MD2646G2 - Способ получения линз на основе полупроводников с градиентом козффициэнта преломления - Google Patents
Способ получения линз на основе полупроводников с градиентом козффициэнта преломления Download PDFInfo
- Publication number
- MD2646G2 MD2646G2 MDA20040096A MD20040096A MD2646G2 MD 2646 G2 MD2646 G2 MD 2646G2 MD A20040096 A MDA20040096 A MD A20040096A MD 20040096 A MD20040096 A MD 20040096A MD 2646 G2 MD2646 G2 MD 2646G2
- Authority
- MD
- Moldova
- Prior art keywords
- refractive index
- semiconductors
- base
- index gradient
- dose
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 238000005554 pickling Methods 0.000 abstract 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Изобретение относится к оптоэлектронике, и в частности к линзам с градиентом коэффициента преломления.Сущность изобретения заключается в том, что в полупроводниковой подложке имплантируют ионы с дозой высокой энергии, определяемой соотношениемD=αR2,гдеD - доза высокой энергии имплантируемых ионов,R - расстояние от центра до периферии подложки,α - градиент дозы,а затем осуществляют электрохимическое травление.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20040096A MD2646G2 (ru) | 2004-04-28 | 2004-04-28 | Способ получения линз на основе полупроводников с градиентом козффициэнта преломления |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20040096A MD2646G2 (ru) | 2004-04-28 | 2004-04-28 | Способ получения линз на основе полупроводников с градиентом козффициэнта преломления |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD2646F1 MD2646F1 (en) | 2004-12-31 |
| MD2646G2 true MD2646G2 (ru) | 2005-08-31 |
Family
ID=34132348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDA20040096A MD2646G2 (ru) | 2004-04-28 | 2004-04-28 | Способ получения линз на основе полупроводников с градиентом козффициэнта преломления |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD2646G2 (ru) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD3811G2 (ru) * | 2007-11-06 | 2009-08-31 | Институт Прикладной Физики Академии Наук Молдовы | Способ получения полупроводниковых наноструктурных зон |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4640585A (en) * | 1983-04-28 | 1987-02-03 | Canon Kabushiki Kaisha | Semiconductor thin film lens |
| US6088166A (en) * | 1998-12-22 | 2000-07-11 | Dicon Fiberoptics, Inc. | Miniaturization of gradient index lens used in optical components |
| JP2003238192A (ja) * | 2002-02-08 | 2003-08-27 | Fujikura Ltd | 屈折率分布型レンズの製造方法 |
-
2004
- 2004-04-28 MD MDA20040096A patent/MD2646G2/ru not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4640585A (en) * | 1983-04-28 | 1987-02-03 | Canon Kabushiki Kaisha | Semiconductor thin film lens |
| US6088166A (en) * | 1998-12-22 | 2000-07-11 | Dicon Fiberoptics, Inc. | Miniaturization of gradient index lens used in optical components |
| JP2003238192A (ja) * | 2002-02-08 | 2003-08-27 | Fujikura Ltd | 屈折率分布型レンズの製造方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD3811G2 (ru) * | 2007-11-06 | 2009-08-31 | Институт Прикладной Физики Академии Наук Молдовы | Способ получения полупроводниковых наноструктурных зон |
Also Published As
| Publication number | Publication date |
|---|---|
| MD2646F1 (en) | 2004-12-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| PT1989740E (pt) | Método de marcação de células solares e célula solar | |
| SG143125A1 (en) | Chromium-free etching solution for si-substrates and sige-substrates, method for revealing defects using the etching solution and process for treating si-substrates and sige-substrates using the etching solution | |
| EP2578729A4 (en) | METHOD OF PREPARING BLACK SILICON BY MEANS OF PLASMAIMMERSIONSION IMPLANTATION | |
| TW200715380A (en) | Process for lateral disjonting of a semiconductor wafer and opto-electronic element | |
| MY143355A (en) | Process for transesterification | |
| TW200518209A (en) | Transparent amorphous carbon structure in semiconductor devices | |
| WO2011071937A3 (en) | Method of cleaning and forming a negatively charged passivation layer over a doped region | |
| TW200802704A (en) | Method of fabricating a precision buried resistor | |
| AR072151A1 (es) | Metodo para producir lentes de contacto de hidrogel de silicona | |
| MX2013001008A (es) | Metodo para producir un dispositivo de emision de luz. | |
| MY167102A (en) | Method for forming diffusion regions in a silicon substrate | |
| TW200608492A (en) | System for modifying small structures | |
| MY158973A (en) | Method for producing solar cell and film-producing device | |
| TW200637041A (en) | Nitride semiconductor light-emitting device and method for fabrication thereof | |
| WO2011126772A3 (en) | Continuously optimized solar cell metallization design through feed-forward process | |
| MY162202A (en) | Methods of treating a semiconductor layer | |
| WO2010138646A3 (en) | Methods and apparatus for measuring ion implant dose | |
| SG142223A1 (en) | Methods for characterizing defects on silicon surfaces, etching composition for silicon surfaces and process of treating silicon surfaces with the etching composition | |
| TW200603291A (en) | Method of impurity introduction, impurity introduction apparatus and semiconductor device produced with use of the method | |
| TW200617369A (en) | Method to inspect a wafer | |
| BR112012027611A2 (pt) | dispositivo e método para texturizar mecanicamente uma pastilha de silício destinada a compreender uma célula fotovoltaica e pastilha de silício resultante | |
| NO20081386L (no) | Method for texturing silicon surfaces and wafers thereof | |
| MD2646G2 (ru) | Способ получения линз на основе полупроводников с градиентом козффициэнта преломления | |
| WO2005045941A3 (de) | Verfahren zur herstellung einer antireflektierenden oberfläche auf optischen integrierten schaltkreisen | |
| GB201209693D0 (en) | Silicon wafer coated with a passivation layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
| MM4A | Patent for invention definitely lapsed due to non-payment of fees |