KR850003817A - 반응환경에 직접 노출 가능한 안정 전도부재 - Google Patents

반응환경에 직접 노출 가능한 안정 전도부재 Download PDF

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Publication number
KR850003817A
KR850003817A KR1019840007242A KR840007242A KR850003817A KR 850003817 A KR850003817 A KR 850003817A KR 1019840007242 A KR1019840007242 A KR 1019840007242A KR 840007242 A KR840007242 A KR 840007242A KR 850003817 A KR850003817 A KR 850003817A
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South Korea
Prior art keywords
fuselage
heated
electrical
constitutes
energy
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KR1019840007242A
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English (en)
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몬로 올슨 도날드
Original Assignee
돈 엠. 잭슨 주니어
어드밴스드 세미콘덕터 메트리얼스 아메리카 인코포레이티드
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Application filed by 돈 엠. 잭슨 주니어, 어드밴스드 세미콘덕터 메트리얼스 아메리카 인코포레이티드 filed Critical 돈 엠. 잭슨 주니어
Publication of KR850003817A publication Critical patent/KR850003817A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/62—Heating elements specially adapted for furnaces

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Structural Engineering (AREA)
  • Ceramic Products (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Conductive Materials (AREA)

Abstract

내용 없음

Description

반응환경에 직접 노출 가능한 안정 전도부재
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 화학증기퇴적장치에 사용하기 위한 전도부재의 부분사시도.
제2도는 본 발명에 따른 저항가열형 반응실의 부분적이 단면도.

Claims (9)

  1. 반응환경에 노출되는 동안 R.F 에너지 또는 전기적 에너지에 직접연결하므로서 가열될 수 있는 전도장치에 있어서, 이 장치가 알파 탄화규소의 동체를 가지며, 이 동체는 동체의 공극율 을증가시키지 아니하고 동체의 전기적인 전도율을 통제하기 위한 소량의 균일분포전 도입자로 구성됨을 특징으로 하는 장치.
  2. 청구범위 1항에 있어서, 상기 전도입자가 흑연, 몰리브덴 및 텅스텐으로부터 선택되는 입자임을 특징으로 하는 장치.
  3. 청구범위 1항 또는 2항에 있어서, 상기 동체의 전기저항이 약 1Ω -cm이하임을 특징으로 하는 장치.
  4. 청구범위 1항에 있어서, 상기 동체가 R.F 에너지로 가열됨을 특징으로 하는 장치.
  5. 청구범위 1항에 있어서, 상기 동체가 전기에너지원의 직접연결로 가열됨을 특징으로 하는 장치.
  6. 청구범위 1항에 있어서, 상기 동체가 화학증기퇴적장치내에서 플라스마 방전이 이루어질 수 있는 판체를 구성함을 특징으로 하는 장치.
  7. 청구범위 1항에 있어서, 상기 동체가 화학증기퇴적과정에 이용되는 R.F 가열형 서셉터를 구성함을 특징으로 하는 장치.
  8. 청구범위 1항에 있어서 상기 동체가 기체불투과성의 저항가열형 처리실을 구성함을 특징으로 하는 장치.
  9. 청구범위 1항의 전도성 동체를 제조하기 위한 방법에 있어서, 상기 동체의 전기저항을 줄이기 위하여 알파 탄화규소에 소량의 전기적인 전도성 물질을 균일하게 분산함을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019840007242A 1983-11-23 1984-11-19 반응환경에 직접 노출 가능한 안정 전도부재 KR850003817A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US554978 1983-11-23
US06/554,978 US4633051A (en) 1983-11-23 1983-11-23 Stable conductive elements for direct exposure to reactive environments

Publications (1)

Publication Number Publication Date
KR850003817A true KR850003817A (ko) 1985-06-26

Family

ID=24215490

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840007242A KR850003817A (ko) 1983-11-23 1984-11-19 반응환경에 직접 노출 가능한 안정 전도부재

Country Status (7)

Country Link
US (1) US4633051A (ko)
JP (1) JPS60112671A (ko)
KR (1) KR850003817A (ko)
DE (1) DE3442849A1 (ko)
FR (1) FR2555351A1 (ko)
GB (1) GB2150126B (ko)
NL (1) NL8403313A (ko)

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JPS62205619A (ja) * 1986-03-06 1987-09-10 Dainippon Screen Mfg Co Ltd 半導体の加熱方法及びその方法に使用されるサセプタ
JPS63138224A (ja) * 1986-11-28 1988-06-10 Kyocera Corp 温度センサ
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US5119540A (en) * 1990-07-24 1992-06-09 Cree Research, Inc. Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product
US5459546A (en) * 1992-08-28 1995-10-17 Penn; Randy J. Method and apparatus for accurate alignment of semiconductor wafers in photo printers
US5356475A (en) * 1993-02-22 1994-10-18 Lsi Logic Corporation Ceramic spacer assembly for ASM PECVD boat
WO1996017691A1 (en) * 1994-12-06 1996-06-13 Union Oil Company Of California Wafer holding fixture
US6825051B2 (en) * 2002-05-17 2004-11-30 Asm America, Inc. Plasma etch resistant coating and process
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US6974781B2 (en) * 2003-10-20 2005-12-13 Asm International N.V. Reactor precoating for reduced stress and uniform CVD
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Also Published As

Publication number Publication date
FR2555351A1 (fr) 1985-05-24
JPS60112671A (ja) 1985-06-19
GB2150126A (en) 1985-06-26
NL8403313A (nl) 1985-06-17
DE3442849A1 (de) 1985-08-29
US4633051A (en) 1986-12-30
GB8417942D0 (en) 1984-08-15
GB2150126B (en) 1987-08-26

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