WO1991007773A1 - Procede de traitement sous vide d'un substrat et appareil utilise - Google Patents

Procede de traitement sous vide d'un substrat et appareil utilise Download PDF

Info

Publication number
WO1991007773A1
WO1991007773A1 PCT/JP1990/001441 JP9001441W WO9107773A1 WO 1991007773 A1 WO1991007773 A1 WO 1991007773A1 JP 9001441 W JP9001441 W JP 9001441W WO 9107773 A1 WO9107773 A1 WO 9107773A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
chamber
processing
room
vacuum
Prior art date
Application number
PCT/JP1990/001441
Other languages
English (en)
Japanese (ja)
Inventor
Takashi Inoue
Eiji Fujiyama
Original Assignee
Anelva Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corporation filed Critical Anelva Corporation
Publication of WO1991007773A1 publication Critical patent/WO1991007773A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber

Definitions

  • This invention is for depositing a thin film on the surface of a silicon wafer or another substrate in a vacuum, or for etching a surface thin film substrate. It relates to vacuum processing methods and equipment.
  • Fig. 6 which shows a schematic diagram of the continuous dry-etching equipment, the substrate was transported using the belt exclusively.
  • the worker first stores a plurality of substrates 5 4 to be processed in a large number of shelves in the board carrier 4 7 which forms shelves at regular intervals in the vertical direction. R.
  • the board carrier 4 7 is placed on the upper / lower mechanism 4 6 in the storage room 4 3 so that the conveyor belt 4 9 is sandwiched between them, and the gate valve 5 3 is closed. Then, the inside of the storage chamber 4 3 is evacuated by an exhaust system (not shown), and when the specified vacuum level is reached, the inlet port valve 5 2 is opened.
  • the storage room 4 3 and the spare room 4 2 are in communication with each other.
  • the substrate 5 4 b on the transfer belt 50 is temporarily moved by the raising and lowering of the substrate lifting mechanism 5 5.
  • the gate valve 5 1 is opened, the substrate transfer mechanism 4 8 is further advanced, and the substrate 5 4 c is carried to the position 5 4 b in the processing chamber 41, and the processing chamber 4 1
  • the board up-and-down mechanism 4 5 inside rises, receives the board 5 4 d, and temporarily lifts it to the position 5 4 e.
  • the substrate transport mechanism 4 8 which has finished its function moves to the left along the arrow 480 and returns to the original standby position inside the auxiliary chamber 4 2.
  • the gate valve 5 1 When the substrate up-and-down mechanism 4 5 in the processing chamber 4 1 descends and deposits the substrate 5 4 e at the position of 5 4 f above the electrode 4 4, the gate valve 5 1 is closed and the processing chamber 4 1 is closed. 4 Inside, a prescribed processing device (not shown) operates and processing such as etching, thin film deposition, etc. begins.
  • the substrate up-and-down mechanism 4 5 etc., and the structure of the drive unit in each vacuum chamber are complicated and there are many moving parts.
  • the yield of semiconductor devices has been extremely deteriorated, and in general, only one substrate can be processed at a time inside the processing chamber 41, and the number of processed substrates is increased. Then, the structure became abruptly complicated, and there was a problem in that the occurrence of ghosts was further increased.
  • the present invention solves the above problems and reduces the moving parts in each room in the true sky, thereby significantly reducing the adherence of dust to the substrate.
  • the purpose is to provide a possible vacuum processing method for a substrate and an apparatus. Further, this invention aims to provide a vacuum processing method and apparatus for a substrate capable of improving productivity.
  • the vacuum processing method of the substrate according to the present invention that achieves the above-mentioned object is such that the unprocessed substrate is sequentially transferred from the storage chamber to the preparatory chamber and from the preparatory chamber to the processing chamber, and the substrate is processed in the processing chamber.
  • This is a vacuum processing method for substrates, in which the plate is processed and the processed substrate is transferred from the processing chamber to the preliminary chamber and from the preliminary chamber to the storage chamber.
  • the substrate transfer is set in the preliminary chamber.
  • the substrate transfer robot is used to process the processing chamber by holding the transferred substrate vertically and facing the substrate processing mechanism installed along the vertical wall of the processing chamber. It is characterized by the fact that
  • the transfer of the substrate from the preliminary chamber to the processing chamber may be performed by transferring the substrate transferred from the storage chamber to the auxiliary chamber by the substrate transfer robot to the processing chamber, but in the auxiliary chamber. It may be possible to adjust the orientation flag of the above in a predetermined direction first.
  • the substrate transferred from the processing chamber to the standby chamber may be transferred to the storage chamber as it is, but it is kept in the standby chamber for a while and the next unprocessed substrate is reserved. It is also possible to transfer the substrate from the chamber to the processing chamber, and then transfer the waiting substrate from the preparatory chamber to the storage chamber.
  • the processing in the processing chamber may be ECR etching, thin film forming processing (sputtering, CVD, etc.). Usually, one process is performed on the substrate in the processing chamber.
  • a storage chamber for temporarily storing the substrate in one side of the spare chamber is connected in series via a gate valve, and the other of the spare chamber is provided.
  • at least one processing chamber is connected in series via the gate van Lev, each chamber has its own exhaust system, and the above-mentioned reserve chamber is
  • a substrate transfer robot for transferring the substrate between the storage chamber and the processing chamber is installed, and the processing chamber is provided with a substrate processing mechanism along the vertical wall of the processing chamber.
  • the substrate transfer port It is characterized in that a substrate holder is installed to face the substrate transported by the box to the substrate processing mechanism.
  • the storage chamber can be transferred from the Z- or processing chamber to the storage chamber by means of adjusting the substrate orienting flat plate. It is also possible to install a means for temporarily holding the board to be held.Also, the board holder is basically configured to hold one board, but there are a plurality of boards. It can also be configured to hold one board at a time. It is also possible to add a mechanism to control the substrate temperature.
  • the substrate transfer robot described above may be configured to be able to grip the substrate in the storage chamber and transfer it to the processing chamber.
  • the arm with the substrate holding part at the tip can be extended, expanded, and rotated. In addition, it can be moved up and down and can be transported as described above.
  • the processing chamber is a substrate that is one processing chamber and a substrate that is capable of performing different processing in multiple processing chambers.
  • the processing mechanism includes an ECR (electron cyclotron resonance) etching mechanism, a sputtering mechanism, and a CVD (chemical vapor deposition) machine.
  • the substrate is transferred only by the substrate transfer robot and the substrate holder, so that a significant belt in which the occurrence of dust is generated is required.
  • a significant belt in which the occurrence of dust is generated is required.
  • the substrate is processed so as to face the processing mechanism provided along the vertical wall of the processing chamber, it is possible to avoid the adhesion of the substrate to the substrate even if a stain occurs. be able to .
  • the combined effect of these actions makes it possible to perform vacuum processing on the substrate with a very low contamination power due to the dust.
  • the number of substrate holders can be increased, the number of processing chambers can be increased, and a standby substrate table can be added to the standby chamber.
  • the improvement of productivity has the effect that it can be done easily without complicating the mechanism.
  • Fig. 1 is a plan view of an embodiment of the invention
  • Fig. 2 is a front view of the same
  • Fig. 3 is a partial perspective view of a substrate holder of the embodiment
  • Fig. 4' is a plurality of substrates
  • Fig. 5 is a plan view of an embodiment with multiple processing chambers
  • Fig. 6 is a conventional plasma processing system. Is a front view of the best mode for carrying out the invention.
  • FIGS. 1 to 3 An embodiment of this invention is shown in FIGS. 1 to 3 below. It will be explained based on the shown plasma processing (ECR etching processing) equipment.
  • 1 is a storage room
  • 2 is a standby room
  • 3 is a processing room
  • a vacuum exhaust system (not shown) is connected to each chamber.
  • a valve 6 that can be opened to the atmosphere is installed on the outer wall of the storage chamber 1 facing the gate valve 4, and the substrate is transferred to the lower part outside the valve 6.
  • Machine 7 is installed.
  • the board transfer machine 7 is a board cleaner in which a plurality of boards 9 and 9 in the board carrier 8 placed on the board transfer machine 7 are installed in the storage chamber 1.
  • the device that transfers to the board 10 and vice versa transfers the boards 9 and 9 in the board clamper 10 to the board carrier 8.
  • the clamper 10 is rotated around the rotating mechanism 11 toward the board carrier 8 on the board transfer machine 7, the board carrier 8 and the board are rotated. It is equipped with a function 70 that transfers substrates 9 and 9 between clampers 10.
  • the board transfer robot 12 has an arm 16 with a board gripping part 15 at its tip that can be expanded and contracted (r direction) and rotated (6 direction), and can be moved up and down. (Z direction) Possible Therefore, it is possible to move the board gripping part 15 to any position and hold or release the board 9.
  • the orientation flat adjustment mechanism 13 is a mechanism that orients the orientation flat of the board 9 in a predetermined direction. It can also serve as a table for temporarily holding an unprocessed substrate.
  • the conventional orientation adjustment mechanism used in the past is outside the equipment. It has been installed in the atmosphere and is used for the substrates supplied to the storage room.
  • the substrate table 14 is a table on which the substrate 9 can be placed, and can temporarily hold the processed substrate.
  • This substrate holder 17 has a structure in which a body 19 is provided at the tip of an L-shaped support rod 18 and the base of the support rod 18 penetrates the side wall of the processing chamber 3 and projects to the atmosphere side.
  • the substrate holder one-rotation mechanism 20 can move the body 19 to the position shown by the solid line and the arrow 21 shown between the broken lines. It is.
  • a substrate support rest 23 that can be moved as shown by an arrow 2 2 and a substrate holding mechanism 2 4 that holds the substrate inserted on the substrate support. Is provided so that one substrate 9 can be supported at a predetermined position.
  • the board holder 17 is in the state shown by the chain line. Occasionally, an ion source 25 and a substrate processing mechanism 27 composed of an electromagnetic coil 26 are installed on the vertical wall 3a of the processing chamber 3 facing the substrate supported by the body 19. There is.
  • reference numeral 28 is a gas introduction system connected to the processing chamber 3 (Next, the operation of the above embodiment will be described focusing on the transfer state of the substrate 9.
  • the storage chamber 1 is evacuated, and when the pressure at which the storage chamber 1 can communicate is reached, the gate valve 4 is opened and the storage chamber 1 and the storage chamber 2 are connected.
  • the board transfer robot 12 starts expanding / contracting, rotating, and ascending / descending operations. Grasp the prescribed board 9a of the above and move it into the organization table mounting mechanism 1 3 installed in the spare room 2.
  • the Orientation Flat Alignment Mechanism 1 3 orients the Orientation Flats on the board 9a in the required direction.
  • the gate valve 5 is opened to connect the auxiliary chamber 2 and the processing chamber 3 to each other, and then the substrate 9 a on the orientation switching mechanism 1 3 is connected.
  • Substrate transfer robot 1 2 to the substrate holder 17 side in processing chamber 3. At this time, the substrate holder 1 17 in the processing chamber 3 stands by in the state shown by the solid line in FIGS. 1 and 2 and the substrate transfer robot 1 2
  • the gripped substrate 9a is transferred onto the substrate support 2 3 installed on the body 19 and is then held by the rear substrate holding mechanism 2 4.
  • the arms 16 of the board transfer robot 12 retract to the spare chamber 2 side, and the gate valve is removed.
  • the substrate holder 17 is rotated and the substrate 9 a is opposed to the substrate processing mechanism 27. Then, the substrate processing mechanism 27 can be operated and the plasma processing of the substrate 9a can be performed.
  • the substrate transfer robot 1 2 can perform the transfer operation of the next substrate, and in the same manner as described above, the original transfer of the next unprocessed substrate can be performed.
  • the transport mechanism can be transported to the top and the standby unit can be held in the specified direction. ..
  • the substrate transfer robot ⁇ 2 is temporarily transferred onto the substrate table 1 4. Then, return the processing substrate that was put on standby to the substrate clamper 10 in the storage chamber 1 and put another unprocessed substrate in the original chamber of the standby chamber 2. It is transported to the platform mechanism 1 to 3 and waits for the end of plasma processing in the processing chamber 3.
  • the substrate transfer robot 1 2 is a well-known mouth port, for example, "Wher transfer unit” RR 812 mouth port “RR3Q2""(monthlymagazine” ⁇ Technology ”, Volume 9 No. 8 (1987), pages 5 4 to 60), etc. can be modified and used.
  • Robot drive equipment The same applies to electrical devices.
  • the above-mentioned mouth box "RR 3 0 2" is a two-dimensional robot having a degree of freedom only in two directions of contraction (r direction) and rotation (direction). It is necessary to add a mechanism (not shown in the figure for simplicity) that enables vertical movement (in the z direction).
  • the drive motors for expanding, contracting, rotating, and ascending / descending, gear mechanisms, belt mechanisms, etc. are all accommodated in the introduction pipe 29 installed through the bottom wall of the auxiliary chamber 2.
  • the sliding surface of the boundary of the spare chamber 2 that contacts the vacuum is sealed with a zero ring and a magnetic fluid seal.
  • the substrate holder 17 installed in the processing chamber 3, and the drive mechanisms required for the substrate support 2 3 and the substrate pressing mechanism 2 4 are housed in the support rod 1 8 and the boundary with the vacuum is maintained.
  • the sliding surface of the part is sealed with a zero ring and a magnetic fluid nozzle.
  • a mechanism for controlling the temperature of the substrate such as by blowing a gas to the substrate holder 17 and a mechanism for applying DC power or high frequency power are also provided as needed to support the above. It can also be installed through
  • the number of substrates that can be supported by the substrate holder ⁇ 7 is set as shown in Fig.4. Increase or increase the number of treatment chambers 3 connected to the spare chamber 2 to the treatment chambers 3a, 3b, 3c shown in Fig. 5. However, in any case, the complication of the substrate 9 transfer mechanism is avoided.
  • the board holder 1 17 shown in Fig. 4 has a substantially uniform spacing so that the board support rest 2 3 and the board holding mechanism 24 can support 3 boards, respectively. Form openings 2 3 a and 2 4 a.
  • the mechanism 13 is installed in the unnecessary space 4 (it is not necessary to use S. In this case, the untreated slabs are transported directly from the storage room 1 to the treatment room 3. However, it has not been processed to Ryo's room 2.
  • the orientation flat adjusting mechanism 13 is installed in the auxiliary chamber 2 and the orientation is set just before the treatment of the substrate. Since the operation of supporting the front flap is performed, it is possible to maintain the orientation of the front flap accurately during processing. Wear .
  • the orientation of the orientation flap is not adjusted outside the device, and the conveyance is performed by the rear belt mechanism. Therefore, there are many cases in which the orientation of the orientation frame changes during substrate processing. R.
  • the unprocessed substrate and the treated substrate are separately stored in the preliminary chamber.

Abstract

Selon le procédé décrit, on dépose un film mince à la surface d'un substrat tel qu'une tranche de silicium ou similaire, ou le film à la surface est gravé sous vide. Ce procédé permet de réduire fortement l'adhérence de poussière au substrat, phénomère à éviter pendant le transport et le traitement du substrat. Il permet également d'accroître la productivité sans compliquer le mécanisme. Une enceinte de maintien (1) est située d'un côté d'une enceinte préliminaire (2), et une enceinte de traitement (3) est située de l'autre côté de l'enceinte (2). Un robot (12) transportant le substrat est installé dans l'enceinte (2). L'enceinte (3) contient un porte-substrat (17) agencé de sorte que le substrat (9) qu'il tient puisse être placé contre un mécanisme de traitement de substrats (27) situé le long d'une cloison verticale (3a) de l'enceinte (3). Le substrat (9) est transporté par le robot (12) et maintenu verticalement dans l'enceinte de traitement (3), dans laquelle on effectue les traitements nécessaires.
PCT/JP1990/001441 1989-11-14 1990-11-07 Procede de traitement sous vide d'un substrat et appareil utilise WO1991007773A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP29558189A JPH03155619A (ja) 1989-11-14 1989-11-14 真空処理装置
JP1/295581 1989-11-14

Publications (1)

Publication Number Publication Date
WO1991007773A1 true WO1991007773A1 (fr) 1991-05-30

Family

ID=17822486

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1990/001441 WO1991007773A1 (fr) 1989-11-14 1990-11-07 Procede de traitement sous vide d'un substrat et appareil utilise

Country Status (2)

Country Link
JP (1) JPH03155619A (fr)
WO (1) WO1991007773A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5288379A (en) * 1991-12-04 1994-02-22 Anelva Corporation Multi-chamber integrated process system
US5304405A (en) * 1991-01-11 1994-04-19 Anelva Corporation Thin film deposition method and apparatus
US5494494A (en) * 1992-06-24 1996-02-27 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing substrates
EP0824266A2 (fr) * 1996-08-05 1998-02-18 Kokusai Electric Co., Ltd. Dispositif pour le traitement de substrats

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5516732A (en) * 1992-12-04 1996-05-14 Sony Corporation Wafer processing machine vacuum front end method and apparatus
JP5369233B2 (ja) * 2010-03-19 2013-12-18 パナソニック株式会社 プラズマ処理装置及びプラズマ処理方法
JP5550600B2 (ja) * 2011-04-13 2014-07-16 パナソニック株式会社 プラズマ処理装置及びプラズマ処理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5763678A (en) * 1980-10-03 1982-04-17 Hitachi Ltd Sputtering device
JPS6130030B2 (fr) * 1981-03-12 1986-07-10 Nichiden Anelva Kk
JPS6276628A (ja) * 1985-09-30 1987-04-08 Toshiba Corp ドライエツチング装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62219915A (ja) * 1986-03-20 1987-09-28 Fuji Electric Co Ltd 半導体基板の処理装置
JP2868767B2 (ja) * 1987-11-04 1999-03-10 富士電機株式会社 半導体ウエハ処理装置
JPH01253237A (ja) * 1988-03-31 1989-10-09 Anelva Corp 真空処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5763678A (en) * 1980-10-03 1982-04-17 Hitachi Ltd Sputtering device
JPS6130030B2 (fr) * 1981-03-12 1986-07-10 Nichiden Anelva Kk
JPS6276628A (ja) * 1985-09-30 1987-04-08 Toshiba Corp ドライエツチング装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5304405A (en) * 1991-01-11 1994-04-19 Anelva Corporation Thin film deposition method and apparatus
US5288379A (en) * 1991-12-04 1994-02-22 Anelva Corporation Multi-chamber integrated process system
US5494494A (en) * 1992-06-24 1996-02-27 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing substrates
US5505779A (en) * 1992-06-24 1996-04-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing substrates
US5534072A (en) * 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
EP0824266A2 (fr) * 1996-08-05 1998-02-18 Kokusai Electric Co., Ltd. Dispositif pour le traitement de substrats
EP0824266A3 (fr) * 1996-08-05 1998-04-15 Kokusai Electric Co., Ltd. Dispositif pour le traitement de substrats

Also Published As

Publication number Publication date
JPH03155619A (ja) 1991-07-03

Similar Documents

Publication Publication Date Title
US6225233B1 (en) Semiconductor device manufacturing machine and method for manufacturing a semiconductor device by using THE same manufacturing machine
US4149923A (en) Apparatus for the treatment of wafer materials by plasma reaction
JPH0249424A (ja) エッチング方法
JPS6130030B2 (fr)
JP2600399B2 (ja) 半導体ウエーハ処理装置
US6251191B1 (en) Processing apparatus and processing system
WO2003100848A1 (fr) Dispositif et procede de traitement de substrats
CN112219269A (zh) 用于加工工件的系统和方法
WO1991007773A1 (fr) Procede de traitement sous vide d'un substrat et appareil utilise
JPH05152215A (ja) 成膜装置
JP2000021947A (ja) 乾式処理装置
JPH05175162A (ja) ドライエッチング装置
US6860711B2 (en) Semiconductor-manufacturing device having buffer mechanism and method for buffering semiconductor wafers
JP2857097B2 (ja) 真空処理装置
JPS62996B2 (fr)
JP2553590B2 (ja) 金属の選択堆積方法及びその装置
TW593715B (en) Sputtering method
JPH0542507B2 (fr)
JPS5858726A (ja) 半導体処理装置
JPH0242901B2 (fr)
JP3121022B2 (ja) 減圧処理装置
JPS6074531A (ja) 真空処理装置
JPH054282Y2 (fr)
JPH062951B2 (ja) 気相反応装置
JPH0159354B2 (fr)

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): CA KR US

NENP Non-entry into the national phase

Ref country code: CA