US5604835A - Integrated optical waveguide device - Google Patents

Integrated optical waveguide device Download PDF

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Publication number
US5604835A
US5604835A US08/361,681 US36168194A US5604835A US 5604835 A US5604835 A US 5604835A US 36168194 A US36168194 A US 36168194A US 5604835 A US5604835 A US 5604835A
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Prior art keywords
optical
substrate
optical waveguide
trench
area
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US08/361,681
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Tohru Nakamura
Tomonori Tanoue
Takeshi Kato
Mitsuo Takeda
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Hitachi Ltd
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Hitachi Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/125—Bends, branchings or intersections
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements

Definitions

  • the present invention relates to an optical waveguide suitable for information transmission between internal portions of a semiconductor integrated circuit (an IC) and an optoelectronic-integrated circuit (an OE-IC) and between the ICs and the OE-ICs.
  • an IC semiconductor integrated circuit
  • an OE-IC optoelectronic-integrated circuit
  • a device including semiconductor integrated circuits and optoelectronic-integrated circuits is, in general, constructed in such a way that semiconductor devices and optical devices are integrated on a semiconductor substrate and lines made of a metallic thin film are distributed between those devices. Out of them, the semiconductor devices and the optical devices perform functions such as a signal amplification, light emission and light reception, and the wiring is used to connect/transmit signals output from those devices to the associated devices.
  • the speed of the signal which is propagated through the wiring area connecting the semiconductor devices and the optical devices with each other is remarkably slower than the signal speed (it is also referred to as the switching speed) of the signal which is processed in the semiconductor devices and the optical devices.
  • the switching speed the signal speed of the signal which is processed in the semiconductor devices and the optical devices.
  • a high speed bipolar LSI large scale integrated circuit
  • analyzing the signal speed with respect to the typical logical circuit about 70% of the speed delay is due to the metallic wiring. Therefore, reducing the signal delay associated with the metallic wiring is required for the key technology for manufacturing such a high speed LSI.
  • FIG. 2 shows structure of an optical waveguide used in the conventional OE-IC and the like.
  • an optical waveguide is formed by depositing an area 3 as a wiring portion, through which the light is propagated, on a substrate 1 such as a semiconductor substrate.
  • the area 3 has a thickness and width which are in cross section several ⁇ m and several tens ⁇ m, respectively, and thus the transverse size (the width) is larger than the thickness.
  • the width of the optical waveguide is made smaller to have the size near the wavelength of the light, the incidence of the optical signal becomes impossible and also the light is diffused to the periphery during the propagation thereof through the optical waveguide so that the optical waveguide can not serve as the optical signal propagating line.
  • the transverse size of the optical waveguide depends on the processing size of a trench.
  • the width of the optical waveguide is made smaller to have the size near the wavelength of the light, the incidence of the optical signal becomes impossible due to the small dispersion in the processing size, and also the light is diffused to the periphery during the propagation thereof through the optical waveguide so that the optical waveguide can not serve as the signal propagating line.
  • the optical waveguide of the conventional type structure shown in FIG. 2 even if for the purpose of attaining the high speed operation, the optical signal is used in the integrated circuit, since the width of the optical waveguide is large, it is impossible to increase the integration.
  • the transverse size of the optical waveguide depends on the processing size of the trench. Therefore, if for the purpose of increasing the integration, the width of the optical waveguide is made smaller to have the size near the wavelength of the light, the incidence of the optical signal becomes impossible due to the small dispersion in the processing size.
  • the light is diffused to the periphery during the propagation thereof through the optical waveguide so that the optical waveguide of interest can not serve as the signal propagating line.
  • the thickness of the optical waveguide (it is defined as the thickness perpendicular to the main surface of the substrate) is not set to the sufficiently large value, the propagation speed of the light in the optical waveguide is decreased thus serving as an obstacle to the promotion of high-speed operation.
  • the width and the thickness of the optical waveguide depend on the width and the depth of the trench, respectively.
  • the above-mentioned objects of the present invention are attained either by providing one optical waveguide in the form of projection on a substrate or in a trench in the substrate, or by providing optical waveguides in the form of symmetric structure on both the side faces of a projection or a trench.
  • a distance between the both side faces of an optical waveguide and sidewalls of a trench can be set arbitrarily. That is, the width of the optical waveguide, i.e., the transverse size thereof can be determined independently of the processing size of the trench. Therefore, even if in order to increase the integration, the width of the optical waveguide is made smaller to have the size near the wavelength of the light, the optical waveguide can be readily formed having the uniform width irrespective of the dispersion in the processing width of the trench.
  • the difficult trench processing is made unnecessary in which the trench depth is required to be large in relation to the trench width.
  • the waveguides are formed on the both side faces of one trench or one projection, whereby two optical waveguides can be formed per trench or projection. Therefore, the promotion of the high density can be readily attained, and also a pair of symmetric optical waveguides can be readily formed.
  • the signals in which the differential timing is synchronized with each other can be propagated therethrough.
  • a silicon nitride film is employed as a core material and a silicon oxide film is employed as a clad material surrounding the core.
  • a silicon nitride film is employed as a core material and a silicon oxide film is employed as a clad material surrounding the core.
  • any combination of such materials may also be used, as long as the refractive index of the core material is larger than that of the clad material.
  • FIG. 1 is a cross sectional view showing structure of an optical waveguide of a first embodiment according to the present invention
  • FIG. 2 is a perspective view showing structure of the conventional optical waveguide
  • FIG. 3 is a cross sectional view showing a process of manufacturing the optical waveguide of the first embodiment according to the present invention
  • FIG. 4 is a cross sectional view showing a process of manufacturing the optical waveguide of the first embodiment according to the present invention.
  • FIG. 5 is a cross sectional view showing a process of manufacturing the optical waveguide of the first embodiment according to the present invention.
  • FIG. 6 is a cross sectional view showing a process of manufacturing the optical waveguide of the first embodiment according to the present invention.
  • FIG. 7 is a cross sectional view showing a process of manufacturing the optical waveguide of the first embodiment according to the present invention.
  • FIG. 8 is a cross sectional view showing a process of manufacturing the optical waveguide of the first embodiment according to the present invention.
  • FIG. 9 is a cross sectional view showing a process of manufacturing the optical waveguide of the first embodiment according to the present invention.
  • FIG. 10 is a cross sectional view of structure of an optical waveguide useful in explaining a second embodiment according to the present invention.
  • FIG. 11 is a plan view showing structure of the optical waveguide of the second embodiment according to the present invention.
  • FIG. 12 is a cross sectional view showing structure of an optical waveguide of a third embodiment according to the present invention.
  • FIG. 13 is a cross sectional view showing structure of an applied example of the third embodiment according to the present invention.
  • FIGS. 14A to 14D are cross sectional views showing steps of a manufacturing process of the optical waveguide of the third embodiment, shown in FIG. 13, according to the present invention.
  • FIG. 15 is a view useful in explaining the minimum size of the optical waveguide of the present invention.
  • FIG. 16 is a cross sectional view showing structure of an optical waveguide of a fourth embodiment according to the present invention.
  • FIG. 17 is a cross sectional view showing structure of an optical waveguide of a fifth embodiment according to the present invention.
  • FIG. 18 is a cross sectional view showing structure of an optical waveguide of a sixth embodiment according to the present invention.
  • FIG. 19 is a view useful in explaining an eighth embodiment according to the present invention.
  • FIG. 20 is a block diagram showing a configuration of a computer system of a ninth embodiment according to the present invention.
  • FIGS. 21A to 21C are block diagrams useful in explaining connection between the optical waveguide(s) of the present invention, and a photosensitive device and a light emitting device;
  • FIG. 22A is a view useful in explaining the propagation of the light in a two-dimensional optical waveguide
  • FIG. 22B is a graphical representation useful in explaining the relationship between a normalized effective thickness (H) of the two-dimensional optical waveguide and a normalized core thickness (V) thereof;
  • FIG. 22C is a view useful in explaining the size of an example of the optical waveguide of the present invention.
  • FIG. 1 shows structure of an optical waveguide of a first embodiment according to the present invention.
  • a substrate 1, made of silicon, for example is employed.
  • a narrow trench 10 is formed in the silicon substrate.
  • a width of the trench is set to 5 ⁇ m.
  • a silicon oxide film 2 having refractive index of 1.45 is buried as a clad material into the trench and further a silicon nitride film 3 which has larger refractive index of 2.0 than that of the silicon oxide film 2 is buried as a core material thereinto.
  • a thickness of the silicon oxide film is set to 0.6 ⁇ m and that of the silicon nitride film is set to 0.3 ⁇ m.
  • a depth of the trench is set to 5 ⁇ m.
  • each of which is constructed by the lamination structure consisting of the silicon oxide film and the silicon nitride film are formed on side faces 11 and 12 of the trench.
  • Each sidewall constitutes an optical waveguide in which the silicon nitride film serves as an optical waveguide layer (a core), and both the silicon oxide film and a space defined in the trench serve as a clad.
  • a pair of optical waveguides are formed in opposing relation to each other with the silicon nitride film serving as the core.
  • a minimum width of the core of the optical waveguide is determined by the refractive index of the core and the refractive index of the clad surrounding the core.
  • the minimum width of the core will be about 0.15 ⁇ m, and the total minimum width of the optical waveguide including the effusion length of the light into the periphery will be about 0.4 ⁇ m. Therefore, with the core width of 0.3 ⁇ m as shown in the present embodiment, no attenuation occurs and as a result, the light can be transmitted sufficiently.
  • the width of the core can be thinned, in order to improve the high integration, if the light having the shorter wavelength is employed, the thickness of the core can be set to a level equal to or lower than 0.1 ⁇ m.
  • the high speed performance is improved by about ten times or more. If the optical waveguide which has been described in the present embodiment is used, in such a way, both the high speed performance and the high integration can be attained simultaneously. In addition, by forming the optical waveguide in such a way, the fixed thickness of the core layer can be obtained irrespective of the width of the trench. Further, since the two optical waveguides can be formed per trench, the optical waveguides can be readily formed with high density.
  • FIGS. 3 to 9 show cross sectional views showing steps of a manufacturing process of the optical waveguide of the first embodiment.
  • a surface of the silicon substrate 1 is heated at 1,000° C. in oxygen ambience to form an oxide film 4.
  • a photo resist film 5 is applied to the whole surface of the oxide film 4 and then holes are bored in desired positions using the well known photolithography technology. Then, with the patterned photo resist film as an etching mask, the oxide film 4 and the silicon substrate 1 are processed by the dry etching method to form fine trenches.
  • a trench having a relatively large width is illustrated on the right side and a trench having a fine width is illustrated on the left side.
  • the silicon substrate is etched by 0.1 ⁇ m in the mixed liquid of hydrofluoric acid and nitric acid (refer to FIG. 4).
  • the substrate is heated again at 1,000° C. in oxygen ambience to form an oxide film 4 on the whole surface of the silicon substrate.
  • a thickness of the oxide film 4 is 0.1 ⁇ m (refer to FIG. 5).
  • the substrate is heated in the mixed gas of mon-silane (SiH 4 ) gases and oxygen gases to deposit a silicon oxide film 4-1 with 0.4 ⁇ m thickness on the whole surface of the substrate.
  • the first oxide film with 0.1 ⁇ m thickness is formed, and then the next oxide film with 0.4 ⁇ m thickness is deposited such that the two layer-oxide film with the desired thickness is obtained with the formation process divided into two steps.
  • the oxide film with 0.6 ⁇ m thickness may be formed by only the thermal oxidation method. Thereafter, as shown in FIG. 7, a silicon nitride film with 0.3 ⁇ m thickness is formed on the whole surface of the substrate by the chemical vapor deposition method.
  • FIG. 9 the same structure (FIG. 9) as that of FIG. 1 is completed.
  • reference numeral 31 designates one optical waveguide formed in the narrower trench
  • reference numeral 32 designates a pair of optical waveguides formed on both the side faces of the wider trench.
  • a width of a part of a trench 50 is gradually reduced so that the width of 1.5 ⁇ m is obtained in the narrowest position of the trench 50.
  • a distance between the optical waveguides which are formed in pairs on both the side faces of the trench 50 is gradually reduced to be one optical waveguide.
  • the trench 50 is perfectly burried so that as shown in FIG. 10, the optical waveguide is formed in which the silicon nitride film serves as the optical waveguide layer (the core) and the silicon oxide film serves as the clad.
  • This structure operates as a light composing device for two kinds of light beams by making the two kinds of light beams incident to the pair of optical waveguides from the upper side of FIG.
  • FIG. 12 shows structure of an optical waveguide of a third embodiment according to the present invention.
  • an optical waveguide of the present invention is formed on a substrate 1, and on the upper face of a light emitting/photosensitive device 7, the associated optical waveguide is directly connected.
  • FIG. 13 shows structure of an example in which at least two optical waveguides are formed so as to correspond to the light emitting/photosensitive device 7.
  • FIGS. 14A and 14B show steps of one method of manufacturing the optical waveguide, shown in FIG. 13, according to the third embodiment of the present invention.
  • an oxide film 2 is formed (refer to FIG. 14A), and then by both the well known photolithography method and the dry etching method, as shown in FIG. 14B, the oxide film 2 is left only in the positions just under a photo resist film 5.
  • a silicon nitride film 3 is deposited on the whole surface of the substrate 1 (refer to FIG.
  • FIG. 16 shows structure of an optical waveguide of a fourth embodiment according to the present invention.
  • the optical waveguides are formed between integrated circuits 8.
  • FIG. 17 shows structure of an optical waveguide of a fifth embodiment according to the present invention.
  • a pair of optical waveguides are formed in an isolation trench formed between transistors 101. Even in such structure, both the transistor characteristics and the optical characteristics do not change at all as compared with the case where the optical waveguides and the transistors 101 are formed independently of each other. As a result, the optical waveguides are provided in the electronic integrated circuit so as to be combined therewith so that the signal can be transmitted in the form of light.
  • FIG. 18 shows structure of an optical waveguide of a sixth embodiment according to the present invention.
  • a pair of optical waveguides are formed in an isolation trench provided between a side-light, emission-type, light-emitting device 102 and a side-light, reception-type photosensitive device 103.
  • the coupling efficiency of the light-emitting, device and the optical waveguide, and that of the photosensitive device and the optical waveguide can be readily increased.
  • the optical waveguide and the optical branching filter of the second embodiment are formed, in the form of the structure of the fourth embodiment, between the integrated circuits 8 to be used to transmit a clock signal for the individual integrated circuits. If the distribution of the clock signal used to synchronize the individual portions of the integrated circuit with one another is performed in the form of the electric wiring, in order to make the delay due to the wiring resistance and the delay due to the wiring capacitance equal to each other, the design of the wiring becomes necessarily complicated. However, in the optical waveguide of the present invention, since the delay depends on the light velocity, the lengths of the optical waveguides has only to be made equal to each other simply.
  • the optical waveguide of the second embodiment is used to transmit a clock signal of the integrated circuit.
  • the two optical waveguides are used to transmit the leading pulse for the clock and the trailing pulse for the clock, respectively, and thus the optical signal is generated in the form of pulses at the leading and trailing timing.
  • the leading pulse and the trailing pulse are transmitted through the respective two optical waveguides independently of each other, whereby the malfunction due to the counting mistake of the pulse can be completely removed.
  • the jitter between the leading and trailing pulses can be effectively reduced.
  • the clock signal is transmitted in the form of light similar to the eighth embodiment, whereby there are provided advantages that the design of the wiring can be readily performed, the consumed power can be reduced, and so forth. Therefore, such structure is applied to the computer system for example, whereby both the improvements in the calculation speed and the integration density can be attained.
  • the ninth embodiment is an example wherein the silicon semiconductor integrated circuit embodying the present invention is applied to the high-speed, large scale computer to which a plurality of processors 500 for processing the instructions and the calculation are connected in parallel.
  • the optical waveguides of the present invention are used in the connection between the internal portions of the integrated circuit and between the integrated circuits.
  • the light emitting/photosensitive device of silicon, and the light emitting/photosensitive device of compound semiconductor are employed.
  • the processors 500 for processing the instructions and the calculation, a system controller 501, a main storage unit 502 and the like can be constructed in a silicon semiconductor chip with one side about 10 to 30 mm.
  • the processors 500 for processing the instructions and the calculation, the system controller 501, and one data communication interface 503 constituted by the compound semiconductor integrated circuits are mounted on the same substrate 506.
  • one data communication interface 503 and the data communication controller 504 are mounted on the same substrate 507.
  • Those substrates 506 and 507, and a substrate on which the main storage unit 502 is mounted are mounted on a substrate with one side about 50 cm or less, thereby forming a central processing unit 508 of the large scale computer.
  • the data communication between the internal portions of the control processing unit 508, the data communication between a plurality of control processing units, or the data communication between the central processing unit 508 and a substrate 509 on which the data communication interface 503 and the I/O processor 505 are mounted is performed through an optical fiber 510 indicated by a double end arrow line in the figure.
  • the silicon semiconductor integrated circuits each consisting of the processors 500 for processing the instructions and the calculation, the system controller 501, the main storage unit 502 and the like operate in parallel and at a high speed, and also the data communication is performed with the lights as the media, the number of instruction processings per second can be largely increased.
  • FIGS. 21A to 21C are block diagrams useful in explaining the connection between the optical waveguide of the present invention, and the light emitting device and the photosensitive device.
  • FIG. 21A shows the normal connection.
  • FIG. 21B shows an embodiment which includes at least one optical branch point.
  • FIG. 21C shows an embodiment in which an optical modulator is provided in the middle of the optical waveguide.
  • the silicon nitride film is employed as the core material, and the silicon oxide film is employed as the clad material surrounding the core.
  • any combination of such materials may also be employed as long as the refractive index of the core material is larger than that of the clad material.
  • the core material polysilicon, semiconductor, Ta 2 O 5 , polymer, Si 3 N 4 , SiNO, or SiO 2 to which the suitable impurities are added may be available.
  • examples of the minimum size of the optical waveguide, of the present invention, shown in FIG. 15 are shown as follows.
  • an optical waveguide of FIG. 22A, including a substrate 201, a film 202 and a cover layer 203, the light is optically guided as indicated by an arrow.
  • the refractive index of the substrate is the same as that of the cover layer.
  • the film layer corresponds to the core layer of the optical waveguide of the present invention.
  • the effective thickness h eff of the optical waveguide and the core thickness h are respectively determined on the basis of the following expressions. ##EQU1## where ⁇ is a wavelength, n f is refractive index of the core and n s is refractive index of the substrate (the clad).
  • the size of the optical waveguide of the present invention is determined on the basis of a schematic view of FIG. 22C.
  • the trench type optical waveguide as the present invention is not shown, but the two-dimensional optical waveguide is generally shown.
  • the present invention relates to the trench type optical waveguide in which the effective thickness h eff of the optical waveguide corresponds to the trench width, and the core thickness h thereof corresponds to the core width. It should be noted that in the present invention, the trench width is not smaller than the effective thickness h eff at all.

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  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Integrated Circuits (AREA)
US08/361,681 1993-12-27 1994-12-22 Integrated optical waveguide device Expired - Lifetime US5604835A (en)

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JP33050393A JP3345143B2 (ja) 1993-12-27 1993-12-27 光導波路の製造方法
JP5-330503 1993-12-27

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EP0661561A3 (fr) 1995-09-20
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KR950019788A (ko) 1995-07-24
DE69423720T2 (de) 2000-11-23

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