US7012751B2 - Semitransparent mirror and methods for producing and operating such a mirror - Google Patents

Semitransparent mirror and methods for producing and operating such a mirror Download PDF

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Publication number
US7012751B2
US7012751B2 US10/831,134 US83113404A US7012751B2 US 7012751 B2 US7012751 B2 US 7012751B2 US 83113404 A US83113404 A US 83113404A US 7012751 B2 US7012751 B2 US 7012751B2
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Prior art keywords
phase change
change medium
semitransparent mirror
reflectivity
protective layer
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US10/831,134
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US20040223243A1 (en
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Horst Theuss
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Infineon Technologies AG
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Infineon Technologies AG
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/1073—Beam splitting or combining systems characterized by manufacturing or alignment methods
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/45—Interferometric spectrometry
    • G01J3/453—Interferometric spectrometry by correlation of the amplitudes
    • G02B1/105—
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/14—Protective coatings, e.g. hard coatings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/14—Beam splitting or combining systems operating by reflection only
    • G02B27/142—Coating structures, e.g. thin films multilayers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/14—Beam splitting or combining systems operating by reflection only
    • G02B27/144—Beam splitting or combining systems operating by reflection only using partially transparent surfaces without spectral selectivity

Definitions

  • the invention relates to a semitransparent mirror and optical units with such a mirror, and to methods for producing and operating such a mirror.
  • a transparent substrate is coated with thin layers for a semitransparent mirror.
  • a predetermined ratio of reflectivity and transparency of the semitransparent mirror is set with the aid of the thickness of the layers.
  • the disadvantage of such semitransparent mirrors is that this ratio of reflectivity and transparency can be changed only by depositing additional layers on the substrate, or by removing layer thicknesses by etching. Both of these require a high outlay on systems, material and method time. Corrections to the ratio of reflectivity and transparency of a semitransparent mirror also assume that the semitransparent mirror is removed from an optical unit and fed to the vapor deposition or etching installation, and is subsequently expensively reinstalled in the unit.
  • the semitransparent mirror according to the invention has a transparent substrate.
  • a first protective layer is arranged on this substrate, and a layer that has a phase change medium is applied to this first protective layer.
  • a second protective layer covers the phase change medium and protects it against environmental influences.
  • Such a semitransparent mirror has the advantage that the phase change effect of the phase change medium is used to change the ratio of reflectivity and transparency.
  • the optical behavior of the layer composed of the phase change medium can be changed and adapted by irradiation of pulsed laser light.
  • a further advantage of this semitransparent mirror is that it can remain in its optical unit for the purpose of adapting and changing the ratio of reflectivity and transparency, and that, if need be, the ratio of reflectivity and transparency can be set using the same laser light source that is already present in the optical unit.
  • a further advantage of such a semitransparent mirror with a layer composed of a phase change medium is that a mirror which can be modified in such a way can also be switched on and off, for example from virtually 90% transmission to virtually 10% transmission. Moreover, the setting of the ratio of reflectivity and transparency can be set virtually continuously from virtually 90% reflectivity to virtually 90% transmission. Finally, it is possible to achieve subsequent fine settings of the intensities of different optical paths in optoelectronic components, as well as trimming and adjusting of optical housings without the need to provide mechanical actuators.
  • Optical assemblies with beam splitters are generally preferred applications of the semitransparent mirror.
  • the semitransparent mirror according to the invention can advantageously be used in optical measurement technology and sensor systems. A wide field of application is found in holography and/or interferometry, for example in a Fourier interferometer. The subsequent trimming of optical assemblies can be carried out without a problem using the semitransparent mirror of the invention.
  • the semitransparent mirror permits light to be branched off temporarily from an optical path, for example for test purposes.
  • the phase change medium is a semiconductor material that has an amorphous and/or crystalline structure as a function of a thermal treatment.
  • the phase change effect between amorphous and crystalline structures is particularly prominent in semiconductor materials.
  • IV—IV semiconductors such as silicon or germanium.
  • binary III–V semiconductors such as gallium arsenide, indium phosphide and gallium phosphide exhibit the phase change effect, but during thermal treatment there is the risk of destruction of III–V semiconductor material because of the readily volatile components of gallium and indium.
  • the phase change effect is particularly prominent with ternary semiconductors such as IV–V–VI semiconductors, alternatively quarternary alloys such as silver indium antimony tellurite also exhibit a phase change effect.
  • the semitransparent mirror a phase change medium that has germanium antimony tellurite, this material permitting a phase change from amorphous to crystalline and vice versa with relatively low irradiation of energy.
  • a phase change medium that has germanium antimony tellurite
  • this material permitting a phase change from amorphous to crystalline and vice versa with relatively low irradiation of energy.
  • the layer made from phase change medium has a small thickness of between 15 and 50 nm, preferably of between 20 and 30 nm.
  • the first protective layer ensures that the phase change medium does not react with the substrate material during the brief melting operation.
  • the second protective layer supports the quick dissipation of heat and ensures that the melted phase change medium does not react with the surroundings.
  • the protective layers have a thickness of between 50 and 200 nm in this case.
  • the dissipation of heat can be supported, in addition, by a third layer in the form of a cover layer that simultaneously functions as a heat sink.
  • a cover layer has aluminum and/or an aluminum alloy, and is arranged at a thickness of 50 to 120 nm, preferably 70 to 100 nm, on the second protective layer.
  • the first and the second protective layers can have a mixture of zinc sulfite and silicon dioxide, the silicon dioxide ensuring the transparency that such protective layers have, and the zinc sulfite serving the purpose of thermal absorption.
  • a further embodiment of the invention provides an additional energy source for setting the ratio of reflectivity and transmission of the semitransparent mirror. This is particularly advantageous whenever the semitransparent mirror is provided for measuring or signaling beams and the energy source of the measuring unit does not suffice in order to provide in nanoseconds the melting energy for setting the ratio of transmission and reflectivity.
  • a method for producing a semitransparent mirror has the following method steps. Firstly, a transparent substrate is provided. A first protective layer is applied to a surface of the substrate. A layer composed of a phase change medium is subsequently deposited on this layer. Finally, a second protective layer is then applied to the phase change medium and a cover layer can subsequently be applied to the second protective layer.
  • the transparent substrate can be a glass plate, quartz plate or sapphire plate polished on at least one side.
  • the first protective layer is then applied to the polished surface at a thickness of between 50 and 200 nm and consists, for example, of a mixture of zinc sulfite and silicon dioxide.
  • Such a layer can be applied by means of sputtering technology, in the case of which a zinc sulfite silicon dioxide target is atomized, and this material is deposited on the polished surface of the transparent substrate in a uniform fashion.
  • the layer of the phase change medium is, by contrast, substantially thinner, at 15 to 50 nm, and can likewise be applied with the aid of sputtering technology.
  • a target composed of Ge 2 Sb 2 Te 5 is atomized, and the atomized material is deposited on the already produced first protective layer.
  • the phase change medium is distinguished in that it can be present both in amorphous and in crystalline state as a function of a thermal treatment, and can have all the intermediate stages between amorphous and crystalline in a continuous fashion.
  • the ratio between reflectivity and transparency can be set continuously, since crystalline material has a low transparency and a high reflectivity in a prescribed range of optical wavelength.
  • the phase change medium is briefly heated, that is to say for a few nanoseconds, above its melting point and cooled at high speed. This quick cooling rate is ensured, on the one hand, by the minimum thickness of the layer of between 15 and 50 nm and, on the other hand, by thermal dissipation to the first and second protective layers.
  • the dissipation of heat can be accelerated by applying to the second protective layer a cover layer that is composed of aluminum of from 50 to 120 nm, preferably from 70 to 100 nm, and which serves as heat sink.
  • a cover layer that is composed of aluminum of from 50 to 120 nm, preferably from 70 to 100 nm, and which serves as heat sink.
  • the phase change material In order to recrystallize the phase change material, the latter is heated only up to a recrystallization temperature below the melting point, but kept longer at this recrystallization temperature. This can be achieved by expanding the heating spot of a laser beam.
  • the second protective layer can have the same material as the first protective layer, and additionally serves for dissipating heat so that when the phase change medium is being melted there is neither a chemical reaction with the substrate material nor a chemical reaction with the surroundings or with the cover layer composed of aluminum or an aluminum alloy.
  • the protective layers therefore advantageously ensure that the chemical composition of the layer composed of a phase change medium does not change, and so there is virtually no restriction on the possible setting, the adjustment or trimming of the ratio between reflectivity and transmission of the semitransparent mirror.
  • optical components can be provided with such a layer sequence inside a housing of an optical assembly in order to adapt or trim optical paths.
  • the possible change in the absorption of the layer composed of phase change material is small in this case, the more so as, on the one hand, the layer itself is exceptionally thin at 15 to 50 nm and as, on the other hand, it can be assumed that the probability of the formation of phonons in an amorphous material in excitation by irradiation of light is even less than that of the formation of phonons in a crystalline material, which means it can be assumed that the absorption of the phase change medium changes only insubstantially when there is a change between amorphous and crystalline states.
  • the reduced reflectivity that forms owing to amorphization has the effect that the reduced decrease in absorption leads to a correspondingly slight increase in transmission. It is possible to achieve a change in transmission of up to 90% with the aid of the amorphization of the phase change medium, the transmission being high in the amorphous state of the phase change medium, and low when the phase change medium has crystallized.
  • a method for operating a semitransparent mirror has the following method steps. Firstly, a semitransparent mirror is provided for a unit. Pulsed energy packets, for example from a laser light source, are applied to said semitransparent mirror during operation, in order to set the ratio between reflectivity and transparency. After the pulsed energy packets have been applied to the mirror, the distribution of a measuring or signaling beam on the semitransparent mirror has changed owing to the newly set ratio between reflectivity and transparency.
  • the application of pulsed energy packets to the mirror can be performed, on the one hand, by the energy source of the measuring or signaling beam, or independently thereof by means of a second energy source, whose focussed beam scans the entire surface of the semitransparent mirror.
  • a separate second energy source for setting the ratio of reflectivity and transparency has the advantage of enabling a very precise adaptation and trimming of the semitransparent mirror. Such a separate second energy source is always required whenever the energy source of the measuring or signaling beam is not sufficient to produce the molten state of the phase change medium at certain points for a few nanoseconds.
  • semitransparent mirrors are used for beam splitting in the most varied optical applications such as sensor systems, interferometry, holography.
  • a mirror whose transmission can be varied, outside very wide limits by irradiation with infrared laser light substantially expands the possibilities for such optical assemblies.
  • the present invention discloses a mirror whose reflectivity and transmission can be reversibly varied by the irradiation of light. Use is made in this case of the principle of the phase change effect.
  • Phase change media are implemented for this purpose by means of a layered system.
  • By irradiating light in the form of laser pulses of suitable power, wavelength and a very short time duration it is possible to heat up crystalline material briefly within nanoseconds up to above the melting point.
  • the neighboring layers of the phase change medium ensure a rapid dissipation of heat, and thus a quenching operation. During the resulting rapid cooling, the material has no possibility to crystallize any more, but forms an amorphous state.
  • the present invention utilizes the different transmission behavior in amorphous and crystalline states.
  • the amorphous state can be reversed by renewed irradiation of laser light at a lower intensity and of longer pulse duration.
  • the material is heated in this case, but only to a recrystallization temperature. During the cooling that sets in more slowly in this case, the material recrystallizes and the initial state of high reflectivity and low transparency is reproduced.
  • FIG. 1 is a schematic diagram in partial section of the mode of operation of the semitransparent mirror of the invention
  • FIG. 2 is a schematic diagram of an interferometer with a semitransparent mirror of the invention
  • FIG. 3 is a view in elevation and partial section of an optoelectronic component using flip chip technology with a semitransparent mirror that is arranged on a sensor surface of a semiconductor chip, and
  • FIG. 4 is a view in elevation and partial section of an optoelectronic component using bonding technology with a semitransparent mirror that is arranged on a sensor surface of a semiconductor chip.
  • FIG. 1 shows a schematic illustration of the mode of operation of the semitransparent mirror 1 of the invention.
  • the semitransparent mirror 1 has a substrate 2 composed of glass that is transparent to the wavelength of an incident measuring or signaling beam 8 .
  • a layer sequence with a first protective layer 3 that is arranged on a polished top side 9 of the substrate 2 .
  • This first protective layer 3 has a thickness of between 50 and 200 nm and is composed of a mixture of zinc sulfite and silicon dioxide.
  • a layer 4 with a phase change medium of a thickness of between 15 and 50 nm is applied to this first protective layer 3 .
  • This layer 4 can be present in an amorphous or crystalline phase and continuously assume any intermediate state.
  • a second protective layer 5 Applied to the layer 4 with a phase change medium is a second protective layer 5 , which in this embodiment has the same composition and the same thickness as the first protective layer 3 .
  • a cover layer 7 is arranged on the second protective layer 5 as conclusion of this layer sequence.
  • the cover layer 7 has aluminum or an aluminum alloy with a thickness of between 50 and 100 nm. Because of its high thermal conductivity, the cover layer 7 composed of aluminum promotes quick cooling of the phase change medium during an amorphization phase.
  • the measuring or signaling beam 8 In order to set the degree of amorphization, and thereby to set the ratio between reflectivity and transparency, of the semitransparent mirror 1 , it is possible to use either the measuring or signaling beam 8 when it has a suitable power and wavelength and scanning is performed over the entire area of the semitransparent mirror 1 with a simultaneous output of short light pulses in the nanosecond range.
  • the transparent mirror 1 can be used as beam splitter, as is shown in FIG. 1 by the measuring or signaling beam 8 .
  • the measuring or signaling beam 8 is split at the layer 4 of the phase change medium into a reflected component beam 10 and a transmitted component beam 11 .
  • the reflected component beam 10 is emitted at the egress angle ⁇ , which is equal to the incidence angle ⁇ .
  • the emission angle ⁇ at which the transmitted component beam 11 leaves the semitransparent mirror 1 likewise corresponds to the angle ⁇ .
  • the representation of the beam splitting in FIG. 1 is greatly simplified, since the refraction processes at the individual layer transitions and the transition from the surroundings to the cover layer 7 , as well as the transmission from the substrate 2 to the surroundings are detected in the representation of the beam splitting of the measuring or signaling beam 8 .
  • FIG. 2 shows a schematic of an interferometer 12 with a semitransparent mirror 1 of the invention.
  • the interferometer 12 has two energy sources 6 and 13 .
  • the energy source 13 can be a laser unit that directs a measuring or signaling beam 8 on to the semitransparent mirror 1 .
  • the semitransparent mirror 1 has a transparent substrate 2 and the protective layers 3 and 5 , between which the layer 4 of the phase change medium is arranged.
  • a cover layer 7 serves to increase the dissipation of heat during the operation of setting the ratio of reflectivity and transparency of the semitransparent mirror 1 .
  • the second energy source 6 is a laser light source that outputs short laser light pulses in the nanosecond range of suitable power and suitable wavelength for setting the ratio between reflectivity and transparency of the phase change medium of the layer 4 .
  • An optical deflecting system 18 is used to deflect the laser beam 19 of the additional second energy source 6 and to guide it over the entire surface of the semitransparent mirror 1 in order to set the ratio between reflectivity and transparency.
  • the semitransparent mirror 1 is aligned at an angle ⁇ of 45° to the measuring or signaling beam 8 .
  • the interferometer 12 has two plane mirrors 14 and 15 , the first plane mirror 14 reflecting the transmitted component beam 11 of the measuring or signaling beam 8 , and the plane mirror 15 reflecting the reflected component beam 10 of the measuring or signaling beam 8 .
  • the reflected beams 20 and 21 are superimposed on one another and form reference beams 23 and 24 that are reflected by a concave mirror 16 on to a measuring surface 17 in the region of the focus of the concave mirror 16 , in order to image and measure the interference phenomena.
  • the interferometer 12 differs from a Michelson interferometer in that the semitransparent mirror 1 can be set with reference to its reflectivity and transparency, and that a second energy source 6 with a deflecting device 18 is provided for setting the ratio between reflectivity and transparency.
  • the wavelength of the laser beam 19 of the energy source 6 is tuned to the phase change medium of the layer 4 of the semitransparent mirror 1 at 650 nm.
  • the power of the laser pulses of the energy source 6 is adapted to the requirements of the phase change medium of the layer 4 .
  • the transparency of the semitransparent mirror 1 can therefore be manipulated by the energy source 6 , as a result of which the light intensity can be controlled and distributed reversibly between the component beams 10 and 11 .
  • One of the two plane mirrors 14 or 15 is displaceably arranged in order to set the path difference between the component beams 10 and 11 .
  • the interference pattern on the measuring surface 17 changes correspondingly upon displacement of one of the plane mirrors 14 or 15 .
  • FIG. 3 shows an optoelectronic component 25 using flip chip technology and having a semitransparent mirror 1 that is arranged on a sensor surface 26 of a semiconductor chip 27 .
  • the sensor surface 26 of the semiconductor chip 27 is circular and is delimited by a ring electrode 28 between which the semitransparent mirror 1 is arranged.
  • the sensor surface 26 belongs to a sensor region 29 of the semiconductor chip 27 with a PN junction 30 .
  • Contact surfaces 31 that bear the flip chip contacts 32 are arranged in the edge region of the sensor region 29 .
  • Further contact surfaces 33 are arranged outside the sensor region 29 on the top side of the semiconductor chip 27 with the aid of corresponding flip chip contacts.
  • a measuring signal that corresponds to the transmitted component beam 11 can thereby be tapped between the flip chip contacts 32 and 34 .
  • the semiconductor chip is surrounded by a plastic compound 35 that simultaneously forms a housing of the optoelectronic component 25 .
  • the measuring voltage can be tapped on the same side of the housing 36 between the flip chip contacts 32 and 34 on which the semitransparent mirror 1 is arranged.
  • FIG. 4 shows an optoelectronic component 40 using bonding technology and having a semitransparent mirror 1 that is arranged on a sensor surface 26 of a semiconductor chip 27 .
  • This optoelectronic component 40 also has a housing 36 composed of a plastic compound 35 .
  • the semiconductor chip 27 embedded in the plastic compound has a sensor region 29 with a sensor surface 26 and a contact surface 31 .
  • the sensor surface 26 is circular and is delimited by a circular ring electrode 28 in which the semitransparent mirror 1 is arranged.
  • At least one further contact surface 33 is provided outside the sensor region 29 of the semiconductor chip 27 such that there occurs between the contact surfaces 33 and 31 a photovoltage that is triggered by the transmitted component beam 11 of the measuring or signaling beam 8 .
  • this optoelectronic component 40 the measuring signal is conducted via bonding wires 39 from the contact surfaces 31 and 33 to outer contact surfaces 37 and 38 , respectively, which are arranged on the side of the housing 36 opposite the semitransparent mirror 1 .
  • an optoelectronic component 40 can be used as an optoelectronic switch by varying the ratio of reflectivity and transparency from crystalline to amorphous and vice versa by irradiating energy packets.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optical Elements Other Than Lenses (AREA)
US10/831,134 2003-04-24 2004-04-26 Semitransparent mirror and methods for producing and operating such a mirror Expired - Lifetime US7012751B2 (en)

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DE10318667.0-51 2003-04-24
DE10318667A DE10318667B4 (de) 2003-04-24 2003-04-24 Optoelektronisches Bauteil mit einem Teildurchlässigen Spiegel und Verfahren zu seinem Betrieb

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Cited By (1)

* Cited by examiner, † Cited by third party
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CN109375447A (zh) * 2018-12-18 2019-02-22 深圳市华星光电技术有限公司 显示器及电子设备

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US9264150B2 (en) * 2012-03-28 2016-02-16 Globalfoundries Inc. Reactive metal optical security device and methods of fabrication and use

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JPH04115214A (ja) 1990-09-05 1992-04-16 Pioneer Electron Corp ライトバルブ素子及び投射型表示装置
US6078558A (en) 1997-07-02 2000-06-20 Commissariat A L'energie Atomique Optical recording medium having two superimposed recording levels and corresponding recording device and reading process
US20020119278A1 (en) 2000-12-19 2002-08-29 Commissariat A L'energie Atomique Laser beam optical recording medium featuring several read/write levels

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JPH04179278A (ja) * 1990-11-13 1992-06-25 Sumitomo Electric Ind Ltd 受光素子
DE19528094C2 (de) * 1995-08-01 1999-04-15 Dornier Gmbh IR-Modulator und Wärmebildgerät mit diesem

Patent Citations (3)

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JPH04115214A (ja) 1990-09-05 1992-04-16 Pioneer Electron Corp ライトバルブ素子及び投射型表示装置
US6078558A (en) 1997-07-02 2000-06-20 Commissariat A L'energie Atomique Optical recording medium having two superimposed recording levels and corresponding recording device and reading process
US20020119278A1 (en) 2000-12-19 2002-08-29 Commissariat A L'energie Atomique Laser beam optical recording medium featuring several read/write levels

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109375447A (zh) * 2018-12-18 2019-02-22 深圳市华星光电技术有限公司 显示器及电子设备
WO2020124863A1 (zh) * 2018-12-18 2020-06-25 深圳市华星光电技术有限公司 显示器及电子设备

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DE10318667B4 (de) 2009-05-20
US20040223243A1 (en) 2004-11-11

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