US5913974A - Heat treating method of a semiconductor single crystal substrate - Google Patents
Heat treating method of a semiconductor single crystal substrate Download PDFInfo
- Publication number
- US5913974A US5913974A US08/945,413 US94541397A US5913974A US 5913974 A US5913974 A US 5913974A US 94541397 A US94541397 A US 94541397A US 5913974 A US5913974 A US 5913974A
- Authority
- US
- United States
- Prior art keywords
- single crystal
- crystal substrate
- back surface
- reflectivity
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 148
- 239000013078 crystal Substances 0.000 title claims abstract description 89
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000002310 reflectometry Methods 0.000 claims abstract description 71
- 238000010438 heat treatment Methods 0.000 claims abstract description 55
- 230000007423 decrease Effects 0.000 claims abstract description 12
- 230000003247 decreasing effect Effects 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 44
- 229910052710 silicon Inorganic materials 0.000 claims description 44
- 239000010703 silicon Substances 0.000 claims description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910003822 SiHCl3 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Definitions
- the present invention relates to a method of heat treating semiconductor single crystal substrates uniformly, and a semiconductor single crystal substrate which is readily capable of being heated uniformly.
- a susceptor containing graphite as a chief material and coated with silicon carbide (SiC) is placed within a silica glass container. Then, semiconductor single crystal substrates are held on the susceptor while the back surface of each substrate is kept in close contact with the susceptor over the entire area thereof.
- the semiconductor single crystal substrates together with the susceptor are heated with radiant light emitted from a radiant heating means, such as an infrared lamp to thereby perform the heat treatment at a desired temperature.
- the susceptor containing graphite as a chief material is often contaminated with metals, and it could be also water contaminated. As the temperature goes up by heating, the contaminants or impurities are released from the susceptor and admixed with a reaction gas or atmosphere. If the impurities were incorporated in the semiconductor single crystal substrates being heat treated, the quality of the semiconductor single crystal substrates would be deteriorated.
- the susceptor when an attempt is made to heat the semiconductor single crystal substrates uniformly over the entire area thereof by the use of the susceptor containing graphite as a chief material, the susceptor is required to have a greater size than the substrates to be heat treated. Since such a great susceptor has a large thermal capacity, it takes a long time to heat the susceptor to the desired temperature. The long heating time, however, affects the productivity and, accordingly, an appropriate improvement is needed.
- the present invention in a first aspect provides a heat treating method wherein at least the back surface of a semiconductor single crystal substrate is directly heated by radiant heating, characterized in that the heating output is controlled according to the reflectivity of the back surface of the semiconductor single crystal substrate.
- the reflectivity of the back surface of each individual semiconductor single crystal substrate to be heat treated in a single wafer heat treatment is measured in advance, and the heating output is increased or decreased in proportion to an increase or a decrease in the reflectivity of the back surface of substrates to be replaced for each individual single wafer heat treatment.
- the semiconductor single crystal substrate may be a silicon substrate in which instance the reflectivity of the back surface of the silicon substrate is variable (increases and decreases) within the range of 33% at maximum.
- the present invention provides a heat treating method wherein at least the back surface of a semiconductor single crystal substrate is directly heated by radiant heating, characterized in that the reflectivity of the back surface of the semiconductor single crystal substrate to be heat treated is kept constant for each substrate.
- a semiconductor single crystal substrate of the present invention is characterized in that the back surface of the substrate has a reflectivity which is lower in a peripheral portion than a central portion of the substrate.
- the semiconductor single crystal substrate may be a silicon substrate, the back surface of said substrate has a reflectivity of 33% at maximum, and the reflectivity decreases in a radial direction of the substrate toward the peripheral portion of the substrate.
- the reflectivity of the semiconductor single crystal substrate can be controlled by adjusting the surface roughness of the substrate. Polishing, lapping, etching or the like surface finishing process may be employed to prepare surfaces of different reflectivities. Different reflectivities can be also provided by a film material, such as an oxide film and a nitride film. When a substrate surface is fully dim or lusterless, the reflectivity of the substrate surface is 0%. On the other hand, when a substrate surface is mirror-finished, the reflectively of the substrate surface is 33%. As a means for controlling the reflectivity of the substrate surface, it is possible to use an oxide film, a nitride film or a polysilicon formed by CVD (chemical vapor deposition).
- CVD chemical vapor deposition
- FIG. 1 is a graph showing the in-plane distribution of substrate temperatures obtained by calculation in the case where the reflectivity of the back surface of a substrate is changed in a virtual heating process of the substrate achieved by a virtual heating apparatus;
- FIG. 2 is a view showing the virtual heating apparatus used to prepare the graph shown in FIG. 1;
- FIG. 3 is a graph similar to FIG. 1, showing the in-plane distribution of substrate temperatures determined when the reflectivity of the back surface of a substrate is decreased in a radial direction toward a peripheral portion of the substrate;
- FIG. 4 is a graph showing the relationship between the reflectivity of the back surface of a silicon single crystal substrate and the range of a temperature change according to Experimental Example 1;
- FIG. 5 is a diagrammatical explanatory view showing a radiant heating apparatus used in Experimental Example 1;
- FIG. 6 is a diagrammatical explanatory view showing an epitaxial growth system used in Examples 1 and 2;
- FIG. 7 is a graph showing the relationship between the reflectivity of the back surface of the silicon single crystal substrate and the range of a change in growth rate of an epitaxial film in Example 1;
- FIG. 8 is a graph showing a variation of growth rate observed when the heating output value is increased and decreased linearly with respect to an increase and a decrease in the reflectivity of the back surface of the silicon single crystal substrate in Example 2, and a variation of growth rate observed when the heating output value is set regardless of the reflectivity of the back surface of the silicon single crystal substrate in Comparative Example 1;
- FIG. 9 is a graph showing one example of the relationship between the position and the reflectivity on the back surface of a substrate having a reflectivity decreasing in a radial direction of the substrate toward a peripheral portion thereof.
- FIG. 1 is prepared on the assumption that a heat treatment is performed while a 300-mm-diameter silicon single crystal substrate W having mirror-finished principal surfaces is disposed at the center of a virtual heating apparatus having a structure and dimensions shown in FIG. 2, and it shows the manner in which the temperature of the substrate varies with the reflectivity of the back surface of the substrate, the manner being determined by calculation based on the intensity of light arrived and the quantity of heat absorbed by the substrate.
- 16 denotes a radiant heating means (such as an infrared lamp), and M denotes a mirror.
- the reflectivity of the back surface of the substrate is changed between 5%, 15%, 25% and 33%.
- a 5% reflectivity represents the condition in which the substrate surface is substantially dim or lusterless, and a 33% reflectivity represents the condition in which the substrate surface forms a perfect mirror surface.
- the ultimate temperature of the substrate varies with the reflectivity of the back surface of the substrate to be heat treated. Accordingly, in order to make the ultimate temperature constant, the reflectivity of the back surface of the substrate to be heat treated is kept constant, or the heating output is controlled according to the reflectivity of the back surface of the substrate.
- FIG. 3 shows the results of a further consideration made on the basis of the results of calculation shown in FIG. 1. More specifically, this Figure shows the in-plane distribution of temperatures of a substrate that can be reached when, as shown in FIG. 9, the back surface of the substrate has a reflectivity of 33% at a central portion extending within the range of 30 mm about the center of the substrate, a varying reflectivity gradually decreasing in a radial direction of the substrate from the central portion toward a peripheral portion of the substrate, and a reflectivity of 5% at the peripheral portion. It is seen from FIG. 3 that the temperature distribution is improved by about 20° C. at the peripheral portion of the substrate, as compared to the case of FIG. 1 in which the reflectivity is set at 33% over the entire area of the back surface of the substrate.
- the surface roughness of the back surface of a silicon single crystal substrate was changed to vary the reflectivity of the back surface of the substrate in the range of from 5 to 33%.
- the silicon single crystal substrate W was heated to about 1,000° C., and the temperature of the silicon single crystal substrate W was measured by thermocouples (not shown) embedded in the silicon single crystal substrate W. The results of this measurement are shown in FIG. 4. From FIG. 4, it is clearly seen that the temperature of the silicon single crystal substrate decreases as the reflectivity of the back surface of the silicon single crystal substrate increases.
- the growth system 12 includes a transparent silica glass container 14.
- Designated by 16 is a radiant heating means (such as an infrared lamp) which is disposed exteriorly of the silica glass container 14 at an upper or a lower side of the container 14 in confronting relation to a similar radiant heating means.
- a radiant heating means such as an infrared lamp
- a silicon single crystal substrate W is mounted within the silica glass container 14 and it is heated from above and below by radiant heat emitted from the oppositely disposed infrared lamps 16.
- a reaction gas 18 consisting of a source gas such as trichlorosilane (SiHCl 3 ) and a carrier gas such as hydrogen is introduced into the silica glass container 14 (from the left on the drawing Figure).
- the reflectivity of the back surface of the silicon single crystal substrate W was changed within the range between 5 and 33%, and a silicon film was epitaxially grown on the silicon single crystal substrate W by using an infrared lamp output which is capable of providing a temperature of 1000° C. when the reflectivity of the back surface of the silicon single crystal substrate W is 5%.
- the reflectivity measurement was done by the use of a spectrophotometer and based on the intensity ratio between standard light and reflected light coming back from the sample (silicon single crystal substrate).
- the reflection to be measured is mirror reflection only, and irregular reflection is excluded from the target of this measurement.
- the necessary reflectivity is a reflectivity at an emission wavelength (about 1 ⁇ m) of the infrared lamps.
- the growth rate was measured during an epitaxial growth process while the heating output was kept constant regardless of a change in the reflectivity.
- the results of this measurement are shown in FIG. 8 together with the results obtained in Example 1. It appears clear from FIG. 8 that as compared to the results obtained when the reflectivity of the back surface of the silicon single crystal substrate W is neglected from consideration (Comparative Example 1), the change or fluctuation of the growth rate can be restricted to a smaller range, as shown in FIG. 8, by taking account of the reflectivity of the back surface of the silicon single crystal substrate W (example 1).
- FIG. 9 in considering the reflectivity of the back surface of the silicon single crystal substrate W, the reflectivity should be intended for use with the wavelength of radiant light emitted from the radiant heating means (infrared lamp, for example). Since the infrared lamp used in Example 1 has a dominant emission wavelength of 1 ⁇ m, a change in the reflectivity of the back surface of the silicon single crystal substrate W at about 1 ⁇ m should be used.
- the radiant heating means infrared lamp, for example.
- semiconductor single crystal substrates being heat treated are able to have a constant ultimate temperature, thereby making it possible to keep a uniform crystal quality throughout the heat treated semiconductor single crystal substrates.
- uniform heating by a radiant heating means can be easily realized.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8-049697 | 1996-03-07 | ||
JP8049697A JPH09246202A (ja) | 1996-03-07 | 1996-03-07 | 熱処理方法および半導体単結晶基板 |
PCT/JP1997/000143 WO1997033306A1 (fr) | 1996-03-07 | 1997-01-23 | Procede de traitement thermique et substrat a semi-conducteur monocristal |
Publications (1)
Publication Number | Publication Date |
---|---|
US5913974A true US5913974A (en) | 1999-06-22 |
Family
ID=12838380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/945,413 Expired - Fee Related US5913974A (en) | 1996-03-07 | 1997-01-23 | Heat treating method of a semiconductor single crystal substrate |
Country Status (5)
Country | Link |
---|---|
US (1) | US5913974A (ko) |
EP (1) | EP0831519A1 (ko) |
JP (1) | JPH09246202A (ko) |
KR (1) | KR980700681A (ko) |
WO (1) | WO1997033306A1 (ko) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6171395B1 (en) * | 1997-12-02 | 2001-01-09 | Wacker Siltronic Gesellschaft f{umlaut over (u)}r Halbleitermaterialien AG | Process and heating device for melting semiconductor material |
US20020137311A1 (en) * | 2000-12-21 | 2002-09-26 | Mattson Technology, Inc. | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
US20030033974A1 (en) * | 2001-07-11 | 2003-02-20 | Tetsuzo Ueda | Layered substrates for epitaxial processing, and device |
US20040018008A1 (en) * | 2000-12-21 | 2004-01-29 | Mattson Technology, Inc. | Heating configuration for use in thermal processing chambers |
US20040149715A1 (en) * | 2002-03-29 | 2004-08-05 | Timans Paul J. | Pulsed processing semiconductor heating methods using combinations of heating sources |
US20070020784A1 (en) * | 2005-07-05 | 2007-01-25 | Mattson Technology, Inc. | Method and system for determining optical properties of semiconductor wafers |
US20100044705A1 (en) * | 2007-03-30 | 2010-02-25 | Robert Langer | Doped substrate to be heated |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6643604B1 (en) | 2000-06-30 | 2003-11-04 | Advanced Micro Devices, Inc. | System for uniformly heating photoresist |
JP4806856B2 (ja) * | 2001-03-30 | 2011-11-02 | 東京エレクトロン株式会社 | 熱処理方法及び熱処理装置 |
JP2006093302A (ja) * | 2004-09-22 | 2006-04-06 | Fujitsu Ltd | 急速熱処理装置及び半導体装置の製造方法 |
JP4712371B2 (ja) | 2004-12-24 | 2011-06-29 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP4864396B2 (ja) * | 2005-09-13 | 2012-02-01 | 株式会社東芝 | 半導体素子の製造方法、及び、半導体素子の製造装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS59169126A (ja) * | 1983-03-16 | 1984-09-25 | Ushio Inc | 半導体ウエハ−の加熱方法 |
JPS6027115A (ja) * | 1983-07-25 | 1985-02-12 | Ushio Inc | 光照射炉による半導体ウエハ−の熱処理法 |
JPS60137027A (ja) * | 1983-12-26 | 1985-07-20 | Ushio Inc | 光照射加熱方法 |
US4738935A (en) * | 1985-02-08 | 1988-04-19 | Kabushiki Kaisha Toshiba | Method of manufacturing compound semiconductor apparatus |
JPH03278524A (ja) * | 1990-03-28 | 1991-12-10 | Nec Corp | 半導体基板加熱装置 |
-
1996
- 1996-03-07 JP JP8049697A patent/JPH09246202A/ja active Pending
-
1997
- 1997-01-23 EP EP97900760A patent/EP0831519A1/en not_active Withdrawn
- 1997-01-23 KR KR1019970704185A patent/KR980700681A/ko not_active Application Discontinuation
- 1997-01-23 US US08/945,413 patent/US5913974A/en not_active Expired - Fee Related
- 1997-01-23 WO PCT/JP1997/000143 patent/WO1997033306A1/ja not_active Application Discontinuation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59169126A (ja) * | 1983-03-16 | 1984-09-25 | Ushio Inc | 半導体ウエハ−の加熱方法 |
JPS6027115A (ja) * | 1983-07-25 | 1985-02-12 | Ushio Inc | 光照射炉による半導体ウエハ−の熱処理法 |
JPS60137027A (ja) * | 1983-12-26 | 1985-07-20 | Ushio Inc | 光照射加熱方法 |
US4738935A (en) * | 1985-02-08 | 1988-04-19 | Kabushiki Kaisha Toshiba | Method of manufacturing compound semiconductor apparatus |
JPH03278524A (ja) * | 1990-03-28 | 1991-12-10 | Nec Corp | 半導体基板加熱装置 |
Cited By (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6171395B1 (en) * | 1997-12-02 | 2001-01-09 | Wacker Siltronic Gesellschaft f{umlaut over (u)}r Halbleitermaterialien AG | Process and heating device for melting semiconductor material |
US8669496B2 (en) | 2000-12-21 | 2014-03-11 | Mattson Technology, Inc. | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
US20040018008A1 (en) * | 2000-12-21 | 2004-01-29 | Mattson Technology, Inc. | Heating configuration for use in thermal processing chambers |
US7015422B2 (en) | 2000-12-21 | 2006-03-21 | Mattson Technology, Inc. | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
US7949237B2 (en) | 2000-12-21 | 2011-05-24 | Mattson Technology, Inc. | Heating configuration for use in thermal processing chambers |
US8222570B2 (en) | 2000-12-21 | 2012-07-17 | Mattson Technology, Inc. | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
US20050213949A1 (en) * | 2000-12-21 | 2005-09-29 | Zion Koren | Heating configuration for use in thermal processing chambers |
US20110222840A1 (en) * | 2000-12-21 | 2011-09-15 | Zion Koren | Heating Configuration For Use in Thermal Processing Chambers |
US20020137311A1 (en) * | 2000-12-21 | 2002-09-26 | Mattson Technology, Inc. | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
US20090098742A1 (en) * | 2000-12-21 | 2009-04-16 | Mattson Technology, Inc. | System and Process for Heating Semiconductor Wafers by Optimizing Absorption of Electromagnetic Energy |
US6970644B2 (en) | 2000-12-21 | 2005-11-29 | Mattson Technology, Inc. | Heating configuration for use in thermal processing chambers |
US20080050688A1 (en) * | 2000-12-21 | 2008-02-28 | Mattson Technology, Inc. | System and Process for Heating Semiconductor Wafers by Optimizing Absorption of Electromagnetic Energy |
US7847218B2 (en) | 2000-12-21 | 2010-12-07 | Mattson Technology, Inc. | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
US7269343B2 (en) | 2000-12-21 | 2007-09-11 | Mattson Technology, Inc. | Heating configuration for use in thermal processing chambers |
US20070297775A1 (en) * | 2000-12-21 | 2007-12-27 | Zion Koren | Heating Configuration for Use in Thermal Processing Chambers |
US7198671B2 (en) * | 2001-07-11 | 2007-04-03 | Matsushita Electric Industrial Co., Ltd. | Layered substrates for epitaxial processing, and device |
US20030033974A1 (en) * | 2001-07-11 | 2003-02-20 | Tetsuzo Ueda | Layered substrates for epitaxial processing, and device |
US20080008460A1 (en) * | 2001-11-07 | 2008-01-10 | Timans Paul J | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
US7453051B2 (en) | 2001-11-07 | 2008-11-18 | Mattson Technology, Inc. | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
US20050236395A1 (en) * | 2002-03-29 | 2005-10-27 | Timans Paul J | Pulsed processing semiconductor heating methods using combinations of heating sources |
US6849831B2 (en) | 2002-03-29 | 2005-02-01 | Mattson Technology, Inc. | Pulsed processing semiconductor heating methods using combinations of heating sources |
US8837923B2 (en) | 2002-03-29 | 2014-09-16 | Mattson Technology, Inc. | Pulsed processing semiconductor heating methods using combinations of heating sources |
US7317870B2 (en) | 2002-03-29 | 2008-01-08 | Mattson Technology, Inc. | Pulsed processing semiconductor heating methods using combinations of heating sources |
US20040149715A1 (en) * | 2002-03-29 | 2004-08-05 | Timans Paul J. | Pulsed processing semiconductor heating methods using combinations of heating sources |
US8000587B2 (en) | 2002-03-29 | 2011-08-16 | Mattson Technology, Inc. | Pulsed processing semiconductor heating methods and associated system using combinations of heating sources |
US6951996B2 (en) | 2002-03-29 | 2005-10-04 | Mattson Technology, Inc. | Pulsed processing semiconductor heating methods using combinations of heating sources |
US20110236844A1 (en) * | 2002-03-29 | 2011-09-29 | Timans Paul J | Pulsed processing semiconductor heating methods using combinations of heating sources |
US20080069550A1 (en) * | 2002-03-29 | 2008-03-20 | Timans Paul J | Pulsed Processing Semiconductor Heating Methods using Combinations of Heating Sources |
US8152365B2 (en) | 2005-07-05 | 2012-04-10 | Mattson Technology, Inc. | Method and system for determining optical properties of semiconductor wafers |
US20070020784A1 (en) * | 2005-07-05 | 2007-01-25 | Mattson Technology, Inc. | Method and system for determining optical properties of semiconductor wafers |
US8696197B2 (en) | 2005-07-05 | 2014-04-15 | Mattson Technology, Inc. | Method and system for determining optical properties of semiconductor wafers |
US8198628B2 (en) * | 2007-03-30 | 2012-06-12 | Soitec | Doped substrate to be heated |
US20100044705A1 (en) * | 2007-03-30 | 2010-02-25 | Robert Langer | Doped substrate to be heated |
Also Published As
Publication number | Publication date |
---|---|
WO1997033306A1 (fr) | 1997-09-12 |
EP0831519A1 (en) | 1998-03-25 |
JPH09246202A (ja) | 1997-09-19 |
KR980700681A (ko) | 1998-03-30 |
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