US3747559A - Apparatus for production of a closed tube of semiconductor material - Google Patents

Apparatus for production of a closed tube of semiconductor material Download PDF

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Publication number
US3747559A
US3747559A US00253629A US3747559DA US3747559A US 3747559 A US3747559 A US 3747559A US 00253629 A US00253629 A US 00253629A US 3747559D A US3747559D A US 3747559DA US 3747559 A US3747559 A US 3747559A
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United States
Prior art keywords
surface portions
rod
cap
rod member
cylindrical
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Expired - Lifetime
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US00253629A
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English (en)
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W Dietze
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Siemens AG
Siemens Corp
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Siemens Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching

Definitions

  • ABSTRACT An apparatus comprised of a housing member having an inner hollow chamber, a pair of electrically conductive mounting members electrically insulated from each other and positioned within the chamber, a carbon rod member mounted on one of the mounting members and a carbon tube member mounted on the other of the mounting members concentrically about the rod member, a carbon cap member joining the rod and tube members at their upper surfaces to provide a substantially continuous smooth exterior surface for formation of a tube thereon, means for feeding a gaseous material which includes a semiconductor material into the chamber, means for withdrawing a residual gas from the chamber and means for supplying energy to the mounting means so that the exterior surfaces of the tube member and cap member are uniformly heated and a desired tube closed at one end thereof forms about such heated carbon surfaces.
  • the invention relates to the production of tubes composed of semiconductor materials and more particularly to an apparatus for producing a tube open at only one end thereof having substantially uniform wall thicknesses and composed of a semiconductor material.
  • Prior Art Apparatus for the production of a tube open at only one end thereof and composed of a semiconductor material is known, for example, see Gennan Offenlegungsschrift 1,805,970.
  • the prior art apparatus includes a heated tube carrier member comprised of an outer cylindrical member and an inner metallic rod member.
  • the rod member is composed of iron and during operation, heat is not uniformly transferred to the exterior surface of the cylindrical member.
  • the temperature at the upper closed end of the cylindrical member is much lower than other portions thereof. Accordingly, the deposition of semiconductor materials takes place much slower on the low temperature areas of the cylindrical member.
  • the uniformity of the wall thickness of the produced tubes of semiconductor material is adversely effected by the nonuniform heat distribution on the surfaces of the cylindrical member.
  • the invention provides an apparatus for producing a tube closed at one end thereof composed of a semiconductor material and having a substantially uniform wall thickness throughout the extent thereof.
  • the invention includes an apparatus having a tube carrier means comprised of an outer cylindrical carbon tube member and an inner carbon rod member joined together at their upper surfaces by a carbon cap member to provide electrical continuity between the tube and rod members and provide a smooth exterior surface for deposition of a desired closed tube of semiconductor material. Electricity supplied to the cylindrical tube and rod member cause uniform heating of all other surfaces of the tube carrier means so that a uniform deposition of semiconductor material takes place thereon.
  • the cylindrical tube, inner rod and cap members are composed of a carbon material selected from the group consisting of vitreous carbon, spectral carbon and pyrolytic graphite.
  • FIG. I is an elevated cross-sectional view of an apparatus embodiment of the invention.
  • FIG. 2 is a partial enlarged cross-section view of a portion of an apparatus constructed in accordance with the principles of the invention.
  • FIG. 3 is a view somewhat similar to that of FIG. 2 illustrating another embodiment of the invention.
  • the invention provides an apparatus for producing a closed tube of semiconductor material having a substantially uniform wall thickness over its entire surface.
  • the invention utilizes a tube carrier means that includes an inner rod composed of a material having a relatively high specific electrical resistance and a high heat conductivity so that the tube carrier means is uniformly heated over its entire surface for uniform deposition of a semiconductor material on its peripheral surface.
  • the inner rod member is composed of a carbon material selected from the group of vitreous carbon (a carbon produced from synthetic organic materials heated in the absence of air), spectral carbon (a highly purified carbon extracted from coal and carbonized at about 3000 C.) and pyrolytic graphite.
  • a carbon material selected from the group of vitreous carbon (a carbon produced from synthetic organic materials heated in the absence of air), spectral carbon (a highly purified carbon extracted from coal and carbonized at about 3000 C.) and pyrolytic graphite.
  • Such carbon materials are uniformly heated and, as opposed to metallic materials such as iron or copper, are not attacked by gaseous components of semiconductor materials at elevated temperatures.
  • the amount of heat transfer between the inner rod member and surrounding cylindrical member is readily regulated.
  • the rod member mates with a concentric recess in the upper end surface of the cylindrical member.
  • matching thread means are provided between adjoining surfaces of the rod and cylindrical members so that the amount of surface contact between such members is easily regulated by increasing or decreasing the amount of thread contact.
  • the rod member is provided with an upper cap portion having fitted or machined surfaces in press-fit contact with adjacent surfaces of the cylindrical member so that the amount of contact between such fitted surfaces and cylindrical member surface is easily regulated by regulating the amount of insertion of the cap portion within the cylindrical member.
  • the rod member may be formed having a suitable upper portion snugly fitting within the cylindrical member.
  • the cap member is provided! with threads along a dependent portion thereof for securing the same to a threaded recess within the upper end of a rod member and has side flange surfaces contacting the end surfaces of a cylindrical member.
  • the cap member is provided with a machined recess for receiving the upper end portion of the rod member therein and has machined side surfaces for snugly fitting within the inner walls of the cylindrical member.
  • the cap member provides a substantially smooth exterior surface along the upper portion of the cylindrical member. A desired semiconductor material is deposited, as from a gaseous compound thereof, onto the exterior surface of the tube carrier means until a desired wall thickness is attained and is then readily removed from the carrier member.
  • a hollow cylindrical member having a closed upper end is provided with a centralized bore through its upper end and an upper end of a rod member is concentrically mounted within the cylindrical member and snugly mated with the bore so that there is electrical and mechanical contact between the rod and cylindrical member.
  • the upper end of the rod member is provided with a centralized bore and a cap member is suitably secured thereto.
  • the cap member is preferably mushroomed-shaped and has a stem portion that mates with the bore in the rod member and a cap portion of an outer diameter is substantially equal to the outer diameter of the cylindrical member.
  • the stem portion and bore walls may be provided with matching threads for interlocking the cap member onto the rod member or the stem portion may be provided with machined surfaces for press-fit securement within the rod.
  • the cap member provides a smooth end surface for the deposition of semiconductor materials thereon.
  • a hollow cylindrical member is properly positioned in an operational environment and a solid rod member concentrically mounted thereon out of contact with the cylindrical member.
  • a suitably shapedcap member is secured onto the rod member and onto the cylindrical member to provide electrical contact therebetween.
  • the cap member is preferably provided with a centralized recess having machined side walls for snugly fitting onto the upper end of the rod member and with machined outer side surfaces for snugly fitting within the upper end of the cylindrical member.
  • the cap member is selectively movable in its operational position for varying the amount of surface contact between the components of the tube carrier means, i.e. the rod member, the cylindrical member and the cap member.
  • FIG. 1 illustrates an exemplary embodiment of an apparatus suited for the practice of the invention.
  • a housing member 1 having a relatively large hollow inner chamber la is sealed from ambient environment by a bottom plate member 2.
  • the chamber 1a within housing member 1 is substantially gas-impervious.
  • Gas feed tubes 4 are provided through plate member 2 to allow the introduction of a suitable gaseous compound of a semiconductor material (i.e., SiHCl and a suitable reaction gas (i.e., H into the chamber.
  • gases 4 are surrounded by further tubes 5. Residual gases (i.e., HCl) are withdrawn from the chamber la by vacuum or the like via tubes 5.
  • a pair of electrical conduits 7, (such as silver electrodes) are provided through plate member 2 and sealed by sealing means 6, as of a fluoroplastic material such as tetrafluoroethylene.
  • the conduits 7 are operationally connected to a suitable source of electricity (not shown).
  • a pair of mounting block members 8 and 9 are positioned within the chamber la in an electrically insulated relation to each other and each in an electrically conductive relation with one of the pair of conduits 7.
  • the blocks 8 and 9 are composed of an electrically conductive material, such as graphite.
  • a tubular or cylindrical member 11 is mounted onto block member 8 and extends upwardly therefrom within the chamber la.
  • the tubular member 11 is hollow and includes at least a partial upper end surface.
  • Member 11 is preferably composed of a carbon material selected from the group of vitreous carbon, spectral carbon and pyrolytic graphite.
  • a rod member 10 is mounted onto block member 9 and concentrically within the cylindrical member 11.
  • the rod member 10 substantially extends throughout the entire length of cylindrical member 11 and is secured at its upper end to an adjacent end surface of member 11.
  • Rod member 11 is preferably composed of a carbon material selected from the group of vitreous carbon, spectral carbon and pyrolytic graphite.
  • the adjacent surfaces of the upper end of rod member 10 and upper end of cylindrical member 11 are provided with matching thread means 12.
  • the thread means 12 provide a mechanical and electrical connection between members l0 and 11.
  • a suitable voltage is supplied to electrical conduits 7 from a suitable source.
  • the conduits 7 conduct this energy via block members 8 and 9 to members 10 and 11 respectively, ,so as to heat the same.
  • the rod member 10 thus emits heat upwardly, by conductivity and radially by radiation so that particularly the upper surfaces of cylindrical member 11 are heated to a temperature approximately equal to the temperature of its remaining surfaces.
  • the beneficial effects of rod member 10 are further improved by interlocking thread means 12 at the upper ends of members l0 and 11.
  • the contact resistance between members l0 and 11 increases with increased thread contact so that electrical energy is transformed into heat at the contact area in proportion to the increased resistance in accordance with the Ohm law.
  • the temperature profile over the length of member 11 is thus readily controlled by increasing or decreasing the thread contact between the upper ends of members 10 and 11. Any desired surface contact adjustment is effected before tube producing operations are begun and before the semiconductor material is deposited.
  • a cap member 13 is mounted onto the member 11 so that a completely planar peripheral surface is provided for the semiconductor material being deposited thereon.
  • a thread means 14 for interlocking the cap member 13 to member 10 and to member 11.
  • member 10 is provided with a recess on its upper end surface having threads along the side surfaces thereof.
  • Cap member 13 is provided with a stem portion having matching threads on the side surfaces thereof for interlocking with the threads in the recess of rod member 10.
  • the cap member 13 also has radially extending side flange surfaces which overlie the end surfaces of member 11 so that when the cap member is securely threaded onto the rod member 10 the entire assemblage of member 10, member 11 and member 13 forms a unitary tube carrier means.
  • silico-chloroform SiHCl is utilized as a gaseous semiconductor component and hydrogen (H is utilized as a reaction gas.
  • the gaseous mixture is fed into the chamber 1a via tubes 4 and the outer surface of the tube carrier means is heated to a temperature in the range of about 11,000 to l2,500 C. and preferably 1 1,500 C. so that deposition of, for example, silicon, onto the heated surface occurs.
  • FIG. 2 illustrates the upper portion of a tube carrier means comprised of an outer hollow cylindrical member 11, an inner rod member 10 and a cap member 13. Thread means 12 and 14 are provided respectively between the adjacent side surfaces of members 10 and 11 and between adjacent surfaces of members 10 and 13.
  • the contact resistance is regulated by controlling the thread contact between such members.
  • FIG. 3 illustrates a similar upper portion of another embodiment of a tube carrier means comprised of a hollow cylindrical member 11, a concentrically mounted rod member and a cap member 16.
  • the cap member 16 is provided with machined or fitted surfaces 17 dimensioned so as to press-fit into the open end of member 11.
  • cap member 16 is provided with a down-facing recess with machined side surfaces 18 for a press-fit onto the end of rod member 10.
  • the contact resistance is readily adjusted by regulating the amount of contact between the pres-fit surfaces.
  • the means for limiting the amount of contact between members 10 and 11 are selected as desired.
  • the embodiment illustrated at FIG. 2 can be modified to use machined surfaces between thevarious components of the tube carrier means and the embodiment shown at FIG. 3 can be modified to use thread means between the various components of the tube carrier means.
  • the invention encompasses embodiments utilizing tube carrier means having both machined surfaces and thread means for regulating the amount of contact between the respective members thereof.
  • An apparatus for producing tubes closed at one end thereof and composed of a semiconductor material comprising;
  • housing member having tively large inner chamber
  • an electrically conductive closed and "tube carrier means having a substantially smooth continuous outer surface mounted within said inner chamber and in working relation on said mounting members; said tube carrier means including a hollow cylindrical member mounted on one of said pair of mounting members and a rod member mounted on the other of said pair of mounting members and concentrically within said hollow cylindrical member and connected to said closed end; means for feeding and withdrawing a gaseous material to and from said inner chamber; and means for supplying electrical energy to said cylindria rela- 6 cal member and rod member vla said pair of mounting members for substantially uniform heat ing of the outer surface of said tube carrier means.
  • cylindrical member includes a centralized recess at an outer upper end surface portion thereof, said recess defining cylindrical inner side surface portions; and the rod member includes an outer upper end surface portion in snug contact with said cylindrical inner side surface portions.
  • the closed end includes a cap member securely mounted onto the outer upper end surface portion of the rod member and in snug contact with cylindrical inner side surface portions of the cylinder member, said cap and rod members being relatively movable for varying the surface contact between said cylindrical member, rod member and cap member.
  • the closed end includes a cap member having a stem portion with outer stem side surface portions and the rod member includes a centralized recess at the outer upper end surface portions thereof, said recess defining rod recess inner side surface portions, said outer stem side surface portions being in snug contact with said rod recess inner side surface portions.
  • cap member includes a centralized recess at an outer lower surface portion thereof, said recess defining cap recess inner side surface portions, said cap member including outer side surface portions, said cap recess inner side surface portions being in snug contact with the outer upper end surface portions of the rod member and said outer side sur-face portions of the cap member being in snug contact withthe cylindricalinner side surfaces of the cylindrical member.
  • cap recess inner side surface portions, the outer upperend surface portions of the rod member, the outer side surface portions of the cap member and the cylindrical inner side surfaces of the cylindrical member are providedwith matching machined surfaces for press-fit securement of said members to one another;
  • An apparatus for producing tubes closed at one end thereof and composed of a semicomductor material comprising;
  • a gas-impermeable housing means having-a relatively large inert chamber
  • a tube carrier means having a substantially smooth continuous outer surface mounted in working relation on said mounting members; said tube carrier means comprising: a hollow cylindrical member mounted on one of said pair of mounting members, a rod member mounted on the other of said pair of mounting members and concentrically within said hollow cylindrical member out of contact therewith, and a cap member mechanically and electrically interlocking the rod member with the cylindrical member, said cap member being relatively movable for uniformly heat the outer surface thereof.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
US00253629A 1971-05-19 1972-05-15 Apparatus for production of a closed tube of semiconductor material Expired - Lifetime US3747559A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2125085A DE2125085C3 (de) 1971-05-19 1971-05-19 Vorrichtung zum Herstellen von einseitig geschlossenen Rohren aus Halbleitermaterial

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US3747559A true US3747559A (en) 1973-07-24

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US (1) US3747559A (enrdf_load_html_response)
JP (1) JPS5540528B1 (enrdf_load_html_response)
AT (1) AT336682B (enrdf_load_html_response)
BE (1) BE778749A (enrdf_load_html_response)
CA (1) CA968673A (enrdf_load_html_response)
CH (1) CH537214A (enrdf_load_html_response)
CS (1) CS167349B2 (enrdf_load_html_response)
DD (1) DD96853A5 (enrdf_load_html_response)
DE (1) DE2125085C3 (enrdf_load_html_response)
DK (1) DK137550C (enrdf_load_html_response)
FR (1) FR2138099B1 (enrdf_load_html_response)
GB (1) GB1340464A (enrdf_load_html_response)
IT (1) IT955601B (enrdf_load_html_response)
NL (1) NL7202997A (enrdf_load_html_response)
PL (1) PL82569B1 (enrdf_load_html_response)
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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3962391A (en) * 1973-05-07 1976-06-08 Siemens Aktiengesellschaft Disc support structure and method of producing the same
US3979490A (en) * 1970-12-09 1976-09-07 Siemens Aktiengesellschaft Method for the manufacture of tubular bodies of semiconductor material
US4015922A (en) * 1970-12-09 1977-04-05 Siemens Aktiengesellschaft Apparatus for the manufacture of tubular bodies of semiconductor material
US4035460A (en) * 1972-05-16 1977-07-12 Siemens Aktiengesellschaft Shaped bodies and production of semiconductor material
US4034705A (en) * 1972-05-16 1977-07-12 Siemens Aktiengesellschaft Shaped bodies and production of semiconductor material
US5091207A (en) * 1989-07-20 1992-02-25 Fujitsu Limited Process and apparatus for chemical vapor deposition
US6315877B1 (en) * 1997-09-02 2001-11-13 Fraunhofer-Gesellschaft Zur Foerdering Der Angewandten Forschung E.V. Device for applying layers of hard material by dusting
US6711191B1 (en) 1999-03-04 2004-03-23 Nichia Corporation Nitride semiconductor laser device
US6835956B1 (en) 1999-02-09 2004-12-28 Nichia Corporation Nitride semiconductor device and manufacturing method thereof
US7365369B2 (en) 1997-06-11 2008-04-29 Nichia Corporation Nitride semiconductor device
US7977687B2 (en) 2008-05-09 2011-07-12 National Chiao Tung University Light emitter device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111734950A (zh) * 2020-07-01 2020-10-02 西安维国电子科技有限公司 密闭空间电绝缘气体填充与回收的方法及填充装置

Citations (3)

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Publication number Priority date Publication date Assignee Title
US2955566A (en) * 1957-04-16 1960-10-11 Chilean Nitrate Sales Corp Dissociation-deposition unit for the production of chromium
US3139363A (en) * 1960-01-04 1964-06-30 Texas Instruments Inc Method of making a silicon article by use of a removable core of tantalum
US3451772A (en) * 1967-06-14 1969-06-24 Air Reduction Production of ultrapure titanium nitride refractory articles

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3547530A (en) * 1968-11-12 1970-12-15 Bell Telephone Labor Inc Overhead projector

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2955566A (en) * 1957-04-16 1960-10-11 Chilean Nitrate Sales Corp Dissociation-deposition unit for the production of chromium
US3139363A (en) * 1960-01-04 1964-06-30 Texas Instruments Inc Method of making a silicon article by use of a removable core of tantalum
US3451772A (en) * 1967-06-14 1969-06-24 Air Reduction Production of ultrapure titanium nitride refractory articles

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979490A (en) * 1970-12-09 1976-09-07 Siemens Aktiengesellschaft Method for the manufacture of tubular bodies of semiconductor material
US4015922A (en) * 1970-12-09 1977-04-05 Siemens Aktiengesellschaft Apparatus for the manufacture of tubular bodies of semiconductor material
US4035460A (en) * 1972-05-16 1977-07-12 Siemens Aktiengesellschaft Shaped bodies and production of semiconductor material
US4034705A (en) * 1972-05-16 1977-07-12 Siemens Aktiengesellschaft Shaped bodies and production of semiconductor material
US3962391A (en) * 1973-05-07 1976-06-08 Siemens Aktiengesellschaft Disc support structure and method of producing the same
US5091207A (en) * 1989-07-20 1992-02-25 Fujitsu Limited Process and apparatus for chemical vapor deposition
US7365369B2 (en) 1997-06-11 2008-04-29 Nichia Corporation Nitride semiconductor device
US8592841B2 (en) 1997-07-25 2013-11-26 Nichia Corporation Nitride semiconductor device
US6315877B1 (en) * 1997-09-02 2001-11-13 Fraunhofer-Gesellschaft Zur Foerdering Der Angewandten Forschung E.V. Device for applying layers of hard material by dusting
US7083996B2 (en) 1999-02-09 2006-08-01 Nichia Corporation Nitride semiconductor device and manufacturing method thereof
US6835956B1 (en) 1999-02-09 2004-12-28 Nichia Corporation Nitride semiconductor device and manufacturing method thereof
US7015053B2 (en) 1999-03-04 2006-03-21 Nichia Corporation Nitride semiconductor laser device
US7496124B2 (en) 1999-03-04 2009-02-24 Nichia Corporation Nitride semiconductor laser device
US6711191B1 (en) 1999-03-04 2004-03-23 Nichia Corporation Nitride semiconductor laser device
US7977687B2 (en) 2008-05-09 2011-07-12 National Chiao Tung University Light emitter device

Also Published As

Publication number Publication date
FR2138099A1 (enrdf_load_html_response) 1972-12-29
PL82569B1 (enrdf_load_html_response) 1975-10-31
DE2125085A1 (de) 1972-12-07
DK137550C (da) 1978-09-04
DK137550B (da) 1978-03-20
ATA241272A (de) 1976-09-15
JPS5540528B1 (enrdf_load_html_response) 1980-10-18
DD96853A5 (enrdf_load_html_response) 1973-04-12
FR2138099B1 (enrdf_load_html_response) 1974-07-26
NL7202997A (enrdf_load_html_response) 1972-11-21
DE2125085B2 (de) 1978-06-29
SE367216B (enrdf_load_html_response) 1974-05-20
GB1340464A (en) 1973-12-12
DE2125085C3 (de) 1979-02-22
AT336682B (de) 1977-05-25
CA968673A (en) 1975-06-03
CS167349B2 (enrdf_load_html_response) 1976-04-29
BE778749A (fr) 1972-05-16
CH537214A (de) 1973-05-31
IT955601B (it) 1973-09-29

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