IT1012141B - Recipiente di reazione per deposi tare materiale semiconduttore su corpi di supporto riscaldati - Google Patents

Recipiente di reazione per deposi tare materiale semiconduttore su corpi di supporto riscaldati

Info

Publication number
IT1012141B
IT1012141B IT22415/74A IT2241574A IT1012141B IT 1012141 B IT1012141 B IT 1012141B IT 22415/74 A IT22415/74 A IT 22415/74A IT 2241574 A IT2241574 A IT 2241574A IT 1012141 B IT1012141 B IT 1012141B
Authority
IT
Italy
Prior art keywords
storing
reaction vessel
semiconductive material
support bodies
heated support
Prior art date
Application number
IT22415/74A
Other languages
English (en)
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1012141B publication Critical patent/IT1012141B/it

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/004—Sight-glasses therefor
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT22415/74A 1973-05-14 1974-05-08 Recipiente di reazione per deposi tare materiale semiconduttore su corpi di supporto riscaldati IT1012141B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2324365A DE2324365C3 (de) 1973-05-14 1973-05-14 Reaktionsgefäß zum Abscheiden von Halbleitermaterial auf erhitzte Trägerkörper

Publications (1)

Publication Number Publication Date
IT1012141B true IT1012141B (it) 1977-03-10

Family

ID=5880921

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22415/74A IT1012141B (it) 1973-05-14 1974-05-08 Recipiente di reazione per deposi tare materiale semiconduttore su corpi di supporto riscaldati

Country Status (6)

Country Link
US (1) US3918396A (ja)
JP (1) JPS5018363A (ja)
BE (1) BE806148A (ja)
DE (1) DE2324365C3 (ja)
IT (1) IT1012141B (ja)
PL (1) PL93312B1 (ja)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4898110U (ja) * 1972-02-19 1973-11-20
DE2518853C3 (de) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas
US4018184A (en) * 1975-07-28 1977-04-19 Mitsubishi Denki Kabushiki Kaisha Apparatus for treatment of semiconductor wafer
JPS5277727U (ja) * 1975-12-06 1977-06-10
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber
US4179530A (en) * 1977-05-20 1979-12-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the deposition of pure semiconductor material
JPS5447411U (ja) * 1977-09-08 1979-04-02
DE2826860A1 (de) * 1978-06-19 1980-01-03 Siemens Ag Vorrichtung zum abscheiden von halbleitermaterial
US4539933A (en) * 1983-08-31 1985-09-10 Anicon, Inc. Chemical vapor deposition apparatus
US4673799A (en) * 1985-03-01 1987-06-16 Focus Semiconductor Systems, Inc. Fluidized bed heater for semiconductor processing
JPS61246370A (ja) * 1985-04-23 1986-11-01 Sakaguchi Dennetsu Kk 気相化学反応炉
KR890002965B1 (ko) * 1986-12-01 1989-08-14 재단법인 한국화학연구소 고순도 반도체 규소박판을 이용한 고순도 반도체 재료인 규소의 제조방법 및 장치
US4805556A (en) * 1988-01-15 1989-02-21 Union Carbide Corporation Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane
US5382419A (en) * 1992-09-28 1995-01-17 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5478396A (en) * 1992-09-28 1995-12-26 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
DE59609007D1 (de) * 1995-12-29 2002-05-08 Glatt Gmbh Wandung, die mindestens ein Fenster mit mindestens einer Glasscheibe besitzt
CN102027156A (zh) * 2008-03-26 2011-04-20 Gt太阳能公司 在化学气相沉积反应器中用于配气的系统和方法
RU2010143546A (ru) * 2008-03-26 2012-05-10 ДжиТи СОЛАР, ИНКОРПОРЕЙТЕД (US) Реакторная система с золотым покрытием для осаждения поликристаллического кремния и способ
EP2266369B1 (en) * 2008-04-14 2017-11-22 Hemlock Semiconductor Operations LLC Manufacturing apparatus for depositing a material and an electrode for use therein
EP2265883A1 (en) * 2008-04-14 2010-12-29 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
AU2009236678B2 (en) * 2008-04-14 2014-02-27 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material on an electrode for use therein
JP5477145B2 (ja) * 2009-04-28 2014-04-23 三菱マテリアル株式会社 多結晶シリコン反応炉
JP5834140B2 (ja) * 2011-07-20 2015-12-16 ヘムロック・セミコンダクター・コーポレーション 材料を担体上に蒸着するための製造装置
DE202012100839U1 (de) * 2012-03-08 2012-06-22 Silcontec Gmbh Laborreaktor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2854226A (en) * 1955-03-28 1958-09-30 Surface Combustion Corp Annealing cover furnace with improved inner cover seal
US3460816A (en) * 1962-01-02 1969-08-12 Gen Electric Fluxless aluminum brazing furnace
DE1244733B (de) * 1963-11-05 1967-07-20 Siemens Ag Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern
US3391270A (en) * 1965-07-27 1968-07-02 Monsanto Co Electric resistance heaters
DE1521494B1 (de) * 1966-02-25 1970-11-26 Siemens Ag Vorrichtung zum Eindiffundieren von Fremdstoffen in Halbleiterkoerper
DE2033444C3 (de) * 1970-07-06 1979-02-15 Siemens Ag Vorrichtung zum Eindiffundieren von Dotierstoffen in Scheiben aus Halbleitermaterial
US3690290A (en) * 1971-04-29 1972-09-12 Motorola Inc Apparatus for providing epitaxial layers on a substrate
US3913738A (en) * 1973-05-03 1975-10-21 Illinois Tool Works Multi container package and carrier

Also Published As

Publication number Publication date
PL93312B1 (ja) 1977-05-30
JPS5018363A (ja) 1975-02-26
DE2324365B2 (de) 1977-09-08
US3918396A (en) 1975-11-11
DE2324365A1 (de) 1974-12-05
BE806148A (fr) 1974-02-15
DE2324365C3 (de) 1978-05-11

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