US9070738B2 - SCR component with temperature-stable characteristics - Google Patents

SCR component with temperature-stable characteristics Download PDF

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US9070738B2
US9070738B2 US14/494,692 US201414494692A US9070738B2 US 9070738 B2 US9070738 B2 US 9070738B2 US 201414494692 A US201414494692 A US 201414494692A US 9070738 B2 US9070738 B2 US 9070738B2
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Samuel Menard
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STMICROELECTRONICS INTERNATIONAL NV
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STMicroelectronics Tours SAS
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Definitions

  • the present disclosure relates to SCR-type components of vertical structure and to the manufacturing of such components.
  • SCR-type components are components having a structure including a stack of at least four semiconductor layers and/or regions of alternated conductivity types. Such components are, for example, thyristors, triacs, unidirectional or bidirectional Shockley diodes.
  • FIGS. 1A and 1B respectively are a top view and a cross-section view of an example of a thyristor.
  • FIG. 1B is a cross-section view along broken line B-B of FIG. 1A .
  • These drawings schematically show the thyristor comprising a vertical stack of four semiconductor layers and/or regions 3 , 5 , 7 , and 9 having alternated conductivity types, respectively PNPN.
  • Heavily-doped N-type region 9 (N+) is formed in P-type doped layer 7 .
  • a cathode metallization 11 covers region 9 .
  • a gate metallization 13 covers a central portion 14 of layer 7 .
  • An anode metallization 15 covers the lower surface of layer 3 .
  • Metallizations 11 , 13 , and 15 respectively form a cathode electrode K, a gate electrode G, and an anode electrode A.
  • Region 9 is interrupted in areas 17 where cathode metallization 11 comes into contact with layer 7 .
  • Areas 17 are currently called emitter short-circuits or emitter short-circuit holes. Such emitter short-circuits 17 are known to improve the dV/dt behavior of the thyristor, thus decreasing the risk of untimely turning-on of the thyristor by voltage peaks.
  • two curves 20 and 22 respectively illustrate the temperature dependence T of turn-on current I GT and of hold current I H in a thyristor of the type described in relation with FIGS. 1A and 1B .
  • the values of the current are indicated as values normalized with respect to their value at 25° C.
  • Curves 20 and 22 show that the values of currents I H and I GT decrease as temperature T increases.
  • the value of I GT is two times greater than at 25° C. and, at 140° C., the value of I GT is approximately two times smaller than at 25° C.
  • the dI/dt characteristic on switching and the dV/dt turn-on characteristic of a thyristor also depend on the operating temperature.
  • An SCR-type component having characteristics which remain as constant as possible over the entire operating temperature range of the component is needed.
  • an embodiment provides an SCR-type component of vertical structure having a main upper electrode formed on a silicon region of a first conductivity type, itself formed in a silicon layer of the second conductivity type, wherein said region is interrupted: in first areas where the material of said layer comes into contact with said electrode, and in second areas made of resistive porous silicon extending between said layer and said electrode.
  • the thickness of the second porous silicon areas is greater than the thickness of the region.
  • the resistivity at 25° C. of the porous silicon is in the range from 10 3 to 10 4 ⁇ cm.
  • the first areas and the second areas are regularly distributed across the surface of the region.
  • the number of first areas is identical to the number of second areas.
  • An embodiment provides a method of manufacturing porous silicon areas in an SCR-type component with a well, comprising the successive steps of: providing a semiconductor structure comprising a silicon region of a first conductivity type formed in a silicon layer of the second conductivity type, said region being interrupted in areas, the structure being laterally delimited by a peripheral silicon wall of the second conductivity type; depositing a masking layer on the upper surface of the structure by leaving said areas and the upper surface of the peripheral wall exposed; plunging the assembly in electrolytic baths, a first bath being in contact with the upper surface of the structure, a second bath being in contact with the lower surface of the structure, a positive electrode and a negative electrode being respectively plunged into the second bath and into the first bath; and applying a voltage between the positive electrode and the negative electrode to have a current flow in the peripheral wall, a portion of the current flowing in said layer and the areas to form porous silicon in said areas.
  • the electrolytic baths are made of a mixture comprising water, hydrofluoric acid, ethanol, or acetic acid.
  • FIGS. 1A and 1B previously described, respectively are a top view and a cross-section view of an example of thyristor
  • FIG. 2 shows the temperature dependence of currents I GT and I H in a thyristor
  • FIGS. 3A and 3B respectively are a top view and a cross-section view of an embodiment of a thyristor
  • FIG. 4 shows the variation of current I GT according to temperature in different thyristors
  • FIGS. 5A and 5B are cross-section views illustrating a method of manufacturing porous silicon areas.
  • FIGS. 3A and 3B respectively are a top view and a simplified cross-section view of an embodiment of a thyristor.
  • FIG. 3B is a cross-section view along broken line B-B of FIG. 3A .
  • the same elements are designated with the same reference numerals as in FIGS. 1A and 1B .
  • emitter short-circuits 17 are formed by the material of layer 7 , which is P-type doped silicon.
  • some of the emitter short-circuits 17 are instead formed with emitter short-circuits, referred to as 30 , that are made of slightly-conductive porous silicon.
  • the porous silicon of emitter short-circuits 30 extends from cathode metallization 11 into layer 7 , preferably through the entire thickness of region 9 , and may partly extend below the region 9 in region 7 .
  • the porous silicon of emitter short-circuits 30 is resistive to enable a current to flow there-through between cathode metallization 11 and layer 7 .
  • the resistivity at 25° C. of the porous silicon of emitter short-circuits 30 is selected in a range from 10 3 to 10 4 ⁇ cm.
  • Emitter short-circuits 17 and 30 there are the same number of silicon emitter short-circuits 17 and of porous silicon emitter short-circuits 30 .
  • Emitter short-circuits 17 and 30 may be regularly arranged across the surface of region 9 .
  • the thicknesses of the different layers and/or regions could be:
  • the doping concentrations could for example be:
  • FIG. 4 shows the temperature dependence of current IGT in different thyristors.
  • a curve 40 illustrates the variation of current IGT according to temperature for a thyristor of the type described in relation with FIGS. 1A and 1B .
  • current I GT decreases significantly as the temperature increases.
  • current I GT has a value of 4.4 mA at 0° C.; to be compared with 1 mA only at 140° C.
  • Curve 42 illustrates the temperature dependence of current I GT in a thyristor of same dimensions and doping levels as the thyristor corresponding to curve 40 , but comprising porous silicon emitter short-circuits 30 .
  • Current I GT is 2.3 mA at 0° C. and 1 mA at 140° C.
  • Curve 44 illustrates the temperature dependence of current I GT in a thyristor similar to the thyristor corresponding to curve 42 , but where the thickness of region 9 has been decreased.
  • Current I GT is 3.3 mA at 0° C. and 2 mA at 140° C.
  • Current I GT of a thyristor is inversely proportional to the value of resistance R GK between gate metallization 13 and cathode metallization 11 .
  • the value of resistance R GK is mainly dependent on the resistivity of the doped silicon of layer 7 . Since the resistivity of silicon depends significantly on the temperature and increases as the temperature increases, resistance R GK increases with temperature and it can be understood that the value of current I GT decreases with temperature.
  • resistance R GK depends not only on the resistivity of the P-type doped silicon but also on the resistivity of the resistive porous silicon of emitter short-circuits 30 . At least in the operating temperature range of the thyristor, which may be between ⁇ 40 and 150° C., conversely to the resistivity of single-crystal silicon, the resistivity of the porous silicon decreases as the temperature increases. The resistivity of these two materials varying in opposite manner when the temperature varies, resistance R GK and current I GT are less temperature-dependent.
  • Total gate current I GT is shared between paths I 1 and I 2 and becomes less temperature-dependent.
  • porous silicon emitter short-circuits 30 associated with doped silicon emitter short-circuits 17 improve the temperature stability of current I GT
  • porous silicon emitter short-circuits 30 also improve the temperature stability of hold current I H , of the dV/dt turning-on, and of the switching dI/dt of an SCR-type component, for example, of a thyristor.
  • FIGS. 5A and 5B are cross-section views illustrating an embodiment of a method of manufacturing porous silicon areas in an SCR component, such as a thyristor, with emitter short-circuits.
  • the thyristor is of the type having a well, laterally delimited by a P-type doped peripheral wall 50 .
  • FIG. 5A shows a thyristor structure comprising a stack of four semiconductor regions and/or layers 3 , 5 , 7 , and 9 having alternated conductivity types, respectively PNPN, such as described in relation with FIGS. 1A , 1 B, 3 A, and 3 B.
  • Heavily-doped N-type region 9 (N + ) is interrupted in a central portion 14 and in areas 17 and 17 ′. In areas 17 and 17 ′, the material of P-type doped layer 7 comes into contact with the upper surface of the structure.
  • An electrically-insulating masking layer 52 covers the entire upper surface of the structure except for peripheral wall 50 and for areas 17 ′.
  • layer 52 may be made of Si 3 N 4 .
  • Electrolytic baths 54 and 56 are respectively in contact with the upper surface and with the lower surface of the thyristor. A positive electrode and a negative electrode area are respectively plunged into bath 56 and into bath 54 .
  • electrolytic baths 54 and 56 may be made of a mixture comprising water, hydrofluoric acid, ethanol, or acetic acid.
  • a current 58 flows from the positive electrode to the negative electrode through bath 56 , lateral region 50 , and bath 54 .
  • FIG. 5B shows the thyristor obtained after treatment.
  • a porous silicon insulating region 62 has been formed in the upper portion of peripheral wall 50 during the flowing of current 58 .
  • Region 62 extends in the entire upper portion of wall 50 and may have a thickness greater than that of layer 7 .
  • resistive porous silicon 30 has been formed from the upper surface of the thyristor all the way to layer 7 , through the entire thickness of region 9 , and may partly extend into layer 7 .
  • the thickness, the resistivity, and the porosity of the porous silicon of emitter short-circuits 30 may be adjusted by those skilled in the art by selecting the nature and the concentration of the electrolytic baths, the value of current 58 , the current flow time and the doping layer of layer 7 .
  • Porous silicon area 62 will be more resistive than regions 30 if a doping level smaller than that of layer 7 is selected for wall 50 , for example, respectively from 10 16 to 10 17 at./cm 3 and more than 10 18 at./cm 3 .
  • the thyristor comprises eight emitter short-circuit holes, this number may vary and be smaller or much greater.
  • the ratio of the number of porous silicon emitter short-circuits 30 to the number of silicon emitter short-circuits 17 may be different from 1.
  • porous silicon emitter short-circuits in SCR-type components to obtain temperature-stable characteristics
  • the emitter short-circuits may easily be adapted by those skilled in the art for any type of SCR component, for example, triacs or uni- or bidirectional Shockley diodes, with the same results on the temperature stability of the characteristics of the components.
  • bidirectional components symmetrical structures comprising emitter short-circuits of the two previously-described types on each of their surfaces may be provided.

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