WO1995025973A1 - Procede de production d'un dispositif guide d'ondes a reflexion - Google Patents

Procede de production d'un dispositif guide d'ondes a reflexion Download PDF

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Publication number
WO1995025973A1
WO1995025973A1 PCT/JP1995/000472 JP9500472W WO9525973A1 WO 1995025973 A1 WO1995025973 A1 WO 1995025973A1 JP 9500472 W JP9500472 W JP 9500472W WO 9525973 A1 WO9525973 A1 WO 9525973A1
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WO
WIPO (PCT)
Prior art keywords
bent
waveguide
pattern
planar pattern
forming
Prior art date
Application number
PCT/JP1995/000472
Other languages
English (en)
Japanese (ja)
Inventor
Akira Mugino
Yoshiyuki Kamata
Hisaharu Yanagawa
Original Assignee
The Furukawa Electric Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Furukawa Electric Co., Ltd. filed Critical The Furukawa Electric Co., Ltd.
Publication of WO1995025973A1 publication Critical patent/WO1995025973A1/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/125—Bends, branchings or intersections

Definitions

  • the present invention relates to a method of manufacturing a reflective waveguide device having a bent waveguide on a predetermined device substrate and a reflective portion at the bent portion by applying a photolithography technology and a dry etching technology.
  • the present invention relates to a method of manufacturing a reflective waveguide element which can realize low reflection loss regardless of the order of the step of forming the bent waveguide and the step of forming the reflection section, and which has a high degree of freedom in the manufacturing process.
  • an element substrate formed by laminating thin layers made of a dielectric or a compound semiconductor has an angle ⁇ .
  • the bend waveguide that bends at 0 ° ⁇ ⁇ 180 ° and a part of the corner of the bend of the bend waveguide are cut off, and the cut surface is used as a reflective surface. And a reflecting portion which is formed.
  • the following method is known as a method for manufacturing such a reflective waveguide device.
  • a paper published in Sep., 1992 discloses a method in which a reflective portion is first formed on an element substrate by applying dry etching technology, and then a bent waveguide is formed.
  • a general manufacturing method of a reflection type waveguide device will be described with reference to the drawings.
  • a substrate 1 a composed of n-type GaAs
  • a buffer layer 1 b composed of n-type GaAs and a lower cladding layer lc composed of n-type GaAs.
  • the core layer 1 d composed of n-type GaAs
  • the upper cladding layer 1 e composed of n-type Al GaAs
  • the cap layer 1 f composed of n-type GaAs
  • the elements stacked in this order by a film forming method such as the CVD method are prepared as the element substrate 1 (Fig. 1).
  • the material constituting the element substrate 1 is, for example, In P / G a I n in addition to the above-mentioned G a As / A 1 G a As system. Asp-based compound semiconductors and the like are sometimes used. Further, a dielectric material such as quartz or LiNbOs formed on the Si substrate by a flame deposition method may be used. Then, as shown in FIG. 2, by applying a photolithography technique on the cap layer 1f, the plane pattern of the resist mask 2a having the same plane pattern as the bent waveguide to be formed is formed. To form In FIG. 2, the planar pattern of the resist mask 2a is a bent portion whose corner is bent at a right angle.
  • the part excluding the part covered with the resist mask 2a is removed.
  • a part of the cladding layer 1e is partially removed by etching to a predetermined depth, and thereafter, the resist mask 2a is removed by a remover or oxygen plasma.
  • a resist mask 2b is formed on the exposed surface of the upper cladding layer 1e and the bent waveguide 3 by applying photolithography technology. I do.
  • the resist mask 2b has a triangular planar pattern, and its side 4a has a bent waveguide.
  • a window 4 is formed so as to obliquely cross the corner 3b of the bent portion 3a of the road 3 at an angle of 45 °. Therefore, from the window 4, the corner 3b in the bent portion 3a and a part of the surface of the upper cladding layer 1e are exposed.
  • the portion exposed from the window 4 is exposed to the buffer layer 1b or the substrate 1a. Etching is removed until the surface is exposed, and then the resist mask 2b is removed.
  • a dry etching technique such as REBE (Reactive Ion Beam Etching) or RIE (Reactive Ion Etching)
  • the depth reaches the exposed surface of the buffer layer 1b or the substrate 1a, and a recess 5 having the same triangular shape as the window 4 is formed in the plane pattern.
  • the corner 3b of the bent portion 3a of the bent waveguide 3 is cut off, and the cut surface 5a is exposed there.
  • the cut surface 5a cuts the optical path axes of the two linear waveguides 3A and 3B constituting the bent waveguide 3 at an angle of 45 ° larger than the critical angle of the propagating light. Therefore, for example, the light propagating through the linear waveguide 3A is reflected by the cut surface 5a to change the optical path, and propagates through the linear waveguide 3B.
  • the cut surface 5a becomes a reflection surface
  • the concave portion 5 having this reflection surface bends and functions as a reflection portion for the waveguide, and the reflection type waveguide element is obtained here.
  • each cut surface of the concave portion 5 with a metal thin film made of, for example, gold, silver, copper, aluminum, or the like, the function of the cut surface 5a as a reflection surface is more reliably achieved. In some cases, it can be demonstrated.
  • a bent waveguide is formed on the device substrate, and then a concave portion (reflection portion) 5 is formed.
  • a concave portion (reflection portion) 5 is first formed on the element substrate, and then a bent waveguide is formed.
  • the optical characteristics of a reflective waveguide device as shown in FIG. 5 are mainly determined by the following factors.
  • the first factor relates to the positional accuracy when the resist mask 2b shown in FIG. 4 is formed by applying one photolithography technique.
  • the resist mask 2b is formed so that one side 4a of the window 4 in FIG. 4 is bent and crosses the bent portion 3a of the waveguide 3 exactly at the position determined at the time of element design. If the positional accuracy is poor, the light propagating through the straight waveguide 3A in FIG. 5 does not reflect off the reflecting surface 5a as designed, and the optical path cannot be changed correctly, resulting in reflection loss. Cause a decline in properties It is.
  • the second factor relates to the perpendicularity of the cut surface (reflective surface) 5a formed in the concave portion 5 in FIG. 5, and when the perpendicularity is poor, the same as in the case of the first factor As described above, the correct optical path change is not realized on the reflection surface 5a, and the reflection loss characteristic is reduced.
  • the constituent materials of the element substrate, the etching gas to be used, etc. should be appropriately selected, and the etching conditions should be optimized. Thereby, the etched surface can be made substantially perpendicular.
  • the third factor is a problem relating to the smoothness of the cut surface 5a of the formed concave portion 5 in FIG.
  • the smoothness that is, the morphology characteristic is reduced
  • the smoothness of the cut surface 5a is inferior, that is, if the cut surface 5a is a rough surface having irregularities, the above light beam is partially reflected by the cut surface 5a. Therefore, the reflection loss characteristic is deteriorated.
  • FIG. 6 is a perspective view of the element substrate on which the resist mask 2b shown in FIG. 4 is formed as viewed from the window 4.
  • FIG. 6 is a perspective view of the element substrate on which the resist mask 2b shown in FIG. 4 is formed as viewed from the window 4.
  • this window 4 is formed by one photolithography technique, the entirety of the already formed bent waveguide 3 and the exposed surface of the upper cladding layer 1e is covered, and a predetermined resist is once applied. After the application, for example, only a portion corresponding to the window 4 to be formed is irradiated with an exposure beam, and the portion is etched and removed.
  • the exposure beam to be irradiated is used.
  • the focus of the system is either the position of the upper surface 3c of the corner 3b to be cut by the subsequent dry etching technique, the position of the lower surface of the corner 3b, that is, the position of the exposed surface of the upper cladding layer 1e, or It has to be adjusted to the position of the depth in the middle. That is, it is absolutely impossible to simultaneously focus the exposure beam on both the surface 3c of the corner 3b and the surface of the upper cladding layer 1e.
  • the focal point is set to the depth of the surface 3c of the corner, and etching is performed.
  • the resist on the corner surface 3c is removed by forming an etching surface with good smoothness.
  • the etched surface formed there tends to be a rough surface 2c having irregularities.
  • the etched surface on the corner surface 3c is roughened, contrary to the above case.
  • the exposed portion of the window 4 is then removed by a drying technique to form a reflecting portion (recess) 5 as shown in FIG. Since the rough surface 2c is formed in a projected state as it is, the reflecting surface 5a does not become a smooth surface as a whole, and its morphological characteristics deteriorate.
  • the thickness of the bent waveguide is applied to the beam irradiation surface during the final dry etching. Since a step corresponding to the step is always formed, the reactive ion beam, for example, tends to be scattered on the irradiation surface under the influence of the step. Then, due to the irregular reflection, the formed reflecting surface is roughened, and the morphological characteristics are inevitably reduced.
  • An object of the present invention is to provide a reflective waveguide having excellent morphological characteristics of the reflective surface of the formed reflective portion regardless of the order of the process of forming the bent waveguide and the process of forming the reflective portion.
  • a method for manufacturing a waveguide element is provided.
  • Another object of the present invention is therefore to provide a method of manufacturing a reflective waveguide device having excellent reflection loss characteristics in a reflective portion.
  • Still another object of the present invention is to provide a method of manufacturing a reflective waveguide device in which the degree of freedom in selecting an etching gas to be used and the degree of freedom in etching conditions are increased, so that the degree of freedom in the manufacturing process is large. That is.
  • a method for manufacturing a reflective waveguide device comprising:
  • an angle ⁇ (where ⁇ is 0 °) is applied to the element substrate.
  • a reflecting portion having a cut surface when a part of a corner of the bent portion is cut as a reflecting surface.
  • Forming an optical path changing portion; the step of forming the optical path changing portion includes: forming a planar pattern of the bent waveguide; having at least a larger area than the planar pattern of the reflecting portion, and similar to the planar pattern of the reflecting portion.
  • a step of forming a resist mask having the same plane pattern as the plane pattern of the reflection portion on the element substrate by performing dry etching after forming the resist mask on the element substrate hereinafter, referred to as B ) Is provided.
  • the step A is a step of forming a bent portion around the waveguide on the prepared element substrate
  • the step B is a step of forming a concave portion functioning as a reflecting portion. is there.
  • the order of the steps A and B is not limited, and the step A may be performed first, and then the step B may be performed, or vice versa. In any case, the object of the present invention can be achieved.
  • a resist mask of a composite planar pattern in which the planar pattern of the bent waveguide formed in the optical path changing portion and the planar pattern of the reflecting portion where one side intersects at the bent portion is overlapped. are formed on the device substrate by photolithography.
  • Figs. 7 and 8 show an example of the composite plane pattern of the resist mask at this time.
  • Each of the combined plane patterns C l and C 2 shown in FIGS. 7 and 8 is a two-line waveguide in which the plane pattern of the bent waveguide to be formed in the optical path changing section is bent at an angle ⁇ .
  • the corresponding flat pattern 6 is formed, and the flat patterns 7, 7 'of the reflection portion located at the bent portion 6a form a triangle, and the long sides 7a, 7'a of the flat pattern 6 correspond to the triangular shape. It has a shape that crosses the bent part 6a diagonally. That is, in these composite plane patterns C 1 (C 2 ), the corners 6 b of the plane pattern 6 overlap with the plane pattern 7 (7,).
  • Each of the long sides 7 a and 7 ′ a of the plane patterns 7 and 7 ′ is a straight line orthogonal to the bisector of the angle of each plane pattern 6, and the side part of the plane pattern 6. It is a straight line that does not cross four times.
  • the long sides 7a and 7'a obliquely cross the bent portion 6a at a portion between the inner bent portion 6c and the outer bent point 6d of the bent portion 6a. If such a mode is not adopted, it is impossible to change the light path of the light incident on one straight waveguide toward the other straight waveguide in the formed bent waveguide. .
  • the composite plane pattern C in FIG. 7 shows a case where the plane pattern 7 corresponding to the reflection section has the same shape as the plane pattern of the reflection section to be formed.
  • synthesis plane pattern C 2 illustrates a case where the area is in larger similar figure than the planar pattern of the reflective portion to be formed flat pattern 7 'corresponding to the reflective portion. This latter mode is preferable because the concave portion can be formed with high precision in the step B described later.
  • the composite plane pattern C! When (C 2 ) is formed and a dry etching technique is applied thereon, the portion where the composite plane pattern (C 2 ) is not formed is removed by etching, and as a result, it should be formed on the element substrate.
  • a lid portion having a planar pattern in which the bent waveguide and the reflection portion are combined is formed.
  • a plane pattern in which the bent waveguide and the reflecting portion are united with accurate alignment is formed by applying the dry etching technique once. In other words, the positional accuracy between the bent waveguide and the reflection section is high at this point.
  • the process B is a process of forming a concave portion to be a reflection portion.
  • a description will be given of a case where the present invention is applied to the bridge portion formed as described above.
  • a resist mask is formed by photolithography at locations other than the part, and then dry etching is applied. As a result, only the portion of the reflecting portion to be formed is removed by etching, and a concave portion having a predetermined depth is formed there.
  • the irradiated reactive ion beam for example, can sequentially etch a flat surface and gradually deepen a concave portion.
  • a resist mask having the composite plane pattern described above is formed on the obtained element substrate.
  • the above-mentioned concave portion is also filled with the mask resist.
  • step A proceed to step A. Since the recesses are filled with a mask resist, the walls of the recesses that become the reflecting surfaces during the formation of the edge are roughened due to the application of the dry etching technology during the process A. There is no.
  • FIG. 1 is a perspective view showing an example of an element substrate used for manufacturing a reflective waveguide element
  • FIG. 2 is an oblique view showing a state in which a bent waveguide resist mask is formed on the element substrate.
  • Perspective view
  • FIG. 3 is a perspective view showing a state in which a bent waveguide is formed
  • FIG. 4 is a resist mask for a reflecting portion formed
  • FIG. 5 is a perspective view showing a reflecting portion formed by dry etching
  • FIG. 6 is a perspective view of the element substrate shown in FIG. 4 when viewed from a window
  • 7 is a plan view showing a combined plane pattern of a resist mask formed by the present invention
  • FIG. 8 is a plan view showing another combined plane pattern of a resist mask
  • FIG. 1 is a perspective view showing an example of an element substrate used for manufacturing a reflective waveguide element
  • FIG. 2 is an oblique view showing a state in which a bent waveguide resist mask is formed on the element substrate.
  • Perspective view is
  • FIG. 10 is a perspective view showing a state in which a resist mask is formed;
  • FIG. 10 is a perspective view showing a state in which a lid portion is formed by applying a dry etching technique;
  • FIG. 12 is a perspective view showing a state in which a resist mask is formed;
  • FIG. 12 is a perspective view of a manufactured reflective waveguide device;
  • FIG. 13 is a resist mask formed on an element substrate for a reflective portion;
  • Fig. 14 is a dry etch
  • FIG. 15 is a perspective view showing a state in which a concave portion is formed by applying a polishing technique;
  • FIG. 15 is a perspective view showing a state in which a resist mask having a combined plane pattern is formed on an element substrate; and
  • an element substrate 1 having a layer structure as shown in FIG. 1 was prepared.
  • a resist is applied to the cap layer 1 f of the element substrate 1 and a photolithography technique is applied thereto, thereby forming a resist having a composite plane pattern as shown in FIG.
  • a mask 8 is formed.
  • the plane pattern of the resist mask 8 is a similar plane pattern in which the plane pattern 7 'corresponding to the reflection section has a larger area than the plane pattern of the reflection section to be formed.
  • the angle ⁇ at the bent part of the plane pattern 6 is 90 °, and the long side of the similar plane pattern 7 ′ is obliquely crossing the bent part at an angle of 45 °. I have.
  • the device substrate is set in an RI ⁇ device, and reactive ions are irradiated from above the plane pattern 8 to etch away a predetermined thickness portion of the upper cladding layer 1e, and then the resist mask 8 is removed. .
  • a ridge-shaped bend in which the plane pattern has the same shape as the plane pattern 6 of the resist mask 8 is formed on the remaining upper clad layer 1e.
  • a ridge portion 10 having a shape in which the waveguide 3 and a ridge-like convex portion 9 having the same shape as the similar planar pattern 7 ′ of the resist mask are combined is formed on the remaining upper clad layer 1e.
  • the upper surface of the lid 10 is the surface of the cap layer 1f itself, and the same horizontal plane is formed between the bent waveguide 3 and the projection 9.
  • a resist is applied on the upper lid portion 10 and the exposed upper cladding layer 1e by photolithography technology, and then the resist is formed as shown in FIG. Be
  • a resist mask 11 is formed in which a window 4 having a pattern corresponding to the planar pattern of the reflective portion is located above the convex portion 9. That is, the surface of the cap layer 1 f is exposed from the window 4 of the resist mask 11.
  • the element substrate shown in FIG. 11 is set in a RIBE apparatus, and the upper surface of the resist mask 11 is irradiated with a reactive ion so that the portion exposed from the window 4 becomes the buffer layer 1 b or the substrate. After etching and removing to a depth where 1a is exposed, the resist mask 11 is removed.
  • the depth reaches the surface of the buffer layer 1 b (or the substrate 1 a) at a predetermined position of the convex portion 9, and the bent portion 3 of the bent waveguide 3 is formed.
  • a concave portion 5 formed by cutting off a corner in a is formed.
  • the wall surface 5a of the concave portion 5 constitutes a reflecting surface of the bent waveguide 3.
  • the bent waveguide 3 and the concave portion (reflecting portion) 5 having the reflecting surface 5a are joined together to form an optical path changing portion. Is formed.
  • the concave portion 5 is formed by applying a dry etching technique to a flat surface having no step, the beam focus shift and irregular reflection due to the step do not occur. Therefore, the smoothness of the etched surface, that is, the wall surface (reflection surface) 5a becomes excellent.
  • an element substrate 1 having a layer structure as shown in FIG. 1 is prepared. After applying a resist to the cap layer 1 f of the element substrate 1 and applying photolithography technology, the planar pattern becomes a square as shown in FIG. 13. A resist mask 12 having a window 4 is formed.
  • the device substrate is set in, for example, a RIBE apparatus, and a beam of reactive ions is irradiated from above the resist mask 12 so that the portion exposed from the window 4 is covered with the buffer layer lb or the substrate la. O Remove the resist mask 12 after etching to the depth where
  • the depth reaches the surface of the buffer layer 1b (or the substrate 1a) at a predetermined location of the element substrate 1, and the bent waveguide to be formed is bent.
  • a concave portion 5 is formed in which a corner to be cut from the curved portion is cut.
  • each of the etched surfaces of the concave portion 5, that is, each of the wall surfaces is formed by sequentially dry-etching a flat surface without any step, so that the beam defocus and irregular reflection occur during the dry etching process.
  • the surface is formed as a surface having excellent smoothness.
  • a mask resist is applied to the entire surface of the element substrate shown in FIG. As shown in FIG. 5, a planar pattern of the bent waveguide to be formed and a similar planar pattern overlapping the bent portion and having a larger area and a similar shape than the planar pattern of the recess 5 described above.
  • the bending angle of the bending portion in each plane pattern corresponding to the two linear waveguides is set to 45 °.
  • the element substrate is set in, for example, a RIBE apparatus, and the resist mask is irradiated with a beam of reactive ions from above the resist mask 13 until a predetermined thickness of the upper cladding layer 1 e is removed.
  • the portions where the resist mask 13 is not formed are removed by etching, and finally the resist mask 13 is removed.
  • a ridge-shaped bent waveguide 3 was formed on the remaining upper cladding layer 1e, and at the same time, was exposed again by removing the resist mask.
  • An optical path changing portion including a reflecting portion composed of the recessed portion 5 and a frame portion surrounding and projecting in a dike shape around the recessed portion 5 is formed.
  • the already formed reflecting surface 5a is filled with the resist Because it is covered with a mask, the smooth state when initially formed is maintained.
  • a combined pattern in which a planar pattern of a bent waveguide to be formed and a planar pattern of a reflective portion to be formed in the bent portion or a pattern similar thereto is combined. Since a flat pattern is formed on the element substrate using photolithography technology and dry etching technology is applied, the dry etching technology can be used regardless of whether the bent waveguide formation process or the reflection portion formation process is performed first. Is applied to a flat surface with no steps, and as a result, the morphological characteristics of the etched surface (reflection surface) at the bent portion become excellent.
  • the reflection type waveguide element manufactured by the method of the present invention has good reflection loss characteristics at the reflection portion, and its propagation characteristics are improved.
  • the method of the present invention it is easy to select the type of the etching gas and the optimum etching conditions at the time of dry etching, and the degree of freedom of the manufacturing process is increased.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

La présente invention concerne un dispositif guide d'ondes à réflexion comportant un guide d'ondes coudé et un élément réfléchissant au niveau du coude. Le procédé de production du guide d'ondes comporte les étapes suivantes: formation, sur un substrat du dispositif, d'un masque de résine photosensible à configuration plane combinée, et dans lequel la configuration plane du guide d'onde coudé et une autre configuration plane similaire à celle de l'élément réfléchissant mais de plus grande surface, se chevauchent partiellement au niveau du coude de la configuration plane du guide d'ondes coudé; exécution par gravure à sec d'une partie à nervures respectant la même configuration plane que la configuration plane combinée; réalisation d'un masque de résine photosensible sur le substrat du dispositif, selon la même configuration plane que celle de la partie réfléchissante; puis, par gravure à sec, réalisation sur le substrat du dispositif, d'un évidement ayant la même configuration plane que la partie réfléchissante.
PCT/JP1995/000472 1994-03-22 1995-03-17 Procede de production d'un dispositif guide d'ondes a reflexion WO1995025973A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7666194A JPH07261043A (ja) 1994-03-22 1994-03-22 コーナー導波路素子の形成方法
JP6/76661 1994-03-22

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WO1995025973A1 true WO1995025973A1 (fr) 1995-09-28

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KR100335373B1 (ko) * 1999-11-25 2002-05-06 오길록 격자도움 수직결합형 광필터 및 그 제조방법
JP4501949B2 (ja) * 2002-09-20 2010-07-14 凸版印刷株式会社 光導波路の製造方法
JP2004280009A (ja) * 2003-03-19 2004-10-07 Toppan Printing Co Ltd 光導波路およびその製造方法
KR100508336B1 (ko) * 2003-05-07 2005-08-17 광주과학기술원 반사 거울이 집적화된 광도파로의 제작방법 및 이를이용한 광연결구조

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6256903A (ja) * 1985-09-06 1987-03-12 Omron Tateisi Electronics Co 反射形分岐光導波路
JPH047508A (ja) * 1990-04-25 1992-01-10 Oki Electric Ind Co Ltd 反射型光曲げ導波路の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6256903A (ja) * 1985-09-06 1987-03-12 Omron Tateisi Electronics Co 反射形分岐光導波路
JPH047508A (ja) * 1990-04-25 1992-01-10 Oki Electric Ind Co Ltd 反射型光曲げ導波路の製造方法

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JPH07261043A (ja) 1995-10-13

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