GB749293A - Method and apparatus for deposition of materials by thermal decomposition - Google Patents
Method and apparatus for deposition of materials by thermal decompositionInfo
- Publication number
- GB749293A GB749293A GB781254A GB781254A GB749293A GB 749293 A GB749293 A GB 749293A GB 781254 A GB781254 A GB 781254A GB 781254 A GB781254 A GB 781254A GB 749293 A GB749293 A GB 749293A
- Authority
- GB
- United Kingdom
- Prior art keywords
- chamber
- carbonyl
- workpiece
- anode
- outlet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
Abstract
749,293. Coating metals. COMMONWEALTH ENGINEERING CO. OF OHIO. March 17, 1954, No. 7812/54. Class 82(2). Workpieces are coated with metals by subjecting them in a chamber to the action of a gaseous metal carbonyl in a high voltage unidirectional electric field, the work piece forming the cathode. The outlet of the chamber may constitute the anode. A hollow member containing radium or uranium may be inserted into the gas stream to ionise the gas before entry into the chamber. The workpiece may be heated to the decomposition temperature of the carbonyl. Coating metals include Cr, Fe W, Co, Mo, Re, Ni, and may be deposited on e.g. the following bases : steel, Cu or brass, cast iron, Al, Mg. The carbonyl is admitted to the chamber 1 through a pipe 2. The workpiece 6 is supported on an electric heater 4 by electrically insulating members 15 and is connected at 7 to the negative pole of a D.C. supply. The outlet 3 of the chamber forms the anode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB781254A GB749293A (en) | 1954-03-17 | 1954-03-17 | Method and apparatus for deposition of materials by thermal decomposition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB781254A GB749293A (en) | 1954-03-17 | 1954-03-17 | Method and apparatus for deposition of materials by thermal decomposition |
Publications (1)
Publication Number | Publication Date |
---|---|
GB749293A true GB749293A (en) | 1956-05-23 |
Family
ID=9840218
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB781254A Expired GB749293A (en) | 1954-03-17 | 1954-03-17 | Method and apparatus for deposition of materials by thermal decomposition |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB749293A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3293074A (en) * | 1963-11-05 | 1966-12-20 | Siemens Ag | Method and apparatus for growing monocrystalline layers on monocrystalline substrates of semiconductor material |
WO1981003669A1 (en) * | 1980-06-13 | 1981-12-24 | Science & Techn Ets | Method for manufacturing a thin layer with orientated structure,device for implementing such method and products obtained thereby |
-
1954
- 1954-03-17 GB GB781254A patent/GB749293A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3293074A (en) * | 1963-11-05 | 1966-12-20 | Siemens Ag | Method and apparatus for growing monocrystalline layers on monocrystalline substrates of semiconductor material |
WO1981003669A1 (en) * | 1980-06-13 | 1981-12-24 | Science & Techn Ets | Method for manufacturing a thin layer with orientated structure,device for implementing such method and products obtained thereby |
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