US9235132B2 - Large-mesh cell-projection electron-beam lithography method - Google Patents

Large-mesh cell-projection electron-beam lithography method Download PDF

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Publication number
US9235132B2
US9235132B2 US13/641,125 US201113641125A US9235132B2 US 9235132 B2 US9235132 B2 US 9235132B2 US 201113641125 A US201113641125 A US 201113641125A US 9235132 B2 US9235132 B2 US 9235132B2
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block
lithography method
cells
edges
individual cells
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US20130201467A1 (en
Inventor
Serdar Manakli
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31764—Dividing into sub-patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Definitions

  • the present invention applies to the field of electron-beam lithography.
  • the present invention provides a response to this problem by enlarging the cell mesh and by correlatively reducing the radiated doses, which makes it possible to reduce the writing time. Also in this way it is possible to provide a uniform dosage over the entire surface of the block to be etched, except in the vicinity of its edges.
  • a 2.4 ⁇ m 2 cell yields a reduction in the number of shots, and therefore of the production time, by a factor close to 4.
  • the invention provides a radiating lithography method based on projection of at least one block onto a resin-coated substrate comprising a step of fracturing said block into individual cells to be projected onto said substrate and a step of formation of said cells by a radiating source, wherein the size of said individual cells is dimensioned by the maximum aperture of said method.
  • the dosage of the radiated energy is uniform for all the individual cells of said at least one block, except in the vicinity of the edges of said block.
  • At least one row of individual cells is located outside of the edges of said block to be etched.
  • the individual cells not situated in the vicinity of the edges of the block to be etched are not adjoining.
  • the mesh of the individual cells is greater by approximately 125% than the normal mesh of the cells of the process.
  • the normal mesh of the cells of the process is approximately 1.6 ⁇ m ⁇ 1.6 ⁇ m.
  • the method of the invention also comprises a step of calculating the width of shots to be located outside of a block edge, a step of calculating the dose modulation on the edges of said block, said calculations being linked by a functional relationship involving the process energy latitude, and a step of locating said shots outside of said block.
  • the step of calculating the dose modulation on the edges of said block comprises a substep of calculating said dose by convolution of the radiated dose with the pattern of the edge.
  • the step of calculating the dose modulation on the edges of said block comprises a substep of calculating said dose by invoking a table of parameters.
  • the method of the invention also comprises a step of calculating at least one spacing between the edge of the block and the shots to be located outside of said block.
  • the size of the block to be etched is substantially equal to 500 nm.
  • the invention also provides a computer program comprising program code instructions configured to execute a radiating lithography method based on projection of at least one block onto a resin-coated substrate when the program is run on a computer, said program comprising a module for fracturing said block into individual cells to be projected onto said substrate and a module capable of controlling the formation of said cells by a radiating source, wherein said latter module is capable of controlling the formation of said individual cells to a dimension determined by the maximum aperture of said process.
  • the module for controlling the formation of said cells generates a dosage of the radiated energy that is uniform for all the individual cells of said at least one block, except in the vicinity of the edges of said block.
  • the computer program of the invention also comprises a module capable of performing the calculation of the width of shots to be located outside of a block edge and the calculation of the dose modulation on the edges of said block, said calculations being linked by a functional relationship involving the process energy latitude, and a module capable of producing the location of said shots outside of said block.
  • the computer program of the invention also comprises a module capable of performing the calculation of at least one spacing between the edge of the block and the shots to be located outside of said block.
  • the invention also makes it possible to reduce the number of high doses (and therefore the number of shots of long duration). Overall, it therefore yields a cumulative reduction in the production times.
  • the invention is also particularly advantageous when it is applied to a design with all the blocks more than 5 ⁇ m wide, with all the opaque blocks and with input/output blocks.
  • FIGS. 1 a , 1 b and 1 c respectively represent the two levels of an electron-beam lithography device, the illustration of their superposition and various results of said superposition;
  • FIG. 2 graphically represents the dose radiated by an electron-beam lithography device according to the critical dimension of the design for four types of patterns to be etched;
  • FIG. 3 represents how a cell is etched in one embodiment of the invention
  • FIGS. 4 a and 4 b respectively represent a set of blocks to be etched and this set etched by a method of the prior art
  • FIGS. 5 a and 5 b respectively represent a view of the level of dummy cells to be etched and this set etched by a method according to one embodiment of the invention
  • FIGS. 6 a and 6 b respectively represent a view of the level of cells to be etched and this set etched by a method according to a variant of the invention
  • FIG. 7 illustrates the method of resizing the edges of the block to be etched according to a variant of the invention
  • FIG. 8 illustrates an embodiment of the invention in which the cells to be etched are not adjoining.
  • FIGS. 1 a , 1 b and 1 c respectively represent the two levels of an electron-beam lithography device, the illustration of their superposition and various results of said superposition.
  • the pattern to be etched is first fractured into individual functional cells, 140 a , which can be etched on a resin-coated substrate.
  • Said resin-coated substrate may be a silicon wafer, a wafer made of another material III-V or of glass, on which the functions of an electronic circuit are intended to be etched by direct radiating writing, said radiation being able to be an electron-beam radiation or an ion-beam radiation.
  • Said substrate may also be a mask which will then be used to etch a wafer consisting of the same materials as above, said etching using an electron-beam or ion-beam etching method or an optical lithography method.
  • the method of the invention will be illustrated by exemplary embodiments according to an electron-beam lithography method based on direct writing on a wafer of any kind, without embodiments not limiting the full scope of the invention.
  • the method of the invention is particularly suited to the reproduction of functional blocks with repetitive patterns such as dynamic, static, random-access or read-only, rewritable or non-rewritable memories, as well as to circuits of the gate array type.
  • a machine capable of performing the method of the invention after adaptations to its driving software and/or at least one of the stencil supports, which are explained hereinafter in the description, is, for example, a VISTECTM or ADVANTESTTM brand machine.
  • a source of electrons, 110 a radiates onto the substrate via two levels of stencils, 120 a and 130 a , which comprise individual figures such as squares, rectangles or triangles, represented in FIG. 1 c.
  • the individual figures of the two levels of stencils, 120 a and 130 a are composed between them, so that the dimensions of the individual cell which will be etched on the substrate, 140 a , correspond to the desired design.
  • the composition of the two stencils is performed in a manner known to a person skilled in the art.
  • Software configured for this purpose drives the rotation of the stencil supports so that the individual figures of the two stencils are correctly aligned at the moment of the emission of the shot by the source of electrons, 110 a.
  • the mesh of an individual cell 140 a which is etched on the substrate is chosen to be the largest possible according to the parameters of the machine used as guaranteed by the manufacturer for an optimum resolution over patterns.
  • the resolution of the lithography machine is guaranteed by the manufacturer for a mesh of 1.6 ⁇ m ⁇ 1.6 ⁇ m, which corresponds to a technology of 45 and 32 nm critical dimension
  • This is the maximum aperture of the machine, which can be used without loss of resolution in the case of these applications.
  • FIG. 2 graphically represents the dose radiated by an electron-beam lithography device according to the dimension of the design for four types of patterns to be etched.
  • the four curves, 210 , 220 , 230 and 240 represent the trends of doses needed to etch patterns according to their dimension in four cases, respectively:
  • the vertical straight line, 250 represents the critical dimension of the method.
  • FIG. 3 represents the manner in which a cell is etched in one embodiment of the invention.
  • the two stencil levels 120 a and 130 a have to be positioned one relative to the other dynamically in such a way that the source of electrons, 110 a , can combine the two apertures of these stencils to etch on the substrate a cell 140 a of average mesh 2.4 ⁇ m ⁇ 2.4 ⁇ m, or another mesh corresponding to the maximum aperture of the lithography machine used.
  • FIGS. 4 a and 4 b respectively represent a set of blocks to be etched and this set etched by a method of the prior art.
  • FIG. 4 a represents the block to be etched after fracturing.
  • FIG. 4 b represents the etched block.
  • FIGS. 5 a and 5 b respectively represent a view of the level of cells to be etched and this set etched by a method according to one embodiment of the invention.
  • FIG. 5 a represents the block to be etched after fracturing.
  • a strip 510 a will be noted on the edge, which represents a radiated dose added to the outside of the pattern to be etched. This strip is presented as a variant.
  • a space is left between the pattern to be etched and the added strip and, possibly, at least one second external strip is added, also separated from the first by a space.
  • this spacing enhances the energy latitude of the method.
  • the dose to be applied outside of the pattern is calculated either by convolution of the radiated dose with the pattern to be etched or by using a table of parameters.
  • the combined calculation of the dose modulation to be applied and of the size of the new pattern is performed in such a way as to preserve the process energy latitude according to a calculation of which an example is given below as commentary to FIG. 7 .
  • FIG. 5 b represents the etched block.
  • the visual comparison of FIGS. 4 b and 5 b shows the very significant reduction in the number of cells and therefore in the exposure time which results from the use of the method of the invention.
  • FIGS. 6 a and 6 b respectively represent a view of the level of cells to be etched and this set etched by a method according to another variant of the invention.
  • a spacing, 620 a can be observed between the strip added to the outside of the pattern, 510 a , of FIG. 5 a and the pattern to be etched.
  • this spacing allows an optimization of the process energy latitude of the method.
  • Another advantageous embodiment consists in leaving a space between the pattern to be etched and the added strip and, possibly, in adding at least one second external strip also separated from the first by a space. In all the configurations, this spacing enhances the process energy latitude. By means of experiments, it is found that a spacing of between 0.2 times the strip width and 3 times the strip width is effective.
  • the calculation of the positioning of the additional strip 510 a is illustrated by FIG. 7 in an embodiment in which the dose modulation is calculated from a convolution of the radiated dose with the pattern to be etched.
  • the geometry of the additional pattern is then modified in at least one dimension to optimize the process energy latitude. More specifically, the displacement, 750 , to be performed in that dimension is calculated by searching for the intersection of the straight line, 740 , tangential to the received dose curve, 720 , at the point where the dose received is equal to the sensitivity threshold of the resin at 0.5 with the straight line, 730 , which represents said sensitivity threshold, then by performing the displacement to the point of intersection of the latter straight line with the profile of the radiated dose, 710 .
  • the combined dose/patterns calculation can be iterated two or three times.
  • the modulation of the dose to be applied on the patterns can also be calculated from a table of parameters without convolution calculation, notably when the modulation is applied only to the shots outside of the patterns, the other shots being applied to the normalized value of the method, or to a value lower by the order of 30% than the latter.
  • FIG. 8 illustrates an embodiment of the invention in which the cells to be etched are not adjoining.
  • the individual cells are arranged in a non-adjoining manner.
  • the cells are not necessarily juxtaposed. They can advantageously be separated from one another.
  • the writing time is linked to the product (surface area to be isolated ⁇ dose)
  • FIG. 8 is in no way limiting and that the spacing between exposed areas is not necessarily equal to their size.
  • the method of the invention has been described in an example of application to an electron-beam lithography method based on direct writing. It can also be applied to another direct writing method using other particles such as ions or photons or to electron-beam lithography methods or to an optical writing method using masks.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
US13/641,125 2010-04-15 2011-04-13 Large-mesh cell-projection electron-beam lithography method Expired - Fee Related US9235132B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1052866 2010-04-15
FR1052866A FR2959028B1 (fr) 2010-04-15 2010-04-15 Procede de lithographie electronique par projection de cellules a grande maille
PCT/EP2011/055861 WO2011128391A1 (fr) 2010-04-15 2011-04-13 Procede de lithographie electronique par projection de cellules a grande maille

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US20130201467A1 US20130201467A1 (en) 2013-08-08
US9235132B2 true US9235132B2 (en) 2016-01-12

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US (1) US9235132B2 (ko)
EP (1) EP2559053B1 (ko)
JP (2) JP2013527983A (ko)
KR (1) KR101818789B1 (ko)
FR (1) FR2959028B1 (ko)
WO (1) WO2011128391A1 (ko)

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JP6663163B2 (ja) * 2011-09-13 2020-03-11 コミシリア ア レネルジ アトミック エ オ エナジーズ オルタネティヴズ 確率的方法により露出するパターンの逆畳み込みを用いて電子近接効果を補正する方法
KR101587697B1 (ko) 2013-12-13 2016-01-22 유충춘 수소수 제조장치
US11803125B2 (en) 2020-06-25 2023-10-31 Singapore University Of Technology And Design Method of forming a patterned structure and device thereof

Citations (8)

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US5808310A (en) 1996-01-16 1998-09-15 Nec Corporation Electron beam cell projection lithography method for correcting coulomb interaction effects
US6069684A (en) 1998-02-04 2000-05-30 International Business Machines Corporation Electron beam projection lithography system (EBPS)
KR20000043250A (ko) * 1998-12-28 2000-07-15 김영환 반도체 소자의 미세패턴 형성방법
US20020153494A1 (en) 2001-04-19 2002-10-24 Nikon Corporation Apparatus and methods for reducing coulombic blur in charged-particle-beam microlithography
US20020162088A1 (en) * 2001-02-23 2002-10-31 Kabushiki Kaisha Toshiba Charged particle beam exposure system using aperture mask in semiconductor manufacture
US20080203324A1 (en) * 2007-02-22 2008-08-28 Cadence Design Systems, Inc. Method and system for improvement of dose correction for particle beam writers
US20100058279A1 (en) 2008-09-01 2010-03-04 D2S, Inc. Method and System for Design of a Reticle to be Manufactured Using Variable Shaped Beam Lithography
WO2011128393A1 (fr) 2010-04-15 2011-10-20 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de lithographie a optimisation combinee de l'energie rayonnee et de la geometrie de dessin

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JPH0547644A (ja) * 1991-08-09 1993-02-26 Nikon Corp 電子線描画装置及び電子線描画方法
JPH11186151A (ja) * 1997-12-16 1999-07-09 Nikon Corp 近接効果補正方法及びこれに用いられる補正用レチクル
JP2003151891A (ja) * 2001-11-16 2003-05-23 Nec Electronics Corp マスクパターンの近接効果補正方法
JP5242963B2 (ja) * 2007-07-27 2013-07-24 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置、パターン寸法のリサイズ装置、荷電粒子ビーム描画方法及びパターン寸法のリサイズ方法
TWI506672B (zh) * 2008-09-01 2015-11-01 D2S Inc 用於在表面碎化及形成圓形圖案與用於製造半導體裝置之方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5808310A (en) 1996-01-16 1998-09-15 Nec Corporation Electron beam cell projection lithography method for correcting coulomb interaction effects
US6069684A (en) 1998-02-04 2000-05-30 International Business Machines Corporation Electron beam projection lithography system (EBPS)
KR20000043250A (ko) * 1998-12-28 2000-07-15 김영환 반도체 소자의 미세패턴 형성방법
US20020162088A1 (en) * 2001-02-23 2002-10-31 Kabushiki Kaisha Toshiba Charged particle beam exposure system using aperture mask in semiconductor manufacture
US20020153494A1 (en) 2001-04-19 2002-10-24 Nikon Corporation Apparatus and methods for reducing coulombic blur in charged-particle-beam microlithography
US20080203324A1 (en) * 2007-02-22 2008-08-28 Cadence Design Systems, Inc. Method and system for improvement of dose correction for particle beam writers
US20100058279A1 (en) 2008-09-01 2010-03-04 D2S, Inc. Method and System for Design of a Reticle to be Manufactured Using Variable Shaped Beam Lithography
WO2011128393A1 (fr) 2010-04-15 2011-10-20 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de lithographie a optimisation combinee de l'energie rayonnee et de la geometrie de dessin
FR2959026A1 (fr) 2010-04-15 2011-10-21 Commissariat Energie Atomique Procede de lithographie a optimisation combinee de l'energie rayonnee et de la geometrie de dessin

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JP2016171309A (ja) 2016-09-23
US20130201467A1 (en) 2013-08-08
WO2011128391A1 (fr) 2011-10-20
JP6270882B2 (ja) 2018-01-31
FR2959028B1 (fr) 2015-12-25
KR20130073881A (ko) 2013-07-03
JP2013527983A (ja) 2013-07-04
FR2959028A1 (fr) 2011-10-21
EP2559053B1 (fr) 2018-06-27
KR101818789B1 (ko) 2018-01-15
EP2559053A1 (fr) 2013-02-20

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