US3918396A - Container for the production of semiconductor bodies - Google Patents

Container for the production of semiconductor bodies Download PDF

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Publication number
US3918396A
US3918396A US447721A US44772174A US3918396A US 3918396 A US3918396 A US 3918396A US 447721 A US447721 A US 447721A US 44772174 A US44772174 A US 44772174A US 3918396 A US3918396 A US 3918396A
Authority
US
United States
Prior art keywords
dome
gas
pressure
base plate
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US447721A
Other languages
English (en)
Inventor
Wolfgang Dietze
Herbert Sandmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of US3918396A publication Critical patent/US3918396A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/004—Sight-glasses therefor
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material

Definitions

  • Semiconductor material. in particular silicon. is depos- I ited onto heated carrier members from gaseous semiconductor compounds within a chamber formed by a glass or quartz dome and a base member. Breakage of the dome is avoided by a pressure chamber surrounding the glass dome.
  • the invention relates to the production of semiconductor bodies by the thermal decomposition of gaseous semiconductor compounds on heated surfaces of carri'er members.
  • Prior Art Reaction containers used for the deposition of semiconductor materials such as silicon from gaseous compounds onto heated carrier members are known in particular fromthe German Letters Patent 1' I98 787. They comprise a quartz or glass dome, nozzles for the supply and discharge of reaction gases as well as a plate-or disc-schap ed base member whereby the dome must be held air-tightly on the base member.
  • the carrier members are two parallel silicon rods which are arranged perpendicular to the base plate and which are mounted on the electrodes extending from the base plate. Their upper ends are conductively connected by a bridge made of silicon or graphite. An electric current is supplied through the electrodes, and it flows through both silicon rods or tubes and heats them to the requiredtemperature.
  • the base member consists of a temperature-resistant metal such as silver, whereby the surface which forms part of the reaction chamber is covered by quartz plates. It is also possible to replace the carrier rods by tubes or discs, exchange their material for graphite, and/or use a different manner of heating them. 7
  • the quartz dome is placed on a sealing ring made of air-tight, elastic material, and -a flange at its margin serves for clamping the dome onto the base member.
  • Clamping members or similar mounting members are usedfor this purpose, whereby a bettersealing effect is obtained by the use of a grease which is resistant to'high temperatures.
  • the invention improves on the prior-art reaction containers as described above in such a way that the glass or quartz dome is surrounded by a pressure chamber pressing the dome against the base member.
  • This pressure chamber is filled with a gas at a pressure higher than that of the surrounding atmosphere, and the dome is thus pressed air-tightly against its support by the forces exerted uniformly over the surface of the dome by the pressure gas, in addition to the weight of the dome. Nitrogen may be used as such a pressure gas.
  • FIGURE is a sectional view of a reaction container according to this invention DESCRIPTION OF THE PREFERRED EMBODIMENTS AND METHOD
  • the FIGURE is a preferred embodiment of a reaction container 10 according to this invention comprising perforated base member 12 and a silver plate 14 thereupon, provided with bores 16, 18 and 20 and a circular recess or groove 22.
  • the discharge channel 24 serves for removing the used gas from the reaction chamber through boring 20, and it contains a supply tube 26 with a valve for the fresh reaction gas compound. Borings l6 and I8 serve for mounting electrodes 30 and'32 gas-tightly in the silver plate 14.
  • Electrodes 30 and 32 constitute mounting members for two rod-shaped or tubular carrier members 34 and 36. Their upper ends are connected by a bridge 38 made of a temperature-resistant and electrically conductive material.
  • the carrier member or members are flat to form semiconductor layers, or the heating is carried out in a different manner.
  • the quartz or glass dome 9 of the embodiment in the figure has a flange-type margin 42 at its open end, and it rests upon the silver plate 14 at least partially covering the circular recess 22 which contains a sealing ring 44 consisting of a gas-tight, elastic and temperatureresistant material such as a fluorine containing elastomer, a silicon rubber or a sealing grease with the above properties.
  • a sealing ring 44 consisting of a gas-tight, elastic and temperatureresistant material such as a fluorine containing elastomer, a silicon rubber or a sealing grease with the above properties.
  • the flange 42 is removed or the dome 40 tapers off.
  • the dome and the silver plate 14 may also have mutually adapted contact surfaces, for instance, grindings, replacing any other sealing means.
  • a sealing ring may consist of an air-tight elastic and temperature-resistant material such as a flourine-containing elastomer or silicon rubber or a high-temperature-resistant sealing grease.
  • the dome 40 is arched in its closed portion to obtain a better pressure distribution.
  • the pressure container 46 holds the pressure gas. It surrounds the dome 40 and ismounted on the base member 12. It consists of steel or any material which can be easily handled without breakage.
  • This pressure container 46 contains an inlet port 48 for the pressure gas which is preferably an inert gas, in'particular nitrogen or a rare gas.
  • a manometer 50 allows to maintain a desired pressure in the pressure container 46.
  • a pressure-tight window 52 forms a further feature ensuring a perfect operation of the system.
  • the pressure difference between the outer and inner pressure of the glass or quartz dome 40 which is required for sufficient sealing depends strongly on the size (diameter) of the dome 40 and on the elasticity of the sealing ring 44 or its dimensions. Usually a pressure of 0.5 through I atmospheres should be sufficient.
  • the carrier members 34 and 36 are inserted into the mountings constituted by the electrodes 30 and 32 and are connected by the conductive bridge 38.
  • the glass dome 40 is then placed upon the silver plate 14 with the possible insertion of a sealing member 44.
  • the pressure-gas container 46 is closed and filled with the inert gas before the reaction gas is placed into the reaction chamber formed by the quartz or glass dome 40, and before the carrier members 34 and 36 are heated.
  • the pressure at this time is 0.5 through 2 atmospheres.
  • reaction gas for instance a mixture of H and SiHCl is admitted into the reaction chamber allowing the deposition of the semiconductor material on the hot surfaces of the heated carrier members 34 and 36. It is thereby advantageous to introduce the fresh reaction gas at such pressures into the reaction chamber that it will form a lively current reaching the upper parts of the reaction chamber.
  • the gas pressure on the outer surface of the glass or quartz dome 40, in particular on its upper side, will result in an air-tight connection with the base 14 without difficulty.
  • the pressure force K will be K p r (1r 3.1425634).
  • the total vertical force K is now K p r' rr G and the contact pressure due to the dome 40 is whereby r, is the outer radius of the lower dome margin and r is its inner radius. If r, r, and if G is negligibly small as compared with the force due to the pressure gas.
  • the expression for p will simply result in Since the two forces G and p producing the pressure P are uniformly distributed over all parts of the dome, the danger of uneven stresses on the dome 40 and thus of its breakage is avoided to a great extent. lf, in addition, the dome 40 is bent convexly, in particularly evenly, a perfectly stable construction can be obtained with less than 0.5 cm wall strength. The mechanical pressure which must exist at the boundary between base 14 and dome 40, and thus the desired air-tight connection, can be obtained much easier without the danger of damaging the dome 40.
  • a base plate having means to support at least one workpiece thereon, including means to heat the workpiece
  • gas inlet means connected to said outer container for introducing a gas under pressure into said pressure chamber defined by said dome and outer container

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
US447721A 1973-05-14 1974-03-04 Container for the production of semiconductor bodies Expired - Lifetime US3918396A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2324365A DE2324365C3 (de) 1973-05-14 1973-05-14 Reaktionsgefäß zum Abscheiden von Halbleitermaterial auf erhitzte Trägerkörper

Publications (1)

Publication Number Publication Date
US3918396A true US3918396A (en) 1975-11-11

Family

ID=5880921

Family Applications (1)

Application Number Title Priority Date Filing Date
US447721A Expired - Lifetime US3918396A (en) 1973-05-14 1974-03-04 Container for the production of semiconductor bodies

Country Status (6)

Country Link
US (1) US3918396A (ja)
JP (1) JPS5018363A (ja)
BE (1) BE806148A (ja)
DE (1) DE2324365C3 (ja)
IT (1) IT1012141B (ja)
PL (1) PL93312B1 (ja)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4018184A (en) * 1975-07-28 1977-04-19 Mitsubishi Denki Kabushiki Kaisha Apparatus for treatment of semiconductor wafer
US4023520A (en) * 1975-04-28 1977-05-17 Siemens Aktiengesellschaft Reaction container for deposition of elemental silicon
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber
US4179530A (en) * 1977-05-20 1979-12-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the deposition of pure semiconductor material
US4539933A (en) * 1983-08-31 1985-09-10 Anicon, Inc. Chemical vapor deposition apparatus
US4673799A (en) * 1985-03-01 1987-06-16 Focus Semiconductor Systems, Inc. Fluidized bed heater for semiconductor processing
US4805556A (en) * 1988-01-15 1989-02-21 Union Carbide Corporation Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane
US5382419A (en) * 1992-09-28 1995-01-17 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5478396A (en) * 1992-09-28 1995-12-26 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
EP0781594A1 (de) * 1995-12-29 1997-07-02 Glatt Gmbh Wandung, die mindestens ein Fenster mit mindestens einer Glasscheibe besitzt
US20100269754A1 (en) * 2009-04-28 2010-10-28 Mitsubishi Materials Corporation Polycrystalline silicon reactor
US20110031115A1 (en) * 2008-04-14 2011-02-10 David Hillabrand Manufacturing Apparatus For Depositing A Material On An Electrode For Use Therein
US20110036292A1 (en) * 2008-04-14 2011-02-17 Max Dehtiar Manufacturing Apparatus For Depositing A Material And An Electrode For Use Therein
US20110036294A1 (en) * 2008-04-14 2011-02-17 David Hillabrand Manufacturing Apparatus For Depositing A Material And An Electrode For Use Therein
US20110129621A1 (en) * 2008-03-26 2011-06-02 Gt Solar, Incorporated Systems and methods for distributing gas in a chemical vapor deposition reactor
US20110159214A1 (en) * 2008-03-26 2011-06-30 Gt Solar, Incorporated Gold-coated polysilicon reactor system and method
WO2013012422A1 (en) * 2011-07-20 2013-01-24 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material on a carrier body
EP2636767A1 (de) * 2012-03-08 2013-09-11 SilConTec GmbH Laborreaktor

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4898110U (ja) * 1972-02-19 1973-11-20
JPS5277727U (ja) * 1975-12-06 1977-06-10
JPS5447411U (ja) * 1977-09-08 1979-04-02
DE2826860C2 (de) * 1978-06-19 1987-04-16 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Abscheiden von Halbleitermaterial
JPS61246370A (ja) * 1985-04-23 1986-11-01 Sakaguchi Dennetsu Kk 気相化学反応炉
KR890002965B1 (ko) * 1986-12-01 1989-08-14 재단법인 한국화학연구소 고순도 반도체 규소박판을 이용한 고순도 반도체 재료인 규소의 제조방법 및 장치

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2854226A (en) * 1955-03-28 1958-09-30 Surface Combustion Corp Annealing cover furnace with improved inner cover seal
US3293074A (en) * 1963-11-05 1966-12-20 Siemens Ag Method and apparatus for growing monocrystalline layers on monocrystalline substrates of semiconductor material
US3391270A (en) * 1965-07-27 1968-07-02 Monsanto Co Electric resistance heaters
US3460816A (en) * 1962-01-02 1969-08-12 Gen Electric Fluxless aluminum brazing furnace
US3492969A (en) * 1966-02-25 1970-02-03 Siemens Ag Apparatus for indiffusing impurity in semiconductor members
US3690290A (en) * 1971-04-29 1972-09-12 Motorola Inc Apparatus for providing epitaxial layers on a substrate
US3705567A (en) * 1970-07-06 1972-12-12 Siemens Ag Device for indiffussing dopants into semiconductor wafers

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3913738A (en) * 1973-05-03 1975-10-21 Illinois Tool Works Multi container package and carrier

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2854226A (en) * 1955-03-28 1958-09-30 Surface Combustion Corp Annealing cover furnace with improved inner cover seal
US3460816A (en) * 1962-01-02 1969-08-12 Gen Electric Fluxless aluminum brazing furnace
US3293074A (en) * 1963-11-05 1966-12-20 Siemens Ag Method and apparatus for growing monocrystalline layers on monocrystalline substrates of semiconductor material
US3391270A (en) * 1965-07-27 1968-07-02 Monsanto Co Electric resistance heaters
US3492969A (en) * 1966-02-25 1970-02-03 Siemens Ag Apparatus for indiffusing impurity in semiconductor members
US3705567A (en) * 1970-07-06 1972-12-12 Siemens Ag Device for indiffussing dopants into semiconductor wafers
US3690290A (en) * 1971-04-29 1972-09-12 Motorola Inc Apparatus for providing epitaxial layers on a substrate

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4023520A (en) * 1975-04-28 1977-05-17 Siemens Aktiengesellschaft Reaction container for deposition of elemental silicon
US4018184A (en) * 1975-07-28 1977-04-19 Mitsubishi Denki Kabushiki Kaisha Apparatus for treatment of semiconductor wafer
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber
US4179530A (en) * 1977-05-20 1979-12-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the deposition of pure semiconductor material
US4539933A (en) * 1983-08-31 1985-09-10 Anicon, Inc. Chemical vapor deposition apparatus
AU572883B2 (en) * 1983-08-31 1988-05-19 Silicon Valley Group, Inc. Chemical vapour deposition
US4673799A (en) * 1985-03-01 1987-06-16 Focus Semiconductor Systems, Inc. Fluidized bed heater for semiconductor processing
US4805556A (en) * 1988-01-15 1989-02-21 Union Carbide Corporation Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane
USRE36936E (en) * 1992-09-28 2000-10-31 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5545387A (en) * 1992-09-28 1996-08-13 Advanced Silcon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5382419A (en) * 1992-09-28 1995-01-17 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5478396A (en) * 1992-09-28 1995-12-26 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
EP0781594A1 (de) * 1995-12-29 1997-07-02 Glatt Gmbh Wandung, die mindestens ein Fenster mit mindestens einer Glasscheibe besitzt
US20110129621A1 (en) * 2008-03-26 2011-06-02 Gt Solar, Incorporated Systems and methods for distributing gas in a chemical vapor deposition reactor
US20110159214A1 (en) * 2008-03-26 2011-06-30 Gt Solar, Incorporated Gold-coated polysilicon reactor system and method
US8961689B2 (en) * 2008-03-26 2015-02-24 Gtat Corporation Systems and methods for distributing gas in a chemical vapor deposition reactor
US8784565B2 (en) 2008-04-14 2014-07-22 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
US20110031115A1 (en) * 2008-04-14 2011-02-10 David Hillabrand Manufacturing Apparatus For Depositing A Material On An Electrode For Use Therein
US20110036292A1 (en) * 2008-04-14 2011-02-17 Max Dehtiar Manufacturing Apparatus For Depositing A Material And An Electrode For Use Therein
US20110036294A1 (en) * 2008-04-14 2011-02-17 David Hillabrand Manufacturing Apparatus For Depositing A Material And An Electrode For Use Therein
US8951352B2 (en) 2008-04-14 2015-02-10 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
US20100269754A1 (en) * 2009-04-28 2010-10-28 Mitsubishi Materials Corporation Polycrystalline silicon reactor
US8540818B2 (en) * 2009-04-28 2013-09-24 Mitsubishi Materials Corporation Polycrystalline silicon reactor
CN103764560A (zh) * 2011-07-20 2014-04-30 赫姆洛克半导体公司 用于将材料沉积到承载体上的制备装置
WO2013012422A1 (en) * 2011-07-20 2013-01-24 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material on a carrier body
EP2636767A1 (de) * 2012-03-08 2013-09-11 SilConTec GmbH Laborreaktor

Also Published As

Publication number Publication date
IT1012141B (it) 1977-03-10
BE806148A (fr) 1974-02-15
DE2324365C3 (de) 1978-05-11
PL93312B1 (ja) 1977-05-30
DE2324365B2 (de) 1977-09-08
JPS5018363A (ja) 1975-02-26
DE2324365A1 (de) 1974-12-05

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