US7157991B2 - Surface acoustic wave device having reflectors with both open and shorted electrodes - Google Patents

Surface acoustic wave device having reflectors with both open and shorted electrodes Download PDF

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Publication number
US7157991B2
US7157991B2 US10/746,255 US74625503A US7157991B2 US 7157991 B2 US7157991 B2 US 7157991B2 US 74625503 A US74625503 A US 74625503A US 7157991 B2 US7157991 B2 US 7157991B2
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Prior art keywords
surface acoustic
open
acoustic wave
wave device
electrode
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US20050003790A1 (en
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Osamu Kawachi
Takuya Abe
Yasufumi Kaneda
Motoyuki Tajima
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Taiyo Yuden Co Ltd
Taiyo Yuden Mobile Technology Co Ltd
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Fujitsu Media Devices Ltd
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Assigned to TAIYO YUDEN CO., LTD. reassignment TAIYO YUDEN CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TAIYO YUDEN MOBILE TECHNOLOGY CO., LTD.
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02637—Details concerning reflective or coupling arrays
    • H03H9/02685—Grating lines having particular arrangements
    • H03H9/02771—Reflector banks

Definitions

  • the present invention relates to a surface acoustic wave device, and more particularly to a surface acoustic wave device which can implement the attenuation characteristic outside the pass band and the narrow band characteristics, and is preferable for use as a filter.
  • radio devices including portable telephones, cordless telephones and radio sets
  • filter elements are used as critical key devices.
  • a critical issue is decreasing the insertion loss and increasing the attenuation amount outside the pass band in order to allow necessary signals to pass and to remove unnecessary signals. Also as the number of components decreases for downsizing the radio device main body, characteristics demanded for the surface acoustic wave device are becoming critical.
  • the surface acoustic wave device in the configuration example in FIG. 1 includes an interdigital transducer (IDT) 1 and reflectors 2 and 3 , which are formed by electrode finger patterns provided on the piezoelectric substrate 100 .
  • IDT interdigital transducer
  • the interdigital transducer (IDT) 1 includes three individual IDTs (these are hereafter called drive electrodes 1 - 1 , 1 - 2 1 - 3 ), and the drive electrodes 1 - 1 and 1 - 2 are connected in parallel to the input terminal IN.
  • the drive electrode 1 - 3 is connected to the output terminal OUT.
  • the drive electrodes 1 - 1 , 1 - 2 and 1 - 3 and the input terminal IN, and the output terminal OUT are connected respectively by lead wires which are connected to the electrode pad 4 .
  • the reflectors 2 and 3 which are disposed on both sides of the interdigital transducer 1 , constitute a conventional grating electrode.
  • one possible method for implementing a narrower band is increasing the number of electrode fingers of the interdigital transducer 1 . This however increases insertion loss.
  • Another method of implementing a narrower band is decreasing stop band width by decreasing the reflection coefficient of the reflection electrodes 2 and 3 , but this also has a tendency to increase insertion loss accordingly.
  • the present inventor continued research and development on the configuration of the surface acoustic wave device which implements a narrower band without increasing insertion loss, and discovered that attenuation outside the pass band can be increased without increasing insertion loss, and fine filter characteristics in a narrow band can be implemented by forming the reflection electrode 2 and the reflection electrode 3 as blocks with different reflection coefficients.
  • an object of the present invention is to provide a surface acoustic wave device which can decrease insertion loss in the pass band and present good narrow band characteristics.
  • the first aspect of the surface acoustic wave device for achieving the above object of the present invention includes a piezoelectric substrate, an interdigital transducer which is formed on the piezoelectric substrate and includes at least one drive electrode for driving surface acoustic waves, and reflectors which are disposed on both sides of the interdigital transducer, characterized in that the reflectors further include an open electrode block with a plurality of electrically independent electrode fingers, and a short electrode block with a plurality of electrode fingers of which both ends are electrically shorted.
  • the second aspect of the surface acoustic wave device for achieving the above object of the present invention is the surface acoustic wave device according to the first aspect, characterized in that the plurality of electrode fingers of the open electrode block of the reflectors are disposed at the first to eleventh position from the edge of the reflectors.
  • the third aspect of the surface acoustic wave device for achieving the above object of the present invention is the surface acoustic wave device according to the second aspect, characterized in that the number of the plurality of electrode fingers of the open electrode block of the reflectors is eight or less.
  • the fourth aspect of the surface acoustic wave device for achieving the above object of the present invention is the surface acoustic wave device according to the first aspect, characterized in that the open electrode block and the short electrode block of the reflectors are disposed symmetrically, and each one of the two open electrode blocks is disposed at the first to eleventh position from both edges of the reflector.
  • the fifth aspect of the surface acoustic wave device for achieving the above object of the present invention is the surface acoustic wave device according to the fourth aspect, characterized in that the number of the plurality of electrode fingers of the open electrode block of the reflectors is eight or less.
  • the sixth aspect of the surface acoustic wave device for achieving the above object of the present invention is the surface acoustic wave device according to one of the first to fifth aspects, characterized in that the plurality of electrode fingers of the open electrode block and the plurality of electrode fingers of the short electrode block are disposed with an interval of a half wavelength of the surface acoustic waves to be driven.
  • the seventh aspect of the surface acoustic wave device for achieving the above object of the present invention is characterized in that the number of the plurality of electrode fingers of the short electrode blocks in the first and second reflectors are different from each other.
  • FIG. 1 is a diagram depicting a configuration example of the surface acoustic wave device
  • FIG. 2 is a diagram depicting an embodiment of the present invention
  • FIG. 3 are diagrams depicting an embodiment when the reflector is constructed with 200 electrode fingers
  • FIG. 4 is a diagram depicting the change of the passing characteristic in the configuration of the embodiment in FIG. 2 when the position of the open electrode is changed inward with the left end of the reflector as a reference;
  • FIG. 5 is a graph indicating the change of attenuation and shape factor of the filter which are measured with changing the position of the open electrode;
  • FIG. 6 is a graph indicating the frequency characteristic of the filter when the number of open electrodes is changed.
  • FIG. 7 is a graph indicating the simulation result of the change of attenuation and shape factor of the filter when the number of open electrodes is changed;
  • FIG. 8 is a diagram depicting the arrangement of the open electrode fingers in the reflectors.
  • FIG. 9 is a passing characteristic diagram comparing the case when the open electrode fingers are disposed symmetrically and the case when disposed asymmetrically.
  • FIG. 2 is an embodiment of the present invention, and just like the configuration shown in FIG. 1 , electrode fingers, of which the main component is Al, are formed on the LiTa 0 3 or LiNb 0 3 piezoelectric substrate 100 , and the interdigital transducer (IDT) 1 , which has three drive electrodes 1 - 1 , 1 - 2 and 1 - 3 , is cascade-connected between the two reflectors 2 and 3 .
  • IDT interdigital transducer
  • the difference from the configuration in FIG. 1 is that the reflectors 2 and 3 are comprised of a plurality of blocks having different reflection coefficients.
  • each one of the reflectors 2 and 3 has three blocks with different reflection coefficients, and the blocks with different reflection coefficients are divided into a short electrode block where the electrode fingers are shorted by the electrode pad 4 , and an open electrode block where the electrode fingers are not connected to the electrode pad 4 .
  • both ends of the plurality of electrode fingers are connected to the electrode pad 4 to be shorted, and the open electrode block is formed with independent electrode fingers separated from the electrode pad 4 .
  • the reflector 2 is comprised of two open electrode blocks, which have open electrodes 2 - 1 and 2 - 2 respectively, and three short electrode blocks having short electrodes, which are adjacent to the open electrode blocks.
  • the reflector 3 is includes two open blocks having open electrodes 3 - 1 and 3 - 2 respectively, and three short electrode blocks having short electrodes, which are adjacent to the open electrode blocks.
  • the surface acoustic wave device including the reflectors which have such open electrode blocks and short electrode blocks is characterized by the number of open electrode fingers constituting the open electrode block of the reflectors and the positions thereof, concerning attenuation outside the pass band and the narrow band characteristics.
  • FIG. 3 shows an example when the reflector is comprised of 200 electrode fingers.
  • FIG. 3A is a configuration of a reflector of prior art, where both ends of all the 200 electrode fingers included in the reflector are commonly shorted by the electrode pads 40 and 41 , and is comprised of only one short electrode block. In this case, the reflector has only a single reflection coefficient.
  • this reflector is expressed as (200-0-0-0-0) with the left end of the reflector as a reference.
  • the reflector shown in FIG. 3A shows that the electrode finger at the left end is a short electrode, and the rest of the electrode fingers are also short electrodes, therefore all 200 (100 pairs) electrode fingers are short electrodes.
  • the two electrode fingers are open electrodes, the next 196 electrode fingers are short electrodes, and two electrode fingers at the right end are open electrodes when the left end of the reflector is the reference.
  • This configuration is expressed as (0-2-196-2-0).
  • the four electrode fingers are short electrodes, the next two electrode fingers are open electrodes, and the next 188 electrode fingers are short electrodes when the left end of the reflector is the reference. Then the next two electrode fingers are open electrodes and the next four electrode fingers are short electrodes.
  • This configuration is expressed as (4-2-188-2-4).
  • FIG. 4 shows the change of the passing characteristic in the surface acoustic wave device when the two reflectors 2 and 3 are comprised of 156 and 200 electrode fingers respectively, and the position of the pair (two electrode fingers) of open electrodes is changed inward with the left end of the reflectors as the reference.
  • FIG. 4A shows passing characteristics as a whole
  • FIG. 4B is a diagram when a part of FIG. 4A is enlarged to clarify the difference in each characteristic.
  • the surface acoustic wave device ‘b’ which has the reflector 3 defined by (0-2-196-2-0) or the reflector 2 defined by (0-2-152-2-0), has a configuration where two open electrodes are disposed on both end sides of the reflector respectively in FIG. 4 .
  • the surface acoustic wave device ‘c’ which has the reflector 3 defined by (2-2-192-2-2) or the reflected 2 defined by (2-2-148-2-2), has a configuration where two short electrodes are disposed on both end sides of the reflector and two open electrodes are positioned inside thereof.
  • the surface acoustic wave device ‘d’ which has the reflector 3 defined by (4-2-188-2-4) or the reflector 2 defined by (4-2-144-2-4), has four short electrodes at both end sides of the reflector and two open electrodes are positioned inside thereof.
  • the surface acoustic device ‘e’ which has the reflector 3 defined by (6-2-184-2-6) or the reflector 2 defined by (6-2-140-2-6), has six short electrodes at both end sides of the reflector and two open electrodes are positioned inside thereof.
  • the surface acoustic wave device ‘f’ which has the reflector 3 defined by (8-2-180-2-8) or the reflector 2 defined by (8-2-136-2-8), has a configuration where eight short electrodes are disposed on both end sides of the reflector and two open electrodes are positioned inside thereof.
  • the surface acoustic wave device ‘g’ which has the reflector 3 defined by (10-2-176-2-10) or the reflector 2 defined by (10-2-132-2-10), has a configuration where ten short electrodes are disposed on both end sides of the reflector and two open electrodes are positioned inside thereof.
  • the passing characteristic changes by positioning the open electrodes inside of both the ends with respect to the characteristic of the surface acoustic wave device ‘a’ when all electrode fingers are short electrodes.
  • the attenuation and shape factor outside the pass band changes.
  • the shape factor with respect to the characteristic of the surface acoustic wave device ‘a’ when all electrode fingers are short electrodes is 0.537.
  • FIG. 5 is a graph comparing the attenuation and shape factor outside the pass band in the surface acoustic wave devices ‘b’ to ‘g’, which have reflectors where the open electrodes are at different positions respectively, with respect to the characteristics of the surface wave device ‘a’where all electrode fingers are short electrodes.
  • FIG. 5 shows the case when there is one open electrode position corresponding to the reflector ‘b’, and is the configuration shown in FIG. 3B where the first and second electrode fingers at both end sides of the reflector are open electrodes.
  • the case when there are three open electrode positions is the configuration of the reflector where the first and second electrode fingers from both end sides of the reflector are short electrodes, and the third and fourth electrode fingers are open electrodes. This corresponds to the configuration of the reflector of the surface acoustic wave device ‘c’ shown in FIG. 4 .
  • the case when there are five open electrode positions is the configuration where the first to fourth electrode fingers from both end sides of the reflector are short electrodes, and the fifth and sixth electrode fingers are open electrodes. This corresponds to the configuration of the reflector of the surface acoustic wave device ‘d’ shown in FIG. 4 .
  • the case when there are seven open electrode positions is the configuration of the reflector where the first to sixth electrode fingers from both end sides of the reflector are short electrodes, and the seventh and eighth electrode fingers are open electrodes. This corresponds to the configuration of the reflector of the surface acoustic wave device ‘e’ shown in FIG. 4 .
  • the case when there are nine open electrode positions is the configuration of the reflector where the first to eighth electrode fingers from both end sides of the reflector are short electrodes, and the ninth and tenth electrode fingers are open electrodes. This corresponds to the configuration of the reflector of the surface acoustic wave device ‘f’ shown in FIG. 4 .
  • both the attenuation characteristic II and the shape factor characteristic I outside the passing band can be improved compared with the characteristics of the surface acoustic wave device ‘a’ which has a reflector with all short electrodes.
  • the shape factor and the attenuation outside the pass band can be improved by increasing the number of pairs of the open electrodes compared with the case of having a reflector where all open electrodes.
  • FIG. 6 is a diagram depicting the pass band characteristic of the surface acoustic wave device when the open electrodes are disposed from the fifth electrode finger from both end sides of the reflector, that is, four short electrodes are disposed on both end sides, and open electrodes are disposed inside thereof, and when the number of the open electrodes of the reflector is changed from one to seven.
  • the surface acoustic wave device ‘h’ has a configuration where one open electrode is disposed inside the four short electrodes at both ends of the reflector.
  • the surface acoustic wave device ‘i’ has a configuration where two open electrodes are disposed inside the four short electrodes at both ends of the reflector. This configuration corresponds to the configuration of the reflector of the surface acoustic wave device d in FIG. 4 and FIG. 5 .
  • the surface acoustic wave device ‘j’ has a configuration where four open electrodes are disposed inside the four short electrodes at both ends of the reflector.
  • the surface acoustic wave device ‘k’ has a configuration where six open electrodes are disposed inside the four short electrodes at both ends of the reflector.
  • the surface acoustic wave device ‘ 1 ’ has a configuration where seven open electrodes are disposed inside the four short electrodes at both ends of the reflector.
  • FIG. 6 shows, in the case of increasing the number of open electrodes as well, the passing characteristic is changed by increasing the number of open electrodes with compared with the characteristics of the surface acoustic wave device ‘a’ which has a reflector with all short electrodes.
  • FIG. 7 is a graph indicating the simulation results of the changes of the attenuation and the shape factor outside the pass band in the surface acoustic wave devices ‘h’ to ‘L’, which have reflectors where the number of open electrodes is increased respectively, compared with the characteristics of the surface acoustic wave device ‘a’, which has a reflector with all short electrodes.
  • the shape factor in the surface acoustic wave device which has a reflector with all short electrodes is 0.54, and compared with this, the shape factor improves by increasing the number of open electrodes.
  • the attenuation outside the band decreases if the number of open electrodes is increased, but when the number of open electrodes is four to eight, the shape factor in the surface acoustic wave device which has a reflector with all short electrodes is improved more than 0.54, and attenuation can be 25 dB or more.
  • FIG. 8 is a diagram depicting the arrangement of the open electrode fingers in reflectors, where FIG. 8A is the case when the open electrode fingers in the reflector are arranged symmetrically, and corresponds to the reflector of the surface acoustic wave device ‘d’ in the example in FIG. 4 (or the reflector of the surface acoustic wave device ‘i’ in the example in FIG. 6 ).
  • the configuration of the reflector shown in FIG. 8A is that four short electrode fingers are disposed at both ends, and two open electrode fingers are disposed inside thereof, and the arrangement is symmetrical.
  • the configuration of the reflector shown in FIG. 8B is that four short electrode fingers are disposed at the left end, and two open electrode fingers are disposed inside thereof. And short electrode fingers are disposed from inside the two open electrode fingers up to the right end, and the arrangement of the electrode fingers is asymmetrical.
  • FIG. 9 is a graph comparing the pass band characteristic of the surface acoustic wave device when the open electrode fingers are disposed symmetrically and when they are disposed asymmetrically.
  • the reflector of the surface acoustic wave device ‘m’ has a configuration where four short electrode fingers are disposed from both ends, and two open electrode fingers are disposed inside thereof, which is the configuration shown in FIG. 8A .
  • the reflector of the surface acoustic wave device ‘n’ has an asymmetrical configuration where four short electrode fingers are disposed at the left end, two open electrode fingers are disposed inside thereof, and short electrode fingers are disposed from inside the two open electrode fingers up to the right end.
  • the reflector of the surface acoustic wave device ‘o’ has a configuration where four short electrode fingers are disposed from both ends, and seven open electrode fingers are disposed inside thereof.
  • the reflector of the surface acoustic wave device ‘p’ has an asymmetrical configuration where four short electrode fingers are disposed at the left end, seven open electrode fingers are disposed inside thereof, and short electrode fingers are disposed from inside the seven open electrode fingers up to the right end.
  • the surface acoustic wave device where the open electrode fingers of the reflector are disposed symmetrically has a larger attenuation outside the pass band in both cases.
  • the attenuation outside the band is improved, and a narrower band can be implemented compared with the case when the electrode fingers of the reflector are all short electrodes. Therefore the application of the present invention is not limited to the case when open electrode fingers are disposed symmetrically in the reflector of the surface acoustic wave device.
  • the present invention can provide a surface acoustic wave device, which has a large attenuation outside the pass band, and can decrease the insertion loss in the pass band, and can implement good narrow band characteristics.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
US10/746,255 2001-07-03 2003-12-29 Surface acoustic wave device having reflectors with both open and shorted electrodes Active 2025-03-28 US7157991B2 (en)

Applications Claiming Priority (3)

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JP2001202654A JP3923283B2 (ja) 2001-07-03 2001-07-03 弾性表面波デバイス
JP2001-202654 2001-07-03
PCT/JP2001/011439 WO2003005580A1 (fr) 2001-07-03 2001-12-26 Dispositif d'onde acoustique de surface

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PCT/JP2001/011439 Continuation WO2003005580A1 (fr) 2001-07-03 2001-12-26 Dispositif d'onde acoustique de surface

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US (1) US7157991B2 (fr)
EP (1) EP1420514B1 (fr)
JP (1) JP3923283B2 (fr)
KR (1) KR100850623B1 (fr)
CN (1) CN1323488C (fr)
DE (1) DE60133228T2 (fr)
TW (1) TW518821B (fr)
WO (1) WO2003005580A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090028001A1 (en) * 2007-07-26 2009-01-29 Delaware Capital Formation, Inc. Reflective and slanted array channelized sensor arrays

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1303041B1 (fr) 2001-10-16 2009-03-18 Panasonic Corporation Transducteur interdigital, filtre à ondes acoustiques de surface, et appareil de radiocommunication
CN101231711B (zh) * 2008-01-08 2010-06-09 长安大学 声表面波型小波神经网络器件
FR3091429B1 (fr) 2018-12-28 2022-02-18 Thales Sa Dispositif à onde acoustique de surface amélioré

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3952269A (en) 1975-04-28 1976-04-20 Hughes Aircraft Company Surface acoustic wave delay line
JPS52105752A (en) 1976-03-01 1977-09-05 Nec Corp Surface elastic wave vibrator
US4340834A (en) 1979-08-31 1982-07-20 Tokyo Shibaura Denki Kabushiki Kaisha Surface acoustic wave resonator device
JPS61281611A (ja) 1985-06-07 1986-12-12 Hitachi Ltd 弾性表面波共振子
JPS62281611A (ja) 1986-05-30 1987-12-07 Nec Home Electronics Ltd 信号エツジ検出装置
US4801836A (en) * 1987-08-24 1989-01-31 The United States Of America As Represented By The Secretary Of The Army SAW dispersive delay device
JPS6423131U (fr) 1987-08-03 1989-02-07
DE3933006A1 (de) 1988-10-03 1990-04-05 Hitachi Ltd Akustische oberflaechenwellenvorrichtung und verfahren zu deren herstellung und anpassung
US5175711A (en) * 1988-10-03 1992-12-29 Hitachi, Ltd. Surface acoustic wave apparatus and method of productivity and adjustment of the same
US5621364A (en) * 1992-04-27 1997-04-15 Siemens Aktiengesellschaft Weighted reflector for surface acoustic waves
JP2000013181A (ja) * 1998-06-18 2000-01-14 Toyo Commun Equip Co Ltd Ｓａｗデバイス

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3952269A (en) 1975-04-28 1976-04-20 Hughes Aircraft Company Surface acoustic wave delay line
JPS52105752A (en) 1976-03-01 1977-09-05 Nec Corp Surface elastic wave vibrator
US4340834A (en) 1979-08-31 1982-07-20 Tokyo Shibaura Denki Kabushiki Kaisha Surface acoustic wave resonator device
JPS61281611A (ja) 1985-06-07 1986-12-12 Hitachi Ltd 弾性表面波共振子
JPS62281611A (ja) 1986-05-30 1987-12-07 Nec Home Electronics Ltd 信号エツジ検出装置
JPS6423131U (fr) 1987-08-03 1989-02-07
US4801836A (en) * 1987-08-24 1989-01-31 The United States Of America As Represented By The Secretary Of The Army SAW dispersive delay device
DE3933006A1 (de) 1988-10-03 1990-04-05 Hitachi Ltd Akustische oberflaechenwellenvorrichtung und verfahren zu deren herstellung und anpassung
US5175711A (en) * 1988-10-03 1992-12-29 Hitachi, Ltd. Surface acoustic wave apparatus and method of productivity and adjustment of the same
US5621364A (en) * 1992-04-27 1997-04-15 Siemens Aktiengesellschaft Weighted reflector for surface acoustic waves
JP2000013181A (ja) * 1998-06-18 2000-01-14 Toyo Commun Equip Co Ltd Ｓａｗデバイス

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090028001A1 (en) * 2007-07-26 2009-01-29 Delaware Capital Formation, Inc. Reflective and slanted array channelized sensor arrays
US7633206B2 (en) * 2007-07-26 2009-12-15 Delaware Capital Formation, Inc. Reflective and slanted array channelized sensor arrays

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CN1524343A (zh) 2004-08-25
JP2003017970A (ja) 2003-01-17
TW518821B (en) 2003-01-21
WO2003005580A1 (fr) 2003-01-16
US20050003790A1 (en) 2005-01-06
JP3923283B2 (ja) 2007-05-30
DE60133228D1 (de) 2008-04-24
EP1420514A1 (fr) 2004-05-19
KR100850623B1 (ko) 2008-08-05
DE60133228T2 (de) 2009-03-26
CN1323488C (zh) 2007-06-27
KR20040013086A (ko) 2004-02-11
EP1420514A4 (fr) 2005-04-13
EP1420514B1 (fr) 2008-03-12

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