US4430586A - Switch with an MIS-FET operated as a source follower - Google Patents

Switch with an MIS-FET operated as a source follower Download PDF

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Publication number
US4430586A
US4430586A US06/262,648 US26264881A US4430586A US 4430586 A US4430586 A US 4430586A US 26264881 A US26264881 A US 26264881A US 4430586 A US4430586 A US 4430586A
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United States
Prior art keywords
fet
transistor
source
electrode
voltage
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Expired - Fee Related
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US06/262,648
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English (en)
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Ernst Hebenstreit
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Siemens AG
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Siemens AG
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Assigned to SIEMENS AKTIENGESELLSCHAFT, A CORP. OF GERMANY reassignment SIEMENS AKTIENGESELLSCHAFT, A CORP. OF GERMANY ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: HEBENSTREIT, ERNST
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit

Definitions

  • the invention relates to a switch with an MIS-FET operated as a source follower, a capacitor which is connected, with one of its leads, to the source electrode of the FET and can charge the gatesource capacitance of the FET through the switching path of a first auxiliary transistor, wherein the capacitor can be connected with its other lead through a diode to one terminal of a voltage source in such a manner that it is charged if the first auxiliary transistor is cut off, and a second auxiliary transistor being provided which cuts off the first auxiliary transistor upon opening.
  • Such a switch has been described, for instance, in "VMOS Power FETs Design Catalog", January 1979, FIG. 20, of the firm Siliconix.
  • two auxiliary npn-transistors are used which are coupled to each other so that the second one is cut off when the first auxiliary transistor is switched into conduction, and vice versa. If the second auxiliary transistor is cut off, a so-called bootstrap capacitor is charged up from a fixed voltage. When this second auxiliary transistor is switched into conduction, the bootstrap capacitor can discharge and charges the gate-source capacitance of the FET to the required control voltage and makes the latter conduct.
  • the bipolar auxiliary transistors are connected to practically the same voltage as the FET.
  • a switch comprising an MIS-FET having a source and a gate or gate electrode defining a control-source capacitance and being operated as a source follower for switching a given voltage, a first capacitor, a first auxiliary transistor, a second auxiliary transistor cutting off the first transistor when switched into a conducting state, the transistors each having a base, a collector and an emitter electrode defining a switching path, the collectors of each of the transistors being connected to the control electrode of the FET, a control input terminal, second and third capacitors each being connected between the control input terminal and the base of a respective one of the transistors, the emitter electrode of the second transistor being connected to the source electrode of the FET, the first capacitor having one lead connected to the emitter electrode of the first transistor and to the source electrode of the FET for charging the gate-source capacitance of the FET through the switching path of the first transistor, and another lead connected to the emitter electrode of the first
  • a diode connected between the other lead of the first capacitor and the terminal of the voltage source.
  • the first transistor is a pnp-transistor
  • the second transistor is an npn-transistor
  • the MIS-FET is of the n-channel type, or vice versa.
  • a first and a second diode each connected antiparallel between the emitter and the base, i.e. the emitter-base path, of each of the transistors.
  • a first and a second resistor each shunted between the emitter and base, i.e. the emitter-base path, of each of the transistors.
  • the MIS-FET includes a drain electrode, and there is provided another FET being of the same type or the first-mentioned FET and having a source, a drain and a control electrode, a load having terminals, and another input terminal, the drain electrode of the other FET being connected to the source electrode of the first-mentioned FET, the drain electrode of the first-mentioned FET being connected to a positive potential and the source electrode of the other FET being connected to a negative potential, with respect to the source electrodes, the source electrode of the first-mentioned FET and the drain electrode of the other FET being connected to one of the terminals of the load, the control electrode of the other FET being connected to the first-mentioned input terminal, and the source electrode of the other FET being connected to the other input terminal, i.e. the source forms the other input terminal.
  • FIG. 1 is a schematic circuit diagram of an on-off switch of a first embodiment of the invention.
  • FIG. 2 is a schematic circuit diagram and diagrammatic view of a double-throw switch according to a second embodiment of the invention, developed from the switch according to FIG. 1.
  • the switch shown therein substantially includes a control section 1 and a power MIS-FET 2 (metal-isolated semiconductor field-effect transistor) which is connected to a supply voltage +V B in series with a load 3.
  • the load is connected between the source electrode 8 of the FET and ground.
  • the FET 2 is therefore operated as a so-called source-follower.
  • Such switches can advantageously be used, for instance, for throttle converters.
  • the control section 1 of the switch which is framed by a dot-dash line in FIG. 1, has two mutually complementary auxiliary transistors 11 and 12.
  • the auxiliary transistor 11 is a pnp-transistor and the auxiliary transistor 12 is an npn-transistor.
  • the auxiliary transistors When using a p-channel FET, the auxiliary transistors would be of the npn-and pnp-type, respectively.
  • the auxiliary transistor 12 is shunted across the gate-source path of the FET 2, which is characterized by the gate-source capacitor 10.
  • the capacitor 10 is further shunted by a series circuit including the collector-emitter path of the auxiliary transistor 11 and a bootstrap capacity 14.
  • One lead of this capacitor 14 is furthermore connected through a diode 13 to an auxiliary voltage source having a voltage +V h .
  • This auxiliary voltage may be, for instance, 10 V while the supply voltage +V B can be around 50 to 100 V or higher.
  • the other lead of the capacitor 14 is connected to the source electrode 8 of the FET 2.
  • the drain electrode 7 is connected to a positive voltage.
  • the control electrodes or bases of both auxiliary transistors 11, 12 are connected to each other through capacitors 17, 18.
  • the junction point is the input terminal 4 of the switch; depending on the property of the voltage source, a resistor 19 may be further inserted.
  • the second input terminal of the switch is designated with reference character 5.
  • the terminal 5 is connected to ground. To eliminate the directional effect of the emitter-base paths of the auxiliary transistors 11 and 12, these can be shunted by antiparallel-connected diodes 15, 16. These diodes may also be replaced by resistors.
  • the bootstrap capacitor 14 is charged with the polarity indicated by the auxiliary voltage V h . Then, the control voltage V e at the terminals 4 and 5 is lowered from the level H to the level L. A negative control pulse which opens the auxiliary transistor 11 is therefore fed to the base terminal of the auxiliary transistor 11 through the capacitor 17. The capacitor 14 can then discharge and charge the capacitor 10 through the emitter-collector path of the auxiliary transistor 11. The FET 2 therefore begins to conduct and the potential at point 6 rises. At the same time, the potential at the control electrode 9 of the FET 2 is increased while the discharge of the capacitor 14 lasts until capacitor 10 is charged. For this purpose, the capacitor 14 must be larger than the capacitor 10.
  • the auxiliary transistor 12 is cut off by the same negative pulse.
  • the auxiliary transistor 12 remains cut off if it should already have been cut off due to the decay of a positive capacitive control current. A discharge of the capacitor 10 through this auxiliary transistor is thus avoided.
  • the FET 2 now remains open as long as the capacitor 10 is charged with a voltage which is above the set-in voltage of the FET.
  • the level of the input voltage V e is increased to the value H.
  • the base electrode of the auxiliary transistor 12 thus receives a positive voltage pulse which opens the auxiliary transistor 12.
  • the positive voltage pulse simultaneously causes the pnp-transistor 11 to be cut off.
  • the auxiliary transistor 11 also remains cut off if it has already been cut off by the decay of a negative capacitive control current.
  • the capacitor 10 is therefore discharged and the FET can cut off.
  • the potential at point 6 then drops so far that the capacitor 14 can be charged up again through the diode 13 by the auxiliary voltage source.
  • FIG. 2 there is shown a double-throw switch, with which the load 3 can be alternatingly switched to a positive voltage +1/2 V B and to a negative voltage -1/2 V B .
  • the switch according to FIG. 1 is supplemented by a second FET 20 of the same channel type.
  • the source terminal of the FET 20 is designated with reference character 21, its drain terminal with reference character 22 and its gate or control terminal with reference character 23.
  • the source terminal 8 of the first FET 2 and the drain terminal 22 of the second FET 20 are tied together.
  • the junction point 6 is further connected to a terminal of the load and to the control circuit 1.
  • the gate terminal 23 of the FET 20 is connected to the first input terminal 4, while the source terminal 21 in practice forms the second terminal 5.
  • the FET 2 is switched-on by letting the input voltage go from the level H to the level L, as described in connection with FIG. 1. Therefore, the FET 20 is cut off and the load is connected to a positive voltage of the magnitude +1/2 V B .
  • the FET 2 is cut off as described in connection with FIG. 1.
  • the gate electrode 23 of the FET 20 now receives a positive voltage relative to the point 6 and the FET 20 is switched on. A negative voltage of magnitude -1/2 V B is then present at the load 3.

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US06/262,648 1980-05-14 1981-05-11 Switch with an MIS-FET operated as a source follower Expired - Fee Related US4430586A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3018501 1980-05-14
DE19803018501 DE3018501A1 (de) 1980-05-14 1980-05-14 Schalter mit einem als source-folger betriebenen mis-pet

Publications (1)

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US4430586A true US4430586A (en) 1984-02-07

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US06/262,648 Expired - Fee Related US4430586A (en) 1980-05-14 1981-05-11 Switch with an MIS-FET operated as a source follower

Country Status (5)

Country Link
US (1) US4430586A (fr)
EP (1) EP0039952B1 (fr)
JP (1) JPS5717228A (fr)
AT (1) ATE6396T1 (fr)
DE (2) DE3018501A1 (fr)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4555644A (en) * 1982-12-17 1985-11-26 Sgs-Ates Componenti Elettronici Spa Output interface for a three-state logic circuit in an integrated circuit using MOS transistors
US4636705A (en) * 1986-01-13 1987-01-13 General Motors Corporation Switching circuit utilizing a field effect transistor
US4639616A (en) * 1982-12-14 1987-01-27 La Telemecanique Electrique Circuit for controlling the base of a power transistor used in high tension switching
US4649321A (en) * 1985-10-28 1987-03-10 General Electric Company Gate capacitance latch for DC to AC converters
US4890020A (en) * 1987-06-08 1989-12-26 U.S. Philips Corporation Circuit for driving a semiconductor device with protection against transients
US5017816A (en) * 1989-11-08 1991-05-21 National Semiconductor Corp. Adaptive gate discharge circuit for power FETS
GB2238437A (en) * 1989-11-22 1991-05-29 Plessey Co Plc Transistor driver circuits
US5396119A (en) * 1992-04-17 1995-03-07 Sgs-Thomson Microelectronics S.R.L. MOS power transistor device with temperature compensation
US5446406A (en) * 1993-02-10 1995-08-29 Siemens Aktiengesellschaft Control circuit for an MOS semiconductor component with a source-side load
DE19732910A1 (de) * 1997-07-30 1999-02-04 Siemens Ag Schaltungsanordnung zur Ansteuerung einer Last
RU2784045C1 (ru) * 2022-07-17 2022-11-23 федеральное государственное бюджетное образовательное учреждение высшего образования "Донской государственный технический университет"(ДГТУ) Истоковый повторитель напряжения с малым уровнем систематической составляющей напряжения смещения нуля

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3209070C2 (de) * 1982-03-12 1994-03-17 Siemens Ag Schaltungsanordnung zum Schalten elektrischer Lasten
US4459539A (en) * 1982-07-12 1984-07-10 Hewlett-Packard Company Charge transfer constant volt-second regulator
FR2556905B1 (fr) * 1983-12-14 1989-07-13 Europ Agence Spatiale Circuit de commande pour transistor a effet de champ de puissance
DE3405936A1 (de) * 1984-02-18 1985-08-22 ANT Nachrichtentechnik GmbH, 7150 Backnang Einrichtung zur ansteuerung eines leistungs-feldeffekt-schalttransistors
GB8423574D0 (en) * 1984-09-18 1984-10-24 Smiths Ind Plc Ac Switch
JPS6188787A (ja) * 1984-10-04 1986-05-07 Omron Tateisi Electronics Co パルス幅変調駆動回路
IT1215309B (it) * 1985-09-10 1990-01-31 Sgs Microelettronica Spa Circuito per il pilotaggio in continua ed in alternata di transistori mos di potenza a canale n di standi push-pull a bassa dissipazione.
DE3685629T2 (de) * 1985-10-23 1993-02-11 Pilkington Micro Electronics Integrierte geschaltete uebertragungsschaltung.
ES2002944A6 (es) * 1987-01-08 1988-10-01 Casanellas Bassols Francesc Circuito electronico convertidor de tension continua en tension alterna
DE3721075C1 (de) * 1987-06-26 1989-01-26 Trilux Lenze Gmbh & Co Kg Gleichspannungsversorgungsschaltung
JPS6474822A (en) * 1987-09-17 1989-03-20 Fujitsu Ltd Driving circuit to switch fet
US4903182A (en) * 1989-03-20 1990-02-20 American Telephone And Telegraph Company, At&T Bell Laboratories Self-oscillating converter with light load stabilizer
JPH0397233U (fr) * 1990-01-25 1991-10-07
DE4014448C2 (de) * 1990-05-05 1994-05-26 Heraeus Sepatech Schaltungsanordnung zur Drehzahlsteuerung eines als Zentrifugenantrieb dienenden Induktionsmotors
ATE162672T1 (de) * 1991-04-04 1998-02-15 Koninkl Philips Electronics Nv Schaltungsanordnung
DE4136514C2 (de) * 1991-11-06 1994-08-18 Heraeus Sepatech Schaltungsanordnung zur Drehzahlsteuerung eines als Zentrifugenantrieb dienenden dreiphasigen Induktionsmotors
EP0555648A3 (en) * 1992-01-16 1994-09-28 Kopp Heinrich Ag Circuit for controlling field-controlled power switches
US5418673A (en) * 1992-12-14 1995-05-23 North American Philips Corporation Control electrode disable circuit for power transistor
JP4229804B2 (ja) 2003-10-24 2009-02-25 Ｎｅｃエレクトロニクス株式会社 半導体出力回路
KR20210064933A (ko) * 2019-11-26 2021-06-03 주식회사 엘지에너지솔루션 Fet 제어 장치 및 방법

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Hebenstreit, "Driving the SIPMOS Field Effect Transistor as a fast Power Switch", Siemens Forsch.-u. Entwickl-Ber, pp. 200-204, 5/80.
Jenkins, "Interface Circuits Drive High Level Switches from Low-Level Inputs", Electronic Engineering, pp. 45-49, May, 1971.
Siliconix, "VMOS Power FETs Design Catalog", pp. 4-6, Jan. 1979.

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639616A (en) * 1982-12-14 1987-01-27 La Telemecanique Electrique Circuit for controlling the base of a power transistor used in high tension switching
US4555644A (en) * 1982-12-17 1985-11-26 Sgs-Ates Componenti Elettronici Spa Output interface for a three-state logic circuit in an integrated circuit using MOS transistors
US4649321A (en) * 1985-10-28 1987-03-10 General Electric Company Gate capacitance latch for DC to AC converters
US4636705A (en) * 1986-01-13 1987-01-13 General Motors Corporation Switching circuit utilizing a field effect transistor
US4890020A (en) * 1987-06-08 1989-12-26 U.S. Philips Corporation Circuit for driving a semiconductor device with protection against transients
US5017816A (en) * 1989-11-08 1991-05-21 National Semiconductor Corp. Adaptive gate discharge circuit for power FETS
GB2238437A (en) * 1989-11-22 1991-05-29 Plessey Co Plc Transistor driver circuits
US5396119A (en) * 1992-04-17 1995-03-07 Sgs-Thomson Microelectronics S.R.L. MOS power transistor device with temperature compensation
US5446406A (en) * 1993-02-10 1995-08-29 Siemens Aktiengesellschaft Control circuit for an MOS semiconductor component with a source-side load
DE19732910A1 (de) * 1997-07-30 1999-02-04 Siemens Ag Schaltungsanordnung zur Ansteuerung einer Last
DE19732910C2 (de) * 1997-07-30 2002-06-20 Infineon Technologies Ag Schaltungsanordnung zur Ansteuerung einer Last
RU2784045C1 (ru) * 2022-07-17 2022-11-23 федеральное государственное бюджетное образовательное учреждение высшего образования "Донской государственный технический университет"(ДГТУ) Истоковый повторитель напряжения с малым уровнем систематической составляющей напряжения смещения нуля

Also Published As

Publication number Publication date
JPS5717228A (en) 1982-01-28
DE3162348D1 (en) 1984-03-29
ATE6396T1 (de) 1984-03-15
EP0039952B1 (fr) 1984-02-22
EP0039952A1 (fr) 1981-11-18
DE3018501A1 (de) 1981-11-19

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