US3876883A - Method and system for focusing and registration in electron beam projection microfabrication - Google Patents
Method and system for focusing and registration in electron beam projection microfabrication Download PDFInfo
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- US3876883A US3876883A US429438A US42943873A US3876883A US 3876883 A US3876883 A US 3876883A US 429438 A US429438 A US 429438A US 42943873 A US42943873 A US 42943873A US 3876883 A US3876883 A US 3876883A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3005—Observing the objects or the point of impact on the object
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/21—Means for adjusting the focus
Definitions
- ABSTRACT A method and system for improved focusing and registration in an electron beam device including an electron beam source, condenser lenses, deflection coils,
- FIG.7B FIG. 70
- FIG. 9A is a diagrammatic representation of FIG. 9A
- the present invention relates to electron optical projection systems for microfabrication and methods of focusing and registration therefor, and use thereof.
- a distinction of the present invention over the prior art is the provision of a registration hole in a mask and a registration mark on a target which is used in combination with a deflection coil for providing radiation focused to form an image of the hole upon the registration mark on the target and employing such registration in an electron beam projection system to prepare for exposure of the entire target.
- US Pat. No. 3,118,050 issued to J. S. Hetherington Jan. 14, 1964 shows an electron beam system with a microfabrication target and without a beam deflection system.
- the source of electrons passes through a single variable focus condenser or collimating type of magnetic lens.
- the lens floods the beam at once over all of the area of a projection mask having fiducial notches in the edge thereof through which rays of the electron beam may pass.
- the condenser type lens has an adjustable D.C. supply connected to opposite ends of the coil, which apparently can be adjusted to collimate the electrons passing through the lens.
- a focusing system including a pair of magnetic lenses is located between the mask and the work piece holder. The focusing lenses are also connected to adjustable D.C. supplies.
- the holder includes spaces for workpieces, and around the periphery of such spaces are fiducial notches each containing a terminal insulated from the holder.
- a balanced pair comparator circuit is employed to help to register the holder, while the holder is moved by adjusting of micrometer screws, until the balanced pair indicates proper positioning.
- the only means for viewing the position of the work holder and work is through a binocular microscope.
- the balanced pair and the binocular microscope are totally independent means for measuring the position of the holder via the balanced pair and the work as well, via the optical microscope.
- An object of the present invention is an improvement to an electrorioptical projection system wherein a projection pattern is focused and accurately registered on an unexposed wafer.
- Another object of the present invention is to provide an electron beam projection system including a set of deflection coils located proximate to condenser lenses to focus and deflect the electron beam onto registration marks.
- FIG. 1 shows in a schematic manner the imaging portion of an electron beam column for optical projection and control circuits therefore in accordance with the principles of the present invention.
- FIG. 2 is an illustration of superimposed registration images for the cases where the marks and thereby their images are similarand dissimilar.
- FIG. 3 is a plan view of a mask for an electron beam projection microfabrication system.
- FIG. 4 is a video display of a semiconductor wafer target registration mark with a shadow of a registration grid projected by the electron beam from a mask, with both images out of focus.
- FIG. 5 is a view similar to FIG. 4 with the shadow grid in focus.
- FIG. 6 is a view similar to FIG. 5 with the wafer also in focus.
- FIG. 7 (A-D) is a set of video displays of projections of four registration windows in a mask upon a single wafer where excessive scale causes a mismatch of registration.
- FIG. 8 (A-D) is a set of video displays of the marks in FIG. 7 (A-D) after the scale has been readjusted, by reducing magnification in the projection system.
- FIG. 9 (A-D) is a set of video displays of the marks in FIG. 8 (A-D) after registration has been realigned.
- the function of the condenser lens system is to illuminate the projection mask and then collect all the electron beams passing through the mask and focus them into the entrance pupil of the projection lens system.
- FIG. 1 An embodiment of the present invention is shown schematically in FIG. 1.
- the structure of FIG. 1 is capable of illuminating a suitable projection mask with electrons and imaging the mask onto a semiconductor target wafer to fabricate a microcircuit in a manner described in the prior art.
- FIG. 1 an additional mode of operation is shown and will be described wherein the electron beam optics can be operated in a scanning and in a preliminary focusing and registration mode, as well.
- an electron beam tube microcircuit fabrication structure 24 is shown in the focusing and registration mode, also referred to as the probe mode.
- the structure 24 evacuated to about Torr includes a conventional electron beam gun 28 of about KV which produces beams of electrons, for example, from a tungsten cathode.
- the electron beam is directed through blanking electrodes 25, 26 aperture 27 a first magnetic condenser lens 30 powered by adjustable constant current power supply 70 and a second magnetic condenser lens 32 powered by adjustable constant current power supply 71 which lenses focus the electron beam.
- a set of orthogonal X deflection coils 34 and Y deflection coils 36 are positioned in a plane which is an image of aperture 44 through lenses 38 and 42.
- the condenser lens system is readjusted to provide a pinpoint focus upon mask 40.
- the deflection coils 34 and 36 are energized by waveforms adapted to cause the electron beam to be directed through the final condenser lens 38 in such a direction that the electron beam is focused at a specific location on projection mask 40 at which there is located a unique registration pattern in the form of a hole 41 of a selected configuration.
- the projection mask is usually a transparent substrate on which the desired circuit is graphically layed out using light opaque material.
- the projection mask such as 40 in FIG. 1 and FIG. '3 with circuit apertures 39 and registration mark apertures 41 can be analogous to light optics.
- the mask is preferably a photolithographically manufactured very thin (0.2 mil thick) selfsupporting, electro-formed grid, or pattern of copper gold or nickel which forms the electron opaque sections where desired. The grid is formed on a substrate and then lifted off it to produce the self-supporting foil.
- the electron beam is to pass through the openings in the mask and impinge on the target wafer thereby exposing the upper surface of the target wafer, which may be silicon or silicon oxide coated with an electron sensitive resist, with the desired circuit pattern.
- the target wafer which may be silicon or silicon oxide coated with an electron sensitive resist, with the desired circuit pattern.
- it may be a cathode mask such as described in the aforementioned reference of OKeeffe et al. where now the mask itself is the source of electrons for the projec tion mode of operation.
- the mask 40 is rotatably mounted to be turned by worm gear 78.
- the deflection coils (or plates) 34 and 36 are provided to deflect the electron beam over the mask 40 and wafer 48 when a deflection current (or voltage) is applied to the coils.
- the value of the deflection current is a function of the type of deflection coils employed, the geometry of the projection system and the design of the magnetic lenses. This will vary from system to system and the deflection current in a given system can be determined by one having ordinary skill in electron beam technology.
- one or two sets of orthogonal coils may be positioned above, within or after the lens 38 previous to the mask such that the direction of the principal ray of the spot focused at the mask plane is such that the ray passes through the center of the effective entrance pupil of the projection optics.
- the lens 38 previous to the mask focuses the electron beam at the plane of the mask.
- the focused spot which is smaller than any dimension of the registration mark is scanned by the coils 34 and 36 over a registration hole configuration 41 in the mask 40.
- This may be any of the three types of mask described except that when the cathode mask is used, the accelerating electrostatic potential of the electron gun 28 is thesame as the electrostatic potential of the cathode mask.
- the focused beam that passes through the registration hole 41 then passes on through the projection optics, which consists of the projection lens 42 powered by constant current power supply 73, aperture 44 shifting deflection coils 79 and 80 associated with aperture 44 powered by variable supplies 74, for shifting the focus point transversely a small amount and final projection lens 46 powered by variable supply 76, and onto the target wafer 48 where another registration mark is located.
- the projection mask 40 and target wafer 48 are in alignment when the images of the registration marks on the wafer surface are superimposed with the shadow images 41 in FIG. 2 of the registration mark mask openings 41.
- a signal which may take the form of backscattered electrons detected by the electron detector 50, is amplified and displayed by a video display 52 scanned in synchronism with the deflection coils 34 and 36.
- the scanning system includes X generator 55 and Y generator 54, which respectively drive X and Y amplitude and variable offset control units 56 and 58 having X and Y control knobs 62 and 64 respectively for amplitude which are shown mechanically ganged by line 93 for display magnification control and X and Y offset control knobs 63 and 65 respectively.
- Outputs are provided from X and Y units 56 and 58 to X and Y current amplifiers 57 and 59 connected to coils 34 and 36 respectively.
- Electron detector 50 comprises an electron scintillator receiving electrons 66 and a light pipe connecting the scintillator to a photo multiplier 51 which drives video amplifier 53 to control the intensity of video display 52.
- Knobs 62, 63, 64 and 65 make it possible for the beam to be adjusted to scan certain portions of the large mask 40 shown in cross section by reducing the amplitude, or the entire mask 40 and all apertures therein with larger amplitude control settings.
- the zero offset can be used to adjust the beam location for work in any given small area when a small amplitude signal is applied.
- the signal may be detected by any of the methods known to those skilled in the art of scanning electron microscopy.
- video display 52 will produce two superimposed images one of the surface of target wafer 48 with the registration mark and any other surface feature perfectly focused.
- the second image will be a shadow image of mask 40 due to the chopping of the electron beams in the mask plane by the mask itself.
- the projection optics shown in FIG. I remain the same in both the pro jection mode and the focusing mode as shown, the correspondence between the two superimposed video images is the same as between the mask and its projected image except that dimensions appearing the same in both video images are in fact related by the projection magnification.
- Alignment of mask 40 to target wafer 48 is achieved with reference to FIG. 2 by using registration patterns 41 or 41A in mask 40 and shaped marks 43 on target wafer 48 which may. but need not be similar in shape to the holes in the mask.
- FIG. 2 shows examples of a similar hole pattern 41 and mark 43 and a dissimilar hole pattern 141' and mark 143, both examples being shown superimposed to indicate mask and wafer alignment.
- Registration of mask and wafer is complete when the video output shows the images of both marks superimposed as shown in FIG. 2 for all registration points on the object.
- the ultimate limit on the accuracy of registration is determined by the size of the electron beam probe in the image plane, which itself is only limited by the edge resolution in the projection optics.
- any displacement in the mask from its appropriate conjugate plane results in a defocusing of the mask shadow image.
- displacement of the wafer results in a defocusing of the wafer image.
- the wafer 48 and the mask 40 can be focused one to the other as appropriate and also the two can be accurately registered.
- the mask and wafer planes must be conjugate with respect to projection lenses 42 and 46 (i.e. the mask and wafer are in focus on the video display because the scanning beam is in focus as it reaches each of those planes.)
- the demagnification of the projection system must be maintained to a very high degree of accuracy.
- the mask and wafer must be aligned in both X and Y translations and rotation.
- FIGS. 4-9 (D) show video displays with a mesh grid alignment mask and a cross marked on the substrate in various stages of adjustment. The image of the mesh grid is superposed upon the image of the cross on the wafer plane.
- Step (la) is to adjust the current to condenser coil 38 until the mask grid image in FIG. 4 is in focus as in FIG. 5.
- Step (lb) is to adjust current in projection coil 46 to focus the larger image of the wafer marking 96 as in FIG. 6.
- the next step is to adjust current to the demagnification coils 42 and 46 from power supply units 73 and 76, so that the grid image remains focussed but the display shows similar relative positioning of all marks. Since the mark projections 41A',41B,41C and 41D are widely spaced on the projection onto the wafer the scale can be adjusted to an extremely high order of accuracy. Of course, the scan of the coils 34 and 36 must look at each one of those registration patterns alone without scanning the intermediate areas. A problem has arisen as shown in FIG. 8 (AD) in the course of demagnification, since marks 96A and 41A are no longer aligned correctly because as the whole pattern shrank, for example, 96A moved up away from 96D while 96D moved towards 96A and a correct position.
- AD A problem has arisen as shown in FIG. 8
- Alignment The alignment of the mask image and wafer can be adjusted in X, Y and rotation.
- the rotation is handled mechanically either by turning worm gear 78 attached to the support for mask 40 or by worm 91 attached to turn the table 92 supporting wafer 48.
- the work is in position ready for exposure of the work through the mask and now the electron beam can expose the work piece in the desired kind ofa way by flooding or scanning as de sired through the mask.
- the registration marks 43 on the wafer are made initially, with an extra thickness layer if required to prevent subsequent operationssuch as etching from removing them, as for example where photo resist is being developed to provide windows for etching, which windows would expose the marks for etching also. See Hatzakis U.S. Pat. No. 3,519,788.
- the probe mode of operation as shown in FIG. 1 can be used to determine if any aberrations exist in the projection optics.
- the relative difference in definition of the wafer surface features and the shadow image across the field of view gives an indication of the defocusing effect of coma, astigmatism and field curvature in the projection optics.
- comparing the distortion of the shadow image, if any exists, with that of the surface features of the wafer can yield the projection distortion coefficient.
- a signal on line 97 or 98 respectively operates blanking amplifier 90 via line 99 to operate blanking electrodes to deflect the electron beam away from the aperture in aperture 27.
- Amplifier 90 can be operated manually also for timing of exposures in projection mode.
- the structure is not necessarily limited to that shown in the drawings.
- the final condenser lens and the first projection lens can be merged into one single field lens with the mask situated in the center of the focusing field.
- all other operations in the probe mode are similar to those described.
- the required size of the intermediate source image (after second condenser lens 32) in the projection and the probe modes will be different.
- the changes in strength of the first and second condenser lenses will be required when switching form one mode to the other. Again, the changes in lens strengths are within the skill of workers in electron beam technology.
- a method for operating an electron beam wafer exposure system including a target whose position is adjustable, a source of an electron beam, a projection mask for said target having a registration hole therein, means for focusing said beam on said mask, means for scanning said focused beam across said mask, means for projecting radiation from said beam in the image form through said mask onto said target, means for sensing beam radiation projected onto said target, means for displaying a scanned input connected to receive the output of said means for sensing for display, means for providing scanning signals having outputs connected to drive said means for scanning and said means for displaying in synchronism, wher'eby radiation projected onto said target through said mask is displayed upon said display, said target having a registration mark thereon, the steps comprising focusing said beam substantially only upon said registration hole in said mask, viewing said display, adjusting the position of said target until the display shows that said beam is focused upon said hole, and then broadening the focus of said beam to cover substantially all of said mask.
- an electron beam projection system including a source of an electron beam, a projection mask having a unique pattern of registration electron beam windows therein, an adjustable focal length condenser lens system located between said electron source and said projection mask including electron lenses for collecting said electron beam from said source and directing said beam onto said projection mask, a target wafer having a unique registration marks on the surface thereof, a projection lens system located between said projection mask and said target wafer for collecting electron beams passing through said projection mask and directing them onto said target wafer, a deflection system located between said source and said mask for scanning said electron beam across said mask, said deflection system cooperating with said condenser lens system to scan the focus of said electron beam across the plane of said projection mask at one of said registration windows and said projection lens system operating to focus the portion of said electron beam passing through a said window in said mask onto the surface of said target wafer, and electronic detection means for sensing the image projected through said mask onto said wafer, the improvement comprising, focusing said electron beam into a pencil
- a method for operating an electron beam wafer exposure system including a target whose position is adjustable, a source of an electron beam, a projection mask for said target having plural widely spaced registration holes therein, first means for focusing said beam on said mask, means for scanning said focused beam across said mask, means for projecting radiation from said beam in the image form through said mask onto aaid target, means for sensing beam radiation projected onto said target, means for displaying a scanned input connected to receive the output of said means for sensing for display, means for providing scanning signals having outputs connected to drive said means for scanning and said means for displaying in synchronism, whereby radiation projected onto said target through said mask is displayed upon said display, said target having a registration mark thereon, the steps comprising focusing said beam substantially only upon said registration holes in said mask, viewing said display.
- a focusing and registration system for an electron beam projection system comprising:
- a condenser lens system located between said electron source and said projection mask including electron lenses for collecting said electron beam from said source and focusing said beam onto a point on said projection mask,
- a projection lens system located between said projection mask and said target wafer for collecting electron beams passing through said projection mask and directing them onto said target wafer
- a deflection system located between said source and said mask for scanning said electron beam across said mask, said deflection system cooperating with said condenser lens system to scan the focus of said electron beam across the plane of said projection mask at one of said registration windows and said projection lens system operating to focus the portion of said electron beam passing through a regis tration window in said mask onto the surface of said target wafer,
- a focusing and registration system according to claim 5 wherein said projection mask has holes therein in a predetermined pattern, one of said holes being a unique registration hole.
- a focusing and registration system further including a projection aperture located in said projection lens system and where a first and second pair of deflection elements are located in said condenser lens system in a plane conjugate to the plane of said projection aperture through all projection lenses between 'said aperture and said mask and at least one condenser lens.
- said detection means is an electron detector responsive to electrons scattered from the surface of or collected by said target wafer.
- a focusing and registration system according to claim 5 wherein said condenser lens system includes a first magnetic condenser lens, a second condenser lens and a final condenser lens and wherein said deflection system is located between said second condenser lens and said final condenser lens.
- a focusing and registration system includes a first magnetic projection lens and a final magnetic projection lens, said aperture being located between said first and final projection lenses and said projection mask being located between said condenser lens system and said first projection lens.
- a focusing and registration system according to claim 5 wherein said first and. second pair of deflection elements are first and second deflection coils arranged orthogonally with respect to each other.
- a focusing and registration system according to claim 6 wherein said registration hole in said projection mask and said registration mark on said target wafer have the same geometrical shapes.
- said electron detection means includes an electron detector responsive to electrons from the surface of said target wafer and a video display means connected to said electron detector for visually displaying the projected image of said registration window in said projection mask on said target wafer and the image of said registration mark on the surface of said target wafer.
- a focusing system for an electron beam projection system comprising:
- a condenser lens system located between said electron source and said projection mask including an electron lens for collecting said electron beam from said source and focusing said beam onto a point on said projection mask,
- a projection lens system including at least one lens and an aperture located between said projection mask and said target for collecting the portion of said electron beam passing through said projection mask and directing it onto said target,
- a deflection system for scanning said electron beam across said mask, including deflection elements located between said source and said projection mask, said deflection system cooperating with said condenser lens system to scan the focus of said electron beam across the plane of said projection mask across at least one of said windows and said projection lens system operating to focus said elec tron beam passing through said window in said mask onto a point on the surface of said target.
- a focusing and registration system for an electron beam electrical circuit manufacturing system comprisa source of an electron beam
- a condenser lens system located between said electron source and said projection mask including electron lenses for collecting said electron beam from said source and focusing said beam onto a point on said projection mask,
- a projection lens system including at least one lens and an aperture located between said projection mask and said target wafer for collecting said electron beam passing through said projection mask and directing said beam onto said target material
- a deflection system for scanning said electron beam across said mask located in said condenser lens system in a plane conjugate to the plane of said aperture through all projection lenses between said aperture and said mask and at least one condenser lens, said deflection system cooperating with said condenser lens system to focus and scan said electron beam in the plane of said projection mask across at least one of said registration windows and operating with said projection lens system to focus the portion of said electron beam passing through said window in said mask onto a point on the surface of said target material.
- An electron beam wafer exposure system including,
- an electron beam projection system including a source of an electron beam, a projection mask having a unique pattern of registration electron beam windows therein, an adjustable focal length condenser lens system located between said electron source and said projection mask including electron lenses for collecting said electron beam from said source and directing said beam onto said projection mask, a target wafer having a unique registration mark on the surface thereof, a projection lens system located between said projection mask and said target wafer for collecting electron beams passing through said projection mask and directing them onto said target wafer, a deflection system located between said source and said mask for scanning said electron beam across said mask, said deflection system cooperating with said condenser lens system to scan the focus of said electron beam across the plane of said projection mask at one of said registration windows and said projection lens system operating to focus the portion of said electron beam passing through a said window in said mask onto the surface of said target wafer, and electronic detection means for sensing the image projected through said mask onto said wafer, the improvement comprising, focusing said electron beam into a pencil
- adjusting power to said projection lens system to focus the image of said target wafer upon said display adjusting the scale of the projection of said mask shown upon said display to match the spacing of the images of said registration windows with corresponding registration marks upon said target as shown upon said display; adjusting the alignment of the projection through of said windows upon said marks; and then changing the focus of said condenser lens system to adjust said beam to flood said projection mask and to project through all of the windows therein upon said target wafer.
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- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR39852D FR39852E (fr) | 1972-06-30 | 1931-03-09 | Procédé de production de colorants solides pour cuve |
GB1483473A GB1416077A (en) | 1972-06-30 | 1973-03-28 | Electron beam apparatus |
FR7321785A FR2191263B1 (pt) | 1972-06-30 | 1973-07-06 | |
DE2332091A DE2332091C2 (de) | 1972-06-30 | 1973-07-23 | Verfahren zum Betrieb einer fokussierbaren und ausrichtbaren Elektronenstrahlprojektionsvorrichtung und dafür bestimmte Elektronenstrahlprojektionsvorrichtung |
US429438A US3876883A (en) | 1972-06-30 | 1973-12-28 | Method and system for focusing and registration in electron beam projection microfabrication |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26784472A | 1972-06-30 | 1972-06-30 | |
GB1483473A GB1416077A (en) | 1972-06-30 | 1973-03-28 | Electron beam apparatus |
JP6208073A JPS4964097A (pt) | 1972-06-30 | 1973-06-04 | |
FR7321785A FR2191263B1 (pt) | 1972-06-30 | 1973-07-06 | |
DE2332091A DE2332091C2 (de) | 1972-06-30 | 1973-07-23 | Verfahren zum Betrieb einer fokussierbaren und ausrichtbaren Elektronenstrahlprojektionsvorrichtung und dafür bestimmte Elektronenstrahlprojektionsvorrichtung |
US429438A US3876883A (en) | 1972-06-30 | 1973-12-28 | Method and system for focusing and registration in electron beam projection microfabrication |
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US3876883A true US3876883A (en) | 1975-04-08 |
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US429438A Expired - Lifetime US3876883A (en) | 1972-06-30 | 1973-12-28 | Method and system for focusing and registration in electron beam projection microfabrication |
Country Status (4)
Country | Link |
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US (1) | US3876883A (pt) |
DE (1) | DE2332091C2 (pt) |
FR (2) | FR39852E (pt) |
GB (1) | GB1416077A (pt) |
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US6146910A (en) * | 1999-02-02 | 2000-11-14 | The United States Of America, As Represented By The Secretary Of Commerce | Target configuration and method for extraction of overlay vectors from targets having concealed features |
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US6657211B2 (en) | 2000-07-14 | 2003-12-02 | Leo Elektronenmikroskopie | Process for electron beam lithography, and electron-optical lithography system |
US20040121069A1 (en) * | 2002-08-08 | 2004-06-24 | Ferranti David C. | Repairing defects on photomasks using a charged particle beam and topographical data from a scanning probe microscope |
US6770867B2 (en) | 2001-06-29 | 2004-08-03 | Fei Company | Method and apparatus for scanned instrument calibration |
US20080017845A1 (en) * | 2004-05-25 | 2008-01-24 | The Trustees Of The University Of Pennsylvania | Nanostructure Assemblies, Methods And Devices Thereof |
US7332729B1 (en) * | 2004-06-18 | 2008-02-19 | Novelx, Inc. | System and method for multiple electron, ion, and photon beam alignment |
US7893697B2 (en) | 2006-02-21 | 2011-02-22 | Cyberoptics Semiconductor, Inc. | Capacitive distance sensing in semiconductor processing tools |
US8823933B2 (en) | 2006-09-29 | 2014-09-02 | Cyberoptics Corporation | Substrate-like particle sensor |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS588130B2 (ja) * | 1978-05-08 | 1983-02-14 | ロツクウエル インタ−ナシヨナル コ−ポレ−シヨン | 高分解能の微細ラインリソグラフイ構造を作るための方法 |
JPS5621321A (en) * | 1979-07-27 | 1981-02-27 | Fujitsu Ltd | Automatically setting method of focus and exposure coefficient of electron beam exposure apparatus |
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US3118050A (en) * | 1960-04-06 | 1964-01-14 | Alloyd Electronics Corp | Electron beam devices and processes |
US3326176A (en) * | 1964-10-27 | 1967-06-20 | Nat Res Corp | Work-registration device including ionic beam probe |
US3491236A (en) * | 1967-09-28 | 1970-01-20 | Gen Electric | Electron beam fabrication of microelectronic circuit patterns |
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US3434894A (en) * | 1965-10-06 | 1969-03-25 | Ion Physics Corp | Fabricating solid state devices by ion implantation |
US3472997A (en) * | 1966-08-26 | 1969-10-14 | Us Navy | Secondary electron collection system |
US3519788A (en) * | 1967-01-13 | 1970-07-07 | Ibm | Automatic registration of an electron beam |
-
1931
- 1931-03-09 FR FR39852D patent/FR39852E/fr not_active Expired
-
1973
- 1973-03-28 GB GB1483473A patent/GB1416077A/en not_active Expired
- 1973-07-06 FR FR7321785A patent/FR2191263B1/fr not_active Expired
- 1973-07-23 DE DE2332091A patent/DE2332091C2/de not_active Expired
- 1973-12-28 US US429438A patent/US3876883A/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US3118050A (en) * | 1960-04-06 | 1964-01-14 | Alloyd Electronics Corp | Electron beam devices and processes |
US3326176A (en) * | 1964-10-27 | 1967-06-20 | Nat Res Corp | Work-registration device including ionic beam probe |
US3491236A (en) * | 1967-09-28 | 1970-01-20 | Gen Electric | Electron beam fabrication of microelectronic circuit patterns |
Cited By (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4051381A (en) * | 1974-12-13 | 1977-09-27 | Thomson-Csf | Device for the programmed tracing of designs by particle bombardment |
JPS5267263U (pt) * | 1975-11-13 | 1977-05-18 | ||
JPS5818213Y2 (ja) * | 1975-11-13 | 1983-04-13 | 日本ビクター株式会社 | デンシジユウ |
US4393312A (en) * | 1976-02-05 | 1983-07-12 | Bell Telephone Laboratories, Incorporated | Variable-spot scanning in an electron beam exposure system |
US4258265A (en) * | 1976-05-26 | 1981-03-24 | Tokyo Shibaura Electric Company, Limited | Electron beam exposing apparatus |
FR2357060A1 (fr) * | 1976-06-30 | 1978-01-27 | Ibm | Appareil de microfabrication par projection electronique |
US4097745A (en) * | 1976-10-13 | 1978-06-27 | General Electric Company | High resolution matrix lens electron optical system |
JPS5358770A (en) * | 1976-11-08 | 1978-05-26 | Jeol Ltd | Electron beam exposure apparatus |
JPS6038020B2 (ja) * | 1976-11-08 | 1985-08-29 | 日本電子株式会社 | 電子線露光装置 |
FR2376680A1 (fr) * | 1977-01-05 | 1978-08-04 | Svenska Flaektfabriken Ab | Dispositif pour fixer une cartouche de filtre dans un boitier |
US4164658A (en) * | 1977-01-20 | 1979-08-14 | Siemens Aktiengesellschaft | Charged-particle beam optical apparatus for imaging a mask on a specimen |
DE2702448A1 (de) * | 1977-01-20 | 1978-07-27 | Siemens Ag | Verfahren zur positionierung eines mit einer marke versehenen werkstueckes relativ zu einem abtastfeld bzw. zu einer maske |
US4140913A (en) * | 1977-01-20 | 1979-02-20 | Siemens Aktiengesellschaft | Charged-particle beam optical apparatus for the reduction imaging of a mask on a specimen |
US4151417A (en) * | 1977-03-31 | 1979-04-24 | Vlsi Technology Research Association | Electron beam exposure apparatus |
JPS53146575A (en) * | 1977-05-27 | 1978-12-20 | Nippon Telegr & Teleph Corp <Ntt> | Electron beam projection image forming device |
US4182958A (en) * | 1977-05-31 | 1980-01-08 | Rikagaku Kenkyusho | Method and apparatus for projecting a beam of electrically charged particles |
US4218621A (en) * | 1977-06-15 | 1980-08-19 | Vlsi Technology Research Association | Electron beam exposure apparatus |
US4167676A (en) * | 1978-02-21 | 1979-09-11 | Bell Telephone Laboratories, Incorporated | Variable-spot scanning in an electron beam exposure system |
WO1979000645A1 (en) * | 1978-02-21 | 1979-09-06 | Western Electric Co | Variable-spot scanning in an electron beam exposure system |
US4334156A (en) * | 1978-08-29 | 1982-06-08 | International Business Machines Corporation | Method of shadow printing exposure |
US4213053A (en) * | 1978-11-13 | 1980-07-15 | International Business Machines Corporation | Electron beam system with character projection capability |
US4264822A (en) * | 1978-11-27 | 1981-04-28 | Hitachi, Ltd. | Electron beam testing method and apparatus of mask |
US4370554A (en) * | 1979-09-27 | 1983-01-25 | International Business Machines Corporation | Alignment system for particle beam lithography |
US4603473A (en) * | 1982-10-13 | 1986-08-05 | Pioneer Electronic Corporation | Method of fabricating integrated semiconductor circuit |
EP0130497A3 (en) * | 1983-06-30 | 1985-03-13 | International Business Machines Corporation | Alignment technique for a scanning beam |
EP0130497A2 (en) * | 1983-06-30 | 1985-01-09 | International Business Machines Corporation | Alignment technique for a scanning beam |
US4546260A (en) * | 1983-06-30 | 1985-10-08 | International Business Machines Corporation | Alignment technique |
US4857742A (en) * | 1986-12-27 | 1989-08-15 | Canon Kabushiki Kaisha | Position detecting device using variable radiation |
US5130547A (en) * | 1989-11-30 | 1992-07-14 | Fujitsu Limited | Charged-particle beam exposure method and apparatus |
US5483073A (en) * | 1992-12-22 | 1996-01-09 | Carl-Zeiss-Stiftung | Method of illuminating an object with a focused electron beam and an electron-optical illuminating system therefor |
US5466904A (en) * | 1993-12-23 | 1995-11-14 | International Business Machines Corporation | Electron beam lithography system |
US6060711A (en) * | 1997-01-27 | 2000-05-09 | Nikon Corporation | Charged-particle optical systems and pattern transfer apparatus comprising same |
US6146910A (en) * | 1999-02-02 | 2000-11-14 | The United States Of America, As Represented By The Secretary Of Commerce | Target configuration and method for extraction of overlay vectors from targets having concealed features |
US6657211B2 (en) | 2000-07-14 | 2003-12-02 | Leo Elektronenmikroskopie | Process for electron beam lithography, and electron-optical lithography system |
WO2003005396A3 (en) * | 2001-01-26 | 2003-04-10 | Fei Co | Method and apparatus for scanned instrument calibration |
WO2003005396A2 (en) * | 2001-01-26 | 2003-01-16 | Fei Company | Method and apparatus for scanned instrument calibration |
US6770867B2 (en) | 2001-06-29 | 2004-08-03 | Fei Company | Method and apparatus for scanned instrument calibration |
US20040121069A1 (en) * | 2002-08-08 | 2004-06-24 | Ferranti David C. | Repairing defects on photomasks using a charged particle beam and topographical data from a scanning probe microscope |
US20080017845A1 (en) * | 2004-05-25 | 2008-01-24 | The Trustees Of The University Of Pennsylvania | Nanostructure Assemblies, Methods And Devices Thereof |
US8828792B2 (en) | 2004-05-25 | 2014-09-09 | The Trustees Of The University Of Pennsylvania | Nanostructure assemblies, methods and devices thereof |
US7332729B1 (en) * | 2004-06-18 | 2008-02-19 | Novelx, Inc. | System and method for multiple electron, ion, and photon beam alignment |
US7893697B2 (en) | 2006-02-21 | 2011-02-22 | Cyberoptics Semiconductor, Inc. | Capacitive distance sensing in semiconductor processing tools |
US8823933B2 (en) | 2006-09-29 | 2014-09-02 | Cyberoptics Corporation | Substrate-like particle sensor |
Also Published As
Publication number | Publication date |
---|---|
GB1416077A (en) | 1975-12-03 |
FR2191263A1 (pt) | 1974-02-01 |
DE2332091C2 (de) | 1982-04-01 |
DE2332091A1 (de) | 1974-01-03 |
FR2191263B1 (pt) | 1977-02-11 |
FR39852E (fr) | 1932-03-24 |
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