WO1980000512A1 - Pont redresseur a semi-conducteurs - Google Patents

Pont redresseur a semi-conducteurs Download PDF

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Publication number
WO1980000512A1
WO1980000512A1 PCT/DE1979/000082 DE7900082W WO8000512A1 WO 1980000512 A1 WO1980000512 A1 WO 1980000512A1 DE 7900082 W DE7900082 W DE 7900082W WO 8000512 A1 WO8000512 A1 WO 8000512A1
Authority
WO
WIPO (PCT)
Prior art keywords
conductor
semiconductor
rectifier
conductor parts
parts
Prior art date
Application number
PCT/DE1979/000082
Other languages
German (de)
English (en)
Inventor
R Maier
H Schaefer
Original Assignee
Semikron Gleichrichterbau
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron Gleichrichterbau filed Critical Semikron Gleichrichterbau
Priority to BR7908971A priority Critical patent/BR7908971A/pt
Publication of WO1980000512A1 publication Critical patent/WO1980000512A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode

Definitions

  • the invention relates to a semiconductor rectifier arrangement in a bridge circuit, in which the rectifier elements are attached to the ends of conductor parts of a conductor part structure formed from strip or wire-shaped conductor material, are contacted with the conductor parts and are enclosed in an envelope.
  • an advantageous embodiment of this method was that the legs of the metal bracket made of resilient, wire-shaped conductor material spread and formed at their free ends and directed against each other so that they touch when merging, and that the Metal clips are inserted into the slot-shaped recesses of a holding device in a self-retaining manner so that the
  • Semiconductor tablets can be arranged between the protruding, touching ends.
  • Rectifier arrangements with several semiconductor tablets and consequently also with several metal brackets require an undesirably high outlay in terms of devices and method steps for construction and interconnection.
  • a method for producing semiconductor rectifiers is known from DE-AS 19 07 075. Thereafter, periodically recurring geometric structures are formed from band-shaped conductor material within an edge zone enclosing them and with sections which serve as carrier bodies or as contact pieces or current conductor parts and are arranged in an interlocking manner. Furthermore, the current conductor points are attached from the center of the structure, running parallel to one another and are at the same time retaining webs between the structure and between the edge zone surrounding the structure. Then the semiconductor tablets are added and contacted at the corresponding contact points, and the arrangements thus formed are encapsulated and separated from the edge zone of the conductor material by separating the support webs.
  • DE-PS 19 16 554 discloses a method for producing semiconductor rectifier arrangements. There, essentially comb-shaped structures are formed from band-shaped conductor material, and contact points are produced by overlapping arrangement of conductor parts, at which semiconductor tablets are interposed in a predetermined electrical orientation. The conductor parts are arranged perpendicular to a common connecting web which serves as a transport strip and at the same time forms a longitudinal edge zone. Another base conductor part common to all structures is the other longitudinal edge zone.
  • the disadvantages of this known method also consist in a high expenditure of material for the intended conductor part structures, in a high expenditure of time for attaching the semiconductor tablets to the conductor parts, and in the danger that the semiconductor tablets are not added in the circuit-related electrical orientation.
  • the invention was based on the object of creating semiconductor small rectifier connections in a bridge circuit which have as few, particularly cheap ones as possible
  • Parts on iron, compared to known designs can be produced more efficiently and a perfect loading Ensure packaging with semiconductor tablets.
  • the solution to the problem in the semiconductor rectifier arrangement mentioned at the outset is that it has two semiconductor bodies, each of which consists of the number of integrated rectifier elements determined by the number of AC connections of the circuit, that each semiconductor body has at least one trench-shaped depression which differs from the one Main surface extends through at least one doped, layered zone and through the adjacent pn junction, which can be loaded in the reverse direction, into which the circuit-related number of rectifier elements is divided so that the semiconductor bodies are mutually arranged so that the circuit-related rectifier elements of both semiconductor bodies are connected in the shortest possible time Distance are each connected by the end of a conductor part, and that the conductor parts are formed, arranged and connected at one end to the rectifier elements that at their free end there is a mutual distance determined by the technical use.
  • the subject matter of the invention is particularly advantageous.
  • a further development of the invention consists in that a semiconductor body with three layers of different conductivity and an intermediate pn junction and a semiconductor body with four layers of alternately different conductivity types are provided.
  • the conductor parts can be made from a flat conductor part structure and arranged in a row, or can be provided from two flat conductor part structures and in two rows. In this case, the mutual spacing of the conductor parts determined by the technical use is advantageously given between all conductor parts.
  • An advantageous embodiment of the object of the invention is that the semiconductor bodies are arranged at a distance axially one behind the other and with the same side in a plane, and that the conductor parts are each deformed and arranged out of the plane of their conductor part structure so that two conductor parts are in contact with their Extend each end of two rectifier elements located one behind the other and connect them, and each end of a further conductor part contacts the continuous contact surface of a semiconductor body.
  • Another advantageous embodiment is characterized in that the semiconductor bodies with their surface (s) having the recess (s) are mutually spaced in mirror image, and that one end of each conductor part contacts opposite rectifier elements and one end of each conductor part contacts the continuous contact surface of a Semiconductor body is connected.
  • the contacted and the free conductor part ends can each be arranged in the same or different directions.
  • FIGS. 1 to 9 Based on the exemplary embodiments shown in FIGS. 1 to 9, the structure, mode of operation and Manufacture of the subject of the invention shown and explained.
  • FIGS. 1a and 1b each show a semiconductor body divided into two integrated rectifier elements by a recess, with three layer-shaped zones and an intermediate pn junction.
  • FIGS. 2a and 2b show, in perspective or in plan view, the two semiconductor bodies according to FIGS. 1a and 1b with matching sides in a plane one behind the other and firmly connected to conductor parts arranged on two connecting straight lines.
  • the conductor parts arranged on a connecting straight line are still referred to as lying in series and are each section of a e.g. by punching band-shaped conductor material or by lining up metal brackets manufactured part structure.
  • FIG. 3a shows the semiconductor bodies one behind the other with conductor parts arranged in a row.
  • FIG. 3b shows a special shape of a conductor part according to FIG. 3a for fixing a semiconductor body.
  • Figures 4 to 9 represent designs in which the semiconductor bodies are each arranged in mirror image with their side divided by a recess and in which two conductor parts contact the two inner opposite surfaces and two conductor parts each contact an outer surface of each semiconductor body.
  • FIG. 4 shows such an arrangement in a top view of the end face of the two semiconductor bodies and with a contacting thereof by conductor parts arranged in a row.
  • FIGS. 5a and 5b each show the semiconductor bodies in different assignments to their conductor parts arranged in two rows.
  • FIG. 6 shows the semiconductor body in a top view of the left side surface of its arrangement according to FIG. 4 and contacted with conductor parts attached in a row.
  • FIGS. 7a and 7b the semiconductor bodies are also shown in this side view, but in different spatial positions between rows of conductor parts.
  • FIGS. 8 and 9 each show the semiconductor bodies in a top view of the lower of the two outer contact surfaces of the arrangement according to FIG. 4 and connected to conductor parts arranged in one row or with two rows.
  • the semiconductor bodies 1 and 2 according to FIGS. 1a and 1b consist of n-conducting and p-conducting starting material, each with a sequence of layer-shaped zones 11, 12, 13 produced by known diffusion steps in a p + nn + structure or 21, 22, 23 in n + pp + structure.
  • Contact layers 16, 17 and 26, 27 are applied to the outer zones, and both semiconductor bodies are each through a trench-shaped recess 15 and 25, which extends from the outer surface closest to the pn junction through the adjoining conductivity zone and the adjacent pn Transition extends through, divided into two rectifier elements 10, 10 and 20, 20, respectively. If both semiconductor bodies are provided from the same starting material, the depression extends through the two conductivity zones of the same name and the adjacent pn junction.
  • each semiconductor body determines the structure of rectifier arrangements according to the invention. Their surface area depends on the intended current carrying capacity. On its non-subdivided contact surface, each semiconductor body forms a branch point of the circuit provided, at which e.g. as shown, two elements are connected in the same electrical polarity.
  • semiconductor bodies with one depression each for a single-phase bridge circuit i.e. for a circuit with two AC connections
  • two semiconductor bodies, each with two depressions are therefore required for a three-phase bridge circuit.
  • the semiconductor bodies 1, 2 are arranged at a distance axially one behind the other and with a matching side in one plane.
  • the zones of the semiconductor bodies and their contact layers 16, 17 and 26, 27 are not shown.
  • the two rectifier elements which are spatially one behind the other, are contacted by the conductor sections 5a and 6a.
  • the continuous contact surface of the semiconductor body 1 is firmly connected to the conductor part 8a and the continuous contact surface of the semiconductor body 2 is connected to the conductor part 7a.
  • the conductor parts 5a, 6a serve as an AC connection conductor
  • the conductor parts 7a, 8a as a DC connection conductor for semiconductor bodies. They form the free ends of the conductor parts 5 to 8.
  • the conductor parts 5, 6 are at a mutual spacing m parts of a first comb-shaped structure of sections of a wire or strip-shaped conductor material that are essentially parallel to one another and determined by the use of the rectifier arrangement, and the conductor parts 7, 8 corresponding parts of a corresponding second structure arranged at a distance m from the first.
  • the conductor parts 5 to 8 are at their ends 5a to 8a parallel offset and arranged in such a way that there is space for arranging the semiconductor bodies in a row.
  • the correct electrical orientation of the semiconductor bodies is ensured by assigning the easily recognizable, subdivided side of the semiconductor bodies to the mutually parallel and equally long conductor-part ends 5a, 6a.
  • the semiconductor bodies 1, 2 are shown somewhat offset from one another in a plan view of their end face, corresponding to a view from above of the arrangement in FIG. 2a. This is to indicate their mutual spatial position.
  • the smaller thickness of the semiconductor body 1, 2 compared to the usually provided measure of the distance between the conductor parts 5 to 8 (m) requires a corresponding deformation of the conductor part ends out of the plane of the conductor part rows indicated by the dash-dotted lines.
  • Two conductor parts can be used one row (5a, 6a) serve as an AC connection conductor (as shown) and two conductor parts of the other row serve as a DC connection conductor. However, a different assignment of the conductor parts can also be provided.
  • the mutual spacing of the semiconductor bodies 1, 2 is determined by the condition of sufficient flashover strength between the continuous contact sides (17.27).
  • FIG. 3a shows the semiconductor bodies 1, 2 in the same mutual position, but in contact with the ends 35a to 38a of conductor parts arranged in a row at a mutual distance m.
  • the conductor part level is also the center level of the semiconductor body.
  • the conductor parts can also be connected to the respective contact surfaces in a different order.
  • the conductor parts can be designed and attached in such a way that the conductor part ends, as shown, have the same direction or that e.g. the ends contacting two rectifier elements are directed differently from the ends contacting a semiconductor body. Furthermore, the conductor parts 5, 6 can independently have different directions from the conductor parts 7, 8.
  • the conductor parts 37a, 38a can have a special arcuate configuration 38b to avoid a change in position of the semiconductor bodies within their plane.
  • the two semiconductor bodies 1, 2, with their contact areas given by subdivision are arranged in mirror image at a distance from one another.
  • the contact surfaces which are thereby “inside” are each connected via a conductor part 45a, 46a, which runs essentially parallel to the recesses 15, 25.
  • the conductor parts 47a, 48a make contact with the two outer contact surfaces, ie in each case a common branching point of two rectifier elements.
  • the conductor part ends 45a to 48a are assigned to conductor parts of a plane which, as shown, can correspond to the middle plane between the semiconductor bodies.
  • the contact surfaces of the semiconductor bodies can also be connected to the conductor parts in a different order.
  • FIGS. 5a, 5b show other exemplary embodiments with this arrangement of the semiconductor bodies and with conductor part ends from two conductor part levels.
  • the assignment of the conductor part ends 55a to 58a can also be in a different order, in that a conductor part end (55a, 56a) contacts two inner surfaces and the second conductor part end (57a, 58a) of each row is connected to an outer surface.
  • the deformation of the conductor part ends can be limited to one level, corresponding to the formation of the conductor part ends 55b to 58b in FIG. 5b.
  • the conductor part ends connected to the semiconductor bodies as well as the invisible conductor parts each have essentially the same direction in the three figures.
  • FIG. 4 Another advantageous construction of the subject matter of the invention is shown in FIG.
  • the two Semiconductor bodies in the arrangement according to FIG. 4 are shown in a top view of the left side surfaces.
  • the conductor parts are in a row on one level.
  • the conductor part ends 65a, 66a are attached in the opposite direction between the opposing rectifier elements, the further conductor part ends 67a, 68a are led to the continuous contact surfaces, and all conductor parts run in the same direction at their free end.
  • FIGS. 7a, 7b Other designs with this arrangement of the semiconductor bodies 1, 2 are shown in FIGS. 7a, 7b, each using conductor parts in two planes.
  • the interconnected conductor ends 75a, 76a are attached in the same direction, but differently but mutually in agreement, the conductor ends 77a, 78a.
  • the free ends of the conductor parts run in the same direction.
  • FIG. 7b corresponds with respect to the position and direction of the conductor part ends and the conductor parts to the structure according to FIG. 6, but conductor parts from two levels are provided.
  • FIGS. 8 and 9 show designs of the subject matter of the invention, in which the semiconductor bodies 1, 2 in the arrangement according to FIG. 4 are shown in a top view of the lower outer contact surface.
  • the center plane between the semiconductor bodies 1, 2 is perpendicular to the one conductor part plane.
  • the middle of the four conductor parts (85a, 86a) lying in series are hook-shaped in the opposite direction between the semiconductor bodies and contacted with opposite rectifier elements.
  • the two outer conductor parts the arrangement (87a, 88a) are perpendicular to the ends 85a, 86 and mutually opposite, and are contacted with a semiconductor body at a right angle to the recesses 15, 25.
  • the distance between the conductor parts in the area of their free ends can be 5 mm or a multiple thereof in accordance with the grid dimension in printed circuit boards.
  • the semiconductor bodies 1, 2 arranged according to FIG. 8 are contacted with conductor parts from two conductor part levels.
  • the conductor-part ends 95a, 96a provided between the rectifier elements are offset in opposite directions and the two further conductor-part ends 97a, 98a are alternately and correspondingly attached. All ends of the conductor parts can be produced particularly simply by appropriately bending the conductor parts at right angles, which all have the same direction, even in the construction according to FIG. 8.
  • the conductor part ends 85a to 88a or 95a or 98a can also be arranged in a different order and therefore in a different mutual direction. Furthermore, the conductor parts can preferably have mutually different directions, preferably in accordance with their electrical connection regulations.
  • two output disks made of n-conducting and p-conducting semiconductor material are used to manufacture arrangements according to the invention.
  • diffusion processes known per se these are each provided with a sequence of layer-shaped zones of different conductivity and at least one pn junction which is to be mixed in, and then on both sides with a coating of a readily solderable contact metal.
  • the coatings can be made of aluminum and silver, for example Nickel and gold exist.
  • depressions are made on the surface of the output wafers closest to the pn junction and then the wafers are divided into the semiconductor body.
  • the conductor part structures in the form of flat comb structures can be e.g. by punching from strip-shaped conductor material or by stringing metal brackets from round wire in larger numbers and in one device. In this way, it is also possible to produce structures which, by bending, have a multiplicity of conductor parts at two parallel conductor part planes which have a predetermined spacing.
  • the conductor parts provided with the appropriate shape for each arrangement are produced in these conductor part structures. This results in periodically recurring zones with the respective number of conductor parts obtained by bending and / or deforming for introducing the semiconductor bodies in circuit-related electrical and spatial assignment.
  • the easily recognizable surface of each semiconductor body, divided by at least one depression, ensures the correct electrical orientation in a particularly simple manner.
  • the semiconductor bodies have been introduced into the conductor part structure (s), which are only limited in length by manufacturing aspects. a larger number is carried out simultaneously by soldering, for example by dipping or in a continuous furnace, then encapsulating and separating the arrangements produced from the transport or connecting strip of the structure or from the device for holding metal parts.
  • the advantages of the subject matter of the invention consist in the fact that the semiconductor bodies can be optimally economically produced in large quantities regardless of the starting material and already have a label for their circuitry processing, so that their connection between the conductor part ends has already been surprisingly simple. Furthermore, with the conductor part structures, bending processes at free ends can be carried out much more efficiently and universally than the known method steps for cranking and parallel displacing of conductor part sections. Finally, the subject matter of the invention allows a variety of designs for desired applications, generally in an embodiment for at least semi-automatic mass production.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Rectifiers (AREA)
  • Current-Collector Devices For Electrically Propelled Vehicles (AREA)

Abstract

Le pont redresser a semi-conducteurs qui comporte des elements redresseurs (1, 2) montes sur l'extremite de conducteurs en forme de bande ou de fil et enfermes avec ceux-ci dans une enveloppe, presente deux corps semi-conducteurs (1, 2) ayant chacun un nombre d'elements integres defini par le montage. Chaque corps semi-conducteur comporte au moins une jonction pn et est divise en un nombre prevu d'elements redresseurs par au moins un renforcement d'une surface principale. Par une disposition relative correspondante des corps semi-conducteurs et des conducteurs, les elements redresseurs sont relies avec l'intervalle le plus faible possible selon le montage, au moyen d'une extremite (5a, 6a, 7a, 8a) d'un conducteur, et les conducteurs sont formes et disposes de telle maniere que leurs extremites libres (5, 6, 7, 8) presentent un ecart relatif (m) fonction de l'application.
PCT/DE1979/000082 1978-08-26 1979-08-13 Pont redresseur a semi-conducteurs WO1980000512A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
BR7908971A BR7908971A (pt) 1978-08-26 1979-08-13 Disposicao retificadora de semicondutores em ligacao em ponte

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19782837332 DE2837332A1 (de) 1978-08-26 1978-08-26 Halbleitergleichrichteranordnung in brueckenschaltung
DE2837332 1978-08-26

Publications (1)

Publication Number Publication Date
WO1980000512A1 true WO1980000512A1 (fr) 1980-03-20

Family

ID=6047987

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1979/000082 WO1980000512A1 (fr) 1978-08-26 1979-08-13 Pont redresseur a semi-conducteurs

Country Status (5)

Country Link
EP (1) EP0019624A1 (fr)
JP (1) JPS55500776A (fr)
DE (1) DE2837332A1 (fr)
GB (1) GB2057189B (fr)
WO (1) WO1980000512A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2518788A1 (fr) * 1981-12-23 1983-06-24 Thomson Csf Dispositif a resistance dependant de la tension, son procede de fabrication et sa mise en oeuvre dans un ecran de visualisation a commande electrique

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3348105A (en) * 1965-09-20 1967-10-17 Motorola Inc Plastic package full wave rectifier
US3463970A (en) * 1966-10-26 1969-08-26 Gen Electric Integrated semiconductor rectifier assembly
GB1165100A (en) * 1967-04-28 1969-09-24 Siemens Ag Electrical Components having Terminal Connecting Portions for Insertion in Mounting Boards
US3654527A (en) * 1970-07-27 1972-04-04 Gen Electric Unitary full wave inverter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL262934A (fr) * 1960-03-30

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3348105A (en) * 1965-09-20 1967-10-17 Motorola Inc Plastic package full wave rectifier
US3463970A (en) * 1966-10-26 1969-08-26 Gen Electric Integrated semiconductor rectifier assembly
GB1165100A (en) * 1967-04-28 1969-09-24 Siemens Ag Electrical Components having Terminal Connecting Portions for Insertion in Mounting Boards
US3654527A (en) * 1970-07-27 1972-04-04 Gen Electric Unitary full wave inverter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2518788A1 (fr) * 1981-12-23 1983-06-24 Thomson Csf Dispositif a resistance dependant de la tension, son procede de fabrication et sa mise en oeuvre dans un ecran de visualisation a commande electrique

Also Published As

Publication number Publication date
DE2837332A1 (de) 1980-03-06
GB2057189B (en) 1983-04-20
GB2057189A (en) 1981-03-25
EP0019624A1 (fr) 1980-12-10
JPS55500776A (fr) 1980-10-16

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