US6421626B1 - Low voltage/low power temperature sensor - Google Patents

Low voltage/low power temperature sensor Download PDF

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Publication number
US6421626B1
US6421626B1 US09/187,502 US18750298A US6421626B1 US 6421626 B1 US6421626 B1 US 6421626B1 US 18750298 A US18750298 A US 18750298A US 6421626 B1 US6421626 B1 US 6421626B1
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resistor
temperature
frequency signal
temperature dependent
capacitor
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US09/187,502
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US20020022941A1 (en
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Rong Yin
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STMicroelectronics lnc USA
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STMicroelectronics lnc USA
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Assigned to ST MICROELECTRONICS, INC. reassignment ST MICROELECTRONICS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: YIN, RONG
Priority to EP99308648A priority patent/EP0999435A3/de
Priority to JP11316291A priority patent/JP2000146710A/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions

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  • the present invention relates to a circuit which determines the temperature of a device. More particularly, a complementary metal oxide semiconductor (CMOS) circuit is provided which uses a current source to generate charge and discharge voltages applied to a capacitor. These voltages are dependent on the temperature coefficient of a resistor in the current source. The charge and discharge times are then used to determine a frequency which is dependent on the temperature of the resistor. Thus, the temperature is sensed based on the output frequency of the circuit.
  • CMOS complementary metal oxide semiconductor
  • Temperature sensors have many applications.
  • a large number of circuits and/or functional units in today's electronic devices are temperature sensitive and require accurate and reliable temperature information in order to take corrective action when the temperature becomes too high.
  • the system frequency may be reduced when a certain temperature threshold is reached in order to cause the temperature to be reduced below the critical point.
  • systems such as portable electronic devices (games, laptops, notebook computers, personal digital assistants), and the like are sensitive to power consumption and may need to shut down all or part of their operations when the power, which is function of temperature, reaches a certain level. Additionally, some individual circuits may need to be disconnected or shut down when the temperature reaches a predetermined level.
  • Another application is an oscillator, such as a crystal oscillator which is frequency dependent. In this case a temperature sensor is required to adjust the accuracy of the output frequency.
  • Rechargeable battery applications is yet another area wherein an accurate and reliable temperature sensor will have utility.
  • the present invention is a temperature sensor which is based on the actual temperature coefficients of a device in the circuit, rather than a predetermined threshold voltage that varies across different devices.
  • the present invention relates to a circuit which determines the temperature of a device. More particularly, CMOS circuit is provided which uses a current source to generate charge and discharge voltages applied to a capacitor. These voltages are dependent on the temperature coefficient of a resistor in the current source. The charge and discharge times are then used to determine a frequency which is dependent on the temperature of the resistor. Thus, the temperature is sensed based on the output frequency of the circuit.
  • An additional feature of the present invention is a mechanism which allows the temperature sensor to be activated or deactivated as needed.
  • FIG. 1 is a block diagram of a data processing system including components capable of implementing the present invention
  • FIG. 2 is a schematic diagram of the elements that make up a preferred embodiment of the present invention.
  • FIG. 3 is a more detailed schematic diagram of the activation mechanism of the present invention.
  • FIG. 4 are timing diagrams showing the waveforms at particular times which are present at various nodes in the circuit schematic of FIG. 2 .
  • the temperature sensor is provided in selected ones of the integrated circuits, or chips, that make up the system.
  • the temperature sensor of the present invention may be provided on an application specific integrated circuit (ASIC) in the clocking portion.
  • ASIC application specific integrated circuit
  • the frequency output from the clock circuit can be lowered when the sensor of the present invention determines that a temperature above a predetermined threshold has been reached.
  • control signals can be provided to the clock circuit, such as a phase locked loop (PLL) in order to regulate the temperature of the chip.
  • PLL phase locked loop
  • This clock circuit may be used to drive the frequency of a microprocessor, microcontroller, digital signal processor (DSP) or like embedded on the ASIC.
  • the senor of the present invention can determine when a temperature threshold is reached in order to turn off various non-critical portions of an IC to reduce the power consumption and corresponding temperature.
  • a temperature threshold is reached in order to turn off various non-critical portions of an IC to reduce the power consumption and corresponding temperature.
  • FIG. 1 a typical data processing system is shown which may be used in conjunction with the present invention.
  • This data processing system could include virtually any system having a need to regulate the temperature of an included device or circuit, including a laptop computer, PDA, desktop computer, or the like.
  • a central processing unit (CPU) 10 such as the Pentium II microprocessor, commercially available from Intel Corp. may be provided, although other microprocessors from other manufacturers, such as the PowerPC microprocessor, commercially available from IBM Corporation may also be used.
  • Microprocessor 10 is interconnected to the various other components by system bus 12 read only memory (ROM) 16 is connected to CPU 10 via bus 12 and includes the basic input/output system (BIOS) that controls the basic computer functions.
  • ROM read only memory
  • BIOS basic input/output system
  • RAM 14 Random access memory
  • I/O adapter 18 may be a small computer system interface (SCSI) adapter that communicates with a disk storage device 20 .
  • Communications adapter 34 interconnects bus 12 with an outside network enabling the data processing to communication with other such systems, via the internet, local area network (LAN), or the like.
  • Input/output devices are also connected to system bus 12 via user interface adapter 22 and display adapter 36 .
  • Keyboard 24 , track ball 32 , mouse 26 and speaker 28 are all interconnected to bus 12 via user interface adapter 22 .
  • Display monitor 38 is connected to system bus 12 by display adapter 36 .
  • a user is capable of inputting to the system through the keyboards 24 , trackball 32 , or mouse 26 and receiving output from the system via speaker 28 and display 38 .
  • an operating system such as one of the versions of Windows, commercially available from Microsoft Corporation is used to coordinate the functions of the various components shown in FIG. 1 .
  • a preferred embodiment of the temperature sensor of the present invention is shown.
  • a switching mechanism is shown with allows the temperature sensor to be turned on or off.
  • a switching circuit which can be used by the system microprocessor or controller to disable the temperature sensor in order to further reduce the total power consumption.
  • An input signal is provided on node 50 to a first inverter 51 .
  • a second inverter 53 , delay circuit 55 and third inverter 57 are also part of the switching circuit.
  • a P-type transistor 58 is shown with its gates connected to the output of inverter 51 . P-type devices will conduct electricity when a logical “0” (absence of a voltage) is provided to their gate.
  • An N-type transistor 52 having its gate connected to the output of inverter 53 . N-type transistors will conduct electricity when a logical “1” (voltage) is applied to their gate.
  • P-type transistor 54 is also shown with its gate connected to the output of delay circuit 55 , and it can be seen N-type transistor 56 has its gate connected to the output of inverter 57 .
  • transistors 101 , 102 , 103 , 104 and resistor 105 When a “stop” signal input to node 50 is set equal to logical 1 , then the current source formed by transistors 101 , 102 , 103 , 104 and resistor 105 is turned off. Specifically, when the output of inverter 51 transitions from a “1” to a “0” transistor 58 will conduct electricity and pull node 60 to Vcc. The output of inverter 53 will be a “1” when the input to node 50 is set. Therefore, transistor 52 will conduct electricity and pull node 61 down to the reference voltage (potential), in this case, Vss. It can be seen that when node 60 is at Vcc, transistors 101 and 102 will not conduct and cannot supply the current needed for the temperature sensor to operate. Transistor 106 , 107 , 108 and 109 are P-type transistors and form current mirrors. Each of these transistors has its gate connected to node 60 such that when transistors 101 and 102 of
  • the input control signal at node 50 is switched from high (1) to low (0). This causes a short pulse to be generated at the gate of transistor 54 (from delay circuit 55 ). Also a pulse is provided from inverter 57 to the gate of transistor 56 .
  • transistor 54 conducts, node 61 will then be pulled up to Vcc causing transistors 103 and 104 of the current source to conduct.
  • node 60 is pulled down to Vss when transistor 56 begins to conduct and transistor 101 and 102 also begin to conduct and the current source then operates.
  • transistors 101 , 102 , 103 , 104 and resistor 105 form a current source which provides electrical current through transistors 102 , 104 and resistor 105 . All of the transistors, 101 , 102 , 103 and 104 are working at weak inversion.
  • the voltage (Va) at node 62 can be determined using the following equation:
  • Va kT/q ln S 104 S 101 /S 103 S 102 .
  • Equation (1) “S” represents the transistor size, i.e. width/length (W/L), for the transistors in the current source ( 101 , 102 , 103 , 104 ).
  • a current mirror is formed by transistor 106 wherein the same current that flows through transistors 102 , 104 and resistor 105 will also flow through transistor 106 and resistors 109 and 110 .
  • the voltage (Vd) at node 63 can be determined in accordance with the following equation:
  • Vd ( S 106 /S 102 )( R 110 /R 105 )( Va ).
  • Vc voltage (Vc) at node 64
  • Vc ( S 106 /S 102 )(( R 109 +R 110 ) /R 105 )( Va ).
  • Vc is the voltage drop across resistors 109 and resistor 110
  • Vd is the voltage across resistor 110 .
  • the capacitors are implemented by using N-type depletion transistors. That is, the source and drain of an N-type transistor are coupled to one another and a capacitance is created across the gate and the connected source/drain of the transistor. Capacitors 120 , 121 and 122 are such N-depletion transistors.
  • the temperature sensor of the present invention then utilizes capacitor 120 to determine the output frequency. More particularly, when the current source is active, transistor 108 will be turned on to conduct electricity. When N-type transistor 115 is on, the current will be used to charge capacitor 120 . P-type transistor 107 will also conduct when transistor 108 is turned on. This will cause transistors 111 and 112 to conduct such that capacitor 120 has a path to Vss for the discharge current.
  • the current used to charge capacitor 120 is represented by the following equation:
  • the discharge current from capacitor 120 can be characterized by:
  • the voltages Vc and Vd are the charging and discharging voltages, respectively.
  • the voltage at node 71 is switched between Vc and Vd through two N-type transistor passgates 146 and 147 .
  • passgate 146 When passgate 146 is turned on, the voltage on node 71 is at Vc (charge). Also, when transistor 146 is turned on N-type passgate transistor 115 will also be turned on allowing capacitor 120 to be charged to the Vc voltage level through node 70 . While the voltage at node 70 is greater than the voltage at node 71 , the voltage at node 72 is approximately the same as the threshold voltage (Vtn) of an N-type transistor, e.g. transistor 130 and the voltage at node 73 is substantially zero (0).
  • node 75 goes high (1) and turns on passgate 147 and N-type pass gate, transistor 117 . In this case, the voltage at node 71 then switches to the Vd (discharge) level.
  • passgate 117 turns on, node 70 begins to discharge to the Vd voltage level and the discharge current will flow through transistor 112 to Vss.
  • a comparator is used to as a current to frequency converter. More particularly the comparator will transform the analog current output sensor signal to a digital control signal.
  • the comparator is formed by P-type transistors 109 , 125 and 126 , along with N-type transistors 127 , 128 , 129 and 130 , where transistors 128 and 129 are provided, in a preferred embodiment, to add more gain to transistors 127 and 130 .
  • the waveforms at nodes 72 and 73 are quasi square waves with a 180 degree phase shift. The frequency of these square waves carry the temperature information. This frequency can be translated into a digital number by counting the square wave pulses over a predetermined period.
  • a differential to single converter (level shifter) is then utilized in a preferred embodiment of the present invention to translate the differential waveforms into a single temperature dependent signal.
  • This converter is formed by P-type transistors 133 and 134 in conjunction with N-type transistors 132 and 135 . From FIG. 4, it can be seen that when node 73 is at the threshold voltage of an N-type transistor (Vtn), node 72 will be low and vice versa. During the time period when node 72 is at the Vtn level, transistor 132 will be turned on causing the gates of transistors 133 and 134 to be pulled to Vcc ⁇ Vtp.
  • the gates of these transistors is pulled to the voltage level of the input voltage (Vcc) minus the threshold voltage of a P-type transistor (Vtp).
  • Vcc input voltage
  • Vtp threshold voltage of a P-type transistor
  • node 74 is effectively the output of the temperature sensor of the present invention.
  • this node is connected to a series of inverters which are used to increase the speed of the signal on node 74 .
  • inverters are connected. These inverters are formed by P-type transistors 136 , 138 , 140 and 142 , connected with N-type transistors, 137 , 139 , 141 and 143 , respectively.
  • node 72 when node 72 is at the Vtn level, node 74 will also be high and the output of the temperature sensor at node 145 will also be high.
  • node 73 will is low and will not turn on transistor 135 .
  • node 73 will be at the Vtn voltage level turning on transistor 135 which causes node 74 to be pulled down to Vss thereby turning on P-type transistor 136 , This causes the output of the inverter (formed by transistors 136 and 137 ) to be high (1). In this case the output of the temperature sensor at node 145 will be low (0).
  • the output at node 145 will be low.
  • the temperature sensor of the present invention will provide an output signal at node 145 having a frequency that is dependent on the temperature of various components in the circuit.
  • the frequency at the output will be based on two time periods, i.e. the time to charge the capacitor 120 and the time it takes to discharge the capacitor.
  • the time to charge the capacitor is shown by the following equation:
  • the time period for the sensor to discharge is determined by the following:
  • the frequency at the output is shown by:
  • R 109 is the only temperature dependent element. Since the temperature coefficient of this resistance (TCR) is known, the frequency output will be inversely proportional to the TCR. By monitoring the frequency the temperature of the circuit can be determined. That is, as the frequency changes the chip temperature is sensed. Those skilled in the art will understand that a device, such as a counter, or the like can be connected to the output node 145 to monitor the frequency of the output signals, i.e. the number of times capacitor 120 charges and discharges over a given time period. For materials with a positive TCR, as the temperature increases, the frequency will decrease. Similarly, as the temperature decreases the frequency will correspondingly increase.
  • TCR temperature coefficient of this resistance
  • the frequency is inversely proportional to the temperature of the sensing circuit, i.e. the thermal coefficient of the resistance for resistor R 109 .
  • the frequency will be substantially supply voltage independent.
  • the present invention is transistor model independent. More particularly, the temperature sensor of the present invention is not dependent on the threshold voltage of the transistors, it is threshold voltage (Vt) independent. Equation (10) depends entirely on the actual characteristics of the circuit components, rather than a predetermined threshold voltage value for the N-type and P-type devices in the circuit.
  • a constant frequency oscillator can be provided.
  • This oscillator will also be a low power, low voltage system in accordance with the previous discussion and the description of the switching circuit of FIG. 3 .
  • the resistor R 109 such as an N-type resistor, to have a zero (0) temperature coefficient of resistance at a particular ambient temperature, the frequency output of the circuit will be constant. Thus, an accurate frequency level can be maintained.
  • Inverters 51 and 53 are shown connected to pulse generator 55 which includes a delay circuit.
  • This delay circuit includes five (5) additional inverters, 300 , 301 , 302 , 303 and 304 connected in series.
  • the input to pulse generator circuit 55 is also connected as one input to a NOR gate 305 with the output of the series of inverters from inverter 304 being the other input to NOR gate 305 .
  • the output of pulse generator circuit 55 is provided to inverter 57 .
  • inverter 51 when a logical zero (0) is input at node 50 , inverter 51 outputs a logical one (1) to transistor 58 of FIG. 2 and inputs a one to inverter 53 which outputs a zero to transistor 52 and to pulse generator circuit 55 .
  • a zero is input to NOR gate 305 at node A, while a one is output from inverter 304 and input to NOR gate 305 at node B.
  • the input at node 50 transitions back to a logical zero, which places a zero on node A of NOR gate 305 at the same time the previous logical zero is still on node B of NOR gate 305 . Therefore, during the delay time required for the logical one (due to the logical zero now input to node 50 ) to traverse the delay inverters ( 300 , 301 , 302 , 303 , 304 ) a zero, zero (0, 0) will be present on nodes A and B of NOR gate 305 . During this time a logical one output pulse is generated from NOR gate 305 .
  • This pulse will have a duration substantially equivalent to the amount of time required for the zero input to inverter 300 to traverse the delay inverters.
  • the output pulse from NOR gate 305 will then cause the temperature sensor of the present invention to begin operating. That is, a logical one is output from NOR gate 305 thus causing a logical zero to be provided from inverter 306 to P-type transistor 54 , which turns this transistor on. Additionally, a one is output from inverter 57 that will cause N-type transistor 56 to being to conduct.
  • transistor 54 will input Vcc to the gate of transistors 103 , 104 and transistor 56 will pull the gate of transistors 101 , 102 to Vss causing it to be turned on. The current source of the temperature sensor will then begin operation.
  • the switching mechanism will remain off until the input to node 50 is changed to logical zero when transistors 52 and 58 are turned off and the current generator ceases operation until a transition to a logical one occurs at node 50 and a pulse is subsequently generated from NOR gate 305 by changing the input to node 50 to a zero.
  • a control circuit can be used to provide the input signals to node 50 that will cause the temperature sensor of the present invention to be shut off in order to conserve electrical power.
  • the fifth waveform is the temperature sensor circuit output. It can be seen that it follows the waveform at node 72 . More particularly, when node 72 is at Vtn, transistor 132 is turned on and causes reference potential to be input to the gate of N-type transistor 134 which places a logical one on node 74 . This will cause a logical one to be output on node 145 (an even number of inverters is present between nodes 74 and 145 ). When node 73 is at Vtn, N-type transistor 135 is turned on causing a reference potential (logical 0) to be output on node 74 and ultimately on node 145 . Thus, it can be seen that the output on node 145 follows the waveform on node 72 , but is the complement of the waveform on node 73 .

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
US09/187,502 1998-11-06 1998-11-06 Low voltage/low power temperature sensor Expired - Lifetime US6421626B1 (en)

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US09/187,502 US6421626B1 (en) 1998-11-06 1998-11-06 Low voltage/low power temperature sensor
EP99308648A EP0999435A3 (de) 1998-11-06 1999-11-01 Niederspannungs-Temperatursensor mit niedrigem Verbrauch
JP11316291A JP2000146710A (ja) 1998-11-06 1999-11-08 低電圧／低電力温度センサ

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Cited By (9)

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US20030219062A1 (en) * 2002-05-21 2003-11-27 Egidio Paul B. System and method for temperature sensing and monitoring
US6702457B1 (en) * 2001-12-20 2004-03-09 National Semiconductor Corporation Method and apparatus for a thermal wake-up circuit
US20040181705A1 (en) * 2003-03-10 2004-09-16 Gauthier Claude R. Clock skew reduction technique based on distributed process monitors
US20070079188A1 (en) * 2003-05-28 2007-04-05 Veendrick Hendricus J M Signal integrity self-test architecture
US20090268778A1 (en) * 2008-04-23 2009-10-29 Nanya Technology Corp. Temperature detector and the method using the same
US7898295B1 (en) 2009-03-19 2011-03-01 Pmc-Sierra, Inc. Hot-pluggable differential signaling driver
US8931953B2 (en) 2010-05-27 2015-01-13 The Hong Kong University Of Science And Technology Low voltage low power CMOS temperature sensor circuit
US9749739B2 (en) 2015-09-18 2017-08-29 Qualcomm Incorporated Protection of a speaker from thermal damage
US9998124B2 (en) 2012-09-07 2018-06-12 University Of Virginia Patent Foundation Low power clock source

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FR2845781B1 (fr) 2002-10-09 2005-03-04 St Microelectronics Sa Generateur de tension de type a intervalle de bande
US7084695B2 (en) 2004-08-31 2006-08-01 Micron Technology, Inc. Method and apparatus for low voltage temperature sensing
US7127368B2 (en) * 2004-11-19 2006-10-24 Stmicroelectronics Asia Pacific Pte. Ltd. On-chip temperature sensor for low voltage operation
US7460932B2 (en) 2005-11-29 2008-12-02 International Business Machines Corporation Support of deep power savings mode and partial good in a thermal management system
JP5264741B2 (ja) 2006-10-09 2013-08-14 インシデ エセ ア 温度センサ
US7914204B2 (en) * 2007-04-02 2011-03-29 Korea University Industrial & Academic Collaboration Foundation Apparatus and method for measurement of temperature using oscillators
ITUD20070076A1 (it) 2007-04-26 2008-10-27 Eurotech S P A Dispositivo di visualizzazione interattivo e procedimento di configurazione con unita' di calcolo
JP5213175B2 (ja) * 2008-11-14 2013-06-19 セイコーインスツル株式会社 温度センサ
JP5736744B2 (ja) * 2010-01-26 2015-06-17 セイコーエプソン株式会社 熱センサーデバイス及び電子機器

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6702457B1 (en) * 2001-12-20 2004-03-09 National Semiconductor Corporation Method and apparatus for a thermal wake-up circuit
US20030219062A1 (en) * 2002-05-21 2003-11-27 Egidio Paul B. System and method for temperature sensing and monitoring
US7004625B2 (en) * 2002-05-21 2006-02-28 Acrolon Technologies, Inc. System and method for temperature sensing and monitoring
US20040181705A1 (en) * 2003-03-10 2004-09-16 Gauthier Claude R. Clock skew reduction technique based on distributed process monitors
US7069459B2 (en) * 2003-03-10 2006-06-27 Sun Microsystems, Inc. Clock skew reduction technique based on distributed process monitors
US7478302B2 (en) * 2003-05-28 2009-01-13 Nxp B.V. Signal integrity self-test architecture
US20070079188A1 (en) * 2003-05-28 2007-04-05 Veendrick Hendricus J M Signal integrity self-test architecture
US20090268778A1 (en) * 2008-04-23 2009-10-29 Nanya Technology Corp. Temperature detector and the method using the same
US8123404B2 (en) * 2008-04-23 2012-02-28 Nanya Technology Corp. Temperature detector and the method using the same
US7898295B1 (en) 2009-03-19 2011-03-01 Pmc-Sierra, Inc. Hot-pluggable differential signaling driver
US8931953B2 (en) 2010-05-27 2015-01-13 The Hong Kong University Of Science And Technology Low voltage low power CMOS temperature sensor circuit
US9998124B2 (en) 2012-09-07 2018-06-12 University Of Virginia Patent Foundation Low power clock source
US9749739B2 (en) 2015-09-18 2017-08-29 Qualcomm Incorporated Protection of a speaker from thermal damage

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US20020022941A1 (en) 2002-02-21
JP2000146710A (ja) 2000-05-26
EP0999435A3 (de) 2003-01-08
EP0999435A2 (de) 2000-05-10

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