US6723449B2 - Structure and plating method of thin film magnetic head and magnetic storage apparatus - Google Patents

Structure and plating method of thin film magnetic head and magnetic storage apparatus Download PDF

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Publication number
US6723449B2
US6723449B2 US09/917,892 US91789201A US6723449B2 US 6723449 B2 US6723449 B2 US 6723449B2 US 91789201 A US91789201 A US 91789201A US 6723449 B2 US6723449 B2 US 6723449B2
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magnetic
layer
face
centered cubic
thin film
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Expired - Fee Related, expires
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US20020106533A1 (en
Inventor
Kazue Kudo
Yasuyuki Okada
Nobuo Yoshida
Moriaki Fuyama
Noriyuki Saiki
Gen Oikawa
Takashi Kawabe
Makoto Morijiri
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HGST Japan Ltd
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Hitachi Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109—Details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109—Details
    • G11B5/313—Disposition of layers
    • G11B5/3143—Disposition of layers including additional layers for improving the electromagnetic transducing properties of the basic structure, e.g. for flux coupling, guiding or shielding
    • G11B5/3146—Disposition of layers including additional layers for improving the electromagnetic transducing properties of the basic structure, e.g. for flux coupling, guiding or shielding magnetic layers
    • G11B5/3153—Disposition of layers including additional layers for improving the electromagnetic transducing properties of the basic structure, e.g. for flux coupling, guiding or shielding magnetic layers including at least one magnetic thin film coupled by interfacing to the basic magnetic thin film structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1121—Multilayer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/115—Magnetic layer composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12931—Co-, Fe-, or Ni-base components, alternative to each other

Definitions

  • the present invention relates to a thin film magnetic head used for recording/reproduction in a magnetic disk storage apparatus, a manufacturing method therefor, and a magnetic disk storage apparatus and disk array system in which to mount the thin film magnetic head.
  • Bs saturation magnetic flux density
  • Materials having a high saturation magnetic flux density include CoNiFe (Bs>1.7T) which has a higher Bs than Ni 45 Fe 55 that is currently used as the magnetic core material (Bs: 1.6T) as described in JP-A-89422/1994, JP-A-241503/1996, JP-A-346202/1994 and JP-A-3489/1995.
  • Japanese Patent Publication No. 2821456 discloses a method of preparing a plated layer with a high Bs using a bath without the addition of saccharine sodium in the plating solution composition.
  • the technique includes the use of a material with a high saturation magnetic flux density (Bs) capable of producing a sufficient magnetic field to write into a high coercive force medium.
  • Bs saturation magnetic flux density
  • the Co—Ni—Fe soft magnetic material layer prepared from a bath that does not contain a stress relieving agent has a Bs of at least 1.9T and a Hch of no more than 2.5 Oe. Because since the stress of the plated layer is large, peeling may ensure in a formed layer with a thickness greater then approximately 2.0 ⁇ m, making the layer formation difficult.
  • the peak intensities at fcc (111) face, fcc (200) face and bcc (110) face in the X-ray diffraction as I(111), I(200) and I(110), respectively such a layer could not be obtained unless a substantially face-centered cubic system was formed having a peak intensity ratio of 0.1 ⁇ I(200)/I(111) ⁇ 0.2 and annealing was applied after the formation of the layer.
  • unevenness may increase in the surface shape of a layer if the layer composition is deviated in a region containing a slight amount of body-centered cubics in the face-centered cubics, which results in clouding and an inability to obtain a gloss layer.
  • a magnetic layer containing Co, Ni and Fe is formed by a sputtering method as a plated underlayer and a magnetic layer containing Co, Ni and Fe is formed on the plated underlayer by an electroplating method to form a magnetic pole layer.
  • Co, Ni and Fe are preferably present as: 40 wt % ⁇ Co ⁇ 70 wt %; 10 wt % ⁇ Ni ⁇ 25 wt %; and 10 wt % ⁇ Fe ⁇ 30 wt % in the sputtered layer as the plated layer and the plated underlayer.
  • bcc is preferably observed for the sputter layer as the plated underlayer under X-ray diffraction, and the peak intensity ratio is: I(200)/I(111) ⁇ 0.5 and I(110)/I(111) ⁇ 1, when defining peak intensities in fcc (111) face, fcc (200) face, and bcc (110) face in the X-ray diffractiometry for the plated layer as I(111), I(200) and I(110), respectively.
  • a small peak intensity ratio I(200)/I(111), I(110)/I(111) means that crystals are intensely oriented to the face-centered cubic fcc (111) face.
  • the films which are substantially fcc described in JP-A-34020/1994, Japanese Patent Publication No. 2821456 belong to this case.
  • the present invention preferably uses a soft magnetic thin film in which the constitutional ratio of the face-centered cubic system and body-centered cubic system (ratio for the body-centered cubic system and the face-centered cubic system in the magnetic layer) is: 40% ⁇ body-centered cubic system ⁇ 80% and 20% ⁇ face-centered cubic system ⁇ 60%, and face-centered cubic system+body-centered cubic system is 100%, it may suffice that the peak intensity ratio is I(200)/I(111) ⁇ 0.5 and I(110)/I(111) ⁇ 1.
  • the deviation in the layer composition if any, preferably has no effect on the surface shape of the layer, and a glossy layer can be prepared stably as in this invention.
  • the crystallinity of the plated layer is enhanced, and the crystallographic orientation can be controlled more easily with the present invention compared to the conventional applications.
  • the CoNiFe layer is used partially or entirely for the upper magnetic pole of the writing head, since the underlayer is situated on the side of the magnetic gap relative to the lower magnetic pole, the saturation magnetic flux of the underlayer, when using a permalloy layer for instance, is lower than that of the plated layer which decreases the writing magnetic field.
  • the CoNiFe layer when used according to this invention, it preferably has a saturation magnetic flux density equal to or greater than the plated layer to improve the characteristics of the head.
  • the CoNiFe layer When different kinds of metals are laminated, they may lead to cell reactions that may possibly corrode the CoNiFe plated layer, but such corrosion may be avoided when the CoNiFe layer is used also for the underlayer, as in at least one preferred embodiment of the present invention.
  • the CoNiFe magnetic thin film of the present invention may form a CoNiFe magnetic plated layer containing saccharine sodium by preparing the layer from a plating bath containing saccharine sodium as a stress relieving agent and conducting the electroplating under the following preferred conditions: a bath temperature within the range from 25° C. to 35° C.; a current density from 3 to 12 mA/cm 2 ; and a pH value from approximately 3.2 to 4.0.
  • a thick layer of at least 3 ⁇ m may also be formed by conducting plating under the plating conditions described above.
  • the magnetic characteristics of the soft magnetic layer obtained according to preferred embodiments of the present invention may have: a saturation magnetic flux density Bs of: 17500 gauss ⁇ Bs ⁇ 20000 gauss; a coercive force in the difficult axis direction Hch of: Hch ⁇ 1.50 Oe; and a saturation magnetic flux density of the underlayer that is greater than the Bs of the plated layer.
  • a saturation magnetic flux density Bs of: 17500 gauss ⁇ Bs ⁇ 20000 gauss
  • Hch coercive force in the difficult axis direction
  • Hch Hch ⁇ 1.50 Oe
  • a saturation magnetic flux density of the underlayer that is greater than the Bs of the plated layer.
  • recording may be possible to a recording medium with a coercive force of at least 4000 Oe by using the soft magnetic CoNiFe layer partially or entirely as the lower and upper magnetic cores of the writing head according to the present invention.
  • FIG. 1 illustrates a process flow for a magnetic pole layer of a writing head for a thin film magnetic head
  • FIG. 2 is a ternary system diagram showing the compositional range for a CoNiFe layer obtained according to the present invention
  • FIG. 3 is a graph showing the relationship between the amount of saccharine sodium added and the layer stress of the CoNiFe layer;
  • FIG. 4 is a graph showing an X-ray diffraction pattern of a CoNiFe layer
  • FIG. 5 shows a B-H curve of a CoNiFe layer according to the present invention
  • FIG. 6 is a cross sectional view of a recording/reproducing separation type thin film magnetic head using the CoNiFe layer prepared according to the present invention to the upper portion of writing head and to a portion of a lower magnetic core;
  • FIG. 7 is a perspective view illustrating a structure of a magnetic disk storage apparatus according to a preferred embodiment of the present invention.
  • FIG. 1 shows a process flow for a magnetic pole layer of a writing head in a thin film magnetic head in a first exemplary embodiment according to the present invention.
  • an Ar gas is preferably introduced into a sputtering chamber at a degree of attained vacuum of at least 5 ⁇ 10 ⁇ 5 Pa, and a CoNiFe layer 3 as a plated underlayer is formed to 100 nm by a DC or RF sputtering method using a CoNiFe alloy target (FIG. 1 A).
  • a non-magnetic metal may be formed to about 5 nm as an adhesion layer.
  • a CoNiFe layer 4 is prepared on the underlayer 3 using a plating solution containing saccharine sodium at approximately 1.5 g/l as a stress relieving agent under the conditions shown in Table 1.
  • a magnetic gap layer 5 is formed thereon.
  • an insulation layer made of materials such as Al 2 O 3 or SiO 2 is used as a single layer or a lamination layer.
  • a CoNiFe layer 3 as a plated underlayer is preferably formed using a sputtering method in the same manner as described above.
  • a resist frame 7 for forming an upper magnetic core is prepared and, after pattering the same into a predetermined shape, a CoNiFe layer 4 and a 46NiFe layer 6 are prepared successively by the plating method (FIG. 1 C). While the 46NiFe layer 6 is used to a portion of the upper and lower magnetic poles in this example, the entire portion may be formed by using the CoNiFe layer 4 according to this invention.
  • the resist 7 and the underlayer 3 are removed, and a trimming step is thereafter applied for fabricating the upper and lower magnetic cores, each to a predetermined track width.
  • Exemplary plating conditions are shown in Table 1,and a compositional range for preparing a CoNiFe layer is shown in FIG. 2; specifically, 45 wt % ⁇ Co ⁇ 70 wt %, 10 wt % ⁇ Ni ⁇ 25 wt % and 10 wt % ⁇ Fe ⁇ 30 wt %, within the range shown in Table 2.
  • the stress in the layer can be reduced to about 200 MPa. However, if it is added by 2.5 g/l or more, the stress does not change substantially.
  • the addition amount of saccharine sodium is preferably between 0.5 to 2.0 g/l.
  • FIG. 4 shows an X-ray diffraction pattern of the CoNiFe layer.
  • a CoNiFe layer prepared by the sputtering method FIG. 4 A
  • a CoNiFe layer prepared by the electroplating method on this underlayer FIG. 4 B
  • a CoNiFe layer prepared by the conventional method FIG. 4 C
  • For the CoNiFe layer prepared by the sputtering method only the body-centered cubic system is observed.
  • the constitutional ratio is determined by peak decomposition
  • the body-centered cubic system is preferably 53% and the face-centered cubic system is 47%.
  • the layer prepared by the conventional method consists almost entirely of the face-centered cubic system, with little body-centered cubic system observed.
  • FIG. 5 shows a B-H curve for a CoNiFe layer prepared according to at least one embodiment of the present invention.
  • the magnetic characteristics of the magnetic layer are such that the saturation magnetic flux density Bs is 18200 gauss and the coercive force Hch in the direction of the difficult axis is 0.7 Oe. Referring to Bs, when 17500 gauss ⁇ Bs ⁇ 20000 gauss and Hch ⁇ 1.5 Oe, the purpose of this invention may be attained.
  • FIG. 6 shows a cross sectional view of an exemplary recording/reproducing separation type thin film magnetic head using the CoNiFe layer prepared according to the invention for the upper portion of the writing head and a portion of the lower magnetic core.
  • a lower shield layer 9 and a lower magnetic gap layer are formed on a non-magnetic substrate 8 , on which an MR or GMR sensor 10 is formed as a reading device.
  • an upper magnetic gap layer and an upper magnetic shield layer 2 are formed.
  • a magnetic gap layer 5 for the reading device and the writing device is formed, on which a lower magnetic core is formed.
  • a 46NiFe layer is formed as the lower magnetic core by the plating method.
  • a CoNiFe layer 3 is formed to 100 nm by sputtering, and then a CoNiFe layer 4 is plated to a predetermined thickness by a plating method. Successively, the magnetic gap layer was formed.
  • another CoNiFe layer 3 is formed to 100 nm by sputtering and a resist frame for forming the upper magnetic core is prepared.
  • Another CoNiFe layer 4 and a 46NiFe layer are prepared successively by a plating method.
  • the resist and the underlayer are removed, and, for fabricating both the upper and lower magnetic core to a predetermined track width, a trimming step is applied. Further, coils and an organic insulating layer are formed and the 46NiFe layer is frame plated. After fabrication, experiments confirmed that the recording/reproducing separation type thin film magnetic head manufactured as described above showed favorable recording characteristics and could conduct recording satisfactorily to a high coercive force medium.
  • FIG. 7 is a perspective view of an exemplary magnetic disk storage apparatus mounting a thin film magnetic head manufactured according to this invention.
  • the magnetic disk storage apparatus preferably includes: a magnetic disk 15 for recording information; a motor for rotating the magnetic disk 15 ; an actuator for locating the magnetic head 17 for writing information to the magnetic disk 15 and reading information from the magnetic disk to an aimed position; and a voice coil motor 19 .
  • the storage apparatus may also include a spring attached to the magnetic head for stably keeping the sub-micron space relative to a magnetic disk 15 and a guide arm 20 fixed with the spring, which is driven by the actuator and voice coil motor. Further, although not illustrated, the apparatus also comprises a magnetic disk rotation control system, a head positioning control system and a recording/reproducing signal processing system. With the structure described above, a magnetic disk storage apparatus of high recording density may be attained.
  • an intense recording magnetic field may be generated, and a thin film magnetic head corresponding to high recording density can be provided.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Physical Vapour Deposition (AREA)
US09/917,892 2000-12-07 2001-07-31 Structure and plating method of thin film magnetic head and magnetic storage apparatus Expired - Fee Related US6723449B2 (en)

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JP2000377989A JP2002183909A (ja) 2000-12-07 2000-12-07 薄膜磁気ヘッドの製造方法及び薄膜磁気ヘッドとそれを搭載した磁気ディスク装置

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030128484A1 (en) * 2001-12-25 2003-07-10 Fujitsu Limited Ferromagnetic layered material having reliable uniaxial anisotropy
US20060203385A1 (en) * 2005-03-09 2006-09-14 Hitachi Global Storage Technologies Netherlands B.V. Thin film magnetic head with layer having high saturation magnetic flux density, and magnetic storage apparatus
US20080002308A1 (en) * 2006-06-19 2008-01-03 Hitachi Global Storage Technologies Netherlands B.V. Magnetic shield, manufacturing method thereof and thin film magnetic head employing the same
US7522377B1 (en) * 2002-05-01 2009-04-21 Western Digital (Fremont), Llc Magnetic write head with high moment magnetic thin film formed over seed layer
US20090154014A1 (en) * 2007-12-18 2009-06-18 Kazue Kudo Thin film magnetic head and manufacturing method thereof
US20110056839A1 (en) * 2009-09-10 2011-03-10 Western Digital (Fremont), Llc Method and system for corrosion protection of layers in a structure of a magnetic recording transducer
US8455119B1 (en) 2002-05-01 2013-06-04 Western Digital (Fremont), Llc Disk having an underlayer that includes a plurality of nonmagnetic layers interleaved with magnetic layers
US9135930B1 (en) 2014-03-06 2015-09-15 Western Digital (Fremont), Llc Method for fabricating a magnetic write pole using vacuum deposition

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US7688545B1 (en) * 2002-09-11 2010-03-30 Seagate Technology Llc Recording head writer with high magnetic moment material at the writer gap and associated process
JP4183554B2 (ja) * 2002-09-12 2008-11-19 Ｔｄｋ株式会社 軟磁性膜の製造方法と薄膜磁気ヘッドの製造方法
JP4047115B2 (ja) * 2002-09-13 2008-02-13 アルプス電気株式会社 軟磁性膜及びこの軟磁性膜を用いた薄膜磁気ヘッド、ならびに、前記軟磁性膜の製造方法
JP2007335790A (ja) * 2006-06-19 2007-12-27 Hitachi Global Storage Technologies Netherlands Bv 磁性膜及びその製造方法、薄膜磁気ヘッド
CN108806726B (zh) * 2018-05-04 2019-11-15 佛山科学技术学院 一种智能磁敏设备存储方法及装置

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0689422A (ja) 1992-09-08 1994-03-29 Fujitsu Ltd コバルト−鉄−ニッケル磁性膜の製造方法
JPH06346202A (ja) 1993-06-11 1994-12-20 Tdk Corp 軟磁性合金、軟磁性薄膜および多層膜
JPH073489A (ja) 1993-04-23 1995-01-06 Tdk Corp 軟磁性薄膜
JPH08241503A (ja) 1995-03-03 1996-09-17 Hitachi Ltd 薄膜磁気ヘッド及びその製造方法
US5862022A (en) * 1996-09-19 1999-01-19 Tdk Corporation Ferromagnetic tunnel junction, magnetoresistive element and magnetic head
US5935403A (en) * 1996-05-28 1999-08-10 Read-Rite Smi Corporation Magnetic thin film and magnetic thin film manufacturing method
US6120918A (en) * 1997-07-03 2000-09-19 Nec Corporation Co-Fe-Ni thin magnetic film, process for producing the same, composite thin film magnetic head, and magnetic recording device
US6239948B1 (en) * 1999-07-23 2001-05-29 Headway Technologies, Inc. Non-magnetic nickel containing conductor alloys for magnetic transducer element fabrication
US6262867B1 (en) * 1995-02-03 2001-07-17 Hitachi, Ltd Thin film magnetic head with Ni-Fe alloy thin film
US6466416B1 (en) * 1999-08-11 2002-10-15 Nec Corporation Magnetic head, method for making the same and magnetic recording/reproducing device using the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5982624A (ja) * 1982-10-13 1984-05-12 Toray Ind Inc 薄膜型磁気記録媒体
JP3623417B2 (ja) * 1999-12-03 2005-02-23 アルプス電気株式会社 スピンバルブ型薄膜磁気素子及び薄膜磁気ヘッド

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0689422A (ja) 1992-09-08 1994-03-29 Fujitsu Ltd コバルト−鉄−ニッケル磁性膜の製造方法
JPH073489A (ja) 1993-04-23 1995-01-06 Tdk Corp 軟磁性薄膜
JPH06346202A (ja) 1993-06-11 1994-12-20 Tdk Corp 軟磁性合金、軟磁性薄膜および多層膜
US6262867B1 (en) * 1995-02-03 2001-07-17 Hitachi, Ltd Thin film magnetic head with Ni-Fe alloy thin film
JPH08241503A (ja) 1995-03-03 1996-09-17 Hitachi Ltd 薄膜磁気ヘッド及びその製造方法
US5935403A (en) * 1996-05-28 1999-08-10 Read-Rite Smi Corporation Magnetic thin film and magnetic thin film manufacturing method
US5862022A (en) * 1996-09-19 1999-01-19 Tdk Corporation Ferromagnetic tunnel junction, magnetoresistive element and magnetic head
US6120918A (en) * 1997-07-03 2000-09-19 Nec Corporation Co-Fe-Ni thin magnetic film, process for producing the same, composite thin film magnetic head, and magnetic recording device
US6239948B1 (en) * 1999-07-23 2001-05-29 Headway Technologies, Inc. Non-magnetic nickel containing conductor alloys for magnetic transducer element fabrication
US6466416B1 (en) * 1999-08-11 2002-10-15 Nec Corporation Magnetic head, method for making the same and magnetic recording/reproducing device using the same

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US20030128484A1 (en) * 2001-12-25 2003-07-10 Fujitsu Limited Ferromagnetic layered material having reliable uniaxial anisotropy
US7292415B2 (en) * 2001-12-25 2007-11-06 Fujitsu Limited Ferromagnetic layered material having reliable uniaxial anisotropy
US7522377B1 (en) * 2002-05-01 2009-04-21 Western Digital (Fremont), Llc Magnetic write head with high moment magnetic thin film formed over seed layer
US8455119B1 (en) 2002-05-01 2013-06-04 Western Digital (Fremont), Llc Disk having an underlayer that includes a plurality of nonmagnetic layers interleaved with magnetic layers
US20060203385A1 (en) * 2005-03-09 2006-09-14 Hitachi Global Storage Technologies Netherlands B.V. Thin film magnetic head with layer having high saturation magnetic flux density, and magnetic storage apparatus
US7679860B2 (en) * 2005-03-09 2010-03-16 Hitachi Global Storage Technologies Netherlands B.V. Thin film magnetic head with layer having high saturation magnetic flux density, and magnetic storage apparatus
US20080002308A1 (en) * 2006-06-19 2008-01-03 Hitachi Global Storage Technologies Netherlands B.V. Magnetic shield, manufacturing method thereof and thin film magnetic head employing the same
US7995311B2 (en) * 2006-06-19 2011-08-09 Hitachi Global Storage Technologies Netherlands Bv Magnetic shield, manufacturing method thereof and thin film magnetic head employing the same
US20090154014A1 (en) * 2007-12-18 2009-06-18 Kazue Kudo Thin film magnetic head and manufacturing method thereof
US20110056839A1 (en) * 2009-09-10 2011-03-10 Western Digital (Fremont), Llc Method and system for corrosion protection of layers in a structure of a magnetic recording transducer
US8449948B2 (en) 2009-09-10 2013-05-28 Western Digital (Fremont), Llc Method and system for corrosion protection of layers in a structure of a magnetic recording transducer
US9135930B1 (en) 2014-03-06 2015-09-15 Western Digital (Fremont), Llc Method for fabricating a magnetic write pole using vacuum deposition

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US20040169959A1 (en) 2004-09-02
US7150819B2 (en) 2006-12-19
US20020106533A1 (en) 2002-08-08

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