US4640585A - Semiconductor thin film lens - Google Patents

Semiconductor thin film lens Download PDF

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Publication number
US4640585A
US4640585A US06/603,757 US60375784A US4640585A US 4640585 A US4640585 A US 4640585A US 60375784 A US60375784 A US 60375784A US 4640585 A US4640585 A US 4640585A
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United States
Prior art keywords
semiconductor
thin film
film lens
sub
refractive index
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Expired - Lifetime
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US06/603,757
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English (en)
Inventor
Hidetoshi Nojiri
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Canon Inc
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Canon Inc
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Priority claimed from JP7583283A external-priority patent/JPS59201003A/ja
Priority claimed from JP59073817A external-priority patent/JPS60216301A/ja
Application filed by Canon Inc filed Critical Canon Inc
Assigned to CANON KABUSHIKI KAISHA reassignment CANON KABUSHIKI KAISHA ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: NOJIRI, HIDETOSHI
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/262—Optical details of coupling light into, or out of, or between fibre ends, e.g. special fibre end shapes or associated optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0087—Simple or compound lenses with index gradient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0267—Integrated focusing lens

Definitions

  • This invention relates to a thin film lens formed of semiconductors, and more particularly to a thin film lens suitable for condensing a laser light emitted from a semiconductor laser or the like.
  • the light emitted from a semiconductor laser is an asymmetrical elliptical beam having great angles of expanse of 30°-60° in a direction perpendicular to the joined surface and 4°-10° in a direction parallel to the joined surface. Therefore, where the light beam from a semiconductor laser, for example, is provided directly to a light waveguide or an optical fiber, the coupling efficiency is remarkably reduced. Therefore, use has heretofore been made of a coupling system as shown in FIGS. 1A and 1B of the accompanying drawings.
  • FIG. 1A is a schematic cross-sectional view of the coupling system
  • FIG. 1B is a plan view of the coupling system.
  • the asymmetrical beam 4 emitted from a semiconductor laser 1 is made into a symmetrical beam 4' by a minute diameter cylindrical lens 2 and directed into an optical fiber 3.
  • Reference numeral 5 designates a heat sink, and reference numeral 6 denotes a support jig.
  • the optic axes of the lens and the optical fiber must be exactly coincident with the light beam.
  • the diameter of the aforementioned minute diameter cylindrical lens is as small as 0.2-0.3 mm and the coupling efficiency is remarkably reduced for any deviation from the optic axis, and this has led to a disadvantage that position adjustment of the lens is very difficult.
  • the present invention achieves the above objects by a semiconductor thin film lens which comprises a semiconductor A and a semiconductor B alternately layered to thicknesses sufficiently smaller than the wavelength corresponding to the forbidden bandwidth of the semiconductor A, the semiconductors A and B satisfying the following conditions:
  • E gA is the forbidden bandwidth of the semiconductor A
  • n A is the refractive index of the semiconductor A
  • E gB is the forbidden bandwidth of the semiconductor B
  • n B is the refractive index of the semiconductor B.
  • FIGS. 1A and 1B schematically show an optical system using a conventional minute diameter cylindrical lens.
  • FIGS. 2A and 2B show the construction of a first embodiment of the semiconductor thin film lens of the present invention.
  • FIGS. 3A and 3B show the doping quantity of impurity and the index gradient in the first embodiment.
  • FIG. 4 is a schematic view illustrating a case where the first embodiment is used for the beam shaping of the laser light from a semiconductor laser.
  • FIG. 5 shows the construction of a second embodiment of the semiconductor thin film lens of the present invention.
  • FIG. 6 is a schematic view showing a case where the semiconductor thin film lens of the present invention is formed on the same substrate as a semiconductor laser.
  • FIGS. 2A and 2B schematically show the construction of a first embodiment of the present invention, FIG. 2A being a side view and FIG. 2B being a front view.
  • a GaAs layer 12 having a thickness of 100 ⁇ is formed on a GaAs substrate 11, and a Ga 0 .7 Al 0 .3 As layer 13 having a thickness of 30 ⁇ is formed thereon.
  • GaAs layers 12 each having the same thickness as that previously mentioned and Ga 0 .7 Al 0 .3 As layers 13 each having the same thickness as that previously mentioned are alternately formed thereon, thus forming a laminated member having a thickness of several to ten ⁇ m to ten and several ⁇ m as a whole.
  • Si is doped into each of the GaAs layer 12 and the Ga 0 .7 Al 0 .3 As layers 13 in the laminated member while the doping quantity thereof is gradually varied, whereby a semiconductor thin film lens 10 is constructed.
  • Table 1 shows the forbidden band width, the refractive index and the thickness of the above-described semiconductor layer.
  • the forbidden bandwidth, the refractive index and the thickness of the GaAs layer 12 are E gA , n A and d A , respectively, and the forbidden bandwidth, the refractive index and the thickness of the Ga 0 .7 Al 0 .3 As layer 13 are E gB , n B and d B , respectively, then the following conditions are satisfied:
  • the present embodiment has been constructed by endowing such a laminated member with a refractive index gradient or distribution by doping so that a lens action is created for the transmitted light.
  • FIG. 3A shows the distribution of the doping quantity of an impurity Si doped into the GaAs layers 12 and the Ga 0 .7 Al 0 .3 As layers 13 in the z-direction of of the embodiment shown in FIG. 2.
  • the doping quantity of the impurity is gradually varied in the central portion and the marginal portion of the laminated member as shown in FIG. 3A, the refractive index thereof becomes higher in the central portion thereof and lower in the marginal portion thereof, namely, on the substrate and upper layer sides, as shown in FIG. 3B. Accordingly, as seen in an ordinary light converging conductor, a light of energy less than E g which travels through the semiconductor thin film lens 10 in the y-direction in FIGS. 2A and 2B is converged so as to depict a sine curve in the z-direction.
  • the doping quantity of Si in the GaAs layer in the central portion of the semiconductor thin film lens 10 is 6.7 ⁇ 10 18 cm -3 and the doping quantity in the marginal portion thereof is 5.9 ⁇ 10 17 cm -3
  • the refractive indices in the central portion and the marginal portion become 3.73 and 3.68, respectively, for a light of energy of 1.5 eV and thus, by gradually varying the doping quantity between the central portion and the marginal portion, there can be obtained a sufficient lens action.
  • the thicknesses shown in FIGS. 2A and 2B are indicated in an arbitrary measure wherein the thickness of the semiconductor thin film lens 10 in the z-direction is D, and S in FIG. 2B designates the substrate portion.
  • the relation between the amount of dopant and the refractive index is varied by the wavelength of the light used, and even where Si is used, for a light of energy of 1.4 eV, as the amount of dopant is smaller, the refractive index becomes higher.
  • Such a relation is widely known as a characteristic of semiconductor elements and it is necessary that the distribution of the amount of dopant be set in accordance with the specification of the lens made and the wavelength used.
  • the dopant is not limited to Si which is an n-type impurity, but may also be other n-type impurities or Be which is a p-type impurity.
  • the GaAs layers 12 and the Ga 0 .7 Al 0 .3 As layers 13 in the above-described embodiment may be formed by growing thin film crystals as in a case where a semiconductor element is manufactured by the use of molecular beam epitaxy (MBE) or vapor phase epitaxy (VPE).
  • MBE molecular beam epitaxy
  • VPE vapor phase epitaxy
  • doping can be accomplished by mixing an impurity with the atmosphere, and depending on in which portion (the central portion or the marginal portion) of the semiconductor thin film lens the layers of crystals are growing, the growth condition (for example, in the case of MBE, the temperature of cells which produce the molecular beam of Si) is varied to thereby obtain the desired doping quantity distribution as shown in FIG. 2A.
  • the semiconductor thin film lens according to the above-described embodiment can be used in the manner as shown, for example, in FIG. 4.
  • the asymmetrical beam emitted from a semiconductor laser 15 enters the semiconductor thin film lens 10 and is subjected to a converging action only in the z-direction.
  • the lens length l so that the diverging angle of the beam in the z-direction becomes equal to the diverging angle of the beam in the x-direction
  • the asymmetrical beam emitted from the semiconductor laser can be shaped and taken out as a circular symmetrical beam 16.
  • the light thus passed through the semiconductor thin film lens can be optically coupled to an optical fiber or a thin film waveguide.
  • the semiconductor thin film lens according to the present embodiment is made on a substrate by the use of conventional semiconductor element manufacturing techniques and therefore can be formed compactly and precisely, and adjustment of its optic axis can be accomplished simply by adjusting the positional relation between the substrate and the semiconductor laser or the like.
  • gratings 14 can be provided at the opposite ends of the lens as shown in FIG. 2B to endow the lens with a lens action also in the x-direction, but where the lens action only in the z-direction suffices, the gratings 14 are not always necessary.
  • FIG. 5 is a schematic side view showing the construction of a second embodiment of the present invention.
  • GaAs layers 22 and Ga 0 .7 Al 0 .3 As layers 23 are alternately layered on GaAs substrate 21 to thereby form a thin film lens 20 having a thickness of several to ten ⁇ m and several ⁇ m as a whole.
  • no impurity is doped into the semiconductor layers and a refractive index gradient having a lens action is obtained by gradually varying the thickness of each semiconductor layer.
  • each semiconductor layer satisfies formula (1) and the thicknesses d A1 , d A2 , . . .
  • the thin film lens according to the present embodiment transmits therethrough light having energy less than a predetermined level, but the effective refractive index is varied in the z-direction by a variation in thickness of the semiconductor layers, and the thin film lens as a whole behaves as a substance having a certain refractive index gradient.
  • an effective refractive index 3.22 is obtained near the substrate and an effective refractive index 3.48 is obtained near the central portion, for a light of energy 1.5 eV.
  • an effective refractive index 3.22 is obtained near the upper end portion.
  • the semiconductor thin film lens according to the present embodiment like the first embodiment, has the index gradient as shown in FIG. 3B in the z-direction, and the light travelling through this thin film lens in the y-direction is converged in the z-direction.
  • the semiconductor thin film lens according to this embodiment is formed by growing semiconductor layers into thin film crystals on the substrate by the use of MBE or VPE.
  • the thickness of each semiconductor layer for example, in the case of MBE, can be accurately controlled on the order one angstrom by adjustment of the growth time.
  • the present embodiment also can be used in combination with a semiconductor laser, as shown in FIG. 4.
  • a semiconductor laser as shown in FIG. 4.
  • the index gradient can be made steep and thus, a lens having a short lens length l can be obtained.
  • the semiconductor thin film lens of the present invention as shown in the first and second embodiments can be constructed monolithically with a semiconductor laser.
  • a semiconductor laser For example, as shown in FIG. 6, an ordinary GaAs-GaAlAs semiconductor laser 35 is made on a GaAs substrate 31 by the use of the ordinary semiconductor manufacturing technique, and this semiconductor laser is masked, whereafter GaAs layers 32 and Ga 0 .7 Al 0 .3 AS layers 33 are alternately layered on the same substrate, and then the mask is removed to thereby form a semiconductor thin film lens 30.
  • the semiconductor laser 35 and the semiconductor thin film lens 30 are formed integrally with each other and therefore, mutual positional adjustment thereof is unnecessary and a compact light source system which emits a symmetrical beam is constructed.
  • a light waveguide or the like may be hybridly formed on the same substrate, whereby it is applicable to an integrated optical compound element or the like.
  • GaAs and GaAlAs have been used as the semiconductor, but the present invention can also be constructed by the use of plural conglomerates of other III-V group semiconductors or II-VI group semiconductors or the like.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
US06/603,757 1983-04-28 1984-04-25 Semiconductor thin film lens Expired - Lifetime US4640585A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP58-75832 1983-04-28
JP7583283A JPS59201003A (ja) 1983-04-28 1983-04-28 半導体薄膜レンズ
JP59073817A JPS60216301A (ja) 1984-04-11 1984-04-11 半導体薄膜レンズ
JP59-73817 1984-04-11

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Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4744620A (en) * 1984-10-30 1988-05-17 Nippon Sheet Glass Co., Ltd. Optical coupler
US4752109A (en) * 1986-09-02 1988-06-21 Amp Incorporated Optoelectronics package for a semiconductor laser
US4752108A (en) * 1985-01-31 1988-06-21 Alcatel N.V. Integrated optical lens/coupler
US4762395A (en) * 1986-09-02 1988-08-09 Amp Incorporated Lens assembly for optical coupling with a semiconductor laser
US4762386A (en) * 1986-09-02 1988-08-09 Amp Incorporated Optical fiber assembly including means utilizing a column load to compensate for thermal effects
US4818053A (en) * 1986-09-02 1989-04-04 Amp Incorporated Optical bench for a semiconductor laser and method
US4953947A (en) * 1986-08-08 1990-09-04 Corning Incorporated Dispersion transformer having multichannel fiber
US4995696A (en) * 1988-05-20 1991-02-26 Oki Electric Industry Co., Ltd. Optical amplifier module
US5080739A (en) * 1990-06-07 1992-01-14 The United States Of America As Represented By The Secretary Of The Air Force Method for making a beam splitter and partially transmitting normal-incidence mirrors for soft x-rays
US5917105A (en) * 1995-03-08 1999-06-29 Lightpath Technologies, Inc. Method of manufacturing a grin lens
US20020064343A1 (en) * 2000-11-30 2002-05-30 Mitsuo Ukechi Optical coupling device with anisotropic light-guiding member
US20020089758A1 (en) * 2001-01-05 2002-07-11 Nikon Corporation Optical component thickness adjustment method, optical component, and position adjustment method for optical component
US20040042729A1 (en) * 2002-08-28 2004-03-04 Phosistor Technologies, Inc. Optical beam transformer module for light coupling between a fiber array and a photonic chip and the method of making the same
WO2003075052A3 (en) * 2002-02-28 2004-04-01 Sarnoff Corp Amorphous silicon alloy based integrated spot-size converter
US20050036738A1 (en) * 2002-08-28 2005-02-17 Phosistor Technologies, Inc. Varying refractive index optical medium using at least two materials with thicknesses less than a wavelength
MD2646G2 (ro) * 2004-04-28 2005-08-31 Ион ТИГИНЯНУ Procedeu de obţinere a lentilelor în baza semiconductoarelor cu gradient al indicelui de refracţie
EP1687664A4 (en) * 2003-11-14 2009-12-30 Eric Baer MULTILAYER POLYMER LENSES WITH INDEX GRADIENT (GRIN)
US20100135615A1 (en) * 2002-08-28 2010-06-03 Seng-Tiong Ho Apparatus for coupling light between input and output waveguides
US20150198750A1 (en) * 2011-09-01 2015-07-16 Chromx, Llc. Highly dispersive optical element with binary transmissibility
CN113285000A (zh) * 2021-05-14 2021-08-20 衢州职业技术学院 薄膜、安装结构、led芯片结构、led灯和光束角度调节方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2984062B2 (ja) * 1995-03-08 1999-11-29 ライトパス・テクノロジーズ・インコーポレイテッド Ｇｒｉｎレンズ及びその製造方法
ATE257947T1 (de) 2000-08-11 2004-01-15 Avanex Corp Modenfeldumwandler für eine höchsteffiziente kopplung in optischen modulen

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US3427627A (en) * 1966-06-13 1969-02-11 Armstrong Cork Co Stacked dielectric disc lens having differing radial dielectric gradations
US3894789A (en) * 1973-08-02 1975-07-15 Nippon Electric Co Light beam coupler for semiconductor lasers
US4025157A (en) * 1975-06-26 1977-05-24 The United States Of America As Represented By The Secretary Of The Navy Gradient index miniature coupling lens
JPS5269643A (en) * 1975-12-08 1977-06-09 Toshiba Corp Optical lens
US4152044A (en) * 1977-06-17 1979-05-01 International Telephone And Telegraph Corporation Galium aluminum arsenide graded index waveguide

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US4176208A (en) * 1978-11-24 1979-11-27 Honeywell Inc. Production of inhomogeneous films by sequential layers of homogeneous films
DE3329510A1 (de) * 1983-08-16 1985-02-28 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zur herstellung eines lichtbeugenden bauelementes

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US2596251A (en) * 1948-10-01 1952-05-13 Bell Telephone Labor Inc Wave guide lens system
US3427627A (en) * 1966-06-13 1969-02-11 Armstrong Cork Co Stacked dielectric disc lens having differing radial dielectric gradations
US3894789A (en) * 1973-08-02 1975-07-15 Nippon Electric Co Light beam coupler for semiconductor lasers
US4025157A (en) * 1975-06-26 1977-05-24 The United States Of America As Represented By The Secretary Of The Navy Gradient index miniature coupling lens
JPS5269643A (en) * 1975-12-08 1977-06-09 Toshiba Corp Optical lens
US4152044A (en) * 1977-06-17 1979-05-01 International Telephone And Telegraph Corporation Galium aluminum arsenide graded index waveguide

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Van Der Ziel, "Phase-Matched Harmonic Generation in a Laminar Structure With . . . ," Appl. Phys. Lett., vol. 26, No. 2, Jan. 1975, pp. 60-61.
Van Der Ziel, Phase Matched Harmonic Generation in a Laminar Structure With . . . , Appl. Phys. Lett., vol. 26, No. 2, Jan. 1975, pp. 60 61. *

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4744620A (en) * 1984-10-30 1988-05-17 Nippon Sheet Glass Co., Ltd. Optical coupler
US4752108A (en) * 1985-01-31 1988-06-21 Alcatel N.V. Integrated optical lens/coupler
US4953947A (en) * 1986-08-08 1990-09-04 Corning Incorporated Dispersion transformer having multichannel fiber
US4752109A (en) * 1986-09-02 1988-06-21 Amp Incorporated Optoelectronics package for a semiconductor laser
US4762395A (en) * 1986-09-02 1988-08-09 Amp Incorporated Lens assembly for optical coupling with a semiconductor laser
US4762386A (en) * 1986-09-02 1988-08-09 Amp Incorporated Optical fiber assembly including means utilizing a column load to compensate for thermal effects
US4818053A (en) * 1986-09-02 1989-04-04 Amp Incorporated Optical bench for a semiconductor laser and method
US4995696A (en) * 1988-05-20 1991-02-26 Oki Electric Industry Co., Ltd. Optical amplifier module
US5080739A (en) * 1990-06-07 1992-01-14 The United States Of America As Represented By The Secretary Of The Air Force Method for making a beam splitter and partially transmitting normal-incidence mirrors for soft x-rays
US5917105A (en) * 1995-03-08 1999-06-29 Lightpath Technologies, Inc. Method of manufacturing a grin lens
US20020064343A1 (en) * 2000-11-30 2002-05-30 Mitsuo Ukechi Optical coupling device with anisotropic light-guiding member
EP1211530A3 (en) * 2000-11-30 2003-05-14 Japan Aviation Electronics Industry, Limited Optical coupling device with anisotropic light-guiding member
US20020089758A1 (en) * 2001-01-05 2002-07-11 Nikon Corporation Optical component thickness adjustment method, optical component, and position adjustment method for optical component
US7177086B2 (en) 2001-01-05 2007-02-13 Nikon Corporation Optical component thickness adjustment method, optical component, and position adjustment method for optical component
US6876498B2 (en) 2001-01-05 2005-04-05 Nikon Corporation Optical component thickness adjustment method and optical component
US20040184157A1 (en) * 2001-01-05 2004-09-23 Nikon Corporation Optical component thickness adjustment method and optical component
WO2003075052A3 (en) * 2002-02-28 2004-04-01 Sarnoff Corp Amorphous silicon alloy based integrated spot-size converter
US6888984B2 (en) 2002-02-28 2005-05-03 Sarnoff Corporation Amorphous silicon alloy based integrated spot-size converter
US20090046979A1 (en) * 2002-08-28 2009-02-19 Phosistor Technologies, Inc. Varying refractive index optical medium using at least two materials with thicknesses less than a wavelength
US20040042729A1 (en) * 2002-08-28 2004-03-04 Phosistor Technologies, Inc. Optical beam transformer module for light coupling between a fiber array and a photonic chip and the method of making the same
US7303339B2 (en) 2002-08-28 2007-12-04 Phosistor Technologies, Inc. Optical beam transformer module for light coupling between a fiber array and a photonic chip and the method of making the same
US7426328B2 (en) * 2002-08-28 2008-09-16 Phosistor Technologies, Inc. Varying refractive index optical medium using at least two materials with thicknesses less than a wavelength
US20050036738A1 (en) * 2002-08-28 2005-02-17 Phosistor Technologies, Inc. Varying refractive index optical medium using at least two materials with thicknesses less than a wavelength
US7616856B2 (en) * 2002-08-28 2009-11-10 Phosistor Technologies, Inc. Varying refractive index optical medium using at least two materials with thicknesses less than a wavelength
US20100135615A1 (en) * 2002-08-28 2010-06-03 Seng-Tiong Ho Apparatus for coupling light between input and output waveguides
US8538208B2 (en) 2002-08-28 2013-09-17 Seng-Tiong Ho Apparatus for coupling light between input and output waveguides
EP1687664A4 (en) * 2003-11-14 2009-12-30 Eric Baer MULTILAYER POLYMER LENSES WITH INDEX GRADIENT (GRIN)
MD2646G2 (ro) * 2004-04-28 2005-08-31 Ион ТИГИНЯНУ Procedeu de obţinere a lentilelor în baza semiconductoarelor cu gradient al indicelui de refracţie
US20150198750A1 (en) * 2011-09-01 2015-07-16 Chromx, Llc. Highly dispersive optical element with binary transmissibility
CN113285000A (zh) * 2021-05-14 2021-08-20 衢州职业技术学院 薄膜、安装结构、led芯片结构、led灯和光束角度调节方法

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DE3415576A1 (de) 1984-10-31
DE3415576C2 (enrdf_load_stackoverflow) 1992-05-07

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