MD2646F1 - Process for obtaining lens on base of semiconductors with refractive index gradient - Google Patents
Process for obtaining lens on base of semiconductors with refractive index gradientInfo
- Publication number
- MD2646F1 MD2646F1 MDA20040096A MD20040096A MD2646F1 MD 2646 F1 MD2646 F1 MD 2646F1 MD A20040096 A MDA20040096 A MD A20040096A MD 20040096 A MD20040096 A MD 20040096A MD 2646 F1 MD2646 F1 MD 2646F1
- Authority
- MD
- Moldova
- Prior art keywords
- refractive index
- semiconductors
- base
- index gradient
- dose
- Prior art date
Links
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The invention refers to the optoelectronics, in particular to the lens with refractive index gradient.Summary of the invention consists in that into a semiconductor substrate there are implanted ions with a dose of high energy, determined by the relation:D = aR2,where:D - the dose of high energy of the implanted ions,R - the distance from the centre up to the substrate periphery,a - the dose gradient,then it is carried out the electrochemical pickling.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20040096A MD2646G2 (en) | 2004-04-28 | 2004-04-28 | Process for obtaining lens on base of semiconductors with refractive index gradient |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20040096A MD2646G2 (en) | 2004-04-28 | 2004-04-28 | Process for obtaining lens on base of semiconductors with refractive index gradient |
Publications (2)
Publication Number | Publication Date |
---|---|
MD2646F1 true MD2646F1 (en) | 2004-12-31 |
MD2646G2 MD2646G2 (en) | 2005-08-31 |
Family
ID=34132348
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MDA20040096A MD2646G2 (en) | 2004-04-28 | 2004-04-28 | Process for obtaining lens on base of semiconductors with refractive index gradient |
Country Status (1)
Country | Link |
---|---|
MD (1) | MD2646G2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD3811G2 (en) * | 2007-11-06 | 2009-08-31 | Институт Прикладной Физики Академии Наук Молдовы | Process for obtaining semiconductor nanostructural zones |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4640585A (en) * | 1983-04-28 | 1987-02-03 | Canon Kabushiki Kaisha | Semiconductor thin film lens |
US6088166A (en) * | 1998-12-22 | 2000-07-11 | Dicon Fiberoptics, Inc. | Miniaturization of gradient index lens used in optical components |
JP2003238192A (en) * | 2002-02-08 | 2003-08-27 | Fujikura Ltd | Method for producing gradient index lens |
-
2004
- 2004-04-28 MD MDA20040096A patent/MD2646G2/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
MD2646G2 (en) | 2005-08-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
MM4A | Patent for invention definitely lapsed due to non-payment of fees |