US3845305A - Microbeam probe apparatus - Google Patents

Microbeam probe apparatus Download PDF

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Publication number
US3845305A
US3845305A US00358970A US35897073A US3845305A US 3845305 A US3845305 A US 3845305A US 00358970 A US00358970 A US 00358970A US 35897073 A US35897073 A US 35897073A US 3845305 A US3845305 A US 3845305A
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Prior art keywords
electrode
primary beam
primary
electrodes
aperture
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Expired - Lifetime
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US00358970A
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English (en)
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H Liebl
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Max Planck Gesellschaft zur Foerderung der Wissenschaften
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Max Planck Gesellschaft zur Foerderung der Wissenschaften
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H01J37/228—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object whereby illumination or light collection take place in the same area of the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
    • H01J37/256—Tubes for spot-analysing by electron or ion beams; Microanalysers using scanning beams

Definitions

  • a common electrostatic lens of short focal length acts as an objective for the primary beam and also as a collecting le
  • the common lens [56] References Cited UNITED STATES PATENTS comprises two rotationally symmetrical lenses of short focal length in series with an apertured diaphragm between them.
  • the present invention relates to a microbeam probe, that is to say a device in which a desired portion (test field) of the surface of an object to be examined (test sample) is bombarded with an intensely concentrated beam of particles (electron beam or ion beam), and in which the secondary particles evaporated or otherwise released from the surface are delivered to an analyzing device, which consists in general of a mass spectrometer or the like.
  • a microbeam probe that is to say a device in which a desired portion (test field) of the surface of an object to be examined (test sample) is bombarded with an intensely concentrated beam of particles (electron beam or ion beam), and in which the secondary particles evaporated or otherwise released from the surface are delivered to an analyzing device, which consists in general of a mass spectrometer or the like.
  • a microbeam probe usually includes a particle source, which delivers a substantially parallel, or possibly slightly divergent beam of primary rays (the angle ofdivergence being, for example, smaller than and preferably smaller than about l), an objective with at least one microbeam optical lens for focussing the primary bundle of rays upon a small test field ofthe surface to be investigated, and an electrode arrange ment, whereby the secondary particles which are generated in the test field by the bundle of primary rays may reach the analyzing device.
  • a particle source which delivers a substantially parallel, or possibly slightly divergent beam of primary rays (the angle ofdivergence being, for example, smaller than and preferably smaller than about l)
  • an objective with at least one microbeam optical lens for focussing the primary bundle of rays upon a small test field ofthe surface to be investigated
  • an electrode arrange ment whereby the secondary particles which are generated in the test field by the bundle of primary rays may reach the analyzing device.
  • the secondary particles which are to be investigated are in general acceler ated away from the test field in a lateral direction (that is to say along a path which forms an angle to the axis of the primary beam) (see, for example, German Offenlegungschrift l,937,482).
  • the distance between the objective and the test sample, and therefore also the focal length of the objective must be relatively large in order to allow space for accommodating the electrode arrangement of the secondary beam optical system, accelerating the secondary particles away from the test field and making it possible for these to be completely detected (quantitatively).
  • the degree of reduction achievable by the objective is the greater, the shorter is the focal length, this reduction being in fact the ratio of the diameter of the primary particle source, or of the region of smallest cross section of the bundle of primary rays (crossover point, intermediate focus) and the diameter of the test sample impinged upon by the primary beam.
  • the present invention takes as its basic purpose the provision of a microbeam probe having an objective of substantially shorter focal length than that of the known microbeam probes without detracting from a comprehensive quantitative detection of the charged secondary particles and the transfer thereof into an analyzing device.
  • a microbeam probe of the above mentioned type in which the objective comprises two rotationally symmetrical electrostatic lenses of short focal length arranged in series and an intervening apertured diaphragm; these lenses as well as the surface to be investigated being so dimensioned and arranged with respect to the energy of the beam of primary particles that this beam is focussed onto the test field by the combined action of the electrical fields of the objective whilst tJi the diaphragm functions as an aperture diaphragm for the primary' beam.
  • the secondary particles generated in the test field are focussed in the aperture of the apertured diaphragm by the further lens constituted by the electrodes of the second lens of the objective and the conductive surface, and are also collimated by the first lens of the objective to form an at least substantially parallel beam of secondary particles, which latter beam leaves the objective in a direction which is substantially opposite to that of the bundle of primary rays, and between the primary beam source and the objective there is arranged a device for generating a deflecting field, which separates the primary beam from the secondary beam by virtue of the different acceleration voltages of the particles of these beams.
  • lens of short focal length preferably a lens whose focal length is of the same order of magnitude as the free diameter of the bored electrodes associated with the lens.
  • the secondary particles are accelerated opposite to the direction of the primary beam and are delivered to the analyzing device by the same electrodes which also form the objective for the primary beam. Because an intermediate focus or crossover region of the secondary ray beam lies in the plane of the diaphragm defining the aperture of the primary beam, a high intensity of the secondary beam is ensured.
  • the objective of the microbeam probe according to the present invention can have a focal length of 5 mm and less, whilst an objective focal length of less than 30 mm cannot be obtained with the known microbeam probes operating with secondary particle analysis. Having regard to the achievable reduction and the acceptable space angle, the microbeam probe according to the invention represents a substantial advance over the state of the art.
  • the microbeam probe is not restricted to a particular sign of the particles, but on the contrary, given suitable poling ofthe bias voltages, can operate with an electron beam as well as with a primary ion beam, and independently thereof can detect positive or negative secondary particles.
  • FIG. l is a somewhat simplified, partly cut away, side elevation of the electrode system ofa microbeam probe according to one practical example of the invention
  • FIG4 2 is a sectional elevation of the objective and a portion of an adjacent spherical condenser of the microbeam probe according to FIG. l on an enlarged scale as compared thereto;
  • FIG. 3 is a still further enlarged cross sectional elevation ofa part of the objective of the microbeam according to FIG. l and 2;
  • FIG. 4 is a sectional elevation of a part of the objective of the microbeam probe according to FIGS. l to 3, somewhat expanded in the horizontal direction as compared with FIG. 3, and with an indication of the path of the primary beam and the secondary beam.
  • the electrode system represented in FIG. l is in practice arranged in an evacuable vacuum vessel, which is accessible through a lock, through which there may be introduced an object having the surface to be investigated.
  • the electrode system contains a primary beam source l which is indicated only schematically, which can be designed in any known manner and which delivers a primary beam l2 of ions or electrons.
  • the primary beam has a region of minimum cross section determined by the primary ray source or a crossover region (intermediate focus) of the primary beam, which by means of a microbeam optical objective, shown only schematically at 14 in FIG. l, is imaged upon a surface I6 of a test object which is to be investigated.
  • test field bombarded by the primary beam l2 can be scanned in known manner by two sets I8 and 20 of electrostatic deflecting plates effecting a raster type deflection over the surface to be investigated (like the motion of the electron beam over the picture screen of a television tube).
  • the objective comprises three mutually insulated bored electrodes 22, 24 and 26, as may be seen particularly from FIG. 3.
  • the test surface I6 to be examined which should be electrically conductive or coated with a conducting layer, is arranged closely adjacent under the bore of the electrode 22 at the object side.
  • the electrode 26 is preferably placed at earth potential (U3 0)
  • the electrode 24 is placed at high voltage (for example U2 -20 kV)
  • the electrode 22 at a relatively low voltage (for example U, 50UV)
  • the test surface I6 is placed at the potential which should correspond to the exit energy of the secondary particles (for example U +I kV).
  • the fields 28 and 30 here schematically represented between on the one hand the electrodes 26 and 24, and on the other hand the electrodes 24 and 22, function as condenser lenses.
  • the result can be achieved that the primary' ray beam is focussed upon the test surface I6 by the combined action of these two lenses 24-26 and 22-24, as is represented in FIG. 4.
  • This condition can be achieved both for positive as well as for negative primary particles in the energy range between about and 25kV.
  • an apertured diaphragm 32 with a fine opening 34, which serves for defining the aperture of the primary beam l2.
  • the arrangement of the apertured diaphragm is most favourable at this position, because under the conditions of the raster type deflection of the primary beam the deviation of the beam path from the lens axis remains small in both lenses4
  • the conducting surface 16, the electrode 22 and the electrode 24 function as an electrostatic lens in the form of a triode system, whose field can be so adjusted by suitable choice of potential of the electrode 22 that the secondary beam emitted from the test field I6 is focussed in a crossover region, which lies in the plane, that is to say the aperture 34, of the diaphragm 32.
  • the magnitude of the aperture 34 determines the maximum possible exploration field of the test surface 16, that is to say the field under view. So long as one remains within this field of view, all of the secondary particles pass with adequate initial energies through the diaphragm 32.
  • the field between the electrodes 24 and 26 functions as a retarding immersion lens, whose lower focal plane coincides with the plane of the apertured diaphragm 32. Because the secondary beam has a crossover region at this position, the beam is formed by this lens into a parallel beam. By virtue of the raster type of deflection of the primary beam, there takes place a corresponding periodic angular deflection of this parallel beam.
  • a single insulator 44 which includes a flangelike portion, which mutually insulates the electrodes 22 and 26, and an annular portion with an inwardly projecting edge, in which the electrode 24 is seated in an insulated manner.
  • the effective portion of the electrode 22 has the shape of a comparatively thin plate (FIG. 3), whilst the electrode 24 is comparativelyl thick.
  • the bore of the electrode 24 has, at its object side, a cylindrical part 46 of smaller diameter and a contiguous portion 48 of larger diameter.
  • the electrode 26 has the shape of a tube. with a somewhat constricted end and contains the auxiliary deflecting plates 38, 42.
  • the objective may, as shown in FIG. 2, contain a light microscopic device of the black screen type for observing the surface I6 under test.
  • the observation device comprises, in a known manner, an annular concave mirror 48, a convex mirror 50, which includes a bore for the beam of particles, and a similarly bored deflecting mirror S2.
  • the path taken by the light beam 54 is shown in FIGS. 2 and 3.
  • the known observation devices of this type cannot however be directly employed in the presently described microbeam probe on account of the short focal length objective and the correspondingly small electrode spacing distances. Accordingly, in the presently described microbeam probe the light ray beam is deflected in the manner shown in FIG. 3 by means of two reflecting surfaces 56 and S8 which are either formed by the upper side of the electrode 22 and the under side of the electrode 24 respectively or are arranged upon said electrodes, so that the beam can pass from the concave mirror 48 through the aperture of the electrode 22.
  • the electrode 24 is provided with cavities 60 of ring sector shape for the light beam.
  • the separation of the primary beam 12 and the secondary beam 40 can be effected externally of the objective, for example, by means of a spherical condenser 62 (a condenser with plates in the form of portions of spherical surfaces), which deflects the secondary beam 40 emitted by the objective 14 out of the path ofthe primary beam l2, which condenser may, for example, be the constituent part of a double focussing mass spectrometer (see for example German Offenlegungschrift 2,031,8l l
  • the outer plate ofthe spherical condenser 62 has a bore 64 proceeding in the direction of the objective axis, through which the primary beam l2 enters.
  • the primary beam suffers only a slight deflection in passing along the short length of path through the spherical condenser 62, which deflection can be compensated by applying a suitable bias voltage to the pair of deflecting plates 20.
  • the lens fields 28 and 30 (FIG. 3) operate upon the primary beam like a composite objective, which in the practical example here represented has a focal length of about 5 mm,
  • the known types of microbeam probe, which work upon secondary particle analysis, have focal lengths of at least 30 mm.
  • the presently described microbeam probe represents a substantial technical advance as compared with the state of the art.
  • a microbeam probe apparatus comprising an ion or an electron particle source (l0) for producing an essentially collimated primary beam (12) of charged particles having a relatively high energy
  • a charged particle objective system including first and second sets of electrodes (26, 24-24, 22) to produce first and second electrostatic lens fields of short focal lengths in first and second areas of space respectively, said fields being positioned to be transversed by the path of said primary beam 12 in the order named ⁇ a diaphragm (32) having a fine aperture (34) positioned between said first and second areas of space,
  • a conductive surface (16) comprising a sample area to be investigated positioned in spaced relationship near said second set of electrodes on the side thereof, remote from said first set,
  • said first set of electrodes comprises first and second apertured electrodes (26, 24) transversed by the path of the primary beam (12) in the order named', said second set of electrodes comprises said second electrode (24) and a third apertured electrode (22) transversed by the path of said primary beam l2 in the order named; said second electrode having a substantial thickness in the direction of said beam path to form a substantially field-free space within its aperture; said aperture diaphragm (32) being positioned within said field-free space.
  • said first electrode (26) is of annular shape; said second electrode (24) has the form ofa relatively thick plate which has a bore having a portion of large diameter facing said first electrode, and a contiguous annular portion of smaller diameter, and said third electrode (22) has the shape of an apertured relatively thin plate.
  • Apparatus according to claim 1 further including first deflecting means positioned to deflect the primary beam across said sample surface, and second, auxiliary deflecting means positioned near said objective system between said objective system and said first deflecting means to compensate for lateral shifts of said primary beam caused by said first deflecting means.
  • Apparatus according to claim l further comprising a light-optical system of the Schwarzschild type for observing said sample area of said surface; said lightoptical system comprising a first reflecting surface (56) on the side of the third electrode (22) facing said second electrode (24), and a second reflecting surface (58) on the side of said second electrode (24) facing said third electrode (22) to deflect a light beam extending from said sample area to an observer.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
US00358970A 1972-05-12 1973-05-10 Microbeam probe apparatus Expired - Lifetime US3845305A (en)

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DE2223367A DE2223367C3 (de) 1972-05-12 1972-05-12 Mikrostrahlsonde zur quantitativen Erfassung von geladenen Sekundärteilchen

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JP (1) JPS5637503B2 (enrdf_load_html_response)
DE (1) DE2223367C3 (enrdf_load_html_response)
FR (1) FR2184713B1 (enrdf_load_html_response)
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Cited By (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4205226A (en) * 1978-09-01 1980-05-27 The Perkin-Elmer Corporation Auger electron spectroscopy
US4310759A (en) * 1979-12-14 1982-01-12 Hans Oechsner System for removal of material from the surface of a sample
US4426577A (en) 1980-02-15 1984-01-17 International Precision Incorporated Electron microscope of scanning type
US4491735A (en) * 1982-04-05 1985-01-01 The Perkin-Elmer Corporation Restricted ion source of high current density
US4551599A (en) * 1982-08-20 1985-11-05 Max-Planck-Gesellschaft Zur Furderung Der Wissenschaften E.V. Combined electrostatic objective and emission lens
US4556794A (en) * 1985-01-30 1985-12-03 Hughes Aircraft Company Secondary ion collection and transport system for ion microprobe
EP0105440A3 (de) * 1982-09-30 1986-07-02 Siemens Aktiengesellschaft Spektrometerobjektiv für die Korpuskularstrahl-Messtechnik
US4683376A (en) * 1984-09-18 1987-07-28 ICT Integrated Circuit Testing Gesellschaft, fuer Halbleiterpruftechnik mbH Opposing field spectrometer for electron beam mensuration technology
US4694170A (en) * 1984-12-28 1987-09-15 Office National D'etudes Et De Recherches Aerospatiales Instrument for very high resolution ionic micro-analysis of a solid sample
WO1987007762A1 (en) * 1986-06-04 1987-12-17 Lazarus, Steven Photo ion spectrometer
US4727250A (en) * 1984-02-18 1988-02-23 Leybold-Heraeus Gmbh Apparatus for measuring the angular distribution of charged particles scattered by a sample surface
US4733075A (en) * 1983-10-20 1988-03-22 Kabushiki Kaisha Toshiba Stroboscopic scanning electron microscope
WO1988006060A1 (en) * 1987-02-13 1988-08-25 Arch Development Corp. Photo ion spectrometer
WO1988009051A1 (en) * 1987-05-11 1988-11-17 Microbeam Inc. Integrated charge neutralization and imaging system
EP0105439B1 (de) * 1982-09-30 1989-05-03 Siemens Aktiengesellschaft Spektrometerobjektiv mit parallelen Objektiv- und Spektrometerfeldern für die Potentialmesstechnik
US4855596A (en) * 1986-06-04 1989-08-08 Arch Development Corp. Photo ion spectrometer
US4896036A (en) * 1987-02-02 1990-01-23 Siemens Aktiengesellschaft Detector objective for scanning microscopes
FR2644291A1 (fr) * 1989-02-10 1990-09-14 Max Planck Gesellschaft Microscope electronique pour l'examen de surfaces de corps solides
US4983830A (en) * 1989-06-29 1991-01-08 Seiko Instruments Inc. Focused ion beam apparatus having charged particle energy filter
US4983831A (en) * 1987-12-11 1991-01-08 Cameca Time-of-flight analysis method with continuous scanning and analyzer to implement this method
US5146089A (en) * 1990-01-10 1992-09-08 Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh Ion beam device and method for carrying out potential measurements by means of an ion beam
US5149974A (en) * 1990-10-29 1992-09-22 International Business Machines Corporation Gas delivery for ion beam deposition and etching
US5578821A (en) * 1992-05-27 1996-11-26 Kla Instruments Corporation Electron beam inspection system and method
US20030102436A1 (en) * 2000-03-20 2003-06-05 Gerard Benas-Sayag Column simultaneously focusing a particle beam and an optical beam
US20040108458A1 (en) * 2002-08-07 2004-06-10 Gerlach Robert L. Focused ion beam system with coaxial scanning electron microscope
US20050153454A1 (en) * 1992-05-29 2005-07-14 The Rockefeller University Method for detecting post-translational modification of peptides
US20070023655A1 (en) * 2005-06-29 2007-02-01 Kentaro Nishikata Sample measuring device
US20070045534A1 (en) * 2005-07-08 2007-03-01 Zani Michael J Apparatus and method for controlled particle beam manufacturing
US20070115468A1 (en) * 2005-10-28 2007-05-24 Barnard Bryan R Spectrometer for surface analysis and method therefor
US20090065694A1 (en) * 2004-08-11 2009-03-12 Noriaki Arai Scanning electron microscope
US7993813B2 (en) 2006-11-22 2011-08-09 Nexgen Semi Holding, Inc. Apparatus and method for conformal mask manufacturing
WO2011148073A1 (fr) * 2010-05-27 2011-12-01 Centre National De La Recherche Scientifique Systeme de detection de cathodoluminescence reglable et microscope mettant en oeuvre un tel systeme
US10566169B1 (en) 2008-06-30 2020-02-18 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
WO2020225453A2 (en) 2019-05-09 2020-11-12 Attolight AG Cathodoluminescence electron microscope
EP3783344A1 (en) 2019-08-20 2021-02-24 Attolight AG Accurate wavelength calibration in cathodoluminescence sem
US11335537B2 (en) 2008-06-30 2022-05-17 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
WO2022118294A1 (en) 2020-12-04 2022-06-09 Attolight AG Dislocation type and density discrimination in semiconductor materials using cathodoluminescence measurements
WO2022157647A1 (en) 2021-01-19 2022-07-28 Attolight AG COST EFFECTIVE PROBING IN HIGH VOLUME MANUFACTURE OF μLEDS
US11782001B2 (en) 2020-12-04 2023-10-10 Attolight AG Dislocation type and density discrimination in semiconductor materials using cathodoluminescence measurements

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FR2584234B1 (fr) * 1985-06-28 1988-12-09 Cameca Testeur de circuit integre a faisceau d'electrons
JPH08227689A (ja) * 1995-02-22 1996-09-03 Nec Corp 二次イオン質量分析装置

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US3374349A (en) * 1966-11-14 1968-03-19 Victor G. Macres Electron probe having a specific shortfocal length magnetic lens and light microscope
US3508049A (en) * 1967-02-27 1970-04-21 Max Planck Gesellschaft Corpuscular-ray microscope with an objective lens which also forms a condenser-lens field
US3614520A (en) * 1966-09-06 1971-10-19 Forgflo Corp Electron beam injector and focusing means suitable for electron microscope
US3629575A (en) * 1966-08-13 1971-12-21 Philips Corp Electron microscope having object limiting and contrast intensifying diaphragms

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US2356535A (en) * 1940-08-31 1944-08-22 Ruska Ernst Electronic lens
US2330930A (en) * 1941-04-30 1943-10-05 Rca Corp Scanning type of electron microscope
US2928943A (en) * 1957-09-11 1960-03-15 Leitz Ernst Gmbh Electronic microscope for top illumination of surfaces
US3253144A (en) * 1963-05-27 1966-05-24 Tektronix Inc Electron lens having means for correcting astigmatism
US3629575A (en) * 1966-08-13 1971-12-21 Philips Corp Electron microscope having object limiting and contrast intensifying diaphragms
US3614520A (en) * 1966-09-06 1971-10-19 Forgflo Corp Electron beam injector and focusing means suitable for electron microscope
US3374349A (en) * 1966-11-14 1968-03-19 Victor G. Macres Electron probe having a specific shortfocal length magnetic lens and light microscope
US3508049A (en) * 1967-02-27 1970-04-21 Max Planck Gesellschaft Corpuscular-ray microscope with an objective lens which also forms a condenser-lens field

Cited By (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4205226A (en) * 1978-09-01 1980-05-27 The Perkin-Elmer Corporation Auger electron spectroscopy
US4310759A (en) * 1979-12-14 1982-01-12 Hans Oechsner System for removal of material from the surface of a sample
US4426577A (en) 1980-02-15 1984-01-17 International Precision Incorporated Electron microscope of scanning type
US4491735A (en) * 1982-04-05 1985-01-01 The Perkin-Elmer Corporation Restricted ion source of high current density
US4551599A (en) * 1982-08-20 1985-11-05 Max-Planck-Gesellschaft Zur Furderung Der Wissenschaften E.V. Combined electrostatic objective and emission lens
EP0105440A3 (de) * 1982-09-30 1986-07-02 Siemens Aktiengesellschaft Spektrometerobjektiv für die Korpuskularstrahl-Messtechnik
EP0105439B1 (de) * 1982-09-30 1989-05-03 Siemens Aktiengesellschaft Spektrometerobjektiv mit parallelen Objektiv- und Spektrometerfeldern für die Potentialmesstechnik
US4733075A (en) * 1983-10-20 1988-03-22 Kabushiki Kaisha Toshiba Stroboscopic scanning electron microscope
US4727250A (en) * 1984-02-18 1988-02-23 Leybold-Heraeus Gmbh Apparatus for measuring the angular distribution of charged particles scattered by a sample surface
US4683376A (en) * 1984-09-18 1987-07-28 ICT Integrated Circuit Testing Gesellschaft, fuer Halbleiterpruftechnik mbH Opposing field spectrometer for electron beam mensuration technology
US4694170A (en) * 1984-12-28 1987-09-15 Office National D'etudes Et De Recherches Aerospatiales Instrument for very high resolution ionic micro-analysis of a solid sample
US4556794A (en) * 1985-01-30 1985-12-03 Hughes Aircraft Company Secondary ion collection and transport system for ion microprobe
JPH01502789A (ja) * 1986-06-04 1989-09-21 ユナイテッド　ステイツ　デパートメント　オブ　エナージィ 定量分光分析方法
US4855596A (en) * 1986-06-04 1989-08-08 Arch Development Corp. Photo ion spectrometer
WO1987007762A1 (en) * 1986-06-04 1987-12-17 Lazarus, Steven Photo ion spectrometer
US4973842A (en) * 1986-06-04 1990-11-27 Arch Development Corp. Lens system for a photo ion spectrometer
US4896036A (en) * 1987-02-02 1990-01-23 Siemens Aktiengesellschaft Detector objective for scanning microscopes
WO1988006060A1 (en) * 1987-02-13 1988-08-25 Arch Development Corp. Photo ion spectrometer
WO1988009051A1 (en) * 1987-05-11 1988-11-17 Microbeam Inc. Integrated charge neutralization and imaging system
US4818872A (en) * 1987-05-11 1989-04-04 Microbeam Inc. Integrated charge neutralization and imaging system
GB2211657A (en) * 1987-05-11 1989-07-05 Microbeam Inc Integrated charge neutralization and imaging system
GB2211657B (en) * 1987-05-11 1991-12-18 Microbeam Inc Integrated charge neutralization and imaging system
US4983831A (en) * 1987-12-11 1991-01-08 Cameca Time-of-flight analysis method with continuous scanning and analyzer to implement this method
FR2644291A1 (fr) * 1989-02-10 1990-09-14 Max Planck Gesellschaft Microscope electronique pour l'examen de surfaces de corps solides
US4978855A (en) * 1989-02-10 1990-12-18 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. Electron microscope for investigation of surfaces of solid bodies
US4983830A (en) * 1989-06-29 1991-01-08 Seiko Instruments Inc. Focused ion beam apparatus having charged particle energy filter
US5146089A (en) * 1990-01-10 1992-09-08 Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh Ion beam device and method for carrying out potential measurements by means of an ion beam
US5149974A (en) * 1990-10-29 1992-09-22 International Business Machines Corporation Gas delivery for ion beam deposition and etching
US5578821A (en) * 1992-05-27 1996-11-26 Kla Instruments Corporation Electron beam inspection system and method
US20050153454A1 (en) * 1992-05-29 2005-07-14 The Rockefeller University Method for detecting post-translational modification of peptides
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JPS4962184A (enrdf_load_html_response) 1974-06-17
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DE2223367C3 (de) 1978-11-30
DE2223367B2 (de) 1978-03-30

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