WO1995033285A1 - Fine couche de silicium appliquee sur un substrat de verre - Google Patents

Fine couche de silicium appliquee sur un substrat de verre Download PDF

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Publication number
WO1995033285A1
WO1995033285A1 PCT/EP1995/002059 EP9502059W WO9533285A1 WO 1995033285 A1 WO1995033285 A1 WO 1995033285A1 EP 9502059 W EP9502059 W EP 9502059W WO 9533285 A1 WO9533285 A1 WO 9533285A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
intermediate layer
semiconductor device
semiconductor
substrate
Prior art date
Application number
PCT/EP1995/002059
Other languages
German (de)
English (en)
Inventor
Jürgen Werner
Ralf Bergmann
Original Assignee
MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. filed Critical MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V.
Publication of WO1995033285A1 publication Critical patent/WO1995033285A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Une couche intermédiaire (2) sur laquelle une couche semi-conductrice (3) est obtenue par croissance, est appliquée sur un substrat (1). La structure réticulée de la couche intermédiaire (2) est adaptée à celle de la couche semi-conductrice (3) et fait ainsi office de couche de nucléation. La couche intermédiaire (2) peut être avantageusement réalisée dans des siliciures afin de pouvoir être utilisée également comme électrode, en raison de sa conductivité, par ex. dans une structure de cellule solaire.
PCT/EP1995/002059 1994-05-31 1995-05-30 Fine couche de silicium appliquee sur un substrat de verre WO1995033285A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP4419080.8 1994-05-31
DE4419080A DE4419080A1 (de) 1994-05-31 1994-05-31 Silizium-Dünnschicht auf Glassubstrat

Publications (1)

Publication Number Publication Date
WO1995033285A1 true WO1995033285A1 (fr) 1995-12-07

Family

ID=6519473

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1995/002059 WO1995033285A1 (fr) 1994-05-31 1995-05-30 Fine couche de silicium appliquee sur un substrat de verre

Country Status (2)

Country Link
DE (1) DE4419080A1 (fr)
WO (1) WO1995033285A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2002115830A (ru) * 2002-06-17 2004-01-27 Саито ТАКЕШИ (JP) Элемент солнечной батереи

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63155714A (ja) * 1986-12-19 1988-06-28 Oki Electric Ind Co Ltd 半導体膜の成形方法
JPH01243513A (ja) * 1988-03-25 1989-09-28 Hitachi Ltd 化合物半導体基板
JPH01291420A (ja) * 1988-05-19 1989-11-24 Sony Corp 半導体基板の製造方法
WO1993009564A1 (fr) * 1991-11-06 1993-05-13 Forschungszentrum Jülich GmbH PROCEDE DE PRODUCTION D'UNE HETEROSTRUCTURE EN Si/FeSi¿2?
US5211761A (en) * 1990-06-29 1993-05-18 Sanyo Electric Co., Ltd. Photovoltaic device and manufacturing method thereof
EP0551721A2 (fr) * 1991-12-18 1993-07-21 Amano, Hiroshi Dispositif semi-conducteur à base de nitrure de gallium et méthode pour sa fabrication

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63155714A (ja) * 1986-12-19 1988-06-28 Oki Electric Ind Co Ltd 半導体膜の成形方法
JPH01243513A (ja) * 1988-03-25 1989-09-28 Hitachi Ltd 化合物半導体基板
JPH01291420A (ja) * 1988-05-19 1989-11-24 Sony Corp 半導体基板の製造方法
US5211761A (en) * 1990-06-29 1993-05-18 Sanyo Electric Co., Ltd. Photovoltaic device and manufacturing method thereof
WO1993009564A1 (fr) * 1991-11-06 1993-05-13 Forschungszentrum Jülich GmbH PROCEDE DE PRODUCTION D'UNE HETEROSTRUCTURE EN Si/FeSi¿2?
EP0551721A2 (fr) * 1991-12-18 1993-07-21 Amano, Hiroshi Dispositif semi-conducteur à base de nitrure de gallium et méthode pour sa fabrication

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
K. ISHII ET AL: "Sub-5 um thin film crystalline silicon solar cell on alumina ceramic substrate", JAPANESE JOURNAL OF APPLIED PHYSICS., vol. 32, no. 6A, 1 June 1993 (1993-06-01), TOKYO JP, pages L770 - L773 *
PATENT ABSTRACTS OF JAPAN vol. 12, no. 418 (E - 678) 7 November 1988 (1988-11-07) *
PATENT ABSTRACTS OF JAPAN vol. 13, no. 578 (E - 864) 20 December 1989 (1989-12-20) *
PATENT ABSTRACTS OF JAPAN vol. 14, no. 73 (E - 887) 9 February 1990 (1990-02-09) *
S.H. LEE ET AL.: "Solution growth of silicon an Al-Si coated quartz glass substrates", MATERIALS LETTERS, vol. 19, no. 1/2, March 1994 (1994-03-01), AMSTERDAM NL, pages 1 - 6 *
S.K. DEY: "Electron-beam evaporated silicon films for MIS solar cells", 14TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 7 January 1980 (1980-01-07), SAN DIEGO, USA, pages 1181 - 1185 *
Z. SHI ET AL.: "Investigation of polycrystalline silicon deposition on glass substrates", SOLAR ENERGY MATERIALS, vol. 31, no. 1, October 1993 (1993-10-01), AMSTERDAM NL, pages 51 - 60 *

Also Published As

Publication number Publication date
DE4419080A1 (de) 1995-12-07

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