for covering the ceramic substrate 3 and pressing a circuit conductor 12 provided on the ceramic substrate 3;
  • a part of the metal case 9 is bent to press the ceramic substrate 3 and the heat sink 1 through the non-conductive resin 2 while pressing the contact plate 13 of the metal case 9 to the ceramic plate.
  • This is an integrated circuit device configured to contact the circuit boards 12 on the circuit board 3 so as to have the same potential.
  • a screw hole 10 is provided in the heat sink 1, and a convex portion of the metal case 9 is inserted into the screw hole 10 and pressed to connect the ceramic substrate 3 and the heat sink 1.
  • the metal plate 9 is brought into pressure contact with the non-conductive resin 2 and the contact plate 13 of the metal case 9 is brought into contact with the circuit conductor 12 on the ceramic substrate 3 so as to have the same potential.
  • the convex portion of the metal case 9 is formed into a cylindrical shape or another shape, and after inserting the convex portion, force is applied to the ceramic substrate 3 and the heat radiating plate 1.
  • a cutout portion 14 is provided at an edge facing the heat sink 1 without using the above-mentioned force screw hole, and the elastic locking portion 15 of the metal case 9 is provided in the cutout portion 14.
  • the ceramic board 3 and the radiator plate 1 are pressed into contact with each other via the non-conductive resin 2 while the contact plate 13 of the metal case 9 is placed on the ceramic board 3. It is also possible to bring them into the same potential by contacting the circuit conductors 12 with each other.
  • FIG. 1A is a sectional view of an integrated circuit device according to a first embodiment of the present invention.
  • FIG. 1B is a plan view of the integrated circuit device shown in FIG. 1A.
  • FIG. 2 is a flowchart showing an example of a process for producing the integrated circuit device shown in FIGS. 1A and 1B.
  • FIG. 3A is a sectional view of a principal part of the integrated circuit device shown in FIGS. 1A and 1B.
  • FIG. 3B is a perspective view of a contact plate in a main part of the integrated circuit device shown in FIG. 3A.
  • FIG. 4 is an exploded perspective view of an integrated circuit device according to a second embodiment of the present invention.
  • FIG. 5 shows an integrated circuit device according to the second embodiment of the present invention shown in FIG. FIG. 4 is a perspective view of the device after being assembled.
  • FIG. 6 is a cross-sectional view taken along line AA of FIG.
  • FIG. 7 is a cross-sectional view showing a conventional technique. BEST MODE FOR CARRYING OUT THE INVENTION
  • the heat radiating plate 1 has a heat radiating effect by contacting the ceramic substrate 3 via the non-conductive resin 2 and releasing heat to the outside.
  • the heat sink 1 is made by punching a plate-shaped material made of a copper material having a thickness of 1.0 to 3. Omm, and has a Ni plating on the surface to prevent oxidation of the copper material.
  • a circular through hole is formed at both ends for inserting screws for fixing the package to another heat dissipating member.
  • the resin 2 serves to conduct heat by bringing the ceramic substrate 3 into contact with the heat sink 1 and is, for example, a silicon resin for heat diffusion.
  • This resin 2 can be uniformly thinly applied on the heat sink 1 or printed.
  • a screen printer is used to uniformly apply a thickness of 20 m or less on the heat sink 1.
  • the circuit conductors 12 are drawn by, for example, a screen printing method using copper paste, and are insulated except for main parts. Protected by the rim.
  • a U-shaped notch 11 is formed at each end of the ceramic substrate 3, and a positioning protrusion 7 formed on the heat sink 1 is formed in the U-shaped notch 11 in the ceramic substrate 3. And the position of heat sink 1.
  • the U-shaped notch 11 can be formed by die molding or laser processing.
  • the circuit conductor 4 forms a thick metal film on the ceramic substrate 3 and connects the element 5 and the like.
  • Element 5 is an element such as a semiconductor chip, which generates heat when operating an NPN transistor, a PNP transistor, etc., and has a thickness of 0. Au-Si eutectic adheres to the heat spreader 6 of 2 to 0.5 mm.
  • the element 5 fixed on the heat spreader 6 is fixed to the circuit conductor 4 formed on the surface of the ceramic substrate 3 by Au_Sn eutectic. Then, the electrode pad formed on the surface of the element 5 and the circuit conductor 4 are wire-bonded with the gold wire 8 to be electrically connected.
  • the positioning protrusion 7 is a protrusion for positioning the ceramic substrate 3 on the heat sink 1.
  • the gold wire 8 is a connection wire for connecting the electrode pad of the element 5 and the circuit conductor 4.
  • the metal case 9 has a convex shape and is formed by press working using stainless steel having a high spring property and a thickness of about 0.2 to 0.3 mm.
  • the panel-like contact plate 13 provided inside the metal case 9 was soldered on the ceramic substrate 3. Push down so as to pierce the circuit conductors 12 and connect them to the same potential as the metal case 9 and the circuit conductors 4 of the ceramic substrate 3.
  • the screw hole 10 is a screw hole for fixing the heat sink 1 to another heat sink or the like.
  • a taper having an angle of 60 to 90 degrees is provided at the lower part of the screw hole, and the cylindrical portion 9a of the metal case 9 is inserted into this portion and fixed by caulking. Then, when the metal case 9 is caulked and fixed to another heat radiating plate or the like with screws, electrical connection can be automatically achieved through the path of the metal case, screws, and other metal cases.
  • the U-shaped notch 11 is obtained by cutting the metal case 9 into a U-shape, and the positioning projection 7 is located at this portion.
  • the circuit conductor 12 is a thick metal film provided on the ceramic substrate 3 for electrically connecting the element 5 and the like.
  • the contact plate 13 is provided on the metal case 9 and has a panel shape. When the cylindrical portion of the metal case 9 is inserted into the screw hole 10 of the heat sink 1 and caulked and fixed, the contact plate 13 is removed. The metal case 9 and the circuit conductor 12 are electrically connected to each other by digging into the solder on the soldered circuit conductor 12 of the circuit board 3. Normally, circuit conductors 12 are connected to ground.
  • step S1 a hybrid IC is manufactured.
  • a hybrid IC in which a semiconductor chip is mounted as a device 5 on the ceramic substrate 3 of FIG. 1A is formed.
  • step S2 the heat sink 1 is printed with silicone resin. This Is printed on a portion of the heat sink 1 on which the ceramic substrate 3 is to be mounted using a soft resin, for example, a silicon resin having a thickness of 20 m or less.
  • step S 3 the hybrid IC is temporarily attached on the heat sink 1. This is done by printing a silicone resin with a thickness of 20 m or less on the heat sink in S2, and attaching the ceramic substrate 3 (high- ) Insert the holes for positioning and temporarily attach them.
  • step S 4 the circuit board is pressed against the heat sink 1 by squeezing the metal case 9.
  • the metal case 9 is fixed to the heat sink 1 by canning with the cylinder of the metal case 9 inserted into the screw hole 10 of the heat sink in the state of step S4.
  • the ceramic substrate 3 is pressed into contact with the radiator plate 1 via the resin 2 by the metal case 9, and the thermal conductivity of the two is maintained in a good state.
  • the contact plate 13 of the metal case 9 cuts into the solder of the circuit conductor 4 of the ceramic substrate 3 and becomes the same potential.
  • the metal case 9, the contact plate 1, and the circuit board 4 are connected, and the metal case 9 is connected to, for example, the ground potential.
  • the ceramic substrate 3 is pressed into contact with the heat radiating plate 1 via the non-conductive thin resin 2 to improve the thermal conductivity between the circuit board and the heat radiating plate.
  • a non-conductive resin 2 is thinly printed on the heat sink 1 shown in FIGS. 1A and 1B, a ceramic substrate 3 is placed thereon, and a metal case 9 is further placed thereon.
  • the ceramic substrate 3 on which the hybrid IC is mounted is mounted in a simple process by placing the cylindrical portion 9a into the screw hole 10 of the heat sink 1 and fixing it with a force. While being pressed against the heat sink 1 with good conductivity, the metal case 9 It is possible to automatically connect to the ground potential of ceramic substrate 3 or to heat sink 1.
  • the contact plate 13 is a panel-like plate attached to the metal case 9, and a cylindrical portion of the metal case 9.
  • 9a When 9a is inserted into the screw hole 10 of the heat sink 1 and caulked, it penetrates the solder portion of the circuit conductor 12 of the ceramic substrate 3.
  • the contact plate 13 of the metal case 9 is automatically set to the same potential (grounding) with respect to the circuit conductor 12 of the ceramic substrate 3.
  • the metal case 9 can be held at a potential.
  • the contact plate 13 can be formed integrally by bending a part of the metal case 9.
  • FIGS. 4, 5, and 6 show a second embodiment of the present invention.
  • notches 14 for engagement are provided at opposing edges of the heat sink 1 without employing the above-mentioned force screw holes (see reference numeral 10 in FIG. 1A).
  • the elastic locking portion 15 of the metal case 9 is locked in the cutout portion 14, and the ceramic substrate 3 and the heat sink 1 are pressed into contact with the heat sink 1 via the non-conductive resin 2.
  • the contact plate 13 of the metal case 9 is brought into contact with the circuit conductor 12 on the ceramic substrate 3 so as to have the same potential.
  • the contact plate 13 has a substantially J-shape formed integrally with the metal case 9.
  • the assembling process is performed in the first embodiment shown in FIG. It can be considered that the step of force-shrinking indicated by reference symbol S5 of the step is removed, and instead the step of pressing the metal case 9 against the heat sink 1 is adopted.
  • the ceramic substrate 3 on which the hybrid IC is mounted and the terminal 20 is provided is provided with circuit conductors 12 at the four corners and formed at a predetermined interval at the rear. Alignment recesses 16 are provided.
  • the ceramic substrate 3 on which the hybrid IC is mounted is placed on a heat sink 1 coated with a non-conductive resin 2 in advance, and the ceramic substrate 3 is provided outside the resin 2 region of the heat sink 1.
  • the protrusions 17 for positioning in cooperation with the positioning recesses 16 of the printed circuit board are provided upright by the number of the recesses 16.
  • the ceramic substrate 3 is arranged at a predetermined position on the heat sink 1 by the concave portion 16 for positioning and the projection 1 ⁇ ⁇ ⁇ and pressed against each other.
  • a cutout portion 14 is provided on the opposite side of the heat sink 1 to engage with the elastic locking portion 15 of the metal case 9.
  • the notch 14 has an inclined surface 14a whose side surface is slightly notched and the upper surface is inclined downward, and a groove 14b is formed on the back surface to form the elastic locking portion 15.
  • the claw portion 15a slides down the inclined surface 14a and fits into the groove 14b.
  • contact plates 13 are integrally formed at the four corners of the back surface so that the metal case 9 can be electrically connected to the circuit conductors 12 at the four corners of the ceramic substrate 3 in a press-contact state. I'm sorry.
  • the elastic locking portion 15 which cooperates with the cutout portion 14 of the heat sink 1 is provided on the opposing side portion so as to protrude downward as shown in FIG. The locking portion 15 is subsequently bent inward, and a claw portion 15a bent further upward is formed.
  • the elastic locking portion 15 has its claw portion 15a. It moves downward while sliding on the inclined surface 14a, and is elastically fitted into the groove 14b of the notch 14 of the heat sink 1 to complete the assembly (see Fig. 5). Therefore, in the case of this embodiment, electrical and mechanical coupling can be easily achieved only by pressing the metal case 9 at a predetermined position of the heat sink 1.
  • a circuit board 4 is formed, a ceramic board 3 on which an element 5 is mounted, a heat sink 1, and a metal case 9 provided with a contact board are provided.
  • a part of the metal case 9 is bent so that the ceramic substrate 3 and the heat sink 1 are pressed into contact with each other via the non-conductive resin 2, and the contact plate 13 of the metal case 9 is connected to the ceramic substrate 3.
  • a configuration is adopted in which the same potential is brought into contact with the upper circuit conductors 12, so that the entire warpage of the conventional ceramic substrate 3 and the cracking of the ceramic substrate 3 can be eliminated.
  • the melting that occurs when the ceramic substrate 3 and the heat sink 1 are connected by the conventional solder is eliminated, and the structure is extremely simple, and a highly reliable and inexpensive integrated circuit device can be realized. .
  • the ceramic board 3 and the heat sink 1 can be connected to each other via the metal case 9 without using a solder or conductive adhesive, and are generated from electronic devices. Electromagnetic noise can be attenuated without EMI filters to a level that is not a practical problem. r
  • the metal case 8 In addition to the role of protecting the metal case 9 from dust and the like, the metal case 8 itself has a leaf spring that holds down the adhesive between the ceramic substrate 3 and the heat sink 1 when hardening. Therefore, it can be performed without using jigs and jigs.
  • a projection 7 or 17 (second embodiment) for positioning is provided on the heat sink 1 and the corresponding U-shaped notch 11 or recess 16 (second embodiment) is fitted with a ceramic. Since the heat radiation plate 1 and the ceramic substrate 3 are provided on the ceramic substrate 3, it is possible to easily and surely position the heat radiation plate 1 and the ceramic substrate 3. Accordingly, the ceramic substrate 3 can be prevented from being displaced or falling off, and workability is improved.
  • the conventional solder is not used for connecting the ceramic substrate 3 and the heat sink 1, the thick film conductor (through-hole) on the back surface of the ceramic substrate 3 is not used. Au, Ag, etc.) are eliminated and there is an advantage that reliability is improved. And the conventional solder And the use of conductive adhesive is eliminated, so that there is an advantage that correction and elimination due to a short circuit during assembly and the yield are improved. Also, since the number of cleaning steps can be reduced, the cost of products can be reduced.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Abstract

An integrated circuit device in which an element mounted on a substrate is fixed on a heat sink, is provided with a ceramic substrate having a circuit conductor theron and used to mount an element thereon, and a metal case covering the ceramic substrate and provided with a contact plate for pressing the circuit conductor. Part of the metal case is bent so as to press the ceramic substrate to the heat sink via a non-conductive resin. The contact plate of the metal case is in contact with the circuit conductor to make the level of electric potential of the metal case equal to that of the circuit conductor.

Description

明 糸田 集 積 回 路 装 置 技 術 分 野  Aki Itoda integration circuit device technology field
本発明は、 基板上に素子を実装して放熱板に取り付ける集 積回路装置に関する ものである。 背 景 技 術  The present invention relates to an integrated circuit device in which an element is mounted on a substrate and mounted on a heat sink. Background technology
従来、 T V , H D T V , C R Tなどのビデオ出力回路を集 積したビデオパッ クなる混成集積回路が商品化されている。 こ のような回路は、 高周波高出力が求められるため、 回路基板と してセラ ミ ッ クなどのような低誘電率素材を用い、 この表面に 回路導体とチッ プ素子を固着した構成となっている。 図 7を参 照して上記従来の構成を簡単に説明する。  Conventionally, a hybrid integrated circuit as a video pack in which video output circuits such as TV, HDTV, and CRT are integrated has been commercialized. Since such circuits require high-frequency, high-output, the circuit board is made of a low-dielectric material such as ceramic, and the circuit conductors and chip elements are fixed on the surface. ing. The above-mentioned conventional configuration will be briefly described with reference to FIG.
図 7 において、 放熱板 2 1 は、 銅やアルミ ダイキャス トな どの熱伝導性の良好な放熱板である。  In FIG. 7, the heat radiating plate 21 is a heat radiating plate having good thermal conductivity, such as copper or aluminum die cast.
セラ ミ ッ ク基板 2 2は、 放熱板 2 1上に半田を介して固着 したものであり、 回路導体 2 3 は、 セラ ミ ッ ク基板 2 2の上に 印刷などした導電性の厚膜である。  The ceramic substrate 22 is fixed on the heat sink 21 via solder, and the circuit conductor 23 is a conductive thick film printed on the ceramic substrate 22. is there.
素子 （半導体チッ プ） 2 4 は、 回路導体 2 3に半田付けあ るいはワイヤによつて電気接続した トラ ンジスタなどのチップ である。  The element (semiconductor chip) 24 is a chip such as a transistor which is electrically connected to the circuit conductor 23 by soldering or wire.
ヒー トスプレッダ 2 5は、 熱伝導性の優れた素材であつて、 セラ ミ ッ ク基板 2 2 との間の接触面積を増大してこの上に素子 (半導体チッ プ） 2 4を接着などして熱伝導性を良く するため のものである。 Heat spreader 25 is a material with excellent thermal conductivity, This is for increasing the contact area with the ceramic substrate 22 and bonding the element (semiconductor chip) 24 thereon to improve the thermal conductivity.
上蓋 2 6 は、 凹状の蓋であって、 全体を覆って放熱板 2 1 に接続し、 外部からのノイズの進入を防止する ものである。  The upper lid 26 is a concave lid, which covers the whole and is connected to the heat radiating plate 21 to prevent noise from entering from outside.
図 7 について上述したよ う に、 セラ ミ ッ ク基板 2 2 と放熱 板 2 1 を半田付けする際に 230〜 260 の高温にさ らされて加 熱され、 半田付け終了して冷却したときに、 セラ ミ ッ ク基板 2 2 と放熱板 2 1 の熱膨脹係数の相違により、 セラ ミ ッ ク基板 2 2の全体に反りが発生したり、 割れたりする事態が発生し、 熱 抵抗が増大して性能および信頼性が低下してしま う という問題 があった。  As described above with reference to FIG. 7, when the ceramic substrate 22 and the heat sink 21 are soldered, they are exposed to a high temperature of 230 to 260 and heated. However, due to the difference in thermal expansion coefficient between the ceramic substrate 22 and the heat sink 21, the entire ceramic substrate 22 may be warped or cracked, resulting in an increase in thermal resistance. There was a problem that performance and reliability were reduced.
また、 半田によってセラ ミ ッ ク基板 2 2の裏面の厚膜導体 やスルーホール内の導体 （Au， Ag, など） が溶解し、 電気接 続を失う問題があった。 これを防ぐために、 厚膜の二重印刷に よる導体の補強やガラスによるコーティ ングなどの工程の追加 を余儀な く されてしま う という問題もあった。  In addition, the solder dissolves the thick-film conductor on the back surface of the ceramic substrate 22 and the conductors (Au, Ag, etc.) in the through-holes, losing the electrical connection. In order to prevent this, there was also a problem that it was necessary to add processes such as reinforcing the conductor by double printing of a thick film and coating with glass.
また、 上蓋 2 6 と放熱板 2 1 との接合および気密補強と し て樹脂を使用 しているため、 両者のかみ合わせ部に樹脂が流れ 込み、 電気的に非接触となってしまい、 上蓋 2 6による シール ド効果が失われてしま うので、 組立時に細心の注意が必要とな つてしま う という問題があった。 発 明 の 開 示  In addition, since resin is used for joining the upper lid 26 and the heat sink 21 and for reinforcing the airtightness, the resin flows into the engagement portion of the two and becomes electrically non-contacting, so that the upper lid 26 is not electrically contacted. As a result, the shield effect is lost, so that close attention must be paid to the assembly. Disclosure of the invention
本発明は、 上記事情に鑑み、 これらの問題を解決するため、 基板の全体の反りや基板の割れがなく、 半田による溶解がなく、 構造が極めて簡単で高信頼性、 安価の集積回路装置を実現する ことを目的とする ものである。 The present invention has been made in view of the above circumstances, and in order to solve these problems, It is an object of the present invention to realize a highly reliable, inexpensive integrated circuit device that is extremely simple in structure, free from warpage of the entire substrate, cracking of the substrate, and melting by solder.
即ち、 本発明は、 基板上に素子を実装して放熱板に取り付 ける集積回路装置において、  That is, the present invention provides an integrated circuit device in which an element is mounted on a substrate and attached to a heat sink.
回路導体 1 2を形成すると共に、 素子 5を実装するセラ ミ ッ ク基板 3 と、  A ceramic substrate 3 on which the circuit conductors 12 are formed and the element 5 is mounted,
このセラ ミ ッ ク基板 3を覆う と共に上記セラ ミ ッ ク基板 3 に設けた回路導体 1 2を押圧する接触板 1 3を設けた金属ケー ス 9 とを備え、  A metal case 9 provided with a contact plate 13 for covering the ceramic substrate 3 and pressing a circuit conductor 12 provided on the ceramic substrate 3;
上記金属ケース 9の一部を曲げて上記セラ ミ ッ ク基板 3 と 上記放熱板 1 とを非導電性の樹脂 2を介して圧接するとともに、 上記金属ケース 9の接触板 1 3を上記セラ ミ ッ ク基板 3上の回 路基板 1 2 に接触して同電位にするように構成してなる集積回 路装置である。  A part of the metal case 9 is bent to press the ceramic substrate 3 and the heat sink 1 through the non-conductive resin 2 while pressing the contact plate 13 of the metal case 9 to the ceramic plate. This is an integrated circuit device configured to contact the circuit boards 12 on the circuit board 3 so as to have the same potential.
上記構成において、 上記放熱板 1 にビス穴 1 0を設け、 こ のビス穴 1 0 に上記金属ケース 9の凸部を挿入して押しつけて 上記セラ ミ ッ ク基板 3 と上記放熱板 1 とを非導電性の樹脂 2を 介して圧接させると共に、 上記金属ケース 9の接触板 1 3を上 記セラ ミ ッ ク基板 3上の回路導体 1 2に接触させて同電位とな るようにする こ と も可能である。 この場合、 上記の金属ケー ス 9 の凸部を円筒状或いはその他の形状と し、 この凸部を挿入し た後で力シメ るこ とにより、 上記セラ ミ ッ ク基板 3 と上記放熱 板 1 とを非導電性の樹脂 2を介して圧接させるこ と も可能であ る o 或いは、 上記力 シメゃビス穴を採用せずに、 上記放熱板 1 に対向する端縁に切欠部 1 4を設け、 この切欠部 1 4 に上記金 属ケース 9 の弾性係止部 1 5を係止させ、 上記セラ ミ ッ ク基板 3 と上記放熱板 1 とを非導電性の樹脂 2を介して圧接させると 共に、 上記金属ケース 9 の接触板 1 3を上記セラ ミ ッ ク基板 3 上の回路導体 1 2に接触させて同電位となるよ うにするこ と も 可能である。 In the above configuration, a screw hole 10 is provided in the heat sink 1, and a convex portion of the metal case 9 is inserted into the screw hole 10 and pressed to connect the ceramic substrate 3 and the heat sink 1. The metal plate 9 is brought into pressure contact with the non-conductive resin 2 and the contact plate 13 of the metal case 9 is brought into contact with the circuit conductor 12 on the ceramic substrate 3 so as to have the same potential. It is also possible. In this case, the convex portion of the metal case 9 is formed into a cylindrical shape or another shape, and after inserting the convex portion, force is applied to the ceramic substrate 3 and the heat radiating plate 1. Can be pressed through non-conductive resin 2 o Alternatively, a cutout portion 14 is provided at an edge facing the heat sink 1 without using the above-mentioned force screw hole, and the elastic locking portion 15 of the metal case 9 is provided in the cutout portion 14. The ceramic board 3 and the radiator plate 1 are pressed into contact with each other via the non-conductive resin 2 while the contact plate 13 of the metal case 9 is placed on the ceramic board 3. It is also possible to bring them into the same potential by contacting the circuit conductors 12 with each other.
上記構成により、 セラ ミ ッ ク基板 3の全体の反りやセラ ミ ッ ク基板の割れがなく 、 従来の半田によってセラ ミ ッ ク基板と 放熱板を接続したと きに生じる溶解がなく、 しかも構造が極め て簡単で高信頼性、 安価に集積回路装置を実現するこ とができ る 0  With the above configuration, there is no warpage of the entire ceramic substrate 3 and no cracking of the ceramic substrate, and there is no melting that occurs when the ceramic substrate and the heat sink are connected by conventional soldering. However, extremely simple, highly reliable, and inexpensive integrated circuit devices can be realized. 0
図面の簡単な説明  BRIEF DESCRIPTION OF THE FIGURES
図 1 Aは本発明による第 1 の実施例による集積回路装置の 断面図である。  FIG. 1A is a sectional view of an integrated circuit device according to a first embodiment of the present invention.
図 1 Bは図 1 Aに示した集積回路装置の平面図である。 図 2 は図 1 Aおよび図 1 Bに示す集積回路装置を作成する 工程に一例を示すフローチヤ一 トである。  FIG. 1B is a plan view of the integrated circuit device shown in FIG. 1A. FIG. 2 is a flowchart showing an example of a process for producing the integrated circuit device shown in FIGS. 1A and 1B.
図 3 Aは図 1 A及び図 1 Bに示した集積回路装置の要部断 面図である。  FIG. 3A is a sectional view of a principal part of the integrated circuit device shown in FIGS. 1A and 1B.
図 3 Bは図 3 Aに示した集積回路装置要部の中の接触板の 斜視図である。  FIG. 3B is a perspective view of a contact plate in a main part of the integrated circuit device shown in FIG. 3A.
図 4 は本発明の第 2の実施例によるよる集積回路装置の分 解斜視図である。  FIG. 4 is an exploded perspective view of an integrated circuit device according to a second embodiment of the present invention.
図 5 は図 4 に示した本発明の第 2実施例による集積回路装 置の組みたて後の斜視図である。 FIG. 5 shows an integrated circuit device according to the second embodiment of the present invention shown in FIG. FIG. 4 is a perspective view of the device after being assembled.
図 6は図 5の A— A線に沿った断面図である。  FIG. 6 is a cross-sectional view taken along line AA of FIG.
図 7は従来技術を示す断面図である。 発明を実施するための最良の形態 以下、 本発明の実施例を図面に基づいて説明する。  FIG. 7 is a cross-sectional view showing a conventional technique. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第 1の実施例 First embodiment
図 1 A , 図 1 B及び図 2において、 放熱板 1 は、 セラ ミ ツ ク基板 3を非導電性の樹脂 2を介して接触し、 熱を外部に放出 して放熱効果を備える ものである。 この放熱板 1 は、 板厚 1. 0 〜 3. Ommの銅系素材からなる板状の材料を打ち抜き加工して作 製し、 表面に銅系素材の酸化防止のために N i メ ツキを施し、 図 1 Bに示すように両端にパッケージを別の放熱部材に固定す る ビスを挿通するための円形の貫通孔を形成したものである。  In FIGS. 1A, 1B and 2, the heat radiating plate 1 has a heat radiating effect by contacting the ceramic substrate 3 via the non-conductive resin 2 and releasing heat to the outside. . The heat sink 1 is made by punching a plate-shaped material made of a copper material having a thickness of 1.0 to 3. Omm, and has a Ni plating on the surface to prevent oxidation of the copper material. As shown in FIG. 1B, a circular through hole is formed at both ends for inserting screws for fixing the package to another heat dissipating member.
樹脂 2 は、 セラ ミ ッ ク基板 3を放熱板 1 に接触させて熱を 伝導させる ものであ って、 例えば熱拡散用のシ リ コ ン樹脂とす る。 この樹脂 2 は、 放熱板 1上に均一に薄く塗布したり、 印刷 する こ とができる。 こ こでは、 非導電性の熱拡散用シ リ コ ン樹 脂を用い、 ス ク リ ー ン印刷機を使用して放熱板 1上に厚さ 2 0 m以下に均一に塗布する。  The resin 2 serves to conduct heat by bringing the ceramic substrate 3 into contact with the heat sink 1 and is, for example, a silicon resin for heat diffusion. This resin 2 can be uniformly thinly applied on the heat sink 1 or printed. Here, using a non-conductive silicone resin for thermal diffusion, a screen printer is used to uniformly apply a thickness of 20 m or less on the heat sink 1.
セラ ミ ッ ク基板 3 は、 板厚 0. 2〜： I . 0 mmのアルミ ナ （ A 1 2 0 3、 A 1 N ) 素材からなり、 裏面に銀パラ ジウム層 （ G N D ) を形成し、 表面に回路網を構成するための金属厚膜からな る多数の回路導体 1 2を形成する。 回路導体 1 2 は、 例えば銅 ペース トのスク リ ー ン印刷法によって描画し、 要部を除いて絶 縁膜によって保護する。 セラ ミ ッ ク基板 3の両端には、 U字型 切欠 1 1 を形成し、 この U字型切欠 1 1 の中に、 放熱板 1 に形 成した位置合わせ突起 7がセラ ミ ッ ク基板 3 と放熱板 1 との位 置合わせと して納ま る。 U字型切欠 1 1 は、 金型成形あるいは レーザー加工にて作製できる。 Sera Mi click substrate 3, thickness 0. 2~:. I 0 mm of alumina (A 1 2 0 3, A 1 N) made of a material, silver palladium layer (GND) is formed on the back surface, A large number of circuit conductors 12 made of a thick metal film for forming a circuit network are formed on the surface. The circuit conductors 12 are drawn by, for example, a screen printing method using copper paste, and are insulated except for main parts. Protected by the rim. A U-shaped notch 11 is formed at each end of the ceramic substrate 3, and a positioning protrusion 7 formed on the heat sink 1 is formed in the U-shaped notch 11 in the ceramic substrate 3. And the position of heat sink 1. The U-shaped notch 11 can be formed by die molding or laser processing.
回路導体 4は、 セラ ミ ッ ク基板 3上に金属厚膜を形成して 素子 5などを接続する ものである。  The circuit conductor 4 forms a thick metal film on the ceramic substrate 3 and connects the element 5 and the like.
素子 5 は、 半導体チッ プなどの素子であって N P N トラ ン ジスタ、 P N P ト ラ ン ジスタなどの動作に発熱を伴う ものであ り、 熱伝導性の優れた銅系素材からなる板厚 0. 2〜 0. 5mmの ヒ 一 トスプレッ ダ 6上に A u— S i 共晶で固着するものである。 ヒー トスプレ ッダ 6上に固着された素子 5は、 セラ ミ ッ ク基板 3の表面に構成された回路導体 4 に A u _ S n共晶にて固着す る。 そ して、 素子 5の表面に形成した電極パッ ドと、 回路導体 4 とを金線 8でワイヤボン ドし、 電気的に接続する。  Element 5 is an element such as a semiconductor chip, which generates heat when operating an NPN transistor, a PNP transistor, etc., and has a thickness of 0. Au-Si eutectic adheres to the heat spreader 6 of 2 to 0.5 mm. The element 5 fixed on the heat spreader 6 is fixed to the circuit conductor 4 formed on the surface of the ceramic substrate 3 by Au_Sn eutectic. Then, the electrode pad formed on the surface of the element 5 and the circuit conductor 4 are wire-bonded with the gold wire 8 to be electrically connected.
位置合わせ突起 7は、 放熱板 1上にセラ ミ ッ ク基板 3を位 置合わせするための突起である。 また、 金線 8 は素子 5の電極 パッ ドと回路導体 4 とを接続する接続線である。  The positioning protrusion 7 is a protrusion for positioning the ceramic substrate 3 on the heat sink 1. The gold wire 8 is a connection wire for connecting the electrode pad of the element 5 and the circuit conductor 4.
金属ケース 9 は、 凸型の形状をし、 厚さ 0. 2〜 0. 3mm程度 のバネ性の高いステン レス鋼を用い、 プレス加工にて作製した ものである。 金属ケース 9 の取り付けは、 当該金属ケースのプ レス加工にて形成した円筒部 9 aを、 放熱板 1 のビス穴に 1 0 挿入し、 このビス穴 1 0の 6 0〜 9 0度程度のテーパー部に力 シメて締め付けて固定する。 この際、 金属ケース 9の内部に設 けたパネ性の接触板 1 3がセラ ミ ッ ク基板 3上の半田付けした 回路導体 1 2 に突き刺さるように押し下げ、 金属ケース 9 とセ ラ ミ ッ ク基板 3の回路導体 4 と同電位に接続する。 The metal case 9 has a convex shape and is formed by press working using stainless steel having a high spring property and a thickness of about 0.2 to 0.3 mm. To attach the metal case 9, insert the cylindrical part 9a formed by pressing the metal case into the screw hole of the heatsink 1, and insert it into the screw hole 10 at about 60 to 90 degrees. Fix the taper by tightening it with force. At this time, the panel-like contact plate 13 provided inside the metal case 9 was soldered on the ceramic substrate 3. Push down so as to pierce the circuit conductors 12 and connect them to the same potential as the metal case 9 and the circuit conductors 4 of the ceramic substrate 3.
ビス穴 1 0 は、 放熱板 1 を他の放熱板などに固定するため のビス穴である。 こ こでは、 ビス穴の下部に 60 〜 90度の角度 のテーパーを設け、 この部分に金属ケース 9の円筒部 9 aを挿 入してかしめて固定する。 そ して、 この金属ケース 9をかしめ た状態で、 ビスで他の放熱板などに固定すると、 金属ケース、 ビス、 他の金属ケースという経路で自動的に電気的接続が達成 できる。  The screw hole 10 is a screw hole for fixing the heat sink 1 to another heat sink or the like. Here, a taper having an angle of 60 to 90 degrees is provided at the lower part of the screw hole, and the cylindrical portion 9a of the metal case 9 is inserted into this portion and fixed by caulking. Then, when the metal case 9 is caulked and fixed to another heat radiating plate or the like with screws, electrical connection can be automatically achieved through the path of the metal case, screws, and other metal cases.
U字型切欠 1 1 は、 金属ケース 9を U字型に切り欠いたも のであって、 この部分に位置合わせ突起 7が位置する。  The U-shaped notch 11 is obtained by cutting the metal case 9 into a U-shape, and the positioning projection 7 is located at this portion.
回路導体 1 2 は、 セラ ミ ッ ク基板 3上に設けた金属の厚膜 であって、 素子 5などを電気的に接続するためのものである。  The circuit conductor 12 is a thick metal film provided on the ceramic substrate 3 for electrically connecting the element 5 and the like.
接触板 1 3は、 金属ケース 9 に設けたものであって、 パネ 性であり、 金属ケース 9の円筒部分を放熱板 1 のビス穴 1 0に 挿入してかしめて固定したときに、 セラ ミ ッ ク基板 3の半田付 けした回路導体 1 2の上の半田に食い込んで電気的に当該金属 ケース 9 と回路導体 1 2 とを接続する ものである。 通常は、 回 路導体 1 2をアースに接続する。  The contact plate 13 is provided on the metal case 9 and has a panel shape. When the cylindrical portion of the metal case 9 is inserted into the screw hole 10 of the heat sink 1 and caulked and fixed, the contact plate 13 is removed. The metal case 9 and the circuit conductor 12 are electrically connected to each other by digging into the solder on the soldered circuit conductor 12 of the circuit board 3. Normally, circuit conductors 12 are connected to ground.
次に、 図 2のフ ローチャ ー トを参照して図 1 Aおよび図 1 Bの実施例の場合の製造工程を説明する。  Next, the manufacturing process in the case of the embodiment of FIGS. 1A and 1B will be described with reference to the flowchart of FIG.
図 2 において、 ステ ッ プ S 1 ではハイ プ リ ッ ド I Cを作製 する。 これは例えば図 1 Aのセラ ミ ッ ク基板 3上に素子 5 と し て半導体チッ プを実装したハイプリ ッ ド I Cを形成する。  In FIG. 2, in step S1, a hybrid IC is manufactured. For example, a hybrid IC in which a semiconductor chip is mounted as a device 5 on the ceramic substrate 3 of FIG. 1A is formed.
ステ ッ プ S 2 は、 放熱板 1 にシ リ コ ン樹脂印刷する。 これ は、 柔らかい樹脂、 例えば厚さが 20〃 m以下のシ リ コ ン樹脂で 放熱板 1上にセラ ミ ッ ク基板 3を乗せる部分に印刷する。 In step S2, the heat sink 1 is printed with silicone resin. this Is printed on a portion of the heat sink 1 on which the ceramic substrate 3 is to be mounted using a soft resin, for example, a silicon resin having a thickness of 20 m or less.
ステッ プ S 3 は、 ハイ ブリ ッ ド I Cを放熱板 1上に仮付け する。 これは、 S 2で放熱板上に厚さが 20 m以下のシ リ コ ン 樹脂を印刷した上に、 当該放熱板 1 の位置合わせ突起 7 にセラ ミ ッ ク基板 3 (ハイ プリ ッ ド I C ) の位置合わせ用の穴を挿入 して仮付けする。  In step S 3, the hybrid IC is temporarily attached on the heat sink 1. This is done by printing a silicone resin with a thickness of 20 m or less on the heat sink in S2, and attaching the ceramic substrate 3 (high- ) Insert the holes for positioning and temporarily attach them.
ステッ プ S 4 は、 金属ケース 9を力 シメ て回路基板を放熱 板 1 に圧接する。 これは、 ステッ プ S 4の状態で、 金属ケース 9の円筒を放熱板のビス穴 1 0に挿入した状態で、 カ ンヌて金 属ケース 9を放熱板 1 に固定する。 これにより、 金属ケース 9 によって、 セラ ミ ッ ク基板 3が樹脂 2を介して放熱板 1 に圧接 され、 両者の熱伝導性が良い状態に保持される こ ととなる。 ま た、 金属ケース 9の接触板 1 3がセラ ミ ッ ク基板 3の回路導体 4の半田に食い込んで同電位になる。 これらにより、 金属ケ一 ス 9 と接触板 1 と回路基板 4 とが接続され、 金属ケース 9が例 えば接地電位に接続される。 また、 セラ ミ ッ ク基板 3が非導電 性の薄い樹脂 2を介して放熱板 1 に圧接され、 回路基板と放熱 板との熱伝導性が向上される。  In step S 4, the circuit board is pressed against the heat sink 1 by squeezing the metal case 9. In this case, the metal case 9 is fixed to the heat sink 1 by canning with the cylinder of the metal case 9 inserted into the screw hole 10 of the heat sink in the state of step S4. As a result, the ceramic substrate 3 is pressed into contact with the radiator plate 1 via the resin 2 by the metal case 9, and the thermal conductivity of the two is maintained in a good state. Further, the contact plate 13 of the metal case 9 cuts into the solder of the circuit conductor 4 of the ceramic substrate 3 and becomes the same potential. As a result, the metal case 9, the contact plate 1, and the circuit board 4 are connected, and the metal case 9 is connected to, for example, the ground potential. Further, the ceramic substrate 3 is pressed into contact with the heat radiating plate 1 via the non-conductive thin resin 2 to improve the thermal conductivity between the circuit board and the heat radiating plate.
上記構成によって、 図 1 Aおよび図 1 Bの放熱板 1上に非 導電性の樹脂 2を薄く 印刷し、 この上にセラ ミ ッ ク基板 3を載 置し、 更にこの上から金属ケース 9を載置してその円筒部 9 a を放熱板 1の ビス穴 1 0 に挿入して力シメて固定する といぅ簡 単な工程により、 ハイ プリ ッ ド I Cを搭載したセラ ミ ッ ク基板 3を放熱板 1 に伝導性良好に圧接する と共に、 金属ケース 9を 自動的にセラ ミ ッ ク基板 3 の接地電位に接続したり放熱板 1 に 接続したりする こ とが可能である。 According to the above configuration, a non-conductive resin 2 is thinly printed on the heat sink 1 shown in FIGS. 1A and 1B, a ceramic substrate 3 is placed thereon, and a metal case 9 is further placed thereon. The ceramic substrate 3 on which the hybrid IC is mounted is mounted in a simple process by placing the cylindrical portion 9a into the screw hole 10 of the heat sink 1 and fixing it with a force. While being pressed against the heat sink 1 with good conductivity, the metal case 9 It is possible to automatically connect to the ground potential of ceramic substrate 3 or to heat sink 1.
図 3 Aと、 図 3 Aの矢印 Aから見た状態を示す図 3 Bにお いて、 接触板 1 3は、 金属ケース 9に取り付けたパネ性の板で あって、 金属ケース 9の円筒部 9 aを放熱板 1 のビス穴 1 0に 挿入してカシメ たと きに、 セラ ミ ッ ク基板 3の回路導体 1 2の 半田の部分に突き刺さ るものである。 これにより、 金属ケース 9を放熱板 1 にカシメ る という簡単な操作によって、 金属ケー ス 9の接触板 1 3を自動的にセラ ミ ッ ク基板 3 の回路導体 1 2 に対して同電位 （接地電位） に上記金属ケース 9を保持するこ とが可能となる。 なお、 上記接触板 1 3 は金属ケース 9の一部 を折曲して一体に形成するこ と も可能である。  In FIG. 3A and FIG. 3B showing the state viewed from the arrow A in FIG. 3A, the contact plate 13 is a panel-like plate attached to the metal case 9, and a cylindrical portion of the metal case 9. When 9a is inserted into the screw hole 10 of the heat sink 1 and caulked, it penetrates the solder portion of the circuit conductor 12 of the ceramic substrate 3. Thus, by a simple operation of caulking the metal case 9 to the heat sink 1, the contact plate 13 of the metal case 9 is automatically set to the same potential (grounding) with respect to the circuit conductor 12 of the ceramic substrate 3. The metal case 9 can be held at a potential. The contact plate 13 can be formed integrally by bending a part of the metal case 9.
第 2の実施例 Second embodiment
図 4、 図 5および図 6 はこの発明の第 2の実施例を示して いる。 この第 2の実施例では、 上記力シメゃビス穴 （図 1 Aの 符号 1 0参照） を採用せずに、 上記放熱板 1 の対向する端縁に 係合用の切欠部 1 4を設け、 この切欠部 1 4に上記金属ケース 9 の弾性係止部 1 5を係止させ、 上記セラ ミ ッ ク基板 3 と上記 放熱板 1 とを非導電性の樹脂 2を介して圧接させるだけで両者 の係合を達成する と共に、 上記金属ケース 9の接触板 1 3を上 記セラ ミ ッ ク基板 3上の回路導体 1 2 に接触させて同電位とな るよう に構成したものである。 また、 上記接触板 1 3 は、 この 実施例では金属ケース 9 と一体に形成された大略 J字状の構成 となっている。  FIGS. 4, 5, and 6 show a second embodiment of the present invention. In the second embodiment, notches 14 for engagement are provided at opposing edges of the heat sink 1 without employing the above-mentioned force screw holes (see reference numeral 10 in FIG. 1A). The elastic locking portion 15 of the metal case 9 is locked in the cutout portion 14, and the ceramic substrate 3 and the heat sink 1 are pressed into contact with the heat sink 1 via the non-conductive resin 2. And the contact plate 13 of the metal case 9 is brought into contact with the circuit conductor 12 on the ceramic substrate 3 so as to have the same potential. In this embodiment, the contact plate 13 has a substantially J-shape formed integrally with the metal case 9.
従って、 組立て工程と しては、 図 2で示した第 1 の実施例 の工程の符号 S 5で示した力シメ の工程を取り除き、 その代わ りに金属ケース 9を放熱板 1 に押し当てる工程と したものと考 えて良い。 Therefore, the assembling process is performed in the first embodiment shown in FIG. It can be considered that the step of force-shrinking indicated by reference symbol S5 of the step is removed, and instead the step of pressing the metal case 9 against the heat sink 1 is adopted.
即ち、 図 4において、 ハイブリ ツ ド I Cを搭載し、 端子 2 0を設けたセラ ミ ッ ク基板 3は、 その四隅に回路導体 1 2を配 置し、 後部には所定の間隔をおいて形成した位置合わせ凹所 1 6を設ける。 このハイブリ ッ ド I C搭載のセラ ミ ック基板 3は、 予め非導電性の樹脂 2を塗布した放熱板 1 に載置されるが、 放 熱板 1 の樹脂 2領域の外側には前記セラ ミ ッ ク基板の位置合わ せ凹所 1 6 と協働して位置合わせを行うための突起 1 7が凹所 1 6の数だけ立設されている。 かく して、 位置合わせのための 凹所 1 6 と突起 1 Ί とにより放熱板 1上の所定位置にセラ ミ ッ ク基板 3が配置され圧接される。  That is, in FIG. 4, the ceramic substrate 3 on which the hybrid IC is mounted and the terminal 20 is provided is provided with circuit conductors 12 at the four corners and formed at a predetermined interval at the rear. Alignment recesses 16 are provided. The ceramic substrate 3 on which the hybrid IC is mounted is placed on a heat sink 1 coated with a non-conductive resin 2 in advance, and the ceramic substrate 3 is provided outside the resin 2 region of the heat sink 1. The protrusions 17 for positioning in cooperation with the positioning recesses 16 of the printed circuit board are provided upright by the number of the recesses 16. Thus, the ceramic substrate 3 is arranged at a predetermined position on the heat sink 1 by the concave portion 16 for positioning and the projection 1 さ れ る and pressed against each other.
更に、 図 4 と図 6 に示すように放熱板 1の対向する側部に は、 金属ケース 9 の弾性係止部 1 5 と係合する切欠部 1 4を設 けてある。 この切欠部 1 4 はその側面がやや切欠され且つ上面 が下方に傾斜した傾斜面 1 4 aを有する こ との他、 その裏面に は溝 1 4 bが形成されて弾性係止部 1 5 の爪部 1 5 aが上記傾 斜面 1 4 aを滑り落ちて上記溝 1 4 bに嵌ま り込めるようにな つている。  Further, as shown in FIG. 4 and FIG. 6, a cutout portion 14 is provided on the opposite side of the heat sink 1 to engage with the elastic locking portion 15 of the metal case 9. The notch 14 has an inclined surface 14a whose side surface is slightly notched and the upper surface is inclined downward, and a groove 14b is formed on the back surface to form the elastic locking portion 15. The claw portion 15a slides down the inclined surface 14a and fits into the groove 14b.
この実施例の金属ケース 9 は、 その裏面の四隅に接触板 1 3が一体に形成されていて前記セラ ミ ッ ク基板 3の四隅の回路 導体 1 2 と圧接状態で電気的に接続できるようになつている。 更に、 対向する側部には前記放熱板 1 の切欠部 1 4 と協働して 係合する前記の弾性係止部 1 5が図示のように下方に突設し、 この係止部 1 5 は引き続いて内側に折曲し、 更に上方に折り曲 がつた爪部 1 5 aが形成されている。 In the metal case 9 of this embodiment, contact plates 13 are integrally formed at the four corners of the back surface so that the metal case 9 can be electrically connected to the circuit conductors 12 at the four corners of the ceramic substrate 3 in a press-contact state. I'm sorry. Further, the elastic locking portion 15 which cooperates with the cutout portion 14 of the heat sink 1 is provided on the opposing side portion so as to protrude downward as shown in FIG. The locking portion 15 is subsequently bent inward, and a claw portion 15a bent further upward is formed.
上記の構成により、 放熱板 1上にセラ ミ ッ ク基板 3を載置 させた後で、 金属ケース 9を被せて押圧すれば、 上記弾性係止 部 1 5 は、 その爪部 1 5 aが傾斜面 1 4 aを滑りながら下方に 移動して放熱板 1 の切欠部 1 4の溝 1 4 bに弾性的に嵌合し、 組立が終了する （図 5参照） 。 従って、 この実施例の場合には、 金属ケース 9を放熱板 1の所定位置に合わせて押圧するだけで 電気的および機械的な結合が簡単に達成できる。  With the above configuration, after placing the ceramic substrate 3 on the heat sink 1 and then pressing it over the metal case 9, the elastic locking portion 15 has its claw portion 15a. It moves downward while sliding on the inclined surface 14a, and is elastically fitted into the groove 14b of the notch 14 of the heat sink 1 to complete the assembly (see Fig. 5). Therefore, in the case of this embodiment, electrical and mechanical coupling can be easily achieved only by pressing the metal case 9 at a predetermined position of the heat sink 1.
以上説明したように、 本発明によれば、 回路導体 4を形成 し、 素子 5を実装するセラ ミ ッ ク基板 3 と、 放熱板 1 と、 接触 板を設けた金属ケース 9 とを設け、 この金属ケース 9 の一部を 曲げてセラ ミ ッ ク基板 3 と放熱板 1 とを非導電性の樹脂 2を介 して圧接させると共に、 金属ケース 9の接触板 1 3をセラ ミ ッ ク基板 3上の回路導体 1 2 に接触して同電位にする構成を採用 しているため、 従来のセラ ミ ッ ク基板 3の全体の反りやセラ ミ ッ ク基板 3の割れをなく すこ とができ、 従来の半田によってセ ラ ミ ッ ク基板 3 と放熱板 1 を接続したときに生じる溶解がな く なり、 しかも構造が極めて簡単で高信頼性、 安価に集積回路装 置を実現する こ とができる。  As described above, according to the present invention, a circuit board 4 is formed, a ceramic board 3 on which an element 5 is mounted, a heat sink 1, and a metal case 9 provided with a contact board are provided. A part of the metal case 9 is bent so that the ceramic substrate 3 and the heat sink 1 are pressed into contact with each other via the non-conductive resin 2, and the contact plate 13 of the metal case 9 is connected to the ceramic substrate 3. A configuration is adopted in which the same potential is brought into contact with the upper circuit conductors 12, so that the entire warpage of the conventional ceramic substrate 3 and the cracking of the ceramic substrate 3 can be eliminated. The melting that occurs when the ceramic substrate 3 and the heat sink 1 are connected by the conventional solder is eliminated, and the structure is extremely simple, and a highly reliable and inexpensive integrated circuit device can be realized. .
これらにより、 以下のような作用効果が達成される。  As a result, the following functions and effects are achieved.
( 1 ) セラ ミ ッ ク基板 3 と放熱板 1 との電気的接続に、 半 田や導電性の接着材を使わなく ても、 金属ケース 9を介して両 者を接続でき、 電子機器から発生する電磁ノ イズを E M I フ ィ ルタなしで実用上問題にならない程度まで減衰させる こ とがで r (1) The ceramic board 3 and the heat sink 1 can be connected to each other via the metal case 9 without using a solder or conductive adhesive, and are generated from electronic devices. Electromagnetic noise can be attenuated without EMI filters to a level that is not a practical problem. r
きる。 Wear.
( 2 ) 金属ケース 9 は、 ゴミ などから保護する役割の他に セラ ミ ッ ク基板 3 と放熱板 1 との接着材による硬化時の押さえ を、 金属ケース 8 自体に板バネを持たせているので、 治具 · ェ 具を使用せずに行う こ とができる。  (2) In addition to the role of protecting the metal case 9 from dust and the like, the metal case 8 itself has a leaf spring that holds down the adhesive between the ceramic substrate 3 and the heat sink 1 when hardening. Therefore, it can be performed without using jigs and jigs.
( 3 ) 金属ケース 9の取り付けにおいて、 放熱板 1のビス 穴 1 0を利用 して力 シメて行う実施例では、 単に力シメ るだけ であるので簡単な工程で済み、 しかもビス穴 1 0を通して導電 性のビスで他の放熱板に固定すると自動的に電気接続が可能と なる。  (3) In the embodiment in which the metal case 9 is attached by using the screw hole 10 of the heat sink 1 by force-screwing, a simple process is required because only force-screwing is performed, and the screw hole 10 is used. If it is fixed to another heat sink with conductive screws, electrical connection will be possible automatically.
( 4 ) 図 4、 図 5および図 6で示した第 2実施例の場合は、 ノヽイブリ ツ ド I Cのセラ ミ ッ ク基板 3を放熱板 1 に仮付けした 後で金属ケース 9を乗せて押し付けるだけで係合が達成できる ので、 上記のカシメ による工程より も更に簡単に係合が達成で き る。  (4) In the case of the second embodiment shown in FIGS. 4, 5, and 6, the ceramic board 3 of the hybrid IC is temporarily attached to the heat sink 1, and then the metal case 9 is placed thereon. Since the engagement can be achieved only by pressing, the engagement can be achieved more easily than in the above-described crimping process.
( 5 ) 放熱板 1上に位置合わせ用の突起 7 または 1 7 (第 2実施例） を設け、 これに対応する U字型切欠 1 1 または凹所 1 6 (第 2実施例） をセラ ミ ッ ク基板 3 に設けてあるので、 放 熱板 1 とセラ ミ ッ ク基板 3 とを簡単に且つ確実に位置合わせす る こ とができる。 従って、 セラ ミ ッ ク基板 3のずれや脱落を防 止でき、 作業性が向上する。  (5) A projection 7 or 17 (second embodiment) for positioning is provided on the heat sink 1 and the corresponding U-shaped notch 11 or recess 16 (second embodiment) is fitted with a ceramic. Since the heat radiation plate 1 and the ceramic substrate 3 are provided on the ceramic substrate 3, it is possible to easily and surely position the heat radiation plate 1 and the ceramic substrate 3. Accordingly, the ceramic substrate 3 can be prevented from being displaced or falling off, and workability is improved.
( 6 ) さ らには、 本発明ではセラ ミ ッ ク基板 3 と放熱板 1 との接続に従来の半田を使用 しないので、 セラ ミ ッ ク基板 3の 裏面のスルーホール部の厚膜導体 （Au, Ag, など） の溶解が 無く なり、 信頼性が向上する利点がある。 そ して、 従来の半田 や導電性接着材の使用が無く なるので、 組み立て時の短絡によ る修正削除および歩留ま りが向上する利点がある。 また、 洗浄 工程が削減できるため製品のコス ト低減が可能となる。 (6) Further, in the present invention, since the conventional solder is not used for connecting the ceramic substrate 3 and the heat sink 1, the thick film conductor (through-hole) on the back surface of the ceramic substrate 3 is not used. Au, Ag, etc.) are eliminated and there is an advantage that reliability is improved. And the conventional solder And the use of conductive adhesive is eliminated, so that there is an advantage that correction and elimination due to a short circuit during assembly and the yield are improved. Also, since the number of cleaning steps can be reduced, the cost of products can be reduced.

Claims

請 求 の 範 囲 The scope of the claims
1. 基板上に素子を実装して放熱板に取り付ける集積回路装置 において、 1. In an integrated circuit device where elements are mounted on a board and mounted on a heat sink,
回路導体 （ 1 2 ) を形成すると共に、 素子 （5) を実装す るセラ ミ ツ ク基板 （ 3) と、  A ceramic substrate (3) on which the circuit conductor (12) is formed and the element (5) is mounted;
このセラ ミ ッ ク基板 （ 3) を覆う と共に上記セラ ミ ッ ク基 板 （ 3 ) に設けた回路導体 （ 1 2 ) を押圧する接触板 （ 1 3) を設けた金属ケース （ 9) とを備え、  A metal case (9) provided with a contact plate (13) for covering the ceramic substrate (3) and pressing a circuit conductor (12) provided on the ceramic substrate (3) is attached. Prepare,
上記金属ケース （9) の一部を曲げて上記セラ ミ ッ ク基板 ( 3) と上記放熱板 （ 1 ) とを非導電性の樹脂 （2) を介して 圧接すると と もに、 上記金属ケース （9 ) の接触板 （13) を上 記セラ ミ ッ ク基板 （ 3) 上の回路基板 （ 1 2) に接触して同電 位にするよう に構成してなる集積回路装置。  A part of the metal case (9) is bent to press the ceramic board (3) and the heat sink (1) through a nonconductive resin (2) and press the metal case (9). An integrated circuit device configured so that the contact plate (13) of (9) contacts the circuit board (12) on the ceramic substrate (3) to have the same potential.
2. 上記放熱板 （ 1 ) に ビス穴 （ 1 0 ) を設け、 こ の ビス穴 ( 1 0 ) に上記金属ケース （ 9) の凸部を挿入して押しつけて 上記セラ ミ ッ ク基板 （ 3 ) と上記放熱板 （ 1 ) とを非導電性の 樹脂 （2) を介して圧接させると共に、 上記金属ケース （ 9) の接触板 （ 1 3 ) を上記セ ラ ミ ッ ク基板 （ 3 ) 上の回路導体 ( 1 2 ) に接触させて同電位とする請求項 1の集積回路装置。 2. Provide a screw hole (10) in the heat sink (1), insert the convex part of the metal case (9) into the screw hole (10), press it down, and press the ceramic board (3). ) And the radiator plate (1) are pressed against each other via the non-conductive resin (2), and the contact plate (13) of the metal case (9) is placed on the ceramic substrate (3). 2. The integrated circuit device according to claim 1, wherein said integrated circuit device is brought into contact with said circuit conductor (12) to have the same potential.
3. 上記の金属ケース （9 ) の凸部を円筒状と し、 この凸部を 挿入した後で力シメ る こ とにより、 上記セラ ミ ッ ク基板 （ 3 ) と上記放熱板 （ 1 ) とを非導電性の樹脂 （2 ) を介して圧接さ せてなる請求項 2の集積回路装置。 3. The convex part of the metal case (9) is made cylindrical, and the ceramic substrate (3) is formed by inserting this convex part and then crimping it. 3. The integrated circuit device according to claim 2, wherein said heat radiating plate is pressed against said heat radiating plate via a non-conductive resin.
4. 上記放熱板 （1 ) の対向する端縁に切欠部 （14) を設け、 この切欠部 （ 1 4) に上記金属ケース （9) の弾性係止部 （ 1 5) を係止させ、 上記セラ ミ ッ ク基板 （3) と上記放熱板 （1) とを非導電性の樹脂 （2) を介して圧接させると共に、 上記金 属ケース （ 9 ) の接触板 （ 1 3 ) を上記セラ ミ ッ ク基板 （3 ) 上の回路導体 （ 1 2) に接触させて同電位となるように した請 求項 1の集積回路装置。 4. A notch (14) is provided at the opposite edge of the heat sink (1), and the elastic locking portion (15) of the metal case (9) is locked in the notch (14). The ceramic substrate (3) and the radiator plate (1) are pressed into contact with each other via the non-conductive resin (2), and the contact plate (13) of the metal case (9) is pressed against the ceramic plate. The integrated circuit device according to claim 1, wherein said integrated circuit device is brought into contact with a circuit conductor (12) on a micro substrate (3) to have the same potential.
5. 上記接触板は、 金属ケースと一体に形成してなる請求項 4 の集積回路装置。 5. The integrated circuit device according to claim 4, wherein the contact plate is formed integrally with a metal case.
PCT/JP1994/001963 1994-11-21 1994-11-21 Integrated circuit device WO1996016444A1 (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS637983A (en) * 1986-06-30 1988-01-13 株式会社東芝 Card type electronic circuit unit
JPH0563136A (en) * 1991-08-31 1993-03-12 Nec Corp Hybrid integrated circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS637983A (en) * 1986-06-30 1988-01-13 株式会社東芝 Card type electronic circuit unit
JPH0563136A (en) * 1991-08-31 1993-03-12 Nec Corp Hybrid integrated circuit device

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