US5051797A - Charge-coupled device (CCD) imager and method of operation - Google Patents

Charge-coupled device (CCD) imager and method of operation Download PDF

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Publication number
US5051797A
US5051797A US07/402,311 US40231189A US5051797A US 5051797 A US5051797 A US 5051797A US 40231189 A US40231189 A US 40231189A US 5051797 A US5051797 A US 5051797A
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region
charge
substrate
accumulation
major surface
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Herbert J. Erhardt
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Eastman Kodak Co
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Eastman Kodak Co
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Assigned to EASTMAN KODAK COMPANY, A CORP. OF NJ reassignment EASTMAN KODAK COMPANY, A CORP. OF NJ ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: ERHARDT, HERBERT J.
Priority to EP90913086A priority patent/EP0441934A1/fr
Priority to JP51230590A priority patent/JP3200436B2/ja
Priority to PCT/US1990/004913 priority patent/WO1991003838A1/fr
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Publication of US5051797A publication Critical patent/US5051797A/en
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    • H01L27/14887—
    • H01L27/14831—

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  • the present invention relates to a charge-coupled device (CCD) photodetector imager, and, more particularly, to such an imager in which the photodetector is continuously drained and which has anti-blooming features.
  • CCD charge-coupled device
  • Photodetector imagers in general, comprise a plurality of photodetectors arranged in either a linear or area array. Along the linear array of the photodetectors or along each column of photodetectors in an area array is a transfer device for carrying the charge collected in the photodetectors to read-out circuitry.
  • One transfer means commonly used is a CCD.
  • the photodetectors commonly used are either a photogate detector or a photodiode detector. Both of these type of photodetectors are used in a variety of applications, but each presents certain tradeoffs in performance.
  • a photogate photodetector comprises a conductive gate over and insulated from a surface of a semiconductor substrate in which the imager is formed.
  • a bias applied to the gate results in a depletion region in the substrate beneath the gate. Radiation entering the substrate is converted to charge carriers which are collected in the depletion region.
  • the photogates exhibit reset characteristics which are free from lag and noise. However, they do suffer from poor quantum efficiency over much of the visible spectrum and tend to present photoresponse non-uniformity across a device because of gate thickness variation and/or depletion depth variation.
  • a photodiode photodetector comprises regions of opposite conductivity type in the substrate, one of which can be the substrate, forming a pn junction therebetween. Radiation entering the substrate is converted to charge carriers which are collected in the depletion region formed at the pn junction.
  • Photodiode photodetectors tend to be more uniform than photogate photodetectors and exhibit very good quantum efficiency over the entire visible spectrum. However, they can exhibit lag and reset noise.
  • both photogate and photodiode photodetectors suffer from time dependent response due to the collapse of the depletion region of the photodetector while photo-generated carriers are accumulated. That is, as the charge carriers are collected in the depletion region of the photodetector the depletion region becomes smaller until it is completely filled up.
  • the present invention is directed to a CCD imager which includes at least one photodetector of the type which is capable of being completely depleted such as a pinned diode.
  • Contiguous with the photodiode is an accumulation region having a potential well which is always deeper than the depletion region of the photodetector so that charge carriers collected in the photodetector will flow into the accumulation region.
  • Adjacent a side of the accumulation region is a shift register (e.g., a CCD shift register). Between the accumulation region and the shift register is a transfer gate which allows selective transfer of the charge carriers from the accumulation region into the shift register.
  • Adjacent another side of the accumulation region is an anti-blooming drain which limits the quantity of charge carriers which can be collected in the accumulation region.
  • the CCD imager of the present invention comprises a substrate of a semiconductor material having a major surface.
  • a photodetector is in the substrate at the major surface and is capable of being completely depleted of charge carriers.
  • An accumulation region is at the major surface of the substrate contiguous with the photodetector.
  • a shift register is at the major surface of the substrate along one side of the accumulation region. Transfer means is provided between the accumulation region and the shift register for selectively transferring charge carriers from the accumulation region to the shift register.
  • An anti-blooming drain is in the substrate at the major surface along another side of the accumulation region.
  • FIG. 1 is a top plan view of a portion of a CCD imager in accordance with the present invention
  • FIG. 2 is a sectional view of a portion of the imager taken along line 2--2 of FIG. 1;
  • FIG. 3 is a sectional view of a portion of the imager taken along line 3--3 of FIG. 1;
  • FIG. 4 is a potential diagram of the imager during integration taken along the section of FIG. 2;
  • FIG. 5 is a potential diagram of the imager during integration taken along the section of FIG. 3.
  • FIG. 1 is a top view and FIG. 2 is a cross-sectional view of a portion of FIG. 1 taken along the dashed line 2--2.
  • FIG. 3 is a cross-sectional view of another portion of FIG. 1 taken along the dashed line 3--3.
  • Imager 10 comprises a substrate (semiconductorbody) 12, typically of a semiconductor material, such as p-type single crystalline silicon (shown as p-), having a major (top) surface 14.
  • p- p-type single crystalline silicon
  • Photodetectors 16 In thesubstrate 12 along the major surface 14 are a plurality of photodetectors 16.
  • the photodetectors 16 are arranged in a line to form a linear array imager. However, the photodetectors 16 may be arranged in spaced rows and columns to form an area array. Contiguous to one side of each of the photodetectors 16 is an accumulation region 18. Extending along the side of the accumulation regions 18 opposite the photodetectors 16 is a CCD shift register 20. The shift register 20 extends along and substantially parallel to the entire line of the accumulation regions 18.
  • An anti-blooming drain 24 extends along a side of each of the accumulation regions 18 so as to extend along the space between the CCD shift register 20 and the line of photodetectors 16.
  • a gate 28 extends across the space between each of the accumulation regions 18 and its respective anti-blooming drain 24.
  • a transfer gate 29 extends across the space between the CCD shift register 20 and the line of accumulation regions 18 along the entire line of the accumulation regions 18.
  • Each of the photodetectors 16 is of the type which is capable of being completely depleted.
  • a preferred photodetector 16 for this purpose is a pinned diode photodetector of the type described in the article "The Pinned Photodiode For An Inter-Transfer CCD Image Sensor", byB. C. Burkey et al., IEDM Technical Digest, 1984, page 28.
  • the pinned diode includes an n-type conductivity region 30, (shown) in the substrate 12at the major surface 14. Typically the conductivity of region 30 is about 10 17 impurities/cm 3 .
  • the substrate 12 which is of p-type conductivity, is typically of 10 15 impurities/cm 3 , or can have ap-type well in the surface 14 of an n-type conductivity substrate in which the photodiode is formed.
  • a second, highly conductive, p-type conductivityregion 32 (shown as p+), typically of a conductivity of 10 18 impurities/cm 3 , is within a portion of the first region 30 at the substrate surface 14.
  • Each of the accumulation regions 18 is formed by a gate 34 of a conductive material, such as a metal or conductive polycrystalline silicon.
  • Each accumulation gate 34 is on a layer 36 of an insulating material, typicallysilicon dioxide, which is on and covers the substrate surface 14.
  • Each of the accumulation gates 34 has an edge which is directly over an edge of the first region 30 of its respective photodiode 16.
  • the accumulation gates 34 are connected by a bus line (not shown) to a source of potential (not shown) so that each accumulation gate 34 will create a potential well, indicated by dash line 38, in the substrate 12 beneath the gate 34. Since an edge of each accumulation gate 34 is directly over an edge of itsrespective photodiode 18, the potential well created by the accumulation gate 34 will be contiguous with the photodiode 18 as shown in FIG. 2.
  • the CCD shift register 20 may be of any well known construction.
  • a buried channel configuration is shown in FIG. 2.
  • the shift register 20 comprises an n-type conductivity channel region 40 (shown as n-) of impurity concentration of about 10 17 impurities/cm 3 in the substrate 12 at the surface 14.
  • the channel region 40 extends along the surface 14 spaced from and parallel to the line of the accumulation regions 18.
  • Over the channel region 40 and on the silicon dioxide layer 36 are a plurality of conductive gates 42 which are spaced along the channel region 40.
  • the gates 42 may be made of a metal or conductive polycrystalline silicon.
  • Thegates 42 are connected by bus lines (not shown) to a potential source (not shown) for selectively applying a potential to the gates 42 to operate theshift register 20.
  • each of the anti-blooming drains 24 is a region 48 of n-type conductivity (shown as n+) of impurity concentration of about 10 18 or higher impurities/cm 3 in the substrate 12 at the surface14.
  • Each drain region 48 extends along a side of its respective accumulation region 18 along the space between the CCD shift register 20 and the line of photodiodes 16.
  • the drain regions 48 are connected to a source of potential through conductive contacts 50 and a bus line (not shown).
  • Each of the transfer gates 28 and 29 is a strip of a conductive material, such as a metal or conductive polycrystalline silicon, which is on the silicon dioxide layer 36.
  • the transfer gate 29 extends over the space between the shift register 18 and the line of accumulation regions 18 and overlaps both the shift register gates 42 and the accumulation gates 34.
  • the transfer gate 29 is insulated from the shift register gates 42 and theaccumulation gates 34 by a layer 52 of silicon oxide which covers the shiftregister gates 42 and accumulation gates 34.
  • each of the anti-blooming drain gates 28 extends across the space between its respective accumulation region gate 34 and anti-blooming drain region 48.
  • a potential is applied to the regions 30 and 32 of each photodiode 16 so as to completely deplete the regions of the photodiode 16. This creates a potential well 16P in each photodiode which remains at a uniform level in the photodiode, as is shownin FIG. 4.
  • a potential is applied to each of the accumulation gates 34 so as to induce a potential well 18P in each accumulation region 18 which is deeper than the potential well 16P of the photodiode 16.
  • a potential is applied to each anti-blooming drain 24 so as to create a potential well 24P in the region 48 which is deeper thanthe potential well 18P in its adjacent accumulation region 18.
  • a potential is also applied to the gate 28 which provides a barrier potential 28P which is lower than the potential 16P in the photodiode 16.
  • the image array 10 is operated in a manner normal for CCD transfer devices.
  • a potential is applied to the transfer gate 29 which lowers the potential barrier 29P to a level low enough to allow the charge carriers stored in the accumulation region 18 to flow into the channel region 40 of the shift register 20 which is at a potential 40P below that of the accumulation regions 18.
  • charge carriers created in the photodiodes 16 constantly flow into their adjacentaccumulation regions 18. As the charge carriers flow into the accumulation regions 18, the channel potential and depletion depth in the accumulation region 18 is lowered. However, as long as the potential in the accumulation region 18 is higher than that of its adjacent pinned diode 16, the potential well in the accumulation region 38 is deeper than that in the photodiode 16.
  • the photodiode 16 operates with timeindependent response and suffers neither from lag or reset noise artifacts.Also, by having the barrier level between each accumulation region 18 and its adjacent anti-blooming drain 24 below the level of the potential well in the photodiode 16, a maximum number of charge carriers can be stored inthe accumulation region 18 while still allowing the flow of charge carriersfrom the photodiode 16 into the accumulation region 18. Accordingly, the imager 10 of the present invention has all of the benefits of a pinned photodiode photodetector, including better uniformity and good quantum efficiency, as well as having time independent response and not suffering from lag or reset noise artifacts.

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
US07/402,311 1989-09-05 1989-09-05 Charge-coupled device (CCD) imager and method of operation Expired - Lifetime US5051797A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US07/402,311 US5051797A (en) 1989-09-05 1989-09-05 Charge-coupled device (CCD) imager and method of operation
EP90913086A EP0441934A1 (fr) 1989-09-05 1990-08-29 Appareil d'imagerie a charge couplee et procede de fonctionnement
JP51230590A JP3200436B2 (ja) 1989-09-05 1990-08-29 Ｃｃｄ撮像器及びその駆動方法
PCT/US1990/004913 WO1991003838A1 (fr) 1989-09-05 1990-08-29 Appareil d'imagerie a charge couplee et procede de fonctionnement

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US07/402,311 US5051797A (en) 1989-09-05 1989-09-05 Charge-coupled device (CCD) imager and method of operation

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WO (1) WO1991003838A1 (fr)

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US5324968A (en) * 1993-11-18 1994-06-28 Eastman Kodak Company CCD image sensor
US5625210A (en) * 1995-04-13 1997-04-29 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
WO1997028558A2 (fr) * 1996-01-22 1997-08-07 California Institute Of Technology Reseau de detecteurs a pixels actifs obturables electroniquement
US5867212A (en) * 1994-09-30 1999-02-02 Fuji Photo Film Co., Ltd. Solid-state image pickup device using charge coupled devices with vacant packet transfer
US5903021A (en) * 1997-01-17 1999-05-11 Eastman Kodak Company Partially pinned photodiode for solid state image sensors
US6084259A (en) * 1998-06-29 2000-07-04 Hyundai Electronics Industries Co., Ltd. Photodiode having charge transfer function and image sensor using the same
US6180969B1 (en) 1998-02-28 2001-01-30 Hyundai Electronics Industries Co., Ltd. CMOS image sensor with equivalent potential diode
US6218210B1 (en) 1998-06-29 2001-04-17 Hyundai Electronics Industries Co., Ltd. Method for fabricating image sensor with extended pinned photodiode
US6297070B1 (en) 1996-12-20 2001-10-02 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
US6320617B1 (en) 1995-11-07 2001-11-20 Eastman Kodak Company CMOS active pixel sensor using a pinned photo diode
US6329679B1 (en) 1998-06-29 2001-12-11 Hyundai Electronics Industries Co., Ltd. Photodiode with increased photocollection area for image sensor
US6372537B1 (en) 2000-03-17 2002-04-16 Taiwan Semiconductor Manufacturing Company Pinned photodiode structure in a 3T active pixel sensor
US20020048837A1 (en) * 1998-12-03 2002-04-25 Burke Barry E. Fabrication of a high-precision blooming control structure for an image sensor
US20020171752A1 (en) * 2001-05-18 2002-11-21 Baer Richard L. Apparatus and method for reducing saturation artifacts in digital images captured using frame-transfer CCD sensor with reduced-height storage area
US6486503B1 (en) 1994-01-28 2002-11-26 California Institute Of Technology Active pixel sensor array with electronic shuttering
US6489643B1 (en) 1998-06-27 2002-12-03 Hynix Semiconductor Inc. Photodiode having a plurality of PN junctions and image sensor having the same
US6492694B2 (en) 1998-02-27 2002-12-10 Micron Technology, Inc. Highly conductive composite polysilicon gate for CMOS integrated circuits
US6566697B1 (en) 2000-11-28 2003-05-20 Dalsa, Inc. Pinned photodiode five transistor pixel
US6713796B1 (en) 2001-01-19 2004-03-30 Dalsa, Inc. Isolated photodiode
US6777659B1 (en) * 1998-05-18 2004-08-17 Rudolf Schwarte Device and method for detecting the phase and amplitude of electromagnetic waves
US20060249757A1 (en) * 2001-02-23 2006-11-09 Kamasz Stacy R Reticulated gate CCD pixel with diagonal strapping
US7212240B1 (en) * 2001-05-25 2007-05-01 Dalsa, Inc. Imager with a row of photodiodes or pinned photo diodes
CN100438060C (zh) * 2005-08-30 2008-11-26 台湾积体电路制造股份有限公司 半导体装置及其形成方法
US20100092914A1 (en) * 2008-09-10 2010-04-15 Mora Assad F Foot actuated switch
USRE42918E1 (en) 1994-01-28 2011-11-15 California Institute Of Technology Single substrate camera device with CMOS image sensor
USRE42974E1 (en) 1994-01-28 2011-11-29 California Institute Of Technology CMOS active pixel sensor type imaging system on a chip
US9348035B2 (en) 2013-10-22 2016-05-24 General Electric Company Systems and methods for selectable detector configurations
US20170263668A1 (en) * 2010-03-19 2017-09-14 Invisage Technologies, Inc. Image sensors employing sensitized semiconductor diodes
US9941316B2 (en) 2014-06-10 2018-04-10 Invisage Technologies, Inc. Multi-terminal optoelectronic devices for light detection
US9972652B2 (en) 2010-06-08 2018-05-15 Invisage Technologies, Inc. Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode

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JPH0810760B2 (ja) * 1993-01-13 1996-01-31 日本電気株式会社 固体撮像装置
FR2704978B1 (fr) * 1993-05-07 1995-06-09 Thomson Csf Semiconducteurs Dispositif à transfert de charges à grille d'étraînement.

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Cited By (43)

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Publication number Priority date Publication date Assignee Title
US5324968A (en) * 1993-11-18 1994-06-28 Eastman Kodak Company CCD image sensor
US6486503B1 (en) 1994-01-28 2002-11-26 California Institute Of Technology Active pixel sensor array with electronic shuttering
USRE42918E1 (en) 1994-01-28 2011-11-15 California Institute Of Technology Single substrate camera device with CMOS image sensor
USRE42974E1 (en) 1994-01-28 2011-11-29 California Institute Of Technology CMOS active pixel sensor type imaging system on a chip
US5867212A (en) * 1994-09-30 1999-02-02 Fuji Photo Film Co., Ltd. Solid-state image pickup device using charge coupled devices with vacant packet transfer
US6027955A (en) * 1995-04-13 2000-02-22 Eastman Kodak Company Method of making an active pixel sensor integrated with a pinned photodiode
US6100551A (en) * 1995-04-13 2000-08-08 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
US5625210A (en) * 1995-04-13 1997-04-29 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
US6320617B1 (en) 1995-11-07 2001-11-20 Eastman Kodak Company CMOS active pixel sensor using a pinned photo diode
WO1997028558A3 (fr) * 1996-01-22 1997-10-02 California Inst Of Techn Reseau de detecteurs a pixels actifs obturables electroniquement
WO1997028558A2 (fr) * 1996-01-22 1997-08-07 California Institute Of Technology Reseau de detecteurs a pixels actifs obturables electroniquement
US6297070B1 (en) 1996-12-20 2001-10-02 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
US5903021A (en) * 1997-01-17 1999-05-11 Eastman Kodak Company Partially pinned photodiode for solid state image sensors
EP0854516B1 (fr) * 1997-01-17 2010-11-17 Eastman Kodak Company Photodiode de type à couche partiellement attachée pour capteurs d'images à l'état solide
US6492694B2 (en) 1998-02-27 2002-12-10 Micron Technology, Inc. Highly conductive composite polysilicon gate for CMOS integrated circuits
US6184055B1 (en) 1998-02-28 2001-02-06 Hyundai Electronics Industries Co., Ltd. CMOS image sensor with equivalent potential diode and method for fabricating the same
US6180969B1 (en) 1998-02-28 2001-01-30 Hyundai Electronics Industries Co., Ltd. CMOS image sensor with equivalent potential diode
US6777659B1 (en) * 1998-05-18 2004-08-17 Rudolf Schwarte Device and method for detecting the phase and amplitude of electromagnetic waves
US6706550B2 (en) 1998-06-27 2004-03-16 Hyundai Electronics Industries Co, Ltd. Photodiode having a plurality of PN injections and image sensor having the same
US6489643B1 (en) 1998-06-27 2002-12-03 Hynix Semiconductor Inc. Photodiode having a plurality of PN junctions and image sensor having the same
US6218210B1 (en) 1998-06-29 2001-04-17 Hyundai Electronics Industries Co., Ltd. Method for fabricating image sensor with extended pinned photodiode
US6084259A (en) * 1998-06-29 2000-07-04 Hyundai Electronics Industries Co., Ltd. Photodiode having charge transfer function and image sensor using the same
US6787386B2 (en) 1998-06-29 2004-09-07 Hynix Semiconductor, Inc. Method of forming a photodiode for an image sensor
US6723580B2 (en) 1998-06-29 2004-04-20 Hyundai Electronics Industries Co., Ltd. Method of forming a photodiode for an image sensor
US6329679B1 (en) 1998-06-29 2001-12-11 Hyundai Electronics Industries Co., Ltd. Photodiode with increased photocollection area for image sensor
US7074639B2 (en) * 1998-12-03 2006-07-11 Massachusetts Institute Of Technology Fabrication of a high-precision blooming control structure for an image sensor
US20020048837A1 (en) * 1998-12-03 2002-04-25 Burke Barry E. Fabrication of a high-precision blooming control structure for an image sensor
US6531725B2 (en) 2000-03-17 2003-03-11 Taiwan Semiconductor Manufacturing Company Pinned photodiode structure in a 3T active pixel sensor
US6372537B1 (en) 2000-03-17 2002-04-16 Taiwan Semiconductor Manufacturing Company Pinned photodiode structure in a 3T active pixel sensor
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JP3200436B2 (ja) 2001-08-20
EP0441934A1 (fr) 1991-08-21
WO1991003838A1 (fr) 1991-03-21
JPH04501636A (ja) 1992-03-19

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