WO1994017551A1 - Soudage par diffusion a une temperature intermediaire - Google Patents

Soudage par diffusion a une temperature intermediaire Download PDF

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Publication number
WO1994017551A1
WO1994017551A1 PCT/US1994/000364 US9400364W WO9417551A1 WO 1994017551 A1 WO1994017551 A1 WO 1994017551A1 US 9400364 W US9400364 W US 9400364W WO 9417551 A1 WO9417551 A1 WO 9417551A1
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WO
WIPO (PCT)
Prior art keywords
piece
nickel
layer
gold
temperature
Prior art date
Application number
PCT/US1994/000364
Other languages
English (en)
Inventor
Ronald L. Williams
Joseph B. Tyra
Original Assignee
Hughes Aircraft Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Company filed Critical Hughes Aircraft Company
Priority to JP6517068A priority Critical patent/JPH07506773A/ja
Publication of WO1994017551A1 publication Critical patent/WO1994017551A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023—Thermo-compression bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Definitions

  • This invention relates to the Joining and bonding of articles, and, in particular, to a diffusion welding process.
  • soldering a pure metal or alloy having a low melting temperature is provided at the locations to be joined.
  • Lead-tin, lead-indium, and indium solders are widely used.
  • Lead-tin solder is the familiar solder available in hardware stores, and the other solders are made for more specialized applications.
  • the solder and surrounding regions to be joined are heated to a temperature sufficient to melt the solder and cause it to flow over the surfaces to be joined. The heating is removed, and the parts are allowed to cool. As the parts cool, the solder solidifies to Join the parts together. Soldering is widely used, but has drawbacks in some applications.
  • Soldering is expected to remain a viable joining technique for many applications. In others, these drawbacks cause the technique to be less than satisfactory. There is a need for an improved joining technique that can replace soldering in such applications.
  • the present invention fulfills this need, and further provides related advantages.
  • the present invention provides a joining technique for bonding two pieces together. It is particularly of interest in the microelectronics industry, but has broader applicability.
  • the process is entirely solid state, with neither the pieces nor the bonding materials being melted during the process. No surface etching or flux is required in the bonding process.
  • Process control requires only temperature control, which can normally be accomplished quite accurately.
  • the preferred maximum process temperature is within the acceptable heating range for many microelectronic devices, which, if heated to too high a temperature, can themselves be damaged.
  • the final bond is much stronger in tension and creep than that achieved by soldering with conventional low-temperature solders that are melted during the bonding process.
  • the approach of the invention does require the ability to press together the surfaces being bonded, limiting its applicability to situations where pressing is possible and permitted.
  • a method for joining two pieces together includes the step of providing a first bonding surface on a first piece to be bonded.
  • the first bonding surface comprises a first region of a first material, and a first layer of a second material overlying the first region of the first material and having a different composition than the first material.
  • the second material forms an adherent coating on the first material and resists oxidation at a temperature of from about 125C to about 250C.
  • the second material has a negligible solid solubility in the first material at a temperature of less than about 125C and an increasing, finite solid solubility in the first material at a temperature of more than about 125C.
  • the second material achieves sufficient interdiffusion into the first material at a temperature of from about 125C to about 250C to weld the first material and the second material together.
  • the method further includes providing a second bonding surface on a second piece to be bonded.
  • the second bonding surface is made of a third material that resists oxidation at a temperature of from about 125C to about 250C.
  • the third material achieves sufficient interdiffusion into the second material at a temperature of from about 125C to about 250C to weld the second material and the third material together.
  • the two bonding surfaces are pressed together at a temperature of from about 125C to about 250C, preferably about 200C, for a time sufficient to permit the first and second bonding surfaces to interdiffuse.
  • the second material and the third material are preferably, but not necessarily, the same material.
  • the pressing time is desirably no more than about 1 hour.
  • nickel as the first material
  • gold as the second and third materials.
  • nickel may be the first material and tin the second and third materials
  • germanium may be the first material and tin the second and third materials
  • beryllium may be the first material and tin the second and third materials
  • gold may be the first material and platinum the second and third materials.
  • a method for joining two pieces together comprises the steps of providing a gold-coated nickel bonding surface on a first piece to be bonded, providing a gold bonding surface on a second piece to be bonded, and pressing the two bonding surfaces together at a temperature of from about 125C to about 250C for a time sufficient to permit the bonding surfaces to interdiffuse.
  • the preferred bonding temperature is about 200C.
  • the temperature of bonding must be at least about 125C because of the near-zero solubility of the gold or other second material in the nickel or other first material at lower temperatures. Interdiffusion cannot occur in the absence of solubility. Experiments have demonstrated that the full interdiffusional and diffusion welding effects are attained at temperatures of no more than 250C, and it is therefore not necessary to conduct the diffusion welding at higher temperatures. Moreover, higher temperatures lead to increased thermal and residual stresses in the bond and in the pieces being bonded upon the completion of the process, and are therefore to be avoided. Where the present invention is used in microelectronic device bonding applications, the presently preferred use, exposure of the device to temperatures above 250C can cause degradation in the microelectronic devices through enhanced diffusion. Thus, the diffusional welding range of the invention is an intermediate temperature range of from about 125C to about 250C. If, however, any of the materials melts at a temperature of less than 250C, the maximum temperature during diffusion welding should not exceed that melting temperature.
  • a method for joining two pieces together comprises the steps of providing a nickel layer on a first piece to be bonded and coating the nickel layer of the first piece with a gold layer in a thickness such that the amount of gold present is less than about 0.5 percent of the amount of nickel present.
  • a second piece is treated similarly, by providing a nickel layer on a second piece to be bonded and coating the nickel layer of the second piece with a gold layer in a thickness such that the amount of gold is less than about 0.5 percent of the amount of nickel.
  • the gold layers of the first piece and the second piece are placed into contact.
  • the first piece and the second piece are pressed together at a temperature of from about 125C to about 250C for a time sufficient to permit the first piece and the second piece to interdiffuse.
  • the preferred embodiment of the present approach is a fully solid-state diffusional bonding or welding approach that is operable due to the ability of a thin gold layer of gold or other second material to protect the nickel or other first material from oxidation, and to interdiffuse with nickel or other first material in the temperature range of about 125C to about 250C.
  • Nickel will not pressure bond to nickel at such low temperatures and with moderate pressures, because nickel normally forms a nickel oxide at its surface that serves as a diffusion barrier to the interdiffusion, and because of the low self-diffusion rate of nickel at that temperature.
  • the deposition of a thin layer of gold onto the surface of the nickel protects the nickel against oxidation, and also produces an increased interdiffusion rate due to the characteristics of the nickel-gold phase relationships.
  • At least one of the surfaces to be bonded must include a thin layer of gold deposited upon nickel.
  • the nickel can be the material of construction of the underlying structure, or can be in the form of a nickel layer deposited over the underlying structure.
  • the other surface to be bonded must have gold at the surface, to interdiffuse with the nickel-gold structure on the mating surface. It may also be in the form of a thin gold layer on nickel.
  • the bond produced by this approach is accomplished at moderate temperature and applied bonding pressures, and without the use of etches or fluxes.
  • the approach of the invention can be used where the structures to be bonded permit these bonding conditions.
  • the final bond is quite strong in tension and creep, producing superior mechanical properties to those of solder joints made with low-temperature solders.
  • Figure 1 is a process flow diagram for practicing a preferred embodiment of the invention
  • Figure 2 is a side elevational view of a preferred bonding configuration, just prior to the commencement of bonding;
  • Figure 3 is a schematic elevational view of a bonded joint, with compositions indicated.
  • Figure 1 illustrates the preferred method steps of the invention
  • Figures 2-3 show, for the preferred embodiment, the structure of the pieces being bonded, both before and after bonding.
  • a nickel layer 40 is first applied to a first piece 42, numeral 20.
  • nickel includes both pure nickel and alloys of nickel containing other alloying elements. Alloys are acceptable, as long as no embrittling phases are formed during interdiffusion. For example, there should little or no lead present in the nickel alloy, as lead and gold form a brittle phase upon interdiffusion.
  • the first piece 42 may itself be made of nickel, and then the upper portion of the nickel piece is considered to be the layer 40.
  • the nickel layer 40 is coated with a gold layer 44, numeral 22.
  • the layer 44 can be pure gold, or an alloy of gold that does not form an embrittling phase during interdiffusion with the nickel layer 40.
  • the nickel layer and the gold layer may be of various thicknesses. However, the total amount of gold in the gold layer 44 preferably does not exceed about about 0.5 percent of the total amount of nickel in the nickel layer 40. If the amount of gold exceeds that value, the net composition of the interdiffused nickel and gold layer resulting from subsequent processing is no longer in a solid solution region of the phase diagram. Instead, the net composition lies in a mi ⁇ cibility gap region of the phase diagram. This relation is preferred, and not an absolute requirement. A partial interdiffusion or interdiffusion to a composition within the miscibility gap is acceptable, particularly if accomplished over a relatively large bonding surface area to ensure that there is a sufficiently large area over which any applied forces during service are distributed.
  • the nickel layer 40 was pure nickel and was applied by electroplating using the first piece 42 as the plating substrate.
  • the plated nickel layer 40 was about 0.004 inches thick.
  • the plated first piece 42 was placed into a vacuum deposition apparatus, and the surface of the nickel layer 40 was cleaned by ion cleaning to remove contaminants and nickel oxide.
  • the gold layer 44 was pure gold and was applied by in-situ electron beam deposition following the deposition of the nickel layer 40.
  • the gold layer 44 was about 4000 Angstroms (400 nanometers) thick. The vacuum was not broken between ion cleaning and gold deposition, so that the surface of the nickel layer 40 could not re-contaminate or re-oxidize prior to deposition of the gold layer 44.
  • a second piece 46 was provided with a nickel layer 48, see numeral 24 of Figure 1, and a gold layer 50, see numeral 26 of Figure 1, using the same techniques just described for the first piece 42. 5 However, this approach need not be followed.
  • the bonding method works well if no nickel layer is provided on the second piece 46, as long as there is a gold layer 50 present on the second piece, or the second piece is entirely gold. In microelectronics, ° contacts are sometimes made entirely of gold or with a gold layer, and the present method is operable with such structures.
  • the first piece 42 and the second piece 46 are placed in contact, with the gold layers 44 and 50 in a facing relation, numeral 28.
  • Figure 2 illustrates this arrangement, just before the layers 44 and 50 are contacted together.
  • This contacting of the 0 pieces 42 and 46 need not occur in vacuum or immediately after the pieces are removed from a vacuum, as the gold layers 44 and 50 do not rapidly oxidize or form other types of diffusion barriers. It is necessary, however, to ensure that the facing 5 surfaces of the layers 44 and 50 are not contaminated with contaminants such as dirt or grease.
  • the first piece 42 and the second piece 46 are heated and pressed together at elevated temperature, numeral 30.
  • the temperature must be at least about ° 125C, because the gold and nickel do not significantly interdiffuse below that temperature. Thus, there is no substantial interdiffusion when the nickel/gold coated pieces are stored at ambient temperature prior to the interdiffusion process.
  • the 5 temperature should not be above about 250C, because of the increasing thermal and residual stresses experienced when higher temperatures are used, the attainment of the full effect at lower temperatures, and possible damage to the articles being bonded together.
  • the pieces should be pressed together with a force sufficient to attain reasonably complete interfacial contact at the surfaces of the layers 44 and 50, promoting a strong bond. It is possible to magnify any applied forces at the bond line by geometrical techniques such as using bumps to concentrate the applied forces in a small area for bonding purposes. The effective applied force will therefore depend upon the geometry of the bonded region.
  • the present bonding phenomenon is primarily a result of the application of a sufficiently high temperature, and pressure does not play a direct role except to promote interfacial contact. The applied pressure is therefore not a primary variable to be considered in the diffusion welding operation.
  • the time required to bond the pieces together is dependent upon the bonding temperature. At a preferred bonding temperature of 200C, the bonding was achieved in 60 minutes with an applied pressure of about 15,000 pounds per square inch. Other studies indicate that shorter times, as on the order of about 5-10 minutes, are also operable. Overly long diffusional treatments, such as a bonding time of 1 hour or more should not be used, inasmuch as diffusional damage to the pieces being bonded may result.
  • Figure 3 depicts the compositional profile in the neighborhood of the bonded region after a degree of Interdiffusion.
  • the layers 40, 44, 48, and 50 whose boundaries are initially well defined, become less well defined as gold from the layer 44 interdiffuses with gold from the layer 50, gold from the layer 50 interdiffuses with nickel from the layer 48, and gold from the layer 44 interdiffuses with nickel from the layer 40.
  • Figure 3 shows an indication of where the layers were originally physically located by dashed lines, but the layers are no longer of their original compositions.
  • the nickel layers 40 and 48 become a mixture of predominantly nickel and gold, while the gold layers 44 and 50 have a substantial nickel content.
  • the gold and nickel interdiffuse so that the composition becomes more nearly uniform across what was previously the layers 40, 44, 50, and 48, to complete the bonding operation.
  • the first piece 42 had a nickel layer 40 about 0.004 inches thick and a gold layer 44 about 4000 Angstroms thick.
  • the second piece 46 was entirely gold. Bonding was achieved at a temperature of about 200C for 60 minutes, with an applied pressure of about 15,000 pounds per square inch. After bonding, when an attempt was made to remove the second piece 46 from the bonded joint, failure occurred in the nickel rather than at the Joint. In other measurements, the nickel/gold alloy was found to have a tensile strength in excess of 18,000 psi (pounds per square inch). The nickel/gold alloy had a predicted creep strength of over 9000 psi.
  • a typical lead-tin solder has a tensile strength of about 5500 psi and a creep strength of 300 psi.
  • the bond of the present invention is considerably stronger than the conventional solder bond, probably because of the much higher melting points of its constituents.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Laminated Bodies (AREA)
  • Die Bonding (AREA)

Abstract

Deux pièces (42, 46) sont réunies par l'application d'une couche de soudage composé d'or (44), recouvrant une couche de nickel (40), sur une première pièce (42) à souder, et l'application d'une couche de soudage composé d'or (50) sur une seconde pièce (46) à souder. La couche d'or (50) de la seconde pièce (46) peut éventuellement recouvrir une couche de nickel (48). Les couches d'or (44, 50) sont placées face-à-face et sont comprimées à une température comprise entre environ 125 °C et environ 250 °C, suffisamment longtemps pour permettre l'interdiffusion des couches (40, 44, 50, 46).
PCT/US1994/000364 1993-01-19 1994-01-10 Soudage par diffusion a une temperature intermediaire WO1994017551A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6517068A JPH07506773A (ja) 1993-01-19 1994-01-10 中間温度拡散接合

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US621293A 1993-01-19 1993-01-19
US006,212 1993-01-19

Publications (1)

Publication Number Publication Date
WO1994017551A1 true WO1994017551A1 (fr) 1994-08-04

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JP (1) JPH07506773A (fr)
WO (1) WO1994017551A1 (fr)

Cited By (6)

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DE19546569A1 (de) * 1994-12-16 1996-06-27 Hitachi Ltd Lötverbindungsverfahren und nach diesem Verfahren hergestellte Leistungshalbleitervorrichtung
EP0898307A1 (fr) * 1997-08-19 1999-02-24 Commissariat A L'energie Atomique Procédé de traitement pour le collage moléculaire et le décollage de deux structures
EP0977252A1 (fr) * 1998-07-30 2000-02-02 Commissariat A L'energie Atomique Transfert sélectif d'éléments d'un support vers un autre support
WO2013029656A1 (fr) * 2011-08-30 2013-03-07 Ev Group E. Thallner Gmbh Procédé de liaison permanente de tranches par une couche de liaison au moyen d'une diffusion en phase solide ou d'une transformation de phase
WO2017032771A1 (fr) * 2015-08-25 2017-03-02 Osram Opto Semiconductors Gmbh Composant et procédé de fabrication d'un composant
EP4016613A4 (fr) * 2019-08-30 2023-07-26 Huawei Technologies Co., Ltd. Ensemble électronique et appareil électronique

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EP2597671A3 (fr) * 2010-03-31 2013-09-25 EV Group E. Thallner GmbH Procédé de liaison permanente de deux surfaces métalliques
AT525618B1 (de) * 2012-09-28 2023-07-15 Ev Group E Thallner Gmbh Verfahren zum Beschichten und Bonden von Substraten
JP6194594B2 (ja) * 2013-02-26 2017-09-13 大日本印刷株式会社 金属基板の接合方法および金属積層体
JP6522952B2 (ja) * 2014-05-21 2019-05-29 株式会社東芝 接合体およびその製造方法
JP5948533B2 (ja) * 2014-06-19 2016-07-06 株式会社ムサシノエンジニアリング 原子拡散接合方法

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Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19546569A1 (de) * 1994-12-16 1996-06-27 Hitachi Ltd Lötverbindungsverfahren und nach diesem Verfahren hergestellte Leistungshalbleitervorrichtung
DE19546569C2 (de) * 1994-12-16 2003-03-27 Hitachi Ltd Lötverbindungsverfahren und Verwendung dieses Verfahrens zur Herstellung eines Leistungshalbleiters
US6429094B1 (en) 1997-08-19 2002-08-06 Commissariat A L'energie Atomique Treatment process for molecular bonding and unbonding of two structures
EP0898307A1 (fr) * 1997-08-19 1999-02-24 Commissariat A L'energie Atomique Procédé de traitement pour le collage moléculaire et le décollage de deux structures
FR2767604A1 (fr) * 1997-08-19 1999-02-26 Commissariat Energie Atomique Procede de traitement pour le collage moleculaire et le decollage de deux structures
EP0977252A1 (fr) * 1998-07-30 2000-02-02 Commissariat A L'energie Atomique Transfert sélectif d'éléments d'un support vers un autre support
US6204079B1 (en) 1998-07-30 2001-03-20 Commissariat A L'energie Atomique Selective transfer of elements from one support to another support
FR2781925A1 (fr) * 1998-07-30 2000-02-04 Commissariat Energie Atomique Transfert selectif d'elements d'un support vers un autre support
WO2013029656A1 (fr) * 2011-08-30 2013-03-07 Ev Group E. Thallner Gmbh Procédé de liaison permanente de tranches par une couche de liaison au moyen d'une diffusion en phase solide ou d'une transformation de phase
EP3043378A3 (fr) * 2011-08-30 2016-10-19 EV Group E. Thallner GmbH Procédé d'assemblage permanent de tranches par diffusion à l'état solide ou transition de phase utilisant une couche fonctionelle
KR101927559B1 (ko) 2011-08-30 2018-12-10 에베 그룹 에. 탈너 게엠베하 고체 상태 확산 또는 상 변환에 의해 연결 층에 의한 웨이퍼의 영구 접착을 위한 방법
US10163681B2 (en) 2011-08-30 2018-12-25 Ev Group E. Thallner Gmbh Method for permanently bonding wafers by a connecting layer by means of solid state diffusion or phase transformation
WO2017032771A1 (fr) * 2015-08-25 2017-03-02 Osram Opto Semiconductors Gmbh Composant et procédé de fabrication d'un composant
US10204880B2 (en) 2015-08-25 2019-02-12 Osram Opto Semiconductors Gmbh Device and method for producing a device
EP4016613A4 (fr) * 2019-08-30 2023-07-26 Huawei Technologies Co., Ltd. Ensemble électronique et appareil électronique

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