US8518733B2 - Method of manufacturing an electromechanical transducer - Google Patents

Method of manufacturing an electromechanical transducer Download PDF

Info

Publication number
US8518733B2
US8518733B2 US13/610,219 US201213610219A US8518733B2 US 8518733 B2 US8518733 B2 US 8518733B2 US 201213610219 A US201213610219 A US 201213610219A US 8518733 B2 US8518733 B2 US 8518733B2
Authority
US
United States
Prior art keywords
barrier wall
insulating layer
substrate
silicon substrate
height
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
US13/610,219
Other languages
English (en)
Other versions
US20130071964A1 (en
Inventor
Ayako Kato
Kazutoshi Torashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Assigned to CANON KABUSHIKI KAISHA reassignment CANON KABUSHIKI KAISHA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KATO, AYAKO, TORASHIMA, KAZUTOSHI
Publication of US20130071964A1 publication Critical patent/US20130071964A1/en
Application granted granted Critical
Publication of US8518733B2 publication Critical patent/US8518733B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/0075—For improving wear resistance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0221—Variable capacitors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0369—Static structures characterized by their profile
    • B81B2203/0392—Static structures characterized by their profile profiles not provided for in B81B2203/0376 - B81B2203/0384
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49005—Acoustic transducer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49007—Indicating transducer

Definitions

  • the present invention relates to a method of manufacturing an electromechanical transducer such as a capacitive transducer that is used as an ultrasound transducing device, and the like.
  • a driving principle of the embodiment will be described.
  • a direct-current voltage is applied to the monocrystal silicon vibration film 23 by a voltage applying unit that is not shown. Since the monocrystal silicon vibration film 23 deforms when the ultrasonic waves are received, a distance 22 between the vibration film 23 and the first silicon substrate 1 changes (see FIG. 1D ), and an electrostatic capacitance changes.
  • a current flows in the monocrystal silicon vibration film 23 due to the change in this electrostatic capacitance.
  • the current is converted into a voltage by a current-voltage converting device that is not shown, and the ultrasonic waves can be received thereby.
  • the direct current voltage and an alternating current voltage can be applied to the monocrystal silicon vibration film 23 , and the vibration film 23 can be vibrated by an electrostatic force. Due to this, the ultrasonic waves can be sent.
  • the height 7 of the second level of the barrier wall 3 is preferably set at or more than a height that would not allow the first protrusions 14 to reach the bonding interface when the second insulating layer 10 is formed at the desired thickness, which is a height by which no junction failure is generated with the second protrusions 15 .
  • the height 7 of the second level of the barrier wall 3 is preferably 12 nm or more and 110 nm or less.
  • the height 7 of the second level of the barrier wall 3 is preferably 27 nm or more and 110 nm or less.
  • the BOX layer 20 can be removed by oxidized film etching (dry etching, or wet etching such as by hydrofluoric acid). Since the wet etching such as by hydrofluoric acid can prevent silicon from being etched, such is more preferable due to being able to reduce a thickness variation of the monocrystal silicon vibration film 23 caused by etching. Since the active layer 21 of the SOI substrate has a small thickness variation, the thickness variation in the monocrystal silicon vibration film 23 can be reduced, a variation in a spring constant of the vibration film 23 can be reduced, and a property variation in the capacitive transducer can be reduced.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Medical Informatics (AREA)
  • Computer Hardware Design (AREA)
  • Biophysics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Radiology & Medical Imaging (AREA)
  • Biomedical Technology (AREA)
  • Heart & Thoracic Surgery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Molecular Biology (AREA)
  • Surgery (AREA)
  • Animal Behavior & Ethology (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Pressure Sensors (AREA)
US13/610,219 2011-09-20 2012-09-11 Method of manufacturing an electromechanical transducer Expired - Fee Related US8518733B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-204970 2011-09-20
JP2011204970A JP5896665B2 (ja) 2011-09-20 2011-09-20 電気機械変換装置の製造方法

Publications (2)

Publication Number Publication Date
US20130071964A1 US20130071964A1 (en) 2013-03-21
US8518733B2 true US8518733B2 (en) 2013-08-27

Family

ID=47022442

Family Applications (1)

Application Number Title Priority Date Filing Date
US13/610,219 Expired - Fee Related US8518733B2 (en) 2011-09-20 2012-09-11 Method of manufacturing an electromechanical transducer

Country Status (5)

Country Link
US (1) US8518733B2 (enExample)
EP (1) EP2572804A3 (enExample)
JP (1) JP5896665B2 (enExample)
KR (1) KR101473709B1 (enExample)
CN (1) CN103011054B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9752924B2 (en) 2013-10-22 2017-09-05 Canon Kabushiki Kaisha Capacitance type transducer and method of manufacturing the same

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5511260B2 (ja) * 2009-08-19 2014-06-04 キヤノン株式会社 容量型電気機械変換装置、及びその感度調整方法
JP5479390B2 (ja) * 2011-03-07 2014-04-23 信越半導体株式会社 シリコンウェーハの製造方法
EP3245156B1 (en) * 2015-01-16 2021-09-08 Université Gustave Eiffel Miniature kinetic energy harvester for generating electrical energy from mechanical vibrations
CN105036058B (zh) * 2015-05-27 2016-10-05 华南理工大学 集成化电容式微加工超声换能器及其制备方法
JP6606034B2 (ja) * 2016-08-24 2019-11-13 株式会社日立製作所 容量検出型超音波トランスデューサおよびそれを備えた超音波撮像装置
KR20220098075A (ko) 2021-01-02 2022-07-11 김동호 참여용 골인보드
CN114380271B (zh) * 2021-09-02 2025-07-01 苏州清听声学科技有限公司 一种定向发声屏绝缘凸点压印制作方法

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6958255B2 (en) 2002-08-08 2005-10-25 The Board Of Trustees Of The Leland Stanford Junior University Micromachined ultrasonic transducers and method of fabrication
US20070097791A1 (en) * 2005-10-28 2007-05-03 Industrial Technology Research Institute Capacitive ultrasonic transducer and method of fabricating the same
US20070164632A1 (en) 2004-03-06 2007-07-19 Olympus Corporation Capacitive ultrasonic transducer, production method thereof, and capacitive ultrasonic probe
US20090322181A1 (en) * 2008-06-19 2009-12-31 Hitachi, Ltd. Ultrasonic transducer and method of manufacturing the same
JP2010035156A (ja) 2008-06-24 2010-02-12 Canon Inc 機械電気変換素子及び機械電気変換装置の製造方法
US20120091543A1 (en) * 2010-10-15 2012-04-19 Canon Kabushiki Kaisha Electromechanical transducer and method of manufacturing the same
US20120256519A1 (en) * 2011-04-06 2012-10-11 Canon Kabushiki Kaisha Electromechanical transducer and method of producing the same
US20120266682A1 (en) 2011-04-19 2012-10-25 Canon Kabushiki Kaisha Electromechanical transducer and method of manufacturing the same
US20120306316A1 (en) * 2011-05-31 2012-12-06 Seiko Epson Corporation Ultrasonic transducer, biological sensor, and method for manufacturing an ultrasonic transducer
US20120319535A1 (en) * 2010-01-29 2012-12-20 Research Triangle Institute Methods for forming piezoelectric ultrasonic transducers, and associated apparatuses
US20130049527A1 (en) * 2011-08-30 2013-02-28 Canon Kabushiki Kaisha Electromechanical transducer and method for manufacturing the same
US20130049526A1 (en) * 2011-08-24 2013-02-28 Samsung Electronics Co., Ltd. Ultrasonic transducer and method of manufacturing the same
US20130066209A1 (en) * 2011-09-12 2013-03-14 Seiko Epson Corporation Ultrasonic probe and ultrasonic image diagnostic device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0462875A (ja) * 1990-06-25 1992-02-27 Seiko Instr Inc 半導体装置
DE69908129D1 (de) * 1998-07-07 2003-06-26 Goodyear Tire & Rubber Verfahren zur herstellung eines kapazitiven sensors
US7037746B1 (en) * 2004-12-27 2006-05-02 General Electric Company Capacitive micromachined ultrasound transducer fabricated with epitaxial silicon membrane
CN101238754A (zh) * 2005-10-18 2008-08-06 株式会社日立制作所 超声波换能器、超声波探头以及超声波摄像装置
US7745248B2 (en) * 2007-10-18 2010-06-29 The Board Of Trustees Of The Leland Stanford Junior University Fabrication of capacitive micromachined ultrasonic transducers by local oxidation
KR100977826B1 (ko) 2007-11-27 2010-08-27 한국전자통신연구원 멤스 마이크로폰 및 그 제조 방법
US8099854B2 (en) * 2008-06-24 2012-01-24 Canon Kabushiki Kaisha Manufacturing method of an electromechanical transducer
US20100173437A1 (en) * 2008-10-21 2010-07-08 Wygant Ira O Method of fabricating CMUTs that generate low-frequency and high-intensity ultrasound
KR101150186B1 (ko) 2009-12-04 2012-05-25 주식회사 비에스이 멤스 마이크로폰 및 그 제조방법
JP5550363B2 (ja) * 2010-01-26 2014-07-16 キヤノン株式会社 静電容量型電気機械変換装置

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6958255B2 (en) 2002-08-08 2005-10-25 The Board Of Trustees Of The Leland Stanford Junior University Micromachined ultrasonic transducers and method of fabrication
US20070164632A1 (en) 2004-03-06 2007-07-19 Olympus Corporation Capacitive ultrasonic transducer, production method thereof, and capacitive ultrasonic probe
US20080139946A1 (en) 2004-06-03 2008-06-12 Olympus Corporation Capacitive ultrasonic transducer, production method thereof, and capacitive ultrasonic probe
JP2009194934A (ja) 2004-06-03 2009-08-27 Olympus Corp 静電容量型超音波振動子および積層型静電容量型超音波振動子の製造方法
US20070097791A1 (en) * 2005-10-28 2007-05-03 Industrial Technology Research Institute Capacitive ultrasonic transducer and method of fabricating the same
US20090322181A1 (en) * 2008-06-19 2009-12-31 Hitachi, Ltd. Ultrasonic transducer and method of manufacturing the same
JP2010035156A (ja) 2008-06-24 2010-02-12 Canon Inc 機械電気変換素子及び機械電気変換装置の製造方法
US8087153B2 (en) 2008-06-24 2012-01-03 Canon Kabushiki Kaisha Manufacturing method of an electromechanical transducer
US20120319535A1 (en) * 2010-01-29 2012-12-20 Research Triangle Institute Methods for forming piezoelectric ultrasonic transducers, and associated apparatuses
US20120091543A1 (en) * 2010-10-15 2012-04-19 Canon Kabushiki Kaisha Electromechanical transducer and method of manufacturing the same
US20120256519A1 (en) * 2011-04-06 2012-10-11 Canon Kabushiki Kaisha Electromechanical transducer and method of producing the same
US20120266682A1 (en) 2011-04-19 2012-10-25 Canon Kabushiki Kaisha Electromechanical transducer and method of manufacturing the same
US20120306316A1 (en) * 2011-05-31 2012-12-06 Seiko Epson Corporation Ultrasonic transducer, biological sensor, and method for manufacturing an ultrasonic transducer
US20130049526A1 (en) * 2011-08-24 2013-02-28 Samsung Electronics Co., Ltd. Ultrasonic transducer and method of manufacturing the same
US20130049527A1 (en) * 2011-08-30 2013-02-28 Canon Kabushiki Kaisha Electromechanical transducer and method for manufacturing the same
US20130066209A1 (en) * 2011-09-12 2013-03-14 Seiko Epson Corporation Ultrasonic probe and ultrasonic image diagnostic device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
U.S. Appl. No. 13/592,416, filed Aug. 23, 2012.
Xuefeng Zhuang et al., "Integration of trench-isolated through-wafer interconnects with 2d capacitive micromachined ultrasonic transducer arrays," 138(1) Sensors and Actiators A 221-229 (Jul. 2007).

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9752924B2 (en) 2013-10-22 2017-09-05 Canon Kabushiki Kaisha Capacitance type transducer and method of manufacturing the same
US10119855B2 (en) 2013-10-22 2018-11-06 Canon Kabushiki Kaisha Capacitance type transducer

Also Published As

Publication number Publication date
JP2013070112A (ja) 2013-04-18
EP2572804A3 (en) 2017-12-27
JP5896665B2 (ja) 2016-03-30
CN103011054B (zh) 2015-10-14
CN103011054A (zh) 2013-04-03
KR101473709B1 (ko) 2014-12-17
KR20130031206A (ko) 2013-03-28
EP2572804A2 (en) 2013-03-27
US20130071964A1 (en) 2013-03-21

Similar Documents

Publication Publication Date Title
US20130071964A1 (en) Method of manufacturing an electromechanical transducer
JP5677016B2 (ja) 電気機械変換装置及びその作製方法
JP5812660B2 (ja) 電気機械変換装置及びその製造方法
JP5702966B2 (ja) 電気機械変換装置及びその作製方法
JP5408935B2 (ja) 電気機械変換素子及びその製造方法
EP2988883B1 (en) Capacitive micromachined ultrasonic transducer (cmut) with through-substrate via (tsv) substrate plug
US9520811B2 (en) Capacitive micromachined ultrasonic transducer (CMUT) device with through-substrate via (TSV)
US11750980B2 (en) MEMS device with enhanced membrane structure and method of forming the same
TWI690024B (zh) 半導體裝置及其製造方法
CN102728533A (zh) 机电变换器及其制作方法
CN111151431A (zh) 压电微机械超声换能器及其制造方法
TWI654781B (zh) 壓電式層裝置的製造方法以及相關的壓電式層裝置
US20130307375A1 (en) Mems device fabricated with integrated circuit
CN216512849U (zh) 压电微机电结构
US20130069480A1 (en) Electromechanical transducer and method of manufacturing the electromechanical transducer
JP5791294B2 (ja) 静電容量型電気機械変換装置
JP5812625B2 (ja) 静電容量型電気機械変換装置の製造方法
CN107710787B (zh) 超声波换能器及超声波检查装置
US9553055B2 (en) Method for fabricating semiconductor devices having reinforcing elements

Legal Events

Date Code Title Description
AS Assignment

Owner name: CANON KABUSHIKI KAISHA, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KATO, AYAKO;TORASHIMA, KAZUTOSHI;REEL/FRAME:029505/0714

Effective date: 20120910

STCF Information on status: patent grant

Free format text: PATENTED CASE

FPAY Fee payment

Year of fee payment: 4

FEPP Fee payment procedure

Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

LAPS Lapse for failure to pay maintenance fees

Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20210827