WO1987001867A1 - Transistor a cellules multiples - Google Patents

Transistor a cellules multiples Download PDF

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Publication number
WO1987001867A1
WO1987001867A1 PCT/DE1986/000327 DE8600327W WO8701867A1 WO 1987001867 A1 WO1987001867 A1 WO 1987001867A1 DE 8600327 W DE8600327 W DE 8600327W WO 8701867 A1 WO8701867 A1 WO 8701867A1
Authority
WO
WIPO (PCT)
Prior art keywords
transistor
base
cell
cell transistor
thyristor
Prior art date
Application number
PCT/DE1986/000327
Other languages
German (de)
English (en)
Inventor
Gerhard Conzelmann
Karl Nagel
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Priority to JP61504487A priority Critical patent/JPH0744221B2/ja
Priority to DE8686904783T priority patent/DE3675927D1/de
Publication of WO1987001867A1 publication Critical patent/WO1987001867A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the invention is based on a multi-cell transistor according to the preamble of the main claim.
  • Such a multi-cell transistor is already known from DE-PS 24 08 540.
  • the multi-cell transistor consists of a parallel connection of individual transistor cells between a common base, emitter and collector connection rail and is preferably constructed using integrated technology.
  • the particular disadvantage of such a multi-cell transistor is the fact that in the event of a short-circuit defect in a single transistor cell, the entire multi-cell transistor becomes inoperative. Such defects can occur during production due to manufacturing scatter or contamination during manufacture, but they can also be caused during operation by local thermal overload or sudden overvoltage.
  • the transistor cells, which are defective due to the manufacture can be localized by individual remeasurement and can be removed from the assembly by burning through the burning sections.
  • the transistor cells that become defective during the operation of the multicell transistor on the other hand, must be able to separate themselves so that a so-called self-healing effect is achieved.
  • the multi-cell transistor according to the invention with the characterizing features of the main claim has the advantage that a particularly safe automatic removal of a defective transistor cell is achieved. This makes it possible to use wider structures for the basic combustion section in integrated technology and to reduce the requirements for manufacturing accuracy.
  • Particularly advantageous refinements of the invention are specified in the subclaims. It is particularly easy to represent the voltage-disturbed switch by a single Zener diode, which can be represented in integrated technology particularly easily by a transistor operated in the reverse direction, the base and collector of which are connected to one another.
  • a particularly advantageous switching characteristic of the voltage-controlled switch is achieved by using a thyristor. This can be ignited by a zener diode or by a voltage divider. In monolithically integrated technology, this thyristor can be produced particularly simply by connecting a pnp to an npn transistor.
  • Figure 1 shows the basic circuit of a multi-cell transistor according to the invention
  • Figure 2 shows a transistor cell according to the first embodiment
  • Figure 3 shows a transistor cell according to the second embodiment
  • Figure 4 shows a transistor cell according to the third embodiment
  • Figure 5 shows a plan view of a transistor cell according to the first embodiment
  • Figure 6 shows a plan view of a transistor cell according to the second embodiment.
  • an emitter bus 1, base bus 2 and a collector bus 3 of a multi-cell transistor according to the invention is shown, of which, for reasons of simplicity, only a first transistor cell 4 1 and a second transistor cell 42 are shown in Figure 1.
  • Other transistor cells, not shown, are connected in parallel, so that there is a low power distribution on each individual transistor cell of the entire multi-cell transistor.
  • the transistor cell 4 1 includes an end transistor 5, which is connected with its collector to the collector bus 3 and with its emitter via an emitter focal length 6 to the emitter bus 1.
  • Another firing section is connected as a base firing section 7 to the base of the end transistor 5 and via a base resistor 8 to the base busbar 2.
  • a voltage-controlled switch 9 is connected between the connection point of the base combustion path 7 and the base resistor 8 and the emitter bus bar 1.
  • the circuit shown in principle in Figure 1 works in the following manner. Occurs on a transistor cell during operation of the multi-cell transistor Defect, which means a short circuit in the end transistor 5, a high short-circuit current occurs between the collector bus 3 and the emitter bus 1 via the defective end transistor 5, which causes the emitter focal path 6 to cut. Then the base of the defective end transistor 5 is almost pulled to the potential of the collector bus 3 via the collector.
  • the voltage-controlled switch 9 closes automatically, so that a high current flows through the base combustion section 7, which finally also disconnects the base combustion section 7. The defective transistor cell is thus completely detached from the multi-cell transistor network.
  • FIG 2 a first embodiment of the invention is shown, wherein, as in Figure 1, 5 denotes the end transistor, 6 the emitter focal path, 7 the base focal path and 8 the base resistance.
  • the voltage-controlled switch 9 is realized by a thyristor, which in is known to be represented by a pnp transistor 91 in connection with an npn transistor 92.
  • the base of the pnp transistor 91 is connected to the collector of the npn transistor 92 and the collector of the pnp transistor 91 is connected to the base of the npn transistor 92.
  • the emitter of the pnp transistor 91 is located on the base focal length 7 and the emitter of the npn transistor 92 on the emitter bus bar 1.
  • a zener diode 93 is connected with its cathode to the emitter of the pnp transistor 91, its anode is at the base of the npn transistor 92. It is used to ignite the thyristor.
  • the rising potential of the base of the defective end transistor 5 causes the zener diode 93 to enter the current-conducting path stood brought, whereby the thyristor formed by the transistors 91, 92 ignites and the base focal length 7 is cut.
  • FIG. 3 shows a second exemplary embodiment of the invention using a single transistor cell.
  • 5 is the end transistor, 6 the emitter focal path, 7 the base focal path, 9 1 the pnp transistor and 92 the npn transistor of the thyristor formed.
  • the thyristor is now not fired by a zener diode, but by a special design of the base resistor 8, which is formed in FIG. 3 by a base resistor 81 and a divider resistor 82.
  • the divider resistor 82 is connected between the base of the pnp transistor 91 and a divider point of the base resistor 81. Otherwise, the mode of operation of the circuit according to FIG. 3 is equivalent to that according to FIG. 2.
  • a third embodiment of the invention is shown using a single transistor cell.
  • 5 denotes the end transistor
  • 6 the emitter focal length
  • 7 the base focal length
  • 8 the base resistance
  • a single Zener diode 94 now serves as the switch, which is connected between the base combustion path 7 and the emitter bus bar 1 for this purpose.
  • the mode of operation of the circuit according to FIG. 4 is equivalent to that according to the two previous exemplary embodiments.
  • FIG. 5 shows the top view of an integrated transistor cell according to the first exemplary embodiment according to FIG. 2.
  • the wide emitter focal length 6, which can pass a high current, and which are evident in the Ver recognizes the relatively narrow basic focal length 7 straight away.
  • the emitter of the Endtransi stors 5 is marked 51, its base is accordingly marked with 52 and its collector with 53.
  • the base focal path 7 leads to the base resistor 8, the emitter 911 of the pnp transistor 91 of the thyristor being connected to its connection contact.
  • the base of the pnp transistor 91 or the collector of the npn transistor 92 formed at the same time is identified by 912 or 923.
  • the diffusion region with the designation 913 represents the collector of the pnp transistor 93.
  • the emitter is also shown with 921 and the base of the npn transistor 92 is shown with 92.2.
  • the diffusion region 93 is shown in the drawing, which represents the Zener diode of the same name according to FIG. 2.
  • FIG. 6 shows the top view of an integrated circuit according to the second exemplary embodiment according to FIG. 3.
  • the emitter focal path is shown at 6 and the base focal path at 7, which leads to the base resistor 8.
  • the area of the base resistor 8 is identified in more detail by 81, as it corresponds to the divider resistance of the base resistor 8 in FIG.
  • the divider resistor 82 is represented by the epitaxial region with the same name in FIG. 6.
  • the pnp transistor 91 and the npn transistor 92 of the thyristor are shown.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

Le transistor ci-décrit est constitué d'un circuit en parallèle de différentes cellules (41, 42) de transistor permettant de répartir la puissance. Pour couper automatiquement les cellules défectueuses, sont prévues des sections-fusibles (6, 7) qui, en cas de court-circuit, isolent lesdites cellules de l'ensemble. Un interrupteur (9) commandé en tension est prévu pour améliorer la coupure par la section-fusible de base (7).
PCT/DE1986/000327 1985-09-11 1986-08-25 Transistor a cellules multiples WO1987001867A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP61504487A JPH0744221B2 (ja) 1985-09-11 1986-08-25 マルチセルトランジスタ
DE8686904783T DE3675927D1 (de) 1985-09-11 1986-08-25 Multizellentransistor.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP3532383.3 1985-09-11
DE19853532383 DE3532383A1 (de) 1985-09-11 1985-09-11 Multizellentransistor

Publications (1)

Publication Number Publication Date
WO1987001867A1 true WO1987001867A1 (fr) 1987-03-26

Family

ID=6280659

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1986/000327 WO1987001867A1 (fr) 1985-09-11 1986-08-25 Transistor a cellules multiples

Country Status (5)

Country Link
US (1) US4742425A (fr)
EP (1) EP0236352B1 (fr)
JP (1) JPH0744221B2 (fr)
DE (2) DE3532383A1 (fr)
WO (1) WO1987001867A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0326780A2 (fr) * 1988-01-30 1989-08-09 Robert Bosch Gmbh Transistor de puissance
WO1991018417A1 (fr) * 1990-05-23 1991-11-28 North Carolina State University Circuit integre de puissance avec elimination automatique des elements defectueux
FR2686737A1 (fr) * 1992-01-29 1993-07-30 Sgs Thomson Microelectronics Composant de protection semiconducteur auto-protege.

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5446310A (en) * 1992-06-08 1995-08-29 North Carolina State University Integrated circuit power device with external disabling of defective devices and method of fabricating same
US5392187A (en) * 1992-08-12 1995-02-21 North Carolina State University At Raleigh Integrated circuit power device with transient responsive current limiting means
DE4435255A1 (de) * 1994-10-01 1996-04-04 Abb Management Ag Verfahren zur Fehlerbehebung in einer Stromrichterschaltungsanordnung
US5721144A (en) * 1995-04-27 1998-02-24 International Business Machines Corporation Method of making trimmable modular MOSFETs for high aspect ratio applications
EP1246276A3 (fr) 2001-03-26 2004-01-14 Wilson Greatbatch Ltd. Elément de connection fusible
CA2379009C (fr) 2001-03-27 2012-05-22 Wilson Greatbatch Ltd. Fusible a conducteur
US7679426B2 (en) * 2005-01-19 2010-03-16 Hewlett-Packard Development Company, L.P. Transistor antifuse device
US8390972B2 (en) * 2007-04-17 2013-03-05 Hamilton Sundstrand Corporation Secondary protection approach for power switching applications
US10600902B2 (en) 2008-02-13 2020-03-24 Vishay SIliconix, LLC Self-repairing field effect transisitor
EP2923375A4 (fr) * 2012-11-26 2016-07-20 D3 Semiconductor LLC Architecture de dispositif et procédé pour améliorer la précision de dispositifs à semi-conducteur verticaux
FR3084965B1 (fr) * 2018-08-10 2020-10-30 Commissariat Energie Atomique Transistor a effet de champ

Citations (4)

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Publication number Priority date Publication date Assignee Title
GB1131210A (en) * 1966-09-16 1968-10-23 Int Standard Electric Corp Improvements in and relating to integrated circuit logic matrices
DE2502452A1 (de) * 1974-01-22 1975-07-24 Raytheon Co Schmelzsicherungseinrichtung und verfahren zu ihrer herstellung
FR2262409A1 (fr) * 1974-02-22 1975-09-19 Bosch Gmbh Robert
US4354217A (en) * 1980-07-07 1982-10-12 Burroughs Corporation Automatic power disconnect system for wafer scale integrated circuits

Family Cites Families (10)

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US3258704A (en) * 1966-06-28 Signal si
US2925548A (en) * 1958-02-10 1960-02-16 Sorensen & Company Inc Protective device for transistor regulators
DE1588336C3 (de) * 1967-04-12 1978-05-03 W.H. Joens & Co Gmbh, 4000 Duesseldorf Elektrischer Zweipunktregler mit einem Leitungsschutz
JPS5239717Y2 (fr) * 1972-04-14 1977-09-08
JPS55102090U (fr) * 1979-01-10 1980-07-16
SU907672A2 (ru) * 1980-05-26 1982-02-23 Специальное Конструкторское Бюро Литейных Автоматических Линий Устройство дл защиты параллельно включенных полупроводниковых триодов
US4412265A (en) * 1981-11-27 1983-10-25 Tokheim Corporation Intrinsic barrier
JPS59165971A (ja) * 1983-03-11 1984-09-19 Mitsubishi Electric Corp トランジスタインバ−タの保護方法
US4562509A (en) * 1984-03-05 1985-12-31 Termofrost Sweden Ab Safety switch
DE3422132C1 (de) * 1984-06-14 1986-01-09 Texas Instruments Deutschland Gmbh, 8050 Freising Schutzschaltungsanordnung

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1131210A (en) * 1966-09-16 1968-10-23 Int Standard Electric Corp Improvements in and relating to integrated circuit logic matrices
DE2502452A1 (de) * 1974-01-22 1975-07-24 Raytheon Co Schmelzsicherungseinrichtung und verfahren zu ihrer herstellung
FR2262409A1 (fr) * 1974-02-22 1975-09-19 Bosch Gmbh Robert
US4354217A (en) * 1980-07-07 1982-10-12 Burroughs Corporation Automatic power disconnect system for wafer scale integrated circuits

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0326780A2 (fr) * 1988-01-30 1989-08-09 Robert Bosch Gmbh Transistor de puissance
DE3802794A1 (de) * 1988-01-30 1989-08-10 Bosch Gmbh Robert Leistungstransistor
EP0326780A3 (fr) * 1988-01-30 1990-10-17 Robert Bosch Gmbh Transistor de puissance
WO1991018417A1 (fr) * 1990-05-23 1991-11-28 North Carolina State University Circuit integre de puissance avec elimination automatique des elements defectueux
FR2686737A1 (fr) * 1992-01-29 1993-07-30 Sgs Thomson Microelectronics Composant de protection semiconducteur auto-protege.
EP0554195A1 (fr) * 1992-01-29 1993-08-04 STMicroelectronics S.A. Composant de protection semiconducteur auto-protégé

Also Published As

Publication number Publication date
EP0236352A1 (fr) 1987-09-16
EP0236352B1 (fr) 1990-11-28
US4742425A (en) 1988-05-03
DE3675927D1 (de) 1991-01-10
JPS63501184A (ja) 1988-04-28
JPH0744221B2 (ja) 1995-05-15
DE3532383A1 (de) 1987-03-19

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