MD2646F1 - Procedeu de obtinere a lentilelor in baza semiconductoarelor cu gradient al indicelui de refractie - Google Patents
Procedeu de obtinere a lentilelor in baza semiconductoarelor cu gradient al indicelui de refractieInfo
- Publication number
- MD2646F1 MD2646F1 MDA20040096A MD20040096A MD2646F1 MD 2646 F1 MD2646 F1 MD 2646F1 MD A20040096 A MDA20040096 A MD A20040096A MD 20040096 A MD20040096 A MD 20040096A MD 2646 F1 MD2646 F1 MD 2646F1
- Authority
- MD
- Moldova
- Prior art keywords
- refractive index
- semiconductors
- base
- index gradient
- dose
- Prior art date
Links
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Inventia se refera la optoelectronica, in particular la lentile cu gradient al indicelui de refractie.Esenta inventiei consta in faptul ca intr-un substrat de semiconductor se implanteaza ioni cu o doza de energie inalta, determinata de relatiaD = ?R2,unde:D - doza energiei inalte a ionilor implantati,R - distanta de la centru pana la periferia stratului,? - gradientul dozei,apoi se efectueaza decaparea electrochimica. ŕ
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20040096A MD2646G2 (ro) | 2004-04-28 | 2004-04-28 | Procedeu de obţinere a lentilelor în baza semiconductoarelor cu gradient al indicelui de refracţie |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20040096A MD2646G2 (ro) | 2004-04-28 | 2004-04-28 | Procedeu de obţinere a lentilelor în baza semiconductoarelor cu gradient al indicelui de refracţie |
Publications (2)
Publication Number | Publication Date |
---|---|
MD2646F1 true MD2646F1 (ro) | 2004-12-31 |
MD2646G2 MD2646G2 (ro) | 2005-08-31 |
Family
ID=34132348
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MDA20040096A MD2646G2 (ro) | 2004-04-28 | 2004-04-28 | Procedeu de obţinere a lentilelor în baza semiconductoarelor cu gradient al indicelui de refracţie |
Country Status (1)
Country | Link |
---|---|
MD (1) | MD2646G2 (ro) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD3811G2 (ro) * | 2007-11-06 | 2009-08-31 | Институт Прикладной Физики Академии Наук Молдовы | Procedeu de obţinere a zonelor nanostructurale semiconductoare |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4640585A (en) * | 1983-04-28 | 1987-02-03 | Canon Kabushiki Kaisha | Semiconductor thin film lens |
US6088166A (en) * | 1998-12-22 | 2000-07-11 | Dicon Fiberoptics, Inc. | Miniaturization of gradient index lens used in optical components |
JP2003238192A (ja) * | 2002-02-08 | 2003-08-27 | Fujikura Ltd | 屈折率分布型レンズの製造方法 |
-
2004
- 2004-04-28 MD MDA20040096A patent/MD2646G2/ro not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
MD2646G2 (ro) | 2005-08-31 |
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MD2646F1 (ro) | Procedeu de obtinere a lentilelor in baza semiconductoarelor cu gradient al indicelui de refractie |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
MM4A | Patent for invention definitely lapsed due to non-payment of fees |