USRE30883E - Method of producing synthetic quartz glass - Google Patents
Method of producing synthetic quartz glass Download PDFInfo
- Publication number
- USRE30883E USRE30883E US06/121,078 US12107880A USRE30883E US RE30883 E USRE30883 E US RE30883E US 12107880 A US12107880 A US 12107880A US RE30883 E USRE30883 E US RE30883E
- Authority
- US
- United States
- Prior art keywords
- free
- quartz glass
- hydrogen
- fluorine
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000001301 oxygen Substances 0.000 claims abstract description 26
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 26
- 239000007789 gas Substances 0.000 claims abstract description 23
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 20
- 239000011737 fluorine Substances 0.000 claims abstract description 20
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000001257 hydrogen Substances 0.000 claims abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 7
- 230000006698 induction Effects 0.000 claims abstract description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 18
- AFYPFACVUDMOHA-UHFFFAOYSA-N chlorotrifluoromethane Chemical compound FC(F)(F)Cl AFYPFACVUDMOHA-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 4
- 229910003910 SiCl4 Inorganic materials 0.000 claims description 3
- WOLDFAYTXKMDAQ-UHFFFAOYSA-N chlorotrifluorosilane Chemical compound F[Si](F)(F)Cl WOLDFAYTXKMDAQ-UHFFFAOYSA-N 0.000 claims description 2
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 claims description 2
- 229910021645 metal ion Inorganic materials 0.000 claims description 2
- PPDADIYYMSXQJK-UHFFFAOYSA-N trichlorosilicon Chemical compound Cl[Si](Cl)Cl PPDADIYYMSXQJK-UHFFFAOYSA-N 0.000 claims description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims 7
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- QPAXMPYBNSHKAK-UHFFFAOYSA-N chloro(difluoro)methane Chemical compound F[C](F)Cl QPAXMPYBNSHKAK-UHFFFAOYSA-N 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000000377 silicon dioxide Substances 0.000 abstract description 9
- 230000003647 oxidation Effects 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- 150000001875 compounds Chemical class 0.000 abstract description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 2
- 150000002222 fluorine compounds Chemical class 0.000 description 9
- 239000000835 fiber Substances 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 239000011162 core material Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 3
- 239000004338 Dichlorodifluoromethane Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 description 3
- 235000019404 dichlorodifluoromethane Nutrition 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000005049 silicon tetrachloride Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 239000005337 ground glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- -1 hydroxyl ions Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
- C03B37/01413—Reactant delivery systems
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
- C03B37/01413—Reactant delivery systems
- C03B37/0142—Reactant deposition burners
- C03B37/01426—Plasma deposition burners or torches
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
- C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
- C03B37/01807—Reactant delivery systems, e.g. reactant deposition burners
- C03B37/01815—Reactant deposition burners or deposition heating means
- C03B37/01823—Plasma deposition burners or heating means
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/07—Impurity concentration specified
- C03B2201/075—Hydroxyl ion (OH)
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/08—Doped silica-based glasses doped with boron or fluorine or other refractive index decreasing dopant
- C03B2201/12—Doped silica-based glasses doped with boron or fluorine or other refractive index decreasing dopant doped with fluorine
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2207/00—Glass deposition burners
- C03B2207/80—Feeding the burner or the burner-heated deposition site
- C03B2207/85—Feeding the burner or the burner-heated deposition site with vapour generated from liquid glass precursors, e.g. directly by heating the liquid
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/08—Doped silica-based glasses containing boron or halide
- C03C2201/12—Doped silica-based glasses containing boron or halide containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2203/00—Production processes
- C03C2203/40—Gas-phase processes
Definitions
- the invention relates to a method for the production of synthetic quartz glass, to an apparatus for the practice of the method, and to the use of the synthetic quartz glass.
- a quartz glass doped either with boron oxide or with fluorine As the jacket material a quartz glass doped either with boron oxide or with fluorine.
- the fluorine-doped quartz glass is obtained by oxidizing silicon tetrafluoride in accordance with the equation SiF 4 +2H 2 O+O 2 ⁇ SiO 2 +4HF, whereby small amounts of fluorine are to be incorporated into SiO 2 .
- the oxidation can also be brought about by reactive methods in which no hydrogen or H 2 O is present, such as for example in the high-frequency plasma, so that no hydrofluoric acid will form.
- hydroxyl-ion-free quartz glass which is substantially free of "water” and thus free of absorption bands at wavelengths of 1.4, 2.2 and 2.7 ⁇ m--hereinafter referred to as "hydroxyl-ion-free"--is known from German Pat. No. 1,208,740.
- the hydroxyl-ion-free quartz glass is obtained by oxidizing a hydrogen-free silicon compound in a hydrogen-free gas stream containing elemental and/or bound oxygen, and depositing the oxidation product as a vitreous mass on a refractory support, the gas stream being passed through an induction-coupled plasma burner.
- this invention contemplates an improvement in a process for producing a synthetic hydroxyl ion-free quartz glass wherein a hydrogen-free silicon compound is heated in a hydrogen-free gas stream, the gas stream being passed through an induction coupled plasma burner and containing elemental and/or bound oxygen and the oxidation product is deposited on the refractory support as a vitreous mass, the improvement comprising including in said gas stream a gaseous hydrogen-free thermally decomposable compound which yields fluorine in an amount of at least 500 gms per kg of silica to be produced.
- the objects of the present invention are achieved in a process for the production of synthetic, hydroxyl-ion-free quartz glass by oxidizing a hydrogen-free silicon compound in a hydrogen-free gas stream containing elemental and/or bound oxygen and depositing the oxidation product as a vitreous mass on a refractory support, the gas stream being passed through an induction-coupled plasma burner, by the fact that, in accordance with the invention, for the achievement of a prescribed reduction of the refractive index of synthetic quartz glass, a hydrogen-free, heat-decomposable fluorine compound in vapor form, especially dichlorodifluoromethane (CCl 2 F 2 ), is introduced into the flame of the plasma burner in the amount of at least 500 g per kg of synthesized SiO 2 .
- CCl 2 F 2 dichlorodifluoromethane
- a rod of synthetic, hydroxyl-ion-free quartz glass is used as the refractory support and is set in motion relative to the plasma burner, by rotating it for example, during the depositing of the fluorine-doped, synthetic, hydroxyl-ion-free quartz glass, one obtains a foreproduct for the manufacture of light conducting fibers, which consists of a core of the refractory support material and a covering of fluorine-doped synthetic quartz glass.
- a parabolic decrease of the refractive index in the covering is obtained if the amount of fluorine compound added is increased as the thickness of the covering increases.
- a light conducting fiber is then produced by drawing a foreproduct of this kind.
- a rod of synthetic quartz glass can advantageously be used whose refractive index is increased by the addition of refractive index increasing metal ions. It is advantageous to use a doped rod of synthetic quartz glass whose refractive index decreases with distance from the rod axis.
- Thermally decomposable hydrogen-free-fluorine compounds which can be used according to the invention include the following: CClF 3 , CF 4 .
- the amount of hydrogen-free thermally decomposable fluorine compound relative to the hydrogen-free silicon compound would depend upon the nature of the glass desired and in particular the relative amount of the fluorine in the compound. Broadly speaking, however, the weight relationship of the fluorine in the thermally decomposable fluorine compound to the silicon in the hydrogen free silicon compound will be in the range of 50 to 800 gms. fluorine per kg of silicon, preferably between 150 and 300 gms. fluorine per kg of silicon.
- the process is conducted by heating the hydrogen free silicon compound in the presence of the hydrogen-free gas stream containing elemental and/or bound oxygen and thermally decomposable fluorine compound at temperatures generally in the range of 1800° to 2600° C., preferably between 1850° and 2000° C.
- the temperatures are employed in an amount sufficient to deposit the so-heated mass upon a refractory support as a vitreous mass.
- the fluorine is present together with the silicon compound for a residence time of between 0.02 and 0.3 seconds, preferably between 0.04 and 0.15 seconds.
- a burner having three quartz glass tubes disposed concentrically at some distance from one another, the outer tube overreaching the middle and innermost tube and the middle tube overreaching the innermost tube.
- the working gas and the silicon compound including the fluorine compound present in vapor form are fed through the innermost tube, and a separating gas, preferably oxygen, is fed through the interstice between the innermost and the middle tube and between the middle tube and outermost tube.
- a separating gas preferably oxygen
- Reductions of the index of refraction to values of 1.4532 can easily be achieved in the synthetic quartz glass produced by the process of the invention, thereby providing the assurance that this quartz glass will be suitable also for the manufacture of light-conducting fibers, especially also for those light conducting fibers whose core consists of quartz glass of high purity.
- FIG. 1 is a side elevational view of an apparatus which can be employed to carry out the claimed process.
- FIG. 2 is a view similar to FIG. 1 showing a further apparatus for carrying out the claimed process.
- reference numeral 1 indicates a silicon tetrachloride reservoir from which the silicon tetrachloride is pumped by a proportioning pump 2 through the feed line 2 into a heated vaporizing dish 4, via line 3.
- Oxygen is fed into the vessel 5 containing the vaporizing dish through the line 6.
- the mixture of oxygen and silicon tetrachloride formed in vessel 5 is delivered through the ground-glass connection 7-8 made of quartz glass, into the plasma burner.
- the plasma burner is composed of a metal base 9 and the three quartz glass tubes 10, 11 and 12 which are sealed from one another and from the outside atmosphere within the metal base.
- the induction coil 13, which is supplied by the high-frequency electric power generator 14 is disposed about the free end of the outermost tube 12.
- the working gas and the two separating gases T-1 and T-2 are delivered through tangentially disposed lines 15, 16 and 17.
- a quartz glass piece 19 which serves as the substrate on which the fluorine-doped synthetic quartz glass is deposited.
- the piece of quartz glass 19 is held on a mandrel 20 in a device 21 which makes it possible to rotate and slowly draw back the piece during the depositing process, as indicated by the arrows 22 and 23.
- the positioning system 24 it is possible to orientate the quartz glass piece 19 in all three directions with respect to the plasma flame.
- the igniting of the plasma burner is performed in a conventional manner.
- Argon gas is introduced through the lines 15 and "ignited" by means of a tungsten rod in the vicinity of the coil 13 which is supplied with high-frequency energy.
- oxygen is slowly fed to the argon, and the argon content of the mixture is reduced until finally only oxygen is being fed.
- oxygen is fed through lines 16 and 17 as separating gases T-1 and T-2.
- the quartz glass piece 19 is advanced into the flame and heated with simultaneous rotation.
- a temperature of about 1900° C. the vaporous mixture of silicon chloride and oxygen is fed from vessel 5 into the plasma burner and then dichlorodifluoromethane (CCl 2 F 2 ) is admixed, at a rate, for example, of 0.7 kg/h, with the oxygen being introduced through line 15.
- CCl 2 F 2 dichlorodifluoromethane
- Due to the high temperature of the plasma flame the SiCl 4 decomposes and reacts with the oxygen to form SiO 2 , which deposits itself on the quartz glass piece 19 and vitrifies.
- the dichlorodifluoromethane is also decomposed by the high temperature of the plasma flame and fluorine is incorporated into the vitreous SiO 2 in a proportion of, for example, 5000 parts per million.
- the product fluorine-doped synthetic quartz glass, is free of hydroxyl ions.
- a rod 19' of hydroxyl-ion-free synthetic quartz glass can be used, as represented diagrammatically in FIG. 2, which is held in end mounts 26 which are longitudinally displaceable and contain machinery for the rotation of the rod 19' (arrows 27 and 28).
- the fluorine-doped synthetic quartz glass is then deposited as a covering 29 on the rod 19'.
- the product thus obtained is a foreproduct which can then be drawn directly to form a light-conductive fiber.
- a plasma burner having three concentric quartz glass tubes in a stepped configuration with the outermost tube overreaching the middle and innermost tubes and the middle tube overreaching the innermost tube, and blanketing the innermost and middle tubes with a separating gas, preferably oxygen, has the advantage that no silica can collect on the burner.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Manufacture, Treatment Of Glass Fibers (AREA)
- Glass Compositions (AREA)
- Glass Melting And Manufacturing (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2536572 | 1975-08-16 | ||
| DE19752536457 DE2536457C3 (de) | 1975-08-16 | Verfahren zur Herstellung von synthetischem, OH-Ionen-freiem Quarzglas, Vorrichtung zur Durchführung des Verfahrens und Verwendung des synthetischen Quarzglases | |
| DE2536457 | 1975-08-16 |
Related Parent Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US71354176A Continuation | 1975-08-16 | 1976-08-11 | |
| US05/874,965 Reissue US4162908A (en) | 1975-08-16 | 1978-02-03 | Method of producing synthetic quartz glass, apparatus for the practice of the method, and use of the synthetic quartz glass |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| USRE30883E true USRE30883E (en) | 1982-03-16 |
Family
ID=5954072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US06/121,078 Expired - Lifetime USRE30883E (en) | 1975-08-16 | 1980-02-13 | Method of producing synthetic quartz glass |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | USRE30883E (OSRAM) |
| JP (1) | JPS5224217A (OSRAM) |
| CH (1) | CH620181A5 (OSRAM) |
| FR (1) | FR2321459A1 (OSRAM) |
| GB (1) | GB1492920A (OSRAM) |
| NL (1) | NL176662C (OSRAM) |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0096878A1 (en) * | 1982-06-14 | 1983-12-28 | International Standard Electric Corporation | Fabrication of preforms for optical fibers by chemical vapor deposition using a plasma torch |
| US4440556A (en) | 1982-06-23 | 1984-04-03 | International Telephone And Telegraph Corporation | Optical fiber drawing using plasma torch |
| US4557561A (en) | 1980-08-18 | 1985-12-10 | Siemens Aktiengesellschaft | Doped glass and process for making |
| FR2568242A1 (fr) * | 1984-07-25 | 1986-01-31 | Int Standard Electric Corp | Procede et appareil pour le depot en phase vapeur de verre dope |
| EP0173183A1 (en) * | 1984-08-18 | 1986-03-05 | Mitsubishi Materials Corporation | Radiation-resistant optical conductor |
| US4689212A (en) | 1986-05-14 | 1987-08-25 | Polaroid Corporation | Method for forming doped optical preforms |
| US4716572A (en) | 1984-12-19 | 1987-12-29 | Sigri Gmbh | Method for coating carbon and graphite bodies |
| US4880452A (en) | 1984-06-04 | 1989-11-14 | Sumitomo Electric Industries, Ltd. | Method for producing glass preform for optical fiber containing fluorine in cladding |
| FR2714371A1 (fr) * | 1993-12-24 | 1995-06-30 | Cabloptic Sa | Procédé de recharge d'une préforme de fibre optique, dispositif pour la mise en Óoeuvre de ce procédé et fibre optique par ce procédé. |
| US5474589A (en) * | 1990-11-28 | 1995-12-12 | Sumitomo Electric Industries, Ltd. | UV light-permeable glass and article comprising the same |
| US20020005051A1 (en) * | 2000-04-28 | 2002-01-17 | Brown John T. | Substantially dry, silica-containing soot, fused silica and optical fiber soot preforms, apparatus, methods and burners for manufacturing same |
| US20020083741A1 (en) * | 2000-12-29 | 2002-07-04 | Pandelisev Kiril A. | Hot substrate deposition of fused silica |
| US20030002796A1 (en) * | 2001-05-22 | 2003-01-02 | Thomas Kupper | Optical waveguide |
| US20040028362A1 (en) * | 2002-08-07 | 2004-02-12 | Shin-Etsu Chemical Co., Ltd. | Optical fiber preform, method for manufacturing thereof, and optical fiber obtained by drawing thereof |
| US20040187525A1 (en) * | 2003-03-31 | 2004-09-30 | Coffey Calvin T. | Method and apparatus for making soot |
| US20050120752A1 (en) * | 2001-04-11 | 2005-06-09 | Brown John T. | Substantially dry, silica-containing soot, fused silica and optical fiber soot preforms, apparatus, methods and burners for manufacturing same |
| US20090020705A1 (en) * | 2001-02-26 | 2009-01-22 | Pandelisev Kiril A | Fiber Optic Enhanced Scintillator Detector |
| CN111320177A (zh) * | 2020-04-13 | 2020-06-23 | 黄冈师范学院 | 一种去除石英砂粉中羟基的方法 |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1029993A (en) * | 1975-09-11 | 1978-04-25 | Frederick D. King | Optical fibre transmission line |
| IT1091498B (it) * | 1977-11-25 | 1985-07-06 | Cselt Centro Studi Lab Telecom | Procedimento ed apparecchiatura per la produzione continua di fibre ottiche |
| FR2428618A1 (fr) * | 1978-06-16 | 1980-01-11 | Telecommunications Sa | Procede de fabrication d'une ebauche en vue de la realisation d'un guide de lumiere et ebauche obtenue selon le procede |
| FR2432478B1 (OSRAM) * | 1978-07-31 | 1982-03-12 | Quartz & Silice | |
| JPS5537465A (en) * | 1978-09-09 | 1980-03-15 | Nippon Telegr & Teleph Corp <Ntt> | Production of glass fiber base material |
| JPS5852935B2 (ja) * | 1978-11-20 | 1983-11-26 | 三菱マテリアル株式会社 | 光伝送用素材の製造方法 |
| FR2447890B1 (fr) * | 1979-02-05 | 1985-06-28 | Lyonnaise Transmiss Optiques | Procede de fabrication de preformes de fibres optiques a gradient d'indice, et dispositif de mise en oeuvre de ce procede |
| DE3036915C2 (de) * | 1979-10-09 | 1987-01-22 | Nippon Telegraph And Telephone Corp., Tokio/Tokyo | Verfahren und Vorrichtung zur Herstellung von Lichtleitfaserausgangsformen sowie deren Verwendung zum Ziehen von Lichtleitfasern |
| FR2476058A1 (fr) | 1980-02-15 | 1981-08-21 | Quartz Silice Sa | Semi-produit pour la production de fibres optiques, procede de preparation du semi-produit et fibres optiques obtenues a partir du semi-produit |
| JPS57100928A (en) * | 1980-12-12 | 1982-06-23 | Nippon Telegr & Teleph Corp <Ntt> | Burner for preparing base material for optical fiber |
| DE3206177A1 (de) * | 1982-02-20 | 1983-08-25 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur herstellung einer vorform, aus der optische fasern ziehbar sind |
| DE3304721A1 (de) * | 1983-02-11 | 1984-08-16 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur herstellung einer vorform fuer lichtwellenleiter |
| FR2540997B1 (fr) * | 1983-02-14 | 1987-02-27 | Western Electric Co | Procede de fabrication de fibres optiques |
| JPS6117435A (ja) * | 1984-07-05 | 1986-01-25 | Hitachi Cable Ltd | 光フアイバ母材の製造方法 |
| JP4763877B2 (ja) * | 2000-05-29 | 2011-08-31 | 信越石英株式会社 | F2エキシマレーザー用合成石英ガラス光学材料及び光学部材 |
| WO2019238808A1 (de) | 2018-06-15 | 2019-12-19 | Solar Silicon Gmbh | Verfahren zur herstellung von elementarem silizium |
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| US3981707A (en) * | 1975-04-23 | 1976-09-21 | Corning Glass Works | Method of making fluorine out-diffused optical device |
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| FR1380371A (fr) * | 1963-01-29 | 1964-11-27 | Thermal Syndicate Ltd | Procédé de fabrication de silice vitreuse pure |
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| GB1450123A (en) * | 1973-11-27 | 1976-09-22 | Post Office | Doped vitreous silica |
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- 1976-06-22 JP JP51072842A patent/JPS5224217A/ja active Pending
- 1976-08-12 GB GB33667/76A patent/GB1492920A/en not_active Expired
- 1976-08-16 FR FR7624905A patent/FR2321459A1/fr active Granted
- 1976-08-16 NL NLAANVRAGE7609083,A patent/NL176662C/xx not_active IP Right Cessation
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| US3275408A (en) * | 1963-01-29 | 1966-09-27 | Thermal Syndicate Ltd | Methods for the production of vitreous silica |
| US3659915A (en) * | 1970-05-11 | 1972-05-02 | Corning Glass Works | Fused silica optical waveguide |
| US3843229A (en) * | 1971-11-25 | 1974-10-22 | Siemens Ag | Optical waveguide having a graded refractive index core formed of silicon and germanium |
| DE2247307A1 (de) * | 1972-09-27 | 1974-03-28 | Siemens Ag | Verfahren zur herstellung von ausgangsstaeben zum ziehen von aus einem dotierten kern und einem undotierten mantel bestehenden lichtleitfasern |
| US3778132A (en) * | 1972-10-06 | 1973-12-11 | Bell Telephone Labor Inc | Optical transmission line |
| FR2253723A1 (en) * | 1973-12-07 | 1975-07-04 | Passaret Michel | Preform for optical waveguide mfr. - by plasma arc spraying a lower RI glass around or inside a higher RI glass |
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| US3981707A (en) * | 1975-04-23 | 1976-09-21 | Corning Glass Works | Method of making fluorine out-diffused optical device |
Cited By (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4557561A (en) | 1980-08-18 | 1985-12-10 | Siemens Aktiengesellschaft | Doped glass and process for making |
| EP0096878A1 (en) * | 1982-06-14 | 1983-12-28 | International Standard Electric Corporation | Fabrication of preforms for optical fibers by chemical vapor deposition using a plasma torch |
| US4440558A (en) | 1982-06-14 | 1984-04-03 | International Telephone And Telegraph Corporation | Fabrication of optical preforms by axial chemical vapor deposition |
| US4440556A (en) | 1982-06-23 | 1984-04-03 | International Telephone And Telegraph Corporation | Optical fiber drawing using plasma torch |
| US4880452A (en) | 1984-06-04 | 1989-11-14 | Sumitomo Electric Industries, Ltd. | Method for producing glass preform for optical fiber containing fluorine in cladding |
| FR2568242A1 (fr) * | 1984-07-25 | 1986-01-31 | Int Standard Electric Corp | Procede et appareil pour le depot en phase vapeur de verre dope |
| US4735648A (en) | 1984-07-25 | 1988-04-05 | Stc Plc | Optical fibre manufacture |
| EP0173183A1 (en) * | 1984-08-18 | 1986-03-05 | Mitsubishi Materials Corporation | Radiation-resistant optical conductor |
| US4716572A (en) | 1984-12-19 | 1987-12-29 | Sigri Gmbh | Method for coating carbon and graphite bodies |
| US4689212A (en) | 1986-05-14 | 1987-08-25 | Polaroid Corporation | Method for forming doped optical preforms |
| US5474589A (en) * | 1990-11-28 | 1995-12-12 | Sumitomo Electric Industries, Ltd. | UV light-permeable glass and article comprising the same |
| FR2714371A1 (fr) * | 1993-12-24 | 1995-06-30 | Cabloptic Sa | Procédé de recharge d'une préforme de fibre optique, dispositif pour la mise en Óoeuvre de ce procédé et fibre optique par ce procédé. |
| US20020005051A1 (en) * | 2000-04-28 | 2002-01-17 | Brown John T. | Substantially dry, silica-containing soot, fused silica and optical fiber soot preforms, apparatus, methods and burners for manufacturing same |
| US7089766B2 (en) | 2000-04-28 | 2006-08-15 | Corning Inc | Method of forming optical fiber preforms |
| US20050155388A1 (en) * | 2000-04-28 | 2005-07-21 | Burke Gerald E. | Substantially dry, silica-containing soot, fused silica and optical fiber soot preforms, apparatus, methods and burners for manufacturing same |
| US7797966B2 (en) | 2000-12-29 | 2010-09-21 | Single Crystal Technologies, Inc. | Hot substrate deposition of fused silica |
| US20020083741A1 (en) * | 2000-12-29 | 2002-07-04 | Pandelisev Kiril A. | Hot substrate deposition of fused silica |
| US20090020705A1 (en) * | 2001-02-26 | 2009-01-22 | Pandelisev Kiril A | Fiber Optic Enhanced Scintillator Detector |
| US20050120752A1 (en) * | 2001-04-11 | 2005-06-09 | Brown John T. | Substantially dry, silica-containing soot, fused silica and optical fiber soot preforms, apparatus, methods and burners for manufacturing same |
| US20030002796A1 (en) * | 2001-05-22 | 2003-01-02 | Thomas Kupper | Optical waveguide |
| US7752869B2 (en) | 2002-08-07 | 2010-07-13 | Shin-Etsu Chemical Co., Ltd. | Optical fiber preform, method for manufacturing thereof, and optical fiber obtained by drawing thereof |
| US20050229639A1 (en) * | 2002-08-07 | 2005-10-20 | Shin-Etsu Chemical Co., Ltd. | Optical fiber preform, method for manufacturing thereof, and optical fiber obtained by drawing thereof |
| US20040028362A1 (en) * | 2002-08-07 | 2004-02-12 | Shin-Etsu Chemical Co., Ltd. | Optical fiber preform, method for manufacturing thereof, and optical fiber obtained by drawing thereof |
| US20040187525A1 (en) * | 2003-03-31 | 2004-09-30 | Coffey Calvin T. | Method and apparatus for making soot |
| CN111320177A (zh) * | 2020-04-13 | 2020-06-23 | 黄冈师范学院 | 一种去除石英砂粉中羟基的方法 |
| CN111320177B (zh) * | 2020-04-13 | 2023-09-15 | 黄冈师范学院 | 一种去除石英砂粉中羟基的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CH620181A5 (en) | 1980-11-14 |
| NL176662B (nl) | 1984-12-17 |
| FR2321459A1 (fr) | 1977-03-18 |
| NL7609083A (nl) | 1977-02-18 |
| DE2536457B2 (de) | 1977-06-08 |
| DE2536457A1 (de) | 1977-02-17 |
| JPS5224217A (en) | 1977-02-23 |
| FR2321459B1 (OSRAM) | 1979-06-22 |
| NL176662C (nl) | 1985-05-17 |
| GB1492920A (en) | 1977-11-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AS | Assignment |
Owner name: HERAEUS QUARZGLAS GMBH, GERMANY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HERAEUS QUARZSCHMELZE GMBH;REEL/FRAME:008677/0739 Effective date: 19900528 |