US8198731B2 - Protective layer for bond pads - Google Patents
Protective layer for bond pads Download PDFInfo
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- US8198731B2 US8198731B2 US12/390,012 US39001209A US8198731B2 US 8198731 B2 US8198731 B2 US 8198731B2 US 39001209 A US39001209 A US 39001209A US 8198731 B2 US8198731 B2 US 8198731B2
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- protective layer
- bond pad
- aluminum
- array
- aluminum bond
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- 239000011241 protective layer Substances 0.000 title claims abstract description 35
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 42
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims abstract description 38
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 16
- 238000012545 processing Methods 0.000 claims abstract description 11
- 230000007797 corrosion Effects 0.000 claims abstract description 10
- 238000005260 corrosion Methods 0.000 claims abstract description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 4
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 abstract description 10
- 229910001870 ammonium persulfate Inorganic materials 0.000 abstract description 5
- 239000000243 solution Substances 0.000 description 20
- 239000010410 layer Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 5
- DEVSOMFAQLZNKR-RJRFIUFISA-N (z)-3-[3-[3,5-bis(trifluoromethyl)phenyl]-1,2,4-triazol-1-yl]-n'-pyrazin-2-ylprop-2-enehydrazide Chemical compound FC(F)(F)C1=CC(C(F)(F)F)=CC(C2=NN(\C=C/C(=O)NNC=3N=CC=NC=3)C=N2)=C1 DEVSOMFAQLZNKR-RJRFIUFISA-N 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910018557 Si O Inorganic materials 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum-silicon-oxygen Chemical compound 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8536—Bonding interfaces of the semiconductor or solid state body
- H01L2224/85375—Bonding interfaces of the semiconductor or solid state body having an external coating, e.g. protective bond-through coating
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Definitions
- Disclosed embodiments relate generally to semiconductor circuits, and more particularly to a process for forming a protective layer on the surface of aluminum bond pads that protects the surface of the bond pads during subsequent processing.
- bond pads are used to make electrical contact between various components of the circuit or device.
- bond pads for imagers; however, the scope of the invention should not be limited as such and may be used for any type of integrated circuit device.
- Imagers including charge coupled devices (CCDs), photodiode arrays, charge injection devices (CIDs), hybrid focal plane arrays, and complementary metal oxide semiconductor (CMOS) imagers, have commonly been used in photo-imaging applications.
- Current applications of solid-state imagers include cameras, scanners, machine vision systems, vehicle navigation systems, star trackers, and motion detector systems, among others.
- a CMOS imager typically includes a focal plane array of pixel cells, each one of the cells including a photosensor, for example, a photogate, photoconductor or a photodiode for accumulating photo-generated charge.
- Each pixel cell has a charge storage region, which is connected to the gate of an output transistor that is part of a readout circuit.
- the charge storage region may be constructed as a floating diffusion region.
- each pixel cell may include at least one electronic device such as a transistor for transferring charge from the photosensor to the storage region and one device, also typically a transistor, for resetting the storage region to a predetermined charge level prior to charge transference.
- each pixel must be sensitive only to one color or spectral band.
- a color filter array (CFA) is typically placed in front of the optical path to the photosensors so that each photosensor detects the light of the color of its associated filter.
- the magnitude of the signal produced by each pixel is proportional to the amount of light impinging on the photosensor, it is also desirable to improve the photosensitivity of the imager by collecting light from a large light collecting area and focusing it onto a small photosensitive area of the photosensor. This can be done using a micro-lens array formed over the pixel array.
- FIGS. 1A and 1B illustrate an imager 10 including a color filter array 30 and micro-lens array 35 over a pixel array 25 .
- imaging portion 15 may be surrounded by peripheral circuitry 18 and bond pads 20 .
- the bond pads 20 are electrically connected to device circuitry of the imager 10 .
- Peripheral circuitry 18 controls the imaging portion 15 and converts electrical signals received from the imaging portion 15 into a digital image.
- the pixel array 25 , peripheral circuitry 18 and bond pads 20 are formed in semiconductor wafer 50 .
- Other conventional parts of the imager 10 are not shown or described herein.
- the process for forming the color filter array 30 and/or micro-lens array 35 over the pixel array 25 requires a multi-step fabrication process.
- a common method of forming these structures includes a tetramethylammonium hydroxide (TMAH)-based developing solution.
- TMAH-based developing solutions used for color filter array formation have a TMAH concentration ranging from about 0.6% to about 2.6%.
- the entire CFA/microlens formation process typically involves about six developing steps where this developing solution comes into contact with the bond pad for approximately 30 seconds to 1 minute per each step.
- the TMAH contained in this developing solution is very aggressive on the aluminum from which the bond pads 20 are typically formed. As can be seen in FIG.
- An organic protective layer or an oxide layer can be formed over the bond pads 20 before the CFA/micro-lens formation process to protect the bond pads 20 from the TMAH solution.
- these layers must be removed after the CFA/micro-lens formation process in order to avoid problems (e.g., bonding issues during packaging of the imager) during later processing steps.
- the oxide layer for example, must be removed using an expensive hard-coat process.
- FIG. 1A is a schematic version of a top view of a conventional imager.
- FIG. 1B is a schematic cross-sectional side view of the imager of FIG. 1A .
- FIG. 2 illustrates the effect of a TMAH-based developing solution on an unprotected aluminum bond pad.
- FIG. 3 illustrates a process for forming a protective Al—Si—O layer on bond pads, in accordance with disclosed embodiments.
- FIG. 4 illustrates experimental results of the silicon depth profile of eight bond pads processed with the disclosed process.
- FIG. 5 illustrates experimental results of the oxygen depth profile of eight bond pads processed with the disclosed process.
- FIG. 6 illustrates experimental results of the aluminum depth profile of eight bond pads processed with the disclosed process.
- FIG. 7 illustrates the effect of a TMAH-based developing solution on a protected aluminum bond pad, in accordance with disclosed embodiments.
- FIG. 8 illustrates an element composition depth profile of an aluminum bond pad processed in accordance with the disclosed process and through a color filter array process.
- Disclosed embodiments relate to a process performed on an imager before formation of the color filter array and/or micro-lens array, though, as noted, the process can be used with bond pads of other semiconductor devices and circuits.
- the disclosed process is able to effectively protect the aluminum bond pads from unwanted damage typically caused by a TMAH-based developing process used in the CFA/micro-lens formation process.
- a wet process is performed that creates a very thin layer of an aluminum-silicon-oxygen (Al x Si x O x ) compound on the surface of the bond pad.
- Al x Si x O x aluminum-silicon-oxygen
- FIG. 3 illustrates the wet process by which the Al—Si—O compound is formed on the surface of a bond pad 20 a.
- the bond pad 20 a is exposed in a wet process to a solution 65 comprising deionized water, silicon (Si), ammonium persulfate (AP) and TMAH (TMA + and OH ⁇ ) and having a pH of 12+/ ⁇ 0.1.
- silicon and oxygen are incorporated into the surface of the aluminum bond pad 20 a, thereby forming a thin layer of an Al x Si x O x compound 70 and resulting in a protected bond pad 20 b.
- the solution 65 comprises between about 3.0% and about 3.4% silicon, between about 2.2% and about 2.8% ammonium persulfate and between about 6.5% and about 8.5% TMA + ions.
- the bond pad 20 a is exposed to the solution 65 , followed by a DI water rinse and a Marangoni rinse, which dries the wafer.
- the solution has an ionic interaction with the aluminum on the surface of the bond pad. Some aluminum atoms are brought into the solution and substituted with the silicon atoms, thereby forming a more resistant bond on the surface of the bond pad. This interaction stops when the surface has been uniformly implanted with the maximum amount silicon with respect to the temperature and pH at which it is being processed.
- the process solution 65 comprises deionized water containing about 3.2% silicon, about 2.5% ammonium persulfate and about 7.5% TMA + and has a pH of 12+/ ⁇ 0.1.
- the bond pad 20 a is exposed to the solution 65 for about 6 minutes, maintaining the temperature at about 90° C., followed by a DI water rinse at about 40° C. and a Marangoni rinse, which dries the wafer. It may also be possible to expose the bond pad to the process solution 65 at temperatures as low as about 60° C. The variation in temperature results in a variation in concentration of silicon in the protective layer.
- the thin layer of Al—Si—O compound 70 may have a thickness of up to about 3.5 nm. Preferably the thickness is about 2 nm. This thickness is sufficient to protect the bond pad 20 b from attack by TMAH solution used in subsequent processing, such as during formation of a CFA and/or micro-lens array, but thin enough to allow uninhibited wire bonding at later processing steps (without needing to remove the protective layer).
- the Al x Si x O x compound 70 formed at an upper portion of the bond pad 20 b contains between about 4% and about 18% silicon, between about 40% and about 60% oxygen and between about 5% and about 30% aluminum.
- the balance of the compound is small amounts of other elements, such as carbon, nitrogen, fluorine and sulfur present in the bond pad 20 a before processing.
- the Al x Si x O x compound 70 formed at an upper portion of the bond pad 20 b contains about 15% silicon, about 50% oxygen and about 20% aluminum.
- FIG. 4 illustrates experimental results of the silicon depth profile of eight bond pads processed with the disclosed process.
- FIG. 5 illustrates experimental results of the oxygen depth profile of eight bond pads processed with the disclosed process.
- FIG. 6 illustrates experimental results of the aluminum depth profile of eight bond pads processed with the disclosed process.
- FIGS. 4-6 illustrate the concentration of silicon, oxygen and aluminum, respectively, at increasing depths below the surface of the bond pad. These charts show the extent of incorporation of silicon and oxygen into the surface of the aluminum bond pads by using the claimed process. These depth profiles were created based on an X-ray Photoelectron Spectroscopy (XPS) analysis of the bondpad surfaces.
- XPS X-ray Photoelectron Spectroscopy
- the wafers can be subjected to subsequent processing, such as CFA/micro-lens formation using a standard, known process, without corrosion or pitting occurring on the bond pads. Additionally, the protective layer does not need to be removed prior to the subsequent processing. As can be seen in FIG. 7 , when the protected aluminum bond pad 20 b is exposed to a TMAH-based developing solution 55 , aluminum is not removed from the surface of the pad 20 b. Therefore, the problems associated with the pitting seen in FIG. 2 are avoided.
- FIG. 8 illustrates a typical element composition depth profile of an aluminum bond pad processed with the wet solution in accordance with disclosed embodiments and then through a color filter array formation process. Again, these depth profiles were created based on an XPS analysis of the bondpad surfaces.
- FIG. 8 demonstrates that the protective layer (circled region on FIG. 8 ) is able to resist the rework process performed in the CFA process to allow reprocessing of the wafers. This means that this layer can easily stand multiple CFA/micro-lens processes without the necessity to reapply it.
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/471,151 US8372763B2 (en) | 2008-11-13 | 2012-05-14 | Process for wet passivation of bond pads for protection against subsequent TMAH-based processing |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT000610A ITRM20080610A1 (it) | 2008-11-13 | 2008-11-13 | Procedimento per passivazione in umido di piazzole di unione per protezione contro un trattamento successivo basato su tmah. |
ITRM2008A000610 | 2008-11-13 | ||
ITRM2008A0610 | 2008-11-13 |
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Cited By (2)
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US20120080767A1 (en) * | 2010-10-04 | 2012-04-05 | Sony Corporation | Solid-state imaging device, method for manufacturing the same, and electronic apparatus |
US20160190022A1 (en) * | 2014-12-25 | 2016-06-30 | Renesas Electronics Corporation | Manufacturing method of semiconductor device |
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Publication number | Priority date | Publication date | Assignee | Title |
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US8999850B2 (en) * | 2011-12-29 | 2015-04-07 | Stmicroelectronics Pte Ltd | Methods and apparatus for TMAH etching |
JP2018046242A (ja) * | 2016-09-16 | 2018-03-22 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
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US20120080767A1 (en) * | 2010-10-04 | 2012-04-05 | Sony Corporation | Solid-state imaging device, method for manufacturing the same, and electronic apparatus |
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Also Published As
Publication number | Publication date |
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ITRM20080610A1 (it) | 2010-05-14 |
US8372763B2 (en) | 2013-02-12 |
US20100117240A1 (en) | 2010-05-13 |
US20120225567A1 (en) | 2012-09-06 |
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