DE102022122799A1 - Electronic module and method for producing such an electronic module - Google Patents

Abstract

Electronic module (100), in particular power electronics module, comprising- a metal-ceramic substrate (1) serving as a carrier with a ceramic element (10) and a primary component metallization (21) and preferably with a cooling side metallization (20),- an insulating layer (40) , which is connected directly or indirectly to the primary component metallization (21), and - a secondary component metallization (22), which is connected to the side of the insulating layer (40) facing away from the ceramic element (10) and in particular from the primary component metallization (21) is insulated by the insulation layer (40), the ceramic element (10) having a first size (L, D) and the insulation layer (40) having a second size (L1, D1) and wherein to form an island-like insulation layer (40) on the primary component metallization (21) a ratio of the second size (L1, ID1) to the first size (L, D) assumes a value that is less than 0.4, preferably less than 0.22 and particularly preferably less than 0.15 or is even smaller than 0.1 and, viewed in a direction perpendicular to the main extension plane (HSE), an outside (A) of the secondary component metallization (22) and an outside (A) of the first component metallization (21) essentially end at a common height.

Description

The present invention relates to an electronic module and a method for producing an electronic module.

Electronic modules, in particular from power electronics, are known from the prior art, in which metal-ceramic substrates serve as circuit boards. Metal-ceramic substrates are, for example, well known as printed circuit boards or circuit boards from the prior art, for example from DE 10 2013 104 739 A1 , the DE 19 927 046 B4 and the DE 10 2009 033 029 A1 . Typically, connecting surfaces for electrical components and conductor tracks are arranged on one component side of the metal-ceramic substrate, the electrical components and the conductor tracks being able to be connected together to form electrical circuits. Essential components of the metal-ceramic substrates are an insulation layer, which is preferably made of a ceramic, and at least one metal layer bonded to the insulation layer. Because of their comparatively high insulation strength, insulation layers made of ceramic have proven to be particularly advantageous in power electronics. By structuring the metal layer, conductor tracks and/or connection surfaces for the electrical components can then be realized.

From the DE 102 27 658 A1 an electronic module is known that has a further insulation layer made of a glass-containing material. The metal sections connected to the further insulation layer protrude from the remaining metal sections. An example of an island-like use of an additional insulation layer is also from the WO 2021 180 639 A1 known.

From the EP 3 252 810 A1 and the DE 10 2012 206 276 A1 Other electronic modules are known in which height-offset insulation layers are provided. Here the two insulation layers extend almost over the entire area of the entire electronic module.

In the examples mentioned above, compactness of the substrate, thermal resistance and low-inductance current conduction can only be improved at the expense of one of the variables mentioned.

Based on this, the present invention sets itself the task of providing an electronic module that allows compactness, thermal resistance and current conduction to be optimized without any of the variables being significantly worsened.

The object is achieved by an electronic module according to claim 1 and by a method according to claim 10. Further advantages and properties result from the subclaims as well as the description and the attached figures.

• - ein als Träger dienendes Metall-Keramik-Substrat mit einem Keramikelement und einer primären Bauteilmetallisierung und vorzugsweise mit einer Kühlseitenmetallisierung,
• - eine Isolationsschicht, die unmittelbar oder mittelbar an die primäre Bauteilmetallisierung angebunden ist, und
• - eine sekundäre Bauteilmetallisierung, die an der dem Keramikelement abgewandten Seite der Isolationsschicht angebunden ist und insbesondere von der primären Bauteilmetallisierung durch die Isolationsschicht isoliert ist,

wobei das Keramikelement eine erste Größe und die Isolationsschicht eine zweite Größe aufweist und wobei zur Ausbildung einer inselartigen Isolationsschicht auf der primären Bauteilmetallisierung ein Verhältnis der zweiten Größe zu der ersten Größe einen Wert annimmt, der kleiner als 0,4, bevorzugt kleiner als 0,22 und besonders bevorzugt kleiner als 0,15 oder sogar kleiner als 0,1 ist,
wobei in einer senkrecht zur Haupterstreckungsebene verlaufenden Richtung gesehen eine Außenseite der sekundären Bauteilmetallisierung und eine Außenseite der ersten Bauteilmetallisierung im Wesentlichen auf einer gemeinsamen Höhe abschließen,
wobei die primäre Bauteilmetallisierung im Wesentlichen der Anbindung von Elektronikbauteilen, insbesondere von Leistungselektronikbauteilen und besonders bevorzugt von aktiven elektrischen Bauteilen, und die sekundäre Bauteilmetallisierung im Wesentlichen als Leiterbahn zur Signalführung und/oder zur Führung eines Laststroms dient.According to a first aspect, an electronics module, in particular a power electronics module, is provided, comprising

• - a metal-ceramic substrate serving as a carrier with a ceramic element and a primary component metallization and preferably with a cooling side metallization,
• - an insulation layer that is directly or indirectly connected to the primary component metallization, and
• - a secondary component metallization, which is connected to the side of the insulating layer facing away from the ceramic element and is in particular insulated from the primary component metallization by the insulating layer,

wherein the ceramic element has a first size and the insulation layer has a second size and wherein, in order to form an island-like insulation layer on the primary component metallization, a ratio of the second size to the first size assumes a value that is less than 0.4, preferably less than 0.22 and particularly preferably less than 0.15 or even less than 0.1,
wherein, viewed in a direction perpendicular to the main extension plane, an outside of the secondary component metallization and an outside of the first component metallization essentially end at a common height,
wherein the primary component metallization essentially serves to connect electronic components, in particular power electronic components and particularly preferably active electrical components, and the secondary component metallization essentially serves as a conductor track for signal routing and/or for guiding a load current.

In contrast to the prior art, the present invention provides that the secondary component metallization, which is arranged on the insulation layer, is essentially used for signal transmission or for carrying a load current, while the electrical components, in particular high-performance components, are arranged on the primary component metallization or are connected. This proves to be particularly advantageous because it can ensure that no insulation layer is arranged between the electronic component and the ceramic element, which would otherwise increase the thermal resistance. However, this would be the case if the Isola tion layer would extend over the entire surface, in particular below the electrical component, since the heat emanating from the electrical component would have to pass through both the insulation layer and the ceramic element.

Therefore, by using the secondary component metallization for signals, the thermal resistance of the entire electronic module is optimized, which means that maximum output power of the system can also be used. At the same time, the compactness of the electronic module is increased since the secondary component metallizations are provided for signal routing and/or for guiding a load current in the area in which the primary component metallization is already arranged. It is therefore possible to introduce a further wiring level, whereby the functionality per unit area of the electronic module can be increased. At the same time, the common termination of the outside at the common height ensures that the equipping with semiconductors is favored and, in particular, that there are no protruding levels or metallizations that would contradict the compactness of the electronic module.

In particular, the secondary component metallization serves as a conductor track for signal routing and/or for guiding a load current. In particular, the secondary component metallization is free of power electronic components or high-performance electronic components. The secondary component metallization is particularly preferably free of active electrical components. A power electronics component and/or a high-performance electronics component is to be understood in particular as one that includes at least one active component and/or is part of a load circuit. In particular, these are electrical components whose power loss is greater than 20 W, preferably greater than 50 W and particularly preferably greater than 100 W. Examples of such power electronic components are transistors and diodes, FETs, semiconductor components and/or high-current diodes. In particular, “essentially” in the context here means that the primary component metallization is not only intended exclusively for connecting electronic components. However, if electrical components, in particular high-performance components, are provided, they are arranged on a part of the primary component metallization. The same applies to the secondary component metallization. It is intended here that the secondary component metallization is essentially free of power electronics and/or high-performance electronics.

If the secondary component metallization is a conductor track that is used to guide a load current, it proves to be particularly advantageous to let the currents in the first component metallization and the second component metallization run anti-parallel, since in this way a corresponding compensation is achieved is particularly effective due to oppositely directed inductive effects. In this case, the second component metallization leads to a load current that is at least 20 A, preferably at least 50 A and particularly preferably greater than 100 A. Furthermore, it is conceivable that a distance between the first component metallization and the second component metallization is smaller than 10 mm, preferably smaller than 5 mm and particularly preferably smaller than 2.5 mm, in particular measured along a direction running parallel to the main extension plane.

The first size and/or the second size are understood to mean the respective volumes of the insulation layer and/or the ceramic element. This first size or the second size therefore includes both a surface extent of the island-like insulation layer or the ceramic element, measured in a plane running parallel to the main extension plane, and its thickness, measured along a direction running perpendicular to the main extension plane. The island-like design of the insulation layer thus enables large areas to remain free of the island-like insulation layer, which can be used to connect primary component metallization of electronic components to the primary component metallization. This advantageously prevents the thermal resistance in the local areas of the electronic components from being increased accordingly. However, this regularly occurs when the insulation layer extends over large parts of the primary component metallization.

It is preferably provided that the secondary component metallization is used to carry load current, in particular to realize DC+ and/or DC lines. Furthermore, it is preferably provided that the secondary component metallization is used as gate lines. In particular, when using the secondary component metallization as a signal routing line or for guiding a load current, it is possible to dimension it smaller, in particular thinner, than the primary component metallization, which is also provided for heat conduction of the thermal energy emanating from the electrical components and is subject to heat spread. This means it is still possible to design a common outside area that ends at a common height. At the same time, the area of the primary component metallization, which is arranged below the electrical component, thicker, especially thicker than the secondary component metallization. The electronic module, in particular the secondary component metallization, is contacted accordingly to form signal routing or to conduct a load current or provides corresponding areas or connection surfaces so that signal currents can flow through the secondary component metallization.

An island-like insulation layer is preferably provided, with which in particular electrical insulation is achieved between the primary component metallization and the secondary component metallization. As a result, one is no longer necessarily dependent on the formation of electrical lines or conductor tracks as part of structuring the primary component metallization, but rather can use the insulation layer to arrange various electrical components or electrically insulating them from one another or to set up targeted connections without having to structure the primary ones Component metallization is absolutely necessary. The insulation layer is preferably connected directly to the primary component metallization.

Alternatively, it is conceivable that, for example, the insulation layer is part of a further, in particular smaller, metal-ceramic substrate, which in turn is placed on the larger metal-ceramic substrate serving as a carrier and is attached as part of a DCB or active soldering process or by means of adhesive the metal-ceramic substrate is connected. In particular, the insulation layer is a comparatively thin insulation layer made of ceramic, which contributes to the electrical isolation of the secondary component metallization from the primary component metallization. In particular, it is provided that the electronic module or the arrangement of the primary component metallization and the secondary component metallization is not completely embedded in an encapsulation or a housing. Preferably, the insulation layer is surrounded on all sides by the primary component metallization in a plane running parallel to the main extension plane. Alternatively, it is also conceivable that the insulation layer is arranged at the edge of the primary component metallization, so that the insulation layer is surrounded by the primary component metallization on at most three or two sides in a plane running parallel to the main extension plane.

Furthermore, it is provided that the primary or secondary component metallization and/or the cooling side metallization is directly and directly connected to the insulation layer or the ceramic element, for example connected by means of a DCB process, an AMB process, a hot isostatic pressing, a diffusion bonding process, by means of Thick-film technology or using thin-film technology. Furthermore, the metal-ceramic substrate or the further metal-ceramic substrate comprises at least one metal layer, for example as part of the cooling side metallization or the primary or secondary component metallization, which is bonded to an outside of the ceramic element or the insulation layer, wherein the metal layer and the ceramic element extend along a main extension plane and are arranged one above the other along a stacking direction running perpendicular to the main extension plane. As materials for the metallization or the metal sections, i.e. H. For the primary component metallization, the secondary component metallization, the cooling side metallization and/or a back side metallization, copper, aluminum, molybdenum and/or their alloys, as well as laminates such as CuW, CuMo, CuAl, AlCu and/or CuCu are conceivable, in particular a copper sandwich structure a first copper layer and a second copper layer, wherein a grain size in the first copper layer differs from a second copper layer. Furthermore, it is preferably provided that the at least one metallization, i.e. H. the primary component metallization or secondary component metallization is surface modified. Possible surface modifications include, for example, sealing with a precious metal, in particular silver and/or gold, or ENIG ("electroless nickel immersion gold") or edge casting on the first or second metallization layer to suppress crack formation or widening.

Preferably, the ceramic element and/or the insulation layer comprises at least one ceramic layer, wherein the ceramic layer is Al ₂ O ₃ , Si ₃ N ₄ , AlN, a HPSX ceramic (ie a ceramic with an Al ₂ O ₃ matrix which has an x percent Proportion of ZrO ₂ includes, for example Al ₂ O ₃ with 9% ZrO ₂ = HPS9 or Al ₂ O ₃ with 25% ZrO ₂ = HPS25), SiC, BeO, MgO, high density MgO (> 90% of theoretical density), TSZ (tetragonally stabilized zirconium oxide) or ZTA. It is also conceivable that the insulation layer or the ceramic element is designed as a composite or hybrid ceramic, in which several ceramic layers, each of which differ in terms of their material composition, are arranged one above the other and joined together to form an insulation layer in order to combine various desired properties . Preferably, a ceramic that is as thermally conductive as possible is used for the lowest possible thermal resistance. It is also conceivable that a metallic intermediate layer is arranged in the ceramic element or in the insulation layer between two ceramic layers.

The electrical component is preferably a switchable component or active or passive construction part. This is preferably a WBG semiconductor (wide bandgap semiconductors), such as. B. a semiconductor made of silicon carbide, gallium nitride and / or indium gallium nitride. Examples of an electronic component are MOSFETs (“metal-oxide-semiconductor field-effect transistor”) or IGBTs (“insulated-gate bipolar transistor”).

According to an advantageous embodiment, it is provided that the primary component metallization is structured to form a first metal section and a second metal section in such a way that the first metal section and the second metal section are electrically insulated from one another, with the outside of the, viewed in a direction perpendicular to the main extension plane secondary component metallization in the first metal section and the outside of the primary component metallization in the second metal section essentially ends at a common height.

It is preferably provided that the entire outside on the component side ends at a common height, regardless of whether it is the first or second metal section, but in particular also regardless of whether it is the primary component metallization or secondary component metallization. Due to the electrical insulation between the first metal section and the second metal section, the first and second metal sections can be used completely independently of one another, whereby the complexity of the circuit board can be increased in an advantageous manner, particularly with regard to compact functionality per unit area of the electronic module.

In particular, it is provided that the outside of the primary component metallization in the first metal section ends at a common height with the outside of the secondary component metallization in the first metal section. This makes it possible in an advantageous manner to realize a direct connection between the primary component metallization and the secondary component metallization in the first metal section, in particular by using corresponding cross lines. The common height at which the primary component metallization and the secondary component metallization terminate simplifies the implementation of such connections, in particular the connection option using wire bonding processes.

Furthermore, it is preferably provided that the primary component metallization, in particular a maximum thickness assigned to the primary component metallization, essentially corresponds to the thickness that is assigned to the cooling side metallization. Furthermore, it is preferably provided that the insulation layer is arranged in a recess and/or a recessed course of the primary component metallization. In other words, the insulation layer with the secondary component metallization is sunk into the primary component metallization in order to provide a correspondingly compact design.

Alternatively or additionally, it is conceivable that the primary component metallization forms a base-like projection on which an insulating layer is arranged, which projects in particular relative to the base-like projection in a direction that runs parallel to the main extension plane. As a result, the corresponding secondary component metallization and primary component metallization can be optimally adapted to the respective application, in particular also taking into account the electrical insulation between the primary component metallization and secondary component metallization.

It is preferably provided that the primary component metallization contacts the insulation layer on at least two sides, preferably at least three sides, particularly preferably on at least four sides. Preferably, a cohesive connection is created. In particular, the primary component metallization contacts the insulation layer on the first side, the second side, the third side and the fourth side. The first side and the fourth side are substantially parallel to the main extension plane and are arranged opposite one another along a direction that is perpendicular to the main extension plane.

The third side and second side run essentially perpendicular to the main extension plane and connect the first and fourth sides of the insulation layer. By covering or contacting the first, second, third and fourth sides, it is advantageously possible to embed the insulation layer in the primary component metallization, whereby an additional positive connection is formed between the primary component metallization and the insulation layer, which is advantageous for the longevity and electrical insulation in the electronic component has been proven. It is preferably provided that the first and/or fourth side of the insulation layer is at least partially free of contact with the primary component metallization. As a result, the electrical insulation between the secondary component metallization and primary component metallization can be adapted to the need, in particular a required pullback.

It is preferably provided that the electronic module has a further insulation layer points. This makes it advantageously possible to insert additional wiring levels into the electronic module in a space-saving manner, whereby the functionality per unit area of the electronic module can be further increased. In particular, it is provided that the insulation layer and the further insulation layer are arranged at a height offset from one another in a direction perpendicular to the main extension plane. Taking into account that the outside of the secondary component metallization is at the same height as the outside of the primary component metallization, the formation of the insulation layer and the further insulation layer at different heights has the advantage that the first thickness and second thickness of the secondary component metallization and/or the further Secondary component metallization can be adapted to the respective needs and space requirements. For example, it is thereby possible to achieve larger first thicknesses of the secondary component metallization by means of a smaller first height, whereby the width of these lines, in particular of the secondary component metallization, can be kept smaller, i.e. narrower, along a direction running parallel to the main extension direction, with the same ability to carry current can be trained. This further optimizes flexibility with regard to the respective application and further increases the freedom of design when designing the circuit board.

Furthermore, it is preferably provided that the insulation layer has a first insulation layer thickness and the further insulation layer has a second insulation layer thickness, the first insulation layer thickness and the second insulation layer thickness being different. This makes it possible in an advantageous manner to adapt the insulation capacity of the insulation layer to the respective need and, in particular, to increase or reduce it depending on need. In principle, it is preferably provided that the first insulation layer thickness and/or the second insulation layer thickness is smaller than the insulation layer thickness of the ceramic element.

Furthermore, it is preferably provided that the secondary component metallization has a first thickness that is dimensioned perpendicular to the main extension plane and is greater than 150 μm. Due to a correspondingly comparatively large first thickness of the secondary component metallization, it is advantageously possible to conduct even high currents via the secondary component metallization for signal routing or for guiding a load current. This is usually not possible if the first thickness is less than 150 µm.

Preferably, it is provided that the insulation layer has a cross section that deviates from a rectangle in a plane running parallel to the main extension plane. The insulation layer can be strip-shaped or have an elliptical, circular, diamond-shaped and/or square cross-section. In particular, it is possible, through appropriate design freedom of the insulation layer, to place the insulation behavior and/or free areas of the insulation layer in such a way that they are adapted, for example, to the intended space for the power electronics component and/or the high-performance electronics component.

It is preferably provided that the secondary component metallization is structured. It is particularly preferred if the secondary component metallization is structured to form conductor tracks that run parallel to one another at least in sections. In particular, this makes it possible to cause currents in opposite directions through the conductor tracks that run parallel to one another, which result in inductive effects being mutually compensated for. This makes it advantageously possible to reduce or eliminate parasitic inductive effects, at least in some sections.

It is preferably provided that the primary component metallization, secondary component metallization and the insulation element or the ceramic element extend along a main extension plane and are arranged one above the other along a stacking direction running perpendicular to the main extension plane, with a bonding layer in the manufactured carrier substrate between the primary component metallization or the secondary and the Insulating element or ceramic element is formed, wherein an adhesion promoter layer of the bonding layer has a surface resistance that is greater than 5 ohms/sq, preferably greater than 10 ohms/sq and particularly preferably greater than 20 ohms/sq.

It has been found that as the proportion of active metal increases, the formation of brittle, intermetallic phases is promoted, which in turn is disadvantageous for the peel strength of the metal layer on the insulation layer. In other words: The surface resistances according to the claims describe those bonding layers whose peel strength is improved, ie increased, due to the reduced formation of brittle intermetallic phases. By specifically adjusting the surface resistances as claimed, particularly strong connections between the at least one metal layer and the ceramic element can be achieved. Such an increased Bond strength has an advantageous effect on the service life of the carrier substrate.

To determine the surface resistance, it is provided that the metal layer and, if necessary, a solder base layer are first removed from the manufactured carrier substrate, for example by etching. Using a four-point measurement, a surface resistance is then measured on the top or bottom of the carrier substrate freed from the at least one metal layer and the solder base layer. In particular, the surface resistance of a material sample is to be understood as its resistance based on a square surface area. It is common practice to mark the surface resistance with the unit Ohm/sq(square). The physical unit of surface resistance is ohm.

A further aspect of the present invention is a method for producing the electronic module according to the invention, wherein to form the primary component metallization a metal layer or metal layer is attached to the ceramic element and to form the secondary component metallization a further metal layer or further metal layer is attached to the insulating layer, preferably in a common manner Process step, in particular by hot isostatic pressing, is connected. For this purpose, it is preferably provided that the individual components are first stacked and then joined in a common bonding step. The manufactured metal-ceramic substrate is then further processed, for example separated, structured and/or surface refined. Alternatively, it is also conceivable that the metal-ceramic substrate is successively assembled. All properties and advantages that have been described in connection with the electronic module apply analogously to the process and vice versa.

In particular, it is provided that the metal layer/metal layer or the further metal layer/metal layer is connected to the insulation element/the insulation layer or ceramic element by means of an active soldering process and/or a hot isostatic pressing and/or a DCB process.

• - Bereitstellen einer Lötschicht, insbesondere in Form mindestens einer Lötfolie bzw. Hartlotfolie,
• - Beschichten des Isolationselements, das im gefertigten Elektronikmodul das Keramikelement bildet, und/oder der mindestens einen Metallschicht und/oder der mindestens einen Lötschicht mit mindestens einer Aktivmetallschicht, vorzugsweise einer separaten Aktivmetallschicht, beispielsweise in Form einer Folie,
• - Anordnen der mindestens einen Lötschicht zwischen dem Isolationselement und der mindestens einen Metallschicht entlang einer Stapelrichtung unter Ausbildung eines Lötsystems, das die mindestens eine Lötschicht und die mindestens eine Aktivmetallschicht umfasst, wobei ein Lotmaterial der mindestens einen Lötschicht vorzugsweise frei von einem schmelzpunkterniedrigenden Material bzw. von einem phosphorfreien Material ist, und
• - Anbinden der mindestens einen Metallschicht an die mindestens eine Keramikschicht über das Lötsystem mittels eines Aktivlotverfahrens. Die mindestens eine Metallschicht bildet dann die primäre Bauteilmetallisierung. Vorzugsweise ist es vorgesehen, dass eine weitere Metallschicht auf einer Isolationsschicht angeordnet ist und mittels des beschriebenen Lötverfahrens angebunden wird. Die weitere Metallschicht bildet dann die sekundäre Bauteilmetallisierung. Vorzugsweise erfolgt ein Stapeln des Keramikelements, der Metallschicht, der Isolationsschicht und der weiteren Metallschicht, wobei nach dem Stapeln in einem gemeinsamen Bondverfahren die gewünschten Bindung zwischen den Lagen zur Bildung des Elektronikmoduls realisiert werden. Dabei ist es bevorzugt vorgesehen, dass als Aktivmetall Titan (Ti), Zirkonium (Zr), Hafnium (Hf), Chrom (Cr), Niob (Nb), Cer (Ce), Tantal (Ta), Magnesium (Mg), Lanthan (La) und Vanadium (V), Molybdän (Mo) oder Wolfram (W) genutzt wird, und bevorzugt das Lotmaterial ein Lotbasismaterial ist, wobei das Lotbasismaterial einen Anteil an Aktivmetall von weniger als 1,5 Gew. %, bevorzugt weniger als 1,0 Gew. % und besonders bevorzugt weniger als 0,5 Gew. - % aufweist.

For example, it is envisaged that a method for producing a metal-ceramic substrate is provided, comprising:

• - Providing a soldering layer, in particular in the form of at least one soldering foil or brazing foil,
• - Coating the insulation element, which forms the ceramic element in the manufactured electronic module, and/or the at least one metal layer and/or the at least one soldering layer with at least one active metal layer, preferably a separate active metal layer, for example in the form of a film,
• - Arranging the at least one soldering layer between the insulation element and the at least one metal layer along a stacking direction to form a soldering system which comprises the at least one soldering layer and the at least one active metal layer, wherein a soldering material of the at least one soldering layer is preferably free of a melting point-lowering material or of a phosphorus-free material, and
• - Connecting the at least one metal layer to the at least one ceramic layer via the soldering system using an active soldering process. The at least one metal layer then forms the primary component metallization. It is preferably provided that a further metal layer is arranged on an insulation layer and is connected using the soldering method described. The further metal layer then forms the secondary component metallization. Preferably, the ceramic element, the metal layer, the insulation layer and the further metal layer are stacked, with the desired bonding between the layers to form the electronic module being realized after stacking in a common bonding process. It is preferably provided that the active metal is titanium (Ti), zirconium (Zr), hafnium (Hf), chromium (Cr), niobium (Nb), cerium (Ce), tantalum (Ta), magnesium (Mg), lanthanum (La) and vanadium (V), molybdenum (Mo) or tungsten (W) is used, and preferably the solder material is a solder base material, the solder base material having an active metal content of less than 1.5% by weight, preferably less than 1 .0% by weight and particularly preferably less than 0.5% by weight.

In particular, a multilayer soldering system made of at least one solder layer, preferably free of elements that lower the melting point, particularly preferably made of a phosphorus-free solder layer, and at least one active metal layer is provided. The separation of the at least one active metal layer and the at least one solder layer proves to be particularly advantageous because comparatively thin solder layers can be achieved, especially if the solder layer is a foil. Otherwise, comparatively large solder layer thicknesses must be realized for soldering materials containing active metals because of the brittle intermetallic phases or the high modulus of elasticity and high yield strength of the common active metals and their intermetallic phases, which hinder the forming of the solder paste or solder layer. whereby the minimum layer thickness is limited by the manufacturing properties of the active metal-containing soldering material. Accordingly, for solder layers containing active metal, it is not the minimum thickness required for the joining process that determines the minimum solder layer thickness of the solder layer, but rather the minimum layer thickness of the solder layer that is technically feasible determines the minimum solder layer thickness of the solder layer. This means that this thicker, active metal-containing solder layer is more expensive than thin layers. By phosphorus-free, the person skilled in the art means in particular that the proportion of phosphorus in the solder layer is less than 150 ppm, less than 100 ppm and particularly preferably less than 50 ppm.

Preferably, the solder layer, in particular the phosphorus-free solder layer, comprises several materials in addition to the pure metal. For example, indium is a component of the solder material used in the solder layer.

Furthermore, it is conceivable that the solder material to form the solder layer is applied to the active metal layer and/or the at least one metal layer by physical and/or chemical vapor deposition and/or galvanically. This makes it possible in an advantageous manner to realize comparatively thin solder layers in the soldering system, in particular in a homogeneous distribution.

• - Bereitstellen des Keramikelements und einer Metalllage, die im späteren Elektronikmodul als primäre Bauteilmetallisierung dient,
• - Bereitstellen eines gasdichten Behälters, der das Keramikelement umschließt, wobei der Behälter vorzugsweise aus der Metalllage geformt ist oder die Metalllage umfasst,
• - Ausbilden des Metall-Keramik-Substrats durch ein Anbinden der Metalllage an das Keramikelement mittels heißisostatischen Pressen,

wobei zum Ausbilden des Metall-Keramik-Substrats zwischen dem der Metalllage und dem Keramikelement mindestens abschnittsweise eine Aktivmetallschicht oder eine ein Aktivmetall umfassende Kontaktschicht, zur Unterstützung des Anbindens der Metalllage an das Keramikelement, angeordnet wird. Der Behälter wird dabei vorzugsweise als Metallbehälter aus einer Metalllage und/oder einer weiteren Metalllage gebildet. Alternativ ist es auch vorstellbar, dass ein Glasbehälter verwendet wird. Dabei bildet die Metalllage mit Vorteil die spätere primäre Bauteilmetallisierung. Bevorzugt wird eine weitere Metalllage bereitgestellt, um die spätere sekundäre Bauteilmetallisierung zu realisieren, wobei die weitere Metallage auf einer Isolationschicht angeordnet ist, die wiederum auf der Metalllage angeordnet ist.When producing the electronic module, in particular the metal-ceramic substrate, the following steps are particularly preferably provided for the bonding process, comprising:

• - Providing the ceramic element and a metal layer, which serves as the primary component metallization in the later electronic module,
• - Providing a gas-tight container which encloses the ceramic element, the container preferably being formed from the metal layer or comprising the metal layer,
• - Forming the metal-ceramic substrate by bonding the metal layer to the ceramic element using hot isostatic presses,

wherein to form the metal-ceramic substrate between the metal layer and the ceramic element, an active metal layer or a contact layer comprising an active metal is arranged at least in sections to support the bonding of the metal layer to the ceramic element. The container is preferably formed as a metal container from a metal layer and/or a further metal layer. Alternatively, it is also conceivable that a glass container is used. The metal layer advantageously forms the later primary component metallization. A further metal layer is preferably provided in order to realize the later secondary component metallization, with the further metal layer being arranged on an insulation layer, which in turn is arranged on the metal layer.

The use of hot isostatic pressing is advantageous because several metal layers, especially with different thicknesses, are joined together to form an electronic module. Layers, such as the metal layer or metal layer, are preferably provided as a mold-etched part or stamped part. For example, it is possible to create a metal layer with a recess by then introducing the insulation layer for connecting the further metal layer or metal layer. The individual layers, in particular the further metal layer or metal layer, are then arranged and positioned. It is particularly advantageous that the outer sides end at a common height. This is particularly suitable for the use of hot isostatic pressing, as a uniform pressure effect can then be ensured during production.

Another advantage is that no solder or joining materials occur between the individual metal layers/layers. This advantageously simplifies the etching process for producing the layout. In addition, the missing solder or joining materials cannot act as thermal barriers, which would otherwise adversely affect the thermal properties of the electronic module.

Preferably, a proportion of active metal in the adhesion promoter layer comprising an active metal or the active metal layer is greater than 15% by weight, preferably greater than 20% by weight.

In hot isostatic pressing, it is in particular provided that the bonding is carried out by heating under pressure, in which the first and/or second metal layer of the metal container, in particular the later metal layer of the metal-ceramic substrate and any eutectic layer occurring there, do not enter the melting phase transgresses. Correspondingly, lower temperatures are required for hot isostatic pressing than for a direct metal bonding process, in particular a DCB process.

In comparison to the connection of a metal layer to a ceramic layer using a solder material, in which temperatures below the melting temperature of the at least one metal layer are usually used, in the present procedure a solder base material can advantageously be dispensed with and only an active metal is required. The use or use of pressure in hot isostatic Pressing also proves to be advantageous because it allows air pockets or cavities between the first metal layer and/or the second metal layer on the one hand and the ceramic element on the other hand to be reduced, thereby reducing the frequency of the formation of voids in the formed or manufactured metal-ceramic element. Substrate can be reduced or even avoided. This has an advantageous effect on the quality of the bond between the metal layer or the first and/or second metal layer of the metal container and the ceramic element. In addition, it is advantageously possible to simplify the “second etching” and to avoid solder residue and silver migration.

It is also conceivable that during hot isostatic pressing an additional solder material is introduced between the ceramic element and the at least one metal layer, whereby a melting temperature of the additional solder material can be smaller than the temperature at which the hot isostatic pressing is carried out, i.e. H. smaller than the melting temperature of the at least one metal layer.

It is preferably provided that during hot isostatic pressing of the metal container in a heating and pressure device a gas pressure between 100 and 2000 bar, preferably between 150 and 1200 bar and particularly preferably between 300 and 1000 bar and a process temperature of 300 ° C up to one Melting temperature of the at least one metal layer, in particular up to a temperature below the melting temperature, is exposed. It has advantageously turned out that it is possible to bond a metal layer, ie a first and/or second metal layer of the metal container, to the ceramic element without the required temperatures of a direct metal bonding process, for example a DCB or a DAB process. and/or without a solder base material used in active soldering. In addition, the use or use of an appropriate gas pressure makes it possible to produce a metal-ceramic substrate as free of voids as possible, ie without gas inclusions between the metal layer and the ceramic element. In particular, process parameters are used that are in the DE 2013 113 734 A1 are mentioned and are hereby explicitly referred to.

Following the connection, structuring is preferably carried out, for example by means of etching and/or laser light, and/or separation, for example by separation and/or via a predetermined breaking line.

Further advantages and features result from the following description of preferred embodiments of the object according to the invention with reference to the attached figures. Individual features of the individual embodiments can be combined with one another within the scope of the invention.

• 1: schematisch ein Elektronikmodul gemäß einer ersten beispielhaften Ausführungsform der vorliegenden Erfindung
• 2: schematisch ein Elektronikmodul gemäß einer zweiten beispielhaften Ausführungsform der vorliegenden Erfindung
• 3: schematisch ein Elektronikmodul gemäß einer dritten beispielhaften Ausführungsform der vorliegenden Erfindung
• 4: schematisch ein Elektronikmodul gemäß einer vierten beispielhaften Ausführungsform der vorliegenden Erfindung
• 5: schematisch ein Elektronikmodul gemäß einer fünften beispielhaften Ausführungsform der vorliegenden Erfindung und
• 6: schematisch ein Elektronikmodul gemäß einer sechsten beispielhaften Ausführungsform der vorliegenden Erfindung

It shows:

• 1 : schematically an electronic module according to a first exemplary embodiment of the present invention
• 2 : schematically an electronic module according to a second exemplary embodiment of the present invention
• 3 : schematically an electronic module according to a third exemplary embodiment of the present invention
• 4 : schematically an electronic module according to a fourth exemplary embodiment of the present invention
• 5 : schematically an electronic module according to a fifth exemplary embodiment of the present invention and
• 6 : schematically an electronic module according to a sixth exemplary embodiment of the present invention

In 1 an electronic module 100 is shown schematically according to a first exemplary embodiment of the present invention. Such electronic modules 100, in particular power electronic modules, include a metal-ceramic substrate 1 as a carrier for at least one electrical component (not shown). The metal-ceramic substrate 1 serving as a carrier comprises a ceramic element 10, to which a primary component metallization 21 and a cooling side metallization 20 are connected on opposite sides. Preferably, the primary component metallization 21 and the cooling side metallization 20 are connected to the ceramic element 10 as part of a DAB or DCB process, ie a direct connection process, or as part of an active soldering process or a diffusion bonding process or hot isostatic pressing.

It is preferably provided that the primary component metallization 21 and the cooling side metallization 20 are chosen to be of the same thickness during the connection process, in particular in order to avoid deflection effects that would otherwise occur. This takes advantage of the fact that the forces occurring due to the symmetrical arrangement of the primary component metallization 21 and the cooling side metallization 20 compensate for each other and thus counteract bending.

In the in 1 In the exemplary embodiment shown, the primary component metallization 21 is structured. As a result of the structuring, the primary component metallization 21 has a first metal section 31 and a second metal section 32, which are electrically insulated from one another. Structuring is to be understood as meaning that a free area extending up to the ceramic element 10 is formed between the first metal section 31 and the second metal section 32. Such an open area is also known as isolation ditch 5.

In order to increase the compactness of the electronic module 100, it is provided that a secondary component metallization 22 is formed in addition to the primary component metallization 21. The secondary component metallization 22 is separated from the primary component metallization 22 by an insulating layer 40, in particular electronically insulated. By using the secondary component metallization 22, it is advantageously possible to introduce a further wiring level or line level, for example in the first metal section 31 or in the second metal section 32, whereby the functionality per unit area of the electronic module 100 can advantageously be increased, since in this area both the primary component metallization 21 as well as the secondary component metallization 22 can be used. Otherwise, it would be necessary to arrange the secondary component metallization 22 in a plane running parallel to the main extension plane HSE, laterally offset from the primary component metallization 21 or to introduce a further metal section for this purpose.

In order to further increase the compactness, it is further provided that an outside A of the primary component metallization 21 terminates at or with a common height H with an outside A of the secondary component metallization 22. The outside A is understood to mean in particular the outer surface of the metallizations 21, 22 or metal sections 31, 32, which faces away from the ceramic element 10 and extends essentially parallel to the main extension plane HSE. The common height H is measured in particular along a stacking direction S that runs perpendicular to the main extension plane HSE. In order to ensure that the outside A ends at the common height H, the exemplary embodiment sees it 1 provides that the secondary component metallization 22 is arranged in a recess of the primary component metallization 21 and in particular the secondary component metallization 22 has a first thickness D1 and the first insulation layer 40 has a first insulation layer thickness ID1, the outer sides A of the primary component metallization 21 and the secondary component metallization 22 complete at the common height H. Furthermore, the in 1 In the embodiment shown, the outside A of the primary component metallization 21 and the outside A of the secondary component metallization 22 belong to the first metal section 31.

The secondary component metallization 22 is electrically insulated from the primary component metallization 21 by the insulation layer 40. In particular, it is provided that the insulation layer 40 is designed like an island. To form a corresponding island-like insulation layer 40, it is provided that a first size (L, D), which is assigned to the ceramic element 10, is many times larger than a second size (D1, L1), which is assigned to the island-like insulation layer 40 . The first size (D, L) is determined by the volume of the ceramic element 10 and the second size (D1, L1) is determined by the volume of the island-like insulation layer 40. In the in 1 In the illustrated embodiment, the first insulation thickness ID1 and the first length L1 are shown for the insulation layer 40, the first length L1 being intended to be understood as representative of a surface area in a plane running parallel to the main extension plane. In particular, it is provided that a ratio of the second size D1, L1 to the first size D, L assumes a value that is smaller than 0.4, preferably smaller than 0.22 and particularly preferably smaller than 0.15 or even less than 0.1

The advantage that results from corresponding island-like insulation layers 40 is, in particular, that full-surface insulation layers 40 are avoided. This is particularly advantageous because heat emanating from electrical components would otherwise have to pass through both the insulation layer 40 and the ceramic element 10. This is particularly disadvantageous because the thermal resistance increases due to the corresponding passage of the insulation layer 40 and ceramic element 10, as a result of which the maximum output power of the electronic module 100 with its electrical components cannot be used. Furthermore, it is preferably provided that the secondary component metallization 22 essentially serves as a conductor track for signal routing or for guiding a load current and the primary component metallization 21 essentially serves to connect electronic components, in particular power electronic components or high-performance electronic components. This has the decisive advantage that the secondary component metallizations 22 are preferably free of high-performance electronic components or power components or active electrical or electronic components, in particular with increased power loss. This means that the requirements for the dissipation of thermal energy or heat are in the range of secondary component metallization 22 is lower and the thermal resistance, which is increased due to the insulation layer 40 and the ceramic element 10 to be passed through, plays a minor role. In contrast, electronic components or in particular high-performance electronic components are arranged on the outside A of the primary component metallization 21. In this area it is advantageous that essentially only metal and not the insulation layer 40 is arranged below the components. Here, the thermal resistance is not increased compared to the areas in which the insulation layer 40 is arranged. In addition, the part of the primary component metallization 21, which is arranged below the insulation layer 40, can also be used to dissipate the thermal energy, in particular taking into account a heat spread below the component that is connected to the outside A of the primary component metallization 21 the area below the insulation layer 40 can extend. This optimizes the thermal resistance as a whole in the entire electronic module 100.

Preferably, it is provided that the insulation layer 40 has a first insulation layer thickness ID1 and is arranged in particular at a first height H1 relative to the ceramic element 10 in a direction perpendicular to the main extension plane HSE. In particular, the first insulation layer thickness ID1 and/or the first height H1 are adjusted in such a way that optimal current conduction or signal conduction and/or for conducting a load current in the secondary component metallization 22 is made possible.

In addition to the insulation layer 10 and the secondary component metallization 22, the electronic module 100 of the first exemplary embodiment also includes a further insulation layer 41 and a further secondary component metallization 23. The further insulation layer 41 and the further secondary component metallization 22 are arranged in the second metal section 32. The insulation layer 40 and the secondary component metallization 22 of the first section differ from the further insulation layer 41 and the further secondary component metallization 23 of the second metal section 32 in that the further secondary component metallization 23 is structured, that is, preferably has two conductor tracks. In particular, it is provided that the conductor tracks of the further secondary component metallization 22 shown here, which are electrically insulated from one another, are provided or designed to conduct anti-parallel electrical currents. This advantageously reduces an inductive effect, as this has a compensating effect due to the currents running in opposite directions.

Furthermore, it is provided that the further insulation layer 41 is arranged at a second height H2 relative to the ceramic element 10 in a direction perpendicular to the main extension plane HSE, wherein the first height H1 differs from the second height H2. As a result, it is provided that a second thickness D2 of the further secondary component metallization 23 is smaller than a first thickness D1 of the secondary component metallization 22. In particular, it is provided that the outside A of the further secondary component metallization 22 also ends at the common height H. In particular, it is provided that all outer sides A end at a common height H relative to the ceramic element 10 in order to ensure a common flush finish towards the component side. This applies to the primary component metallization 21, the secondary component metallization 22 and the further secondary component metallization 23.

Furthermore, it is advantageously provided that the further insulation layer 41 has a second insulation layer thickness ID2, which is greater than the insulation layer thickness ID1. In particular, it is provided that the first insulation layer thickness ID1 and/or the second insulation layer thickness ID2 are selected such that they meet the electrical insulation requirements of the conductor tracks of the secondary component metallization 22 or the further secondary component metallization 23. This can be adapted to the respective use case. In particular, it is also conceivable that the height-offset arrangement or the different first heights H1 and second heights H2 can be used to dimension the first thicknesses D1 and second thicknesses D2, which can advantageously control how large the currents can be can flow through the secondary component metallization 22 or the further secondary component metallization 23. The design freedom therefore makes it possible to adapt the first height H1 and second height H2 to the respective application.

In addition to the insulation layer 10 and the further insulation layer 41, the first metal section 31 also includes a second further insulation layer 42 with a second further secondary component metallization 24. In analogy to the secondary component metallization 22 or insulation layer 40 and the further secondary component metallization 23 and the further insulation layer 41 The same applies here analogously to the third thickness D3 of the second further secondary component metallization, the third insulation layer thickness ID3 and the third height H3.

Furthermore, it is provided that the insulation layer 10, the further insulation layer 40 and/or the second further insulation layer 41 contacts the primary component metallization 21 at least on a first side S1 and on a second side S2. In the case of the insulation layer 1 It is further provided that a third side S3 is contacted by the primary component metallization 21. It is provided that the first side S1 runs essentially parallel to the main extension plane HSE, while the second side S2 and third side S3 of the insulation layer 40 runs essentially perpendicular to the main extension plane HSE. In particular, it is provided that the secondary component metallization 21 is provided for carrying load current.

In 2 an electronic module 100 is shown according to a second exemplary embodiment of the present invention. In the exemplary embodiment shown here, the electronic module 100 comprises, for example, only a first metal section 31. However, it is also conceivable that a second metal section 32 is formed next to the first metal section 31 shown here. In particular, the exemplary embodiment differs in that 2 from the one in 1 in that the insulation layer 40 is contacted by the primary component metallization 21 on the first side S1, the second side S2, the third side S3 and a fourth side S4. The fourth side S4 runs essentially parallel to the main extension plane HSE and is arranged opposite the first side S1 in a direction perpendicular to the main extension plane HSE. In other words: The primary component metallization 21 surrounds the insulation layer 40 at preferably opposite ends, whereby the insulation layer 40 and the primary component metallization 21 interact in a form-fitting manner, in particular in both directions, which run perpendicular to the main extension plane HSE. As a result, the insulation layer 40 is advantageously integrated into the primary component metallization 21 in such a way that a permanent and secure connection between the primary component metallization 21 and the insulation layer 40 is guaranteed. In addition, it is possible to influence the insulation behavior of the secondary component metallization 22 compared to the primary component metallization 21 by appropriately dimensioning the first length L1 and/or the first surface of the insulation layer 40.

In 3 an electronic module 100 is shown according to a third exemplary embodiment of the present invention. In the 3 The embodiment shown comprises a first metal section 31 and a second metal section 32. In the exemplary embodiment shown here, it is provided that the outside A of the secondary component metallization 22 of the first metal section 31 ends at the common height H with the outside A of the primary component metallization 21 in the second Metal section 32. In the exemplary embodiment shown here, it is provided that the insulation layer 40 is not formed in a recess of the primary component metallization 21. Instead, it is provided here that the insulation layer is arranged or formed in particular on a base-like projection of the primary component metallization 21. Preferably, it is provided that the insulation layer 40 projects in a direction parallel to the main extension plane HSE relative to the base-like section in the primary component metallization 21 in the first metal section 31. This advantageously realizes a pullback, which in particular effectively avoids an electrical interaction between the secondary component metallization 22 and the primary component metallization 21.

In the in 4 In the illustrated embodiment of the electronic module 100 according to an exemplary fourth embodiment of the present invention, it is provided that the insulation layer 40 contacts the primary component metallization 21 on the first side S1 and the second side S2. In contrast to the exemplary embodiment in 1 It is therefore provided that the third side S3 and the fourth side S4 of the insulation layer 40 are free of the primary component metallization 21. In particular, in the exemplary embodiment shown here, it is provided that the insulation layer 40 protrudes into a recess of the primary component metallization 21, which means that at least a portion of the first side S1 of the insulation layer 40 is also exposed. This further improves the electrical insulation between secondary component metallization 22 and primary component metallization 21. In particular, it should be noted that the free area shown here, into which the insulation layer 40 projects, does not extend to the ceramic element 10, so that this is not an insulation trench 5, so that the 4 essentially represents a first metal section 31. As already mentioned, this can also be part of a primary component metallization with a first metal section 31 and a second metal section 32.

In the 5 an electronic module 100 is shown according to a fifth exemplary embodiment. In particular, it is provided that the first metal section 31 has an insulation layer 40 with a secondary component metallization 22 and the second metal section 32 has a further insulation layer 41 with a further secondary component metallization 23. For the insulation layer 40 and the further insulation layer 41 as well as for the secondary component metallization 22 and the further secondary component metallization 23, the same properties apply that are already in connection with 1 were discussed. In exemplary embodiment 5, it is merely additionally provided that both the insulation layer 40 and the further insulation layer 41 are contacted by the primary component metallization, in particular in the first side S1, the second side S2, the third side S3 and the fourth side S4 respective first metal section 31 and second metal section 32.

In 6 1 shows a top view of an electronic module 100 according to an exemplary embodiment of the present invention. In the plan view, the island-like insulation layers 40 are shown with the dashed lines for clarity, as are the secondary component metallizations 22 and the primary component metallizations 21. In the exemplary embodiment shown here, the insulation layers 40 protrude into the primary component metallization 21, so that here the first side S1, which second side S2, the third side S3 and the fourth side S4 are contacted by the primary component metallization 21. In particular, it is provided that, for example, the insulation layer 40 has an L-shaped profile. In principle, it is conceivable that the insulation layer 40 assumes any geometric shape, in particular with regard to a surface that runs parallel to the main extension plane HSE. The geometric shape of the insulation layer is preferably adapted to the requirements of the individual case.

List of reference symbols:

1

Metal-ceramic element

5

Isolation trench

10

Ceramic element

20

Cooling side metallization

21

primary component metallization

22

secondary component metallization

23

further secondary component metallization

24

second further secondary component metallization

31

first metal section

32

second metal section

40

insulation layer

41

another layer of insulation

42

second further insulation layer

100

Electronic module

D

thickness

D1

first thickness

D2

second thickness

D3

third thickness

H1

first height

H2

second height

H

Height

IS1

first insulation layer thickness

IS2

second insulation layer thickness

IS3

third insulation layer thickness

A

Outside

HSE

Main extension plane

S1

first page

S2

second page

S3

third party

S4

fourth page

L

length

L1

first length

QUOTES INCLUDED IN THE DESCRIPTION

This list of documents listed by the applicant was generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• DE 102013104739 A1 [0002]
• DE 19927046 B4 [0002]
• DE 102009033029 A1 [0002]
• DE 10227658 A1 [0003]
• WO 2021180639 A1 [0003]
• EP 3252810 A1 [0004]
• DE 102012206276 A1 [0004]
• DE 2013113734 A1 [0048]

Claims (10)

Electronics module (100), in particular power electronics module, comprising - a metal-ceramic substrate (1) serving as a carrier with a ceramic element (10) and a primary component metallization (21) and preferably with a cooling side metallization (20), - an insulation layer (40) which is connected directly or indirectly to the primary component metallization (21), and - a secondary component metallization (22), which is connected to the side of the insulation layer (40) facing away from the ceramic element (10) and is in particular insulated from the primary component metallization (21) by the insulation layer (40), wherein the ceramic element (10) has a first size (L, D) and the insulation layer (40) has a second size (L1, D1) and wherein to form an island-like insulation layer (40) on the primary component metallization (21), a ratio of the second Size (L1, ID1) to the first size (L, D) assumes a value that is less than 0.4, preferably less than 0.22 and particularly preferably less than 0.15 or even less than 0.1, wherein, viewed in a direction perpendicular to the main extension plane (HSE), an outside (A) of the secondary component metallization (22) and an outside (A) of the first component metallization (21) essentially terminate at a common height, and wherein the primary component metallization (21) essentially serves to connect electronic components, in particular power electronic components, and the secondary component metallization essentially serves as a conductor track for signal routing and/or for guiding a load current. Electronic module (100), according to Claim 1 , wherein the primary component metallization (21) to form a first metal section (31) and a second metal section (32) is structured such that the first metal section (31) and the second metal section (32) are electrically insulated, in a perpendicular to the Seen in the direction of the main extension plane (HSE), the outside (A) of the secondary component metallization (22) in the first metal section (31) and the outside (A) of the primary component metallization (21) in the second metal section (32) essentially complete at a common height. Electronic module (100) according to one of the preceding claims, wherein the primary component metallization (21) covers the insulation layer (40) on at least two sides (S1, S2), preferably at least three sides (S1, S2, S3) and particularly preferably on at least four sides (S1, S2, S3, S4), contacted. Electronic module (100) according to one of the preceding claims, wherein the electronic module (100) has a further insulation layer (41). Electronic module (100) according to Claim 4 , wherein the insulation layer (40) and the further insulation layer (41) are arranged vertically offset from one another in a direction perpendicular to the main extension plane (HSE). Electronic module (100) according to Claim 4 or 5 , wherein the insulation layer (40) has a first insulation layer thickness (IS1) and the further insulation layer (41) has a second insulation layer thickness (ID2), wherein the first insulation layer thickness (IDS1) and the second insulation layer thickness (IDS2) are different. Electronic module (100) according to one of the preceding claims, wherein the secondary component metallization (22) has a first thickness (D1) dimensioned perpendicular to the main extension plane (HSE) and which is greater than 150 µm. Electronic module (100) according to one of the preceding claims, wherein the insulation layer (40) has a cross section in a plane running parallel to the main extension plane (HSE) that deviates from a rectangle. Electronic module (100) according to one of the preceding claims, wherein the secondary component metallization (22) is structured. Method for producing an electronic module (100) according to one of the preceding claims, wherein a metal layer or metal layer is applied to the ceramic element (10) to form the primary component metallization (21) and a further metal layer or metal layer is applied to form the secondary component metallization (22). is connected to the insulation layer (40) preferably in a common process step, in particular by hot isostatic pressing.

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