US4000458A - Method for the noncontacting measurement of the electrical conductivity of a lamella - Google Patents

Method for the noncontacting measurement of the electrical conductivity of a lamella Download PDF

Info

Publication number
US4000458A
US4000458A US05/606,365 US60636575A US4000458A US 4000458 A US4000458 A US 4000458A US 60636575 A US60636575 A US 60636575A US 4000458 A US4000458 A US 4000458A
Authority
US
United States
Prior art keywords
lamella
measurement
conductivity
approximately
inductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US05/606,365
Other languages
English (en)
Inventor
Gabriel Lorimer Miller
David Arthur Hall Robinson
John Duncan Wiley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Bell Telephone Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bell Telephone Laboratories Inc filed Critical Bell Telephone Laboratories Inc
Priority to US05/606,365 priority Critical patent/US4000458A/en
Priority to CA256,881A priority patent/CA1057823A/en
Priority to SE7608925A priority patent/SE410901B/xx
Priority to FR7624912A priority patent/FR2321702A1/fr
Priority to BE169834A priority patent/BE845220A/xx
Priority to NL7609128.A priority patent/NL168051B/xx
Priority to DE2636999A priority patent/DE2636999C3/de
Priority to JP9826976A priority patent/JPS5319874A/ja
Priority to GB34741/76A priority patent/GB1552948A/en
Priority to ES450860A priority patent/ES450860A1/es
Priority to IT69068/76A priority patent/IT1071415B/it
Application granted granted Critical
Publication of US4000458A publication Critical patent/US4000458A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/023—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance where the material is placed in the field of a coil
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables

Definitions

  • the invention is in the field of electronic solid state device processing, more particularly, semiconductor wafer or metal thin film conductivity measurement.
  • the ability to rapidly and accurately measure the electric conductivity of thin flat samples is of critical importance in many aspects of solid state device processing. Such measurements are essential parts of the classification of semiconductor substrate materials prior to processing, to the monitoring of dopant diffusions and the monitoring of metal thin film depositions.
  • the most widely used measurement technique is the four point probe method. However this method has several limitations, for example, it is difficult to interpret the results of such a measurement made on high resistivity semiconductor samples.
  • the probe causes localized surface damage at the point of contact. Such surface damage becomes more and more detrimental as the element size of microminiature circuits becomes smaller.
  • Noncontacting techniques for the measurement of electrical conductivity have been developed in an effort to avoid the limitations of the four point probe technique. These methods generally involve the interaction of the sample being measured with high frequency excitations. Exemplary techniques of this class include: microwave transmission measurements through a semiconductor slab placed in a waveguide (H. Jacobs et al. Proceedings of the IRE, 49 (1961) 928); reflection of an RF signal from a coaxial line terminated by the sample (C. A. Bryant et al. Reviews of Scientific Instruments, 26 (1965)1614); and capacitive coupling and inductive coupling to a resonant circuit (N. Nuyamoto et al. Reviews of Scientific Instruments, 38 (1967) 360; J. C. Brice et al.
  • Such methods typically produce nonlinear output signals which require calibration over the range of use and comparison of the measurement signals to the calibration curve.
  • measurements have typically made use of some relatively ill defined measurement volume (e.g., approximately hemispherical), which may be quite satisfactory for the measurement of uniformly conductive samples, however, increase the complexity of analysis of measurement results for nonuniform samples (e.g., diffused layers in semiconductors).
  • a noncontacting technique has been developed for the measurement of the electrical conductivity of thin flat samples (lamellae) such as semiconductor wafers or metal thin films.
  • This technique produces a highly linear output signal and measures the conducting carriers uniformly through the thickness of the material.
  • This high degree of linearity together with the ability to control the level of the output signal can be used to produce the direct reading of conductivity on, for example, a digital voltmeter.
  • This capability makes the inventive technique particularly attractive for production line monitoring of diffusions and depositions in substrates in electronic device processing.
  • the sample is introduced into the magnetic field of the inductive element of a resonant circuit and the drive current of the resonator is adjusted to restore the amplitude of oscillation to the value it had prior to introduction of the sample.
  • the frequency of oscillation is selected to make skin effect negligible and if the resonator is the frequency determining element of the oscillation circuit, then the incremental current is linearly related to the sheet conductivity of the sample.
  • feedback is used to automatically restore the oscillation amplitude. This exemplary apparatus was linear within approximately 1% over a 100 to 1 range of conductivity with a resolution of approximately one part in 10 4 .
  • the limiting sensitivity of the instrument was ⁇ 10 11 carriers per square centimeter.
  • FIG. 1 is a schematic representation of the basic elements of a device for the practice of the claimed method
  • FIG. 2 is a circuit diagram of an exemplary network developed for the practice of the claimed process
  • FIG. 3 is an elevational view in section of an exemplary inductor with sample
  • FIG. 4 is an exploded perspective view of the mechanical parts of an exemplary apparatus developed for the practice of a claimed process.
  • FIG. 5 is a curve of sheet conductivity (ordinate) vs output signal (abscissa) illustrating the linearity of the inventive method.
  • the measurement of the electrical conductivity (or resistivity) of broad thin solid bodies is of major importance in many facets of solid state device processing. For example it is usually necessary to classify semiconductor substrates prior to processing to make sure that the conductivity of the substrates is either less than a specified low value or within some narrow conductivity range. During processing it is usually necessary to monitor diffusion steps to determine when the conductivity of the diffused wafers has increased or decreased to some conductivity with a narrow range, which is related to the desired dopant concentration and diffusion depth. Many diffusions are caused to take place through apertured masking layers. In such cases a blank wafer can be included for monitoring purposes. Most solid state device processes includes the deposition of metal layers for the production of electrical contact between devices in an integrated circuit or between the circuit and external circuitry.
  • the layer must be thicker than some minimum thickness, in order to provide sufficient conductivity, but not unnecessarily thick, so as to be wasteful of precious metals such as gold and platinum.
  • the monitoring of metal layer thickness becomes an important manufacturing process step.
  • the most widely used method for making the required conductivity measurements is the four point probe technique.
  • these methods are exceedingly difficult because the contacts between the wafer being measured and the contacting elements of the four point probe tend to be rectifying.
  • some diffusions take place through glassy layers making it difficult to contact the underlying semiconductor.
  • the four point probe since it directly contacts the material, produces localized damage. The damaged area can be made unsuitable for use, particularly for devices with small element size. The above considerations make the development of a noncontacting method particularly desirable.
  • the herein disclosed noncontacting method for the electrical conductivity measurement of conducting lamellae produces a highly linear output. This makes possible, for example, single point calibration and, with the availability of signal level adjustment, the direct reading of conductivity on a digital voltmeter.
  • the measurement method can be understood with reference to FIG. 1 which shows a conductive lamella 11 magnetically coupled by means of a ferrite core 12 to an L-C resonant tank circuit 13. This parallel resonant circuit 13 is driven by an RF current generator 14. Operation of the measurement method depends upon the fact that eddy current absorption in the conducting lamella 11 produces an increase in the loss of the resonant circuit 13.
  • the resonant circuit 13 determines the frequency of oscillation so that the frequency shifts with the loading of the circuit 13 and the frequency of oscillation is selected such that skin effect in the lamella is negligible and the current generator 14 is adjusted to restore the amplitude of oscillation after sample insertion, then the incremental current flowing from the current generator 14 into the resonant circuit 13 is linearly related to the product of the bulk conductivity of the conducting material multiplied by the thickness of the material.
  • This product is sometimes referred to as the sheet conductivity of the sample and is related to the product of the number of carriers in the measured volume and the carrier mobility.
  • the product of conductivity times thickness generalizes to the integral of the conductivity through the thickness so that data for nonuniform samples can be easily analyzed.
  • the basic relationship which governs the measurement process is
  • FIG. 2 shows the circuit diagram of an exemplary circuit developed and constructed for the practice of the inventive method. Unless otherwise specified the resistors and 1/4 watt and ⁇ 5%.
  • the diodes are 1N4154, the NPN transistors are 2N3904, the PNP transistors are 2N3906, the FET's are 2N4393 and the differential amplifiers are high gain ( ⁇ 10 5 at DC, unity at 1 MHz) units suitable for use as operational amplifiers (Type 741).
  • Box I outlined by dashed line 21 includes the resonant tank circuit 22 and the several transistors which form the RF current generator. These elements are arranged to form an amplitude controllable marginal oscillator whose frequency of oscillation is determined by the tank circuit 22.
  • the sample to be measured is magnetically coupled to the inductor 23.
  • a description of the operation of this type of oscillator can be found in Journal of Scientific Instruments, 36 (1959) 481.
  • a feature of the oscillator design of FIG. 2 is that the average DC current flowing to ground on the grounded side of the tank circuit 22 is an accurate measure of the magnitude of the oscillation frequency drive current.
  • the magnitude of the oscillation of the tank circuit 22 is automatically adjusted by feedback through the stabilization circuitry of Box II outlined by dashed line 24.
  • the level of oscillation at the collector of transistor 37 is sensed by the temperature compensated peak rectifier formed by transistors 38 and 39, resulting in a corresponding negative voltage at the emitter of 39.
  • the error amplifier 402 then senses the difference between the resulting current flowing in resistor 40 and the reference current flowing in resistor 401.
  • the stabilization reference is an 8 volt zener diode 26.
  • the tank circuit oscillation amplitude is thereby sensed through lead 27 and the feedback control is supplied by lead 28.
  • the average DC tank circuit current is measured at lead 29 by the action of amplifier 30.
  • the output circuitry includes a gain control pot 31, a range switch 32 and an overrange indicator lamp 33, which lights to indicate the presence of a sample whose conductivity is above the two decade range of the instrument.
  • Amplifier 34 and a precision ten turn potentiometer 35 are arranged so as to accomplish the division of the thickness of the material prior to extraction of the conductivity signal in the output port 36. The gain is adjusted so that potentiometer 35 reads directly in convenient units of sample thickness.
  • the components labeled with an asterisk have values that are selected depending upon the particular choice of input tank circuit, L 1 C 1 . The values indicated are those for an instrument reading out at one volt per mho-cm.sup.
  • the design of the inductor is illustrated in FIG. 3.
  • the inductor core design was chosen to be a split high Q ferrite cup core 41 with two turns in each half, resulting in a total inductance of approximately 1 ⁇ h.
  • the cores employed are characterized by a permeability of ⁇ 100 and a Q of ⁇ 100 at the 10MHz oscillation frequency.
  • the number of turns 42 can be changed to 20 or 200 etc. to achieve corresponding 10 2 and 10 4 range scaling as indicated by the 1/n 2 dependence of Equation 1. If C 1 remains unchanged the attendant reduction of oscillation frequency helps to satisfy the skin effect criterion for the measurement of higher conductivity samples 43.
  • the inductor design also includes seamless aluminum cups 44 which reduce the fringing field and maintain the measurement area precisely and exclusively as the region between the opposing faces of the two core halves. Capacitive coupling to the sample 43 is minimized by the inclusion of an electrostatic shield 45 over the faces of the cores 41.
  • the shield used was an electrically conductive paper (available from Western Union Corp. as TELEDELTOS paper).
  • the mechanical design of the sample measuring head of the constructed instrument is illustrated in exploded view, in FIG. 4.
  • the cup cores 41, the windings 42 and aluminum cups 44 are mounted in polymethylmethacrylate holders 46.
  • the holders 46 are bolted onto the base such that shims 47 can be inserted to adjust the gap between the cores to accommodate various sample 43 thicknesses.
  • the leads 48 from the inductor are shielded and lead downward into case 49 containing the electronic circuitry and connected to the tank circuit capacitor 50.
  • Similar instruments for the measurement of higher conductivity semiconductor wafers i.e., in the 5 mho-cm.sup. -1 to 10 3 mho-cm.sup. -1 range
  • the operating frequency of such instruments is approximately 10 6 Hz.
  • cup cores with 10 3 turns on each side, together with a 0.01 ⁇ f capacitor produces an instrument oscillating at approximately 10 4 Hz.
  • Resistor 25 should be selected to give an overall zero reading near the center of the zeroing potentiometer 403.
  • the limiting performance of the instrument was set by slow long term drifts of the order of a few millivolts per hour corresponding to a few parts in 10 4 of the system full scale output of approximately 10 volts. The readings were stable and reproducible to this accuracy. Subsequent analysis of the circuit indicated that it may be possible to reduce these drifts by operating at higher oscillator drive levels and eliminating the amplification at the output of the tank circuit 22 (amplifier 30).

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Health & Medical Sciences (AREA)
  • Electrochemistry (AREA)
  • Pathology (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
US05/606,365 1975-08-21 1975-08-21 Method for the noncontacting measurement of the electrical conductivity of a lamella Expired - Lifetime US4000458A (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
US05/606,365 US4000458A (en) 1975-08-21 1975-08-21 Method for the noncontacting measurement of the electrical conductivity of a lamella
CA256,881A CA1057823A (en) 1975-08-21 1976-07-13 Method for the noncontacting measurement of the electrical conductivity of a lamella
SE7608925A SE410901B (sv) 1975-08-21 1976-08-10 Forfarande for icke-kontaktande metning av den elektriska konduktiviteten hos en bricka
BE169834A BE845220A (fr) 1975-08-21 1976-08-16 Procede de mesure de la conductivite d'une lamelle sans contact avec celle-ci
FR7624912A FR2321702A1 (fr) 1975-08-21 1976-08-16 Procede de mesure de la conductivite d'une lamelle sans contact avec celle-ci
DE2636999A DE2636999C3 (de) 1975-08-21 1976-08-17 Verfahren zum berührungslosen Messen der spezifischen elektrischen Leitfähigkeit eines Plättchens
NL7609128.A NL168051B (nl) 1975-08-21 1976-08-17 Werkwijze voor het niet-contacterend meten van de elek- trische geleidbaarheid van een lamelvormig voorwerp, onder toepassing van het wervelstroomverliesbeginsel.
JP9826976A JPS5319874A (en) 1975-08-21 1976-08-19 Method of measuring electric conductivity of sheet without touching
GB34741/76A GB1552948A (en) 1975-08-21 1976-08-20 Measuring the electrical conductivity of a lamella
ES450860A ES450860A1 (es) 1975-08-21 1976-08-20 Procedimiento para la medicion sin contacto de la conducti- vidad electrica de una laminilla.
IT69068/76A IT1071415B (it) 1975-08-21 1976-08-20 Procedimento per la fabbricazione di oggetti lamellari..particolarmente sottostrati semiconduttori o lamelle metalliche

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/606,365 US4000458A (en) 1975-08-21 1975-08-21 Method for the noncontacting measurement of the electrical conductivity of a lamella

Publications (1)

Publication Number Publication Date
US4000458A true US4000458A (en) 1976-12-28

Family

ID=24427675

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/606,365 Expired - Lifetime US4000458A (en) 1975-08-21 1975-08-21 Method for the noncontacting measurement of the electrical conductivity of a lamella

Country Status (11)

Country Link
US (1) US4000458A (enExample)
JP (1) JPS5319874A (enExample)
BE (1) BE845220A (enExample)
CA (1) CA1057823A (enExample)
DE (1) DE2636999C3 (enExample)
ES (1) ES450860A1 (enExample)
FR (1) FR2321702A1 (enExample)
GB (1) GB1552948A (enExample)
IT (1) IT1071415B (enExample)
NL (1) NL168051B (enExample)
SE (1) SE410901B (enExample)

Cited By (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4075557A (en) * 1975-10-01 1978-02-21 Ckd Praha, Oborovy Podnik Contactless facilities for determining the specific resistance of a test sample
US4142145A (en) * 1977-12-22 1979-02-27 The United States Of America As Represented By The Secretary Of The Navy Method for determining conduction-band edge and electron affinity in semiconductors
US4144488A (en) * 1977-12-22 1979-03-13 The United States Of America As Represented By The Secretary Of The Navy Investigation of near-surface electronic properties in semiconductors by electron beam scanning
US4286215A (en) * 1979-05-18 1981-08-25 Bell Telephone Laboratories, Incorporated Method and apparatus for the contactless monitoring carrier lifetime in semiconductor materials
US4353029A (en) * 1978-02-13 1982-10-05 Ade Corporation Self inverting gauging system
US4428782A (en) 1982-07-23 1984-01-31 The Electricity Council Production of aluminium alloy strip
US4591707A (en) * 1978-10-18 1986-05-27 Gao Gessellschaft Fur Automation Und Organisation Mbh Printed security with hallmarks
US4779739A (en) * 1981-12-04 1988-10-25 Gte Products Corporation Method and apparatus for conductive film detection
US4797614A (en) * 1984-11-02 1989-01-10 Sierracin Corporation Apparatus and method for measuring conductance including a temperature controlled resonant tank circuit with shielding
US4842147A (en) * 1981-12-04 1989-06-27 Gte Products Corporation Method and apparatus for conductive film detection
DE3815010A1 (de) * 1988-04-30 1989-11-09 Leybold Ag Schaltungsanordnung fuer den kombinierten einsatz einer induktiven und einer kapazitiven einrichtung fuer die zerstoerungsfreie messung des ohmschen wiederstands duenner schichten
EP0337253A3 (en) * 1988-04-13 1990-12-19 Department Of Energy Government Of The United States Apparatus and method for characterizing conductivity of materials
US5394084A (en) * 1991-12-23 1995-02-28 The Boeing Company Method and apparatus for reducing errors in eddy-current conductivity measurements due to lift-off by interpolating between a plurality of reference conductivity measurements
US5434505A (en) * 1993-07-30 1995-07-18 Litton Systems, Inc. Method and apparatus for low temperature HEMT-like material testing
US5466614A (en) * 1993-09-20 1995-11-14 At&T Global Information Solutions Company Structure and method for remotely measuring process data
US5528142A (en) * 1995-06-19 1996-06-18 Feickert; Carl A. Resonant eddy analysis- a contactless, inductive method for deriving quantitative information about the conductivity and permeability of a test sample
US5552704A (en) * 1993-06-25 1996-09-03 Tencor Instruments Eddy current test method and apparatus for measuring conductance by determining intersection of lift-off and selected curves
US6448795B1 (en) * 1999-02-12 2002-09-10 Alexei Ermakov Three coil apparatus for inductive measurements of conductance
US6476604B1 (en) * 1999-04-12 2002-11-05 Chartered Semiconductor Manufacturing Ltd. Method and apparatus for identifying high metal content on a semiconductor surface
US6640151B1 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Multi-tool control system, method and medium
US6708074B1 (en) 2000-08-11 2004-03-16 Applied Materials, Inc. Generic interface builder
US20040080326A1 (en) * 2002-07-15 2004-04-29 Klaus Topp Device and method for determining the sheet resistance of samples
US20050024047A1 (en) * 2003-07-31 2005-02-03 Applied Materials, Inc. Eddy current system for in-situ profile measurement
US20050068026A1 (en) * 2003-09-30 2005-03-31 Andrew May Methods and apparatus for inspection utilizing pulsed eddy current
US6910947B2 (en) 2001-06-19 2005-06-28 Applied Materials, Inc. Control of chemical mechanical polishing pad conditioner directional velocity to improve pad life
US6913938B2 (en) 2001-06-19 2005-07-05 Applied Materials, Inc. Feedback control of plasma-enhanced chemical vapor deposition processes
US6961626B1 (en) 2004-05-28 2005-11-01 Applied Materials, Inc Dynamic offset and feedback threshold
US6984198B2 (en) 2001-08-14 2006-01-10 Applied Materials, Inc. Experiment management system, method and medium
US6999836B2 (en) 2002-08-01 2006-02-14 Applied Materials, Inc. Method, system, and medium for handling misrepresentative metrology data within an advanced process control system
US7047099B2 (en) 2001-06-19 2006-05-16 Applied Materials Inc. Integrating tool, module, and fab level control
US7069101B1 (en) 1999-07-29 2006-06-27 Applied Materials, Inc. Computer integrated manufacturing techniques
US7096085B2 (en) 2004-05-28 2006-08-22 Applied Materials Process control by distinguishing a white noise component of a process variance
US7101799B2 (en) 2001-06-19 2006-09-05 Applied Materials, Inc. Feedforward and feedback control for conditioning of chemical mechanical polishing pad
US7160739B2 (en) 2001-06-19 2007-01-09 Applied Materials, Inc. Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles
US7188142B2 (en) 2000-11-30 2007-03-06 Applied Materials, Inc. Dynamic subject information generation in message services of distributed object systems in a semiconductor assembly line facility
US7201936B2 (en) 2001-06-19 2007-04-10 Applied Materials, Inc. Method of feedback control of sub-atmospheric chemical vapor deposition processes
US7205228B2 (en) 2003-06-03 2007-04-17 Applied Materials, Inc. Selective metal encapsulation schemes
US7225047B2 (en) 2002-03-19 2007-05-29 Applied Materials, Inc. Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements
US7272459B2 (en) 2002-11-15 2007-09-18 Applied Materials, Inc. Method, system and medium for controlling manufacture process having multivariate input parameters
US7333871B2 (en) 2003-01-21 2008-02-19 Applied Materials, Inc. Automated design and execution of experiments with integrated model creation for semiconductor manufacturing tools
US7337019B2 (en) 2001-07-16 2008-02-26 Applied Materials, Inc. Integration of fault detection with run-to-run control
US7354332B2 (en) 2003-08-04 2008-04-08 Applied Materials, Inc. Technique for process-qualifying a semiconductor manufacturing tool using metrology data
US7356377B2 (en) 2004-01-29 2008-04-08 Applied Materials, Inc. System, method, and medium for monitoring performance of an advanced process control system
WO2008065112A1 (de) * 2006-11-27 2008-06-05 Endress+Hauser Conducta Gesellschaft Für Mess- Und Regeltechnik Mbh+Co. Kg Induktiver leitfähigkeitssensor
US20100060307A1 (en) * 2008-09-08 2010-03-11 Emil Kamieniecki Electrical Characterization of Semiconductor Materials
US7698012B2 (en) 2001-06-19 2010-04-13 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US20100124792A1 (en) * 2008-11-14 2010-05-20 Applied Materials, Inc. Eddy current sensor with enhanced edge resolution
RU2420749C1 (ru) * 2010-04-06 2011-06-10 Закрытое Акционерное Общество "ТЕЛЕКОМ-СТВ" Устройство для бесконтактного измерения удельного сопротивления полупроводниковых материалов
RU2421742C1 (ru) * 2010-01-27 2011-06-20 Закрытое Акционерное Общество "ТЕЛЕКОМ-СТВ" Устройство для бесконтактного измерения удельного сопротивления кремниевого сырья
US20110169520A1 (en) * 2010-01-14 2011-07-14 Mks Instruments, Inc. Apparatus for measuring minority carrier lifetime and method for using the same
RU2424532C1 (ru) * 2010-03-12 2011-07-20 Государственное образовательное учреждение высшего профессионального образования Читинский государственный университет (ЧитГУ) Способ учета электрической энергии
US20110189856A1 (en) * 2010-01-29 2011-08-04 Kun Xu High Sensitivity Real Time Profile Control Eddy Current Monitoring System
US20110189925A1 (en) * 2010-01-29 2011-08-04 Iravani Hassan G High Sensitivity Real Time Profile Control Eddy Current Monitoring System
US8005634B2 (en) 2002-03-22 2011-08-23 Applied Materials, Inc. Copper wiring module control
RU2442178C2 (ru) * 2009-06-29 2012-02-10 Учреждение Российской академии наук Институт радиотехники и электроники им. В.А. Котельникова РАН Способ определения частоты узкополосного сигнала
US9023667B2 (en) 2011-04-27 2015-05-05 Applied Materials, Inc. High sensitivity eddy current monitoring system
US20150130554A1 (en) * 2012-05-03 2015-05-14 Rohde & Schwarz Gmbh & Co. Kg Ultra-wide band measurement bridge
US9335151B2 (en) 2012-10-26 2016-05-10 Applied Materials, Inc. Film measurement
US9631919B2 (en) 2013-06-12 2017-04-25 Applied Materials, Inc. Non-contact sheet resistance measurement of barrier and/or seed layers prior to electroplating
US9754846B2 (en) 2014-06-23 2017-09-05 Applied Materials, Inc. Inductive monitoring of conductive trench depth
US9911664B2 (en) 2014-06-23 2018-03-06 Applied Materials, Inc. Substrate features for inductive monitoring of conductive trench depth
US10350723B2 (en) 2016-09-16 2019-07-16 Applied Materials, Inc. Overpolishing based on electromagnetic inductive monitoring of trench depth
US10391610B2 (en) * 2016-10-21 2019-08-27 Applied Materials, Inc. Core configuration for in-situ electromagnetic induction monitoring system
US11004708B2 (en) 2016-10-28 2021-05-11 Applied Materials, Inc. Core configuration with alternating posts for in-situ electromagnetic induction monitoring system
US11231392B2 (en) 2016-12-27 2022-01-25 Industrial Technology Research Institute Detecting device and method thereof
CN114113789A (zh) * 2021-11-25 2022-03-01 天津大学 一种高频下测量金属薄膜电导率的装置及方法
CN114791447A (zh) * 2022-05-05 2022-07-26 杭州汇健科技有限公司 一种多通道气体传感器
EP4064981A1 (en) * 2019-11-25 2022-10-05 Koninklijke Philips N.V. Inductive sensing system and method

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0007408A1 (fr) * 1978-07-14 1980-02-06 International Business Machines Corporation Appareil de mesure sans contact de la résistance de feuille des matériaux
JPS6228674A (ja) * 1985-07-30 1987-02-06 Shinetsu Eng Kk 半導体ウエ−ハの導電率の非接触測定方法およびその装置
DE3815011A1 (de) * 1988-04-30 1989-11-16 Leybold Ag Einrichtung zum zerstoerungsfreien messen des ohmschen widerstands duenner schichten
DE3815009A1 (de) * 1988-04-30 1989-11-09 Leybold Ag Einrichtung und verfahren zum zerstoerungsfreien messen des ohmschen widerstands duenner schichten nach dem wirbelstrom-prinzip
JPH0389331A (ja) * 1989-09-01 1991-04-15 Asahi Optical Co Ltd カメラのシャッタ装置
DE4231392A1 (de) * 1992-09-19 1994-03-24 Daimler Benz Ag Verfahren zur Bestimmung der elektronischen Eigenschaften von Halbleiterschichtstrukturen

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3152303A (en) * 1962-06-11 1964-10-06 United Aircraft Corp Electrodeless radio frequency conductivity probe for fluids
US3234461A (en) * 1960-12-05 1966-02-08 Texas Instruments Inc Resistivity-measuring device including solid inductive sensor
US3544893A (en) * 1968-08-05 1970-12-01 Anatoly Ivanovich Savin Apparatus for noncontact measurement of semiconductor resistivity including a toroidal inductive coil with a gap
US3646436A (en) * 1969-12-22 1972-02-29 Gte Laboratories Inc Apparatus and method for measuring electrical resistance employing constant output voltage technique

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2115437C3 (de) * 1971-03-30 1978-04-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur berührungslosen Leitfähigkeitsmessung
JPS5228388B2 (enExample) * 1971-12-16 1977-07-26

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3234461A (en) * 1960-12-05 1966-02-08 Texas Instruments Inc Resistivity-measuring device including solid inductive sensor
US3152303A (en) * 1962-06-11 1964-10-06 United Aircraft Corp Electrodeless radio frequency conductivity probe for fluids
US3544893A (en) * 1968-08-05 1970-12-01 Anatoly Ivanovich Savin Apparatus for noncontact measurement of semiconductor resistivity including a toroidal inductive coil with a gap
US3646436A (en) * 1969-12-22 1972-02-29 Gte Laboratories Inc Apparatus and method for measuring electrical resistance employing constant output voltage technique

Cited By (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4075557A (en) * 1975-10-01 1978-02-21 Ckd Praha, Oborovy Podnik Contactless facilities for determining the specific resistance of a test sample
US4142145A (en) * 1977-12-22 1979-02-27 The United States Of America As Represented By The Secretary Of The Navy Method for determining conduction-band edge and electron affinity in semiconductors
US4144488A (en) * 1977-12-22 1979-03-13 The United States Of America As Represented By The Secretary Of The Navy Investigation of near-surface electronic properties in semiconductors by electron beam scanning
US4353029A (en) * 1978-02-13 1982-10-05 Ade Corporation Self inverting gauging system
US4591707A (en) * 1978-10-18 1986-05-27 Gao Gessellschaft Fur Automation Und Organisation Mbh Printed security with hallmarks
US4691940A (en) * 1978-10-18 1987-09-08 Gao Gesellschaft Fur Automation Und Organisation Mbh Printed security with hallmarks
US4286215A (en) * 1979-05-18 1981-08-25 Bell Telephone Laboratories, Incorporated Method and apparatus for the contactless monitoring carrier lifetime in semiconductor materials
US4779739A (en) * 1981-12-04 1988-10-25 Gte Products Corporation Method and apparatus for conductive film detection
US4842147A (en) * 1981-12-04 1989-06-27 Gte Products Corporation Method and apparatus for conductive film detection
US4428782A (en) 1982-07-23 1984-01-31 The Electricity Council Production of aluminium alloy strip
US4797614A (en) * 1984-11-02 1989-01-10 Sierracin Corporation Apparatus and method for measuring conductance including a temperature controlled resonant tank circuit with shielding
US5015952A (en) * 1988-04-13 1991-05-14 University Of California Apparatus for characterizing conductivity of materials by measuring the effect of induced shielding currents therein
EP0337253A3 (en) * 1988-04-13 1990-12-19 Department Of Energy Government Of The United States Apparatus and method for characterizing conductivity of materials
DE3815010A1 (de) * 1988-04-30 1989-11-09 Leybold Ag Schaltungsanordnung fuer den kombinierten einsatz einer induktiven und einer kapazitiven einrichtung fuer die zerstoerungsfreie messung des ohmschen wiederstands duenner schichten
US4958131A (en) * 1988-04-30 1990-09-18 Leybold Aktiengesellschaft Circuit arrangement for the combined application of an inductive and capacitative device for the non-destructive measurement of the ohmic resistance of thin layers
US5394084A (en) * 1991-12-23 1995-02-28 The Boeing Company Method and apparatus for reducing errors in eddy-current conductivity measurements due to lift-off by interpolating between a plurality of reference conductivity measurements
US5552704A (en) * 1993-06-25 1996-09-03 Tencor Instruments Eddy current test method and apparatus for measuring conductance by determining intersection of lift-off and selected curves
US5434505A (en) * 1993-07-30 1995-07-18 Litton Systems, Inc. Method and apparatus for low temperature HEMT-like material testing
US5576224A (en) * 1993-09-20 1996-11-19 At&T Global Information Solutions Company Method for manufacturing a monitor element
US5466614A (en) * 1993-09-20 1995-11-14 At&T Global Information Solutions Company Structure and method for remotely measuring process data
US5528142A (en) * 1995-06-19 1996-06-18 Feickert; Carl A. Resonant eddy analysis- a contactless, inductive method for deriving quantitative information about the conductivity and permeability of a test sample
US6448795B1 (en) * 1999-02-12 2002-09-10 Alexei Ermakov Three coil apparatus for inductive measurements of conductance
US6476604B1 (en) * 1999-04-12 2002-11-05 Chartered Semiconductor Manufacturing Ltd. Method and apparatus for identifying high metal content on a semiconductor surface
SG94333A1 (en) * 1999-04-12 2003-02-18 Chartered Semiconductor Mfg Methods to prevent metal deposited wafers from contaminating the front-end cleaning sinks or front-end furnaces
US7069101B1 (en) 1999-07-29 2006-06-27 Applied Materials, Inc. Computer integrated manufacturing techniques
US7174230B2 (en) 1999-07-29 2007-02-06 Applied Materials, Inc. Computer integrated manufacturing techniques
US6640151B1 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Multi-tool control system, method and medium
US6708074B1 (en) 2000-08-11 2004-03-16 Applied Materials, Inc. Generic interface builder
US8504620B2 (en) 2000-11-30 2013-08-06 Applied Materials, Inc. Dynamic subject information generation in message services of distributed object systems
US7188142B2 (en) 2000-11-30 2007-03-06 Applied Materials, Inc. Dynamic subject information generation in message services of distributed object systems in a semiconductor assembly line facility
US8694145B2 (en) 2001-06-19 2014-04-08 Applied Materials, Inc. Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles
US6910947B2 (en) 2001-06-19 2005-06-28 Applied Materials, Inc. Control of chemical mechanical polishing pad conditioner directional velocity to improve pad life
US7725208B2 (en) 2001-06-19 2010-05-25 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US7783375B2 (en) 2001-06-19 2010-08-24 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US8070909B2 (en) 2001-06-19 2011-12-06 Applied Materials, Inc. Feedback control of chemical mechanical polishing device providing manipulation of removal rate profiles
US7047099B2 (en) 2001-06-19 2006-05-16 Applied Materials Inc. Integrating tool, module, and fab level control
US6913938B2 (en) 2001-06-19 2005-07-05 Applied Materials, Inc. Feedback control of plasma-enhanced chemical vapor deposition processes
US7201936B2 (en) 2001-06-19 2007-04-10 Applied Materials, Inc. Method of feedback control of sub-atmospheric chemical vapor deposition processes
US7101799B2 (en) 2001-06-19 2006-09-05 Applied Materials, Inc. Feedforward and feedback control for conditioning of chemical mechanical polishing pad
US7698012B2 (en) 2001-06-19 2010-04-13 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US7160739B2 (en) 2001-06-19 2007-01-09 Applied Materials, Inc. Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles
US7337019B2 (en) 2001-07-16 2008-02-26 Applied Materials, Inc. Integration of fault detection with run-to-run control
US6984198B2 (en) 2001-08-14 2006-01-10 Applied Materials, Inc. Experiment management system, method and medium
US7225047B2 (en) 2002-03-19 2007-05-29 Applied Materials, Inc. Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements
US8005634B2 (en) 2002-03-22 2011-08-23 Applied Materials, Inc. Copper wiring module control
US20040080326A1 (en) * 2002-07-15 2004-04-29 Klaus Topp Device and method for determining the sheet resistance of samples
US6999836B2 (en) 2002-08-01 2006-02-14 Applied Materials, Inc. Method, system, and medium for handling misrepresentative metrology data within an advanced process control system
US7966087B2 (en) 2002-11-15 2011-06-21 Applied Materials, Inc. Method, system and medium for controlling manufacture process having multivariate input parameters
US7272459B2 (en) 2002-11-15 2007-09-18 Applied Materials, Inc. Method, system and medium for controlling manufacture process having multivariate input parameters
US7333871B2 (en) 2003-01-21 2008-02-19 Applied Materials, Inc. Automated design and execution of experiments with integrated model creation for semiconductor manufacturing tools
US7205228B2 (en) 2003-06-03 2007-04-17 Applied Materials, Inc. Selective metal encapsulation schemes
US10105811B2 (en) 2003-07-31 2018-10-23 Applied Materials, Inc. Eddy current system having an elongated core for in-situ profile measurement
US7112960B2 (en) 2003-07-31 2006-09-26 Applied Materials, Inc. Eddy current system for in-situ profile measurement
US7999540B2 (en) 2003-07-31 2011-08-16 Applied Materials, Inc. Eddy current apparatus and method for in-situ profile measurement
US20050024047A1 (en) * 2003-07-31 2005-02-03 Applied Materials, Inc. Eddy current system for in-situ profile measurement
US20070139043A1 (en) * 2003-07-31 2007-06-21 Applied Materials, Inc., A Delaware Corporation Eddy current system for in-situ profile measurement
US7354332B2 (en) 2003-08-04 2008-04-08 Applied Materials, Inc. Technique for process-qualifying a semiconductor manufacturing tool using metrology data
US7005851B2 (en) * 2003-09-30 2006-02-28 General Electric Company Methods and apparatus for inspection utilizing pulsed eddy current
US20050068026A1 (en) * 2003-09-30 2005-03-31 Andrew May Methods and apparatus for inspection utilizing pulsed eddy current
US7356377B2 (en) 2004-01-29 2008-04-08 Applied Materials, Inc. System, method, and medium for monitoring performance of an advanced process control system
US7349753B2 (en) 2004-05-28 2008-03-25 Applied Materials, Inc. Adjusting manufacturing process control parameter using updated process threshold derived from uncontrollable error
US7221990B2 (en) 2004-05-28 2007-05-22 Applied Materials, Inc. Process control by distinguishing a white noise component of a process variance
US7096085B2 (en) 2004-05-28 2006-08-22 Applied Materials Process control by distinguishing a white noise component of a process variance
US6961626B1 (en) 2004-05-28 2005-11-01 Applied Materials, Inc Dynamic offset and feedback threshold
WO2008065112A1 (de) * 2006-11-27 2008-06-05 Endress+Hauser Conducta Gesellschaft Für Mess- Und Regeltechnik Mbh+Co. Kg Induktiver leitfähigkeitssensor
US7898280B2 (en) 2008-09-08 2011-03-01 Emil Kamieniecki Electrical characterization of semiconductor materials
US20100060307A1 (en) * 2008-09-08 2010-03-11 Emil Kamieniecki Electrical Characterization of Semiconductor Materials
US20100124792A1 (en) * 2008-11-14 2010-05-20 Applied Materials, Inc. Eddy current sensor with enhanced edge resolution
US8284560B2 (en) 2008-11-14 2012-10-09 Applied Materials, Inc. Eddy current sensor with enhanced edge resolution
RU2442178C2 (ru) * 2009-06-29 2012-02-10 Учреждение Российской академии наук Институт радиотехники и электроники им. В.А. Котельникова РАН Способ определения частоты узкополосного сигнала
US20110169520A1 (en) * 2010-01-14 2011-07-14 Mks Instruments, Inc. Apparatus for measuring minority carrier lifetime and method for using the same
CN102713591A (zh) * 2010-01-14 2012-10-03 Mks仪器股份有限公司 用于测量少数载流子寿命的装置及其使用方法
RU2421742C1 (ru) * 2010-01-27 2011-06-20 Закрытое Акционерное Общество "ТЕЛЕКОМ-СТВ" Устройство для бесконтактного измерения удельного сопротивления кремниевого сырья
US20110189856A1 (en) * 2010-01-29 2011-08-04 Kun Xu High Sensitivity Real Time Profile Control Eddy Current Monitoring System
US20110189925A1 (en) * 2010-01-29 2011-08-04 Iravani Hassan G High Sensitivity Real Time Profile Control Eddy Current Monitoring System
RU2424532C1 (ru) * 2010-03-12 2011-07-20 Государственное образовательное учреждение высшего профессионального образования Читинский государственный университет (ЧитГУ) Способ учета электрической энергии
RU2420749C1 (ru) * 2010-04-06 2011-06-10 Закрытое Акционерное Общество "ТЕЛЕКОМ-СТВ" Устройство для бесконтактного измерения удельного сопротивления полупроводниковых материалов
US9023667B2 (en) 2011-04-27 2015-05-05 Applied Materials, Inc. High sensitivity eddy current monitoring system
US20150130554A1 (en) * 2012-05-03 2015-05-14 Rohde & Schwarz Gmbh & Co. Kg Ultra-wide band measurement bridge
US9823284B2 (en) * 2012-05-03 2017-11-21 Rohde & Schwarz Gmbh & Co. Kg Ultra-wide band measurement bridge
US9335151B2 (en) 2012-10-26 2016-05-10 Applied Materials, Inc. Film measurement
US9631919B2 (en) 2013-06-12 2017-04-25 Applied Materials, Inc. Non-contact sheet resistance measurement of barrier and/or seed layers prior to electroplating
US10260855B2 (en) 2013-06-12 2019-04-16 Applied Materials, Inc. Electroplating tool with feedback of metal thickness distribution and correction
US10234261B2 (en) 2013-06-12 2019-03-19 Applied Materials, Inc. Fast and continuous eddy-current metrology of a conductive film
US9754846B2 (en) 2014-06-23 2017-09-05 Applied Materials, Inc. Inductive monitoring of conductive trench depth
US10103073B2 (en) 2014-06-23 2018-10-16 Applied Materials, Inc. Inductive monitoring of conductive trench depth
US9911664B2 (en) 2014-06-23 2018-03-06 Applied Materials, Inc. Substrate features for inductive monitoring of conductive trench depth
US10741459B2 (en) 2014-06-23 2020-08-11 Applied Materials, Inc. Inductive monitoring of conductive loops
US10199281B2 (en) 2014-06-23 2019-02-05 Applied Materials, Inc. Substrate features for inductive monitoring of conductive trench depth
US10350723B2 (en) 2016-09-16 2019-07-16 Applied Materials, Inc. Overpolishing based on electromagnetic inductive monitoring of trench depth
US11638982B2 (en) 2016-10-21 2023-05-02 Applied Materials, Inc. Core configuration for in-situ electromagnetic induction monitoring system
US10391610B2 (en) * 2016-10-21 2019-08-27 Applied Materials, Inc. Core configuration for in-situ electromagnetic induction monitoring system
US12103135B2 (en) 2016-10-21 2024-10-01 Applied Materials, Inc. Core configuration for in-situ electromagnetic induction monitoring system
US11004708B2 (en) 2016-10-28 2021-05-11 Applied Materials, Inc. Core configuration with alternating posts for in-situ electromagnetic induction monitoring system
US11231392B2 (en) 2016-12-27 2022-01-25 Industrial Technology Research Institute Detecting device and method thereof
EP4064981A1 (en) * 2019-11-25 2022-10-05 Koninklijke Philips N.V. Inductive sensing system and method
CN114113789A (zh) * 2021-11-25 2022-03-01 天津大学 一种高频下测量金属薄膜电导率的装置及方法
CN114113789B (zh) * 2021-11-25 2023-07-21 天津大学 一种高频下测量金属薄膜电导率的装置及方法
CN114791447A (zh) * 2022-05-05 2022-07-26 杭州汇健科技有限公司 一种多通道气体传感器
CN114791447B (zh) * 2022-05-05 2024-01-12 杭州汇健科技有限公司 一种多通道气体传感器

Also Published As

Publication number Publication date
SE7608925L (sv) 1977-02-22
DE2636999A1 (de) 1977-03-17
DE2636999B2 (de) 1978-03-30
GB1552948A (en) 1979-09-19
NL168051B (nl) 1981-09-16
CA1057823A (en) 1979-07-03
BE845220A (fr) 1976-12-16
NL7609128A (nl) 1977-02-23
FR2321702B1 (enExample) 1981-09-18
JPS5319874A (en) 1978-02-23
JPS5520550B2 (enExample) 1980-06-03
ES450860A1 (es) 1977-08-16
DE2636999C3 (de) 1982-03-18
IT1071415B (it) 1985-04-10
SE410901B (sv) 1979-11-12
FR2321702A1 (fr) 1977-03-18

Similar Documents

Publication Publication Date Title
US4000458A (en) Method for the noncontacting measurement of the electrical conductivity of a lamella
Stibal et al. Contactless evaluation of semi-insulating GaAs wafer resistivity using the time-dependent charge measurement
US4797614A (en) Apparatus and method for measuring conductance including a temperature controlled resonant tank circuit with shielding
Miller et al. Contactless measurement of semiconductor conductivity by radio frequency‐free‐carrier power absorption
US4286215A (en) Method and apparatus for the contactless monitoring carrier lifetime in semiconductor materials
US4302721A (en) Non-contacting resistivity instrument with structurally related conductance and distance measuring transducers
US2933677A (en) Probe for a thickness testing gage
US5528153A (en) Method for non-destructive, non-contact measurement of dielectric constant of thin films
US3234461A (en) Resistivity-measuring device including solid inductive sensor
US4564810A (en) Aluminum cladding thickness measurement probe and instrument having an automatic calibration and readout circuit coupled to a differential amplifier circuit
US3815016A (en) Method of measuring thickness of nonmetallic paving material with compensation for properties of the material
US2581394A (en) Method of and apparatus for measuring the thickness of nonconducting coatings or films
US6448795B1 (en) Three coil apparatus for inductive measurements of conductance
US3805160A (en) Method for non-contact semiconductor resistivity measurement
EP0337253A2 (en) Apparatus and method for characterizing conductivity of materials
US3315156A (en) Method for determining the electrical resistance of a body of extremely pure semiconductor material for electronic purposes
US5091696A (en) Metallic coating measuring method and apparatus
US2489092A (en) High-frequency surface testing instrument
US3450985A (en) Eddy current testing system including bridged-t network
US4023102A (en) Test fixture
US2809346A (en) Apparatus for measuring the thickness of electroconductive films
US20060056488A1 (en) Method and apparatus for measuring temperature with the use of an inductive sensor
US5936401A (en) Device and process for measuring electrical properties at a plurality of locations on thin film superconductors
JPS6166104A (ja) 金属薄膜膜厚測定方法
Kakimoto et al. Improvements on the measurements of dielectric constant and dissipation factor in a wide frequency range