US6638592B1 - Ceramic/metal substrate, especially composite substrate - Google Patents
Ceramic/metal substrate, especially composite substrate Download PDFInfo
- Publication number
- US6638592B1 US6638592B1 US09/589,149 US58914900A US6638592B1 US 6638592 B1 US6638592 B1 US 6638592B1 US 58914900 A US58914900 A US 58914900A US 6638592 B1 US6638592 B1 US 6638592B1
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- metal
- ceramic
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- substrate according
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 166
- 239000002184 metal Substances 0.000 title claims abstract description 166
- 239000000758 substrate Substances 0.000 title claims abstract description 133
- 239000000919 ceramic Substances 0.000 title claims abstract description 75
- 239000002131 composite material Substances 0.000 title description 45
- 230000009467 reduction Effects 0.000 claims description 59
- 238000001465 metallisation Methods 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 238000000926 separation method Methods 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229940024548 aluminum oxide Drugs 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052574 oxide ceramic Inorganic materials 0.000 description 2
- 239000011224 oxide ceramic Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/481—Insulating layers on insulating parts, with or without metallisation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/359—Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/361—Removing material for deburring or mechanical trimming
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
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- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/52—Ceramics
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- C—CHEMISTRY; METALLURGY
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/343—Alumina or aluminates
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- C—CHEMISTRY; METALLURGY
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/366—Aluminium nitride
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
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- C—CHEMISTRY; METALLURGY
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- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/86—Joining of two substrates at their largest surfaces, one surface being complete joined and covered, the other surface not, e.g. a small plate joined at it's largest surface on top of a larger plate
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- H05K2201/09036—Recesses or grooves in insulating substrate
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- H—ELECTRICITY
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
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- H05K2203/302—Bending a rigid substrate; Breaking rigid substrates by bending
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
- H05K3/0052—Depaneling, i.e. dividing a panel into circuit boards; Working of the edges of circuit boards
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/15—Sheet, web, or layer weakened to permit separation through thickness
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
Definitions
- the invention pertains to a ceramic/metal substrate.
- Ceramic/metal substrates are known, especially ceramic/copper substrates. These substrates are used for the manufacture of electric or electronic circuits, especially electric or electronic power circuits, and form the “printed boards” for these.
- such substrates have a ceramic layer that is provided with metalization on both surfaces, of which for example the metalization on the top of the ceramic layer is textured or structured in such a way, for example by using an etching process.
- the metalization then forms the conductors, contact surfaces etc. required for the switching circuit.
- a composite or multiple substrate (DE-PS 43 19 944) is known, in which at least two single substrates that are connected to each other as one piece are integrally formed on a large-format ceramic plate or layer. They are provided with at least one metal surface on at least one surface of the ceramic layer and connect by means of at least one predetermined break line in the ceramic layer. The separation of the composite substrate into the single substrates takes place on these predetermined break lines after applying of the electric or electronic components, by means of breaking.
- the disadvantage of this is that—due to internal tensions in the ceramic/metal substrate that result from the temperatures arising when applying the metalization sand due to the different thermal expansion coefficients of ceramic and metal—uncontrolled fractures, separation or breakage can occur. Although such uncontrolled breaks occur in only 1 to 5% of all cases, the resulting loss of production and damage is not inconsiderable, especially when the separation into the single substrates does not take place until after assembly.
- the metalization required for electric conductors, connections etc. on ceramic e.g. on aluminum-oxide ceramic is produced by means of the so-called “DCB process” (direct copper bond technology), using metal or copper foils or metal or copper sheets forming the metalization that have a layer or a coating (melt-on layer) consisting of a chemical compound of the metal and a reactive gas, preferably oxygen.
- DCB process direct copper bond technology
- metal or copper foils or metal or copper sheets forming the metalization that have a layer or a coating (melt-on layer) consisting of a chemical compound of the metal and a reactive gas, preferably oxygen.
- this layer or coating forms an eutectic system with a melting temperature under the melting temperature of the metal (e.g. copper), so that by application of the foil on the ceramic and by heating all layers these can be connected to each other, by melting on the metal or copper in the area of the melt-on layer or oxide layer.
- the metal e.g. copper
- This DCB technology then has the following processing stages:
- the object of the invention is to avoid this disadvantage.
- FIG. 1 shows a simplified representation in top view of a ceramic/metal substrate in the form of a composite substrate according to the present invention in unassembled condition;
- FIG. 2 shows a simplified representation in bottom view of the composite substrate in FIG. 1;
- FIG. 3 shows a section corresponding to the line I—I in FIG. 1;
- FIG. 4 shows an enlarged partial representation of the rear view of the composition substrate in FIG. 1;
- FIG. 5 shows a partial section through the composite substrate in a possible embodiment
- FIG. 6 shows an enlarged partial representation of a view of the bottom of the composite substrate in FIG. 1 in the area of a single substrate in a further possible embodiment
- FIG. 7 shows a partial section corresponding to the line II—II in FIG. 6;
- FIGS. 8, 9 and 10 each show an enlarged partial representation of a view of the bottom of the composite substrate in a further embodiment
- FIG. 11 shows a section corresponding to the line III—III in FIG. 10;
- FIG. 12 shows a representation similar to FIG. 6 of a further possible embodiment
- FIG. 14 shows a simplified representation of a bottom view of a composite substrate of a further embodiment of the invention.
- FIG. 15 shows a section through the composite substrate of FIG. 14 corresponding to the line V—V of FIG. 14;
- FIG. 16 shows a top view of an assembled composite substrate
- FIG. 17 shows a further possible embodiment in a representation similar to FIG. 2 .
- FIGS. 1-13 three perpendicular spatial axes (X-axis, Y-axis and Z-axis) are indicated in the FIGS. 1-13, of which the X- and Y-axes define the plane of the respective composite substrate (X-Y plane) and the Z-axis lies in the direction of the thickness of the respective composite substrate.
- the composite substrate depicted in FIGS. 1-4 and generally referred to as 1 consists essentially of a ceramic plate or ceramic layer 2 that is, for example, aluminum nitride ceramic, or aluminum oxide ceramic, and in the embodiments of FIGS. 1-3 is provided with a textured metalization on both surfaces, on the top with the metalization 3 and on the bottom with the metalization 4 .
- the metalizations are achieved in the depicted embodiments by applying a metal foil, e.g. a copper foil to each surface of the ceramic layer 2 by means of the DCB technology.
- the texture or structuring of the metalizations 3 and 4 is effected with the usual means known to the trade, for example, by means of masking and etching processes.
- the metalization 3 on the top is textured in such a way that it forms several metal surfaces 3 ′ that are provided for in several rows extending the direction of the X-axis and connecting with each other in the direction of the Y-axis.
- the composite substrate 1 in the depicted embodiments, is formed with a rectangular circumference, in such a way that the shorter sides extend in the direction of the X-axis and the longer sides extend in the direction of the Y-axis.
- the metalization 3 is textured in such a way that it forms on the edges 5 and 6 rectangular or striated metal surfaces 3 ′′ (along the edges 5 ) and 3 ′′′ (along the edges 6 ), whereby the two metal surfaces 3 ′′ both extend along the entire width (distance of the two edges 6 ) of the composite substrate 1 and the two metal surfaces 3 ′′ end with both ends in the vicinity of a metal surface ( 3 ′′), respectively.
- the metal surfaces 3 ′ lie with their edges parallel to the edges 5 and 6 and thus also in the X-axis or Y-axis. Also the striated or elongated rectangular metal surfaces 3 ′′ and 3 ′′′ lie with their edges parallel to the edges 5 and 6 and thus in the direction of the X-axis or Y-axis.
- All metal surfaces 3 ′, 3 ′′, 3 ′′′ are at a distance from an adjacent metal surface, respectively, as described in more detail below.
- grooves forming predetermined break lines 7 and 8 are effected in such a way that these predetermined break lines extend not only between the individual metal surfaces 3 ′ forming the single substrates, but also between the metal surfaces 3 ′′ and adjacent metal surfaces 3 ′ and 3 ′′′ as well as between the metal surfaces 3 ′′′ and adjacent metal surfaces 3 ′.
- the predetermined break line 7 extends in the direction of the X-axis and the predetermined break line 8 in the direction of the Y-axis, whereby an outer predetermined break line 7 that is adjacent to the metal surface 3 ′′ extends across the entire width of the composite substrate 1 in the depicted-embodiment, i.e. also in the free areas of the top surface of the ceramic layer 2 between the metalizations 3 ′′ and 3 ′′′.
- the two outer predetermined break lines 8 both extend between the respective metal surface 3 ′′′ and the adjacent metal surfaces 3 ′ and end in the depicted embodiment at the metal surfaces 3 ′′ or at the outer predetermined break lines 7 extending parallel to these metal surfaces.
- the metalization 4 on the bottom side of the composite substrate 1 is textured in such a way that this metalization forms a number of metal surfaces 4 ′ that correspond to the metal surfaces 3 ′ and of which one metal surface 4 ′ is directly adjacent to a metal surface 3 ′, respectively.
- the metal surfaces 4 ′ are, in the same manner as the metal surfaces 3 ′, arranged in several rows and lie with their edges parallel to the edges 5 and 6 .
- the metalization 4 forms metal surfaces 4 ′′ and 4 ′′′ that correspond to the metal surfaces 3 ′′ and 3 ′′′ and of which each metal surface 4 ′′ and 4 ′′′ lies adjacent to a metal surface 3 ′′ and 3 ′′′, respectively.
- the metal surfaces 4 ′, 4 ′′ and 4 ′′′ are at a distance from each other at the predetermined break lines 7 and 8 , so that the bottom of the ceramic layer 2 there is free.
- the composite substrate especially after texturing of the metal surfaces 3 ′ and after assembly, can be separated into single substrates or into electric components formed by said substrates by breaking along the predetermined break lines 7 and 8 , whereby an opening of the composite substrate 1 is first necessary, wherein the edges provided with the metal surfaces 3 ′′ and 3 ′′′ and 4 ′′ and 4 ′′′ are broken off, along the outer predetermined break lines 7 or 8 .
- This opening is possible only in a certain sequence, wherein first the outer edges possessing the metal surfaces 3 ′′ and 4 ′′ and then the outer edges possessing the metal surfaces 3 ′′′ and 4 ′′′ are broken off.
- the metal surfaces 3 ′′, 4 ′′ and 3 ′′′, 4 ′′′ which bridge especially the predetermined break line 7 and 8 extending between the metal surfaces 3 ′, unintentional breakage of the composite substrate 1 is effectively prevented.
- FIG. 3 shows a partial cross-section through the composite substrate of FIG. 1 .
- SE in this figure designates the planes extending perpendicular to the XY plane that enclose the predetermined break lines 7 or 8 .
- all metal surfaces 4 ′ of these middle planes SE have a distance d 1 .
- the edges of all metal surfaces 3 ′, 3 ′′ and 3 ′′′ have a distance of d 2 from the adjacent plane SE extending parallel to the respective edge. This applies both for the planes SE that are parallel to the XZ plane and parallel to the YZ plane.
- the thickness of the metalization 3 and 4 is, for example, 0.15-1.0 mm.
- the respective distance d 2 is greater or equal to d 1 , whereby d 1 , for example, is on the order of 1.0 to 0.05 mm.
- the distances d 2 are greater than 1 mm.
- the predetermined break lines 7 and 8 are produced, for example, by laser processing, e.g. by laser etching.
- the predetermined break lines 7 and 8 can, however, also be produced by some other means, e.g. by means of mechanical processing.
- the metal surfaces 4 ′ on the bottom side are provided with a reduction along their edges (edge reduction), generally designated by 10 in FIG. 3 .
- This edge reduction 10 can, as described in more detail below, be achieved in a variety of ways, but is in any case formed in such a way that in the area of this edge reduction 10 the metal volume or the metal mass per volume unit is reduced.
- the width of the edge reduction is designated by a in FIG. 4 and is, for example, on the order of 0.2 to 6 mm.
- the reduction of the metal mass or the metal volume is such that the metal mass on the edge reduction 10 is only about 10 to 80% of the metal mass of a metal surface 4 ′ without edge reduction, with reference to a specific volume unit.
- the edge reduction 10 is also provided for on the metal surfaces 4 ′′ and 4 ′′′, along the edges adjacent to the predetermined break lines 7 and 8 , i.e. along the planes SE.
- FIGS. 6-15 show examples of various possibilities for forming the edge reduction 10 .
- FIG. 5 depicts an edge reduction 10 a that is formed by beveling of the edges of the metal surfaces 4 ′, 4 ′′, 4 ′′′ adjacent to the planes SE, whereby the diagonal edge surface 11 formed here is in an angle á that is smaller than 45°.
- FIGS. 6 and 7 show an edge reduction 10 b wherein rows of hole-like depressions 12 are formed along the edges of the metal surfaces 4 ′, 4 ′′, 4 ′′′ adjacent to the planes SE, whereby these depressions 12 extend to the bottom side of the ceramic layer 2 and have a diameter, for example, of approximately 0.4 to 0.5 mm.
- the depressions 12 form a simple row of holes in this embodiment. In a possible embodiment, the depressions 12 have a diameter of approximately 0.5 mm.
- the width a of the edge reduction 10 b within which (width) also the depressions 12 are located, is, for example 0.8 mm, with a distance d 1 of approximately 0.5 mm.
- the width a is hereby defined such that a is the maximum distance that the edges of the depressions 12 have from the adjacent edge of the metalization.
- FIG. 8 shows a possible embodiment in which the edge reduction 10 c is formed by the outer depressions 12 , i.e. directly adjacent to the edges of the respective metalization 4 ′, 4 ′′, 4 ′′′ and additional inner depressions 13 .
- the latter are offset in relation to the depressions 12 and form, in addition to the outer row of holes (depressions 12 ) an inner row of holes (depressions 13 ), whereby both the depressions 12 and the depressions 13 extend to the bottom side of the ceramic layer 2 .
- the diameter of the depressions 13 in this embodiment is smaller than the diameter of the depressions 12 .
- the width a of the edge reduction 10 c within which (width a) all depressions 12 and 13 are located, is approximately 1.4 mm, whereby the diameter of the outer depressions is approximately 0.6 mm and that of the inner depressions approximately 0.4 mm.
- the width a is hereby defined such that a is the maximum distance that edges of the depressions 13 have from the adjacent edge of the metalization.
- FIG. 9 shows as a further possibility for an edge reduction 10 d wherein the edges of the metal surfaces 4 ′, 4 ′′ and 4 ′′′ adjacent to the planes SE are provided with depressions 14 that are open toward these edges, resulting in meandering edges.
- the depressions 14 extend likewise to the bottom side of the ceramic layer 2 .
- edge reductions 10 b - 10 d it is also possible to design all or only some of the depressions 12 , 13 or 14 such that they do not extend to the bottom side of the ceramic layer 2 , but rather a remainder of the metalization 4 forms the bottom of the respective depression.
- FIGS. 10 and 11 show as a further possibility an edge reduction 10 e that is formed by a graduation 15 of the edges of the metal surfaces 4 ′, 4 ′′, 4 ′′′ adjacent to the planes SE, i.e. within the width a of the edge reduction 10 e the thickness of the material of the respective metal surface increases in steps, for example in the embodiment of FIGS. 9 and 10 in one step. In general, several steps 15 can also be provided for.
- FIGS. 11 and 12 show as a further possible embodiment an edge reduction 10 f wherein the metal surfaces 4 ′, 4 ′′ and 4 ′′′ are each provided with a groove-like depression 16 that extends along the edges of the metal surfaces extending along the planes SE and adjacent to these planes, whereby the depression 16 on the metal surfaces 4 ′ is designed as a self-contained groove.
- edge reductions 10 e and 10 f are depicted also for the metal surfaces 3 ′, 3 ′′ and 3 ′′′ in FIGS. 10-13.
- edge reductions 10 a - 10 f can also be combined, for example on one side of the composite substrate 1 , respectively, or on several sides. Furthermore, edge reductions 10 are provided for only where corresponding metal surfaces 3 ′, 3 ′′, 3 ′′′ or 4 ′, 4 ′′, 4 ′′′ are provided for.
- FIGS. 14 and 15 show as a further possible embodiment similar to FIGS. 1 and 3 a composite substrate la that differs essentially from the composite substrate 1 only in that the metal surfaces 4 ′′ and 4 ′′′ provided for on the edges 5 and 6 are not present, but only the metal surfaces 3 ′′ and 3 ′′′ on the top side of the composite substrate.
- FIG. 16 shows a composite substrate 1 b that corresponds, for example, to the composite substrate 1 or 1 a , but in which the metal surfaces 3 ′ provided for on the top side for the formation of conductors, contact surfaces etc. are textured for the single substrates as schematically depicted in this figure by the numbers 17 , 18 and 19 .
- the textured surface areas 18 components in the form of semiconductor chips 20 are attached that are electrically connected by means of wire bonds to the corresponding textured areas 17 and 18 forming the electric contact surfaces or connections.
- all metal surfaces 3 ′ are textured in this manner and assembled with components, so that a large card or a composite printed board or an assembled composite substrate is produced that is not separated into single substrates or into the individual components or switching circuits until after assembly.
- an edge reduction 10 was provided for on the metal surfaces 4 ′, 4 ′′ or 4 ′′′ (of course, only insofar as these metal surfaces exist) and if applicable also on the metal surfaces 3 ′, 3 ′′ and 3 ′′′ along all edges adjacent to a plane SE.
- FIG. 17 shows in a depiction similar to FIG. 2 as a further possibility a composite substrate 1 c in which edge reductions 10 are provided for only along part of the edges of the metal surfaces 4 ′, 4 ′′ or 4 ′′′ and if applicable also only on part of the edges of the metal surfaces 3 ′, 3 ′′ and 3 ′′′, again of course only if the respective metal surfaces actually exist.
- the embodiment depicted in FIG. 17 is based on the knowledge that random breaks 9 tend to occur when, during separation or breaking of the composite substrate into single substrates, the breakage takes place along a predetermined break line 7 or 8 that extends across several single substrates. For example, if the separation of the composite substrate 1 c takes place according to the rule or breaking sequence indicated below, then an edge reduction 10 is not necessary on those edges of the metal surfaces 3 ′ that are adjacent to the predetermined break lines 8 extending between these metal surfaces 3 ′ or the planes SE that enclose the predetermined break line 8 extending between the metal surfaces 4 ′. The same holds true for the metal surfaces 3 ′, insofar as an edge reduction is necessary or desirable on these.
- edges of the metal surfaces 4 ′, 4 ′′, 4 ′′′ that are provided with an edge reduction 10 are also cross-hatched.
- the edges that do not have an edge reduction 10 are depicted as a straight line.
- the metal surfaces 4 ′ are not provided with the edge reduction 10 on an edge that is adjacent to a group of predetermined break lines extending between these metal surfaces, namely the predetermined break lines 8 extending in the Y-axis, but on all other edge areas.
- breaking sequence i.e. after breaking off the outer edges possessing the metal surfaces 3 ′′ or 4 ′′ and 4 ′′′ or 4 ′′′ to first produce strips of single substrates by breaking along the predetermined break lines 8 and then to break these along the predetermined break lines 7 .
- edge reductions 10 are in any case also necessary along the predetermined break lines 8 extending between the single substrates, while edge reductions along the predetermined break lines 7 extending between the single substrates are not necessary.
- the breaking should always take place on predetermined break lines that are as short as possible, i.e. in a rectangular embodiment of the composite substrate with the longer side in the direction of the Y-axis and the shorter side in the X-axis, the breaking into strips necessarily takes place along the shorter predetermined break lines 8 .
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Abstract
Description
List of |
1, 1a, 1b, 1c | |
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2 | |
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3, 4 | |
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3′, 3′ ′, 3′ ′ ′ | |
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4′, 4′ ′, 4′ ′ ′ | |
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5, 6 | |
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7, 8 | |
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9 | |
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10, 10a, 10b, 10c, | edge reduction | ||
10d, 10e, 10f | |||
11 | beveling or |
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12, 13, 14 | |
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15 | |
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16 | |
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17, 18, 19 | |
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20 | Component | ||
Claims (25)
Applications Claiming Priority (2)
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DE19927046 | 1999-06-14 | ||
DE19927046A DE19927046B4 (en) | 1999-06-14 | 1999-06-14 | Ceramic-metal substrate as a multi-substrate |
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Publication Number | Publication Date |
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US6638592B1 true US6638592B1 (en) | 2003-10-28 |
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Application Number | Title | Priority Date | Filing Date |
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US09/589,149 Expired - Lifetime US6638592B1 (en) | 1999-06-14 | 2000-06-08 | Ceramic/metal substrate, especially composite substrate |
Country Status (3)
Country | Link |
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US (1) | US6638592B1 (en) |
EP (1) | EP1061783B2 (en) |
DE (1) | DE19927046B4 (en) |
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Also Published As
Publication number | Publication date |
---|---|
EP1061783B2 (en) | 2019-12-25 |
EP1061783B1 (en) | 2013-11-20 |
EP1061783A2 (en) | 2000-12-20 |
EP1061783A3 (en) | 2005-11-30 |
DE19927046B4 (en) | 2007-01-25 |
DE19927046A1 (en) | 2000-12-28 |
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