US3919968A - Reaction device for pyrolytic deposition of semiconductor material - Google Patents

Reaction device for pyrolytic deposition of semiconductor material Download PDF

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Publication number
US3919968A
US3919968A US525640A US52564074A US3919968A US 3919968 A US3919968 A US 3919968A US 525640 A US525640 A US 525640A US 52564074 A US52564074 A US 52564074A US 3919968 A US3919968 A US 3919968A
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United States
Prior art keywords
pressure
reaction
control means
chamber
gas
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Expired - Lifetime
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US525640A
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English (en)
Inventor
Herbert Sandmann
Wolfgang Dietze
Ulrich Rucha
Gerhard Barowski
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Siemens AG
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Siemens AG
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Priority claimed from DE19732359563 external-priority patent/DE2359563C3/de
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor

Definitions

  • the invention relates to production of semiconductor bodies by pyrolytic decomposition of gaseous semiconductor compounds on heated mandrels within a suitable environment and somewhat more particularly to an improved reaction device for use in such production.
  • Prior Art Reaction devices for use in the production of semiconductor bodies, such as cylindrical silicon bodies from gaseous silicon compounds are known, for example, from German Pat. No. 1,198,787.
  • such reaction devices comprise a quartz or glass dome mechanically sealed to an appropriate shaped base plate and include gas inlet and outlet conduits, electrodes and mandrels connected thereto.
  • the electrodes pass through openings in the base plate and are electrically insulated therefrom.
  • the mandrels may comprise parallel silicon or graphite rods mounted on the spacedapart electrodes so as to extend into the dome.
  • the upper ends of the mandrels are electrically interconnected with one another via a conductive bridge, such as composed of silicon or graphite.
  • An electrical energy source is appropriately connected to the electrodes so that current flows through the electrodes and into the mandrels to heat them to a required reaction temperature.
  • a reaction gas for example, a mixture of silane and hydrogen, is fed at an appropriate rate into the dome and in contact with the heated mandrel surfaces.
  • a semiconductorv material such as silicon, deposits from the gaseousphase and a shaped body thereof is formed about the mandrels.
  • the pressure-sensing control means comprise a gaspressure-sensing device in communication with the interior of the dome and/or the interior of the pressureresistant housing and is operationally coupled to a control means which receives an appropriate signal from the sensing device and regulates a supply of current to the electrodes and regulates a supply of reaction gas to the interior of the dome and/or the supply of inert gas to the interior of the pressure-resistant housing.
  • An audio or visual alarm system may also be operationally coupled with the control means for activation upon receipt of the appropriate signal.
  • the gaspressure-sensing device produces a signal to the control means when the pressure within one of the pressurized chambers in the reaction device decreases below a predetermined minimum value or increases above a predetermined maximum value for blocking the current to the electrodes and/or for blocking the supply of reaction gas to the interior of the dome and/or for activating the alarm system coupled to the control means.
  • the gas-pressure-sensing device produces a signal to the control means when the difference between the pressure within the interior dome and the pressure within the pressureresistant housing is outside a predetermined range for appropriately regulating the current and gas supplies and/or the alarm system as set forth above.
  • FIG. 1 is an elevated schematic view of an embodiment of a reaction device constructed and operable in accordance with the principles of the invention
  • FIG. 2 is a somewhat similar view of another embodiment of the invention.
  • FIG. 3 is a partial schematic view of yet another embodiment of the invention.
  • the base plate I also includes an aperture for a gas conduit of a manometer l2. Appropriate seals are provided at the various base plate apertures for rendering the base plate gas impermeable.
  • a pressure-resistant housing 8 such as a steel box, is positioned to encompass the reaction chamber 7a.
  • the housing 8 has an apertured bottom 8a so that the various connections between the energy and gas conduits within the reaction chamber 7a can be appropriately connected to their respective supply sources.
  • the base plate 1 partially overlaps the peripheral edges of the apertured bottom 8a of housing 8 so as to provide a gas-tight seal between the pressure chamber Pc inside the housing 8 and the exterior thereof.
  • the upper area of housing 8 may be sealed with a gas impermeable closure member 9.
  • the mandrels 5 are heated in a reduction gas atmosphere supplied via conduit 2 by the electrical current from the operational current source 10 to the high temperature required (i.e. about 1l00 to l400 C.) for deposition of silicon or other semiconductor material and the actual reaction gas is then supplied to the incandescent mandrels.
  • the high temperature required i.e. about 1l00 to l400 C.
  • the embodiment of the invention illustrated at FIG. 1 may include two manometers 12 and 13 which, in addition to sensing gas pressure, also function as electrical contacts.
  • the contact manometer l2 monitors the pressure within the pressure chamber Pc of housing 8 and the contact manometer 13 monitors the pressure within the reaction chamber 7a.
  • the contact manometer 12 is constructed so as to generate a signal for closing an electrical circuit that activates an automatic control means 14 when the pressure within chamber Pc decreases below a predetermined minimum value.
  • the contact manometer 13 is similarly constructed so that is generates a signal activating the control means 14 when the pressure within the chamber 7a exceeds a predetermined maximum value.
  • the automatic control means 14 Upon receipt of a signal from either manometer 12 or manometer 13, the automatic control means 14 is activated and performs the following functions:
  • valve means 16 which may comprise a magnetically operable valve mechanism, within the gas 4 conduit between the reaction gas source and the chamber 7a;
  • an alarm system 17 which may be an optical and/or an acoustical alarm system.
  • an electrical contact-difference manometer which senses a difference between the pressure in chamber 7a and chamber Pc may be utilized to activate the automatic control means 14.
  • An exemplary form of this embodiment is shown at FIG. 2.
  • the reaction chamber 7a is in communication with the pressure chamber Pc via a bridging conduit 18.
  • the bridging conduit 18 is provided with a gas impermeable elastic membrane 19 and a pressure-sensitive electronic element 20, such as a semiconductor element having a pn-junction, in operational relation with membrane 19 and in electrical communication with the automatic control means 14.
  • a motor M may be operationally coupled to a suitable pressure regulating valve 11b and to the control means 14 so that upon activation of control means 14, the motor M is energized and adjusts the valve means 11b to increase the infeed of the pressure gas into chamber Pc.
  • the automatic control means 14 is activated in this embodiment as soon as the pressure difference between the chambers 7a and Fe drops below a predetermined minimum value.
  • a connecting capillary conduit 24 is provided between the interior of dome 7 and the interior of housing 8.
  • a sensitive gas flow member 25 is coupled with the capillary conduit 24 for controlling the flow of gas therethrough and is in electrical communication with control means 14.
  • the flow member 15 not only controls the flow of gas but also functions as an electrical contact maker, i.e. it generates an electrical signal when the speed of gas flow through the capillary 24 exceeds a value beyond a predetermined absolute value.
  • the signal generated activates the control means 14 to initiate corrective measures as explained hereinbefore. Since the speed of gas flow through the capillary is determined by the pressure difference between the two chambers, this embodiment of the invention becomes immediately understandable by those skilled in the art.
  • the input opening of the capillary into the actual reaction chamber i.e. the interior of dome 7, is advantageously located in or near the gas discharge conduit 3 so that the pressure gas, which may be nitrogen, cannot adversely affect the deposited semiconductor material within the reaction chamber.
  • the diameter of the capillary 24 is of a sufficiently small size to allow a sensitive flow meter to control the leakage of gas through the capillary and yet minimize the loss of pressurized gas or reaction gas through such a capillary.
  • Various flow rates or speed indicators may be substituted for the flow meter shown, for example, sensitive hot conductor elements (i.e. PTC resistor elements) or sensitive cold conductor elements which have a self-heating rate that changes in response to changes in the gas flow rates may be used. In instances where such temperature-sensitive conductor elements are utilized, it is advisable to periodically or continuously compensate for the leakage losses of the pressure gas over the capillary.
  • a reaction device for the deposition of a semiconductor material onto a heated surface from a reaction gas having a gaseous compound of said semiconductor material therein, including a base plate having means for supporting at least one pair of spaced-apart mandrels which are electrically interconnected with an operational current source capable of heating said mandrels to a select temperature, a dome composed of a glass-like material and positioned in contact with said .base plate so as to enclose a reaction chamber about said mandrels, means for supplying a pressurized reaction gas from a source thereof to said reaction chamber, a pressure-resistant container having a pressure chamber therein surrounding said dome and at least a portion of said base plate and a means for suppplying a pressurized inert gas from a source thereof to said pressure chamber for applying a gas pressure onto said dome to hold said dome in a gas impermeable relation with said base plate; the improvement comprising:
  • a pressure-sensing control means operationally interconected between said operational current source and said mandrels and between said pressure chamber and said means for supplying a pressurized reaction gas from a source thereof to said reaction chamber so that when the pressure within said pressure chamber drops below a predetermined minimum value said control means generate a signal to block the current flow to said mandrels and generate a signal to block the reaction gas flow to said reaction chamber.
  • reaction device as defined in claim 1 including an alarm system operationally interconnected with said control means, said alarm system being activated by a pressure-responsive signal generated by said control means.
  • said pressure-sensing control means includes a contact manometer which senses the gas pressure within said pressure chamber and generates an electronic signal in response thereto.
  • said pressure-sensing control means is also operationally interconnected between said reaction chamber and said means for supplying a pressurized reaction gas 6 from a source thereof to said reaction chamber so that when the pressure within said reaction chamber increases above the predetermined maximum value said control means generates a signal to block the current flow to said mandrels and generates a signal to block the reaction gas flow to said reaction chamber.
  • said pressure-sensing control means includes a contact manometer which senses the gas pressure within said reaction chamber and generates an electronic signal in response thereto.
  • a reaction device as defined in claim 6 including an elastic gas impermeable membrane and positioned in communication with said pressure chamber and said reaction chamber and a pressure-sensitive electronic signal generating element operationally coupled to said membrane and said pressure-sensing control means so that when the difference in pressure between said chambers drops below a predetermined minimum value said membrane exerts a pressure on said pressure-sensitive electronic signal generating element which generates a signal actuating said control means to block the current flow to said mandrels and to block the reaction gas flow to said reaction chamber.
  • said pressure-sensing control means is also operationally interconnected between said pressure chamber and said means for supplying a pressurized inert gas from a source thereof to said pressure chamber so that when the difference in pressure between said chambers exceeds a predetermined maximum value said membrane exerts a pressure on said pressure-sensitive electronic signal generating element which produces a signal actuating said control means to increase the inert gas flow to said pressure chamber.
  • a reaction device as defined in claim 6 including a capillary interconnection between said reaction chamber and said pressure chamber and a flow meter operationally interconnected between said capillary and said control means capable of generating a signal when the speed of gas flow past said flow meter drops below a predetermined minimum value for activating said control means to block the current flow to said mandrels and to block the reaction gas flow to said reaction chamber.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
US525640A 1973-11-29 1974-11-20 Reaction device for pyrolytic deposition of semiconductor material Expired - Lifetime US3919968A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732359563 DE2359563C3 (de) 1973-05-14 1973-11-29 Reaktionsgefäß zum Abscheiden von Halbleitermaterial

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US3919968A true US3919968A (en) 1975-11-18

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US (1) US3919968A (ja)
JP (1) JPS5523457B2 (ja)
BE (1) BE817066R (ja)
CA (1) CA1055817A (ja)
DK (1) DK590174A (ja)
IT (1) IT1046164B (ja)
PL (1) PL97254B4 (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4023520A (en) * 1975-04-28 1977-05-17 Siemens Aktiengesellschaft Reaction container for deposition of elemental silicon
US4100310A (en) * 1975-01-20 1978-07-11 Hitachi, Ltd. Method of doping inpurities
US4408563A (en) * 1978-08-09 1983-10-11 Leybold-Heraeus Gmbh Apparatus for regulating the evaporation rate of oxidizable substances in reactive vacuum deposition
US5327454A (en) * 1989-11-04 1994-07-05 Komatsu Electronic Metlas Co., Inc. Bridge for connecting cores in a manufacturing equipment of polycrystal silicon
US6402844B1 (en) * 1998-09-08 2002-06-11 Tokyo Electron Limited Substrate processing method and substrate processing unit
US6482649B1 (en) 1997-07-29 2002-11-19 Leybold, Inficon, Inc. Acoustic consumption monitor
US6770144B2 (en) * 2000-07-25 2004-08-03 International Business Machines Corporation Multideposition SACVD reactor
US20040173312A1 (en) * 2001-09-06 2004-09-09 Kouji Shibayama Vacuum exhaust apparatus and drive method of vacuum apparatus
US7980003B2 (en) * 2006-01-25 2011-07-19 Tokyo Electron Limited Heat processing apparatus and heat processing method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61246370A (ja) * 1985-04-23 1986-11-01 Sakaguchi Dennetsu Kk 気相化学反応炉
MD4167C1 (ro) * 2010-12-23 2012-12-31 Государственный Медицинский И Фармацевтический Университет "Nicolae Testemitanu" Республики Молдова Dispozitiv şi metodă de rezecţie a cartilajului patrulater al septului nazal

Citations (7)

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Publication number Priority date Publication date Assignee Title
US2854226A (en) * 1955-03-28 1958-09-30 Surface Combustion Corp Annealing cover furnace with improved inner cover seal
US3293074A (en) * 1963-11-05 1966-12-20 Siemens Ag Method and apparatus for growing monocrystalline layers on monocrystalline substrates of semiconductor material
US3391270A (en) * 1965-07-27 1968-07-02 Monsanto Co Electric resistance heaters
US3460816A (en) * 1962-01-02 1969-08-12 Gen Electric Fluxless aluminum brazing furnace
US3492969A (en) * 1966-02-25 1970-02-03 Siemens Ag Apparatus for indiffusing impurity in semiconductor members
US3690290A (en) * 1971-04-29 1972-09-12 Motorola Inc Apparatus for providing epitaxial layers on a substrate
US3705567A (en) * 1970-07-06 1972-12-12 Siemens Ag Device for indiffussing dopants into semiconductor wafers

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2854226A (en) * 1955-03-28 1958-09-30 Surface Combustion Corp Annealing cover furnace with improved inner cover seal
US3460816A (en) * 1962-01-02 1969-08-12 Gen Electric Fluxless aluminum brazing furnace
US3293074A (en) * 1963-11-05 1966-12-20 Siemens Ag Method and apparatus for growing monocrystalline layers on monocrystalline substrates of semiconductor material
US3391270A (en) * 1965-07-27 1968-07-02 Monsanto Co Electric resistance heaters
US3492969A (en) * 1966-02-25 1970-02-03 Siemens Ag Apparatus for indiffusing impurity in semiconductor members
US3705567A (en) * 1970-07-06 1972-12-12 Siemens Ag Device for indiffussing dopants into semiconductor wafers
US3690290A (en) * 1971-04-29 1972-09-12 Motorola Inc Apparatus for providing epitaxial layers on a substrate

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4100310A (en) * 1975-01-20 1978-07-11 Hitachi, Ltd. Method of doping inpurities
US4023520A (en) * 1975-04-28 1977-05-17 Siemens Aktiengesellschaft Reaction container for deposition of elemental silicon
US4408563A (en) * 1978-08-09 1983-10-11 Leybold-Heraeus Gmbh Apparatus for regulating the evaporation rate of oxidizable substances in reactive vacuum deposition
US5327454A (en) * 1989-11-04 1994-07-05 Komatsu Electronic Metlas Co., Inc. Bridge for connecting cores in a manufacturing equipment of polycrystal silicon
US6482649B1 (en) 1997-07-29 2002-11-19 Leybold, Inficon, Inc. Acoustic consumption monitor
US20020153351A1 (en) * 1998-09-08 2002-10-24 Koji Harada Substrate processing method and substrate processing unit
US6402844B1 (en) * 1998-09-08 2002-06-11 Tokyo Electron Limited Substrate processing method and substrate processing unit
US6921554B2 (en) 1998-09-08 2005-07-26 Tokyo Electron Limited Substrate processing method
US6770144B2 (en) * 2000-07-25 2004-08-03 International Business Machines Corporation Multideposition SACVD reactor
US20050229853A1 (en) * 2000-07-25 2005-10-20 Patrick Raffin Multideposition SACVD reactor
US20040173312A1 (en) * 2001-09-06 2004-09-09 Kouji Shibayama Vacuum exhaust apparatus and drive method of vacuum apparatus
US7980003B2 (en) * 2006-01-25 2011-07-19 Tokyo Electron Limited Heat processing apparatus and heat processing method
US8782918B2 (en) 2006-01-25 2014-07-22 Tokyo Electron Limited Heat processing apparatus and heat processing method

Also Published As

Publication number Publication date
IT1046164B (it) 1980-06-30
BE817066R (fr) 1974-10-16
CA1055817A (en) 1979-06-05
JPS5090285A (ja) 1975-07-19
DK590174A (ja) 1975-07-28
JPS5523457B2 (ja) 1980-06-23
PL97254B4 (ja) 1978-02-28

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