593715 A7 _____B7 五、發明説明（1 ) 【發明所屬之技術領域】 本發明是關於真空處理的技術領域，特別是關於對複 數個基板連續地進行真空處理之技術。 【先行技術】 以往以來，使用在1台的搬運室的周圍連接有複數台 的處理室之多處理室型的真空處理裝置作爲在基板表面形 成薄膜的量產裝置。 第19圖的圖號102是顯示該真空處理裝置。在搬運室 150的周圍連接有複數個處理室（在此顯示著2台的處理室 151、153 )。 以1台的處理室153爲例說明其內部結構。在此處理 .室153的壁面中之連接於搬運室150的壁面上設有通過口 124。在此通過口 124設有未圖示的閘閥，當通過口 124受 到該閘閥所堵塞時，搬運室150的內部環境是由處理室153 的內部環境分離，當打開閘閥時搬運室150的內部環境是 連接於處理室153的內部環境。 在處理室153的壁面中之與形成有通過口 124的壁面 相向之壁面上配置標板支架123。 在處理室153的底壁上配置基板保持裝置11〇°基板保 持裝置110是具有旋轉軸114、保持板111、升降板113 ’ 旋轉軸114是被水平地配置於標板支架123的附近° 保持板111是被安裝於旋轉軸114上，當使旋轉軸111 旋轉時可形成水平姿勢、也能形成垂直姿勢。第20圖是顯 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） _4 · (請先閱讀背面之注意事項\^^寫本頁) 裝· 寫太 訂 經濟部智慧財產局員工消費合作杜印製 593715593715 A7 _____B7 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to the technical field of vacuum processing, and particularly to the technology of continuously vacuum processing a plurality of substrates. [Advanced technology] Conventionally, a vacuum processing apparatus of a multi-processing chamber type in which a plurality of processing chambers are connected around a single transfer chamber has been used as a mass production apparatus for forming a thin film on a substrate surface. Reference numeral 102 in FIG. 19 shows the vacuum processing apparatus. A plurality of processing chambers are connected around the transfer chamber 150 (two processing chambers 151 and 153 are shown here). The internal structure of one processing chamber 153 will be described as an example. Of the wall surfaces of the processing chamber 153, a passage opening 124 is provided on the wall surface of the processing chamber 150, which is connected to the wall surface. Here, the gate 124 is provided with a gate valve (not shown). When the gate 124 is blocked by the gate valve, the internal environment of the transfer chamber 150 is separated by the internal environment of the processing chamber 153. When the gate valve is opened, the internal environment of the transfer chamber 150 is opened. It is an internal environment connected to the processing chamber 153. A target plate holder 123 is disposed on a wall surface of the processing chamber 153 facing a wall surface on which the passage opening 124 is formed. The substrate holding device 110 is disposed on the bottom wall of the processing chamber 153. The substrate holding device 110 includes a rotation shaft 114, a holding plate 111, and a lifting plate 113. The rotation shaft 114 is horizontally disposed near the target plate holder 123. The plate 111 is mounted on the rotation shaft 114, and when the rotation shaft 111 is rotated, it can be in a horizontal posture or a vertical posture. Figure 20 shows the paper size applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) _4 · (Please read the precautions on the back first \ ^^ write this page) Consumer cooperation, printed, 593715
經濟部智慧財產局員工消費合作社印製J-I A7 _____B7五、發明説明（2 ) 示處於水平姿勢的保持板111。 在搬運室150內配置有基板搬運機器人140。基板搬運 機器人140是具有旋轉軸、根部分安裝於該旋轉軸之臂部 141、安裝於該臂部141前端的手部143，當使旋轉軸旋轉 而使得臂部141伸縮時，能夠在水平面內移動手部143。 在上述的真空處理裝置102進行成膜作業的情況時， 將基板105載乘於手部143上，打開閘閥，將手部143插入 至處理室153內，使其靜止於水平姿勢的保持板111上。 升降板11 3是被配置於水平姿勢的保持板111的下方 ，在該升降板Π3的表面立設有複數支插銷117。在保持板 111設有複數個孔11 8，當將升降板113朝上方移動時，各 插銷117是插通於水平姿勢的保持板111的孔11 8內。然後 ，進一步使插銷117上升時，插銷117的上端部分是由手 部143之間朝上述突出，其結果，使基板105載乘於插銷 117的上端部。第20圖是顯示該狀態。 接著，當將手部143返回至搬運室150使升降板113下 降時，基板105是載乘於保持板111上。第21圖是顯示該 狀態。 當利用設在保持板111的未圖示之保持機構，將基板 105保持於保持板111上，將旋轉軸Π4旋轉使保持板111 豎立時，如第22圖所示，基板105是與保持板111 一同豎 立。在標板支架123內垂直地配置著未圖示的標板，當基 板105形成豎立姿勢時，基板1〇5的表面是對標板平行地 相向。 本紙張尺度適用中國國家標準（CNS ) A4規格（210x 297公釐] -5- (請先閲讀背面之注意事項寫本頁}Printed by J-I A7 _____B7 by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (2) Shows the holding plate 111 in a horizontal posture. A substrate transfer robot 140 is disposed in the transfer chamber 150. The substrate transfer robot 140 has a rotation axis, an arm portion 141 with a root portion mounted on the rotation axis, and a hand portion 143 mounted on the front end of the arm portion 141. When the rotation axis is rotated to expand and contract the arm portion 141, it can be in a horizontal plane. Move hand 143. When the vacuum processing apparatus 102 is performing a film forming operation, the substrate 105 is loaded on the hand 143, the gate valve is opened, the hand 143 is inserted into the processing chamber 153, and the holding plate 111 is kept at a horizontal posture. on. The lifting plate 113 is arranged below the holding plate 111 in a horizontal posture, and a plurality of pins 117 are erected on the surface of the lifting plate Π3. The holding plate 111 is provided with a plurality of holes 118. When the lifting plate 113 is moved upward, each latch 117 is inserted into the hole 118 of the holding plate 111 in a horizontal posture. When the latch 117 is further raised, the upper end portion of the latch 117 protrudes from between the hands 143. As a result, the substrate 105 is carried on the upper end of the latch 117. Fig. 20 shows this state. Next, when the hand 143 is returned to the transfer room 150 to lower the lifting plate 113, the substrate 105 is carried on the holding plate 111. Fig. 21 shows this state. When a holding mechanism (not shown) provided on the holding plate 111 is used to hold the substrate 105 on the holding plate 111 and the rotation axis Π4 is rotated to hold the holding plate 111 upright, as shown in FIG. 22, the substrate 105 is connected to the holding plate 111 stand together. A target plate (not shown) is vertically arranged in the target plate holder 123. When the base plate 105 is in an upright position, the surface of the substrate 105 faces the target plate in parallel. This paper size applies to China National Standard (CNS) A4 (210x 297 mm) -5- (Please read the precautions on the back first to write this page}
I 裝· «i 593715 經濟部智慧財產局員工消費合作社印製 A7 _B7五、發明説明（3 ) 在此狀態下關閉閘閥，由搬運室1 50遮斷處理室1 53 的內部，將濺鍍氣體導入至處理室1 5 3內，對標板附加電 壓進行濺鍍，在基板105的表面形成薄膜。 當形成預定膜層厚度的薄膜後，由處理室15 3的內部 排出濺鍍氣體，當處理室153內部的壓力下降到與搬運室 150內的壓力相同程度後，打開處理室153與搬運室150之 間的閘閥，連接處理室153的內部環境與搬運室150的內 部環境，將基板搬運機器人140的手部143插入至處理室 153內，使已形成有薄膜的基板載乘於手部143，由處理室 153的內部搬出後，再搬入至後續製程的處理室內部。 當從手部143上除去形成有薄膜的基板105後，將手 部143插入到前製程的處理內與搬入室內，載乘尙未處理 的基板，通過搬運室150的內部後搬入至處理室153內， 進行濺鍍作業。 如上所述，在以往技術的濺鑛方法，必須：由處理室 1 53內部除去形成有薄膜的基板後，將尙未處理的基板載乘 於手部143上後搬入到處理室153內，開始對該基板進行 濺鍍作業。由於將處理結束的基板交換成尙未處理的基板 之間，無法進行在處理室153內部的成膜作業，故，交換 所需的時間變得浪費。 【發明所欲解決之課題】 本發明是爲了解決上述先行技術的瑕疵而創作完成的 發明，其目的在於，提供在交換基板之間也能夠進行真空 i紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項寫本頁) _ 裝· 訂 593715 A7 B7 五、發明説明（4 ) 處理的基板保持裝置、與使用該基板保持裝置的真空處理 裝置。 【用以解決課題之手段】 爲了解決上述課題，申請專利範圍第1項之發明是一 種濺鍍方法，是在垂直地設置有標板之處理室內搬入第1 基板，將前述基板做成與前述標板平行，將濺鍍氣體導入 前述處理室內後濺鍍前述標板，成膜於前述第.1基板表面 之濺鍍方法，其特徵爲··在濺鑛前述第1基板中，將接著 欲進行濺鍍處理的第2基板搬入到前述處理室內。 申請專利範圍第2項之發明是在於申請專利範圍第1 項之濺鍍處理方法，其中，在前述處理室介由閘閥連接著 搬運室，將位於前述搬運室內的前述第2基板，打開前述 閘閥搬入至前述處理室內，在打開前述閘閥前將輔助氣體 導入至前述搬運室內，使前述搬運室的內部壓力與前述處 理室的內部壓力大致一致後，打開前述閘閥，將第2基板 搬入至前述處理室內。 本發明是因如上所述的結構，當在處理室內使第1基 板垂直地豎立的狀態下正進行濺鍍時，接著將欲進行濺鍍 處理的第2基板搬入至處理室內，所以比起濺鍍處理結束 後再進行基板交換的情況，能縮短處理時間。 由於閘閥是在濺鍍中被打開，連接搬運室的內部與處 理室的內部，故，在打開閘閥前預先使搬運室內的壓力與 處理室內的壓力大致一致，再打開閘閥進行連接時處理室 本紙張尺度適用中.國國家標準（CNS ) A4規格（210X297公釐） ,(請先閲讀背面之注意事項寫本頁) 裝. 訂 經濟部智慧財產局員工消費合作社印製 593715 經濟部智慧財產局8工消費合作社印製0-4 Μ _______Β7五、發明説明（5 ) 內的壓力也不會產生變動，因此能夠穩定地進行濺鍍。 【發明之實施形態】 第1圖的圖號2是顯示能使用本發明的濺鍍方法之真 空處理裝置的一例。 此真空處理裝置2是具有搬運室50、搬出入室51、處 理室52〜56。搬出入室51與處理室52〜56是介由閘閥71 〜7 6分別連接於搬運室5 0的側面。 在搬運室50、搬出入室51與處理室52〜56分別連接 有真空排氣系統60〜66、氣體導入系統80〜86，當關閉各 閘閥71〜76使真空排氣系統60〜66動作時，個別地將搬出 入室51、搬運室50與各處理室52〜56的內部進行真空排 氣。 連接於各處理室52〜56的氣體導入系統82〜86是連接 有因應在處理室52〜56內部所進行的處理之儲氣筒。例如 ，對濺鍍處理爲氬氣，對CVD爲薄膜的原料氣體與載體氣 體，對蝕刻處理爲有機氟氣等的鈾刻氣體。 另一方面，在連接於搬運室50的氣體導入系統80，連 接有塡充著氮氣或氬氣之惰性輔助氣體的儲氣筒。 在此搬運室50內，配置有基板搬運機器人40。基板搬 運機器人40是具有旋轉軸44、臂部42與手部43。旋轉軸 44是被垂直地配置著，安裝有臂部42的其中一端。手部 43是安裝於臂部的另一端，利用旋轉軸44的旋轉，使臂部 42進行伸縮動作，隨此手部43在水平面內移動。手部43 本紙張尺度適用中國國家標準（CNS ) Α4規格（2!〇χ297公釐） (請先閲讀背面之注意事項寫本頁) y 裝 、11 1—593715 A7 B7 五、發明説明（6 ) 的前端被分割，形成叉狀，後述的插銷1 7插入於手部43 內。 第2圖是爲了說明本發明，而省略處理室52、54〜56 的真空處理裝置2之斜視圖，顯示著搬運室50、搬出入室 51與一台的處理室53。 在此處理室53內配置著基板保持裝置10。該基板保持 裝置1〇是具有：上側基板支架丨丨、下側基板支架12、上 側旋轉軸14、下側旋轉軸15以及升降板13。 上側旋轉軸14是水平地配置於處理室53內，下側旋 轉軸15是對上側旋轉軸14朝水平方向分離，且在下方位 置對上側旋轉軸14平行地配置著。圖號22是顯示上側旋 轉軸14的旋轉軸線，圖號25是顯示下側旋轉軸15的旋轉 軸線。在上側旋轉軸14與下側旋轉軸15，安裝有未圖示的 電動機，上側旋轉軸14與下側旋轉軸15是能夠分別以旋 轉軸線22、25進行旋轉。 上側基板支架11與下側基板支架1 2是呈4角形狀的 板體，其一邊是分別沿著軸線方向安裝於上側旋轉軸Η與 下側旋轉軸1 5上。 第2圖是顯示上側基板支架11與下側基板支架1 2分 別處於在水平狀態下靜止的水平姿勢的情況，當上側基板 支架11與下側基板支架丨2均處於水平姿勢時，在具有間 隙的狀態下相互重疊。 升降板13是水平地配置於處於水平姿勢的下側基板支 架12的垂直下方位置。在升降板13的表面，直立設置有 (請先閱讀背面之注意事項一^寫本頁) _裝· 寫太 訂 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -9 - 593715 經濟部智慧財產局員工消費合作社印製 A7 __________ ΒΊ _ 五、發明説明（7 ) 複數支的插銷17。升降板丨3是構成，對上側基板支架11 與下側基板支架12可相對地上下移動，隨著升降板13的 上下移動，插銷17也上下移動。 再處於水平姿勢十的上側基板支架1 1與下側基板支架 1 2的各插銷1 7的垂直上方位置，分別設有孔1 8、1 9。因此 ，當將上側基板支架1 1與下側基板支架1 2作成水平姿勢 ，使升降板1 3朝上方移動時，則插銷17插入到孔1 8、19 〇 第2圖是顯示利用基板搬運機器人40由搬出入室5 1 內取出處理對象之基板5，將其搬入到處理室53前的狀態 〇 又在第2圖，在搬運室50與處理室53之間的閘閥73 呈打開的狀態，搬運室50與處理室53是利用通過口 24使 內部鄕連接。 此處理室53是濺鍍室，在處理室53的壁面中的與形 成有通過口 24的壁面相對向之一壁面上，配置有標板支架 23 ° 上側基板支架11、下側基板支架12與升降板13是構 成能在水平面內一起旋轉。在第2圖中，在上側旋轉軸14 位於通過口 24側，下側旋轉軸1 5位於標板支架23側的狀 態下靜止著。 當由此狀態在水平面內旋轉180°時，如第3圖所示， 下側旋轉軸15位於通過口 24側，上側旋轉軸14位於標板 支架23側。 (請先閱讀背面之注意事項寫本頁 裝· ^^寫太 .-^1· S-6 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -10- 593715 經濟部智慧財產局員工消費合作社印製 A7 ___ _B7五、發明説明（8 ) 第4圖是顯不由該狀態使上側旋轉軸14旋轉9 〇。，將 處於水平姿勢的上側基板支架11作成垂直的暨立姿勢之狀 態。處於豎立姿勢的上側基板支架11是平行地面向於標板 支架23內的標板。 第5圖是與第4圖相反’顯示下側旋轉軸1 5位於標板 支架23側，上側旋轉軸14位於通過口 24側，下側基板支 架12處於豎立姿勢，上側基板支架丨丨處於水平姿勢的狀 態。處於豎立姿勢的下側基板支架1 2是平行地面向於標板 支架23內的標板。 在可移動於上下方向地構成上側旋轉軸14與下側旋轉 軸1 5的情況，能夠如第7圖所示，使上側基板支架11處 於豎立姿勢時（第7圖左側的狀態）之高度、與下側基板 支架1 2處於豎立姿勢時（第7圖右側的狀態）的高度一致 〇 第6圖是顯示在如第5圖所示的上側基板支架11處於 水平姿勢，下側基板支架12處於豎立姿勢的狀態下，升降 板13朝上方移動的情況。插銷π的前端視由上側基板支 架11的孔17突出。 其次，說明關於使用上述基板保持裝置10，在處理室 53內進行本發明的濺鍍方法之順序。 參照第8圖，首先，下側基板支架12處於豎立姿勢， 上側基板支架11處於水平姿勢，在下側基板支架12呈利 用濺鍍法來形成薄膜的途中之基板5a被垂直地保持著的狀 態。 (請先閲讀背面之注意事項寫本頁)I equipment «i 593715 Printed by A7 _B7 of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention description (3) In this state, the gate valve is closed, and the inside of the processing chamber 1 53 is blocked by the transfer room 1 50. Sputtered gas It is introduced into the processing chamber 153, and a target is subjected to sputtering by applying a voltage to form a thin film on the surface of the substrate 105. After a thin film having a predetermined film thickness is formed, the sputtering gas is discharged from the inside of the processing chamber 153. When the pressure inside the processing chamber 153 drops to the same level as the pressure in the transfer chamber 150, the processing chamber 153 and the transfer chamber 150 are opened. The gate valve therebetween connects the internal environment of the processing chamber 153 and the internal environment of the transfer chamber 150, and inserts the hand 143 of the substrate transfer robot 140 into the processing chamber 153, so that the substrate on which the film has been formed is carried on the hand 143. After being carried out from the inside of the processing chamber 153, it is carried into the inside of the processing chamber for subsequent processes. After the substrate 105 having the thin film formed thereon is removed from the hand 143, the hand 143 is inserted into the processing and carrying room of the previous process, and the unprocessed substrate is carried and passed through the inside of the carrying room 150 and then carried into the processing room 153. Inside, a sputtering operation is performed. As described above, in the conventional sputtering method, it is necessary to remove the substrate on which the thin film is formed from the inside of the processing chamber 153, load the unprocessed substrate on the hand 143, and then transfer it to the processing chamber 153 to start. This substrate is subjected to a sputtering operation. Since the substrates that have been processed are exchanged between the unprocessed substrates, the film-forming operation in the processing chamber 153 cannot be performed, so the time required for the exchange is wasted. [Problems to be Solved by the Invention] The present invention is an invention created to solve the defects of the prior art described above. The purpose of the invention is to provide a vacuum that can be carried out even between exchange substrates. Paper size Applicable to China National Standard (CNS) A4 (210X297 mm) (Please read the notes on the back to write this page first) _ Binding and ordering 593715 A7 B7 V. Description of the invention (4) The substrate holding device for processing and the vacuum processing device using the substrate holding device. [Means to solve the problem] In order to solve the above-mentioned problem, the first invention of the scope of patent application is a sputtering method. The first substrate is carried in a processing chamber provided with a target plate vertically. The target plates are parallel, and the sputtering gas is introduced into the processing chamber, and then the target plate is sputtered and formed on the surface of the first substrate. The sputtering method is characterized in that in the first substrate sputtered, The second substrate subjected to the sputtering process is carried into the processing chamber. The invention of item 2 of the scope of patent application is the sputtering process method of item 1 of the scope of patent application, wherein the processing chamber is connected to the transfer chamber via a gate valve, and the second substrate located in the transfer chamber is opened and the gate valve is opened. Carry in the processing chamber, introduce auxiliary gas into the transfer chamber before opening the gate valve, make the internal pressure of the transfer chamber approximately equal to the internal pressure of the processing chamber, open the gate valve, and carry the second substrate into the process indoor. The present invention has the structure described above. When the first substrate is sputtered while the first substrate is standing vertically in the processing chamber, the second substrate to be sputtered is then transferred into the processing chamber. When the substrate is exchanged after the plating process is completed, the processing time can be shortened. The gate valve is opened during sputtering and connects the inside of the transfer chamber with the inside of the processing chamber. Therefore, before opening the gate valve, make the pressure in the transfer chamber approximately equal to the pressure in the processing chamber before opening the gate valve for connection. Paper size is applicable. National National Standard (CNS) A4 specification (210X297 mm), (Please read the notes on the back to write this page). Order. Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives. 593715 Intellectual Property Bureau of the Ministry of Economic Affairs Printed by 8consumer cooperatives 0-4 Μ _______B7 Fifth, the pressure in the description of the invention (5) will not change, so the sputtering can be performed stably. [Embodiment of Invention] Fig. 2 in Fig. 1 shows an example of a vacuum processing apparatus to which the sputtering method of the present invention can be used. This vacuum processing apparatus 2 includes a transfer chamber 50, a loading / unloading chamber 51, and processing chambers 52 to 56. The loading / unloading chamber 51 and the processing chambers 52 to 56 are connected to the side of the transfer chamber 50 through gate valves 71 to 76, respectively. Vacuum transfer systems 60 to 66 and gas introduction systems 80 to 86 are connected to the transfer chamber 50, the loading / unloading chamber 51, and the processing chambers 52 to 56, respectively. When the gate valves 71 to 76 are closed to operate the vacuum exhaust systems 60 to 66, The inside of the loading / unloading chamber 51, the transfer chamber 50, and each of the processing chambers 52 to 56 are individually evacuated. The gas introduction systems 82 to 86 connected to the respective processing chambers 52 to 56 are gas reservoirs connected to the processes performed inside the processing chambers 52 to 56. For example, argon gas is used for the sputtering process, uranium etching gas, such as organic fluorine gas, is used for the source gas and carrier gas of the CVD thin film. On the other hand, the gas introduction system 80 connected to the transfer chamber 50 is connected to a gas cylinder filled with an inert auxiliary gas such as nitrogen or argon. In this transfer chamber 50, a substrate transfer robot 40 is arranged. The substrate transfer robot 40 includes a rotation shaft 44, an arm portion 42, and a hand portion 43. The rotation shaft 44 is vertically arranged, and one end of the arm portion 42 is attached. The hand portion 43 is attached to the other end of the arm portion, and the arm portion 42 is extended and retracted by the rotation of the rotation shaft 44, and the hand portion 43 moves in the horizontal plane with the movement. Hand 43 This paper size applies Chinese National Standard (CNS) A4 specification (2! 〇χ297 mm) (Please read the precautions on the back to write this page) y Packing, 11 1-593715 A7 B7 V. Description of the invention (6 ) Is divided into a fork shape, and a latch 17 to be described later is inserted into the hand 43. Fig. 2 is a perspective view of the vacuum processing apparatus 2 in which the processing chambers 52, 54 to 56 are omitted for the purpose of explaining the present invention, and shows a transfer chamber 50, a loading / unloading chamber 51, and a single processing chamber 53. A substrate holding device 10 is disposed in the processing chamber 53. The substrate holding device 10 includes an upper substrate holder 丨 丨, a lower substrate holder 12, an upper rotation shaft 14, a lower rotation shaft 15, and a lifting plate 13. The upper rotary shaft 14 is horizontally arranged in the processing chamber 53, and the lower rotary shaft 15 is horizontally separated from the upper rotary shaft 14 and is arranged parallel to the upper rotary shaft 14 in a lower position. Fig. 22 shows the rotation axis of the upper rotation shaft 14, and Fig. 25 shows the rotation axis of the lower rotation shaft 15. A motor (not shown) is attached to the upper rotation shaft 14 and the lower rotation shaft 15, and the upper rotation shaft 14 and the lower rotation shaft 15 can rotate on the rotation axes 22 and 25, respectively. The upper substrate holder 11 and the lower substrate holder 12 are rectangular plates, and one side of the upper substrate holder 11 and the lower substrate holder 12 are respectively mounted on the upper rotation shaft Η and the lower rotation shaft 15 along the axial direction. FIG. 2 shows a case where the upper substrate holder 11 and the lower substrate holder 12 are in a horizontal posture in which they are stationary in a horizontal state. When the upper substrate holder 11 and the lower substrate holder 2 are in a horizontal posture, there is a gap. Overlap with each other. The elevating plate 13 is horizontally disposed at a position vertically below the lower substrate holder 12 in a horizontal posture. On the surface of the lifting plate 13 is installed upright (please read the precautions on the back first ^ write this page) _ installed · write Taiding Ministry of Economic Affairs Intellectual Property Bureau employee consumer cooperatives printed this paper standard applicable to China National Standards (CNS) A4 Specifications (210X297 mm) -9-593715 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 __________ ΒΊ _ 5. Description of the Invention (7) Plural pins 17 The lifting plate 3 is configured to relatively move up and down with respect to the upper substrate holder 11 and the lower substrate holder 12, and as the lifting plate 13 moves up and down, the latch 17 also moves up and down. In the horizontal posture, the upper substrate holder 11 and the lower substrate holder 12 of each of the pins 17 are located vertically above each other, and holes 18, 19 are respectively provided. Therefore, when the upper substrate holder 11 and the lower substrate holder 12 are placed in a horizontal posture and the lifting plate 13 is moved upward, the pins 17 are inserted into the holes 18 and 19. The second figure shows the use of a substrate transfer robot 40 The state in which the substrate 5 to be processed is taken out from the loading / unloading chamber 5 1 and transferred to the processing chamber 53 is shown in FIG. 2 again. The gate valve 73 between the transfer chamber 50 and the processing chamber 53 is opened and transported. The chamber 50 and the processing chamber 53 are connected to each other through the passage port 24. This processing chamber 53 is a sputtering chamber. Among the wall surfaces of the processing chamber 53, which is opposite to the wall surface on which the passage opening 24 is formed, a target plate holder 23 ° is disposed on the upper substrate holder 11, the lower substrate holder 12 and The lifting plate 13 is configured to be rotatable together in a horizontal plane. In Fig. 2, the upper rotary shaft 14 is positioned on the passage opening 24 side, and the lower rotary shaft 15 is positioned on the target plate holder 23 side. When rotated 180 ° in the horizontal plane in this state, as shown in Fig. 3, the lower rotation shaft 15 is located on the passage opening 24 side, and the upper rotation shaft 14 is located on the target plate holder 23 side. (Please read the precautions on the back first and write on this page. ^^ Write too .- ^ 1 · S-6 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -10- 593715 Intellectual property of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Bureau A7 ___ _B7 V. Description of the invention (8) The fourth picture shows that the upper rotation shaft 14 is rotated 90 ° in this state. The upper substrate support 11 in the horizontal posture is made into a vertical and standing posture. State. The upper substrate holder 11 in the upright position faces the target plate parallel to the target plate holder 23. Fig. 5 is the opposite of Fig. 4 'shows that the lower rotation axis 15 is on the target plate holder 23 side and the upper side rotates The shaft 14 is located on the side of the passage opening 24, and the lower substrate support 12 is in an upright posture, and the upper substrate support 丨 丨 is in a horizontal posture. The lower substrate support 12 in the upright posture is a standard that faces the target holder 23 in parallel. When the upper rotation shaft 14 and the lower rotation shaft 15 are configured to be movable in the vertical direction, the upper substrate holder 11 can be placed in an upright position as shown in FIG. 7 (the state on the left side of FIG. 7). Height, and The height of the lower substrate holder 12 is the same when it is in the upright position (the state on the right side of Fig. 7). Fig. 6 shows that the upper substrate holder 11 shown in Fig. 5 is in the horizontal position and the lower substrate holder 12 is in the upright position. When the lifting plate 13 is moved upward in the postured state. The front end of the pin π protrudes from the hole 17 of the upper substrate holder 11 as described below. Next, using the substrate holding device 10 described above, the sputtering of the present invention is performed in the processing chamber 53. The sequence of the plating method. Referring to FIG. 8, first, the lower substrate holder 12 is in an upright position, the upper substrate holder 11 is in a horizontal posture, and the lower substrate holder 12 has a substrate 5a in the middle of forming a thin film by sputtering. (Please read the notes on the back to write this page)
R 裝· 訂 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -11 - 593715 經濟部智慧財產局員工消費合作社印製 _:ΰ· A7 ___B7_ 五、發明説明（9 ) 第8圖及後述的第9至18圖的圖號26是顯示垂直地 配置於標板支架23內的標板，第8圖的狀態爲利用濺鍍之 薄膜形成作業中的狀態，基板5a是面向於標板26。 在此狀態下，處理室53與搬運室50之間的閘閥73是 被關閉的狀態，在處理室53內，利用多流量控制器（Mass Flow Controller ; MFC )等邊流量控制氬氣等的濺鍍氣體邊 將其導入，將內部作成iO-tpa〜10+1Pa程度的壓力。 另一方面，搬運室50的內部是利用真空排氣竭統60 作成較處理室53低的壓力。 在此狀態下使基板搬運機器人40作動，由搬出入室51 與其他的處理室52、54〜56取出基板，將在搬運室50與搬 出入室51之間及搬運室50與處理室52〜56之間的閘閥71 〜76作成已關閉的JKJI，由搬出入室51或各處理室52〜56 的內部遮斷搬運室50的內部環境。 接著，利用連接於搬運室50的氣體導入系統80，藉由 多流量控制器邊進行流量控制邊將輔助氣體導入到搬運室 50內部，使搬運室50內部環境的壓力上升至與濺鍍中的處 理室53內部環境的壓力呈相同的壓力。 被導入到搬運室50的內部之輔助氣體是即使侵入到處 理室53的內部也不會影響到在處理室53內所進行的濺鍍 等的真空處理之惰性氣體，例如使用N2或氬氣等的惰性氣 體。在此，導入與導入至處理室53內部中的濺鍍氣體爲相 同的氬氣作爲輔助氣體。 當解除搬運室50與處理室53之間的壓力差之後，打 本紙張尺度適用中國國家標準（CNS ) A4規格(210X297公釐） _ 12 - (請先閱讀背面之注意事項寫本頁) _裝· 寫太 訂 593715 A7 -----—______ 五、發明説明（10 ) 開在此之間的閘閥73，連接搬運室50的內部環境與濺鍍中 的處理室53的內部環境，接著將利用濺鍍形成有薄膜的基 板載乘於手部43上，通過通過口 24將手部43插入至處理 室53內部。第9圖是顯示該狀態，手部43是位在處於水 平姿勢的上側基板支架11的上方。圖號5b是顯示在載乘 於手部4 3上後接著形成有薄膜的基板。 接著，如第1 〇圖所示，當使升降板13朝上方移動時 ，插銷17的前端是較上側基板支架11的表面高度更突出 ’當更上升時，不會與手部43接觸而抵接於基板5b的裏 面。其結果，基板5b是由手部43上移轉到插銷17的上端 部。 在該狀態下，如第11圖所示，將手部43返回至搬運 室50內，當如第12圖所示地使升降板13下降時，升降插 銷17的上端部上的基板5b邕載乘於處在水平姿勢的上側 基板支架11上。接著，使未圖示的保持機構作動，將基板 5b密著保持於上側基板支架11上。 在手部43被返回到搬運室50後，搬運室50與處理室 53之間的閘閥73被關閉，搬運室50的內部環境是由濺鍍 處理中的處理室53之內部環境分離。 在該狀態下停止朝搬運室50內導入輔助氣體，將搬運 室50內部做成低壓力，在與其他的處理室52、54〜56或與 搬出入室5 1之間進行基板的搬出、搬入。 在處理室53內部，即使在關閉閘閥73後也持續進行 濺鍍，當在基板5a上形成預定膜層厚度的薄膜後，停止朝 本紙張尺度適用中國國家標準（CNS ) A4規格（2i〇x 297公釐] -13: (請先閱讀背面之注意事項寫本頁) _裝 寫太R The size of the paper for binding and binding applies to the Chinese National Standard (CNS) A4 (210X297 mm) -11-593715 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs _: ΰ · A7 ___B7_ V. Description of the Invention (9) Section 8 Fig. 26 and Fig. 9 to Fig. 18, which are described later, show the target plate vertically arranged in the target plate holder 23. The state in Fig. 8 is a state in which a thin film is formed by sputtering, and the substrate 5a faces Plate 26. In this state, the gate valve 73 between the processing chamber 53 and the transfer chamber 50 is closed. In the processing chamber 53, a side flow such as a mass flow controller (MFC) is used to control the splash of argon or the like. While the plating gas is introduced, the inside pressure is about iO-tpa to 10 + 1 Pa. On the other hand, the inside of the transfer chamber 50 is made lower in pressure than the processing chamber 53 by the vacuum exhaust system 60. In this state, the substrate transfer robot 40 is operated, and the substrate is taken out from the loading / unloading chamber 51 and other processing chambers 52, 54 to 56. The gate valves 71 to 76 are used to form a closed JKJI, and the internal environment of the transfer chamber 50 is blocked by the interior of the loading / unloading chamber 51 or each of the processing chambers 52 to 56. Next, the gas introduction system 80 connected to the transfer chamber 50 is used to introduce the auxiliary gas into the transfer chamber 50 while controlling the flow rate by a multi-flow controller, so that the pressure in the internal environment of the transfer chamber 50 rises to that during sputtering. The pressure of the environment inside the processing chamber 53 is the same. The auxiliary gas introduced into the transfer chamber 50 is an inert gas that does not affect the vacuum processing such as sputtering performed in the processing chamber 53 even if it penetrates into the processing chamber 53. For example, N2 or argon is used. Inert gas. Here, the same argon gas as that of the sputtering gas introduced into the inside of the processing chamber 53 is used as the auxiliary gas. When the pressure difference between the transfer chamber 50 and the processing chamber 53 is released, the size of the paper is applicable to the Chinese National Standard (CNS) A4 (210X297 mm) _ 12-(Please read the precautions on the back to write this page) _ Installation and writing too much 593715 A7 -----——______ V. Description of the invention (10) The gate valve 73 opened in between connects the internal environment of the transfer chamber 50 and the internal environment of the processing chamber 53 during sputtering, and then The substrate on which the thin film is formed by sputtering is carried on the hand 43, and the hand 43 is inserted into the processing chamber 53 through the opening 24. Fig. 9 shows this state, and the hand 43 is positioned above the upper substrate holder 11 in a horizontal posture. Fig. 5b shows a substrate on which a thin film is formed after being carried on the hand 43. Next, as shown in FIG. 10, when the lifting plate 13 is moved upward, the front end of the latch 17 is more protruded than the surface height of the upper substrate holder 11. When it rises further, it will not come into contact with the hand 43 and abut. It is connected to the inside of the substrate 5b. As a result, the substrate 5b is moved from the hand portion 43 to the upper end portion of the latch 17. In this state, as shown in FIG. 11, the hand portion 43 is returned to the transfer chamber 50. When the lifting plate 13 is lowered as shown in FIG. 12, the substrate 5 b on the upper end portion of the lifting pin 17 is loaded. Riding on the upper substrate holder 11 in a horizontal posture. Next, a holding mechanism (not shown) is operated to closely hold the substrate 5b on the upper substrate holder 11. After the hand 43 is returned to the transfer chamber 50, the gate valve 73 between the transfer chamber 50 and the processing chamber 53 is closed, and the internal environment of the transfer chamber 50 is separated from the internal environment of the processing chamber 53 during the sputtering process. In this state, the introduction of the auxiliary gas into the transfer chamber 50 is stopped, the inside of the transfer chamber 50 is made to a low pressure, and the substrates are unloaded and unloaded between the other processing chambers 52, 54 to 56 or the unloading chamber 51. Inside the processing chamber 53, sputtering is continued even after the gate valve 73 is closed. When a thin film having a predetermined film thickness is formed on the substrate 5a, the application of the Chinese National Standard (CNS) A4 specification (2i〇x) to the paper size is stopped. 297 mm] -13: (Please read the precautions on the back to write this page)
、1T 經濟部智慧財產局員工消f合作社印製3-3· 593715 A7 B7 五、發明説明（11 ) 標板26施加電壓與停止朝處理室53內導入濺鍍氣體，結 束濺鍍處理。 在濺鍍處理結束後，使上側基板支架11與下側基板支 架1 2旋轉，如第1 3圖所示，使下側基板支架1 2位於通過 口 24側，使上側基板支架11位於標板26側，接著，如第 14圖所示，使上側基板支架1 1豎立，將濺鍍氣體導入至處 理室53的內部，開始進行標板26的濺鍍處理之朝基板5b 的表面的薄膜形成作業。 其次，如第15圖所示，使下側基板支架12處於水平 姿勢後，如第16圖所示，使升降板13上升，將接述薄膜 形成作業的基板5a載乘於插銷17上。 此時，在基板搬運機器人40的手部43上未載置基板 ，且搬運室50與搬出入室51及處理室52〜56之間的閘閥 71〜76被關閉，在搬運室50的內部導入輔助氣體，使該其 壓力上升至與處理室53的內部呈壓力相同程度。 在該狀態下打開閘閥73，連接濺鍍處理中的處理室53 的內部環境與搬運室50的內部環境，如第Π圖所示，將 基板搬運機器人40的手部43插入至基板5a與下側基板支 架12之間。 接著，使升降板13下降，如第18圖所示，將形成有 薄膜的基板5a載乘於手部43上後，使手部43退回至搬運 室50內，則基板保持裝置10是如第8圖所示相同地呈在1 片的基板的表面上進行薄膜形成中的狀態。 在此狀態下，因由下側基板支架1 2取下處理結束的基 (請先閱讀背面之注意事項^^寫本頁) 裝·1. 1T printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, 3-3, 593715, A7, B7. 5. Description of the invention (11) Apply voltage to the target plate 26 and stop the introduction of sputtering gas into the processing chamber 53 to end the sputtering process. After the sputtering process is completed, the upper substrate holder 11 and the lower substrate holder 12 are rotated. As shown in FIG. 13, the lower substrate holder 12 is positioned on the passage opening 24 side, and the upper substrate holder 11 is positioned on the target plate. On the 26 side, as shown in FIG. 14, the upper substrate holder 11 is erected, a sputtering gas is introduced into the processing chamber 53, and a sputtering process of the target plate 26 is started to form a thin film on the surface of the substrate 5 b. operation. Next, as shown in Fig. 15, after lower substrate holder 12 is placed in a horizontal posture, as shown in Fig. 16, the elevating plate 13 is raised, and substrate 5a, which is subjected to the film forming operation, is carried on latches 17. At this time, the substrate is not placed on the hand 43 of the substrate transfer robot 40, and the gate valves 71 to 76 between the transfer chamber 50 and the loading / unloading chamber 51 and the processing chambers 52 to 56 are closed, and the auxiliary is introduced into the transfer chamber 50. The gas raises the pressure to the same level as the pressure inside the processing chamber 53. In this state, the gate valve 73 is opened to connect the internal environment of the processing chamber 53 and the internal environment of the transfer chamber 50 during the sputtering process. As shown in FIG. Π, the hand 43 of the substrate transfer robot 40 is inserted into the substrate 5a and below. Between the side substrate holders 12. Next, the lifting plate 13 is lowered, and as shown in FIG. 18, the substrate 5a on which the film is formed is carried on the hand 43 and then the hand 43 is returned to the conveying chamber 50. The substrate holding device 10 is as shown in FIG. As shown in FIG. 8, a state where a thin film is being formed on the surface of one substrate is similarly shown. In this state, the substrate that has finished the processing is removed by the lower substrate holder 12 (Please read the precautions on the back first ^ write this page)
、1T 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） -14- 593715 A7 ________B7 五、發明説明（12 ) 板5a ’所以’能夠當利用基板搬運機器人4〇使在處理室53 內形成薄膜的基板載乘時，則可接續地在基板表面形成薄 膜。 【發明效果】 比起在濺鍍處理結束後進行基板交換的情況，能夠縮 短處理時間。 【圖面之簡單說明】 第1圖是顯示能夠使用本發明方法的真空處理裝置的 一例的圖。 第2圖是用來說明使用於該真空處理裝置的基板保持 裝置的圖。 第3圖用來說明該基板保持裝置的動作的圖（1 )。 第4圖用來說明該基板保持裝置的動作的圖（2 )。 第5圖用來說明該基板保持裝置的動作的圖（3 )。 第6圖用來說明該基板保持裝置的動作的圖（4 )。 第7圖是用來說明使處於豎立姿勢的上側基板支架與 下側基板支架的高度一致的情況時的圖。 第8圖是用來說明本發明方法的順序的圖（1 )。 第9圖是用來說明本發明方法的順序的圖（2 )。 第10圖是用來說明本發明方法的順序的圖（3 )。 第11圖是用來說明本發明方法的順序的圖（4)。 第12圖是用來說明本發明方法的順序的圖（5 )。 (請先閱讀背面之注意事項寫本頁) _裝' 寫太、 1T Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) -14- 593715 A7 ________B7 V. Description of the invention (12) Board 5a can be used as When the substrate transfer robot 40 carries a substrate on which a thin film is formed in the processing chamber 53, the thin film can be successively formed on the substrate surface. [Effect of the Invention] The processing time can be shortened compared to the case where the substrate is exchanged after the sputtering process is completed. [Brief Description of the Drawings] Fig. 1 is a diagram showing an example of a vacuum processing apparatus that can use the method of the present invention. Fig. 2 is a diagram illustrating a substrate holding device used in the vacuum processing apparatus. FIG. 3 is a diagram (1) for explaining the operation of the substrate holding device. Fig. 4 is a diagram (2) for explaining the operation of the substrate holding device. Fig. 5 is a diagram (3) for explaining the operation of the substrate holding device. Fig. 6 is a diagram (4) for explaining the operation of the substrate holding device. Fig. 7 is a diagram for explaining a case where the heights of the upper substrate holder and the lower substrate holder in the standing position are aligned with each other. Fig. 8 is a diagram (1) for explaining the sequence of the method of the present invention. Fig. 9 is a diagram (2) for explaining the sequence of the method of the present invention. Fig. 10 is a diagram (3) for explaining the sequence of the method of the present invention. Fig. 11 is a diagram (4) for explaining the sequence of the method of the present invention. Fig. 12 is a diagram (5) for explaining the sequence of the method of the present invention. (Please read the notes on the back first to write this page) _ 装 'Write too
、1T 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS〉Α4規格（210X 297公釐） -15 - 593715 A7 — B7 """" " --1 五、發明説明（13 ) 第1 3圖是用來說明本發明方法的順序的圖（6 )。 第14圖是用來說明本發明方法的順序的圖（7 )。 第1 5圖是用來說明本發明方法的順序的圖（8 )。 第1 6圖是用來說明本發明方法的順序的圖（9 )。 第17圖是用來說明本發明方法的順序的圖（1〇 )。 第1 8圖是用來說明本發明方法的順序的圖（11 )。 第19圖是用來說明使用先行技術的濺鍍方法的真空處 理裝置的圖。 第20圖是用來說明先行技術的濺鍍方法的順序之圖（ 1) 〇 第21圖是用來說明先行技術的濺鍍方法的順序之圖（ 2 )。 第22圖是用來說明先行技術的濺鍍方法的順序之圖（ 3) ° 【圖號說明】 5、5a、5b…基板 26…標板 50…搬運室 53…處理室 (請先閱讀背面之注意事項寫本頁) _裝' (HI寫太 訂 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） -16-、 1T Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, this paper is printed according to the Chinese national standard (CNS> Α4 specification (210X 297 mm) -15-593715 A7 — B7 " " " " " --1 5. Description of the invention (13) Figure 13 is a diagram (6) for explaining the sequence of the method of the present invention. Figure 14 is a diagram (7) for explaining the sequence of the method of the present invention. Figure (8) to explain the sequence of the method of the present invention. Figure 16 is a diagram (9) to illustrate the sequence of the method of the present invention. Figure 17 is a diagram (10) to illustrate the sequence of the method of the present invention. Fig. 18 is a diagram (11) for explaining the sequence of the method of the present invention. Fig. 19 is a diagram for explaining a vacuum processing apparatus using a prior art sputtering method. Fig. 20 is for explaining the prior art. (1). Figure 21 is a diagram (2) illustrating the sequence of the prior art sputtering method. Figure 22 is a diagram illustrating the sequence of the prior art sputtering method. (3) ° [Illustration of drawing number] 5, 5a, 5b ... Substrate 26 ... Target plate 50 ... Transporting room 53 ... Processing (Please read the notes on the back first to write this page) _Installation '(HI writes Taiding printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and the Consumer Cooperatives) This paper is printed in accordance with China National Standard (CNS) A4 (210 X 297 mm) -16-