WO1990012425A1 - Method for applying a layer of superconducting material and a device suitable therefor - Google Patents
Method for applying a layer of superconducting material and a device suitable therefor Download PDFInfo
- Publication number
- WO1990012425A1 WO1990012425A1 PCT/EP1990/000602 EP9000602W WO9012425A1 WO 1990012425 A1 WO1990012425 A1 WO 1990012425A1 EP 9000602 W EP9000602 W EP 9000602W WO 9012425 A1 WO9012425 A1 WO 9012425A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- magnetic field
- oxygen
- layer
- applying
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 10
- 239000000463 material Substances 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000001301 oxygen Substances 0.000 claims abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 13
- 238000001556 precipitation Methods 0.000 claims description 3
- 238000004868 gas analysis Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 230000003993 interaction Effects 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000002161 passivation Methods 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/087—Oxides of copper or solid solutions thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0521—Processes for depositing or forming copper oxide superconductor layers by pulsed laser deposition, e.g. laser sputtering
Definitions
- the drawback of these prior arts comprises the diffusion and/or chemical re ⁇ actions between substrate and the superconducting layer to be applied thereto, particularly in the case of semiconduc ⁇ tor substrates such as gallium arsenide (GaAs) and silicon (Si) .
- the difference in coefficient of expansion between the different materials may also be a cause of crystal-grid errors.
- the present invention has for its object to improve the above mentioned prior art and provides to this end a me ⁇ thod according to claim 1.
- the present invention also provides a device as ac ⁇ cording to claim 5 wherein other micro-electronic layers such as conducting layers and the like can also be applied in a simple manner.
- the (dry) etching of layers can also take place in such a device.
- a device 1 comprises a chamber 2 wherein a substrate S is disposed on a substrate holder 3.
- a laser bundle B is directed via an entrance or window 4 onto a superconducting piece of material M according to the per se known ablation technigue so that material to be applied to the substrate S is released form the piece of material.
- a holder 5 for the material M preferably takes a rotating form so that overhea ⁇ ting thereof is avoided.
- a schematically indicated microwave system 6 com ⁇ prising two solenoids (7, 8).
- the magnetic field generated by the solenoids 7,8 is preferably dimensioned such that at two spots in this field the value is 875 Gauss.
- Oxygen which is brought into the chamber in a manner not shown is ionised at these spots and enters a plasma state in the area between the two spots.
- the generated ions are transported along the magnetic field lines over the substrate. Since interaction with the chamber walls is avoided as far as possible, a pure and clean plasma is produced resulting in pure and clean layers.
- the chamber 2 is kept at underpressure, for example of 10 "9 Torr, using a Balzer TM pump (not shown) .
- the device 1 is preferably provided with Knudsen or effusion cells (9, 11) for applying other layers.
- a YAG laser (12) is preferably galvanically con ⁇ trolled so that patterns can be written onto a substrate herewith.
- the method can also be used for deposition of other layers such as diamond or epitaxial silicium.
- a layer was grown in a plasma with an oxygen pressu ⁇ re of 5 x 10 "4 Torr and after that "quenched", i.e. chilled as quickly as possible.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Optics & Photonics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP89200904.4 | 1989-04-10 | ||
| EP89200904 | 1989-04-10 | ||
| NL9000214A NL9000214A (nl) | 1989-04-10 | 1990-01-29 | Werkwijze voor het aanbrengen van een laag supergeleidend materiaal en een daarvoor geschikte inrichting. |
| NL9000214 | 1990-01-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1990012425A1 true WO1990012425A1 (en) | 1990-10-18 |
Family
ID=26121046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP1990/000602 WO1990012425A1 (en) | 1989-04-10 | 1990-04-10 | Method for applying a layer of superconducting material and a device suitable therefor |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP0392630B1 (de) |
| JP (1) | JPH04501102A (de) |
| AT (1) | ATE124574T1 (de) |
| DE (1) | DE69020409T2 (de) |
| DK (1) | DK0392630T3 (de) |
| ES (1) | ES2073508T3 (de) |
| GR (1) | GR3017236T3 (de) |
| WO (1) | WO1990012425A1 (de) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1989008605A1 (en) * | 1988-03-16 | 1989-09-21 | Kabushiki Kaisha Toshiba | Process for producing thin-film oxide superconductor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6274073A (ja) * | 1985-09-26 | 1987-04-04 | Hitachi Ltd | スパツタ装置 |
-
1990
- 1990-04-10 WO PCT/EP1990/000602 patent/WO1990012425A1/en unknown
- 1990-04-10 ES ES90200882T patent/ES2073508T3/es not_active Expired - Lifetime
- 1990-04-10 EP EP90200882A patent/EP0392630B1/de not_active Expired - Lifetime
- 1990-04-10 DE DE69020409T patent/DE69020409T2/de not_active Expired - Fee Related
- 1990-04-10 AT AT90200882T patent/ATE124574T1/de active
- 1990-04-10 DK DK90200882.0T patent/DK0392630T3/da active
- 1990-04-10 JP JP2505627A patent/JPH04501102A/ja active Pending
-
1995
- 1995-08-30 GR GR950402345T patent/GR3017236T3/el unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1989008605A1 (en) * | 1988-03-16 | 1989-09-21 | Kabushiki Kaisha Toshiba | Process for producing thin-film oxide superconductor |
Non-Patent Citations (2)
| Title |
|---|
| APPLIED PHYSICS LETTERS. vol. 52, no. 4, 25 January 1988, NEW YORK US pages 320 - 322; L.LYNDS et al: "Superconducting thin films of Y-Ba-Cu-O produced by neodymium:yttrium aluminum garnet laser ablation" see figure 1 * |
| APPLIED PHYSICS LETTERS. vol. 53, no. 3, 18 July 1988, NEW YORK US pages 234 - 236; S. WITANACHCHI et al: "Deposition of superconducting Y-Ba-Cu-O films at 400 ØC without post-annealing" see page 234 * |
Also Published As
| Publication number | Publication date |
|---|---|
| DE69020409D1 (de) | 1995-08-03 |
| DK0392630T3 (da) | 1995-08-28 |
| GR3017236T3 (en) | 1995-11-30 |
| EP0392630A1 (de) | 1990-10-17 |
| ES2073508T3 (es) | 1995-08-16 |
| EP0392630B1 (de) | 1995-06-28 |
| DE69020409T2 (de) | 1995-11-16 |
| JPH04501102A (ja) | 1992-02-27 |
| ATE124574T1 (de) | 1995-07-15 |
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