MD2646G2 - Procedeu de obţinere a lentilelor în baza semiconductoarelor cu gradient al indicelui de refracţie - Google Patents

Procedeu de obţinere a lentilelor în baza semiconductoarelor cu gradient al indicelui de refracţie Download PDF

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Publication number
MD2646G2
MD2646G2 MDA20040096A MD20040096A MD2646G2 MD 2646 G2 MD2646 G2 MD 2646G2 MD A20040096 A MDA20040096 A MD A20040096A MD 20040096 A MD20040096 A MD 20040096A MD 2646 G2 MD2646 G2 MD 2646G2
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MD
Moldova
Prior art keywords
refractive index
semiconductors
base
index gradient
dose
Prior art date
Application number
MDA20040096A
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English (en)
Russian (ru)
Other versions
MD2646F1 (ro
Inventor
Ион ТИГИНЯНУ
Вячеслав УРСАКИ
Лилиан СЫРБУ
Вячеслав ПОПА
Original Assignee
Ион ТИГИНЯНУ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Ион ТИГИНЯНУ filed Critical Ион ТИГИНЯНУ
Priority to MDA20040096A priority Critical patent/MD2646G2/ro
Publication of MD2646F1 publication Critical patent/MD2646F1/ro
Publication of MD2646G2 publication Critical patent/MD2646G2/ro

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Abstract

Invenţia se referă la optoelectronică, în particular la lentile cu gradient al indicelui de refracţie.Esenţa invenţiei constă în faptul că într-un substrat de semiconductor se implantează ioni cu o doză de energie înaltă, determinată de relaţiaD = αR2,unde:D - doza energiei înalte a ionilor implantaţi,R - distanţa de la centru până la periferia stratului,α - gradientul dozei,apoi se efectuează decaparea electrochimică.
MDA20040096A 2004-04-28 2004-04-28 Procedeu de obţinere a lentilelor în baza semiconductoarelor cu gradient al indicelui de refracţie MD2646G2 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20040096A MD2646G2 (ro) 2004-04-28 2004-04-28 Procedeu de obţinere a lentilelor în baza semiconductoarelor cu gradient al indicelui de refracţie

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20040096A MD2646G2 (ro) 2004-04-28 2004-04-28 Procedeu de obţinere a lentilelor în baza semiconductoarelor cu gradient al indicelui de refracţie

Publications (2)

Publication Number Publication Date
MD2646F1 MD2646F1 (ro) 2004-12-31
MD2646G2 true MD2646G2 (ro) 2005-08-31

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MDA20040096A MD2646G2 (ro) 2004-04-28 2004-04-28 Procedeu de obţinere a lentilelor în baza semiconductoarelor cu gradient al indicelui de refracţie

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3811G2 (ro) * 2007-11-06 2009-08-31 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a zonelor nanostructurale semiconductoare

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4640585A (en) * 1983-04-28 1987-02-03 Canon Kabushiki Kaisha Semiconductor thin film lens
US6088166A (en) * 1998-12-22 2000-07-11 Dicon Fiberoptics, Inc. Miniaturization of gradient index lens used in optical components
JP2003238192A (ja) * 2002-02-08 2003-08-27 Fujikura Ltd 屈折率分布型レンズの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4640585A (en) * 1983-04-28 1987-02-03 Canon Kabushiki Kaisha Semiconductor thin film lens
US6088166A (en) * 1998-12-22 2000-07-11 Dicon Fiberoptics, Inc. Miniaturization of gradient index lens used in optical components
JP2003238192A (ja) * 2002-02-08 2003-08-27 Fujikura Ltd 屈折率分布型レンズの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3811G2 (ro) * 2007-11-06 2009-08-31 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a zonelor nanostructurale semiconductoare

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MD2646F1 (ro) 2004-12-31

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KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees