CS202665B1
(cs)
*
|
1975-10-01 |
1981-01-30 |
Milos Jurca |
Zařízení pro měření specifického odporu vodivých a polovodivých materiálů
|
US4144488A
(en)
*
|
1977-12-22 |
1979-03-13 |
The United States Of America As Represented By The Secretary Of The Navy |
Investigation of near-surface electronic properties in semiconductors by electron beam scanning
|
US4142145A
(en)
*
|
1977-12-22 |
1979-02-27 |
The United States Of America As Represented By The Secretary Of The Navy |
Method for determining conduction-band edge and electron affinity in semiconductors
|
US4353029A
(en)
*
|
1978-02-13 |
1982-10-05 |
Ade Corporation |
Self inverting gauging system
|
EP0007408A1
(fr)
*
|
1978-07-14 |
1980-02-06 |
International Business Machines Corporation |
Appareil de mesure sans contact de la résistance de feuille des matériaux
|
DE2845401C2
(de)
*
|
1978-10-18 |
1980-10-02 |
Gao Gesellschaft Fuer Automation Und Organisation Mbh, 8000 Muenchen |
Bedrucktes Wertpapier mit Echtheitsmerkmalen und Verfahren zur Prüfung seineT Echtheit
|
US4286215A
(en)
*
|
1979-05-18 |
1981-08-25 |
Bell Telephone Laboratories, Incorporated |
Method and apparatus for the contactless monitoring carrier lifetime in semiconductor materials
|
US4779739A
(en)
*
|
1981-12-04 |
1988-10-25 |
Gte Products Corporation |
Method and apparatus for conductive film detection
|
US4842147A
(en)
*
|
1981-12-04 |
1989-06-27 |
Gte Products Corporation |
Method and apparatus for conductive film detection
|
US4797614A
(en)
*
|
1984-11-02 |
1989-01-10 |
Sierracin Corporation |
Apparatus and method for measuring conductance including a temperature controlled resonant tank circuit with shielding
|
JPS6228674A
(ja)
*
|
1985-07-30 |
1987-02-06 |
Shinetsu Eng Kk |
半導体ウエ−ハの導電率の非接触測定方法およびその装置
|
US5015952A
(en)
*
|
1988-04-13 |
1991-05-14 |
University Of California |
Apparatus for characterizing conductivity of materials by measuring the effect of induced shielding currents therein
|
DE3815011A1
(de)
*
|
1988-04-30 |
1989-11-16 |
Leybold Ag |
Einrichtung zum zerstoerungsfreien messen des ohmschen widerstands duenner schichten
|
DE3815009A1
(de)
*
|
1988-04-30 |
1989-11-09 |
Leybold Ag |
Einrichtung und verfahren zum zerstoerungsfreien messen des ohmschen widerstands duenner schichten nach dem wirbelstrom-prinzip
|
DE3815010A1
(de)
*
|
1988-04-30 |
1989-11-09 |
Leybold Ag |
Schaltungsanordnung fuer den kombinierten einsatz einer induktiven und einer kapazitiven einrichtung fuer die zerstoerungsfreie messung des ohmschen wiederstands duenner schichten
|
JPH0389331A
(ja)
*
|
1989-09-01 |
1991-04-15 |
Asahi Optical Co Ltd |
カメラのシャッタ装置
|
US5394084A
(en)
*
|
1991-12-23 |
1995-02-28 |
The Boeing Company |
Method and apparatus for reducing errors in eddy-current conductivity measurements due to lift-off by interpolating between a plurality of reference conductivity measurements
|
DE4231392A1
(de)
*
|
1992-09-19 |
1994-03-24 |
Daimler Benz Ag |
Verfahren zur Bestimmung der elektronischen Eigenschaften von Halbleiterschichtstrukturen
|
US5552704A
(en)
*
|
1993-06-25 |
1996-09-03 |
Tencor Instruments |
Eddy current test method and apparatus for measuring conductance by determining intersection of lift-off and selected curves
|
US5434505A
(en)
*
|
1993-07-30 |
1995-07-18 |
Litton Systems, Inc. |
Method and apparatus for low temperature HEMT-like material testing
|
US5466614A
(en)
*
|
1993-09-20 |
1995-11-14 |
At&T Global Information Solutions Company |
Structure and method for remotely measuring process data
|
US5528142A
(en)
*
|
1995-06-19 |
1996-06-18 |
Feickert; Carl A. |
Resonant eddy analysis- a contactless, inductive method for deriving quantitative information about the conductivity and permeability of a test sample
|
US6448795B1
(en)
*
|
1999-02-12 |
2002-09-10 |
Alexei Ermakov |
Three coil apparatus for inductive measurements of conductance
|
US6476604B1
(en)
*
|
1999-04-12 |
2002-11-05 |
Chartered Semiconductor Manufacturing Ltd. |
Method and apparatus for identifying high metal content on a semiconductor surface
|
US7069101B1
(en)
|
1999-07-29 |
2006-06-27 |
Applied Materials, Inc. |
Computer integrated manufacturing techniques
|
US6640151B1
(en)
|
1999-12-22 |
2003-10-28 |
Applied Materials, Inc. |
Multi-tool control system, method and medium
|
US6708074B1
(en)
|
2000-08-11 |
2004-03-16 |
Applied Materials, Inc. |
Generic interface builder
|
US7188142B2
(en)
|
2000-11-30 |
2007-03-06 |
Applied Materials, Inc. |
Dynamic subject information generation in message services of distributed object systems in a semiconductor assembly line facility
|
US7698012B2
(en)
|
2001-06-19 |
2010-04-13 |
Applied Materials, Inc. |
Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
|
US7160739B2
(en)
|
2001-06-19 |
2007-01-09 |
Applied Materials, Inc. |
Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles
|
US6913938B2
(en)
|
2001-06-19 |
2005-07-05 |
Applied Materials, Inc. |
Feedback control of plasma-enhanced chemical vapor deposition processes
|
US7101799B2
(en)
|
2001-06-19 |
2006-09-05 |
Applied Materials, Inc. |
Feedforward and feedback control for conditioning of chemical mechanical polishing pad
|
US7047099B2
(en)
|
2001-06-19 |
2006-05-16 |
Applied Materials Inc. |
Integrating tool, module, and fab level control
|
US6910947B2
(en)
|
2001-06-19 |
2005-06-28 |
Applied Materials, Inc. |
Control of chemical mechanical polishing pad conditioner directional velocity to improve pad life
|
US7201936B2
(en)
|
2001-06-19 |
2007-04-10 |
Applied Materials, Inc. |
Method of feedback control of sub-atmospheric chemical vapor deposition processes
|
US7337019B2
(en)
|
2001-07-16 |
2008-02-26 |
Applied Materials, Inc. |
Integration of fault detection with run-to-run control
|
US6984198B2
(en)
|
2001-08-14 |
2006-01-10 |
Applied Materials, Inc. |
Experiment management system, method and medium
|
US7225047B2
(en)
|
2002-03-19 |
2007-05-29 |
Applied Materials, Inc. |
Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements
|
US20030199112A1
(en)
|
2002-03-22 |
2003-10-23 |
Applied Materials, Inc. |
Copper wiring module control
|
DE10231989B3
(de)
*
|
2002-07-15 |
2004-04-08 |
Wurdack, Stefan, Dr. |
Vorrichtung und Verfahren zum Bestimmen eines Flächenwiderstands von Proben
|
US6999836B2
(en)
|
2002-08-01 |
2006-02-14 |
Applied Materials, Inc. |
Method, system, and medium for handling misrepresentative metrology data within an advanced process control system
|
WO2004046835A2
(en)
|
2002-11-15 |
2004-06-03 |
Applied Materials, Inc. |
Method, system and medium for controlling manufacture process having multivariate input parameters
|
US7333871B2
(en)
|
2003-01-21 |
2008-02-19 |
Applied Materials, Inc. |
Automated design and execution of experiments with integrated model creation for semiconductor manufacturing tools
|
US7205228B2
(en)
|
2003-06-03 |
2007-04-17 |
Applied Materials, Inc. |
Selective metal encapsulation schemes
|
US7112960B2
(en)
*
|
2003-07-31 |
2006-09-26 |
Applied Materials, Inc. |
Eddy current system for in-situ profile measurement
|
US7354332B2
(en)
|
2003-08-04 |
2008-04-08 |
Applied Materials, Inc. |
Technique for process-qualifying a semiconductor manufacturing tool using metrology data
|
US7005851B2
(en)
*
|
2003-09-30 |
2006-02-28 |
General Electric Company |
Methods and apparatus for inspection utilizing pulsed eddy current
|
US7356377B2
(en)
|
2004-01-29 |
2008-04-08 |
Applied Materials, Inc. |
System, method, and medium for monitoring performance of an advanced process control system
|
US6961626B1
(en)
|
2004-05-28 |
2005-11-01 |
Applied Materials, Inc |
Dynamic offset and feedback threshold
|
US7096085B2
(en)
|
2004-05-28 |
2006-08-22 |
Applied Materials |
Process control by distinguishing a white noise component of a process variance
|
DE102006056174A1
(de)
*
|
2006-11-27 |
2008-05-29 |
Endress + Hauser Conducta Gesellschaft für Mess- und Regeltechnik mbH + Co. KG |
Induktiver Leitfähigkeitssensor
|
US7898280B2
(en)
*
|
2008-09-08 |
2011-03-01 |
Emil Kamieniecki |
Electrical characterization of semiconductor materials
|
WO2010056769A2
(en)
*
|
2008-11-14 |
2010-05-20 |
Applied Materials, Inc. |
Eddy current sensor with enhanced edge resolution
|
US20110169520A1
(en)
*
|
2010-01-14 |
2011-07-14 |
Mks Instruments, Inc. |
Apparatus for measuring minority carrier lifetime and method for using the same
|
TW201201957A
(en)
*
|
2010-01-29 |
2012-01-16 |
Applied Materials Inc |
High sensitivity real time profile control eddy current monitoring system
|
US20110189856A1
(en)
*
|
2010-01-29 |
2011-08-04 |
Kun Xu |
High Sensitivity Real Time Profile Control Eddy Current Monitoring System
|
US9023667B2
(en)
|
2011-04-27 |
2015-05-05 |
Applied Materials, Inc. |
High sensitivity eddy current monitoring system
|
DE102012207341A1
(de)
*
|
2012-05-03 |
2013-11-07 |
Rohde & Schwarz Gmbh & Co. Kg |
Ultrabreitbandige Messbrücke
|
US9335151B2
(en)
|
2012-10-26 |
2016-05-10 |
Applied Materials, Inc. |
Film measurement
|
US9631919B2
(en)
|
2013-06-12 |
2017-04-25 |
Applied Materials, Inc. |
Non-contact sheet resistance measurement of barrier and/or seed layers prior to electroplating
|
US9911664B2
(en)
|
2014-06-23 |
2018-03-06 |
Applied Materials, Inc. |
Substrate features for inductive monitoring of conductive trench depth
|
US9754846B2
(en)
|
2014-06-23 |
2017-09-05 |
Applied Materials, Inc. |
Inductive monitoring of conductive trench depth
|
TW201822953A
(zh)
|
2016-09-16 |
2018-07-01 |
美商應用材料股份有限公司 |
基於溝槽深度的電磁感應監控進行的過拋光
|
JP7140760B2
(ja)
*
|
2016-10-21 |
2022-09-21 |
アプライド マテリアルズ インコーポレイテッド |
インシトゥ電磁誘導モニタシステムのコア構成
|
US11004708B2
(en)
|
2016-10-28 |
2021-05-11 |
Applied Materials, Inc. |
Core configuration with alternating posts for in-situ electromagnetic induction monitoring system
|
US11231392B2
(en)
|
2016-12-27 |
2022-01-25 |
Industrial Technology Research Institute |
Detecting device and method thereof
|
CN114113789B
(zh)
*
|
2021-11-25 |
2023-07-21 |
天津大学 |
一种高频下测量金属薄膜电导率的装置及方法
|
CN114791447B
(zh)
*
|
2022-05-05 |
2024-01-12 |
杭州汇健科技有限公司 |
一种多通道气体传感器
|