WO1989002418A1 - Procede et dispositif de purification de liquides - Google Patents

Procede et dispositif de purification de liquides Download PDF

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Publication number
WO1989002418A1
WO1989002418A1 PCT/AT1988/000070 AT8800070W WO8902418A1 WO 1989002418 A1 WO1989002418 A1 WO 1989002418A1 AT 8800070 W AT8800070 W AT 8800070W WO 8902418 A1 WO8902418 A1 WO 8902418A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor layer
porous
metal oxide
semiconductor
hollow cylinder
Prior art date
Application number
PCT/AT1988/000070
Other languages
German (de)
English (en)
Inventor
Wolfgang Schwarz
Michael Graetzel
Original Assignee
Simmering-Graz-Pauker Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Simmering-Graz-Pauker Aktiengesellschaft filed Critical Simmering-Graz-Pauker Aktiengesellschaft
Priority to KR1019890700771A priority Critical patent/KR890701479A/ko
Publication of WO1989002418A1 publication Critical patent/WO1989002418A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/72—Treatment of water, waste water, or sewage by oxidation
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/30—Treatment of water, waste water, or sewage by irradiation
    • C02F1/32—Treatment of water, waste water, or sewage by irradiation with ultraviolet light
    • C02F1/325—Irradiation devices or lamp constructions
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/72—Treatment of water, waste water, or sewage by oxidation
    • C02F1/725—Treatment of water, waste water, or sewage by oxidation by catalytic oxidation
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2201/00—Apparatus for treatment of water, waste water or sewage
    • C02F2201/32—Details relating to UV-irradiation devices
    • C02F2201/322—Lamp arrangement
    • C02F2201/3228—Units having reflectors, e.g. coatings, baffles, plates, mirrors
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2305/00—Use of specific compounds during water treatment
    • C02F2305/10—Photocatalysts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
    • Y02W10/00—Technologies for wastewater treatment
    • Y02W10/30—Wastewater or sewage treatment systems using renewable energies
    • Y02W10/37—Wastewater or sewage treatment systems using renewable energies using solar energy

Definitions

  • the invention relates to a method and a device for cleaning a liquid contaminated with organic and / or inorganic foreign substances, in particular water, using the photocatalytic and / or catalytic properties of semiconductors and optionally adding an oxidizing agent to the liquid.
  • the invention further relates to the use of a semiconductor layer.
  • Aromatic hydrocarbons can also be decomposed in aqueous dispersions of oxidic semiconductors under the influence of light. Examples include the work of RW Matthews ("Hydroxylation Reactions Induced by Near-Ultra-Violet Photolysis of Aqueous Titanium Dioxide Suspensions ", J.Chem.Soc, Farad.Trans.
  • TiO 2 is particularly suitable as a photocatalyst for water treatment and the extraction of precious metals from solutions.
  • TiO 2 has the advantage that it is chemically inert (except for HF and concentrated sulfuric acid), has no toxicity and does not corrode when exposed to light.
  • the band gap is 3 - 3.2 eV, corresponding to a light absorption edge in the near UV at 400 nm. Irradiation of TiO 2 with light below 400 nm causes charge separation in positively charged holes (P + vb ) in the valence band on the TiO 2 surface and negatively charged electrons (e- Lb ) in the conduction band.
  • air and nitrous oxide can also be used as an oxidizing agent or as an acceptor for the conduction band electrons or hydrogen peroxide can be used, the activity being additionally increased by the addition of additives, such as hypochlorite.
  • the conduction band electrons react with reducible functional groups of the substrate, for example -NO 2 , -C1. This reaction accelerates the detoxification of the organic compound and is of great importance in the degradation of chlorinated organic compounds:
  • the object of the invention is to find a method and a device for removing chemical pollutants from drinking and waste water and for separating metals from water and other liquids, which does not have the disadvantages of the above-mentioned methods.
  • the process should also provide high efficiency in the photocatalytic decontamination of the water.
  • the organic chemical pollutants should can be broken down quickly and completely into carbon dioxide.
  • Inorganic contaminants, such as nitrate anions, should also be eliminated quantitatively.
  • the method of the type mentioned at the outset is characterized in that the organic and / or inorganic foreign substances are adsorbed and reacted on the surface of a light-activated semiconductor layer and inorganic foreign substances from the group of noble metals are deposited on the surface of the light-activated semiconductor layer.
  • the surface of the semiconductor layer can be polarized by an electric field before or during use for adsorption or decomposition, so that depending on the polarity either the holes or the electrons are drawn to the surface and thus the electron-hole recombination is reduced .
  • the semiconductor layer used can consist of porous material in order to increase the active surface.
  • the porous semiconductor layer can be applied to a carrier.
  • the carrier can also be porous, so that the liquid to be cleaned can also pass through the carrier and the semiconductor layer.
  • the light excitation generates electron-hole pairs in the semiconductor layer. These react with the chemical impurities dissolved in the liquid according to the above-mentioned mechanisms on the semiconductor surface. This leads to a complete breakdown of the impurities found in drinking water or waste water, for example.
  • Anions such as nitrate, are reductively decomposed. If an aqueous solution or liquids other than inorganic pollutants contain noble metal ions, these are reduced by reaction with the conduction band electrons and are thus deposited on the semiconductor layer.
  • the chemical composition of the semiconductor layer is chosen so that no corrosion or photocorrosion occurs on contact with the liquid or solution.
  • Semiconductor materials such as the Perovskite CaTiO 3 , SrTiO 3 , BaTiO 3 , LaCrO 4 and other ternary compounds are used, whereby a wider range of applications is achieved.
  • the principle that can be used is any semiconductor that can be excited with ultraviolet, visible or monochromatic light and that has photocatalytic activity with regard to the decomposition of chemical pollutants or the reduction of noble metal ions.
  • the choice of semiconductor is therefore in no way limited to inorganic ialenfeterials.
  • Organic semiconductors such as polyvinyl carbazole and other compounds, are equally suitable.
  • a further feature of the semiconductor layer used according to the invention is that it can consist of a polycrystalline film. In addition to these films, amorphous films can also be used. Suitable sensitizers can also be applied to the surface of the
  • Suitable sensitizers are, for example, chromophores or derivatives of ruthenium bispyridyl complexes.
  • the photocatalytic activity of the semiconductor material can be increased by suitable additives.
  • additives can be combined with the semiconductor material in various ways.
  • foreign ions can be introduced into the semiconductor lattice in a substitutional manner. This allows both the position of the redox level and the kinetics of the charge carrier recombination can be controlled.
  • doping TiO 2 with zirconium dioxide shifts the redox level of the conduction bands negatively.
  • the rate of charge carrier recombination in TiO 2 is reduced by substitutional introduction of trivalent iron ions, which is of great advantage for photocatalytic applications.
  • the photocatalytic properties of semiconductors can also be favorably influenced by heterogeneous addition of additives.
  • the third type of additives according to the invention is the landfilling of catalytically active substances on the semiconductor surface.
  • Oxidation catalysts such as Fe 2 O 3 and reduction catalysts such as platinum metals and their oxides are of particular importance.
  • the choice or combination of additives for the photocatalytic reaction to be carried out by the semiconductor is optimally adapted.
  • ZiB. be produced by applying the photocatalytically active semiconductor substance, for example to a glass frit.
  • the pore sizes of the filter should be small enough so that the dissolved pollutant molecules come into contact with the exposed part of the TiO 2 wall during the filtering process. Also advantageous are pore sizes that meet the conditions for a Knudsen diffusion of the pollutant molecules. It has been shown that the suitable pore diameters are in the size range from 10 to 100 ⁇ m.
  • the chemical pollutants which can be degraded by the process according to the invention are mostly bioresistant compounds, in particular ether (bis (2-chloro-isopropyl) ether, bis (2chloroethoxy) methane, 4-bromophenylphenyl ether, 4-chloro phenyl-phenyl-ether; chlorinated aliphatic compounds (ethylene-chlorohydrine, trichlorethylene); ketones (methyl vinyl ketone); aliphatic N-compounds (nitroso-dimethyl-amines); cyclic aliphatic compounds (tetra-hydrophthalimides, Te tra-hydro-phthalic acid); aromatic compounds (1-naphthylamine, 1-naphthylamine-5-sulfonic acid, naphthalene, di-m-butylphthalate, 1,1'-diphenylhydrazine, benzidine, benzo (a) anthracene) and chlorinated aromatic compounds (PCB- 1238
  • FIG. 2 shows a second device for carrying out the method according to the invention in section along the lines II-II in FIG. 3,
  • Fig. 3 shows the device of FIG. 2 in section along the lines III-III in Fig. 2, and
  • 1 denotes an irradiation vessel, which consists of a first hollow cylinder 2 and a second hollow cylinder 3, which is partially inserted into the first hollow cylinder 2.
  • a flange 4, 5 screwed by means of three bolts 6, 7 and nuts 8, 9 each.
  • the right flange 4 presses a disk-shaped window 10 via a sealing ring 11 against the projecting end face of the second hollow cylinder 3, an elastic ring 12 being inserted between the window 10 and the flange 4.
  • the left flange 5 presses a disk-shaped window 13 against the end face of the first hollow cylinder 2 via a sealing ring 14, an elastic ring 15 being inserted between the window 13 and the flange 5.
  • the inner end face of the second hollow cylinder 3 rests on a disc-shaped filter 17 via a sealing ring 16, which is supported via a sealing ring 18 against a bearing surface on the first hollow cylinder, which is reduced from the outer diameter of the second hollow cylinder 3 by a reduction in the inner diameter of the first hollow cylinder 2 the inner diameter of the second hollow cylinder 3 is formed.
  • the filter 17 is provided on both sides with a porous semiconductor layer 19, 20, which are illuminated by the windows 10, 13 by lamps 21, 22.
  • the chamber formed by the inner wall of the hollow cylinders 2, 3 and the windows 10, 13 is divided by the filter 17 into a pressure chamber 23 and a filtrate chamber 24.
  • the windows 10, 13 are preferably made of quartz glass.
  • the water to be cleaned is fed from a tank 25 to the pressure chamber 23 via a line 26 and a first bore 27 in the first hollow cylinder 2.
  • a pump 28 and two valves 29, 30 are provided in line 26.
  • the cleaned water returns from the filter chamber 24 through a first bore 31 in the second hollow cylinder 3 and a line 32 with a valve 332x1m tank 25 and can circulate several times until it has the desired degree of purity.
  • a line 35 with a valve 36 is connected to a second bore 34 in the first hollow cylinder 2.
  • a manometer 37 is connected to control the operating pressure of, for example, 30 bar and a pressure relief valve 38, which responds, for example, at 40 bar.
  • a line 40 with valve 41 is connected to a second hole 39 In the second hollow cylinder 3.
  • the water to be cleaned has or has reached the desired degree of purification, it can be removed from the circuit via valves 36 or 41.
  • oxygen is blown into the water in the tank 25 via a line 42 as an oxidizing agent, which can escape from the tank 25 via the line 43.
  • the system according to FIG. 1 can also be used only with a lamp and a semiconductor layer.
  • FIGS. 2 and 3 show a further exemplary embodiment of a water treatment system which consists of an irradiation vessel 1 'with a plurality of hollow cylinders lying coaxially to one another.
  • a lamp 44 which is enclosed by a first hollow cylinder 45 made of translucent material.
  • the first hollow cylinder 45 is enclosed by a second hollow cylinder 46 made of translucent material, which is provided on the inside and outside with a light-active semiconductor slide 47, 48, preferably made of TiO 2 .
  • the second hollow cylinder 46 is made of translucent by a third hollow cylinder 49
  • Bores 55, 56 and 57, 58 are provided in the end plates in the region between the second hollow cylinder 46 and the first and third hollow cylinders 45, 49 for supplying and removing the water.
  • the water can For example, supplied via the two holes 55, 56 and discharged via the holes 57, 58 (parallel operation), or the water can be supplied via the hole 55, discharged via the hole 57 and then fed to the hole 58 and discharged via the hole 56 be (serial operation).
  • Bores 59, 60 and 61, 62 can be provided in the end plates 52, 53 for supplying and removing a cooling medium, such as air, the treated water, or a circulating cooling liquid for the lamps 44 and 51. If necessary, substances can be added to the cooling liquid which absorb certain wavelength ranges of the lamp emission.
  • the second hollow cylinder 46 which carries the semiconductor layers 47, 48, is impermeable to water.
  • the water to be cleaned is supplied, for example, via the bore 56.
  • a part of the water exits through the bore 58 and can be returned to the bore 56 in a circuit, while another part of the water via the pores of the semiconductor layers 47, 48 and the second hollow cylinder 46 enters the space between the first and second hollow cylinders and exits, for example, via the bore 57, the bore 55 being closed.
  • the amount of water flowing through the pores is determined by the pore size and the pressure difference between the inlet and outlet. The contact time of the water with the exposed semiconductor layer can thereby be set.
  • Fig. 4 shows the arrangement of an electrode 63 in the form of a grid, network or the like. in front of a semiconductor layer 64, which is applied to a conductive carrier 65.
  • the electrode 63 and the carrier 65 are provided with connections 66, 67, which are connected to a DC voltage source of 0.5-4 V.
  • electrode 63 is connected to a negative direct voltage potential, the recombination rate of the holes and electrons is reduced by the electric field.
  • This arrangement of the electrode can be transferred, for example, to the embodiment according to FIGS. 2 and 3.
  • One liter of this aqueous solution was circulated through the TiO 2 filter, which was simultaneously irradiated with a 450 W xenon lamp. There was an optical filter between the lamp and the solution, which absorbed light of wavelengths below 300 nm. This prevents the direct photolysis of trichlorethylene.
  • 67% of the trichlorethylene was decomposed. After filtering twice, it was over 90%. In the unexposed state of the TiO 2 filter, the decrease in the trichlorethylene concentration was less than 10%.
  • the water contained 100 ppm p-chlorophenol. 10 liters of this solution were circulated through a tubular TiO 2 filter, which was irradiated from the inside with one, and outside with three 1000 W Hg high pressure lamps. At a throughput rate of 100 liters per hour and the addition of 100 ppm sodium hypochlorite, 90% of the p-chlorophenol was mineralized without the formation of intermediates.
  • the water contained 50 ppm p-NItraphenol. 10 liters of this solution, which was additionally mixed with 0.2 mol of sodium persulfate, were treated, as in experiment 3, on a tubular TiO 2 filter irradiated with 41000 W Hg high-pressure lamps. After 30 minutes, 95% of the nitrophenol was mineralized.
  • Liquid titanium (IV) tetrabutoxide is applied to a porous support made of glass, in particular Duran glass, with an optional pore size of either 40 to 100 ⁇ m or 16 to 40 ⁇ m and sucked into the pores of the support by applying a weak vacuum.
  • air drying at a temperature of 20 to 25oC for at least 24 hours.
  • hydrolysis of the butoxide with heating to 30 to 100 ° C in air at a relative humidity of 40 to 60%, preferably 50%.
  • Subsequent calcination at a temperature of 450 ° C over a period of 20 min. crystalline anatase is obtained.
  • the porosity is checked by sucking through water.
  • a Ti-ethyl alcohol solution is prepared by dissolving 21 / mmol of freshly distilled TiCl 4 in 10 ml of pure ethyl alcohol. Then dilute with pure methyl alcohol until a Ti concentration of 20 to 50 mg / ml is reached. This solution is applied to a porous support, preferably by spraying, which creates a thin layer of Ti oxide, which is then hydrolyzed. The hydrolysis is carried out at a temperature of 20 ° C. for a period of 30 minutes, while maintaining a relative air humidity of 50%. This is followed by calcining at 450 ° C for 15 minutes. In this way, a plurality of Ti oxide layers can be produced in succession. The last shift is 30 min. long calcined.
  • the Ti-O 2 layer can optionally be doped, etc. in two ways: 1.
  • the tetrabutoxide in liquid titanium (IV) or in example 2 in the ethyl / methyl alcohol-TiCl 4 solution Dopant dissolved as an alcoholate or halide.
  • the dopant zirconium tetrachloride, iron trichloride, tin tetrabutoxide or the like. be used.
  • a dispersion of 10 g of fine TiO 2 powder in 100 ml of benzene is applied to a porous carrier and sucked in until the liquid component emerges dropwise. This is followed by drying in air for 15 minutes, followed by further drying in vacuo at 40 ° C. Finally, calcination is carried out at a temperature of 450 ° C for 20 minutes.

Abstract

Procédé et dispositif de purification de liquides et notamment d'eau, contaminés par des impuretés inorganiques et/ou organiques. Les impuretés sont transformées et/ou précipitées par l'utilisation des propriétés catalytiques et photocatalytiques de semi-conducteurs, si nécessaire avec l'addition d'un oxydant. A cette fin, on applique un semi-conducteur sous la forme d'au moins une couche semi-conductrice, par exemple une couche poreuse, sur un substrat également poreux (17), afin de réaliser un filtre pouvant être activé par la lumière d'au moins une lampe (22), par lequel s'écoule le liquide qui est ainsi purifié. Le stimulus lumineux engage des réactions d'oxydoréduction à la surface de la couche semi-conductrice, conduisant à la transformation de substances chimiques nocives, ou à la précipitation de métaux nobles dissous.
PCT/AT1988/000070 1987-09-08 1988-09-08 Procede et dispositif de purification de liquides WO1989002418A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890700771A KR890701479A (ko) 1987-09-08 1988-09-08 유기 또는 무기 오염물로 오염된 액체 정화방법과 장치 및 반도체층의 용도

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AT226687A AT389099B (de) 1987-09-08 1987-09-08 Verfahren und vorrichtung zur reinigung einer mit organischen und/oder anorganischen fremdstoffen belasteten fluessigkeit, sowie verwendung einer halbleiterschicht
ATA2266/87 1987-09-08

Publications (1)

Publication Number Publication Date
WO1989002418A1 true WO1989002418A1 (fr) 1989-03-23

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PCT/AT1988/000070 WO1989002418A1 (fr) 1987-09-08 1988-09-08 Procede et dispositif de purification de liquides

Country Status (5)

Country Link
EP (1) EP0333787A1 (fr)
JP (1) JPH02501541A (fr)
KR (1) KR890701479A (fr)
AT (1) AT389099B (fr)
WO (1) WO1989002418A1 (fr)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0417847A1 (fr) * 1989-09-15 1991-03-20 ENIRICERCHE S.p.A. Méthode pour la photodégradation catalytique hétérogène des polluants
EP0444180A1 (fr) * 1989-09-15 1991-09-04 Arizona Board Of Regents Oxydation photocatalytique des polluants de l'environnement au moyen d'un solide dans un gaz
EP0537451A1 (fr) * 1991-10-18 1993-04-21 Nec Corporation Procédé pour la décomposition des solvants organochlorés contenus dans les eaux
EP0516671B1 (fr) * 1990-02-26 1994-06-29 Solarchem Enterprises Inc. Traitement d'effluents et de nappes phreatiques pollues
WO1996000190A1 (fr) * 1994-06-27 1996-01-04 Ronald William Arthur Procede et dispositif d'oxydation photocatalytique d'especes chimiques contenues dans l'eau
WO1996004069A1 (fr) * 1994-08-02 1996-02-15 North West Water Group Plc Membrane
WO1997013554A2 (fr) * 1995-10-09 1997-04-17 Spezial-Erden Produktion Rosemann & Partner Gmbh Procede de decomposition de polluants organiques stables
US5865959A (en) * 1995-05-23 1999-02-02 United Technologies Corporation Back-side illuminated organic pollutant removal system
EP1217056A1 (fr) * 2000-12-21 2002-06-26 Johnson Matthey Public Limited Company Matériau photocatalytique
US6645307B2 (en) 1999-12-22 2003-11-11 Reckitt Benckiser (Uk) Limited Photocatalytic compositions and methods
EP1434737A1 (fr) * 2001-04-12 2004-07-07 Gary M. Carmignani Appareil et procede de purification et de desinfection photocatalytique d'eau et eau ultrapure
EP1586539A1 (fr) * 2004-04-13 2005-10-19 Araiza, Rafael Dispositif de traitement d'un milieu liquide et/ou gazeux par radiations uv
CN103611533A (zh) * 2013-12-09 2014-03-05 东南大学 复合催化氧化处理有机废水的装置用催化粒子的制备方法

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JPH057395U (ja) * 1991-07-09 1993-02-02 株式会社加藤機械製作所 光触媒浄水器
JPH057394U (ja) * 1991-07-09 1993-02-02 株式会社加藤機械製作所 光触媒浄水器
JPH0596180A (ja) * 1991-10-03 1993-04-20 Agency Of Ind Science & Technol 固定化光触媒の製造法
WO2004096441A1 (fr) * 2003-04-18 2004-11-11 Lizer Industry Co., Ltd. Module de photocatalyseur, procede de fabrication de ce module et appareil de traitement de nettoyage destine a l'eau a traiter
JP2006181394A (ja) * 2003-04-18 2006-07-13 Raizaa Kogyo Kk 光触媒モジュールとその製造方法及びこれを用いた被処理水の処理装置
NO328918B1 (no) * 2008-08-18 2010-06-14 Sinvent As Fremgangsmate og system for fjerning av organisk materiale i vaesker
KR101700314B1 (ko) * 2009-05-11 2017-01-26 트로잔 테크놀로지스 유체 처리 시스템
JP2017006854A (ja) * 2015-06-22 2017-01-12 株式会社デンソー 排水処理方法および排水処理装置
CN108585105B (zh) * 2018-04-27 2020-10-09 上海理工大学 用于污水灭菌处理的污水消毒装置

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EP0234875A2 (fr) * 1986-02-20 1987-09-02 Nomura Micro Science Co., Ltd. Préparation de l'eau ultrapure par traitement photocatalytique

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EP0234875A2 (fr) * 1986-02-20 1987-09-02 Nomura Micro Science Co., Ltd. Préparation de l'eau ultrapure par traitement photocatalytique

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Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0417847A1 (fr) * 1989-09-15 1991-03-20 ENIRICERCHE S.p.A. Méthode pour la photodégradation catalytique hétérogène des polluants
EP0444180A1 (fr) * 1989-09-15 1991-09-04 Arizona Board Of Regents Oxydation photocatalytique des polluants de l'environnement au moyen d'un solide dans un gaz
EP0444180A4 (en) * 1989-09-15 1992-03-18 Arizona Board Of Regents, Arizona State University Gas-solid photocatalytic oxidation of environmental pollutants
EP0516671B1 (fr) * 1990-02-26 1994-06-29 Solarchem Enterprises Inc. Traitement d'effluents et de nappes phreatiques pollues
EP0537451A1 (fr) * 1991-10-18 1993-04-21 Nec Corporation Procédé pour la décomposition des solvants organochlorés contenus dans les eaux
WO1996000190A1 (fr) * 1994-06-27 1996-01-04 Ronald William Arthur Procede et dispositif d'oxydation photocatalytique d'especes chimiques contenues dans l'eau
WO1996004069A1 (fr) * 1994-08-02 1996-02-15 North West Water Group Plc Membrane
US5865959A (en) * 1995-05-23 1999-02-02 United Technologies Corporation Back-side illuminated organic pollutant removal system
WO1997013554A3 (fr) * 1995-10-09 1997-06-12 Spezial Erden Produktion Rosem Procede de decomposition de polluants organiques stables
WO1997013554A2 (fr) * 1995-10-09 1997-04-17 Spezial-Erden Produktion Rosemann & Partner Gmbh Procede de decomposition de polluants organiques stables
US6645307B2 (en) 1999-12-22 2003-11-11 Reckitt Benckiser (Uk) Limited Photocatalytic compositions and methods
EP1217056A1 (fr) * 2000-12-21 2002-06-26 Johnson Matthey Public Limited Company Matériau photocatalytique
WO2002049478A1 (fr) * 2000-12-21 2002-06-27 Johnson Matthey Public Limited Company Produits photocatalytiques
EP1434737A1 (fr) * 2001-04-12 2004-07-07 Gary M. Carmignani Appareil et procede de purification et de desinfection photocatalytique d'eau et eau ultrapure
EP1434737A4 (fr) * 2001-04-12 2004-11-03 Titan Technologies Appareil et procede de purification et de desinfection photocatalytique d'eau et eau ultrapure
EP1586539A1 (fr) * 2004-04-13 2005-10-19 Araiza, Rafael Dispositif de traitement d'un milieu liquide et/ou gazeux par radiations uv
WO2005100256A1 (fr) * 2004-04-13 2005-10-27 Rafael Araiza Dispositif pour traiter une substance liquide ou gazeuse au moyen de rayons uv
US8153058B2 (en) 2004-04-13 2012-04-10 Rafael Araiza Device for the treatment of a liquid or gaseous medium by means of UV radiation
CN103611533A (zh) * 2013-12-09 2014-03-05 东南大学 复合催化氧化处理有机废水的装置用催化粒子的制备方法

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KR890701479A (ko) 1989-12-20
ATA226687A (de) 1989-03-15
AT389099B (de) 1989-10-10
EP0333787A1 (fr) 1989-09-27

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