US9171975B2 - Solar cell element and process for production thereof - Google Patents

Solar cell element and process for production thereof Download PDF

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US9171975B2
US9171975B2 US13/640,474 US201113640474A US9171975B2 US 9171975 B2 US9171975 B2 US 9171975B2 US 201113640474 A US201113640474 A US 201113640474A US 9171975 B2 US9171975 B2 US 9171975B2
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electrodes
solar cell
cell element
copper
semiconductor substrate
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US20130025677A1 (en
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Yoshio Miura
Shinichi Suzuki
Daisuke Ota
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the present invention relates to a solar cell element including a semiconductor substrate and electrodes, and to a method for manufacturing the solar cell element.
  • an electrically conductive paste including silver as the main component is coated onto a semiconductor substrate of silicon or the like in a prescribed pattern, using screen printing, after which firing is done to form the electrode.
  • an electrically conductive paste containing aluminum as the main component is coated by screen printing onto a semiconductor substrate of silicon or the like, and the coated electrically conductive paste is fired to form a collector electrode, after which an electrically conductive paste containing silver as the main component is coated onto the collector electrode, followed by firing to form a lead-out electrode (refer to Patent References 1 to 3 noted below).
  • the difference in coefficients of thermal expansion between the semiconductor substrate of silicon or the like and aluminum and the difference in coefficients of thermal expansion between aluminum and silver cause stress to occur, and this may cause warping of the semiconductor substrate.
  • the present invention has as an object to provide a high-reliability solar cell element that can perform carrier extraction efficiently and also in which the semiconductor substrate tends not to warp, and a method for manufacturing the solar cell element.
  • An aspect of the present invention is a solar cell element that includes a semiconductor substrate having a first semiconductor layer of one conductivity type and a second semiconductor layer of the opposite conductivity type, and electrodes for extracting generated electric power.
  • the second semiconductor layer is disposed on at least a first main surface of the semiconductor substrate.
  • the electrodes have first electrodes that are disposed on the second semiconductor layer and second electrodes that are disposed on a second main surface positioned on the side opposite from the first main surface of the semiconductor substrate.
  • at least one of the first electrodes and the second electrodes contains silver, copper, and nickel as the main components.
  • At least one of the first electrode and the second electrode is formed by coating an electrically conductive paste containing silver, copper, and nickel as the main components, and then firing the electrically conductive paste.
  • a solar cell element and method for manufacturing a solar cell element that are aspects of the present invention, efficient carrier extraction is possible and also the semiconductor substrate tends not to warp.
  • FIG. 1 is a drawing showing in schematic form an example of a solar cell element of a double-sided electrode type according to an embodiment of the present invention, (a) being a plan view showing an example of the outer appearance of the light-receiving surface side of the solar cell element, and (b) being a plan view showing an example of the outer appearance of the rear surface side of the solar cell element.
  • FIG. 2( a ) to FIG. 2( e ) are cross-sectional views showing manufacturing process steps for a double-sided electrode type solar cell element according to an embodiment of the present invention.
  • FIG. 3 is a drawing showing in schematic form a back-contact type solar cell element according to an embodiment of the present invention, (a) being a drawing showing an example of the outer appearance of the light-receiving surface side of the solar cell element, and (b) being a drawing showing an example of the outer appearance of the rear surface side of the solar cell element.
  • FIG. 4( a ) is a cross-sectional view along the cutting line in the X-X direction in FIG. 3( a ), and FIG. 4( b ) is a cross-sectional view along the cutting line Y-Y in FIG. 3 ( a ).
  • FIG. 5 is a copy of an SEM photograph of a bus bar electrode, this drawing showing a plurality of metal regions that contain a copper-nickel alloy as the main component and a metal region containing silver as the main component surrounding each of these metal regions.
  • FIG. 6 is copy of an SEM photograph of a bus bar electrode, this drawing showing a first metal region that contains copper as the main component and a second metal region that contains silver and nickel as main components.
  • FIG. 7 is a cross-sectional view of a solar cell element for the purpose of schematically describing the measurement of warping.
  • FIG. 8 is a graph showing the relationship between the type of electrically conductive paste and warping of the solar cell element.
  • FIG. 9 is a graph showing the relationship between the type of electrically conductive paste and the photovoltaic conversion efficiency of the solar cell element.
  • FIG. 10 is a graph showing the relationship between the type of electrically conductive paste and the intimate contact strength between the bus bar electrode and the semiconductor substrate.
  • a solar cell element and method for manufacturing the solar cell element according to an embodiment of the present invention will be described in detail below.
  • the solar cell element 1 includes a semiconductor substrate 2 that includes at least a first semiconductor layer of one conductivity type and a second semiconductor layer of the opposite conductivity type, and electrodes (bus bar electrodes 3 , finger electrodes 4 , collector electrode 5 , and output lead-out electrodes 6 ) for extracting generated electric power.
  • the second semiconductor layer is disposed on at least a first main surface 2 a of the semiconductor substrate 2
  • the electrodes include first electrodes (bus bar electrodes 3 , finger electrodes 4 ) that are disposed on the second semiconductor layer and second electrodes (collector electrode 5 , output lead-out electrodes 6 ) that are disposed on a second main surface 2 b positioned on the side opposite from the first main surface 2 a of the semiconductor substrate 2 .
  • first electrodes bus bar electrodes 3 , finger electrodes 4
  • second electrodes collector electrode 5 , output lead-out electrodes 6
  • the solar cell element 1 at least one of the first electrodes and the second electrodes includes silver, copper, and nickel as the main component.
  • main component contains silver, copper, and nickel as the main component
  • main component shall mean, in the same manner, a content of 80% or greater by mass
  • At least one of the first electrodes and the second electrodes either includes a plurality of first metal regions including a copper-nickel alloy as the main component and a second metal region including silver as the major component that surrounds each of the first metal regions, or includes a first metal region including copper as the main component and a second metal region including silver and nickel as the main component.
  • the semiconductor substrate 2 may include a first semiconductor layer of one conductivity type and a second semiconductor layer, by preparing a semiconductor substrate of one conductivity type and forming a second semiconductor layer of the opposite conductivity type on at least the first main surface 2 a of the semiconductor substrate.
  • the electrodes provided on the second semiconductor layer of the solar cell element 1 may be provided on only the first main surface 2 a side of the semiconductor substrate 2 . Also, the electrodes provided on the second semiconductor layer may be formed also on the second main surface 2 b side of the semiconductor substrate 2 .
  • the solar cell element back-contact type solar cell element in that case further includes a plurality of through holes that pass through between the first main surface 2 a and the second main surface 2 b of the semiconductor substrate 2 and includes conductors disposed within these through holes, the second semiconductor layer being disposed so as to be in contact with the conductors at the inner walls as well of the through holes, and the first electrodes being lead out to the second main surface 2 b side of the semiconductor substrate 2 as well via the conductors.
  • FIG. 1( a ), FIG. 1( b ), and FIG. 2 a double-sided electrode solar cell element will be described, in which, as shown in FIG. 1( a ), FIG. 1( b ), and FIG. 2 , one type each of electrodes of mutually different polarities is provided on the first main surface 2 a , which is the light-receiving side of the semiconductor substrate 2 and, the second main surface 2 b , which is the rear surface (non-light-receiving surface) positioned on the side opposite from the first main surface 2 a .
  • the materials used in the electricity generating part of the solar cell element 1 although the electrode materials for extracting electrical power therefrom are not restricted, are described below for the case of a silicon-based solar cell element.
  • the double-sided electrode type solar cell element 1 includes a semiconductor substrate 2 that includes a first main surface 2 a to which light is incident and a second main surface 2 b positioned on the side opposite from the first main surface 2 a , bus bar electrodes 3 and finger electrodes 4 that are provided on the first main surface 2 a of the semiconductor substrate 2 , and a collector electrode 5 and output lead-out electrodes 6 that are provided on the second main surface 2 b.
  • the semiconductor substrate 2 is made of a silicon wafer of, for example, single-crystal silicon or polycrystalline silicon, and is rectangular when seen in plan view with one side being, for example, approximately 150 to 160 mm.
  • the semiconductor substrate 2 includes a first semiconductor layer of one conductivity type and a second semiconductor layer of a conductivity type opposite from the first semiconductor layer. That is, the semiconductor substrate 2 has a p-type silicon layer and an n-type silicon layer, the junction part between these layers being referred to as the pn junction part.
  • the electrodes formed on the first main surface 2 a of the semiconductor substrate 2 are a plurality of linear bus bar electrodes 3 with a width of approximately 1 to 3 mm and narrow finger electrodes 4 , which intersect with the bus bar electrodes 3 substantially perpendicularly when seen in plan view.
  • the finger electrodes 4 are a plurality of linear electrodes provided with a pitch of approximately 2 to 5 mm, the width of the individual linear electrodes being approximately 50 to 200 ⁇ m.
  • the thickness of the bus bar electrodes 3 and the finger electrodes 4 is approximately 10 to 20 ⁇ m.
  • the electrodes formed on the second main surface 2 b are the collector electrode 5 and the plurality of linear output lead-out electrodes 6 .
  • the thickness of the output lead-out electrodes 6 is approximately 10 to 20 ⁇ m, and the width of the linear electrodes is approximately 3.5 to 7 mm.
  • the thickness of the collector electrode 5 is approximately 15 to 50 ⁇ m.
  • the finger electrodes 4 and the collector electrode 5 have the role of collecting the generated carriers, and the bus bar electrodes 3 and the output lead-out electrodes 6 have the role of outputting the collected carriers to the outside at the finger electrodes 4 and the collector electrode 5 .
  • the operating effect of the solar cell element 1 will be described.
  • the light strikes from the first main surface 2 a side of the solar cell element 1 , the light undergoes photovoltaic conversion within the semiconductor substrate 2 to electron carriers and hole carriers. That is, by the action of the above-described pn junction part, electron carriers and hole carriers are collected at the electrodes provided at the first main surface 2 a and the second main surface 2 b of the solar cell element 1 , and a potential difference is generated between the electrodes.
  • a silicon substrate 2 made of single-crystal silicon or polycrystalline silicon of one conductivity type is prepared.
  • the semiconductor substrate 2 used is preferably a p-type substrate with a resistivity of approximately 0.2 to 2 ⁇ cm, using, for example, B (boron) as a dopant.
  • B boron
  • the semiconductor substrate 2 used may be an n-type substrate, the description that follows uses a p-type substrate as an example of the semiconductor substrate 2 .
  • the semiconductor substrate 2 is single-crystal silicon, an ingot is produced by a pulling method such as the Czochralski method. If the semiconductor substrate 2 is polycrystalline silicon, the ingot is manufactured by the casting method or the like. Polycrystalline silicon has an advantage over single-crystal silicon in that it can be mass-produced. The following description uses the example of polycrystalline silicon used as the semiconductor substrate 2 .
  • the polycrystalline silicon ingot is sliced to a thickness of 350 ⁇ m or less, and preferably 200 ⁇ m or less (for example 150 to 200 ⁇ m) to form the semiconductor substrate 2 .
  • a very small amount of etching using an NaOH solution, a KOH solution, or a mixed solution of hydrofluoric acid and fluoronitric acid or the like.
  • etching or wet etching or the like or RIE (reactive ion etching) or the like to form an uneven (rough-surface) structure functioning to reduce light reflectivity at the first main surface 2 a side of the semiconductor substrate 2 .
  • RIE reactive ion etching
  • an n-type layer 9 is formed over the entire surface of the semiconductor substrate 2 .
  • P phosphorus
  • the sheet resistance of the n-type layer 9 is made 30 to 300 ⁇ /square. By doing this, a pn junction part is formed between the n-type layer 9 and a p-type bulk region 10 .
  • the n-type layer 9 is formed to a thickness of approximately 0.2 to 0.7 ⁇ m by heating the semiconductor substrate 2 to approximately 700 to 900° C., after which gas-phase thermal diffusion is done for approximately 20 to 40 minutes while maintaining the temperature in an atmosphere of gasified POCl 3 (phosphorus oxychloride) to be used as a diffusion source 22 .
  • POCl 3 phosphorus oxychloride
  • phosphorus glass is formed over the entire surface of the semiconductor substrate 2 .
  • the semiconductor substrate 2 is immersed in hydrofluoric acid to remove the phosphorus glass, followed by washing and drying.
  • the removed part 7 performs pn separation (cutting apart the continuous part of the pn junction part by removing the pn junction part or by forming a groove in the pn junction part).
  • This removal of part of the n-type layer 9 is done by sandblasting that blows particles of alumina or silicon oxide at a high pressure onto the end face peripheral part of the second main surface 2 b of the silicon wafer, or by forming a separation groove that reaches the pn junction part by using a YAG (yttrium-aluminum-garnet) laser or the like.
  • YAG yttrium-aluminum-garnet
  • the anti-reflection film 8 is formed on the first main surface 2 a .
  • a SiNx (silicon nitride) film, a TiO 2 film, an SiO 2 film, an MgO film, an ITO film, an SnO 2 film, or a ZnO film or the like may be used as the material for the anti-reflection film 8 .
  • the thickness of the anti-reflection film 8 is selected as appropriate in accordance with the material, so as to achieve the no-reflection condition with respect to appropriate incident light.
  • the index of refraction may be approximately 1.8 to 2.3 and the thickness may be approximately 500 to 1200 ⁇ .
  • the anti-reflection film 8 may be manufactured by RECVD (plasma-enhanced chemical vapor deposition), by evaporation deposition, or by sputtering or the like.
  • the collector electrode 5 is formed on the second main surface 2 b side of the semiconductor substrate 2 .
  • the collector electrode 5 is formed coating a paste containing aluminum as the main component onto substantially the entire surface of the second main surface 2 b , with the exception of a width of approximately 1 to 5 mm at the outer periphery of the second main surface 2 b .
  • Screen printing can be used as the method of coating.
  • the paste used to form the collector electrode 5 is one made of aluminum powder and an organic vehicle that, after coating, is heat treated (fired) at a temperature of approximately 700 to 850° C. to burn the aluminum onto the semiconductor substrate 2 .
  • this aluminum paste By printing and firing this aluminum paste, it is possible to cause high-concentration diffusion of the aluminum, which is a p-type impurity, into the coated part of the semiconductor substrate 2 , and it is possible to change the n-type layer that is formed on the rear surface side as well into a layer of p + type.
  • electrodes (bus bar electrodes 3 and finger electrodes 4 ) on the first main surface 2 a side and the output lead-out electrodes 6 on the second main surface 2 b are formed.
  • the output lead-out electrodes 6 on the second main surface 2 b can be formed by coating with an electrically conductive paste containing silver, copper, and nickel as the main component.
  • an electrically conductive paste containing silver, copper, and nickel as the main component.
  • the inclusion of copper and nickel in the form of an alloy in an electrically conductive paste is desirable from the standpoint of improving the quality of the ohmic contact with the semiconductor substrate 2 of silicon and alleviating stress caused by the difference in the coefficient of thermal expansion between the semiconductor substrate 2 of silicon and the output lead-out electrodes 6 .
  • the electrically conductive paste for forming the output lead-out electrodes 6 is, for example, a mixture of silver particles; copper-nickel alloy particles; an organic vehicle; and glass frits (for example, aluminum borosilicate glass, bismuth oxide or the like).
  • silver particles have an average particle diameter of 0.1 to 5 ⁇ m
  • the copper-nickel alloy particles have an average particle diameter of 0.5 to 6 ⁇ m, made of an alloy of copper and nickel (hereinafter copper-nickel alloy) the surfaces of which are covered with silver to a thickness of 0.1 to 1.5 ⁇ m.
  • mixtures are mixed by kneading to have, with respect to 100 parts by mass of silver, copper, and nickel, 5 to 30 parts by mass and 0.1 to 15 parts by mass, respectively, of the organic vehicle and the glass frits, and additionally a solvent (such as terpineol, diethylene glycol monobutyl ether, or dibutyl phthalate or the like) is used to adjust the viscosity to approximately 50 to 200 Pa ⁇ s.
  • a solvent such as terpineol, diethylene glycol monobutyl ether, or dibutyl phthalate or the like
  • the above-noted kneading may be done beforehand, making two kneaded pastes, one of mixture of silver particles, the organic vehicle, and glass frits, and the other of mixture of the copper-nickel alloy particles covered by silver, the organic vehicle, and glass frits.
  • the above is preferable so that after that, these two pastes may be mixed in prescribed proportions and a solvent or the like may be used to adjust to a prescribed viscosity and to achieve a more homogeneous mixing of the silver particles and the copper-nickel alloy particles.
  • the above-noted electrically conductive paste may use a mixture of, for example, silver particles having an average particle diameter of 0.1 to 5 ⁇ m; copper-nickel alloy particles having an average particle diameter of 0.5 to 6 ⁇ m; an organic vehicle; and glass frits (for example, aluminum borosilicate glass or bismuth oxide).
  • this electrically conductive paste as well, conditions such as the amount of content and the viscosity of materials for other parts are made the same as those described above.
  • a paste containing silver particles and a paste containing copper-nickel alloy particles may be prepared, and these may be mixed by kneading to adjust the viscosity.
  • the above-noted electrically conductive paste may also use a mixture, for example, of silver particles having an average particle diameter of 0.1 to 5 ⁇ m; copper particles, the surfaces of which are covered with nickel and having an average particle diameter of 0.5 to 6 ⁇ m; an organic vehicle; and glass frits (for example, aluminum borosilicate glass or bismuth oxide).
  • a paste containing silver particles and a paste containing copper particles, the surfaces of which are covered by nickel may be prepared, and these may be mixed by kneading to adjust the viscosity.
  • the above-noted electrically conductive paste may use a mixture, for example, of nickel particles having an average particle diameter of 0.1 to 5 ⁇ m; copper particles, the surfaces of which are covered with silver and having an average particle diameter of 0.5 to 61 ⁇ m; an organic vehicle; and glass frits (for example, aluminum borosilicate glass, or bismuth oxide).
  • a paste containing nickel particles and a paste containing copper particles, the surfaces of which are covered by silver may be prepared, and these may be mixed by kneading to adjust the viscosity.
  • the method of coating the electrically conductive paste may be screen printing or the like, and it is preferable after coating to perform drying by causing transpiration of the solvent at a prescribed temperature.
  • the electrically conductive paste that contains silver particles adjusted as noted above and copper-nickel alloy particles, the surface of which is covered by silver, is coated onto the collector electrode 5 and, after drying, this is fired in a fire furnace at a maximum temperature of 500 to 650° C. for approximately several tens of seconds to several tens of minutes to form the output lead-out electrodes 6 .
  • an inert gas such as nitrogen gas, so that the oxygen concentration at a position in the vicinity of the peak temperature in the oven is less than 500 ppm.
  • the process step of forming the rear surface 2 b side electrodes may be, as described above, formation of the collector electrode 5 by coating and firing of an aluminum paste, followed by coating and firing of the above-described electrically conductive paste containing silver and the copper-nickel alloy to form the output lead-out electrodes 6 separately.
  • the process may be coating and drying of the aluminum paste, followed by coating of the electrically conductive paste containing silver and the copper-nickel alloy and then simultaneous firing of both.
  • the copper:nickel mass ratio of the copper-nickel alloy be in the range 95:5 to 60:40. If the copper proportion exceeds 95 the copper tends to oxidize, and the resistance value of the electrode after firing increases. On the other hand, if the proportion of the copper is less than 60, the proportion of nickel becomes excessive, and the resistance value of the electrode after firing increases. Because the photovoltaic conversion efficiency of the solar cell element decreases even if the proportion of copper is either high or low, the mass ratio is made the above-noted appropriate ratio.
  • the paste that has aluminum as the main component is coated and fired onto the semiconductor substrate 2 to form the collector electrode 5 , and the electrically conductive paste containing the copper-nickel alloy and silver is coated and fired thereover to form the output lead-out electrodes 6 , because the hardness is smaller than when using an electrically conductive paste of silver only, it is possible to alleviate stress caused by the difference in coefficients of thermal expansion, thereby enabling reduction in the warping of the semiconductor substrate 2 .
  • electrodes on the first main surface 2 a of the semiconductor substrate 2 are formed.
  • formation is desirably done by coating an electrically conductive paste containing silver and a copper-nickel alloy.
  • the electrically conductive paste for the formation of the bus bar electrodes 3 and the finger electrodes 4 as well contains silver and a copper-nickel alloy and is prepared under the above-described conditions. Also, the electrically conductive paste in this case as well can be coated by screen printing or the like, and it is preferably followed by transpiration to dry the solvent at a prescribed temperature.
  • firing is done in a fire furnace at a maximum temperature of 500 to 650° C., for approximately several tens of seconds to several tens of minutes to form the bus bar electrodes 3 and the finger electrodes 4 .
  • an inert gas such as nitrogen gas, so that the oxygen concentration at a position in the vicinity of the peak temperature in the oven is less than 500 ppm.
  • the firing of the electrically conductive paste for formation of the bus bar electrodes 3 and the finger electrodes 4 rather than being done separately, it is desirably done simultaneously with the firing of the electrically conductive paste for formation of the above-described output lead-out electrodes 6 , because it results in only one firing, and enables suppression of oxidation of the copper-nickel alloy.
  • a back-contact type solar cell element 21 has is constituted by a semiconductor substrate 25 that includes a main surface 21 a that serves as the light-receiving surface receiving sunlight, a second main surface 21 b that is the rear surface thereof, and that has a plurality of through holes 28 that pass through the first main surface 21 a and the second main surface 21 b.
  • the through holes 28 are filled with an electrically conductive filling material G, which is a conductor, forming through hole electrodes 22 b.
  • Light-receiving surface electrodes 22 a are provided on the first main surface 21 a of the solar cell element 21 as a plurality of narrow straight-line electrodes with substantially uniform spacing, and about one to five through hole electrodes 22 b are connected to each one light-receiving surface electrode 22 a at substantially the same positions thereon. In this manner, at least one through hole electrode 22 b is provided on one light-receiving surface electrode 22 a , enabling the density of the photoelectric current in each through hole electrode 22 b to be reduced, and enabling the resistive component of the solar cell element 21 to be reduced.
  • the first electrodes 22 c are formed on the second main surface 21 b and correspond to the electrodes on the first main surface 21 a . As shown in FIG. 3( b ), a plurality of the first electrodes 22 c , each having rectangular shape, are directly below and electrically connected to the through hole electrodes 22 b , and arranged in a straight line with a substantially uniform spacing. One of the first electrodes 22 c has one or a plurality of through hole electrodes 22 b connected thereto.
  • second electrodes 23 having a polarity that is different from that of the first electrodes 22 c is provided on the second main surface 21 b .
  • the second electrode 23 is constituted by collector electrode 23 a and output lead-out electrodes 23 b.
  • the collector electrode 23 a is disposed at the part other than the parts of the first electrodes 22 c that are disposed in the above-noted straight lines and the parts theresurrounding, and the output lead-out electrodes 23 b are pr vided on the collector electrode 23 a.
  • the output lead-out electrodes 23 b are provided at positions that are opposite on each of the collector electrodes 23 a so that the output lead-out electrodes 23 b sandwich the first electrodes 22 c .
  • the third electrodes 24 electrically connect two regions of the opposing output lead-out electrodes 23 b.
  • the semiconductor substrate 25 is mainly one conductivity type and, as shown in FIG. 4( a ) and FIG. 4( b ), has an opposite-conductivity type semiconductor layer 26 (first opposite-conductivity type layer 26 a and third opposite-conductivity type layer 26 c ) with a conductivity type different from that of the semiconductor substrate 25 on the first main surface 21 a and the second main surface 21 b of the semiconductor substrate 25 . Also, a second opposite-conductivity type layer 26 b is provided on the inner walls of the through holes 28 of the semiconductor substrate 25 .
  • an opposite-conductivity type layer 26 would be an n-type that is formed by diffusing an n-type impurity such as phosphorus into the semiconductor substrate 25 surface and inner walls of the electrode through holes 28 .
  • the collector electrode 23 a is formed over the high-concentration doped layer 30 .
  • the term high-concentration means an impurity concentration that is higher than the concentration of the one conductivity impurity in the semiconductor substrate 25 .
  • first electrodes 22 c are provided on the opposite-conductivity type semiconductor layer 26
  • collector electrode 23 a and output lead-out electrodes 23 b are formed as second electrodes 23 on the part in which the opposite-conductivity type semiconductor layer 26 is not formed.
  • separation trenches 29 a are provided in the peripheral area so as to surround the first electrodes 22 c , and a separation trench 29 b is further provided on the outer peripheral edge of the rear surface 21 b of the semiconductor substrate 25 , as shown in FIG. 3( h ).
  • the light-receiving surface electrodes 22 a , the through hole electrodes 22 b , the first electrodes 22 c and the output lead-out electrodes 23 b of the present embodiment are formed by coating an electrically conductive paste containing silver and a copper-nickel alloy using screen printing or the like, followed by firing. By doing this, it is possible to provide a solar cell element 21 having superior electricity generating efficiency, little warping, and high reliability.
  • a p-type silicon substrate doped with boron is prepared as the semiconductor substrate 25 that exhibits one conductivity type.
  • a single-crystal silicon substrate or a polycrystalline silicon substrate that is sliced from the silicon ingot may be used as this silicon substrate, the size of which is, for example, a rectangular with one side being approximately 140 to 180 mm, and the thickness of which is approximately 150 ⁇ m to 300 ⁇ m.
  • Through holes 28 are formed between the first main surface 21 a and rear surface 21 b of the semiconductor substrate 25 .
  • the through holes 28 are formed, for example, so as to pass from the second main surface 21 b side to the first main surface 21 a side of the semiconductor substrate 25 , using a mechanical drill, a water jet, or a laser apparatus or the like.
  • a laser apparatus or the like be used.
  • the laser used may be, for example, an excimer laser, a YAG (yttrium-aluminum-garnet) laser, or a YVO 4 (yttrium vanadate) laser.
  • the preferable diameter of the through holes 28 is approximately 20 to 50 ⁇ m.
  • the semiconductor substrate 25 in which the through holes 28 are provided is etched by approximately 5 to 20 mm, using an aqueous solution of sodium hydroxide having a sodium hydroxide content of approximately 10 to 30% wt at a temperature of 60 to 90° C.
  • the side surfaces on the inside of the through holes 28 are also etched and made rough surfaces.
  • This roughening enables an increase in the contact surface area with the electrically conductive filling material G, and enables an improvement in the adhesion strength between the two substances.
  • This etching also enables removal of a damaged layer occurring by slicing from the above-described silicon ingot. Additionally, it enables roughening of the first main surface 21 a as well, thereby suppressing reflection of light incident to the solar cell element 21 , and enabling an improvement in the photovoltaic conversion efficiency thereof.
  • the opposite-conductivity type layer 26 is formed on the surface of semiconductor substrate 25 .
  • a phosphor is used as an n-type doping element, to obtain an n + -type sheet resistance of approximately 60 to 300 ⁇ /square.
  • a pn junction part is formed between the opposite-conductivity type layer 26 and the p-type bulk region.
  • the opposite-conductivity type layer 26 when gas-phase diffusion, for example, is used in the opposite-conductivity type layer 26 , it is possible to simultaneously form the opposite-conductivity type layer 26 on both surfaces of the semiconductor substrate 25 and on the inner walls of the through holes 28 .
  • the formation of the opposite-conductivity type layer 26 b on the inner walls of the through holes 28 enables suppression of leakage current in that part.
  • an anti-reflection film 27 on the first opposite-conductivity type layer 26 a .
  • a silicon nitride film, a titanium nitride film or the like may be used as the material for the anti-reflection film 27 .
  • the method used for forming the anti-reflection film 27 may be PECVD, evaporation deposition, sputtering, or the like.
  • the electrically conductive paste for forming the light-receiving surface electrodes 22 a and the through hole electrodes 22 b is adjusted to a viscosity of approximately 50 to 200 Pa ⁇ s, under the same conditions described with regard to the double-sided electrode type solar cell element, by mixing silver particles, copper-nickel alloy particles, the surfaces of which are covered with silver, an organic vehicle, glass frits, or the like.
  • Screen printing or the like can be used as the method of coating the electrically conductive paste, followed by drying of the solvent by causing transpiration at a prescribed temperature.
  • an electrically conductive paste containing silver particles made under the same conditions as above and copper-nickel alloy particles covered with sifter is used in forming the light-receiving surface electrodes 22 a and the through hole electrodes 22 b , it is desirable to coat separately with different viscosities.
  • the electrically conductive paste is coated by screen printing, followed by drying.
  • firing is done in a firing furnace at a maximum internal furnace temperature of 500 to 650° C. for approximately several tens of minutes.
  • an inert gas such as nitrogen gas be introduced into the furnace so that the oxidation concentration at a position in the vicinity of the peak temperature within the furnace is less than 500 ppm.
  • the first electrodes 22 c , the output lead-out electrodes 23 b , and the third electrodes 24 are formed on the rear surface 21 b of the semiconductor substrate 25 .
  • the first electrodes 22 c , the output lead-out electrodes 23 b , and the third electrodes 24 are formed by using an electrically conductive paste containing silver particles and copper-nickel alloy particles, the surfaces of which are covered with silver, as described above.
  • an electrically conductive paste containing silver and copper-nickel alloy is coated onto to the rear surface 21 b of the semiconductor substrate, for example, followed by firing to form the first electrodes 22 c , the output lead-out electrodes 23 b , and the third electrodes 24 shown in FIG. 3( b ).
  • firing is done in a firing furnace at a maximum internal furnace temperature of 500 to 650° C. for approximately several tens of minutes.
  • an inert gas such as nitrogen so that the oxygen concentration at a position in the vicinity of the peak temperature in the furnace is less than 500 ppm.
  • the pn separation process will be described.
  • the opposite-conductivity type layer 26 is simultaneously formed on both surfaces of the semiconductor substrate 25 and on the inner walls of the through holes 28 .
  • separation is done between the opposite-conductivity type layer 26 of the rear surface 21 b and the first main surface 21 a of the semiconductor substrate 25 .
  • the pn separation can be done by the following two methods.
  • a powder of silicon oxide, alumina, or the like is blown at a high pressure onto only the peripheral part of the rear surface 21 b so that the opposite-conductivity type layer of the surrounding part of the rear surface 21 b is shaved off.
  • a separation trench 29 b is formed in the peripheral edge part of the rear surface 21 b.
  • pn separation of the first electrodes 22 c peripheral part is done.
  • Laser light from, for example, a YAG laser (1064 nm wavelength) is caused to strike the peripheral part of the first electrodes 22 c , that is, the part of the semiconductor substrate 25 formed between the first electrodes 22 c and the collector electrode 23 a , that is, the first electrodes 22 c and the third electrodes 24 , so as to form the rectangular separation trenches 29 a.
  • the bus bar electrode 3 provided on the first main surface 2 a side in the double-sided electrode type solar cell element 1 was photographed at a magnification of 5000 using a SEM (scanning electron microscope), a copies of those photographs being shown in FIG. 5 and FIG. 6 .
  • FIG. 6 is a magnified view of an electrode obtained by firing an electrically conductive paste containing, as described above, silver particles with an average particle diameter of 0.1 to 5 ⁇ m and copper particles with an average particle size of 0.5 to 6 ⁇ m, with a nickel covering having a thickness of 0.1 to 1.5 ⁇ m on the surfaces thereof.
  • first metal regions 33 regions shown by inclined hatching lines
  • second metal region 34 that has silver and nickel as the main component.
  • a p-type semiconductor substrate 2 made from polycrystalline silicon manufactured by casting was prepared.
  • the semiconductor substrate 2 contained approximately 1 ⁇ 10 16 to 10 18 atoms/cm 3 of boron, which is a p-type doping element, and was a square having sides of approximately 150 mm, with a thickness of approximately 0.2 mm.
  • the surface of the semiconductor substrate 2 was etched by a very small amount in an aqueous solution of sodium hydroxide of approximately 20%, after which it was washed.
  • an RIE (reactive ion etching) apparatus was used to form fine unevenness structure with the function of reducing a light reflectivity in (i.e., roughen the surface of) the first main surface 2 a side of the semiconductor substrate 2 , which will be the light incidence surface.
  • an n-type layer 9 was formed over the entire surface of the semiconductor substrate 2 .
  • Phosphorus was used as the n-type doping element, to obtain an n-type sheet resistance that is made approximately 50 to 100 ⁇ /square.
  • a pn junction part was formed between the n-type layer 9 and the p-type bulk region that occupies most of the region of the semiconductor substrate 2 .
  • the n-type layer 9 was formed in the following manner.
  • the semiconductor substrate 2 was heated to a temperature of approximately 700 to 900° C. and, while maintaining the temperature, was subjected to gas-phase thermal diffusion processing for approximately 20 to 40 minutes in an atmosphere of POCl 3 (phosphorus oxychloride), which was gasified as the diffusion source, so as to form the n-type layer 9 to a depth of approximately 0.3 to 0.6 ⁇ m.
  • POCl 3 phosphorus oxychloride
  • the semiconductor substrate 2 was immersed in hydrofluoric acid for approximately 10 seconds, after which it was washed and dried.
  • the anti-reflection film 8 was formed. That is, as the anti-reflection film 8 , an SiN x (silicon nitride) film was deposited onto the surface of the first main surface 2 a side by PECVD (plasma-enhanced chemical vapor deposition) apparatus, using monosilane gas and ammonia gas at a temperature of approximately 450° C. For the SiN x film to have an anti-reflection effect, it was given an index of refraction of approximately 2.0 and a film thickness of approximately 80 nm.
  • PECVD plasma-enhanced chemical vapor deposition
  • a laser beam was shined onto the peripheral edge part of the second main surface 2 b side of the semiconductor substrate 2 to form a separation trench to deeper than a depth that reaches the pn junction part.
  • a YAG laser apparatus was used in this separation.
  • the collector electrode 5 was formed on the second main surface 2 b side of the semiconductor substrate 2 .
  • the collector electrode 5 was formed by coating a paste having aluminum as the main component over substantially the entire surface of the second main surface 2 b , using screen printing, with the exception of the peripheral part of approximately 1 mm.
  • the paste used to form the collector electrode 5 was made of aluminum powder and an organic vehicle that, after coating, was fired at a maximum temperature of approximately 800 to 850° C. to burn it onto the semiconductor substrate 2 .
  • the thickness of the collector electrode 5 after firing was approximately 30 to 50 ⁇ m.
  • the first main surface 2 a electrodes (bus bar electrodes 3 and finger electrodes 4 ) were formed on the anti-reflection film 8 on the surface of the first main surface 2 a side.
  • an electrically conductive paste similar to the paste containing the silver and copper-nickel alloy that formed the output lead-out electrodes 6 in each test sample cell was coated by screen printing.
  • the electrically conductive paste coated onto the collector electrode 5 and the electrodes on the first main surface 2 a were fired. This firing was performed after coating and drying the electrically conductive paste, by firing for several minutes at a maximum temperature of 500 to 600° C. within the firing furnace, and so that the oxygen concentration at a position in the vicinity of the peak temperature in the furnace was an atmosphere of 180 to 370 ppm.
  • the output lead-out electrodes 6 , the bus bar electrodes 3 and the finger electrodes 4 after the firing had a thickness of approximately 10 to 20 ⁇ m.
  • the warping (height) of the test sample solar cell elements on which the output lead-out electrodes 6 , the bus bar electrodes 3 , and the finger electrodes 4 were formed using the above-noted pastes P 1 to P 10 was measured as noted below.
  • FIG. 7 is a cross-sectional view showing the warping W. That is, the warping W was measured as the height to the uppermost part of the test sample cell 12 from a flat and horizontal surface when the test sample solar cell element 12 was placed on the surface so that that it warps upward at the center.
  • FIG. 8 shows the warping with each of the other pastes as indices.
  • the photovoltaic conversion efficiency of each sample cell in which the output lead-out electrodes 6 , the bus bar electrodes 3 , and the finger electrodes 4 had been formed using the above-noted pastes P 1 to P 10 were measured using simulated sunlight of AM 1.5 and 100 MW/cm 2 at a solar cell element surface temperature of 25° C.
  • FIG. 9 shows, with the photovoltaic conversion efficiency when using the paste P 1 as 100, the photovoltaic conversion efficiencies when using each of the other pastes as indices.
  • pastes P 8 to P 10 showed a sudden decrease. This is thought to be because although the addition of copper and nickel improves the ohmic contact with the semiconductor substrate 2 of silicon and the photovoltaic conversion efficiency improves, if the amount of copper and nickel added becomes excessive the resistance increases because of copper oxidation and the effect of nickel and the like, causing a decrease in the quality of the ohmic contact.
  • the photovoltaic conversion efficiency of the solar cell element is improved.
  • FIG. 10 the results of measurements regarding the strength of intimate contact of the solar cell elements fabricated using the pastes P 5 , P 6 , and P 7 are shown in FIG. 10 .
  • one end of ribbon-shaped lead wires approximately 5 cm in length were soldered to locations.
  • the locations had a size of approximately 2 mm ⁇ 2 mm when seen in plan view at the center parts of the center parts of the linear electrodes with respect to all three linear bus bar electrodes 3 provided on the first main surface 2 a side of the solar cell element 1 .
  • the ribbon-shaped lead wires were bent upward from the soldered locations at approximately 90°, the other end of the ribbon-shaped lead wires was connected to a push-pull gauge, and the push-pull gauge was pulled them upward at a rate of approximately 6 mm/minute.
  • the pulling load when the bus bar electrodes 3 were peeled away from the semiconductor substrate 2 was measured and the average load was calculated for each solar cell element, this being taken as the strength of the intimate contact between the bus bar electrodes 3 and the semiconductor substrate 2 .
  • FIG. 10 shows the values for the paste P 5 and the paste P 7 , with the value for the paste P 6 taken as 100. From these measurement results, it was understood that paste P 5 had the best strength of intimate contact.
  • the electrodes contain by metal equivalent copper of at least 10 parts by mass and no greater than 135 parts by mass, and nickel of at least 1 part by mass and no greater than 15 parts by mass, with respect to 100 parts by mass of silver, compared to the solar cell element having electrodes made of silver only, it is possible to reduce the warping and also to manufacture a solar cell element 1 with improved photovoltaic conversion efficiency.

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NL1038916C2 (en) 2011-07-01 2013-01-07 Stichting Energie Photovoltaic cell with wrap through connections.
US8574951B1 (en) * 2013-02-20 2013-11-05 National Tsing Hua University Process of manufacturing an interdigitated back-contact solar cell
US10056505B2 (en) 2013-03-15 2018-08-21 Inkron Ltd Multi shell metal particles and uses thereof
CN103700716B (zh) * 2013-12-31 2016-12-07 山东宇太光电科技有限公司 一种晶硅太阳能电池新型正面电极
US20160284913A1 (en) 2015-03-27 2016-09-29 Staffan WESTERBERG Solar cell emitter region fabrication using substrate-level ion implantation
CN108352414B (zh) 2015-08-14 2021-09-28 汉高股份有限及两合公司 用于太阳能光伏电池的可烧结组合物
CN109524503B (zh) * 2018-10-18 2022-08-30 东君新能源有限公司 一种光伏电池的电极引出孔的钻孔方法
CN114361270A (zh) * 2022-02-09 2022-04-15 福建金石能源有限公司 一种银用量低的异质结太阳能电池及其制作方法

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US20130025677A1 (en) 2013-01-31

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