US8786359B2 - Current mirror device and method - Google Patents

Current mirror device and method Download PDF

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Publication number
US8786359B2
US8786359B2 US11/954,924 US95492407A US8786359B2 US 8786359 B2 US8786359 B2 US 8786359B2 US 95492407 A US95492407 A US 95492407A US 8786359 B2 US8786359 B2 US 8786359B2
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transistor
transistors
voltage
input
coupled
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US20090153234A1 (en
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Ekram Hossain Bhuiyan
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SanDisk Technologies LLC
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SanDisk Technologies LLC
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Assigned to SANDISK CORPORATION reassignment SANDISK CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BHUIYAN, EKRAM HOSSAIN
Priority to US11/954,924 priority Critical patent/US8786359B2/en
Priority to KR1020107012257A priority patent/KR20100097670A/ko
Priority to EP08859669.7A priority patent/EP2243062B1/fr
Priority to JP2010538082A priority patent/JP2011507105A/ja
Priority to CN2008801190966A priority patent/CN101884020B/zh
Priority to PCT/US2008/085905 priority patent/WO2009076304A1/fr
Priority to TW097148571A priority patent/TWI460990B/zh
Publication of US20090153234A1 publication Critical patent/US20090153234A1/en
Assigned to SANDISK TECHNOLOGIES INC. reassignment SANDISK TECHNOLOGIES INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SANDISK CORPORATION
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors

Definitions

  • the present disclosure is generally related to current mirror devices and methods of using current mirror devices.
  • Advances in electronic device technology have resulted in smaller devices that consume less power during operation. Reduced power consumption is often a result of smaller device features and devices operating at lower supply voltages. However, as supply voltages decrease, device operation often becomes more sensitive to fluctuations in the supply voltage.
  • some devices include multiple voltage domains to accommodate circuits that operate at different supply voltages. However, a supply voltage for a second voltage domain generated by circuitry of a first voltage domain may be sensitive to fluctuations of the supply voltage of the first voltage domain.
  • a circuit in a particular embodiment, includes a current mirror including a first set of transistors and a second set of transistors. At least one of the transistors in the first set of transistors and at least one of the transistors in the second set of transistors is in a cascode arrangement.
  • the circuit includes a first operational amplifier coupled to the first set of transistors.
  • the circuit also includes a second operational amplifier coupled to the second set of transistors.
  • the circuit in another embodiment, includes a current mirror including a first transistor pair and a second transistor pair.
  • the first transistor pair includes a first transistor and a second transistor.
  • the second transistor pair includes cascode transistors.
  • the circuit also includes a first operational amplifier having an output coupled to both the first transistor and the second transistor.
  • the circuit in another embodiment, includes a current mirror including a first set of transistors and a second set of transistors. At least one transistor in the second set of transistors is disposed in a cascode arrangement.
  • the circuit includes a first operational amplifier coupled to the first set of transistors.
  • the circuit also includes a second operational amplifier coupled to the second set of transistors.
  • the circuit includes a current source coupled to one of the transistors of the second set of transistors.
  • the first operational amplifier has a first input of a first bias voltage and the second operational amplifier has a first input of a second bias voltage.
  • the first set of transistors is coupled to a supply voltage. The first bias voltage is different than the supply voltage.
  • a first of the transistors of the second set of transistors is coupled to a second input to the first operational amplifier to define a first feedback loop.
  • An output of one of the transistors in the first set of transistors is provided as a second input to the second operational amplifier to define a second feedback loop.
  • a second of the transistors of the second set of transistors has an output that drives an output current.
  • a method of using a circuit device includes receiving a first bias voltage at a first input of a first operational amplifier coupled to a first set of transistors.
  • the method includes receiving a second bias voltage at a first input of a second operational amplifier coupled to a second set of transistors.
  • the first set of transistors and the second set of transistors form a current mirror.
  • the current mirror is coupled to a supply voltage, and the first bias voltage differs from the supply voltage.
  • a first of the transistors in the second set of transistors is coupled to a second input of the first operational amplifier to define a first feedback loop.
  • An output of one of the transistors in the first set of transistors is provided as a second input to the second operational amplifier to define a second feedback loop.
  • a second of the transistors of the second set of transistors has an output that drives an output current of the current mirror.
  • One particular advantage provided by embodiments of the current mirror is robust operation since the output current is insensitive to variations in the voltage supply. Another advantage is that a voltage domain may be supplied with an output voltage level held at a reference voltage level that is independent of the supply voltage of the current mirror circuit. Another advantage is that low power operation is enabled by operation at a low supply voltage.
  • the disclosed current mirror circuit device can drive a high frequency oscillator with lower supply voltage, better output impedance, and increased insensitivity to fast output voltage swings.
  • FIG. 1 is a circuit diagram of a first embodiment of a current mirror device
  • FIG. 2 is a circuit diagram of a second embodiment of a current mirror device
  • FIG. 3 is a flow chart of an embodiment of method of using a current device.
  • FIG. 4 is a block diagram of a system including a current mirror circuit.
  • the circuit device 100 includes a first operational amplifier 102 and a second operational amplifier 110 .
  • the circuit device 100 also includes a current mirror including a first set of transistors, such as a first pair of transistors including a first transistor 122 and a second transistor 132 and a second set of transistors, such as a second pair of transistors including a third transistor 124 and a fourth transistor 134 .
  • At least one of the transistors in the second set of transistors is in a cascode arrangement.
  • the transistor 124 or the transistor 134 or both may be in a cascode arrangement.
  • the first operational amplifier 102 is coupled to the first transistor 122 and to the second transistor 132 .
  • the first operational amplifier 102 has a first input of a first bias voltage (Vbias 1 ) 104 and has a second input 106 responsive to a feedback signal that is provided from a node 125 coupled to the third transistor 124 .
  • Vbias 1 first bias voltage
  • the second operational amplifier 110 has a first input 114 responsive to a node 123 coupled to the first transistor 122 and a second input 112 which is responsive to a second bias voltage (Vbias 2 ).
  • the second bias voltage provided at input 112 is substantially fixed and independent of variations of a supply voltage 118 provided to the current mirror via current paths 120 and 130 .
  • the second bias voltage can be set to a range 190 of available voltages 141 - 144 , such as the supply voltage 118 less the drain to source saturation voltage (Vdd ⁇ Vds sat ) 143 of a single transistor.
  • the transistors 122 and 124 in the first current path 120 are coupled to receive an input from a current source 126 that is coupled to the node 125 and to ground 128 .
  • the transistors 132 and 134 in the second current path 130 are coupled to provide an output voltage and an output current 136 at output node 135 .
  • the output current 136 is provided by an output of the fourth transistor 134 .
  • the output voltage of the current mirror is limited by the second bias voltage.
  • the first transistor pair ( 122 and 132 ) is coupled to the supply voltage 118 , and the supply voltage 118 is different from the first bias voltage 104 and the second bias voltage 112 .
  • variations in the supply voltage 118 are isolated from other parts of the circuit 100 by use of the bias voltages 104 and 112 .
  • an output of the third transistor 124 is provided as an input to the first operation amplifier 102 via node 125 to define a first feedback loop.
  • an output of the first transistor 122 is provided as an input to the second operational amplifier 110 via node 123 to define a second feedback loop.
  • the feedback loops enable the operational amplifiers 102 and 110 to maintain constant bias independent of the supply voltage 118 .
  • each of the transistors 122 , 124 , 132 , 134 in the first and second sets of transistors that define the current mirror are field effect type transistors as illustrated.
  • An example of a suitable field effect type transistor is a metal oxide field effect transistor (MOSFET).
  • each of the four transistors in the current mirror are bipolar transistor type devices.
  • the first transistor 222 , the second transistor 224 , the third transistor 232 , and the fourth transistor 234 are each bipolar type devices as illustrated.
  • the remaining portions of the circuit device 200 illustrated in FIG. 2 are substantially similar to the elements shown in respect to FIG. 1 .
  • the method of using the circuit device includes receiving a first bias voltage at a first input of a first operational amplifier that is coupled to a first set of transistors, at 302 .
  • An example of the first operational amplifier is the first operational amplifier 102 in FIG. 1 or the first operational amplifier 202 in FIG. 2 .
  • An example of the first bias voltage is the first bias voltage (Vbias 1 ) provided at input 104 in FIG. 1 or at the input 204 in FIG. 2 .
  • the method includes receiving a second bias voltage at a first input of a second operational amplifier that is coupled to a second set of transistors, as shown at 304 .
  • An example of a second bias voltage provided to a second operational amplifier is the second bias voltage (Vbias 2 ) 112 provided to the second operational amplifier 110 in FIG. 1 or the second bias voltage 212 provided to the second operational amplifier 210 in FIG. 2 .
  • the method further includes providing current to at least one of the transistors in the second set of transistors from a current source.
  • a current source is the current source 126 shown in FIG. 1 or the current source 226 shown in FIG. 2 .
  • the second set of transistors may include a second transistor pair such as the transistors 124 and 134 shown in FIG. 1 or the transistors 224 and 234 shown in FIG. 2 .
  • the method further includes adjusting a first output of the first operational amplifier based on a first feedback signal received at a second input of the first operational amplifier, as shown at 308 .
  • a first of the transistors of the second set of transistors is coupled to the second input to the first operational amplifier to define a first feedback loop.
  • the first output of the first operational amplifier 102 may be adjusted based on a feedback signal received at the second input 106 provided by the first feedback loop coupled to node 125 , as shown in FIG. 1 .
  • the method further includes adjusting a second output of the second operational amplifier based on a second feedback signal received at a second input of the second operational amplifier, at 310 .
  • An output of one of the transistors in the first set of transistors is provided as the second input to the second operational amplifier to define a second feedback loop.
  • the second output 116 of the second operational amplifier 110 may be adjusted in response to an input received at 114 via the second feedback loop provided in response to transistor 122 coupled via node 123 , as shown in FIG. 1 .
  • the method further includes providing the first output from the first operational amplifier to the first set of transistors and providing the second output of the second operational amplifier to the second set of transistors of a current mirror that mirrors current from the current source to provide a resulting output current, as shown at 312 .
  • the first output 108 from the first operational amplifier 102 may be provided to the current mirror including transistors 122 , 132 , 124 , 134 , such that the current provided through a first current path 120 is mirrored and a substantially equal current is then provided via an output of a transistor of the second current path 130 , which drives an output current 136 that substantially matches the input current 126 , as shown in FIG. 1 .
  • the method further includes providing the output current of the current mirror to a high speed analog circuit, as shown at 314 .
  • the output current 136 or the output current 236 , may be provided to a high speed analog circuit, such as an oscillator or other similar type of analog circuit.
  • the output voltage associated with the output current 136 may be provided to a different voltage domain where the different voltage domain has a voltage supply limited by the second bias voltage 112 provided to the second operational amplifier 110 . In this manner, separate and isolated voltage supplies may be provided to different voltage domains within an integrated circuit device.
  • the second bias voltage is a fixed and substantially stable voltage that may be provided by a reference voltage circuit.
  • the supply voltage such as the supply voltage 118 in FIG. 1 or the supply voltage 218 in FIG. 2 , is approximately equal to four times the drain to source voltage (Vds) of one of the transistors in the first set of transistors, such as the drain to source voltage of transistors 122 or 132 in FIG. 1 .
  • the supply voltage is less than one volt and may be approximately equal to 0.8 volts in the case where the drain to source voltage is approximately 0.2 volts.
  • FIG. 4 a particular illustrative embodiment of a system 400 that includes a cascode current mirror circuit, such as the circuit devices shown in FIG. 1 and FIG. 2 , is illustrated.
  • the system 400 includes a supply voltage source 410 which is provided via supply line 408 to the cascode current mirror circuit including two or more operational amplifiers 402 .
  • the current mirror with operational amplifiers 402 is a circuit, such as those illustrated with respect to FIG. 1 or FIG. 2 .
  • the cascode current mirror device 402 is responsive to a current source 412 and receives current at an input 414 .
  • the cascode current mirror device 402 receives a reference voltage 404 from a reference voltage circuit 406 .
  • the reference voltage circuit 406 may be a band gap type reference voltage circuit to provide a substantially stable and fixed voltage.
  • the reference voltage circuit 406 provides a first bias voltage and a second bias voltage as inputs to two operational amplifiers of the cascode current mirror device 402 .
  • the cascode current mirror device 402 provides an output current 416 and an output voltage to a representative high speed analog circuit device and/or a different voltage domain 418 .
  • the high speed analog circuit device and/or different voltage domain 418 is an oscillator or similar high frequency circuit.
  • an improved current mirror may exhibit higher effective output impedance, lower supply voltage and increased insensitive to fast output voltage swing.
  • Two operational amplifier loops are used to regulate top and bottom transistor pairs in a cascode arrangement of a current mirror device to improve a resulting output impedance and to reduce supply voltage requirements.
  • a first and second current path has been shown in FIG. 1 and FIG. 2 , it should be understood that additional parallel current paths can be added to provide multiple current outputs of the current mirror.
  • the input current source may be implemented using additional cascode transistors. In this case, the minimum voltage required for each of the paths of the current mirror is only four times the drain to source saturation voltage of a single transistor, which is approximately equal to 0.8 volts.
  • the disclosed circuit device may beneficially provide a current mirror that can adjust quickly to high speed analog circuits, such as oscillator and similar applications.
  • the current ratio of the current mirror is substantially independent of the supply voltage. Therefore, the disclosed circuit has decreased sensitivity of the output current versus the supply voltage to the current mirror circuit.
  • the disclosed current mirror circuit with multiple operational amplifiers provides an improvement for high speed analog circuit device operations at low voltages.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
US11/954,924 2007-12-12 2007-12-12 Current mirror device and method Active 2028-04-27 US8786359B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US11/954,924 US8786359B2 (en) 2007-12-12 2007-12-12 Current mirror device and method
KR1020107012257A KR20100097670A (ko) 2007-12-12 2008-12-08 전류 미러 디바이스 및 방법
EP08859669.7A EP2243062B1 (fr) 2007-12-12 2008-12-08 Dispositif miroir de courant, et procédé
JP2010538082A JP2011507105A (ja) 2007-12-12 2008-12-08 電流ミラー装置および方法
CN2008801190966A CN101884020B (zh) 2007-12-12 2008-12-08 电流镜器件和方法
PCT/US2008/085905 WO2009076304A1 (fr) 2007-12-12 2008-12-08 Dispositif miroir de courant, et procédé
TW097148571A TWI460990B (zh) 2007-12-12 2008-12-12 電流鏡裝置和方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/954,924 US8786359B2 (en) 2007-12-12 2007-12-12 Current mirror device and method

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US20090153234A1 US20090153234A1 (en) 2009-06-18
US8786359B2 true US8786359B2 (en) 2014-07-22

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US (1) US8786359B2 (fr)
EP (1) EP2243062B1 (fr)
JP (1) JP2011507105A (fr)
KR (1) KR20100097670A (fr)
CN (1) CN101884020B (fr)
TW (1) TWI460990B (fr)
WO (1) WO2009076304A1 (fr)

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US9195252B1 (en) * 2013-03-14 2015-11-24 Maxim Integrated Products, Inc. Method and apparatus for current sensing and measurement
US20160109487A1 (en) * 2014-04-03 2016-04-21 Zhongxing Microelectronics Technology Co. Ltd Current sampling circuit and method
US20220066488A1 (en) * 2020-08-25 2022-03-03 STMiroelectronics (Rousset) SAS Device and method for electronic circuit power
US11768512B2 (en) 2019-12-12 2023-09-26 Stmicroelectronics (Rousset) Sas Method of smoothing a current consumed by an integrated circuit, and corresponding device
US11829178B2 (en) 2020-08-25 2023-11-28 Stmicroelectronics (Rousset) Sas Device and method for protecting confidential data in an electronic circuit powered by a power supply

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EP2656163A2 (fr) * 2010-12-23 2013-10-30 Marvell World Trade Ltd. Suivi précis de la polarisation pour la variation d'un processus et la modulation d'une alimentation
CN104242923B (zh) * 2013-06-13 2017-06-06 上海华虹宏力半导体制造有限公司 压控振荡器
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CN104779920B (zh) * 2015-05-08 2017-06-09 宜确半导体（苏州）有限公司 基于闭环功率控制的共源共栅射频功率放大器
JP6638340B2 (ja) * 2015-11-12 2020-01-29 セイコーエプソン株式会社 回路装置、発振器、電子機器及び移動体
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CN101884020B (zh) 2013-11-27
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KR20100097670A (ko) 2010-09-03

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