US6577660B1 - Distributed feedback type semiconductor laser device having gradually-changed coupling coefficient - Google Patents

Distributed feedback type semiconductor laser device having gradually-changed coupling coefficient Download PDF

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US6577660B1
US6577660B1 US09/621,690 US62169000A US6577660B1 US 6577660 B1 US6577660 B1 US 6577660B1 US 62169000 A US62169000 A US 62169000A US 6577660 B1 US6577660 B1 US 6577660B1
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waveguide structure
diffraction grating
set forth
coupling coefficient
period
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Yoshiharu Muroya
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NEC Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0654—Single longitudinal mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds

Definitions

  • the present invention relates to a distributed feedback (DFB) type semiconductor laser device such as a ⁇ /4-shifted DFB type semiconductor laser device.
  • DFB distributed feedback
  • a ⁇ /4 shift is located at the center of a waveguide, which can theoretically realize 100 percent yield single mode characteristics. If such a ⁇ /4-shifted DFB type semiconductor laser device has an anti-reflection (AR) coating for outputting a signal light on the front side and an AR coating for outputting a monitoring light on the rear side, the output power of the signal light is theoretically the sane as the output power of the monitoring light. As a result, the light output characteristics of the signal light deteriorate.
  • AR anti-reflection
  • a ⁇ /4 shift is located on the rear side from the center of the waveguide (see JP-A-3-110885). This will be explained later in detail.
  • the coupling coefficient is rapidly changed in the waveguide. Therefore, the output power ratio of the signal light to the monitoring light has a severe trade-off relationship with the normalized threshold gain difference and the deviation of the ⁇ /4 shift location. As a result, a margin or tolerance of the ratio of coupling coefficient on the front side to the coupling coefficient on the rear side is very small, which decreases the manufacturing yield.
  • the Bragg oscillation condition is changed by the spatial hole burning phenomenon, so that a mode skip occurs.
  • an active layer is formed above a semiconductor substrate, and an optical guide layer having a diffraction grating is provided.
  • a coupling coefficient of the waveguide is gradually increased from the front side of the waveguide to the rear side of the waveguide.
  • FIG. 1 is a cross-sectional view illustrating a prior art ⁇ /4-shifted DFB type semiconductor laser device
  • FIG. 2 is a graph showing the coupling coefficient of the device of FIG. 1;
  • FIG. 3 is a graph showing the relationship between the coupling coefficient ratio and the power output ratio of the device of FIG. 1;
  • FIG. 4 is a graph showing the normalized threshold gain difference characteristics and the ⁇ /4 shift normalized location characteristics of the device of FIG. 1;
  • FIG. 5 is a graph showing the normalized threshold gain difference characteristics of the device of FIG. 1;
  • FIG. 6 is a cross-sectional view illustrating a first embodiment of the DFB type semiconductor laser device according to the present invention.
  • FIG. 7 is a graph showing the coupling coefficient of the device of FIG. 6;
  • FIG. 8 is a graph showing the relationship between the coupling coefficient ratio and the power output ratio of the device of FIG. 6;
  • FIG. 9 is a graph showing the normalized threshold gain difference characteristics and the ⁇ /4 shift normalized location characteristics of the device of FIG. 6;
  • FIG. 10 is a graph showing the normalized threshold gain difference characteristics of the device of FIG. 6;
  • FIGS. 11A and 11B are cross-sectional views for explaining a method for manufacturing the device of FIG. 6;
  • FIG. 12 is a graph showing the coupling coefficient characteristics of the device manufactured by the method as illustrated in FIGS. 11A and 11B;
  • FIG. 13 is a graph showing the normalized electric field profile of the device manufactured by the method as illustrated in FIGS. 11A and 11B;
  • FIGS. 14A and 14B are a plan view and cross-sectional views, respectively, for explaining another method for manufacturing the device of FIG. 6;
  • FIG. 15 is a cross-sectional view illustrating a second embodiment of the DFB type semiconductor laser device according to the present invention.
  • FIG. 16 is a graph showing the period of the period modulation diffraction grating of FIG. 15;
  • FIG. 17 is a cross-sectional view illustrating a third embodiment of the DFB type semiconductor laser device according to the present invention.
  • FIG. 18 is a graph showing the coupling coefficient of the device of FIG. 17;
  • FIG. 19 is a graph showing the period of the period modulation diffraction grating of FIG. 17.
  • FIG. 20 is a graph showing the normalized electric field profile of the device of FIG. 17 .
  • reference numeral 1 designates an n-type InP substrate on which a diffraction grating 2 for determining an oscillation wavelength is formed.
  • InP substrate i Formed on the InP substrate i are an InGaAsP optical guide layer 3 , an InGaAsP strained MQW active layer 4 and a p-type InP clad layer 5 .
  • the MQW active layer 4 is sandwiched by the InP substrate 1 and the InP clad layer 5 which have a large energy band gap, to form a double heterestructure.
  • a p-type electrode 6 and an n-type electrode 7 are formed on the InP clad latter 5 and the InP substrate 1 , respectively. Further, an AR coating 8 is applied to a front facet of the device for outputting a signal light, and an AR coating 9 is applied to a rear facet of the device for outputting a monitoring light.
  • the length of a cavity is 300 ⁇ m, for example.
  • the diffraction grating 2 has two regions R 1 and R 2 which have coupling coefficients ⁇ 1 and ⁇ 2 , respectively, as shown in FIG. 2 .
  • a coupling coefficient ⁇ is defined by
  • ⁇ n is the difference in refractive index depending on the period of the diffraction grating 2 ;
  • ⁇ is a Bragg wavelength is determined by the period of the diffraction grating 2 , i.e., twice the period of the diffraction grating 2 .
  • the period of the diffraction grating 2 in the region R 1 is shifted from the period of the diffraction grating 2 in the region R 2 by ⁇ /4.
  • the output power ratio P s /P m has a severe trade-off relationship with the normalized threshold gain difference ⁇ L and the normalized location of the ⁇ /4 shift due to the rapidly-changed coupling coefficient ⁇ as shown in FIG. 2 .
  • the coupling coefficient ratio ⁇ 1 / ⁇ 2 is small to increase the output power ratio P s /P m , the normalized threshold gain difference ⁇ L becomes small and the normalized location of the ⁇ /4 shift becomes large, which cannot realize stable single mode characteristics.
  • the Bragg oscillation condition is changed by the spatial hole burning phenomenon, so that a Node skip occurs.
  • FIG. 6 which illustrates a first embodiment of the present invention
  • a diffraction grating 2 ′ is provided instead of the rapid-changed diffraction grating 2 of FIG. 1 . That is, the diffraction grating 2 ′ has a coupling coefficient ⁇ which is changed continuously or gradually from ⁇ 1 to ⁇ 2 as shown in FIG. 7 .
  • the output power ratio P s /P m has a loose trade-off relationship with the normalized threshold gain difference ⁇ L and the normalized location of the ⁇ /4 shift due to the gradually-changed coupling coefficient ⁇ as shown in FIG. 7 .
  • the coupling coefficient ratio ⁇ 1 / ⁇ 2 is small to increase the output power ratio P s /P m
  • the normalized threshold gain difference ⁇ L is still large and the normalized location of the ⁇ /4 shift is still small, which can realize stable single mode characteristics.
  • the coupling coefficient ratio ⁇ 1 / ⁇ 2 is relatively large.
  • the coupling coefficient ratio ⁇ 1 / ⁇ 2 is approximately 1 ⁇ 5 to 1 ⁇ 2, which increases the manufacturing yield.
  • a gradual change of the diffraction grating 2 ′ at the ⁇ /4 shift location invites a gradual change in the equivalent refractive index of the InGaAsP optical waveguide layer 3 , which improves the single mode characteristics.
  • the Bragg oscillation condition is not changed by the spatial hole burning phenomenon, so that a mode skip does not occur.
  • FIGS. 8, 9 and 10 discuss the static characteristics near the laser threshold value, the laser semiconductor device can realize stable single mode characteristics even at a high output operation mode and a high speed modulation operation mode.
  • an about 150 nm thick positive type electron beam resist layer 1101 is coated on an n-type InP substrate 1 , and is patterned by an electron beam exposure process.
  • the period of apertures of the resist layer 1101 is definite, i.e., 0.24 ⁇ m.
  • the electron dose amount is increased near the front side to decrease the height of the resist layer 1101
  • the electron dose amount is decreased near the rear side to increase the height of the resist layer 1101 .
  • the aperture ratio of the apertures is gradually changed, i.e., gradually increased from the front side to the rear side.
  • the InP substrate 1 is etched by HBr/H 2 O 2 /H 2 O etchant using the resist layer 1101 as a mask.
  • the resist layer 1101 is removed.
  • the InP substrate 1 can be etched by HBr etchant.
  • the reaction speed is controlled by the etchant diffusion, the etching speed is low for a region where the device is widely exposed and is high for a region where the device is narrowly exposed.
  • the relative reaction speed at each crystal surface is controlled by the etchant concentration and the temperature, the etching depth can be accurately controlled.
  • a diffraction grating 2 ′ is formed to have a height which is gradually increased from the front side to the rear side.
  • the height of the diffraction grating 2 ′ is about 10 nm and 90 nm on the front side and the rear side, respectively.
  • an InGaAsP optical waveguide layer 3 having a band gap wavelength of 1.13 ⁇ m, an InGaAsP strained MQW active layer 4 and a p-type InP layer 5 are sequentially deposited by a metalorganic vapor phase epitaxial (MOVPE) process, to form a double heterostructure where the InGaAsP strained MQW active layer 4 is sandwiched by the n-type InP substrate 1 and the p-type InP clad layer 6 which have a large band gap.
  • MOVPE metalorganic vapor phase epitaxial
  • the device is etched to form a stripe structure along the ⁇ 011> direction.
  • a current confinement structure is formed by an MOVPE process.
  • a p-type electrode 6 and an n-type electrode 7 for injecting a current into the InGaAsP strained active layer 4 are formed on the surfaces of the p-type InP clad layer 6 and the n-type InP substrate 1 by a sputtering process.
  • the device is cleaved to a waveguide length of 300 ⁇ m. Then, an AR coating 8 is applied on the front side facet, and an AR coating 9 is applied on the rear side facet.
  • a coupling coefficient ⁇ as shown in FIG. 12 was obtained.
  • the coupling coefficient ⁇ was 10 cm ⁇ 1 on the front side and 100 cm ⁇ 1 on the rear side.
  • the ratio of the normalized electric field strength at the front side to that at the rear side was about 4. Note that the normalized electric field strength shows the output power of the device. Thus, a normalized threshold gain difference ⁇ L of 0.7 or more was obtained.
  • an oscillation threshold value of 6 mA was obtained, which showed a designed value as the light output characteristics. Also, even when the oscillation is below the oscillation threshold value, an obtained threshold gain difference was equal to or higher than that of the conventional ⁇ /4-shifted DFB semiconductor laser device having a uniform diffraction grating. Thus, stable single mode characteristics were obtained at a high output operation mode and a high speed modulation operation mode.
  • an about 150 nm thick positive type electron beam resist layer 1401 is coated on an n-type InP substrate 1 , and is patterned by an electron beam exposure process.
  • the period of apertures 1401 a of the resist layer 1101 is definite, i.e., 0.243 ⁇ m.
  • the width of the apertures 1401 a is increased near the front side, while the width of the apertures 1401 a is decreased near the rear side.
  • the width of the aperture 1401 a at the front side is 15 ⁇ m
  • the width of the aperture 1401 a at the rear side is 3 ⁇ m.
  • the width of the apertures is gradually changed, i.e., gradually increased from the front side to the rear side.
  • the InP substrate 1 is etched by HBr etchant using the resist layer 1401 as a mask.
  • the resist layer 1401 is removed.
  • the reaction speed is controlled by the etchant diffusion, the etching speed is low for a region where the device is widely exposed and is high for a region where the device is narrowly exposed.
  • the relative reaction speed at each crystal surface is controlled by the etchant concentration and the temperature, the etching depth can be accurately controlled.
  • the InP substrate 1 is etched by using a wet process
  • a dry etching process can be used.
  • such a dry etching process can control the height of the diffraction grating 2 ′.
  • FIG. 15 which illustrates a second embodiment of the present invention
  • the InGaAsP optical guide layer 3 of FIG. 6 is formed on the InGaAsP strained active layer 4 of FIG. 6, and also, a period modulation diffraction grating 2 ′′ instead of the diffraction grating 2 ′ of FIG. 6 is provided between the InGaAsP optical guide layer 3 and the p-type clad layer 5 .
  • the method for manufacturing the period modulation diffraction grating 2 ′′ is carried out by the same process as in the first embodiment upon the InGaAsP optical guide layer 3 .
  • the thickness of the InGaAsP optical guide layer 3 varies widely in a region where the height of the period modulation diffraction grating 2 ′′ greatly varies.
  • a light confinement configuration changes to change the equivalent refractive index. Since the Bragg wavelength of the DFB type semiconductor laser device depends on the diffraction grating period and the waveguide equivalent refractive index element, a single mode oscillation is not obtained if the Bragg wavelength greatly changes. Therefore, in the second embodiment, as shown in FIG. 16, the period of the period modulation diffraction grating 2 ′′ is changed in order to compensate for the change of the equivalent refractive index.
  • the equivalent refractive index becomes low in a region where the InGaAsP optical guide layer 3 is thinner as the diffraction grating is deeper, the diffraction grating period is made larger to compensate for the decrease of the equivalent refractive index, so that a product between the diffraction grating period and the equivalent refractive index depends at each location is definite.
  • the structure of the InGaAsP optical guide layer 3 is changed to form the diffraction grating 2 ′′ with the modulated period in order to compensate for the change of the equivalent refractive index.
  • only the period of the diffraction grating period formed in the taper shape is changed to compensate for the equivalent refractive index.
  • FIG. 17 which illustrates a third embodiment of the present invention
  • a period modulation diffraction grating 2 ′ a is provided instead of the diffraction grating 2 ′ of FIG. 6, in order to compensate for the deviation of the equivalent refractive index where the thickness of the InGaAsP optical guide layer 3 greatly changes.
  • the coupling coefficient ⁇ gradually increases from the front side to the rear side in the same way as in the first embodiment.
  • the period of the diffraction grating 2 ′ a is made shorter in the phase modulation region R 0 so that an accumulative phase shift amount that is a sum of phase shift amounts in the phase modulation region R 0 is ⁇ /4.
  • the accumulative phase shift amount is accurately ⁇ /4 for standing waves in the waveguide.
  • the accumulative phase shift amount is a value slightly larger than ⁇ /4.
  • FIG. 20 which shows the normalized electric field profile along the axial direction of the waveguide of FIG. 17, since the concentration of the electric field at the center is suppressed as compared with the first embodiment as shown in FIG. 13, stable single mode oscillation characteristics can be obtained in a higher output operation mode. Note that stable single mode oscillation characteristics were obtained under a long-haul transmission test in a 2.5 Gbit/sec direct modulation operation mode, and the fluctuation of the characteristics of each device was small with a high manufacturing yield.
  • the method for manufacturing the period modulation diffraction grating 2 ′ a is carried out by the same process as in the first embodiment.
  • the accumulative phase shift amount in the phase modulation region R 0 is ⁇ /4 (1 ⁇ 2 of the diffraction grating period)
  • the accumulative phase shift amount can be 3 ⁇ /4 (2 ⁇ 3 of the diffraction grating period), 5 ⁇ /4 ( ⁇ fraction (5/3) ⁇ ) of the diffraction grating period or the like. That is, the accumulative phase shift amount is +(2n ⁇ 1)/2 of the period of the diffraction grating 2 ′ a where n is a natural number.
  • the absolute value of the accumulative phase shift amount in the phase modulation region R 0 is preferably from 1 ⁇ 2 to ⁇ fraction (9/2) ⁇ of the diffraction grating period.
  • the phase modulation region R 0 of the diffraction grating 2 ′ a is preferably ⁇ fraction (1/10) ⁇ to 1 ⁇ 3 of the waveguide length.
  • the allowable range of a coupling coefficient can be increased to obtain single mode characteristics and high output characteristics. Also, the manufacturing yield of devices can be enhanced. Further, even when the equivalent refractive index of a waveguide varies, the deterioration of single mode characteristics can be avoided. Still further, a mode skip due to the Bragg oscillation condition under the influence of the hole burning phenomenon in a high output operation mode can be avoided.

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US20030008428A1 (en) * 2001-07-06 2003-01-09 The Furukawa Electric Co., Ltd. Method of manufacturing semiconductor element, and semiconductor element manufactured with this method
US20030156311A1 (en) * 2002-02-18 2003-08-21 Mitsubishi Denki Kabushiki Kaisha Semiconductor light modulator
US6867900B2 (en) * 2000-08-21 2005-03-15 Genewave Support for chromophoric elements
US20050117622A1 (en) * 2002-10-30 2005-06-02 Thomas Lenosky Distributed feedback laser with differential grating
US20060187995A1 (en) * 2005-02-24 2006-08-24 Jds Uniphase Corporation Low loss grating for high efficiency wavelength stabilized high power lasers
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US20070195849A1 (en) * 2006-02-22 2007-08-23 Mitsubishi Electric Corporation Gain-coupled distributed feedback semiconductor laser having an improved diffraction grating
US20070252983A1 (en) * 2006-04-27 2007-11-01 Tong William M Analyte stages including tunable resonant cavities and Raman signal-enhancing structures
US20080212637A1 (en) * 2005-08-24 2008-09-04 Applied Optoelectronics, Inc. Distributed feedback semiconductor laser including wavelength monitoring section
US20110134955A1 (en) * 2009-12-03 2011-06-09 Renesas Electronics Corporation Semiconductor laser diode device and method of fabrication thereof
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US20150043607A1 (en) * 2013-08-08 2015-02-12 Gooch And Housego Plc Distributed feedback (dfb) laser with slab waveguide
US20150207295A1 (en) * 2014-01-23 2015-07-23 Mitsubishi Electric Corporation Distributed feedback laser diode and distributed feedback laser diode fabrication method
WO2017001062A1 (de) * 2015-06-30 2017-01-05 Forschungsverbund Berlin E.V. Laserdiode mit verteilter rückkopplung und verfahren zur herstellung
US10109981B2 (en) 2013-12-27 2018-10-23 Intel Corporation Asymmetric optical waveguide grating resonators and DBR lasers
US20220263286A1 (en) * 2021-02-16 2022-08-18 Macom Technology Solutions Holdings, Inc. High kappa semiconductor lasers

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JP2018046128A (ja) * 2016-09-14 2018-03-22 株式会社東芝 量子カスケードレーザ装置
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