DD96853A5 - - Google Patents

Info

Publication number
DD96853A5
DD96853A5 DD163029A DD16302972A DD96853A5 DD 96853 A5 DD96853 A5 DD 96853A5 DD 163029 A DD163029 A DD 163029A DD 16302972 A DD16302972 A DD 16302972A DD 96853 A5 DD96853 A5 DD 96853A5
Authority
DD
German Democratic Republic
Application number
DD163029A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of DD96853A5 publication Critical patent/DD96853A5/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
DD163029A 1971-05-19 1972-05-17 DD96853A5 (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2125085A DE2125085C3 (de) 1971-05-19 1971-05-19 Vorrichtung zum Herstellen von einseitig geschlossenen Rohren aus Halbleitermaterial

Publications (1)

Publication Number Publication Date
DD96853A5 true DD96853A5 (xx) 1973-04-12

Family

ID=5808445

Family Applications (1)

Application Number Title Priority Date Filing Date
DD163029A DD96853A5 (xx) 1971-05-19 1972-05-17

Country Status (16)

Country Link
US (1) US3747559A (xx)
JP (1) JPS5540528B1 (xx)
AT (1) AT336682B (xx)
BE (1) BE778749A (xx)
CA (1) CA968673A (xx)
CH (1) CH537214A (xx)
CS (1) CS167349B2 (xx)
DD (1) DD96853A5 (xx)
DE (1) DE2125085C3 (xx)
DK (1) DK137550C (xx)
FR (1) FR2138099B1 (xx)
GB (1) GB1340464A (xx)
IT (1) IT955601B (xx)
NL (1) NL7202997A (xx)
PL (1) PL82569B1 (xx)
SE (1) SE367216B (xx)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979490A (en) * 1970-12-09 1976-09-07 Siemens Aktiengesellschaft Method for the manufacture of tubular bodies of semiconductor material
US4015922A (en) * 1970-12-09 1977-04-05 Siemens Aktiengesellschaft Apparatus for the manufacture of tubular bodies of semiconductor material
US4034705A (en) * 1972-05-16 1977-07-12 Siemens Aktiengesellschaft Shaped bodies and production of semiconductor material
US4035460A (en) * 1972-05-16 1977-07-12 Siemens Aktiengesellschaft Shaped bodies and production of semiconductor material
DE2322952C3 (de) * 1973-05-07 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von Horden für die Aufnahme von Kristallscheiben bei Diffusions- und Temperprozessen
JP2888253B2 (ja) * 1989-07-20 1999-05-10 富士通株式会社 化学気相成長法およびその実施のための装置
EP1014455B1 (en) 1997-07-25 2006-07-12 Nichia Corporation Nitride semiconductor device
DE19738234C1 (de) * 1997-09-02 1998-10-22 Fraunhofer Ges Forschung Einrichtung zum Aufstäuben von Hartstoffschichten
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
WO2000052796A1 (fr) 1999-03-04 2000-09-08 Nichia Corporation Element de laser semiconducteur au nitrure
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
CN111734950A (zh) * 2020-07-01 2020-10-02 西安维国电子科技有限公司 密闭空间电绝缘气体填充与回收的方法及填充装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2955566A (en) * 1957-04-16 1960-10-11 Chilean Nitrate Sales Corp Dissociation-deposition unit for the production of chromium
GB944009A (en) * 1960-01-04 1963-12-11 Texas Instruments Ltd Improvements in or relating to the deposition of silicon on a tantalum article
US3451772A (en) * 1967-06-14 1969-06-24 Air Reduction Production of ultrapure titanium nitride refractory articles
US3547530A (en) * 1968-11-12 1970-12-15 Bell Telephone Labor Inc Overhead projector

Also Published As

Publication number Publication date
JPS5540528B1 (xx) 1980-10-18
GB1340464A (en) 1973-12-12
CH537214A (de) 1973-05-31
ATA241272A (de) 1976-09-15
DK137550B (da) 1978-03-20
NL7202997A (xx) 1972-11-21
IT955601B (it) 1973-09-29
DE2125085C3 (de) 1979-02-22
FR2138099B1 (xx) 1974-07-26
AT336682B (de) 1977-05-25
CA968673A (en) 1975-06-03
US3747559A (en) 1973-07-24
PL82569B1 (xx) 1975-10-31
SE367216B (xx) 1974-05-20
DE2125085B2 (de) 1978-06-29
FR2138099A1 (xx) 1972-12-29
DK137550C (da) 1978-09-04
CS167349B2 (xx) 1976-04-29
BE778749A (fr) 1972-05-16
DE2125085A1 (de) 1972-12-07

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