US5679483A - Embedded phase shifting photomasks and method for manufacturing same - Google Patents

Embedded phase shifting photomasks and method for manufacturing same Download PDF

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Publication number
US5679483A
US5679483A US08/359,790 US35979094A US5679483A US 5679483 A US5679483 A US 5679483A US 35979094 A US35979094 A US 35979094A US 5679483 A US5679483 A US 5679483A
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Prior art keywords
mask blank
substrate
photomask
regions
mask
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US08/359,790
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English (en)
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Wilhelm Maurer
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Qimonda AG
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Siemens AG
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Priority to US08/359,790 priority Critical patent/US5679483A/en
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Assigned to SIEMENS COMPONENTS, INC. reassignment SIEMENS COMPONENTS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MAURER, WILHELM
Assigned to SIEMENS AKTIENGESELLSCHAFT reassignment SIEMENS AKTIENGESELLSCHAFT ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SIEMENS COMPONENTS, INC.
Priority to TW084110855A priority patent/TW295678B/zh
Priority to AT95116582T priority patent/ATE182411T1/de
Priority to DE69510902T priority patent/DE69510902T2/de
Priority to EP95116582A priority patent/EP0718691B1/de
Priority to JP32901195A priority patent/JP3205241B2/ja
Priority to KR1019950052442A priority patent/KR100374207B1/ko
Publication of US5679483A publication Critical patent/US5679483A/en
Application granted granted Critical
Assigned to INFINEON TECHNOLOGIES AG reassignment INFINEON TECHNOLOGIES AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SIEMENS AKTIENGESELLSCHAFT
Assigned to QIMONDA AG reassignment QIMONDA AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: INFINEON TECHNOLOGIES AG
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof

Definitions

  • the present invention relates to the field of semiconductor manufacture and more particularly to a phase shifting photomask for use in photolithography.
  • photolithography utilizes a beam of light, such as ultraviolet (UV) waves, to transfer a pattern from a photolithographic mask onto a photoresist coating through an imaging lens.
  • the mask includes opaque and transparent regions such that the shapes in the openings of the photoresist match a desired predetermined pattern.
  • phase shifting lithography One technique currently being used for improving the resolution of the photolithographic process is known as phase shifting lithography.
  • phase shift lithography the interference of light rays is used to overcome diffraction and improve the resolution and depth of focus of optical images projected onto a target.
  • phase shift lithography the phase of the exposure light at an object is controlled such that the adjacent areas are formed preferably 180° out of phase with one another.
  • the contrast at the border of those areas is enhanced, even when diffraction would have otherwise caused the contrast to degrade.
  • This technique improves total resolution at the object and allows for very fine resolutions to occur.
  • phase shifting masks have been widely used to enhance the processes of optical lithography.
  • phase shift masks there are four major types of phase shift masks (with countless subtypes):
  • Alternating phase shift masks where the phase difference is between adjacent openings in a photomask. These openings are separated by regions of opaque material. Alternating phase shift masks have special design constraints, since the contrast enhancement works only between areas being preferably 180° out of phase with each other.
  • Shifter only or phase edge shift masks where the pattern to be enhanced is defined by the border between openings being preferably 180° out of phase with each other without any absorbing areas in between.
  • the 180° phase step prints (for example into positive resist) a dark line.
  • the width of that line is given by the optical and process parameters of the equipment used. Special design strategies have to be applied to generate lines of different width on the same exposure.
  • Rim phase shift masks where a preferably 180° phase step at the edge of an opening is formed. This phase step enhances the contrast at the border of that opening.
  • the distance between the phase step and the edge of the opening is very critical. In general, for every opening size, a different distance is optimum.
  • Embedded phase shift masks where the pattern to be printed is defined by openings in an absorbing layer--similar to conventional (binary) photomasks. Contrary to conventional photomasks, the absorbing layer does not absorb all radiation used in the printing process completely, but transmits a defined amount of that radiation (typically in the range between 3% and 20%). Between the radiation transmitted through the absorber and the radiation transmitted by the mask openings is a phase shift of preferably 180°. This phase shift enhances the contrast at the pattern edge. Besides much simpler manufacturing, embedded phase shift masks can be designed using the same routines and manufactured using the same design data as conventional photomasks (one layer only). The only correction necessary is a difference in the size of the openings (bias). Because of these advantages, embedded phase shift masks are by far closest to be used in high volume production of semiconductor devices.
  • a first method uses an absorbing layer on a mask blank to modify the intensity of the optical radiation, and another layer that is either etched into the mask blank or deposited onto the mask blank to modify the phase of the optical radiation.
  • a second method combines both the intensity modulation and the phase shifting into a single layer. Both of these methods, however, generate a non-uniform surface topography on the final photomask.
  • This non-uniform surface topography may scatter the optical radiation in a way that some or all of the advantages of using such a phase shift mask are lost.
  • non-uniform surface topography and the fact that multiple layers of different materials are deposited on the mask may lead to problems at mask cleaning. That is, unwanted particulates have a higher chance to adhere, and adhere with a higher force on an uneven surface topography.
  • the layers of different materials can restrict the use of efficient cleaning procedures and chemicals.
  • phase shifting photomask is fabricated by means of a structured modification to the surface of a mask blank suitable for photolithography. Ion implantation, diffusion or similar processes are used to alter the optical properties of selected areas of a mask blank in such a way that these areas modify the intensity and phase of optical radiation transmitted through the processed areas of the mask blank substrate relative to the unprocessed areas.
  • Use of photomasks manufactured in accordance with the present invention method enhances the resolution and process window, for example, depth of focus and/or exposure latitude of the lithographic process.
  • the present invention provides the intended phase and intensity modulation by modification of a surface layer or other layer which is close to the surface of the mask blank. This leaves the actual surface of the mask blank intact and smooth without chemical changes to the surface of the mask blank. In this way optical radiation is not scattered on the borders of different materials, and unwanted particulates will have a lower chance of adhering to a smooth surface with little or no topography. If particulates do adhere on such a surface, they will adhere with lower binding forces that enables easier cleaning. It is therefore possible to produce masks with lower defect density, that are easier to clean than other prior art phase shift masks.
  • phase shifting mask produced by the described method may be cleaned using the same harsh procedures that are used to clean mask blanks before material deposition, such as, oxidizing hot sulfuric acid, etc.
  • FIG. 1A illustrates a first step in fabrication of the present invention embedded phase shifting photomask
  • FIG. 1B shows an intermediate step in the production of the present invention phase shifting photomask
  • FIG. 1C shows a final step in the manufacturing process and illustrates a first preferred embodiment of the present invention phase shifting photomask
  • FIG. 2 shows a second preferred embodiment and techniques for manufacturing the present invention phase shifting photomask
  • FIG. 3 shows a second preferred embodiment and techniques for manufacturing the present invention phase shifting photomask.
  • the present invention is an embedded phase shifting photomask wherein the substrate of a mask blank is modified in such a way that the surface topography of the substrate remains essentially unchanged. Modification can take place by means of ion implantation or diffusion which allows the masks to be produced with a lower defect density while at the same time being easier to clean than other finished masks of that kind.
  • the mask blank 12 which is processed in accordance with the present embedded phase shifting photomask invention.
  • the mask blank 12 will be formed from a substantially transparent substrate such as quartz. Quartz is a highly purified glass having optical properties suitable for use in photolithography. Quartz is also well known for other characteristics which prove useful in semiconductor manufacturing, such as inherent stability at high temperatures, cleanliness, as well as ease of being cleaned. Quartz is also highly transparent in the UV (ultraviolet) region and, therefore, is typically utilized as a mask material in systems using photolithography. It will be understood, however, that the mask blank 12 may be formed of any other suitable material having the desired optical and mechanical characteristics used in photolithography.
  • the material used for the masking layer 14 may be a photoresist, dielectric or metallic layer depending on the methodology used to modify the mask blank 12. For example, a photoresist may be used as a masking layer for ion implantation and a dielectric or metallic layer may be used for ion implantation or diffusion at elevated temperatures. It will be understood that the masking layer will be selectively applied to the mask blank 12 to leave multiple masked and exposed regions representative of the desired circuit pattern.
  • FIG. 1B there is shown an intermediate representation of the present invention embedded phase shifting photomask 10.
  • the selectively masked blank substrate 12 is shown to be processed wherein the exposed region 16 is modified to alter the optical characteristics of the selected regions of the mask blank left unmasked. Modification of the mask blank 12 can be accomplished by means of ion implantation or diffusion, as will be explained. In ion implantation, the mask blank 12 is subjected to high voltage ion bombardment with ion dopants 18. The ion dopants form a modified area 20 in the exposed region 16 between the masking layer 14. The modified area 20 functions to alter the optical characteristics of the mask blank 12, wherein light transmitted through the modified regions will experience a phase shift and absorption relative to the unaffected areas of the substrate.
  • Ion implantation processes are well known in the art of semiconductor manufacturing.
  • ion implantation forms a specific concentration and distribution of dopant atoms in a selected region of a substrate. This alters the chemical structure and physical characteristics of the substrate or mask blank 12 in the ion implant area.
  • the dopant concentration and distribution achieves a change in the index of refraction of the mask blank 12 to provide a 180° phase shift at the wavelength of exposure and a transmission loss of 4% to 20% (due either to absorption or reflection) at the wavelength of exposure.
  • the modification of the mask blank substrate 12 may also be carried out by means of a diffusion process.
  • the diffusion process is a widely used method of introducing a controlled amount of impurity into a substrate.
  • there are two types of diffusion processes used in semiconductor manufacturing i.e., constant-source diffusion and limited-source or Gaussian diffusion.
  • constant-source diffusion the impurity or dopant concentration at the substrate surface is maintained at a constant level throughout the diffusion cycle.
  • the constant impurity level on the surface is determined by the temperature and the carrier-gas flow rate of the diffusion furnace.
  • the total amount of impurity introduced into the substrate during diffusion is limited. This is achieved by depositing a fixed number of impurity atoms per unit of exposed surface area of the substrate during a short "predeposition” step before the actual diffusion. This predeposition cycle is then followed by a "drive-in cycle", where the impurity already deposited during the predeposition step is diffused into the substrate. Each of these diffusion processes changes the optical characteristics and refractive index of the substrate as with the ion implantation.
  • the change in the refractive index in the modified area 20 may be achieved by closely controlling the ion implantation process and diffusion processes by techniques that are known in the art. By closely controlling the process parameters, such as, implantation energy, annealing procedures and diffusion temperatures, the intended phase and intensity modulation can be achieved in a surface portion or portion that is close to the surface of the substrate, while at the same time leaving the actual surface of the mask blank intact and smooth.
  • the implantation and diffusion may be performed on suitable ion implantation and diffusion equipment used in the semiconductor manufacturing industry.
  • the dopant ions and (impurity) atoms may be any suitable substances which modify the optical characteristics of the mask blank substrate 12, such as for example, Boron and Phosphorus.
  • Other dopant materials may include, but are not limited to Aluminum, Gallium, Indium, Arsenic and Antimony.
  • phase shifting photomask 10 there is shown a final representation of the present invention embedded phase shifting photomask 10.
  • the completed phase shifting photomask 10 has the masking layer 14 stripped away from the mask blank 12.
  • the mask blank 12 After stripping the mask layer 14, the mask blank 12 consists of an unmodified area 22 and the modified area 20.
  • FIG. 1C it can be seen that by carefully controlling the process parameters of the ion implantation, diffusion, or other process, it is possible to get an unchanged surface 24 of the mask blank 12 even within the exposed process area 16.
  • the modified area 20 actually becomes embedded underneath the surface 24 of the mask blank 12, leaving a small unmodified region 26 between the surface 24 of the mask blank 12 and the modified area 16.
  • This surface volume can be shallow enough not to alter the optical properties of the mask 12, but deep enough to expose only blank material to the surrounding environment.
  • Proper control of the process parameters, i.e., diffusion temperatures, implantation strategies and/or annealing procedures, also allows the transition areas between the modified area 20 and unmodified areas 22 of the mask blank 12 to be tailored to minimize parasitical effects.
  • phase shift mask wherein the modified phase shifting region 20 is actually embedded underneath the surface of the mask blank substrate 12
  • the surface topography of the mask will be essentially unchanged and remain smooth. In this way optical radiation is not scattered on the borders of different materials and unwanted particulates will have a lower chance of adhering to a smooth surface with little or no topography. If particulates do adhere on such a surface, they will adhere with lower binding forces that enables easier cleaning. It is therefore possible to produce masks with lower defect density, that are easier to clean than other prior art phase shift masks.
  • phase shifting photomask 10 essentially retains the chemical properties of the mask blank 12 above the modified area 20
  • a finished phase shifting mask produced by the described method may be cleaned using the same harsh procedures that are used to clean mask blanks 12 before material deposition, such as, oxidizing hot sulfuric acid. Accordingly, the manufacturing efficiency is increased, since the mask blanks may be cleaned more easily and more thoroughly.
  • the modified areas 20 of the mask blank 12 are characterized by an index of refraction that is different from the index of refraction of the mask blank substrate 12 and characterized by an optical transmission that is different from the optical transmission of the mask blank substrate.
  • the relative difference in the index of refraction provides a phase shift of 180° between the light passing through a modified region 20 and light passing through any other portion of the transparent mask blank 12.
  • the optical transmission of the modified area 20 is 4% to 20% of the optical transmission of any other portion of the transparent mask blank 12.
  • FIG. 2 there is shown a second preferred embodiment of an embedded phase shifting photomask 40, which is manufactured in accordance with the present invention.
  • the photomask 40 includes a mask blank 42 and a modified area 46, wherein the modified area 46 is produced by exposure of the substrate to an incoming scanning ion beam 48.
  • the surface of the mask blank 42 is modified by scanning a focused beam of ions over the areas intended to be modified.
  • the ion beam is initially focused at the start of the modified area 45 and is gradually transitioned across the area to be modified until a desired patterned area is implanted with ions.
  • the photomask 60 includes a mask blank 62 and modified areas 66, however, in this case the modified areas are produced by means of an incoming patterned ion beam 68.
  • the patterned ion beam can be either a masked ion beam or a beam produced by ion projection. In either case the patterned ion beam allows accurate implantation of ions into selected areas of the mask blank 62 and use thereof may also eliminate the step of masking prior to implantation of the ions.
  • the modified areas 46,66 can be placed at a shallow depth below the surface of the mask blank, as was described with reference to FIG. 1C. This essentially leaves the processed surface of the mask unchanged, producing significant advantages over the prior art as have been explained. It will also be understood that depending on the application, it may be necessary to mask the blank substrate 42,62 prior to ion implantation as has been previously described.
US08/359,790 1994-12-20 1994-12-20 Embedded phase shifting photomasks and method for manufacturing same Expired - Lifetime US5679483A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US08/359,790 US5679483A (en) 1994-12-20 1994-12-20 Embedded phase shifting photomasks and method for manufacturing same
TW084110855A TW295678B (de) 1994-12-20 1995-10-16
AT95116582T ATE182411T1 (de) 1994-12-20 1995-10-20 Eingebettete phasenverschiebungsmasken sowie verfahren zu dessen herstellung
EP95116582A EP0718691B1 (de) 1994-12-20 1995-10-20 Eingebettete Phasenverschiebungsmasken sowie Verfahren zu dessen Herstellung
DE69510902T DE69510902T2 (de) 1994-12-20 1995-10-20 Eingebettete Phasenverschiebungsmasken sowie Verfahren zu dessen Herstellung
JP32901195A JP3205241B2 (ja) 1994-12-20 1995-12-18 光学リソグラフイーで使用するための移相フォトマスクの製造方法及び移相フォトマスク
KR1019950052442A KR100374207B1 (ko) 1994-12-20 1995-12-20 내장된위상이동포토마스크및제조방법

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Application Number Priority Date Filing Date Title
US08/359,790 US5679483A (en) 1994-12-20 1994-12-20 Embedded phase shifting photomasks and method for manufacturing same

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US5679483A true US5679483A (en) 1997-10-21

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US (1) US5679483A (de)
EP (1) EP0718691B1 (de)
JP (1) JP3205241B2 (de)
KR (1) KR100374207B1 (de)
AT (1) ATE182411T1 (de)
DE (1) DE69510902T2 (de)
TW (1) TW295678B (de)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5897976A (en) * 1996-05-20 1999-04-27 E. I. Du Pont De Nemours And Company Attenuating embedded phase shift photomask blanks
US6007950A (en) * 1998-05-01 1999-12-28 United Microelectronics Corp Structure of a phase shifting mask and method of fabricating the same
US6468700B1 (en) * 1999-01-12 2002-10-22 Nikon Corporation Transfer mask blanks and transfer masks exhibiting reduced distortion, and methods for making same
US6555484B1 (en) * 1997-06-19 2003-04-29 Cypress Semiconductor Corp. Method for controlling the oxidation of implanted silicon
US6566016B1 (en) * 2000-06-28 2003-05-20 Koninklijke Philips Electronics N.V. Apparatus and method for compensating critical dimension deviations across photomask
US20030157415A1 (en) * 2000-02-16 2003-08-21 Ziger David H. Apparatus and method for compensating critical dimension deviations across photomask
US20040241554A1 (en) * 2003-05-29 2004-12-02 Lsi Logic Corporation, Milpitas, Ca Ion implantation phase shift mask
US6841311B1 (en) * 2002-03-15 2005-01-11 Taiwan Semiconductor Manufacturing Company Cleaning process for phase shift masks
US20050170261A1 (en) * 2004-02-02 2005-08-04 International Business Machines Corporation Common second level frame exposure for embedded attenuated phase shift masks
CN115755517A (zh) * 2022-11-18 2023-03-07 上海积塔半导体有限公司 掩模装置及其制造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10131534B4 (de) * 2001-06-29 2007-07-19 Infineon Technologies Ag Verfahren zum Herstellen einer Maske zum Belichten
KR100393230B1 (ko) * 2001-08-16 2003-07-31 삼성전자주식회사 잔막율을 조절할 수 있는 포토레지스트 패턴의 형성방법
CN114859651A (zh) * 2022-07-05 2022-08-05 上海传芯半导体有限公司 反射型掩模基板及制备方法、反射型掩模版及制备方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE31220E (en) * 1977-11-30 1983-04-26 Ppg Industries, Inc. Electromigration method for making stained glass photomasks
US4686162A (en) * 1983-03-01 1987-08-11 Osterreichisches Forschungszentrum Seibersdorf Ges, Mbh Optically structured filter and process for its production
US4902899A (en) * 1987-06-01 1990-02-20 International Business Machines Corporation Lithographic process having improved image quality
US5087535A (en) * 1986-02-28 1992-02-11 Sharp Kabushiki Kaisha Method of manufacturing photo-mask and photo-mask manufactured thereby
US5134015A (en) * 1989-10-13 1992-07-28 Kabushiki Kaisha Toshiba Aperture pattern-printing plate for shadow mask and method for manufacturing the same
US5208125A (en) * 1991-07-30 1993-05-04 Micron Technology, Inc. Phase shifting reticle fabrication using ion implantation
US5217830A (en) * 1991-03-26 1993-06-08 Micron Technology, Inc. Method of fabricating phase shifting reticles using ion implantation
US5260150A (en) * 1987-09-30 1993-11-09 Sharp Kabushiki Kaisha Photo-mask with light shielding film buried in substrate
US5300379A (en) * 1992-08-21 1994-04-05 Intel Corporation Method of fabrication of inverted phase-shifted reticle

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE31220E (en) * 1977-11-30 1983-04-26 Ppg Industries, Inc. Electromigration method for making stained glass photomasks
US4686162A (en) * 1983-03-01 1987-08-11 Osterreichisches Forschungszentrum Seibersdorf Ges, Mbh Optically structured filter and process for its production
US5087535A (en) * 1986-02-28 1992-02-11 Sharp Kabushiki Kaisha Method of manufacturing photo-mask and photo-mask manufactured thereby
US4902899A (en) * 1987-06-01 1990-02-20 International Business Machines Corporation Lithographic process having improved image quality
US5260150A (en) * 1987-09-30 1993-11-09 Sharp Kabushiki Kaisha Photo-mask with light shielding film buried in substrate
US5134015A (en) * 1989-10-13 1992-07-28 Kabushiki Kaisha Toshiba Aperture pattern-printing plate for shadow mask and method for manufacturing the same
US5217830A (en) * 1991-03-26 1993-06-08 Micron Technology, Inc. Method of fabricating phase shifting reticles using ion implantation
US5208125A (en) * 1991-07-30 1993-05-04 Micron Technology, Inc. Phase shifting reticle fabrication using ion implantation
US5300379A (en) * 1992-08-21 1994-04-05 Intel Corporation Method of fabrication of inverted phase-shifted reticle

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Nakajima et al ( Tetenuated phase shifting mask with a single layer absorptive shifter of CrO, CrON, MoSiO and MoSiON film , SPIE Meeting Mar. 27, 1994, Paper No. 2197 10). *
Nakajima et al ("Tetenuated phase-shifting mask with a single-layer absorptive shifter of CrO, CrON, MoSiO and MoSiON film", SPIE Meeting Mar. 27, 1994, Paper No. 2197-10).

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5897976A (en) * 1996-05-20 1999-04-27 E. I. Du Pont De Nemours And Company Attenuating embedded phase shift photomask blanks
US6555484B1 (en) * 1997-06-19 2003-04-29 Cypress Semiconductor Corp. Method for controlling the oxidation of implanted silicon
US6007950A (en) * 1998-05-01 1999-12-28 United Microelectronics Corp Structure of a phase shifting mask and method of fabricating the same
US6468700B1 (en) * 1999-01-12 2002-10-22 Nikon Corporation Transfer mask blanks and transfer masks exhibiting reduced distortion, and methods for making same
US20030157415A1 (en) * 2000-02-16 2003-08-21 Ziger David H. Apparatus and method for compensating critical dimension deviations across photomask
US6566016B1 (en) * 2000-06-28 2003-05-20 Koninklijke Philips Electronics N.V. Apparatus and method for compensating critical dimension deviations across photomask
US6841311B1 (en) * 2002-03-15 2005-01-11 Taiwan Semiconductor Manufacturing Company Cleaning process for phase shift masks
US20040241554A1 (en) * 2003-05-29 2004-12-02 Lsi Logic Corporation, Milpitas, Ca Ion implantation phase shift mask
US20050170261A1 (en) * 2004-02-02 2005-08-04 International Business Machines Corporation Common second level frame exposure for embedded attenuated phase shift masks
US7276316B2 (en) * 2004-02-02 2007-10-02 International Business Machines Corporation Common second level frame exposure methods for making embedded attenuated phase shift masks
CN115755517A (zh) * 2022-11-18 2023-03-07 上海积塔半导体有限公司 掩模装置及其制造方法
CN115755517B (zh) * 2022-11-18 2024-04-26 上海积塔半导体有限公司 掩模装置及其制造方法

Also Published As

Publication number Publication date
DE69510902T2 (de) 2000-02-17
EP0718691B1 (de) 1999-07-21
JPH08240902A (ja) 1996-09-17
JP3205241B2 (ja) 2001-09-04
TW295678B (de) 1997-01-11
EP0718691A2 (de) 1996-06-26
EP0718691A3 (de) 1996-10-30
ATE182411T1 (de) 1999-08-15
DE69510902D1 (de) 1999-08-26
KR100374207B1 (ko) 2004-05-10

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