WO1981003669A1 - Procede de fabrication d'une couche mince a structure orientee, dispositif pour la mise en oeuvre de ce procede et produits obtenus - Google Patents

Procede de fabrication d'une couche mince a structure orientee, dispositif pour la mise en oeuvre de ce procede et produits obtenus Download PDF

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Publication number
WO1981003669A1
WO1981003669A1 PCT/CH1981/000063 CH8100063W WO8103669A1 WO 1981003669 A1 WO1981003669 A1 WO 1981003669A1 CH 8100063 W CH8100063 W CH 8100063W WO 8103669 A1 WO8103669 A1 WO 8103669A1
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une
par
couche
que
dispositif
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PCT/CH1981/000063
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German (de)
English (en)
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M Roche
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Science & Techn Ets
M Roche
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Publication of WO1981003669A1 publication Critical patent/WO1981003669A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/584—Non-reactive treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/453—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Thermal Sciences (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Dans ce procede, on applique a la couche en cours de depot et/ou de refroidissement un champ magnetique et/ou electrique, par exemple au moyen de pieces polaires (82). Le dispositif comporte en outre des moyens de depot de la couche mince (80), des moyens de depots et de traitement complementaires (73, 83 et 84) permettant notamment la fabrication de photopiles.
PCT/CH1981/000063 1980-06-13 1981-06-09 Procede de fabrication d'une couche mince a structure orientee, dispositif pour la mise en oeuvre de ce procede et produits obtenus WO1981003669A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CH4565/80 1980-06-13
CH456580 1980-06-13
CH495280 1980-06-27
CH668780 1980-09-06

Publications (1)

Publication Number Publication Date
WO1981003669A1 true WO1981003669A1 (fr) 1981-12-24

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ID=27174894

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CH1981/000063 WO1981003669A1 (fr) 1980-06-13 1981-06-09 Procede de fabrication d'une couche mince a structure orientee, dispositif pour la mise en oeuvre de ce procede et produits obtenus

Country Status (2)

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EP (1) EP0053150A1 (fr)
WO (1) WO1981003669A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0142176A1 (fr) * 1983-10-24 1985-05-22 George Gergely Merkl Carbone cubique

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB749293A (en) * 1954-03-17 1956-05-23 Ohio Commw Eng Co Method and apparatus for deposition of materials by thermal decomposition
DE1193022B (de) * 1954-05-18 1965-05-20 Siemens Ag Verfahren zur Herstellung von reinstem Silicium
US3290567A (en) * 1960-09-23 1966-12-06 Technical Ind Inc Controlled deposition and growth of polycrystalline films in a vacuum
US3350219A (en) * 1966-07-07 1967-10-31 Stackpole Carbon Co Evaporating metal employing porous member
US3463663A (en) * 1965-05-07 1969-08-26 Kennecott Copper Corp Deposition of thin films
US3463667A (en) * 1965-12-03 1969-08-26 Kennecott Copper Corp Deposition of thin films
FR2018482A1 (fr) * 1968-09-20 1970-05-29 Asea Ab
FR2036831A1 (en) * 1969-04-03 1970-12-31 Isofilm International Reconstituting matter from ionised vapour - state
FR2039996A5 (en) * 1969-03-26 1971-01-15 Venker Hans Crystallographically oriented surface - coatings
US3885520A (en) * 1974-03-08 1975-05-27 John F Krumme Vapor deposition apparatus with rotatable ring mask
US4152535A (en) * 1976-07-06 1979-05-01 The Boeing Company Continuous process for fabricating solar cells and the product produced thereby
EP0003425A1 (fr) * 1978-01-26 1979-08-08 Sotec Corporation Procédé de production d'une couche cristalline d'un composé intermétallique paramagnétique du type sodium-thallium et appareil pour réaliser ce procédé
DE3008206A1 (de) * 1979-03-07 1980-09-11 Arbed Verfahren und anlage zur vermeidung des bluehens bei der metallisierung von stahlblechen

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB749293A (en) * 1954-03-17 1956-05-23 Ohio Commw Eng Co Method and apparatus for deposition of materials by thermal decomposition
DE1193022B (de) * 1954-05-18 1965-05-20 Siemens Ag Verfahren zur Herstellung von reinstem Silicium
US3290567A (en) * 1960-09-23 1966-12-06 Technical Ind Inc Controlled deposition and growth of polycrystalline films in a vacuum
US3463663A (en) * 1965-05-07 1969-08-26 Kennecott Copper Corp Deposition of thin films
US3463667A (en) * 1965-12-03 1969-08-26 Kennecott Copper Corp Deposition of thin films
US3350219A (en) * 1966-07-07 1967-10-31 Stackpole Carbon Co Evaporating metal employing porous member
FR2018482A1 (fr) * 1968-09-20 1970-05-29 Asea Ab
FR2039996A5 (en) * 1969-03-26 1971-01-15 Venker Hans Crystallographically oriented surface - coatings
FR2036831A1 (en) * 1969-04-03 1970-12-31 Isofilm International Reconstituting matter from ionised vapour - state
US3885520A (en) * 1974-03-08 1975-05-27 John F Krumme Vapor deposition apparatus with rotatable ring mask
US4152535A (en) * 1976-07-06 1979-05-01 The Boeing Company Continuous process for fabricating solar cells and the product produced thereby
EP0003425A1 (fr) * 1978-01-26 1979-08-08 Sotec Corporation Procédé de production d'une couche cristalline d'un composé intermétallique paramagnétique du type sodium-thallium et appareil pour réaliser ce procédé
DE3008206A1 (de) * 1979-03-07 1980-09-11 Arbed Verfahren und anlage zur vermeidung des bluehens bei der metallisierung von stahlblechen

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM Technical Disclosure Bulletin, Vol. 21, No. 9, published in February 1979, J.G. DROP "Use of a Magnetic Field to Adjust the Stoechiometry of Plasma-Deposited Thin Film", see page 3760 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0142176A1 (fr) * 1983-10-24 1985-05-22 George Gergely Merkl Carbone cubique

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EP0053150A1 (fr) 1982-06-09

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