WO1992015101A1 - Capteur en metal du groupe du platine pour hautes temperatures - Google Patents

Capteur en metal du groupe du platine pour hautes temperatures Download PDF

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Publication number
WO1992015101A1
WO1992015101A1 PCT/EP1992/000223 EP9200223W WO9215101A1 WO 1992015101 A1 WO1992015101 A1 WO 1992015101A1 EP 9200223 W EP9200223 W EP 9200223W WO 9215101 A1 WO9215101 A1 WO 9215101A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
temperature sensor
platinum
sensor according
thick
Prior art date
Application number
PCT/EP1992/000223
Other languages
German (de)
English (en)
Inventor
Josef Gerblinger
Hans Meixner
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Priority to DE59209347T priority Critical patent/DE59209347D1/de
Priority to JP4503511A priority patent/JPH06507521A/ja
Priority to EP92903587A priority patent/EP0571412B1/fr
Priority to US08/087,811 priority patent/US5430428A/en
Publication of WO1992015101A1 publication Critical patent/WO1992015101A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/021—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient formed as one or more layers or coatings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
    • G01K7/183—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer characterised by the use of the resistive element

Definitions

  • the present invention relates to a fast platinum metal temperature sensor for high-temperature sensors, in particular for use in automotive exhaust gas monitoring technology.
  • thermocouples made of platinum / platinum-rhodium or nickel / chrome-nickel have been used for operating temperatures up to 1000oC.
  • these elements have two major disadvantages. On the one hand, they cannot be integrated on hybrid components and, on the other hand, they have relatively long response times to temperature changes in their environment. So far, screen-printed platinum-metal temperature sensors or other thin-film technologies (PVD or CVD processes) can only be used up to a maximum of 850oC, since at this temperature at the latest the platinum metals form both stable and volatile oxides, which lead to a resistance drift of the temperature sensor.
  • a platinum metal temperature sensor provided with an aluminum oxide protective layer is known for example from GB 2 171 253.
  • a platinum resistance film with a silicon nitride protective layer is known from 3P-A 63269502.
  • a platinum film resistor with a titanium dioxide / silicon dioxide double layer can be found in DE-OS 36 03 757.
  • a disadvantage of the known sensors is that an oxidation of the platinum is observed at temperatures above 850 ° C despite passivation and protective layers, which leads to the impermissible resistance drift of the temperature sensor.
  • the oxidation is particularly due to cracks in the passivation layers, which occur when cooling from high temperatures. up to room temperature due to different thermal expansion coefficients of the materials used for the sensor.
  • Glass layers to be applied as a passivation layer in thick-film technology also form cracks during cooling, which allow oxygen to enter and thus oxidize the platinum.
  • the present invention has for its object one.
  • This object is achieved according to the invention by a fast platinum metal temperature sensor with the features of claim 1.
  • a platinum resistance layer is usually applied in the form of meanders in thick or thin layer processes to the substrates usually used in microsystem technology (for example made of Al 2 O 3 ).
  • the oxidation of the platinum metals is prevented by a passivation, which is applied to the surface of the temperature sensor.
  • the passivation layer is produced according to the invention as a thin double layer (typical layer thicknesses in the range from 1 to 15 ⁇ m).
  • metal nitride e.g. Si 3 N 4
  • Si 3 N 4 metal nitride
  • Carbon C metal carbide
  • oxygen 0 metal oxide
  • any glass can be considered for the glass layer, for example silicate glasses, which are commercially available as pastes for thick-film technology.
  • the layer sequence of ceramic and glass layers is interchangeable, so that the glass layer or the ceramic layer can be applied directly over the platinum resistance layer.
  • the glass layer serves as a buffer layer which softens at higher temperatures and thus reduces or prevents the formation of tensions between the ceramic layer and the layers below. Due to the non-occurring stresses, no cracks are observed in the ceramic layer despite the high temperature interval when the temperature sensor is operated from room temperature to 1000 ° C.
  • the glass layer serves as a sealing layer, which also softens at higher temperatures and is able to penetrate into any cracks in the ceramic layer underneath, thereby sealing it. Even when it cools down, the glass adheres to the cracks and cracks in the ceramic layer and ensures an oxygen-tight passivation through this double layer. This prevents oxygen from passing through the passivation to the surface of the platinum metal and from forming a metal oxide layer between the platinum metal and the passivation.
  • care must also be taken to ensure that no reactions occur between the passivation and the platinum metal used as a temperature sensor, even at high operating temperatures of up to 1000 * 0. The latter would also lead to irreparable resistance drifts in the temperature sensor.
  • the ceramic layer can be produced using both thick-film and thin-film technology.
  • a ceramic green sheet can first be produced and then baked, or the ceramic can be produced directly by a plasma or gas phase deposition process, for example by PVD or CVD processes. Sputtering and vapor deposition processes are also suitable.
  • Typical layer thicknesses for the ceramic layer are between 1 and 10 ⁇ m, while the layer thickness of the glass layer is chosen between 5 and 10 ⁇ m.
  • a higher layer thickness may be required due to an uneven substrate surface, usually a ceramic, in order to achieve a uniform and dense
  • the ceramic layer is made of a metal / non-metal compound that shows no interaction with oxygen.
  • the ceramic layer is made of a metal / non-metal compound that is impermeable to oxygen.
  • the first (lower) passivation layer is made of a metal / non-metal compound that shows no interaction with platinum metals.
  • a fast temperature sensor is available for the first time, which is suitable for temperatures up to 1000 ° C is particularly suitable for the interval from 850 to 1000 ° C, and which shows no resistance drift even when used in an oxygen-containing atmosphere and therefore provides reliable and reliable measured values even with a long service life.
  • This makes it possible for the first time to measure exhaust gas temperatures of internal combustion engines immediately behind the combustion chamber in order to optimally control other gas sensors with the measurement value obtained and thus to enable optimal combustion with maximum energy utilization with minimal pollutant emissions.
  • Figure 1 shows the arrangement of a platinum resistance layer on a substrate during
  • Figure 2 shows a schematic section through a finished temperature sensor.
  • FIG. 1 A platinum resistance layer Pt with a thickness of, for example, 5 ⁇ m is applied to a substrate S. At least partially, the platinum structure Pt has the shape of meanders Gur, which form the actual measuring resistor.
  • FIG. 2 shows a section through a finished temperature sensor in the area of the meander structure Gur.
  • the platinum conductor tracks Pt applied to the substrate S are covered by a double layer DS as a passivation layer.
  • the lower layer US can be a glass layer and the upper layer OS can be a ceramic layer or vice versa.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)

Abstract

Pour un capteur de température rapide en métal du groupe du platine, il est proposé de déposer sur la couche résistive de platine, pour éviter l'oxydation, une double couche comme couche de passivation. La double couche consiste en une couche de céramique et une couche de verre et empêche, même à des températures élevées atteignant 1000 °C, une entrée d'oxygène dans la couche résistive de platine.
PCT/EP1992/000223 1991-02-15 1992-02-03 Capteur en metal du groupe du platine pour hautes temperatures WO1992015101A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE59209347T DE59209347D1 (de) 1991-02-15 1992-02-03 Hochtemperatur-platinmetall-temperatursensor
JP4503511A JPH06507521A (ja) 1991-02-15 1992-02-03 高温センサ技術のための高速白金族金属温度センサ用装置
EP92903587A EP0571412B1 (fr) 1991-02-15 1992-02-03 Capteur en metal du groupe du platine pour hautes temperatures
US08/087,811 US5430428A (en) 1991-02-15 1992-02-03 High-temperature sensor made of metal of the platinum group

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP91102184.8 1991-02-15
EP91102184 1991-02-15

Publications (1)

Publication Number Publication Date
WO1992015101A1 true WO1992015101A1 (fr) 1992-09-03

Family

ID=8206410

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1992/000223 WO1992015101A1 (fr) 1991-02-15 1992-02-03 Capteur en metal du groupe du platine pour hautes temperatures

Country Status (5)

Country Link
US (1) US5430428A (fr)
EP (1) EP0571412B1 (fr)
JP (1) JPH06507521A (fr)
DE (1) DE59209347D1 (fr)
WO (1) WO1992015101A1 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4300084A1 (de) * 1993-01-06 1994-07-07 Heraeus Sensor Gmbh Widerstandsthermometer mit einem Meßwiderstand
EP0905494A2 (fr) * 1997-09-26 1999-03-31 SIEMENS MATSUSHITA COMPONENTS GmbH & CO. KG Capteur pour hautes températures
EP0973020A1 (fr) * 1998-07-16 2000-01-19 Heraeus Electro-Nite International N.V. Capteur de température électrique comprenant une multi-couche
WO2000042404A1 (fr) * 1999-01-18 2000-07-20 Slovak Technical University Procede servant a stabiliser la resistance electrique de fils de platine
US6617956B1 (en) 1999-01-14 2003-09-09 Sensotherm Temperatursensorik Gmbh Platinum temperature sensor and method for producing same
US6653926B1 (en) 1999-01-14 2003-11-25 Sensotherm Temperatursensorik Gmbh Platinum temperature sensor and its method of production
EP1384561A1 (fr) * 2002-07-26 2004-01-28 Günther GmbH & Co., Metallverarbeitung Capteur de température et dispositif de chauffage pour systèmes à canaux chauds
WO2009016013A1 (fr) * 2007-07-30 2009-02-05 Innovative Sensor Technology Ist Ag Dispositif destiné à la détermination et/ou au contrôle d'une grandeur de processus
DE102007046900B4 (de) * 2007-09-28 2011-07-21 Heraeus Sensor Technology GmbH, 63450 Hochtemperatursensor und ein Verfahren zu dessen Herstellung
DE102011051845B3 (de) * 2011-07-14 2012-10-25 Heraeus Sensor Technology Gmbh Messwiderstand mit Schutzrahmen

Families Citing this family (25)

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Publication number Priority date Publication date Assignee Title
JP3175890B2 (ja) * 1993-12-27 2001-06-11 日本碍子株式会社 温度センサ
DE19540194C1 (de) * 1995-10-30 1997-02-20 Heraeus Sensor Gmbh Widerstandsthermometer aus einem Metall der Platingruppe
JPH09318594A (ja) * 1996-03-25 1997-12-12 Ngk Insulators Ltd ガスセンサおよび被測定ガス中の特定成分量の測定方法
JPH1140403A (ja) * 1997-07-22 1999-02-12 Murata Mfg Co Ltd 温度センサ素子
US7109842B1 (en) * 1998-12-07 2006-09-19 Honeywell International Inc. Robust fluid flow and property microsensor made of optimal material
US6794981B2 (en) 1998-12-07 2004-09-21 Honeywell International Inc. Integratable-fluid flow and property microsensor assembly
DE19910444C2 (de) * 1999-03-10 2001-01-25 Bosch Gmbh Robert Temperaturfühler
US6354736B1 (en) * 1999-03-24 2002-03-12 Honeywell International Inc. Wide temperature range RTD
US6418784B1 (en) 1999-10-08 2002-07-16 Ford Global Technologies, Inc. Combined combustible gas sensor and temperature detector
DE19957991C2 (de) * 1999-12-02 2002-01-31 Daimler Chrysler Ag Anordnung einer Heizschicht für einen Hochtemperaturgassensor
DE10029186C2 (de) * 2000-06-19 2002-04-25 Heraeus Electro Nite Int Temperatur-Messvorrichtung
DE10065723A1 (de) * 2000-12-29 2002-07-04 Bosch Gmbh Robert Anordnung zur Temperaturmessung und -regelung
US7280028B2 (en) * 2001-12-04 2007-10-09 Delphi Technologies, Inc. Temperature sensor and method of making the same
GB0206069D0 (en) * 2002-03-15 2002-04-24 Ceramaspeed Ltd Electrical heating assembly
US6762671B2 (en) 2002-10-25 2004-07-13 Delphi Technologies, Inc. Temperature sensor and method of making and using the same
JP4009520B2 (ja) * 2002-11-05 2007-11-14 日東電工株式会社 温度測定用フレキシブル配線回路基板
AU2003901253A0 (en) * 2003-03-17 2003-04-03 Zip Holdings Pty Ltd Temperature Sensing Devices, Systems and Methods
US7121722B2 (en) * 2003-05-02 2006-10-17 Ngk Spark Plug Co., Ltd. Temperature sensor
US7915994B2 (en) * 2003-11-13 2011-03-29 Harco Laboratories, Inc. Thermal variable resistance device with protective sheath
EP1619485B8 (fr) † 2004-02-24 2007-10-03 Electrovac AG Capteur de température
DE102005010613B4 (de) * 2004-03-08 2010-09-02 NGK Spark Plug Co., Ltd., Nagoya-shi Platinwiderstands-Temperatursensor
JP5163277B2 (ja) * 2007-05-18 2013-03-13 山里産業株式会社 白金測温抵抗素子の製造方法
DE102007030837B4 (de) * 2007-07-03 2010-05-27 Continental Automotive Gmbh Verfahren und Vorrichtung zum Betreiben einer Brennkraftmaschine
US10228290B2 (en) 2016-04-13 2019-03-12 Board Of Regents, The University Of Texas System Systems and methods for wireless temperature sensing
DE102018110889A1 (de) * 2017-05-16 2018-11-22 Koa Corporation Temperatursensor-Element

Citations (4)

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GB2171253A (en) * 1985-02-06 1986-08-20 Sharp Kk A platinum resistor for the measurement of temperature
DE3603757A1 (de) * 1985-02-16 1986-08-21 Nippon Soken, Inc., Nishio, Aichi Schichtwiderstand fuer eine stroemungsmessvorrichtung
EP0245092A2 (fr) * 1986-05-07 1987-11-11 Ngk Insulators, Ltd. Résistance thermosensible
WO1989003033A1 (fr) * 1987-10-01 1989-04-06 Robert Bosch Gmbh Capteur de temperature a coefficient position de temperature (ptc) et procede de fabrication d'elements de detection de temperature ptc pour ce capteur

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DE3603757A1 (de) * 1985-02-16 1986-08-21 Nippon Soken, Inc., Nishio, Aichi Schichtwiderstand fuer eine stroemungsmessvorrichtung
EP0245092A2 (fr) * 1986-05-07 1987-11-11 Ngk Insulators, Ltd. Résistance thermosensible
WO1989003033A1 (fr) * 1987-10-01 1989-04-06 Robert Bosch Gmbh Capteur de temperature a coefficient position de temperature (ptc) et procede de fabrication d'elements de detection de temperature ptc pour ce capteur

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Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4300084A1 (de) * 1993-01-06 1994-07-07 Heraeus Sensor Gmbh Widerstandsthermometer mit einem Meßwiderstand
AT403851B (de) * 1993-01-06 1998-06-25 Heraeus Sensor Nite Gmbh Widerstandsthermometer mit einem messwiderstand
EP0905494A2 (fr) * 1997-09-26 1999-03-31 SIEMENS MATSUSHITA COMPONENTS GmbH & CO. KG Capteur pour hautes températures
EP0905494A3 (fr) * 1997-09-26 2000-02-23 SIEMENS MATSUSHITA COMPONENTS GmbH & CO. KG Capteur pour hautes températures
EP0973020A1 (fr) * 1998-07-16 2000-01-19 Heraeus Electro-Nite International N.V. Capteur de température électrique comprenant une multi-couche
WO2000004356A1 (fr) * 1998-07-16 2000-01-27 Heraeus Electro-Nite International N.V. Procede permettant de fabriquer une resistance dependante de la temperature et capteur de temperature electrique
US7233226B2 (en) 1999-01-14 2007-06-19 Sensotherm Temperatursenorik Gmbh Method of producing a platinum temperature sensor
US6653926B1 (en) 1999-01-14 2003-11-25 Sensotherm Temperatursensorik Gmbh Platinum temperature sensor and its method of production
US6617956B1 (en) 1999-01-14 2003-09-09 Sensotherm Temperatursensorik Gmbh Platinum temperature sensor and method for producing same
WO2000042404A1 (fr) * 1999-01-18 2000-07-20 Slovak Technical University Procede servant a stabiliser la resistance electrique de fils de platine
EP1384561A1 (fr) * 2002-07-26 2004-01-28 Günther GmbH & Co., Metallverarbeitung Capteur de température et dispositif de chauffage pour systèmes à canaux chauds
CN100360295C (zh) * 2002-07-26 2008-01-09 京特金属制造股份有限公司 用于热浇道系统的温度传感器和加热装置
US8597791B2 (en) 2007-07-30 2013-12-03 Innovative Sensor Technology Ist Ag Sensor of an apparatus for determining and/or monitoring a process variable
WO2009016013A1 (fr) * 2007-07-30 2009-02-05 Innovative Sensor Technology Ist Ag Dispositif destiné à la détermination et/ou au contrôle d'une grandeur de processus
DE102007046900B4 (de) * 2007-09-28 2011-07-21 Heraeus Sensor Technology GmbH, 63450 Hochtemperatursensor und ein Verfahren zu dessen Herstellung
US8183974B2 (en) 2007-09-28 2012-05-22 Heracus Sensor Technology GmbH 1200° C. film resistor
DE102007046900C5 (de) 2007-09-28 2018-07-26 Heraeus Sensor Technology Gmbh Hochtemperatursensor und ein Verfahren zu dessen Herstellung
DE102011051845B3 (de) * 2011-07-14 2012-10-25 Heraeus Sensor Technology Gmbh Messwiderstand mit Schutzrahmen
WO2013007343A2 (fr) 2011-07-14 2013-01-17 Heraeus Sensor Technology Gmbh Résistance de mesure munie d'un cadre de protection
US9606006B2 (en) 2011-07-14 2017-03-28 Heraeus Sensor Technology Gmbh Measuring shunt comprising protective frame

Also Published As

Publication number Publication date
EP0571412B1 (fr) 1998-05-27
EP0571412A1 (fr) 1993-12-01
DE59209347D1 (de) 1998-07-02
US5430428A (en) 1995-07-04
JPH06507521A (ja) 1994-08-25

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