US4418472A - Method of delineating thin film magnetic head arrays - Google Patents

Method of delineating thin film magnetic head arrays Download PDF

Info

Publication number
US4418472A
US4418472A US06/324,195 US32419581A US4418472A US 4418472 A US4418472 A US 4418472A US 32419581 A US32419581 A US 32419581A US 4418472 A US4418472 A US 4418472A
Authority
US
United States
Prior art keywords
magnetic head
thin film
substrate
film magnetic
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US06/324,195
Other languages
English (en)
Inventor
Robert V. Lorenze, Jr.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Priority to US06/324,195 priority Critical patent/US4418472A/en
Assigned to XEROX CORPORATION, A CORP. OF NY reassignment XEROX CORPORATION, A CORP. OF NY ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: LORENZE, ROBERT V. JR.
Priority to JP57201014A priority patent/JPS5894120A/ja
Priority to EP82306238A priority patent/EP0080373B1/en
Priority to DE8282306238T priority patent/DE3270028D1/de
Application granted granted Critical
Publication of US4418472A publication Critical patent/US4418472A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
    • Y10T29/49043—Depositing magnetic layer or coating
    • Y10T29/49044—Plural magnetic deposition layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
    • Y10T29/49043—Depositing magnetic layer or coating
    • Y10T29/49046—Depositing magnetic layer or coating with etching or machining of magnetic material

Definitions

  • This invention broadly relates to methods for delineating individual thin film magnetic head arrays from a substrate and, more particularly, to a high yield, reproducible delineation method which results in precise, well-defined gap regions and which is readily adapted to cost effective batch processing.
  • Thin film magnetic head arrays because they can be fabricated using modified versions of the batch processing technolgies employed by integrated circuit manufacturers offer a number of distinct advantages over conventional (wire-wound, ferrite core) magnetic heads.
  • Such advantages include: (1) cost-effective manufacture of high density multi-element arrays with precise head geometries and dimensional tolerances, since thin film deposition and photolithographic technologies are utilized; (2) potential for improved frequency response (due to material and geometry) and a more precise "track" definition (due to sharper field gradients); (3) potential for better head-to-head uniformity and increased reliability; and (4) potential for totally (or partially) integrated addressing electronics, again resulting in lower costs, high speed, and better reliability.
  • Known methods for fabricating thin film magnetic head arrays typically consist of sequentially depositing thin film layers of magnetic, conductive, and insulative materials.
  • the magnetic thin film layers (usually Permalloy) form the magnetic yoke of the head structure and serve the function of concentrating magnetic flux according to desired geometries.
  • the conductor thin film layer typically gold or copper, form the "turns" or windings around the magnetic yoke of the individual heads which induce a magnetic field when current is passed through them.
  • the delineated layer of conductive thin films also provides electrical interconnection between the coil section of the heads and the power supply/addressing network which is used to activate the array.
  • insulator thin film layers are used to electrically isolate the various thin film conductor layers (especially in multi-turn head designs), as well as to provide precise gap spacing between upper and lower layers of the magnetic yoke.
  • the various thin film layers are typically deposited by a variety of techniques including vacuum deposition (sputtering, evaporation), electroplating, and spin-coating (e.g., for spin-on insulator materials).
  • the resultant multi-layer thin film array structure is fabricated on a rigid substrate (e.g., silicon wafer), and the thin film layers are delineated into patterns (as required) using photolithographic masking and wet chemical or plasma etching techniques.
  • a completed thin film magnetic head array typically consists of anywhere from a few to several hundreds of individual heads (at densities of 50-300 heads per inch), and can vary from a few tenths of an inch to several inches in length. Multiple arrays (or array modules) are processed simultaneously on a given substrate, and many substrates are processed together so that cost advantages of batch fabrication are realized.
  • the vast majority of the known thin film magnetic head structures utilize the so called vertical configuration in which the gap length is perpendicular to the plane of the substrate, as illustrated in FIG. 2.
  • the presence of the substrate in the recording plane makes this structure resistant to wear and scratches. Achieving this wear resistance, however, requires that the arrays of heads be precisely delineated from the substrate in order to complete the array fabrication cycle.
  • this delineation of individual arrays from the silicon wafer substrate is accomplished by a dice and lap procedure.
  • the dicing operation is usually performed with a high speed microelectronic dicing saw using thin diamond impregnated cutting wheels.
  • This lapping/polishing process is particularly undesirable for the following reasons: ( 1) it is not a "batch" process, since arrays typically must be mounted and lapped individually, or at best, a few at a time with elaborate fixturing; (2 ) the process is extremely operator dependent since each array must be manually aligned and mounted to precise tolerances, then sequentially lapped through a series of grit sizes to achieve the desired result. End point of the process and uniformity of the process across long arrays are typically difficult parameters to control. Hence, the procedure is time consuming and may not yield consistent results; (3) the arrays are subject to much handling and potential mechanical abuse during both the dicing and lapping processes, contributing to low device yields.
  • a method for delineating thin film magnetic heads, and in particular, individual array modules of thin film magnetic heads, from silicon wafer substrates To initiate the process, a single crystal silicon substrate having a (110) surface orientation is prepared. Although not essential, it is preferable to thermally grow a thin oxide (silicon dioxide) layer on the surfaces of the wafer to protect it during subsequent processing. With this (110) surface orientation, certain sets of the more etch resistant ⁇ 111 ⁇ planes of the crystal silicon substrate are oriented perpendicular to the wafer surface.
  • the multi-layer thin film magnetic head array structures are then fabricated upon the surface of the substrate or thin oxide layer so that the critical preliminary array edges (and the gap regions of the individual heads) are aligned substantially perpendicular to the (110) oriented surface and substantially coincident with a one of the ⁇ 111 ⁇ planes.
  • a final mask is formed having openings, or slot patterns, which coincide with the array edges to be delineated, i.e each of the thin film magnetic head structures has associated therewith an opening having an edge surface that lies in a ⁇ 111 ⁇ plane; this plane will subsequently include the magnetic head array contact surface and the final, individual, magnetic head gap regions.
  • the wafers are placed in an ion beam milling system and the masked structure is milled at right angles to the surface of the substrate through the thin film layers into the silicon substrate.
  • the milled structures are immersed in a silicon preferential etch solution to anisotropically etch entirely through the wafer, delineating the individual arrays.
  • the resultant arrays exhibit uniform, smooth substrate walls precisely aligned with the thin film magnetic head array gap regions.
  • FIG. 1 illustrates an exemplary single turn, vertically configured thin film magnetic head array
  • FIG. 2 illustrates a cross-section of one of the single turn thin film magnetic heads of FIG. 1;
  • FIG. 3 illustrates stages in a process according to the present invention.
  • FIGS. 1 and 2 A simple single-turn film magnetic head array (vertical configuration) is shown in FIGS. 1 and 2.
  • This illutrative magnetic head array is substantially identical to the array reported by W. Chynoweth et al in "PEDRO-A Transducer-Per-Track Recording System with Batch-Fabricated Magnetic Film Read/Write Transducers," Honeywell Computer Journal 7,103 (1973), which is incorporated by reference herein.
  • the invention will be herein described with reference to this single-turn array, the method of the invention is generally adapted for delineation of all types of multi-layer thin film magnetic head array structures fabricated on silicon wafer substrates and, accordingly, it is not necessarily limited in its application to the particular embodiment shown herein.
  • FIG. 1 is a perspective view of an illustrative single-turn thin film magnetic head array. It will be appreciated that, while only three individual heads are shown in FIG. 1, the typical array modules may include up to several hundred individual heads.
  • each head is a three-layer thin film structure produced by selectively depositing an d patterning a first magnetic (e.g. Permalloy) layer 10, a conductor (e.g., gold) layer 12, and top magnetic (e.g., Permalloy) layer 14.
  • a first magnetic (e.g. Permalloy) layer 10 e.g. Permalloy
  • conductor e.g., gold
  • top magnetic layer 14 e.g., Permalloy
  • Conventional procedures such as vacuum deposition, photolithography, and the like may be used to form the thin film head structure of FIGS. 1 and 2.
  • the two magnetic layers, 10 and 14 are delineated so as to define the magnetic yoke of the head structure which functions to concentrate the magnetic flux in the gap region which is generally designated 16 in FIGS. 1 and 2.
  • the gold conductor layer is delineated to fill the gap g (see FIG. 2) of each individual head and to define conductors which form in conjunction with the gap conductor, the generally U-shaped turn or winding around the magnetic yoke.
  • a magnetic field is induced when current is passed in the direction indicated by arrows, for example, when activated by an addressing or driver network connected (for example by wire bonding) via leads 18.
  • a single crystal silicon wafer substrate 30 having a (110) surface orientation is prepared.
  • the wafer includes oxide layers 32 thermally grown on the upper and lower wafer surface to a thickness of approximately 3,000-10,000 Angstroms to protect the wafer surfaces from subsequent processing during the fabrication of the thin film magnetic head array structures.
  • the so prepared wafer will have a set of planes (certain of the ⁇ 111 ⁇ planes) intersecting the (110) surface at right angles as illustrated by the set of axes (one shown) in FIG. 3.
  • this anisotropic etching (or orientation dependent etching) of single crystal silicon is utilized (after masking and ion beam milling of the thin film layers to expose the head gap regions) to etch vertical walled slots entirely through the wafer substrate 30 to completely delineate the array modules.
  • anisotropic etching is founded upon the characteristic the certain crystallographic planes (faces) etch rapidly when exposed to caustic etch solutions, while others etch negligibly when exposed to the same solution.
  • the ⁇ 111 ⁇ plane in silicon are highly resistant to such etches, while the (100) and (110) surfaces are not.
  • alignment of the straight line patterns of a mask parallel to the ⁇ 111 ⁇ planes which intersect the (110) surface of a wafer such as substrate 30 in FIG. 3 enables high aspect ratio etching of well defined vertical grooves.
  • the multi-layer thin film magnetic head array structures are fabricated according to the procedure discussed above on the (110) oriented surface of the crystal substrate or oxide layer thereof as shown in step 2 of FIG. 3.
  • the preliminary array edges 34 are sustantially aligned to lie in a one of the ⁇ 111 ⁇ planes of the crystal substrate 30 and, hence substantially perpendicular to the (110) oriented surface.
  • the illustrated thin film magnetic head arrays 36 correspond to the single turn head arrays of FIGS. 1 and 2, the delineation procedure of the present invention is not intimately dependent upon the details of the array design.
  • a final mask 38 is applied in preparation for ion beam milling and subsequent anisotropic etch.
  • An individual opening, or slot 37 is associated with each array structure and includes at least one edge surface 37a which coincides with (i.e., coplanar with) the ⁇ 111 ⁇ plane containing the final, critical array edges or magnetic head contact surfaces 34a to be delineated. This alignment is illustrated with a slightly exaggerated scale in step 3 of FIG. 3, in which openings 37 in mask 38 are shown aligned in relation to the head array structures 36.
  • An optionally includable encapsulant 39 is shown in steps 2 and 3 of FIG.
  • Such an encapsulant may be included as a means for protecting portions of the array structures which are not to be etched from the caustic anisotropic etching solutions.
  • the protective encapsulant may comprise material employed for the mask. Since, in preferred form, the mask comprises a photoresist, protection of the thin film magnetic head structues may be easily accomplished when photoprocessing the mask.
  • the encapsulant may be a temporary layer of a material such as polyimide or a metal. While almost any photoresist (spin-on or dry film) may be utilized for the mask, the resist which is selected should exhibit a relatively slow etch rate when exposed to ion beam milling.
  • the wafer or wafers are placed in an ion beam milling system where the slot patterns are milled at an angle perpendicular to the wafer surface (i.e., parallel to the ⁇ 111 ⁇ planes of the silicon substrate) until the thin film layers comprising the thin film magnetic head array structure are completely delineated in the gap region (step 4 of FIG. 3).
  • An ion beam milling system consists basically of a vacuum chamber, an ion beam source (ion gun), a substrate support platen, and a high vacuum pumping station. In operation, a low pressure gas plasma (inert or reactive) is generated in the ion gun region of the vacuum chamber, and a high energy collimated ion beam is extracted out into the higher vacuum region of the chamber.
  • target material i.e., substrates to be milled
  • the material is sputter etched at a rate dependent upon the particular material properties.
  • target material i.e., substrates to be milled
  • the wide range in milling rates permits the use of some materials as effecttive masking layers, so that fine geometry patterns can be easily and precisely delineated.
  • a simple electroformed metal mask may have to be used in conjunction with the photomask to provide adequate array protection, as will be apparent to those skilled in this art.
  • the degree of ion beam milling of the silicon along the array may also vary from design to design.
  • the ion beam milling operation is complete when no thin film residue remains in the photomask slots.
  • reactive ion beam milling may be employed in step 4.
  • the wafers are immersed in a silicon preferential etch solution (e.g., a warm (85°-100° C.) 44-50% KOH and water solution) until the slot patterns are etched entirely through the wafer.
  • a silicon preferential etch solution e.g., a warm (85°-100° C.) 44-50% KOH and water solution
  • this anisotropic etch step produces uniform, smooth vertical walled slots precisely located with respect to both the sustrate and the critical edges of the individual arrays.
  • aspect ratios of up to 600:1 are realizable.
  • undercutting of the mask by the etchant solution will be of submicron dimensions, which is totally acceptable.
  • the thin film magnetic head array/substrate delineation along the critical magnetic gap edge is essentially complete.
  • the present invention provides a method of delineating vertical configuration thin film magnetic head arrays fabricated on silicon wafer substrates by a process which incorporates the sequential use of photolithographic masking, ion beam milling, and anisotropic etching of silicon.
  • the method employs cost effective batch processing techniques and offers the potential of a consistent, precise and high yield delineation technique for thin film magnetic head arrays.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)
US06/324,195 1981-11-23 1981-11-23 Method of delineating thin film magnetic head arrays Expired - Lifetime US4418472A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US06/324,195 US4418472A (en) 1981-11-23 1981-11-23 Method of delineating thin film magnetic head arrays
JP57201014A JPS5894120A (ja) 1981-11-23 1982-11-16 薄膜磁気ヘツド形成方法
EP82306238A EP0080373B1 (en) 1981-11-23 1982-11-23 Method of forming thin film magnetic head arrays
DE8282306238T DE3270028D1 (en) 1981-11-23 1982-11-23 Method of forming thin film magnetic head arrays

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/324,195 US4418472A (en) 1981-11-23 1981-11-23 Method of delineating thin film magnetic head arrays

Publications (1)

Publication Number Publication Date
US4418472A true US4418472A (en) 1983-12-06

Family

ID=23262521

Family Applications (1)

Application Number Title Priority Date Filing Date
US06/324,195 Expired - Lifetime US4418472A (en) 1981-11-23 1981-11-23 Method of delineating thin film magnetic head arrays

Country Status (4)

Country Link
US (1) US4418472A (enrdf_load_stackoverflow)
EP (1) EP0080373B1 (enrdf_load_stackoverflow)
JP (1) JPS5894120A (enrdf_load_stackoverflow)
DE (1) DE3270028D1 (enrdf_load_stackoverflow)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4541026A (en) * 1982-07-20 1985-09-10 Vertimag Systems Corporation Hybrid read-write head for perpendicular recording media
US4639999A (en) * 1984-11-02 1987-02-03 Xerox Corporation High resolution, high efficiency I.R. LED printing array fabrication method
US4668333A (en) * 1985-12-13 1987-05-26 Xerox Corporation Image sensor array for assembly with like arrays to form a longer array
US4759118A (en) * 1986-05-08 1988-07-26 Alps Electric Co., Ltd. Method of manufacturing thin film magnetic head
US4819091A (en) * 1987-04-30 1989-04-04 International Business Machines Corporation High speed magnetic disk contact recording system
US5016342A (en) * 1989-06-30 1991-05-21 Ampex Corporation Method of manufacturing ultra small track width thin film transducers
US5116719A (en) * 1990-02-15 1992-05-26 Seagate Technology, Inc. Top pole profile for pole tip trimming
US5506737A (en) * 1994-07-05 1996-04-09 Industrial Technology Research Institute High-density electronic head
EP0769814A1 (de) * 1995-10-17 1997-04-23 Deutsche ITT Industries GmbH Verfahren zum Trennen von in einem Körper verbundenen Elementen, insbesondere elektronischen Elementen
US5742452A (en) * 1996-01-10 1998-04-21 International Business Machines Corporation Low mass magnetic recording head and suspension
US5757592A (en) * 1991-04-26 1998-05-26 International Business Machines Corporation Laminated coil for a magnetic head of a disk drive and method for manufacturing the same
US5778514A (en) * 1993-01-06 1998-07-14 Das Devices, Inc. Method for forming a transducing head
US5870123A (en) * 1996-07-15 1999-02-09 Xerox Corporation Ink jet printhead with channels formed in silicon with a (110) surface orientation
WO1999046135A1 (en) * 1998-03-12 1999-09-16 Storage Technology Corporation Method for creating microstructures
FR2781917A1 (fr) * 1998-07-28 2000-02-04 Commissariat Energie Atomique Procede de realisation collective de tetes magnetiques integrees a surface portante de hauteur determinee
FR2781916A1 (fr) * 1998-07-28 2000-02-04 Commissariat Energie Atomique Procede de realisation collective de tetes magnetiques integrees a surface portante obtenue par photolithographie
US6088471A (en) * 1997-05-16 2000-07-11 Authentec, Inc. Fingerprint sensor including an anisotropic dielectric coating and associated methods
US6166879A (en) * 1996-10-31 2000-12-26 Aiwa Co., Ltd. Thin film magnetic head with contoured surface
US6381833B1 (en) * 1998-03-20 2002-05-07 Seagate Technology Llc Method for making narrow top poles for inductive magnetic heads
WO2002007154A3 (en) * 2000-07-13 2002-08-29 Seagate Technology Llc Process and apparatus for finishing a magnetic slider
US6600631B1 (en) 1989-11-27 2003-07-29 Censtor Corp. Transducer/flexure/conductor structure for electromagnetic read/write system
US20040174633A1 (en) * 2001-04-20 2004-09-09 Dinan Thomas Edward Magnetic head for hard disk drive having varied composition nickel-iron alloy magnetic poles
US20060187585A1 (en) * 2005-02-22 2006-08-24 Hitachi Global Storage Technologies Silicon slider for magnetic recording fabricated by an alkaline etch

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0137051B1 (de) * 1983-08-17 1988-03-16 Ibm Deutschland Gmbh Verfahren zum Herstellen von Magnetkopf-Flugkörpern
FR2559296B1 (fr) * 1984-02-03 1988-12-30 Commissariat Energie Atomique Nouveau patin du type catamaran pour tetes magnetiques d'enregistrement et son procede de fabrication

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3344237A (en) * 1967-09-26 Desposited film transducing apparatus and method op producing the apparatus
US3787964A (en) * 1971-12-23 1974-01-29 Ibm Method for manufacturing a magnetic head
US4049944A (en) * 1973-02-28 1977-09-20 Hughes Aircraft Company Process for fabricating small geometry semiconductive devices including integrated components
US4085022A (en) * 1976-01-31 1978-04-18 Leybold-Heraeus Gmbh & Co. Kommandit-Gesellschaft Method and apparatus for controlling the removal, by means of ion etching, of a thin layer from a substrate
US4147564A (en) * 1977-11-18 1979-04-03 Sri International Method of controlled surface texturization of crystalline semiconductor material

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4151574A (en) * 1974-05-24 1979-04-24 U.S. Philips Corporation Magnetic head using a magnetic field-sensitive element and method of manufacturing same
DE2721201A1 (de) * 1977-05-11 1978-11-16 Siemens Ag Verfahren zur herstellung integrierter magnetkopfstrukturen
GB2003647B (en) * 1977-09-02 1982-05-06 Magnex Corp Thin film magnetic recording heads
EP0032230A3 (en) * 1980-01-14 1982-01-13 Siemens Aktiengesellschaft Integrated magnetic transducer and method of manufacturing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3344237A (en) * 1967-09-26 Desposited film transducing apparatus and method op producing the apparatus
US3787964A (en) * 1971-12-23 1974-01-29 Ibm Method for manufacturing a magnetic head
US4049944A (en) * 1973-02-28 1977-09-20 Hughes Aircraft Company Process for fabricating small geometry semiconductive devices including integrated components
US4085022A (en) * 1976-01-31 1978-04-18 Leybold-Heraeus Gmbh & Co. Kommandit-Gesellschaft Method and apparatus for controlling the removal, by means of ion etching, of a thin layer from a substrate
US4147564A (en) * 1977-11-18 1979-04-03 Sri International Method of controlled surface texturization of crystalline semiconductor material

Non-Patent Citations (9)

* Cited by examiner, † Cited by third party
Title
Bean et al, "Appln. of Silicon Crystal Orientation & Anisotropic Effects to the Control of Charge Spreading in Devices," IEEE J. Sol. Stat. Circ. SC-9 , No. 3,111 (Jun. 1974).
Bollinger, "Ion Milling for Semiconductor Production Processes," Solid State Technology, 66 (Nov. 1977).
Chynoweth, "Pedro-A Transducer-Per-Track Recording System with Batch-Fabricated Mag. Film Read/Write Transducers," Honeywell Computer Journal 7,103 (1973).
Kendall, "On Etching Very Narrow Grooves in Silicon," Appl. Phys. Lett., 26, No. 4, 195 (Feb. 15, 1975).
Lazzari, "Integrated Magnetic Recording Heads: Review and Outlook," Am. Institute of Physics Conf. Proceedings 18,990 (1973).
Lee, "Microfabrication by Ion-Beam Etching," J. Vac. Sci. Technol., 16 (2), 164 (Mar./Apr. 1979).
Petersen, "Thin Film Magnetic Heads," IBM Tech. Disclosure Bulletin, 21, No. 12,5002 (May, 1979).
Romankiw et al, "Batch Fabrication of Thin Film Mag. Recording Heads: A Lit. Review & Process Description for Vertical Single Turn Heads," IEEE Trans. Mag. MAG-11,50 (1975).
Stoller, "The Etching of Deep Vertical-Walled Patterns in Silicon," RCA Review, 31,271 (Jun. 1970).

Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4541026A (en) * 1982-07-20 1985-09-10 Vertimag Systems Corporation Hybrid read-write head for perpendicular recording media
US4639999A (en) * 1984-11-02 1987-02-03 Xerox Corporation High resolution, high efficiency I.R. LED printing array fabrication method
US4668333A (en) * 1985-12-13 1987-05-26 Xerox Corporation Image sensor array for assembly with like arrays to form a longer array
US4759118A (en) * 1986-05-08 1988-07-26 Alps Electric Co., Ltd. Method of manufacturing thin film magnetic head
US4819091A (en) * 1987-04-30 1989-04-04 International Business Machines Corporation High speed magnetic disk contact recording system
US5016342A (en) * 1989-06-30 1991-05-21 Ampex Corporation Method of manufacturing ultra small track width thin film transducers
US6600631B1 (en) 1989-11-27 2003-07-29 Censtor Corp. Transducer/flexure/conductor structure for electromagnetic read/write system
US20040120078A1 (en) * 1989-11-27 2004-06-24 Berding Keith R. Transducer/flexure/conductor structure for electromagnetic read/write system
US5116719A (en) * 1990-02-15 1992-05-26 Seagate Technology, Inc. Top pole profile for pole tip trimming
US5757592A (en) * 1991-04-26 1998-05-26 International Business Machines Corporation Laminated coil for a magnetic head of a disk drive and method for manufacturing the same
US5778514A (en) * 1993-01-06 1998-07-14 Das Devices, Inc. Method for forming a transducing head
US5506737A (en) * 1994-07-05 1996-04-09 Industrial Technology Research Institute High-density electronic head
EP0769814A1 (de) * 1995-10-17 1997-04-23 Deutsche ITT Industries GmbH Verfahren zum Trennen von in einem Körper verbundenen Elementen, insbesondere elektronischen Elementen
US5824595A (en) * 1995-10-17 1998-10-20 Deutsche Itt Industries Gmbh Method of separating electronic elements
US5742452A (en) * 1996-01-10 1998-04-21 International Business Machines Corporation Low mass magnetic recording head and suspension
US5920762A (en) * 1996-01-10 1999-07-06 International Business Machines Corporation Method of making low mass magnetic recording head and suspension
US5870123A (en) * 1996-07-15 1999-02-09 Xerox Corporation Ink jet printhead with channels formed in silicon with a (110) surface orientation
US6166879A (en) * 1996-10-31 2000-12-26 Aiwa Co., Ltd. Thin film magnetic head with contoured surface
US6088471A (en) * 1997-05-16 2000-07-11 Authentec, Inc. Fingerprint sensor including an anisotropic dielectric coating and associated methods
US6024884A (en) * 1998-03-12 2000-02-15 Storage Technology Corporation Method for creating microstructures
WO1999046135A1 (en) * 1998-03-12 1999-09-16 Storage Technology Corporation Method for creating microstructures
US6381833B1 (en) * 1998-03-20 2002-05-07 Seagate Technology Llc Method for making narrow top poles for inductive magnetic heads
FR2781916A1 (fr) * 1998-07-28 2000-02-04 Commissariat Energie Atomique Procede de realisation collective de tetes magnetiques integrees a surface portante obtenue par photolithographie
WO2000007179A1 (fr) * 1998-07-28 2000-02-10 Commissariat A L'energie Atomique Procede de realisation collective de tetes magnetiques integrees a surface portante de hauteur determinee
WO2000007180A1 (fr) * 1998-07-28 2000-02-10 Commissariat A L'energie Atomique Procede de realisation collective de tetes magnetiques integrees a surface portante arrondie
FR2781917A1 (fr) * 1998-07-28 2000-02-04 Commissariat Energie Atomique Procede de realisation collective de tetes magnetiques integrees a surface portante de hauteur determinee
US6555294B1 (en) * 1998-07-28 2003-04-29 Commissariat A L'energie Atomique Method for collective production of magnetic heads with rounded bearing surface
US20030148715A1 (en) * 2000-07-13 2003-08-07 Zine-Eddine Boutaghou Apparatus for finishing a magnetic slider
GB2380049A (en) * 2000-07-13 2003-03-26 Seagate Technology Llc Process and apparatus for finishing a magnetic slider
GB2380049B (en) * 2000-07-13 2004-01-07 Seagate Technology Llc Process and apparatus for finishing a magnetic slider
WO2002007154A3 (en) * 2000-07-13 2002-08-29 Seagate Technology Llc Process and apparatus for finishing a magnetic slider
US6843705B2 (en) 2000-07-13 2005-01-18 Seagate Technology Llc Apparatus for finishing a magnetic slider
US20040174633A1 (en) * 2001-04-20 2004-09-09 Dinan Thomas Edward Magnetic head for hard disk drive having varied composition nickel-iron alloy magnetic poles
US6912771B2 (en) * 2001-04-20 2005-07-05 International Business Machines Corporation Magnetic head for hard disk drive having varied composition nickel-iron alloy magnetic poles
US20060187585A1 (en) * 2005-02-22 2006-08-24 Hitachi Global Storage Technologies Silicon slider for magnetic recording fabricated by an alkaline etch
US7607214B2 (en) * 2005-02-22 2009-10-27 Hitachi Global Storage Technologies Netherlands B.V. Method of manufacturing a silicon slider by an alkaline etch

Also Published As

Publication number Publication date
DE3270028D1 (en) 1986-04-24
JPH0247005B2 (enrdf_load_stackoverflow) 1990-10-18
JPS5894120A (ja) 1983-06-04
EP0080373A1 (en) 1983-06-01
EP0080373B1 (en) 1986-03-19

Similar Documents

Publication Publication Date Title
US4418472A (en) Method of delineating thin film magnetic head arrays
US5820770A (en) Thin film magnetic head including vias formed in alumina layer and process for making the same
US6018862A (en) Thin-film magnetic recording head using a plated metal gap layer
US5659451A (en) Studless thin film magnetic head and process for making the same
US5016342A (en) Method of manufacturing ultra small track width thin film transducers
EP0727771B1 (en) Thin film magnetic coil core
US4321641A (en) Thin film magnetic recording heads
JPH02289913A (ja) 薄膜磁気ヘッドの製造方法
US4841624A (en) Method of producing a thin film magnetic head
EP0006269A1 (en) Elements for magnetic heads, magnetic heads manufactured with these elements, methods for producing both
US7086138B2 (en) Method of forming a feature having a high aspect ratio
JPH0646447B2 (ja) 薄膜磁気ヘツドの製造方法
JPH0575237A (ja) 導体パターン形成方法
JP2740698B2 (ja) 薄膜磁気ヘッド
JPS60177418A (ja) 垂直磁気記録再生用薄膜ヘツド及びその製造方法
JPH05182135A (ja) 薄膜磁気ヘッド及びその製造方法
JPH05303719A (ja) 薄膜磁気ヘッドおよびその製造方法
JPH06338030A (ja) 水平型薄膜磁気ヘッドの製造方法
JPH05159221A (ja) 薄膜ヘッドおよびその製造方法
JPH0810482B2 (ja) 薄膜磁気ヘッドの製造方法
JPS60121508A (ja) 磁気ヘッド装置およびその製造方法
JPH07110917A (ja) 薄膜磁気ヘッド及びその製造方法
JP2552189B2 (ja) 薄膜磁気ヘッドの製造方法
JPS6320710A (ja) 薄膜磁気ヘツドの製造方法
JPH0782614B2 (ja) 薄膜磁気ヘツドの製造方法

Legal Events

Date Code Title Description
AS Assignment

Owner name: XEROX CORPORATION, STAMFORD, CT A CORP. OF NY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:LORENZE, ROBERT V. JR.;REEL/FRAME:003955/0112

Effective date: 19811119

Owner name: XEROX CORPORATION, A CORP. OF NY, CONNECTICUT

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LORENZE, ROBERT V. JR.;REEL/FRAME:003955/0112

Effective date: 19811119

STCF Information on status: patent grant

Free format text: PATENTED CASE

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, PL 96-517 (ORIGINAL EVENT CODE: M170); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 4

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, PL 96-517 (ORIGINAL EVENT CODE: M171); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 8

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 12TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M185); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 12