US5576926A - Capacitor with buried isolated electrode - Google Patents
Capacitor with buried isolated electrode Download PDFInfo
- Publication number
- US5576926A US5576926A US08/415,499 US41549995A US5576926A US 5576926 A US5576926 A US 5576926A US 41549995 A US41549995 A US 41549995A US 5576926 A US5576926 A US 5576926A
- Authority
- US
- United States
- Prior art keywords
- dielectric layer
- layer
- electrode layer
- dielectric
- length
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 80
- 239000004020 conductor Substances 0.000 claims abstract 7
- 239000000758 substrate Substances 0.000 claims abstract 3
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000003989 dielectric material Substances 0.000 abstract description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/255—Means for correcting the capacitance value
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
Definitions
- This invention relates generally to capacitors and more particularly to a ceramic capacitor which utilizes a buried layer.
- Another object of the invention is to provide a buried layer capacitor which is highly reliable.
- Another object of the invention is to provide a buried layer capacitor which is capable of highly reliable operation over a broad range of operating temperatures.
- Yet another object of the invention is to provide a buried layer capacitor which can be manufactured in quantity at a low unit cost while maintaining high levels of quality.
- a buried layer capacitor which includes a planar electrode layer mounted between a pair of dielectric layers. Length and width dimensions of the dielectric layers are slightly greater than corresponding length and width dimensions of the electrode layer and the electrode layer generally is centered with respect to the dielectric layers.
- One layer of the pair of dielectric layers has a pair of spaced apart contact members, each having a different polarity from the other.
- the dielectric layer which is attached to the contact member has a selected thickness which allows the dielectric layer, in combination with the electrode layer, to develop a desired value of capacitance between the contact members.
- the pair of spaced apart contact members is replaced by a pair of metallized areas (each having a different polarity from the other) and the dielectric layer in combination with the electrode layer develop a desired value of capacitance between the two metallized areas.
- the metallized areas facilitate mounting the buried layer capacitor on a circuit board while using minimum surface area of the circuit board.
- the metallized areas extend onto end portions of the dielectric layer in order to facilitate testing of the capacitor.
- FIG. 1 is a generally downwardly looking perspective view of a buried layer capacitor made in accordance with the present invention and having a portion of the capacitor shown broken away to reveal details of internal construction;
- FIG. 2 is an elevational cross-sectional view taken along line 2--2 of FIG. 1;
- FIG. 3 is a planar cross-sectional view taken along line 3--3 of FIG. 2;
- FIG. 4 is an elevational cross-sectional view taken along the line 4--4 of FIG. 1;
- FIG. 5 is a side elevational view taken along the line 5--5 of FIG. 1;
- FIG. 6 is a generally downwardly looking perspective view of an alternative embodiment of the buried layer capacitor of FIG. 1;
- FIG. 7 is a bottom planar view of the capacitor of FIG. 6 taken along the line 7--7 of FIG. 6;
- FIG. 8 is a side elevational view of the capacitor of FIG. 6;
- FIG. 9 is an end elevational view of the capacitor of FIG. 6;
- FIG. 10 is a side elevational view of an alternative embodiment of the buried layer capacitor of FIG. 1, incorporating a pair of axial leads;
- FIG. 11 is a bottom planar view of the capacitor of FIG. 10, taken along line 11--11 of FIG. 10;
- FIG. 12 is a side elevational view of another embodiment of the buried layer capacitor of FIG. 1, incorporating metallized portions, each having a different polarity from the other, on the end surfaces of the dielectric layers;
- FIG. 13 is an end elevational view of the capacitor of FIG. 12;
- FIG. 14 is a perspective view of the capacitor of FIG. 12;
- FIG. 15 is a bottom planar view of another embodiment of the buried layer capacitor of FIG. 1, similar to FIG. 7 and incorporating a square configuration;
- FIG. 16 is an end elevational view of the capacitor of FIG. 15.
- FIG. 1 a buried layer capacitor generally designated 10, made in accordance with the present invention, which includes an electrode layer 12, a first dielectric layer 14, a second dielectric layer 16 and a pair of contact members 18, 20, each having a different polarity from the other.
- the dielectric layers 14, 16 are generally rectangular and as is shown in FIGS. 1 and 3, the electrode layer 12 also is generally rectangular, with length and width dimensions which are somewhat smaller than corresponding length and width dimensions of the dielectric layers 14, 16.
- the electrode layer 12 is planar and generally is centered relative to the dielectric layers 14, 16 resulting in a border, generally designated by the reference numeral 22, which surrounds the periphery of the electrode layer 12.
- the electrode layer 12 thus is completely contained or buried in the dielectric layers 14, 16.
- the electrode layer may be silver, gold, nickel, copper or palladium or another high conductivity metal.
- the contacts members 18, 20 are attached to a bottom surface 24 of the dielectric layer 14.
- the contacts members 18, 20 are each planar and are made of any one of a number of metals which have desirable combination of stiffness and conductivity. Appropriate materials for the contact members are to be copper and silver.
- the dielectric layers 14, 16 are made of any one of a number of dielectric materials such as magnesium titanate, strontium titanate or barium titanate.
- the first dielectric layer 14 is disposed between the electrode layer 12 and the contacts members 18, 20.
- the contacts members 18, 20 have a preferred thickness which is in the order of 0.01 inches.
- the dielectric layer 14, in combination with the electrode layer 12 and the contacts members 18, 20, (each having a different polarity from the other) allow development of capacitance between the contacts members 18, 20.
- the buried layer capacitor 10 of FIGS. 1-5 typically has the following dimensions which should be considered as given by way of illustration only and should not be considered as limiting in any way.
- Overall length of the capacitor 10 is in an order of 0.05 inches, its width is in an order of 0.05 inches, its height is in an order of 0.02 inches.
- Thickness of the dielectric layer 14 is in an order of 0.003 inches and thickness of the dielectric layer 16 is in an order of 0.017 inches.
- the thickness of the dielectric layer 14 typically may range from 0.0005 inches to 0.01 inches in order to vary capacitance and the voltage rating of the capacitor 10.
- the dimensions of the electrode layer 12 are typically as follows: length 0.045 inches, width 0.045 inches, and thickness 0.0001 inches.
- FIGS. 6 and 7. An alternative embodiment of a capacitor generally designated 100 according to the invention is shown in FIGS. 6 and 7.
- the contact members 18, 20 are replaced by a pair of metallized areas 102, 104 on a bottom surface 106 of the capacitor.
- the metallized areas 102, 104 function as terminations, each having a different polarity from the other, and facilitate mounting of the capacitor 100 directly to a printed circuit board. Elimination of the contacts members 18, 20 results in use of a minimum amount of circuit board area for the capacitor 100.
- the capacitor 100 includes a first dielectric layer 14 and a second dielectric layer 16 and an electrode layer 12, each of which are generally similar to corresponding parts which have been described in connection with the embodiment depicted in FIGS. 1-5.
- the capacitor 100 typically includes an electrode layer 12 made of palladium and metallized areas 102, 104 or terminals made of silver.
- the following physical dimensions and capacitance values for the buried layer capacitor 100 should be considered as given by way of example and should not be considered as limiting in any way.
- the length dimension (as measured along edge 106) may range from 0.040 inches to 0.50 inches; the width (as measured along edge 108) may range from 0.020 inches to 0.50 inches; and the thickness (as measured along edge 110) may range from 0.010 to 0.10 inches.
- the capacitor 100 is manufactured in the following sizes:
- the margin or barrier at the sides and at the ends of the electrode layer 12 as indicated by the reference numeral 112 in FIG. 7 may range from 0.005 inches to 0.010 inches.
- the gap between the terminations 102, 104 as indicated by the reference numeral 114 in FIGS. 6, 7 and 8 may range from 0.005 inches to 0.020 inches.
- the thickness of the dielectric layer 14 between the electrode layer 12 and the terminations 102, 104 may range from less than 0.001 inches to 0.010 inches.
- the length and width dimensions are made equal, thereby resulting in a the square configuration of the buried layer capacitor 200.
- Typical values for capacitance for a buried layer capacitor 100 having a size designated as Size A in Table 1 for various values of dielectric thickness, margin size, gap spacing and dielectric constant are shown in Table 2.
- the capacitance values shown are in pico Farads (pF) as measured between terminations 102, 104.
- the capacitance of the buried layer capacitor 100 can be adjusted by adjusting the gap 114 between the terminations 102, 104 each having a different polarity from the other. This adjustment may be performed as part of a final manufacturing process and eliminates need for contacting and trimming the electrode layer 12. This adjustment may be accomplished by trimming or cutting away a small portion of the terminations along the edges 116, 118 using conventional abrasion cutting or laser cutting equipment.
- FIGS. 10 and 11 show an alternative embodiment of the buried layer capacitor contacts members 300 which incorporates axial leads contacts members 302, 304.
- the axial contacts members 302, 304 provide an alternative mounting configuration.
- FIGS. 12-14 show another alternate embodiment of the buried layer capacitor generally designated 400 in which the metallized areas 102, 104 or cathode and anode shown in FIG. 6 have been modified to extend onto the end surfaces 402, 404 of the dielectric layers 14, 16.
- the terminations 406, 408 on the buried layer capacitor 400 facilitate the use of test equipment in which probes are placed on surfaces 410, 412 in order to measure performance characteristics of the capacitor 400.
- the relatively thicker dielectric layer 16 contributes to overall ruggedness of the buried layer capacitors generally designated 10, 100, 200, 300, 400, respectively thicker dielectric layer 16. This makes it possible to handle these capacitors using conventional production type automatic handling equipment, even though the dielectric layer 14 is in the range of 0.0001 inches to 0.01 inches.
- a key feature of the buried layer capacitors generally designate 10, 100, 200, 300, 400, respectively is their performances at very high frequencies.
- a typical capacitor made according to the prior art is useful up to approximately 11 gigaHertz (11 GHz).
- Tests performed on capacitors made according to the present invention indicate useful performance to approximately 20 GHz.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Priority Applications (13)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/415,499 US5576926A (en) | 1995-04-03 | 1995-04-03 | Capacitor with buried isolated electrode |
IL11728096A IL117280A (en) | 1995-04-03 | 1996-02-27 | Buried layer capacitor |
TW085103349A TW297129B (de) | 1995-04-03 | 1996-03-20 | |
PCT/US1996/003883 WO1996031890A1 (en) | 1995-04-03 | 1996-03-22 | Buried layer capacitor |
CA002217155A CA2217155C (en) | 1995-04-03 | 1996-03-22 | Buried layer capacitor |
GB9715053A GB2312327B (en) | 1995-04-03 | 1996-03-22 | Buried layer capacitor |
EP96912432A EP0835516B1 (de) | 1995-04-03 | 1996-03-22 | Kondensator mit vergrabener schicht |
DE69636455T DE69636455T2 (de) | 1995-04-03 | 1996-03-22 | Kondensator mit vergrabener schicht |
CN96192789A CN1102795C (zh) | 1995-04-03 | 1996-03-22 | 埋层式电容器 |
JP8530326A JPH11503271A (ja) | 1995-04-03 | 1996-03-22 | 埋込層形容量素子 |
KR1019970706951A KR100413813B1 (ko) | 1995-04-03 | 1996-03-22 | 매몰층커패시터 |
MXPA/A/1997/007136A MXPA97007136A (en) | 1995-04-03 | 1997-09-19 | Buried layer capacitor |
HK98110398A HK1009553A1 (en) | 1995-04-03 | 1998-09-03 | Buried layer capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/415,499 US5576926A (en) | 1995-04-03 | 1995-04-03 | Capacitor with buried isolated electrode |
Publications (1)
Publication Number | Publication Date |
---|---|
US5576926A true US5576926A (en) | 1996-11-19 |
Family
ID=23645927
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/415,499 Expired - Lifetime US5576926A (en) | 1995-04-03 | 1995-04-03 | Capacitor with buried isolated electrode |
Country Status (12)
Country | Link |
---|---|
US (1) | US5576926A (de) |
EP (1) | EP0835516B1 (de) |
JP (1) | JPH11503271A (de) |
KR (1) | KR100413813B1 (de) |
CN (1) | CN1102795C (de) |
CA (1) | CA2217155C (de) |
DE (1) | DE69636455T2 (de) |
GB (1) | GB2312327B (de) |
HK (1) | HK1009553A1 (de) |
IL (1) | IL117280A (de) |
TW (1) | TW297129B (de) |
WO (1) | WO1996031890A1 (de) |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6362948B1 (en) * | 1998-07-10 | 2002-03-26 | Murata Manufacturing Co., Ltd. | Electronic component |
US6366443B1 (en) | 1997-12-09 | 2002-04-02 | Daniel Devoe | Ceramic chip capacitor of conventional volume and external form having increased capacitance from use of closely-spaced interior conductive planes reliably connecting to positionally-tolerant exterior pads through multiple redundant vias |
US6473291B1 (en) * | 1999-03-16 | 2002-10-29 | Gb Aquisition Co., Inc. | Low inductance four terminal capacitor lead frame |
US6542352B1 (en) | 1997-12-09 | 2003-04-01 | Daniel Devoe | Ceramic chip capacitor of conventional volume and external form having increased capacitance from use of closely spaced interior conductive planes reliably connecting to positionally tolerant exterior pads through multiple redundant vias |
US6587327B1 (en) * | 2002-05-17 | 2003-07-01 | Daniel Devoe | Integrated broadband ceramic capacitor array |
US6661639B1 (en) | 2002-07-02 | 2003-12-09 | Presidio Components, Inc. | Single layer capacitor |
US20040042156A1 (en) * | 2002-05-17 | 2004-03-04 | Daniel Devoe | Integrated broadband ceramic capacitor array |
US20040057192A1 (en) * | 2001-09-05 | 2004-03-25 | Galvagni John L. | Cascade capacitor |
US20040111880A1 (en) * | 1998-08-25 | 2004-06-17 | Norio Sakai | Multilayer electronic part and method of producing the same |
US6777254B1 (en) | 1999-07-06 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US6885539B1 (en) | 2003-12-02 | 2005-04-26 | Presidio Components, Inc. | Single layer capacitor |
US6917509B1 (en) | 2002-11-21 | 2005-07-12 | Daniel F. Devoe | Single layer capacitor with dissimilar metallizations |
US20050185360A1 (en) * | 2004-02-06 | 2005-08-25 | Avx Corporation | Integrated capacitor assembly |
US6992879B2 (en) * | 2000-06-19 | 2006-01-31 | Monsorno Richard V | Capacitor with buried electrode |
US7035080B1 (en) | 2004-11-22 | 2006-04-25 | Lambert Devoe | Combined multilayer and single-layer capacitor for wirebonding |
US7075776B1 (en) * | 2002-05-17 | 2006-07-11 | Daniel Devoe | Integrated broadband ceramic capacitor array |
US20070084032A1 (en) * | 2004-09-14 | 2007-04-19 | John Mruz | Method of making an orientation-insensitive ultra-wideband coupling capacitor |
US20070151313A1 (en) * | 2005-12-31 | 2007-07-05 | Hon Hai Precision Industry Co., Ltd. | Computer enclosure with locking apparatus |
US7307829B1 (en) | 2002-05-17 | 2007-12-11 | Daniel Devoe | Integrated broadband ceramic capacitor array |
EP2267737A2 (de) | 2004-09-13 | 2010-12-29 | American Technical Ceramics Corporation | elektronisches Komponent mit einem RF-Komponent |
DE102012108035A1 (de) * | 2012-08-30 | 2014-06-12 | Epcos Ag | Kondensator mit verbessertem linearen Verhalten |
US10192952B2 (en) | 2016-03-07 | 2019-01-29 | Avx Corporation | Multi-layer electronic device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6483692B2 (en) * | 2000-12-19 | 2002-11-19 | Intel Corporation | Capacitor with extended surface lands and method of fabrication therefor |
US7548432B2 (en) | 2005-03-24 | 2009-06-16 | Agency For Science, Technology And Research | Embedded capacitor structure |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3648132A (en) * | 1970-04-20 | 1972-03-07 | Illinois Tool Works | Multilayer capacitor and process for adjusting the value thereof |
US4193106A (en) * | 1978-01-24 | 1980-03-11 | Sprague Electric Company | Monolithic ceramic capacitor with fuse link |
US4887186A (en) * | 1988-04-12 | 1989-12-12 | Matsushita Electric Industrial Co., Ltd. | Multi-layered dielectric element |
US4977485A (en) * | 1988-07-11 | 1990-12-11 | Murata Manufacturing Co., Ltd. | Monolithic ceramic capacitor |
US5014158A (en) * | 1989-04-11 | 1991-05-07 | Matsushita Electric Industrial Co., Ltd. | Laminated ceramic capacitor |
US5170317A (en) * | 1990-01-09 | 1992-12-08 | Murata Manufacturing Co., Ltd. | Multilayer capacitor |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2229407A1 (de) * | 1972-06-16 | 1974-01-03 | Tesch Gmbh | Funk-entstoerkondensator |
US5170307A (en) * | 1991-05-31 | 1992-12-08 | Texas Instruments Incorporated | Mounting apparatus for electrical motor control components |
JPH0845776A (ja) * | 1994-08-02 | 1996-02-16 | Matsushita Electric Ind Co Ltd | 低容量積層形チップセラミックコンデンサ |
-
1995
- 1995-04-03 US US08/415,499 patent/US5576926A/en not_active Expired - Lifetime
-
1996
- 1996-02-27 IL IL11728096A patent/IL117280A/xx not_active IP Right Cessation
- 1996-03-20 TW TW085103349A patent/TW297129B/zh active
- 1996-03-22 EP EP96912432A patent/EP0835516B1/de not_active Expired - Lifetime
- 1996-03-22 GB GB9715053A patent/GB2312327B/en not_active Expired - Fee Related
- 1996-03-22 DE DE69636455T patent/DE69636455T2/de not_active Expired - Lifetime
- 1996-03-22 CN CN96192789A patent/CN1102795C/zh not_active Expired - Fee Related
- 1996-03-22 JP JP8530326A patent/JPH11503271A/ja active Pending
- 1996-03-22 KR KR1019970706951A patent/KR100413813B1/ko not_active IP Right Cessation
- 1996-03-22 CA CA002217155A patent/CA2217155C/en not_active Expired - Fee Related
- 1996-03-22 WO PCT/US1996/003883 patent/WO1996031890A1/en active IP Right Grant
-
1998
- 1998-09-03 HK HK98110398A patent/HK1009553A1/xx not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3648132A (en) * | 1970-04-20 | 1972-03-07 | Illinois Tool Works | Multilayer capacitor and process for adjusting the value thereof |
US4193106A (en) * | 1978-01-24 | 1980-03-11 | Sprague Electric Company | Monolithic ceramic capacitor with fuse link |
US4887186A (en) * | 1988-04-12 | 1989-12-12 | Matsushita Electric Industrial Co., Ltd. | Multi-layered dielectric element |
US4977485A (en) * | 1988-07-11 | 1990-12-11 | Murata Manufacturing Co., Ltd. | Monolithic ceramic capacitor |
US5014158A (en) * | 1989-04-11 | 1991-05-07 | Matsushita Electric Industrial Co., Ltd. | Laminated ceramic capacitor |
US5170317A (en) * | 1990-01-09 | 1992-12-08 | Murata Manufacturing Co., Ltd. | Multilayer capacitor |
Cited By (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6751082B2 (en) | 1997-12-09 | 2004-06-15 | Daniel Devoe | Ceramic chip capacitor of conventional volume and external form having increased capacitance from use of closely spaced interior conductive planes reliably connecting to positionally tolerant exterior pads through multiple redundant vias |
US6366443B1 (en) | 1997-12-09 | 2002-04-02 | Daniel Devoe | Ceramic chip capacitor of conventional volume and external form having increased capacitance from use of closely-spaced interior conductive planes reliably connecting to positionally-tolerant exterior pads through multiple redundant vias |
US6542352B1 (en) | 1997-12-09 | 2003-04-01 | Daniel Devoe | Ceramic chip capacitor of conventional volume and external form having increased capacitance from use of closely spaced interior conductive planes reliably connecting to positionally tolerant exterior pads through multiple redundant vias |
US20030161091A1 (en) * | 1997-12-09 | 2003-08-28 | Daniel Devoe | Ceramic chip capacitor of conventional volume and external form having increased capacitance from use of closely spaced interior conductive planes reliably connecting to positionally tolerant exterior pads through multiple redundant vias |
US20030161090A1 (en) * | 1997-12-09 | 2003-08-28 | Daniel Devoe | Ceramic chip capacitor of conventional volume and external form having increased capacitance from use of closely spaced interior conductive planes reliably connecting to positionally tolerant exterior pads through multiple redundant vias |
US6753218B2 (en) | 1997-12-09 | 2004-06-22 | Daniel Devoe | Ceramic chip capacitor of conventional volume and external form having increased capacitance from use of closely spaced interior conductive planes reliably connecting to positionally tolerant exterior pads through multiple redundant vias |
US6362948B1 (en) * | 1998-07-10 | 2002-03-26 | Murata Manufacturing Co., Ltd. | Electronic component |
US20040111880A1 (en) * | 1998-08-25 | 2004-06-17 | Norio Sakai | Multilayer electronic part and method of producing the same |
US6473291B1 (en) * | 1999-03-16 | 2002-10-29 | Gb Aquisition Co., Inc. | Low inductance four terminal capacitor lead frame |
US8530896B2 (en) | 1999-07-06 | 2013-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a pixel unit including an auxiliary capacitor |
US8859353B2 (en) | 1999-07-06 | 2014-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US9343570B2 (en) | 1999-07-06 | 2016-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US6777254B1 (en) | 1999-07-06 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US7569854B2 (en) | 1999-07-06 | 2009-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US20040222467A1 (en) * | 1999-07-06 | 2004-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US9786787B2 (en) | 1999-07-06 | 2017-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US6992879B2 (en) * | 2000-06-19 | 2006-01-31 | Monsorno Richard V | Capacitor with buried electrode |
US20040057192A1 (en) * | 2001-09-05 | 2004-03-25 | Galvagni John L. | Cascade capacitor |
US6757152B2 (en) | 2001-09-05 | 2004-06-29 | Avx Corporation | Cascade capacitor |
US7263764B2 (en) | 2001-09-05 | 2007-09-04 | Avx Corporation | Method for adjusting performance characteristics of a multilayer component |
US7075776B1 (en) * | 2002-05-17 | 2006-07-11 | Daniel Devoe | Integrated broadband ceramic capacitor array |
US6970341B1 (en) | 2002-05-17 | 2005-11-29 | Daniel Devoe | Integrated broadband ceramic capacitor array |
US6816356B2 (en) | 2002-05-17 | 2004-11-09 | Daniel Devoe | Integrated broadband ceramic capacitor array |
US6587327B1 (en) * | 2002-05-17 | 2003-07-01 | Daniel Devoe | Integrated broadband ceramic capacitor array |
US7307829B1 (en) | 2002-05-17 | 2007-12-11 | Daniel Devoe | Integrated broadband ceramic capacitor array |
US20040042156A1 (en) * | 2002-05-17 | 2004-03-04 | Daniel Devoe | Integrated broadband ceramic capacitor array |
US6822847B2 (en) | 2002-07-02 | 2004-11-23 | Presidio Components, Inc. | Single layer capacitor |
US6969647B2 (en) | 2002-07-02 | 2005-11-29 | Presidio Components, Inc. | Method of making single layer capacitor |
US20050057887A1 (en) * | 2002-07-02 | 2005-03-17 | Presidio Components, Inc. | Single layer capacitor |
US20040090733A1 (en) * | 2002-07-02 | 2004-05-13 | Presidio Components, Inc. | Single layer capacitor |
US6661639B1 (en) | 2002-07-02 | 2003-12-09 | Presidio Components, Inc. | Single layer capacitor |
US6917509B1 (en) | 2002-11-21 | 2005-07-12 | Daniel F. Devoe | Single layer capacitor with dissimilar metallizations |
US6885539B1 (en) | 2003-12-02 | 2005-04-26 | Presidio Components, Inc. | Single layer capacitor |
US7685703B1 (en) | 2003-12-02 | 2010-03-30 | Presidio Components, Inc. | Method of making an essentially monolithic capacitor |
US7444726B1 (en) | 2003-12-02 | 2008-11-04 | Presidio Components, Inc. | Method of making an essentially monolithic capacitor |
US20060250748A1 (en) * | 2004-02-06 | 2006-11-09 | Robert Purple | Integrated capacitor assembly |
US7133275B2 (en) | 2004-02-06 | 2006-11-07 | Avx Corporation | Integrated capacitor assembly |
US20050185360A1 (en) * | 2004-02-06 | 2005-08-25 | Avx Corporation | Integrated capacitor assembly |
US7641933B2 (en) | 2004-02-06 | 2010-01-05 | Avx Corporation | Integrated capacitor assembly |
EP2267737A2 (de) | 2004-09-13 | 2010-12-29 | American Technical Ceramics Corporation | elektronisches Komponent mit einem RF-Komponent |
US7554424B2 (en) | 2004-09-14 | 2009-06-30 | American Technical Ceramics Corporation | Electronic component and method of making |
US20080197940A1 (en) * | 2004-09-14 | 2008-08-21 | John Mruz | Method of making an orientation-insensitive ultra-wideband coupling capacitor |
US7364598B2 (en) * | 2004-09-14 | 2008-04-29 | American Technical Ceramics Corporation | Method of making an orientation-insensitive ultra-wideband coupling capacitor |
US20070084032A1 (en) * | 2004-09-14 | 2007-04-19 | John Mruz | Method of making an orientation-insensitive ultra-wideband coupling capacitor |
US7035080B1 (en) | 2004-11-22 | 2006-04-25 | Lambert Devoe | Combined multilayer and single-layer capacitor for wirebonding |
US7428835B2 (en) * | 2005-12-31 | 2008-09-30 | Hon Hai Precision Industry Co., Ltd. | Computer enclosure with locking apparatus |
US20070151313A1 (en) * | 2005-12-31 | 2007-07-05 | Hon Hai Precision Industry Co., Ltd. | Computer enclosure with locking apparatus |
DE102012108035A1 (de) * | 2012-08-30 | 2014-06-12 | Epcos Ag | Kondensator mit verbessertem linearen Verhalten |
DE102012108035B4 (de) * | 2012-08-30 | 2016-06-16 | Epcos Ag | Kondensator mit verbessertem linearen Verhalten |
US9837214B2 (en) | 2012-08-30 | 2017-12-05 | Snaptrack, Inc. | Capacitor having an improved linear behavior |
US10192952B2 (en) | 2016-03-07 | 2019-01-29 | Avx Corporation | Multi-layer electronic device |
US10622438B2 (en) | 2016-03-07 | 2020-04-14 | Avx Corporation | Multi-layer electronic device |
Also Published As
Publication number | Publication date |
---|---|
EP0835516A4 (de) | 2003-05-02 |
WO1996031890A1 (en) | 1996-10-10 |
CN1102795C (zh) | 2003-03-05 |
CN1179230A (zh) | 1998-04-15 |
JPH11503271A (ja) | 1999-03-23 |
IL117280A0 (en) | 1996-06-18 |
KR100413813B1 (ko) | 2004-04-03 |
CA2217155A1 (en) | 1996-10-10 |
GB2312327A (en) | 1997-10-22 |
EP0835516A1 (de) | 1998-04-15 |
KR19980703547A (ko) | 1998-11-05 |
TW297129B (de) | 1997-02-01 |
GB9715053D0 (en) | 1997-09-24 |
IL117280A (en) | 2003-09-17 |
MX9707136A (es) | 1998-06-30 |
HK1009553A1 (en) | 1999-09-10 |
EP0835516B1 (de) | 2006-08-16 |
DE69636455T2 (de) | 2007-03-29 |
GB2312327B (en) | 1998-10-07 |
DE69636455D1 (de) | 2006-09-28 |
CA2217155C (en) | 2002-08-20 |
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